LT4351 MOSFET Diode-OR Controller FEATURES DESCRIPTION n Low Loss Replacement for ORing Diode in Multiple The LT®4351 creates a near ideal diode using external Sourced Power Supplies single or back-to-back N-channel MOSFETs. This ideal n External N-Channel MOSFETs for High Current diode function permits low loss ORing of multiple power Capability sources. Power sources can easily be ORed together to n Internal Boost Regulator Supply for MOSFET increase total system power and reliability with minimal Gate Drive effect on supply voltage or efficiency. Disparate power n Wide Input Range: 1.2V to 18V supplies can be efficiently ORed together. n Fast Switching MOSFET Gate Control The IC monitors the input supply with respect to the load n Input Under and Overvoltage Detection and turns on the MOSFET(s) when the input supply is n STATUS and FAULT Outputs for Monitoring higher. If the MOSFET’s R is sufficiently small, the n Internal MOSFET Gate Clamp DS(ON) LT4351 will regulate the voltage across the MOSFET(s) n Available in a 10-pin MSOP Package to 15mV. A STATUS pin indicates the MOSFET on-state. APPLICATIONS An internal boost regulator generates the MOSFET gate n Paralleled Power Supplies drive voltage. Low operating voltage allows for ORing of n Uninterrupted Supplies supplies as low as 1.2V. n High Availability Systems The LT4351 will disable power passage during undervolt- n N + 1 Redundant Power Supplies age or overvoltage conditions. These voltages are set by L, LT, LTC, LTM, Linear Technology, the Linear logo and Burst Mode are registered trademarks resistive dividers on the UV and OV pins. The undervoltage and PowerPath and ThinSOT are trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners. threshold has user programmable hysteresis. Overvoltage detection is filtered to reduce false triggering. The LT4351 is available in a 10-pin MSOP package. TYPICAL APPLICATION Dual 5V Redundant Supply Si4862DY Si4862DY POWER 5V 5V COMMON 5V POWER SUPPLY SUPPLY 1 10µF 10µF 2 1× 1× 4.7µH CLOAD LOAD 1µF 1µF 4.7µH VIN GATE OUT OUT GATE VIN MBR0530 MBR0530 VDD VDD MBR0530 LT4351 LT4351 MBR0530 SW STATUS STATUS SW 24.9k 24.9k 1% UV 1% UV FAULT FAULT 232Ω 232Ω 1% 1% OV GND GND OV 1.47k 1.47k 4351 TA01 1% 1% 4351fd 1 LT4351 ABSOLUTE MAXIMUM RATINGS PIN CONFIGURATION (Note 1) VIN Voltage ................................................ –0.3V to 19V TOP VIEW OUT Voltage ............................................. –0.3V to 19V GATE 1 10 OUT VDD 2 9 STATUS V Voltage .............................................. –0.3V to 30V VIN 3 8 FAULT DD SW 4 7 UV FAULT, STATUS Voltages .......................... –0.3V to 30V GND 5 6 OV FAULT, STATUS Current .......................................... 8mA MS PACKAGE 10-LEAD PLASTIC MSOP UV, OV Voltages ......................................... –0.3V to 9V TJMAX = 125°C, θJA = 120°C/W SW Voltage .............................................. –0.3V to 32V Operating Temperature Range LT4351C .................................................. 0°C to 70°C LT4351I ............................................... –40°C to 85°C Junction Temperature (Note 2) ............................ 125°C Storage Temperature Range .................. –65°C to 150°C Lead Temperature (Soldering, 10 sec) .................. 