MRF372R3, MRF372R5 470-860 Mhz, 180 W, 32 V Lateral N

Home , Printed circuit board

ARCHIVE INFORMATION © recl Semiconductor Freescale Data Device RF - CanlEhneet-oeLtrlMOSFET Lateral Enhancement--Mode N--Channel Transistor Field--Effect Power RF Data Technical Semiconductor Freescale • • • • • • Features • • • applications equipment. amplifier transmitter source volt common 32 large--signal, of for in performance ideal broadband it and gain make high device The this MHz. 860 to 470 from frequencies al .EDPoeto Characteristics Protection ESD 3. Table Characteristics Thermal 2. Table al .MxmmRatings Maximum 1. Table recl eiodco,Ic,20,2010. 2006, Inc., Semiconductor, Freescale ahn Model Machine Model Body Human Case to Junction Resistance, Thermal Temperature Junction Operating Temperature Operating Case Range Temperature Storage T @ Dissipation Device Total Continuous -- Current Drain Voltage Gate--Source Voltage Drain--Source eindfrbodadcmeca n nutilapiain with applications industrial and commercial broadband for Designed 5Sfi 0Uispr5 m 3ic Reel. Reel. inch inch 13 13 mm, mm, 56 56 per per Units Units 50 250 = = Suffix Suffix R5 R3 Reel. and Tape In Compliant RoHS Equival Series with Characterized Stability Thermal Excellent Protection ESD Use Integrated of Ease for Matched Internally Output CW Watts 90 MHz, 857 Vdc, 32 @ VSWR Power 3:1 Handling of Capable 2=83Mz 2Volts 32 MHz, MHz, 857 863 = = f1 f2 @ Performance Two--Tone Broadband Typical 2=83Mz 2Volts 32 MHz, MHz, 857 863 = = f1 f2 @ Performance Two--Tone Narrowband Typical eaeaoe25 above Derate M -1dBc --31 — IMD 37% — dB Efficiency 14.5 — PEP Gain Watts Power 180 — Power Output M -5dBc --35 — IMD 36% — dB Efficiency 17 — Gain PEP Watts Power 180 — Power Output ° C C =25 etConditions Test Characteristic ° C Rating A n ag-Sga meac Parameters Impedance Large--Signal ent lrgt reserved. rights ll Symbol Symbol V R V T P T T DSS I θ stg GS D C D JC J 7-80Mz 8 ,3 V 32 W, 180 MHz, 470--860 AEA N--CHANNEL LATERAL ouetNme:MRF372 Number: Document AE35-0,SYE1 STYLE 375G--04, CASE FPWRMOSFET POWER RF 3(Minimum) M3 (Minimum) 1 MRF372R5 MRF372R3 -5t +150 to --65 -.,+15 --0.5, +68 --0.5, Class Value Value 200 150 350 0.5 2.0 NI--860C3 17 R323MRF372R5 MRF372R3 e.9 5/2006 9, Rev. ° W/ Unit Unit