N-Channel Power MOSFET 60 V, 220 A, 3.0 Mw

NTB5860NL, NTP5860NL, NVB5860NL

N-Channel Power MOSFET 60 V, 220 A, 3.0 mW

Features http://onsemi.com • Low RDS(on) • High Current Capability V(BR)DSS RDS(on) MAX ID MAX • 100% Avalanche Tested 3.0 mW @ 10 V • 60 V 220 A These Devices are Pb−Free, Halogen Free and are RoHS Compliant 3.6 mW @ 4.5 V • NVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 D Qualified and PPAP Capable

° MAXIMUM RATINGS (TJ = 25 C Unless otherwise specified)

Parameter Symbol Value Unit G

Drain−to−Source Voltage VDSS 60 V $ Gate−to−Source Voltage − Continuous VGS 20 V S ° N−CHANNEL MOSFET Continuous Drain Steady TA = 25 C ID 220 A Current, Rq State JC ° TA = 100 C 156 4 ° Power Dissipation, Steady TA = 25 C PD 283 W RqJC State 4 m Pulsed Drain Current tp = 10 s IDM 660 A 1 2 Current Limited by Package IDMmax 130 A 3 Operating and Storage Temperature Range T , T −55 to °C J stg 2 +175 TO−220AB D PAK 1 CASE 221A CASE 418B Source Current (Body Diode) IS 130 A 2 STYLE 5 STYLE 2 3 Single Pulse Drain−to−Source Avalanche EAS 735 mJ Energy (L = 0.3 mH) MARKING DIAGRAMS & PIN ASSIGNMENTS ° Lead Temperature for Soldering TL 260 C 4 Purposes (1/8″ from Case for 10 Seconds) Drain 4 Drain THERMAL RESISTANCE RATINGS Parameter Symbol Max Unit NTB ° Junction−to−Case (Drain) Steady State RqJC 0.53 C/W NTP 5860NLG 5860NLG AYWW Junction−to−Ambient − Steady State (Note 1) RqJA 28 AYWW Stresses exceeding Maximum Ratings may damage the device. Maximum 2 Ratings are stress ratings only. Functional operation above the Recommended 1 3 1 3 Drain Operating Conditions is not implied. Extended exposure to stresses above the Gate Source Gate Source Recommended Operating Conditions may affect device reliability. 1. Surface mounted on FR4 board using 1 sq in pad size, 2 (Cu Area 1.127 sq in [2 oz] including traces). Drain G = Pb−Free Device A = Assembly Location Y = Year WW = Work Week

ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet.

° ELECTRICAL CHARACTERISTICS (TJ = 25 C Unless otherwise specified) Characteristics Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS m Drain−to−Source Breakdown Voltage V(BR)DSS VDS = 0 V, ID = 250 A 60 V ° Drain−to−Source Breakdown Voltage V(BR)DSS/TJ m 6.1 mV/ C Temperature Coefficient ID = 250 A ° m Zero Gate Voltage Drain Current IDSS VGS = 0 V TJ = 25 C 1.0 A VDS = 60 V ° VGS = 0 V TJ = 125 C 100 VDS = 60 V $ $ Gate−Source Leakage Current IGSS VDS = 0 V, VGS = 20 V 100 nA ON CHARACTERISTICS (Note 2) m Gate Threshold Voltage VGS(th) VGS = VDS, ID = 250 A 1.0 3.0 V ° Threshold Temperature Coefficient VGS(th)/TJ −7.7 mV/ C W Drain−to−Source On−Resistance RDS(on) VGS = 10 V, ID = 20 A 2.4 3.0 m

VGS = 4.5 V, ID = 20 A 2.8 3.6

Forward Transconductance gFS VDS = 15 V, ID = 30 A 47 S CHARGES, CAPACITANCES & GATE RESISTANCE

Input Capacitance Ciss 13216 pF Output Capacitance C VDS = 25 V, VGS = 0 V, 1127 oss f = 1 MHz Transfer Capacitance Crss 752

Total Gate Charge QG(TOT) 220 nC

Threshold Gate Charge QG(TH) 13 VGS = 10 V, VDS = 48 V, I = 40 A Gate−to−Source Charge QGS D 37

Gate−to−Drain Charge QGD 54

SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3)

Turn−On Delay Time td(on) 25 ns

Rise Time tr 58 VGS = 10 V, VDD = 48 V, I = 100 A, R = 2.5 W Turn−Off Delay Time td(off) D G 98