300°C ORDER INFORMATION LEAD FREE FINISH TAPE AND REEL PART MARKING PACKAGE DESCRIPTION TEMPERATURE RANGE LT4351CMS#PBF LT4351CMS#TRPBF LTZZ 10-Lead Plastic MSOP 0°C to 70°C LT4351IMS#PBF LT4351IMS#TRPBF LTA1 10-Lead Plastic MSOP –40°C to 85°C Consult LTC Marketing for parts specified with wider operating temperature ranges. Consult LTC Marketing for information on non-standard lead based finish parts. For more information on lead free part marking, go to: http://www.linear.com/leadfree/ For more information on tape and reel specifications, go to: http://www.linear.com/tapeandreel/ ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VIN = VOUT = 5V, VDD = 16.1V, VUV = 0.4V, VOV = 0.2V, GATE Open, unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS Supply and Protection l VIN Operating Range 1.2 18 V l IVIN VIN Supply Current VIN = 1.2V, VOUT = 1.1V, VDD = 12.3V 1.41 2 mA l VIN = 18V, VOUT = 17.9V, VDD = 29.1V 1.71 2.1 mA l VUV(TH) Undervoltage Turn-Off Voltage UV Falling 290 300 310 mV Threshold l IUV(HYST) IUV Hysteresis Difference Between IUV at VUV(TH) + 10mV and 7 10 13 µA VUV(TH) – 10mV l IUV UV Input Bias Current VUV = VUV(TH) + 10mV –100 –400 nA l VOV(TH) Overvoltage Threshold OV Rising 290 300 310 mV 4351fd 2 LT4351 ELECTRICAL CHARACTERISTICS The l denotes the specifications which apply over the full operating temperature range, otherwise specifications are at TA = 25°C. VIN = VOUT = 5V, VDD = 16.1V, VUV = 0.4V, VOV = 0.2V, GATE Open, unless otherwise specified. SYMBOL PARAMETER CONDITIONS MIN TYP MAX UNITS l IOV OV Input Bias Current VOV = VOV(TH) – 10mV –100 –400 V l VF(ON) FAULT Pin On-Voltage IF = 5mA in Fault Condition 0.14 0.25 V l IF(OFF) FAULT Pin Leakage Current VF = 30V, VIN = 4.9V 0.04 1 µA Boost Supply l VBR Boost Regulation Trip Voltage Measured as VDD to VIN, Rising Edge 10.2 10.7 11.4 V tOFF Boost Supply Off-Time 600 ns l ISWLIM Boost Supply Switch Current Limit 350 450 650 mA Gate Drive l VIOR Input-to-Output Regulated Voltage 4 15 25 mV l ∆VGL Gate Voltage Limit VIN = 5V, VOUT = 4.9V, VDD = 13V Measured with –2.3 –3 V Respect to VDD l ∆VG(MAX) Maximum Gate Voltage VIN = 5V, VOUT = 4.9V, VDD = 16.1V Measured with 7 7.4 7.8 V Respect to VOUT l VG(OFF) Gate Off-Voltage VOUT = 5.1V 0.16 0.30 V IGSO Gate Source Current VOUT = 4.9V, VGATE = 9V 0.670 A IGSK Gate Sink Current VOUT = 5.1V, VGATE = 9V 0.670 A l VDD Operating Range 30 V l IVDD VDD Supply Current VIN = 1.2V, VOUT = 1.1V, VDD = 12.3V, GATE Open 3 4 mA l VIN = 18V, VOUT = 17.9V, VDD = 29.1V, GATE Open 3.6 5.6 mA Status Functions l ∆VGIS Minimum Gate Voltage for Turning VOUT = 4.9V, ISTATUS = 1mA 0.75 1 V On Status VIOGF VIN to VOUT Fault Voltage with VOUT Falling, Measured with Respect to VIN 185 210 230 mV Open Gate l VST(ON) Status Pin On-Voltage IST = 5mA, VOUT = 4.9V, Status On 0.13 0.25 V l IST(OFF) Status Pin Leakage Current VST = 30V, Status Off, VIN = 4.9V 0.04 1 µA Note 1: Stresses beyond those listed under Absolute Maximum Ratings Note 2: TJ is calculated from the ambient temperature TA and power may cause permanent damage to the device. Exposure to any Absolute dissipation PD according to the following formula: Maximum Rating condition for extended periods may affect device TJ = TA + (PD • 120°C/W) reliability and lifetime. 