Adc Vdc Vdc C/W ° ° ° W C C C ° C 1 ARCHIVE INFORMATION ARCHIVE INFORMATION 2 R323MRF372R5 MRF372R3 al .Eetia Characteristics Electrical 4. Table yia hrceitc,BodadOperation Broadband Characteristics, Typical Operation Narrowband Characteristics, Functional Characteristics Dynamic Characteristics On Characteristics Off .Maueetmd ihdvc i device with made separately. Measurement measured device 2. of side Each 1. aeTrsodVoltage Threshold Gate omnSuc oe Gain Power Source Common omnSuc oe Gain Power Source Common ri-Suc On--Voltage Drain--Source Voltage Quiescent Gate Current Leakage Gate--Source Current Drain Voltage Gate Zero Voltage Breakdown Drain--Source nemdlto Distortion Intermodulation Efficiency Drain Distortion Intermodulation Efficiency Drain Capacitance Transfer Reverse Capacitance Output Capacitance) Matching Input (Includes Capacitance Input Transconductance Forward 1=87Mz 2=83MHz) 863 = f2 MHz, 857 = f1 MHz) 863 = f2 MHz, 857 = f1 MHz) 863 = f2 MHz, 857 = f1 MHz) 863 = f2 MHz, 857 = f1 1=87Mz 2=83MHz) 863 = f2 MHz, 857 = f1 MHz) 863 = f2 MHz, 857 = f1 (V (V (V (V (V (V (V (V (V (V (V (V (V (V (V (V DD DD DD DD DD DD DS DS DS DS GS DS DS GS DS GS =32V,V =32V,V =32V,V =10V,I =32V,I =10V,I =32Vdc,V =32Vdc,P =32Vdc,P =32Vdc,P =32Vdc,P =32V,P =32V,P =10V,I =5Vdc,V =0Vdc,I D D D D GS GS GS out out D 200 = =3A) mA) 100 = =3A) DS (1) =10 GS out out out out 8 E,I PEP, W 180 = 8 E,I PEP, W 180 = =0V,f=1MHz) =0V,f=1MHz) =0V,f=1MHz) =0Vdc) 8 E,I PEP, W 180 = I PEP, W 180 = I PEP, W 180 = I PEP, W 180 = =0Vdc) μ Characteristic μ (1) (2) (1) A) A) (1) DQ DQ uh-ulconfiguration. push--pull n DQ DQ DQ DQ 0 mA, 800 = mA, 800 = (T 00mA, 1000 = mA, 1000 = mA, 1000 = mA, 800 = C =25 (2) ° nesohrienoted) otherwise unless C I recl R32BodadCrut 0omsystem) ohm 50 Circuit, Broadband MRF372 Freescale (In (2) I recl R32Nrobn ici,5 h system) ohm 50 Circuit, Narrowband MRF372 Freescale (In V Symbol V V V (BR)DSS I C I DS(on) IMD IMD C C GS(th) GS(Q) G G GSS DSS g η η oss rss iss fs ps ps Min 2.5 68 33 16 — — — — — — — — — — — 2 0.28 14.5 Typ 260 -31 3 -- -35 3 -- 2.6 3.5 2.5 37 36 17 69 — — — 3 recl Semiconductor Freescale 0.45 Max -31 3 -- 4.5 10 — — — — — — — — — — 4 1 FDvc Data Device RF μ μ Unit dBc dBc Vdc Vdc Vdc Vdc dB dB pF pF pF Adc Adc % % S