Fall Time tf 144 DRAIN−SOURCE DIODE CHARACTERISTICS ° Forward Diode Voltage VSD TJ = 25 C 0.76 1.1 Vdc VGS = 0 V I = 40 A ° S TJ = 125 C 0.60

Reverse Recovery Time trr 50 ns

Charge Time ta 25 VGS = 0 V, IS = 100 A, dI /dt = 20 A/ms Discharge Time tb S 25

Reverse Recovery Stored Charge QRR 71 nC 2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%. 3. Switching characteristics are independent of operating junction temperatures.

http://onsemi.com 2 NTB5860NL, NTP5860NL, NVB5860NL

TYPICAL CHARACTERISTICS

280 280 V = V = 4 V ° GS GS TJ = 25 C V ≥ 10 V 10 V DS 240 4.4 V 240 3.8 V 200 200 3.6 V 160 160

120 120 3.4 V ° TJ = 25 C , DRAIN CURRENT (A) 80 80 D I , DRAIN CURRENT (A)

3.2 V D I 40 40 ° TJ = 125 C ° TJ = −55 C 0 0 01234523 45

VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics ) ) W W 0.008 0.0035 ID = 20 A T = 25°C ° J TJ = 25 C 0.006 V = 4.5 V 0.0030 GS

0.004 SOURCE RESISTANCE ( SOURCE RESISTANCE ( SOURCE RESISTANCE − − VGS = 10 V 0.0025 TO TO − 0.002 − , DRAIN , DRAIN 0.000 0.0020

DS(on) 268104 DS(on) 10 30 50 7090 110 130 R R VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate Voltage Figure 4. On−Resistance vs. Drain Current

2.0 100000

ID = 20 A VGS = 0 V 1.8 VGS = 10 V ° 1.6 TJ = 150 C

1.4 10000 1.2

, LEAKAGE (nA) T = 125°C 1.0 J DSS I SOURCE RESISTANCE (NORMALIZED) SOURCE RESISTANCE − 0.8 TO − 0.6 1000 −50 −25 0 25 50 75 100 125150 175 10 20 30 40 50 60 , DRAIN ° TJ, JUNCTION TEMPERATURE ( C) VDS, DRAIN−TO−SOURCE VOLTAGE (V)

DS(on) Figure 5. On−Resistance Variation with Figure 6. Drain−to−Source Leakage Current R Temperature vs. Voltage

http://onsemi.com 3 NTB5860NL, NTP5860NL, NVB5860NL

TYPICAL CHARACTERISTICS

16000 10 C VGS = 0 V QT iss ° 14000 TJ = 25 C 8 12000

10000 6 8000 Qgs Qgd SOURCE VOLTAGE (V) SOURCE VOLTAGE 4 6000 − TO 4000 − C, CAPACITANCE (pF) C, CAPACITANCE 2 V = 48 V Coss DS 2000 ID = 40 A , GATE Crss T = 25°C 0 GS 0 J V 0 102030400 50 100 150 200 250

VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source vs. Total Charge

1000 180 VDD = 48 V VGS = 0 V 160 ° ID = 40 A TJ = 25 C VGS = 10 V 140 120

tf 100 100 td(off) 80 tr t, TIME (ns) 60

, SOURCE CURRENT (A) 40

t S

d(on) I 20

10 0 1 10 100 0.60 0.70 0.800.90 1.00 1.10 W RG, GATE RESISTANCE ( ) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation Figure 10. Diode Forward Voltage vs. Current vs. Gate Resistance

1000 1 ms 10 ms 100 ms 10 ms dc 100

VGS = 10 V SINGLE PULSE ° TC = 25 C

, DRAIN CURRENT (A) 1 D I RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 0.1 0.1 1 10 100

VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area

http://onsemi.com 4 NTB5860NL, NTP5860NL, NVB5860NL

TYPICAL CHARACTERISTICS

Duty Cycle = 0.5

0.2 0.1 0.1 0.05 0.02 0.01 0.01 C/W) EFFECTIVE TRANSIENT ° THERMAL RESISTANCE

( SINGLE PULSE

JC(t) 0.001 q

R 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 t, PULSE TIME (s) Figure 12. Thermal Response

ORDERING INFORMATION Device Package Shipping† NTP5860NLG TO−220AB 50 Units / Rail (Pb−Free)

NTB5860NLT4G D2PAK 800 / Tape & Reel (Pb−Free)

NVB5860NLT4G* D2PAK 800 / Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NVB Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable.