4351fd 3 LT4351 TYPICAL PERFORMANCE CHARACTERISTICS TA = 25°C, unless otherwise noted. Undervoltage Threshold Overvoltage Threshold vs Temperature vs Temperature Undervoltage Threshold vs VIN 310 305 310 VIN = 1.2V VIN = 1.2V 308 VIN = 5V VIN = 5V 308 VIN = 12V 303 VIN = 12V 306 306 VIN = 20V VIN = 20V 304 304 301 302 302 (mV) (mV) (mV) 300 299 300 UV(TH) OV(TH) 298 UV(TH) 298 V V V 297 296 296 294 294 295 292 292 290 293 290 –50 –25 0 25 50 75 100 125 –50 –25 0 25 50 75 100 125 0 2 4 6 8 10 12 1416 18 20 TEMPERATURE (°C) TEMPERATURE (°C) VIN (V) 4351 G01 4351 G02 4351 G03 Overvoltage Hysteresis Overvoltage Turn-Off Delay Overvoltage Threshold vs VIN vs Temperature vs Overvoltage Overdrive 310 25 20 VIN = 5V VIN = 5V 308 18 306 20 16 304 14 302 15 12 (mV) 300 10 UV(TH) 298 10 8 V 6 296 OV HYSTERESIS (mV) TURN-OFF DELAY (µs) 294 5 4 292 2 290 0 0 0 2 4 6 8 10 12 1416 18 20 –50 –25 0 25 50 75 100 125 0 5 10 15 20 25 30 35 VIN (V) TEMPERATURE (°C) OV VOLTAGE ABOVE THRESHOLD (mV) 4351 G04 4351 G05 3451 G06 IVIN vs Temperature IVDD vs Temperature Gate Off-Voltage vs Temperature 2.0 4.5 0.50 VIN = 1.2V VIN = 1.2V 1.9 VIN = 5V VIN = 5V 0.45 VIN = 12V VIN = 12V 1.8 4.0 0.40 VIN = 5V VIN = 20V VIN = 20V VOUT = 5V 1.7 0.35 1.6 3.5 0.30 (V) (mA) (mA) 1.5 0.25 GOFF VIN VDD I V 1.4 I 3.0 0.20 VIN = 5V VOUT = 5.1V 1.3 0.15 1.2 2.5 0.10 1.1 0.05 1.0 2.0 0 –50 –25 0 25 50 75 100 125 –50 –25 0 25 50 75 100 125 –50 –25 0 25 50 75 100 125 TEMPERATURE (°C) TEMPERATURE (°C) TEMPERATURE (°C) 4351 G07 4351 G08 4351 G09 4351fd 4 LT4351 TYPICAL PERFORMANCE CHARACTERISTICS TA = 25°C, unless otherwise noted. GATE Pin Turn On and Off Waveform with 10nF Capacitor Load Typical SW Pin Waveform TURN ON VGATE VSW 2V/DIV 5V/DIV TURN OFF 4351 G10 4351 G11 50ns/DIV 500ns/DIV VIN = 5V VIN = 5V VOUT = 4.9V TO 5.1V SQUARE WAVE L = 4.7µH SW Pin Waveform at Maximum Typical SW Pin Waveform Boost Regulator Output VSW VSW 5V/DIV 5V/DIV 4351 G12 4351 G13 10µs/DIV 10µs/DIV VIN = 5V VIN = 5V 4.7µH INDUCTOR 4.7µH INDUCTOR 4351fd 5 LT4351 PIN FUNCTIONS GATE (Pin 1): MOSFET Gate Drive Pin.
Fundamentals of Microelectronics Chapter 3 Diode Circuits
9/17/2010 Fundamentals of Microelectronics CH1 Why Microelectronics? CH2 Basic Physics of Semiconductors CH3 Diode Circuits CH4 Physics of Bipolar Transistors CH5 Bipolar Amplifiers CH6 Physics of MOS Transistors CH7 CMOS Amplifiers CH8 Operational Amplifier As A Black Box 1 Chapter 3 Diode Circuits 3.1 Ideal Diode 3.2 PN Junction as a Diode 3.3 Applications of Diodes 2 1 9/17/2010 Diode Circuits After we have studied in detail the physics of a diode, it is time to study its behavior as a circuit element and its many applications. CH3 Diode Circuits 3 Diode’s Application: Cell Phone Charger An important application of diode is chargers. Diode acts as the black box (after transformer) that passes only the positive half of the stepped-down sinusoid. CH3 Diode Circuits 4 2 9/17/2010 Diode’s Action in The Black Box (Ideal Diode) The diode behaves as a short circuit during the positive half cycle (voltage across it tends to exceed zero), and an open circuit during the negative half cycle (voltage across it is less than zero). CH3 Diode Circuits 5 Ideal Diode In an ideal diode, if the voltage across it tends to exceed zero, current flows. It is analogous to a water pipe that allows water to flow in only one direction. CH3 Diode Circuits 6 3 9/17/2010 Diodes in Series Diodes cannot be connected in series randomly. For the circuits above, only a) can conduct current from A to C. CH3 Diode Circuits 7 IV Characteristics of an Ideal Diode V V R = 0⇒ I = = ∞ R = ∞⇒ I = = 0 R R If the voltage across anode and cathode is greater than zero, the resistance of an ideal diode is zero and current becomes infinite.