ARCHIVE INFORMATION ARCHIVE INFORMATION recl Semiconductor Freescale Data Device RF

Coss,Ciss , Capacitance (pF) 100 150 200 50 0 1020304050600 oe C Note: iue1 aaiac essVoltage versus Capacitance 1. Figure YIA CHARACTERISTICS TYPICAL iss V osnticueiptmthn capacitance. matching input include not does DS RI-SUC OTG (VOLTS) VOLTAGE DRAIN--SOURCE , C C C oss rss iss 10 15 20 0 5

Crss , Capacitance (pF) R323MRF372R5 MRF372R3 3 ARCHIVE INFORMATION ARCHIVE INFORMATION 4 R323MRF372R5 MRF372R3 al .80MzNrobn CBa ewrsCmoetDsgain n Values and Designations Component Networks Bias DC Narrowband MHz 860 5. Table C2 C1 au ,B A, Balun PCB B R3A, B R5A, B, R4A, B R2A, B, R1A, B L4A, B L3A, B L2A, B L1A, C15 C13 B C12A, C11 B C10A, C9 B C8A, B C7A, C6 B C5A, B C14A, B, C4A, B C3A, Designation V GG + C3 R1 iue2 6 H arwadD isNetworks Bias DC Narrowband MHz 860 2. Figure R2 L1 e 1 oesR31,Hih 0mils, 50 Height RO3010, Board Rogers Circuit 01, Printed Rev Balun, Broadband MHz 860 Vertical RO4350, mils, Rogers 30 1a, Height Rev Board Circuit Printed MRF372 12 180 #A02T Coilcraft nH, 5.0 #0906--4 Coilcraft nH, #2643706001 3.85 Rite Fair Loose, Turns 3 AWG, #24 #132--11SM Coilcraft nH, 130 ATC Capacitor, Chip pF 1.2 ATC Capacitor, Chip pF 3.9 0.01 ATC Capacitor, Chip pF 5.1 2.2 ATC Capacitor, Chip pF 10.0 1.0 ATC Capacitors, Chip pF 2.7 ATC Capacitor, Chip pF 10.0 ATC Capacitors, Chip pF 100 ATC Capacitors, Chip pF 47.0 Gigatrim 22 Johansen Capacitor, Variable pF 5.0 — 0.5 ATC Capacitor, Chip pF 2.2 Ω m m m ,2 atlmCi aaios ee #T491D226K22AS Kemet Capacitors, Chip Tantalum V 22 F, Ω / hpRssos ihyDl (1206) Dale Vishay Resistors, Chip W 1/8 , ,10VCi aaios irmn#VJ3640Y225KXBAT Vitramon Capacitors, Chip V 100 F, #VJ3640Y105KXBAT Vitramon Capacitors, Chip V 100 F, m / hpRssos ihyDl (1210) Dale Vishay Resistors, Chip W 1/4 , ,10VCi aaios ee #VJ1210Y103KXBAT Kemet Capacitors, Chip V 100 F, L2 C5 ε C8 r =3.48 L3 AEDRAIN GATE C7 R3 L4 Description ε r 10.2 = 4R5 R4 C12 C10 recl Semiconductor Freescale V DD FDvc Data Device RF

ARCHIVE INFORMATION ARCHIVE INFORMATION recl Semiconductor Freescale Data Device RF ul inserted. fully when pads solder substrate PCB with the level being pads solder Balun resulting in “slot” PCB main the into fits TrimBalunPCBsothata35mil”tab”Note: 1. h microstrip) ohm (12.5 rniinpro.Teecagswl aen impac no have will changes These period. eit transition have may Prin PCBs marking signature/logo. of Semiconductor transition the begun has Freescale upt1 Output C1 C3A C3B 1. h microstrip) ohm (12.5 R1A R1B C2 L1A upt2 Output L1B R2A R2B iue3 6 H arwadCmoetLayout Component Narrowband MHz 860 3. Figure C4B C4A L2B L2A etclBlnMutn Detail Mounting Balun Vertical Ground C5B C5A L3A L3B C8A C8B C6 R3A R3B C7B C7A e oooao recl aknsdrn the during markings Freescale or Motorola her nfr,fto ucino h urn product. current the of function or fit form, on t e ici ors(Cs ihteFreescale the with (PCBs) Boards Circuit ted R4B R4A e 1a Rev MRF372 C9 L4A L4B C10B C10A R5B R5A 1 C13 C11 C12B C12A oooaVria 6 H Balun MHz 860 Vertical Motorola oesR31 5 i thick) mil (50 RO3010 Rogers C14A C14B u oacp Balun accept to out 5mlso cut slot mil 55 C usrt 3 i thick) mil (30 Substrate PCB C15 5 h microstrip) ohm (50 R323MRF372R5 MRF372R3 Input 5 ARCHIVE INFORMATION ARCHIVE INFORMATION 6 R323MRF372R5 MRF372R3 IMD, INTERMODULATION DISTORTION (dBc) η, DRAIN EFFICIENCY (%) -50 5 -- 5 4 -- 0 4 -- 5 3 -- 0 3 -- 5 2 -- 0 2 -- 5 1 -- 0 1 -- Gps, POWER GAIN (dB) 10 15 20 25 30 35 40 5 V 2=83MHz 863 = f2 MHz 857 = f1 iue7 nemdlto itrinversus Distortion Intermodulation 7. Figure DD =32Vdc V BPa/v.Ratio Peak/Avg. dB 6 I DQ DD iue5 -VBPromne(6 MHz) (860 Performance 8--VSB 5. Figure 0100 10 60mA 1600 = =32Vdc oe M esrduigDlaMre Method. Marker Delta using measured IMR Note: I DQ P out 0 mA 400 = 0 mA 800 P out UPTPWR(AT)PEP (WATTS) POWER OUTPUT , UPTPWR(AT)AVG. (WATTS) POWER OUTPUT , 0100 10 . A 1.2 G uptPower Output ps YIA W-TN ARWADCHARACTERISTICS NARROWBAND TWO--TONE TYPICAL η, DRAIN EFFICIENCY (%)