http://onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS

TO−220 CASE 221A−09 ISSUE AJ DATE 05 NOV 2019

SCALE 1:1

STYLE 1: STYLE 2: STYLE 3: STYLE 4: PIN 1. BASE PIN 1. BASE PIN 1. CATHODE PIN 1. MAIN TERMINAL 1 2. COLLECTOR 2. EMITTER 2. ANODE 2. MAIN TERMINAL 2 3. EMITTER 3. COLLECTOR 3. GATE 3. GATE 4. COLLECTOR 4. EMITTER 4. ANODE 4. MAIN TERMINAL 2

STYLE 5: STYLE 6: STYLE 7: STYLE 8: PIN 1. GATE PIN 1. ANODE PIN 1. CATHODE PIN 1. CATHODE 2. DRAIN 2. CATHODE 2. ANODE 2. ANODE 3. SOURCE 3. ANODE 3. CATHODE 3. EXTERNAL TRIP/DELAY 4. DRAIN 4. CATHODE 4. ANODE 4. ANODE

STYLE 9: STYLE 10: STYLE 11: STYLE 12: PIN 1. GATE PIN 1. GATE PIN 1. DRAIN PIN 1. MAIN TERMINAL 1 2. COLLECTOR 2. SOURCE 2. SOURCE 2. MAIN TERMINAL 2 3. EMITTER 3. DRAIN 3. GATE 3. GATE 4. COLLECTOR 4. SOURCE 4. SOURCE 4. NOT CONNECTED

Electronic versions are uncontrolled except when accessed directly from the Document Repository. DOCUMENT NUMBER: 98ASB42148B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. DESCRIPTION: TO−220 PAGE 1 OF 1

ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others.

D2PAK 3 CASE 418B−04 ISSUE L DATE 17 FEB 2015

SCALE 1:1 NOTES: C 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. E 2. CONTROLLING DIMENSION: INCH. V 3. 418B−01 THRU 418B−03 OBSOLETE, −B− NEW STANDARD 418B−04. W 4 INCHES MILLIMETERS DIM MIN MAX MIN MAX A 0.340 0.380 8.64 9.65 B 0.380 0.405 9.65 10.29 A C 0.160 0.190 4.06 4.83 S D 0.020 0.035 0.51 0.89 1 23 E 0.045 0.055 1.14 1.40 F 0.310 0.350 7.87 8.89 G 0.100 BSC 2.54 BSC −T− H 0.080 0.110 2.03 2.79 K J 0.018 0.025 0.46 0.64 SEATING W PLANE K 0.090 0.110 2.29 2.79 G J L 0.052 0.072 1.32 1.83 M 0.280 0.320 7.11 8.13 H N 0.197 REF 5.00 REF D 3 PL P 0.079 REF 2.00 REF R 0.039 REF 0.99 REF M M 0.13 (0.005) T B S 0.575 0.625 14.60 15.88 V 0.045 0.055 1.14 1.40

VARIABLE CONFIGURATION ZONE N P R U L L L

M M M

F F F

VIEW W−W VIEW W−W VIEW W−W 123

STYLE 1: STYLE 2: STYLE 3: STYLE 4: STYLE 5: STYLE 6: PIN 1. BASE PIN 1. GATE PIN 1. ANODE PIN 1. GATE PIN 1. CATHODE PIN 1. NO CONNECT 2. COLLECTOR 2. DRAIN 2. CATHODE 2. COLLECTOR 2. ANODE 2. CATHODE 3. EMITTER 3. SOURCE 3. ANODE 3. EMITTER 3. CATHODE 3. ANODE 4. COLLECTOR 4. DRAIN 4. CATHODE 4. COLLECTOR 4. ANODE 4. CATHODE

MARKING INFORMATION AND FOOTPRINT ON PAGE 2

Electronic versions are uncontrolled except when accessed directly from the Document Repository. DOCUMENT NUMBER: 98ASB42761B Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. DESCRIPTION: D2PAK 3 PAGE 1 OF 2

xx AYWW xxxxxxxxG xxxxxxxxx xxxxxxxxG AYWW AWLYWWG AKA

IC Standard Rectifier

xx = Specific Device Code A = Assembly Location WL = Wafer Lot Y = Year WW = Work Week G = Pb−Free Package AKA = Polarity Indicator

*This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present.

SOLDERING FOOTPRINT*

10.49

8.38

16.155

2X 3.504

2X 1.016 5.080 PITCH DIMENSIONS: MILLIMETERS

*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.

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