Vacuum Tube Theory, a Basics Tutorial – Page 1 Vacuum Tubes or Thermionic Valves come in many forms including the Diode, Triode, Tetrode, Pentode, Heptode and many more. These tubes have been manufactured by the millions in years gone by and even today the basic technology finds applications in today's electronics scene. It was the vacuum tube that first opened the way to what we know as electronics today, enabling first rectifiers and then active devices to be made and used. Although Vacuum Tube technology may appear to be dated in the highly semiconductor orientated electronics industry, many Vacuum Tubes are still used today in applications ranging from vintage wireless sets to high power radio transmitters. Until recently the most widely used thermionic device was the Cathode Ray Tube that was still manufactured by the million for use in television sets, computer monitors, oscilloscopes and a variety of other electronic equipment. Concept of thermionic emission Thermionic basics The simplest form of vacuum tube is the Diode. It is ideal to use this as the first building block for explanations of the technology. It consists of two electrodes - a Cathode and an Anode held within an evacuated glass bulb, connections being made to them through the glass envelope. If a Cathode is heated, it is found that electrons from the Cathode become increasingly active and as the temperature increases they can actually leave the Cathode and enter the surrounding space. When an electron leaves the Cathode it leaves behind a positive charge, equal but opposite to that of the electron. In fact there are many millions of electrons leaving the Cathode.
Diodes as Rectifiers As previously mentioned, diodes can be used to convert alternating current (AC) to direct current (DC). Shown below is a representative schematic of a simple DC power supply similar to a au- tomobile battery charger. The way in which the diode rectifier is used results in what is called a half-wave rectifier. 0V 35.6Vpp 167V 0V pp 17.1Vp 0V T1 D1 Wallplug 1N4001 negative half−wave is 110VAC R1 resistive load removed by diode D1 D1 120 to 12.6VAC − stepdown transformer + D2 D2 input from RL input from RL transformer transformer (positive half−cycle) Figure 1: Half-Wave Rectifier Schematic (negative half−cycle) − D3 + D3 The input transformer steps the input voltage down from 110VAC(rms) to 12.6VAC(rms). The D4 D4 diode converts the AC voltage to DC by removing theD1 and negative D3 goingD1 and D3 part of the input sine wave. The result is a pulsating DC output waveform which is not ideal except for17.1V simplep applications 0V such as battery chargers as the voltage goes to zero for oneD2 have and D4 of every cycle. What we would D1 D1 v_out like is a DC output that is more consistent;T1 a waveform more like a battery what we have here. T1 1 D2 D2 C1 Wallplug R1 Wallplug R1 We need a way to use the negative half-cycle of theresistive sine load wave to to fill in between the pulses 50uF 1K 110VAC 110VAC created by the positive half-waves. This would give us a more consistent output voltage.
2.996/6.971 Biomedical Devices Design Laboratory Lecture 3: Diodes and Transistors Instructor: Hong Ma Sept. 17, 2007 Diode Behavior • Forward bias – Exponential behavior • Reverse bias I – Breakdown – Controlled breakdown Æ Zeners VZ = Zener knee voltage Compressed -VZ scale 0V 0.7 V V ⎛⎞V Breakdown V IV()= I et − 1 S ⎜⎟ ⎝⎠ kT V = t Q Types of Diode • Silicon diode (0.7V turn-on) • Schottky diode (0.3V turn-on) • LED (Light-Emitting Diode) (0.7-5V) • Photodiode • Zener • Transient Voltage Suppressor Silicon Diode • 0.7V turn-on • Important specs: – Maximum forward current – Reverse leakage current – Reverse breakdown voltage • Typical parts: Part # IF, max IR VR, max Cost 1N914 200mA 25nA at 20V 100 ~$0.007 1N4001 1A 5µA at 50V 50V ~$0.02 Schottky Diode • Metal-semiconductor junction • ~0.3V turn-on • Often used in power applications • Fast switching – no reverse recovery time • Limitation: reverse leakage current is higher – New SiC Schottky diodes have lower reverse leakage Reverse Recovery Time Test Jig Reverse Recovery Test Results • Device tested: 2N4004 diode Light Emitting Diode (LED) • Turn-on voltage from 0.7V to 5V • ~5 years ago: blue and white LEDs • Recently: high power LEDs for lighting • Need to limit current LEDs in Parallel V R ⎛⎞ Vt IV()= IS ⎜⎟ e − 1 VS = 3.3V ⎜⎟ ⎝⎠ •IS is strongly dependent on temp. • Resistance decreases R R R with increasing V = 3.3V S temperature • “Power Hogging” Photodiode • Photons generate electron-hole pairs • Apply reverse bias voltage to increase sensitivity • Key specifications: – Sensitivity