. A 1.6 Gps, POWER GAIN (dB) 10 15 20 25 30 35 IMR 0 5 V 0d ekAg Ratio Peak/Avg. dB 10 QAM 64 Mode K 2 I DQ η DD iue4 OD efrac 80MHz) (860 Performance COFDM 4. Figure 60mA 1600 = =32Vdc oe M esrduigDlaMre Method. Marker Delta using measured IMR Note: G P ps out UPTPWR(AT)AVG. (WATTS) POWER OUTPUT , 0100 10 -50 5 -- 5 4 -- 0 4 -- 5 3 -- 0 3 -- 5 2 -- 0 2 -- 5 1 -- IMR IMR, INTERMODULATION RATIO (dB) η , DRAIN EFFICIENCY (%) D G , POWER GAIN (dB) 10 15 20 25 30 35 40 45 10 12 14 16 18 20

5 ps iue8 ri fiinyvru uptPower Output versus Efficiency Drain 8. Figure η 0 mA 800 I DQ V . A 1.2 I 2=83MHz 863 = f2 MHz 857 = f1 iue6 oe anvru uptPower Output versus Gain Power 6. Figure DQ DD 60mA 1600 = 0 mA 400 0 mA 800 = =32Vdc 0100 10 0100 10 P out P out UPTPWR(AT)PEP (WATTS) POWER OUTPUT , UPTPWR(AT)PEP (WATTS) POWER OUTPUT , -50 5 -- 5 4 -- 0 4 -- 5 3 -- 0 3 -- 5 2 -- 0 2 -- 5 1 --

IMR, INTERMODULATION RATIO (dB) recl Semiconductor Freescale FDvc Data Device RF V 2=83MHz 863 = f2 MHz 857 = f1 DD =32Vdc

ARCHIVE INFORMATION ARCHIVE INFORMATION recl Semiconductor Freescale Data Device RF iue9 arwadSre qiaetSuc n odImpedance Load and Source Equivalent Series Narrowband 9. Figure Network Matching Input Z Z source load Harmonics 1.75 1.72 1.69 MHz GHz 875 860 845 f f etcrutipdnea measured as impedance circuit Test = from measured as impedance circuit Test = V DD rmdant ri,blne configuration. balanced drain, to drain from configuration. balanced gate, to gate =32V,I Z Z source source 7 MHz 875 = f .5+j14.36 + 3.35 j14.32 + 3.27 .5+j43 .3+j9.37 + 1.23 j14.30 + 2.85 + -+ -- .8- j1.46 -- 3.18 j1.98 -- 3.56 j2.50 -- 3.99 DQ Z Z Z source source o Test Under Device 0 A P mA, 800 = Ω Ω =10 4 MHz 845 = f Ω 7 MHz 875 = f 4 MHz 845 = f out 8 PEP W 180 = Z .3+j9.62 + 1.73 j9.60 + 1.54 .4+j0.56 + 4.94 j0.43 + 5.28 j0.38 + 5.63 load -- Z Z Z load load load Ω Ω Network Matching Output R323MRF372R5 MRF372R3 7 ARCHIVE INFORMATION ARCHIVE INFORMATION 8 R323MRF372R5 MRF372R3 al .40-6 H rabn CBa ewrsCmoetDsgain n Values and Designations Component Networks Bias DC Broadband MHz 470--860 6. Table au ,B A, Balun PCB D C, B, R9A, R8 R7 B R6A, B R5A, B R4TA, B R10A, B, R3A, B R2A, B R1A, L3A,B,C B L2A, B L1A, B C18A, B C17A, B C16A, B C15A, C12 C11 C10 B C9A, B C8A, B C7A, C6 C5 C4 C3A,B,C14A,B,C,D C13 C2, C1 V GG Designation R6 C9 iue1.40-6 H rabn CBa Networks Bias DC Broadband MHz 470--860 10. Figure + C8 e 1 oesR31,Hih 0mils, 50 Height RO3010, Board Rogers Circuit 01, Printed Rev Balun, Broadband MHz 660 Vertical RO4350, mils, Rogers 30 1a, Height Rev Board Circuit Printed MRF372 180 k 47.3 k 100 k 6.8 6.2 520 390 k 2.2 10 #A04T Coilcraft nH, 12.5 #0906--5 Coilcraft nH, 5.45 #1606--10 Coilcraft nH, 12.55 0.01 3.3 10 ATC Capacitors, Chip pF 3.3 ATC Capacitor, Chip pF 3.9 ATC Capacitor, Chip pF 6.8 ATC Capacitor, Chip pF 13 0.1 22 ATC Capacitors, Chip pF 6.2 ATC Capacitor, Chip pF 10.0 ATC Capacitor, Chip pF 7.5 ATC Capacitor, pF,Chip 4.7 ATC Capacitors, Chip pF 100 Capac Variable pF 8.0 — 0.8 ATC Capacitor, Chip pF 0.7 R3 R7 Ω m m Ω m m ,3 atlmCi aaios ee #T491D106K35AS Kemet Capacitors, Chip Tantalum V 35 F, #T491D226K22AS Kemet Capacitors, Chip Tantalum V 22 F, Ω Ω Ω / hpRssos ihyDl (1210) Dale Vishay Resistors, Chip W 1/4 , Ω Ω ,10VCi aaios irmn#VJ3640Y335KXBAT Vitramon Capacitors, Chip V 100 F, #VJ3640Y104KXBAT Vitramon Capacitors, Chip V 100 F, m / hpRssos ihyDl (1210) Dale Vishay Resistors, Chip W 1/4 , Ω / hpRssos ihyDl (1210) Dale Vishay Resistors, Chip W 1/4 , #NTHS—1206J14520R5% Vishay (1206) Thermistor, Dale , Vishay Resistors, Chip W 1/8 , Ω hpCpctr,ATC Capacitors, Chip F / hpRssos ihyDl (1210) Dale Vishay Resistors, Chip W 1/4 , (1210) Dale Vishay Resistors, Chip W 1/4 , / hpRsso,Vsa ae(1206) Dale Vishay Resistor, Chip W 1/8 , oetoee,Bourns Potentiometer, R2 R4T L2 ε r =3.48 AEDRAIN GATE C7 R5 tr,Jhne Gigatrim Johansen itors, L3 9 R9B R9A Description ε r 10.2 = C18 C17 recl Semiconductor Freescale + C16 FDvc Data Device RF V DD

Gps, POWER GAIN (dB) 10 12 14 16 18 20 V 1- 2=6MHz 6 = f2 -- f1 I DQ iue1.PwrGi essOtu oe iue1.ItrouainDsoto versus Distortion Intermodulation 13. Figure Power Output versus Gain Power 12. Figure DD 00mA 1000 = =32Vdc 0100 10 G ps P 6 MHz 860 6 MHz 660 = out UPTPWR(AT)PEP (WATTS) POWER OUTPUT , YIA W-TN RABN CHARACTERISTICS BROADBAND TWO--TONE TYPICAL 7 MHz 470

ηD, DRAIN EFFICIENCY (%) 10 15 20 25 30 35 40 45 5 0100 10 iue1.DanEfcec essOtu Power Output versus Efficiency Drain 14. Figure V 1- 2=6MHz 6 = f2 -- f1 I DQ DD 00mA 1000 = =32Vdc P out UPTPWR(AT)PEP (WATTS) POWER OUTPUT , η D 6 MHz 860 =