CSE-Module- 3:LED PHYSICS CSE- Module-3: SEMICONDUCTOR LIGHT EMITTING DIODE :LED (5Lectures) Light Emitting Diodes (LEDs) Light Emitting Diodes (LEDs) are semiconductors p-n junction operating under proper forward biased conditions and are capable of emitting external spontaneous radiations in the visible range (370 nm to 770 nm) or the nearby ultraviolet and infrared regions of the electromagnetic spectrum General Structure LEDs are special diodes that emit light when connected in a circuit. They are frequently used as “pilot light” in electronic appliances in to indicate whether the circuit is closed or not. The structure and circuit symbol is shown in Fig.1. The two wires extending below the LED epoxy enclose or the “bulb” indicate how the LED should be connected into a circuit or not. The negative side of the LED is indicated in two ways (1) by the flat side of the bulb and (2) by the shorter of the two wires extending from the LED. The negative lead should be connected to the negative terminal of a battery. LEDs operate at relative low voltage between 1 and 4 volts, and draw current between 10 and 40 milliamperes. Voltages and Fig.-1 : Structure of LED current substantially above these values can melt a LED chip. The most important part of a light emitting diode (LED) is the semiconductor chip located in the centre of the bulb and is attached to the 1 CSE-Module- 3:LED top of the anvil. The chip has two regions separated by a junction. The p- region is dominated by positive electric charges, and the n-region is dominated by negative electric charges.
ECE 255, Diodes and Rectifiers 23 January 2018 In this lecture, we will discuss the use of Zener diode as voltage regulators, diode as rectifiers, and as clamping circuits. 1 Zener Diodes In the reverse biased operation, a Zener diode displays a voltage breakdown where the current rapidly increases within a small range of voltage change. This property can be used to limit the voltage within a small range for a large range of current. The symbol for a Zener diode is shown in Figure 1. Figure 1: The symbol for a Zener diode under reverse biased (Courtesy of Sedra and Smith). Figure 2 shows the i-v relation of a Zener diode near its operating point where the diode is in the breakdown regime. The beginning of the breakdown point is labeled by the current IZK also called the knee current. The oper- ating point can be approximated by an incremental resistance, or dynamic resistance described by the reciprocal of the slope of the point. Since the slope, dI proportional to dV , is large, the incremental resistance is small, generally on the order of a few ohms to a few tens of ohms. The spec sheet usually gives the voltage of the diode at a specified test current IZT . Printed on March 14, 2018 at 10 : 29: W.C. Chew and S.K. Gupta. 1 Figure 2: The i-v characteristic of a Zener diode at its operating point Q (Cour- tesy of Sedra and Smith). The diode can be fabricated to have breakdown voltage of a few volts to a few hundred volts.
6.012 - Microelectronic Devices and Circuits Lecture 10 - MOS Caps II; MOSFETs I - Outline G cS vGS + SiO2 – • Review - MOS Capacitor (= vGB) The "Delta-Depletion Approximation" n+ (n-MOS example) p-Si Flat-band voltage: VFB ≡ vGB such that φ(0) = φp-Si: VFB = φp-Si – φm Threshold voltage: VT ≡ vGB such B 1/2 * that φ(0) = – φp-Si: VT = VFB – 2φp-Si + [2εSi qNA|2φp-Si| ] /Cox * * Inversion layer sheet charge density: qN = – Cox [vGC – VT] • Charge stores - qG(vGB) from below VFB to above VT Gate Charge: qG(vGB) from below VFB to above VT Gate Capacitance: Cgb(VGB) Sub-threshold charge: qN(vGB) below VT • 3-Terminal MOS Capacitors - Bias between B and C Impact is on VT(vBC): |2φp-Si| → (|2φp-Si| - vBC) • MOS Field Effect Transistors - Basics of model Gradual Channel Model: electrostatics problem normal to channel drift problem in the plane of the channel Clif Fonstad, 10/15/09 Lecture 10 - Slide 1 G CS vGS + SiO2 – (= vGB) The n-MOS capacitor n+ Right: Basic device p-Si with vBC = 0 B Below: One-dimensional structure for depletion approximation analysis* vGB + – SiO 2 p-Si G B x -tox 0 * Note: We can't forget the n+ region is there; we Clif Fonstad, 10/15/09 will need electrons, and they will come from there. Lecture 10 - Slide 2 MOS Capacitors: Where do the electrons in the inversion layer come from? Diffusion from the p-type substrate? If we relied on diffusion of minority carrier electrons from the p-type substrate it would take a long time to build up the inversion layer charge.