IMD, INTERMODULATION DISTORTION (dBc) -50 5 -- 5 4 -- 0 4 -- 5 3 -- 0 3 -- 5 2 -- 0 2 -- 5 1 -- 0 1 -- 7 MHz 470 V 1- 2=6MHz 6 = f2 -- f1 I DQ DD 6 MHz 660 00mA 1000 = =32Vdc M 7 MHz 470 = IMD 0100 10 P out UPTPWR(AT)PEP (WATTS) POWER OUTPUT , uptPower Output 6 MHz 660 recl Semiconductor Freescale 6 MHz 860 FDvc Data Device RF

ARCHIVE INFORMATION ARCHIVE INFORMATION recl Semiconductor Freescale Data Device RF iue1.BodadSre qiaetSuc n odImpedance Load and Source Equivalent Series Broadband 15. Figure Z source Z 7 MHz 470 = f o =10 Network Matching Input Z Z load source Ω MHz 6 .5+j0.31 + 6.25 860 760 660 560 470 6 MHz 860 = f f V etcrutipdnea measured as impedance circuit Test = from measured as impedance circuit Test = DD =32V,I rmdant ri,blne configuration. balanced drain, to drain from configuration. balanced gate, to gate Z source .7+j.682 -j1.00 -- 8.27 j0.46 + 6.67 .4+j0.14 + 7.84 j1.06 + 6.40 .6- j2.57 -- 4.46 DQ Z + -+ -- source 00m,P mA, 1000 = Ω Test Under Device out 8 PEP W 180 = .2+j0.02 + 7.52 .3+j0.73 + 8.13 .5- j0.07 -- 5.45 j3.50 -- 4.88 Z Z load -- load Ω Network Matching Output Z load R323MRF372R5 MRF372R3 7 MHz 470 = f Z o 6 MHz 860 = f =10 Ω 11 ARCHIVE INFORMATION ARCHIVE INFORMATION 12 R323MRF372R5 MRF372R3 NOTES recl Semiconductor Freescale FDvc Data Device RF

ARCHIVE INFORMATION ARCHIVE INFORMATION recl Semiconductor Freescale Data Device RF NOTES R323MRF372R5 MRF372R3 13 ARCHIVE INFORMATION ARCHIVE INFORMATION 14 R323MRF372R5 MRF372R3 NOTES recl Semiconductor Freescale FDvc Data Device RF

ARCHIVE INFORMATION ARCHIVE INFORMATION recl Semiconductor Freescale Data Device RF R S b B bbb c B ccc (LID) (INSULATOR) M M T T A A E M M H A 4X M M K 4X D b B bbb J b B bbb c B ccc 34 1 M (INSULATOR) M M T G (LID) A M A L T T N AKG DIMENSIONS PACKAGE 4 M A A M M 2 M AE375G--04 CASE M M NI--860C3 SU G ISSUE 5 B B 2X C F (FLANGE) b B bbb Q M T T PLANE SEATING A M M NOTES: .RCMEDDBL ETRDIMENSION CENTER BOLT RECOMMENDED 4. (0.762) 0.030 MEASURED BE TO H DIMENSION 3. TOLERANCES AND DIMENSIONS INTERPRET 2. INCH. DIMENSION: CONTROLLING 1. F110(89)BSDO MSCREW. 3M ON BASED (28.96) 1.140 OF BODY. PACKAGE FROM AWAY Y14.5M--1994. ASME PER TL 1: STYLE bbb DIM ccc M Q G R N K H D C B A S E L F J I .DRAIN 1. PIN .SOURCE 5. GATE 4. GATE 3. DRAIN 2. .9 .0 00 10.31 10.29 10.01 10.03 0.406 22.07 0.405 0.394 22.05 21.62 0.395 4.19 21.64 0.869 0.868 0.851 3.43 2.72 0.852 0.165 2.46 0.15 0.135 1.78 0.107 0.10 8.51 0.097 1.52 5.69 0.006 8.26 9.91 0.070 0.004 4.57 0.335 0.060 9.65 0.224 0.325 0.390 0.180 0.380 .3 .4 39 34.16 33.91 1.345 1.335 .1 .3 .03.30 3.00 0.138 0.118 I A I MAX MIN MAX MIN .15BC537BSC 5.397 BSC 0.2125 .2 BSC 0.425 BSC 1.100 .1 E .8REF 0.38 REF 0.25 REF 0.015 REF 0.010 INCHES R323MRF372R5 MRF372R3 MILLIMETERS 79 BSC 27.94 08BSC 10.8 15 ARCHIVE INFORMATION ARCHIVE INFORMATION 16 R323MRF372R5 MRF372R3 [email protected] 303--675--2150 Fax: 303--675--2140 1--800--441--2447 or 80217 Colorado Denver, 5405 Box Center P.O. Distribution Literature Semiconductor Freescale Only: Requests Literature For [email protected] 8080 2666 +800 Kong Hong N.T., Po, Tai Estate Industrial Po Tai Street King Dai 2 Center Information Ltd. Technical Kong Hong Semiconductor Freescale Asia/Pacific: 9125 5437 3 [email protected] +81 or 191014 0120 Japan 153--0064 Tokyo Meguro--ku, Shimo--Meguro, 1--8--1, 15F Tower ARCO Headquarters Ltd. Japan Semiconductor Freescale Japan: [email protected] (German) +33169354848(French) 559 92103 89 +49 (English) 52200080 8 (English) +46 456 380 1296 +44 Germany Muenchen, 81829 7 Schatzbogen Center Information Technical GmbH Deutschland Halbleiter Africa: Freescale and East, Middle Europe, [email protected] +1--480--768--2130+1--800--521--6274 or 85224 Arizona Road Chandler, School Alma N. 1300 CH370 Center, Information Technical Semiconductor Listed: Freescale Not Locations or USA/Europe [email protected] E--mail: www.freescale.com Page: Home Us: Reach to How e.9 5/2006 9, Rev. MRF372 Number: Document n rdc rcrut n pcfclydiscl specifically and circuit, or product any l te rdc rsrienmsaetepoet fterrsetv owners. respective their of property the are names © service or product other All part. Freescale the of manufacture or Freescale design that the alleges regarding such claim negligent with such was associated if Semiconductor death even or use, injury of, unauthorized personal out or of arising unintended claim fees any attorney indirectly, reasonable or and directly expenses, and damages, costs, claims, Semiconductor subs Freescale employees, officers, hold or its and unintended and indemnify such shall Buyer any Buyer Should for application, occur. products unauthorized may Semiconductor death Freescale or product use injury Semiconductor or Freescale personal purchase the where life, of situation sustain failure a the or create which support could in to application intended other applications any other for or or in body, components the are as into products use implant Semiconductor for surgical Freescale authorized others. or of intended, rights designed, license the not nor any rights convey patent not by does its under application Semiconductor customer Freescale operating each experts. All for technical time. validated customer’s over be vary must may “Typicals”, performance do including actual and parameters, and can applications specifications different and/or in sheets be vary data may Semiconductor that Freescale parameters in “Typical” provided damages. incidental or consequential limitation assu Semiconductor Freescale n rdcshri.FesaeSmcnutrmksn arny ersnainor representation warranty, to no notice regar makes further guarantee Semiconductor without Freescale changes herein. make products to any right the reserves Semiconductor document. Freescale this in information the integrated on any based fabricate circuits or integrated design or or to circuits express hereunder no granted are licenses There copyright products. implied Semiconductor enable Freescale to use solely to provided implementers is document this in Information recl eiodco,Ic 06 00 l ihsreserved. rights All 2010. 2006, Inc. Semiconductor, Freescale t n h recl ooaetaeak fFesaeSmcnutr Inc. Semiconductor, Freescale of trademarks are logo Freescale the and igtesuitab the ding lt fisproducts its of ility eaylaiiyari liability any me dais affiliate idiaries, isayadall and any aims ,addistributors and s, igoto h app the of out sing o n particula any for recl Semiconductor Freescale ytmadsoftware and system iblt,incl liability, ytm neddfor intended systems ups,nrdoes nor purpose, r amesaantall against harmless FDvc Data Device RF iaino s of use or lication dn without uding

ARCHIVE INFORMATION