Resistors, Diodes, Transistors, and the Semiconductor Value of a Resistor
Resistors, Diodes, Transistors, and the Semiconductor Value of a Resistor Most resistors look like the following: A Four-Band Resistor As you can see, there are four color-coded bands on the resistor. The value of the resistor is encoded into them. We will follow the procedure below to decode this value. • When determining the value of a resistor, orient it so the gold or silver band is on the right, as shown above. • You can now decode what resistance value the above resistor has by using the table on the following page. • We start on the left with the first band, which is BLUE in this case. So the first digit of the resistor value is 6 as indicated in the table. • Then we move to the next band to the right, which is GREEN in this case. So the second digit of the resistor value is 5 as indicated in the table. • The next band to the right, the third one, is RED. This is the multiplier of the resistor value, which is 100 as indicated in the table. • Finally, the last band on the right is the GOLD band. This is the tolerance of the resistor value, which is 5%. The fourth band always indicates the tolerance of the resistor. • We now put the first digit and the second digit next to each other to create a value. In this case, it’s 65. 6 next to 5 is 65. • Then we multiply that by the multiplier, which is 100. 65 x 100 = 6,500. • And the last band tells us that there is a 5% tolerance on the total of 6500.
HISTORY OF DIODE In electronics, a diode is a two-terminal electronic component that conducts electric current in only one direction. The term usually refers to a semiconductor diode, the most common type today, which is a crystal of semiconductor connected to two electrical terminals, a P-N junction. A vacuum tube diode, now little used, is a vacuum tube with two electrodes; a plate and a cathode. The most common function of a diode is to allow an electric current in one direction (called the diode's forward direction) while blocking current in the opposite direction (the reverse direction). Thus, the diode can be thought of as an electronic version of a check valve. This unidirectional behavior is called rectification, and is used to convert alternating current to direct current, and extract modulation from radio signals in radio receivers. However, diodes can have more complicated behavior than this simple on-off action, due to their complex non-linear electrical characteristics, which can be tailored by varying the construction of their P-N junction. These are exploited in special purpose diodes that perform many different functions. Diodes are used to regulate voltage (Zener diodes), electronically tune radio and TV receivers (varactor diodes), generate radio frequency oscillations (tunnel diodes), and produce light (light emitting diodes). Diodes were the first semiconductor electronic devices. The discovery of crystals' rectifying abilities was made by German physicist Ferdinand Braun in 1874. The first semiconductor diodes, called cat's whisker diodes were made of crystals of minerals such as galena. Today most diodes are made of silicon, but other semiconductors such as germanium are sometimes used.
Fundamentals of MOSFET and IGBT Gate Driver Circuits
Application Report SLUA618A–March 2017–Revised October 2018 Fundamentals of MOSFET and IGBT Gate Driver Circuits Laszlo Balogh ABSTRACT The main purpose of this application report is to demonstrate a systematic approach to design high performance gate drive circuits for high speed switching applications. It is an informative collection of topics offering a “one-stop-shopping” to solve the most common design challenges. Therefore, it should be of interest to power electronics engineers at all levels of experience. The most popular circuit solutions and their performance are analyzed, including the effect of parasitic components, transient and extreme operating conditions. The discussion builds from simple to more complex problems starting with an overview of MOSFET technology and switching operation. Design procedure for ground referenced and high side gate drive circuits, AC coupled and transformer isolated solutions are described in great details. A special section deals with the gate drive requirements of the MOSFETs in synchronous rectifier applications. For more information, see the Overview for MOSFET and IGBT Gate Drivers product page. Several, step-by-step numerical design examples complement the application report. This document is also available in Chinese: MOSFET 和 IGBT 栅极驱动器电路的基本原理 Contents 1 Introduction ................................................................................................................... 2 2 MOSFET Technology ......................................................................................................