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PMDPB85UPE 20 V Dual P-Channel Trench MOSFET Rev

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PMDPB85UPE 20 V Dual P-Channel Trench MOSFET Rev PMDPB85UPE 20 V dual P-channel Trench MOSFET Rev. 1 — 20 June 2012 Product data sheet 1. Product profile 1.1 General description Dual small-signal P-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020-6 (SOT1118) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits Low threshold voltage Trench MOSFET technology Very fast switching 2 kV ElectroStatic Discharge (ESD) protection 1.3 Applications Relay driver High-side load switch High-speed line driver Switching circuits 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit Per transistor VDS drain-source voltage Tj =25°C ---20V VGS gate-source voltage -8 - 8 V [1] ID drain current VGS =-4.5V; Tamb =25°C; t ≤ 5 s ---3.7A Static characteristics (per transistor) RDSon drain-source on-state VGS =-4.5V; ID =-1.3A; Tj = 25 °C - 82 103 mΩ resistance [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. Nexperia PMDPB85UPE 20 V dual P-channel Trench MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S1source TR1 6 54 D1 D2 2 G1 gate TR1 3D2drain TR2 4S2source TR2 78 G1 G2 5 G2 gate TR2 6D1drain TR1 123 Transparent top view S1 S2 7D1drain TR1 017aaa260 8D2drain TR2 DFN2020-6 (SOT1118) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PMDPB85UPE DFN2020-6 plastic thermal enhanced ultra thin small outline package; SOT1118 no leads; 6 terminals 4. Marking Table 4. Marking codes Type number Marking code PMDPB85UPE 2C 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Per transistor VDS drain-source voltage Tj =25°C - -20 V VGS gate-source voltage -8 8 V [1] ID drain current VGS =-4.5V; Tamb =25°C; t ≤ 5 s --3.7A [1] VGS =-4.5V; Tamb =25°C --2.9A [1] VGS =-4.5V; Tamb =100°C --1.8A IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs - -11.6 A [2] Ptot total power dissipation Tamb =25°C - 515 mW [1] -1170mW Tsp = 25 °C - 8330 mW Source-drain diode [1] IS source current Tamb =25°C --1.2A PMDPB85UPE All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 20 June 2012 2 of 15 Nexperia PMDPB85UPE 20 V dual P-channel Trench MOSFET Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit ESD maximum rating [3] VESD electrostatic discharge voltage HBM; C = 100 pF; R = 1.5 kΩ - 2000 V Per device Tj junction temperature -55 150 °C Tamb ambient temperature -55 150 °C Tstg storage temperature -65 150 °C [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. [2] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard footprint. [3] Measured between all pins. 017aaa123 017aaa124 120 120 Pder Ider (%) (%) 80 80 40 40 0 0 −75 −25 25 75 125 175 −75 −25 25 75 125 175 Tj (°C) Tj (°C) Fig 1. Normalized total power dissipation as a Fig 2. Normalized continuous drain current as a function of junction temperature function of junction temperature PMDPB85UPE All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 20 June 2012 3 of 15 Nexperia PMDPB85UPE 20 V dual P-channel Trench MOSFET aaa-003928 -102 ID (A) Limit RDSon = VDS/ID -10 tp = 100 μs -1 tp = 1 ms tp = 10 ms DC; Tsp = 25 °C tp = 100 ms -10-1 DC; Tamb = 25 °C; drain mounting pad 6 cm2 -10-2 -10-1 -1 -10 -102 VDS (V) IDM = single pulse Fig 3. Safe operating area; junction to ambient; continuous and peak drain currents as a function of drain-source voltage 6. Thermal characteristics Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Per transistor [1] Rth(j-a) thermal resistance in free air - 211 243 K/W from junction to [2] - 93 107 K/W ambient in free air; t ≤ 5 s [2] - 5564K/W Rth(j-sp) thermal resistance - 1215K/W from junction to solder point [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 6 cm2. PMDPB85UPE All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 20 June 2012 4 of 15 Nexperia PMDPB85UPE 20 V dual P-channel Trench MOSFET aaa-003929 103 Zth(j-a) (K/W) duty cycle = 1 0.75 102 0.5 0.33 0.25 0.2 0.1 10 0.05 0.02 0.01 1 0 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, standard footprint Fig 4. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values aaa-003930 103 Zth(j-a) (K/W) duty cycle = 1 102 0.75 0.5 0.33 0.25 0.2 10 0.1 0.05 0.02 0.01 1 0 10-1 10-5 10-4 10-3 10-2 10-1 1 10 102 103 tp (s) FR4 PCB, mounting pad for drain 6 cm2 Fig 5. Transient thermal impedance from junction to ambient as a function of pulse duration; typical values PMDPB85UPE All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 20 June 2012 5 of 15 Nexperia PMDPB85UPE 20 V dual P-channel Trench MOSFET 7. Characteristics Table 7. Characteristics Symbol Parameter Conditions Min Typ Max Unit Static characteristics (per transistor) V(BR)DSS drain-source ID =-250µA; VGS =0V; Tj =25°C-20--V breakdown voltage VGSth gate-source threshold ID =-250µA; VDS =VGS; Tj = 25 °C -0.45 -0.7 -0.95 V voltage IDSS drain leakage current VDS =-20V; VGS =0V; Tj =25°C ---1µA VDS =-20V; VGS =0V; Tj = 150 °C - - -10 µA IGSS gate leakage current VGS =8V; VDS =0V; Tj =25°C --10µA VGS =-8V; VDS =0V; Tj = 25 °C - - -10 µA RDSon drain-source on-state VGS =-4.5V; ID =-1.3A; Tj = 25 °C - 82 103 mΩ resistance VGS =-4.5V; ID =-1.3A; Tj = 150 °C - 114 144 mΩ VGS =-2.5V; ID =-1.1A; Tj = 25 °C - 107 146 mΩ VGS =-1.8V; ID =-0.8A; Tj = 25 °C - 142 210 mΩ gfs forward VDS =-10V; ID =-1.3A; Tj =25°C - 6 - S transconductance Dynamic characteristics (per transistor) QG(tot) total gate charge VDS =-10V; ID =-1.3A; VGS =-4.5V; -5.48.1nC Tj =25°C QGS gate-source charge - 0.7 - nC QGD gate-drain charge - 1 - nC Ciss input capacitance VDS = -10 V; f = 1 MHz; VGS =0V; - 514 - pF Tj =25°C Coss output capacitance - 78 - pF Crss reverse transfer -59-pF capacitance td(on) turn-on delay time VDS =-10V; ID =-1.3A; VGS =-4.5V; -6-ns RG(ext) =6Ω; Tj =25°C tr rise time - 12 - ns td(off) turn-off delay time - 47 - ns tf fall time - 21 - ns Source-drain diode (per transistor) VSD source-drain voltage IS =-0.3A; VGS =0V; Tj = 25 °C - -0.7 -1.2 V PMDPB85UPE All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 20 June 2012 6 of 15 Nexperia PMDPB85UPE 20 V dual P-channel Trench MOSFET aaa-003931 017aaa143 -12 –10–3 V = -2.5 V -8.0 V GS -4.5 V -3.0 V ID ID (A) (A) -2.2 V -8 –10–4 -2.0 V (1) (2) (3) -1.8 V -4 –10–5 -1.6 V 0 –10–6 0-4-1 -2 -3 –0.2–0.4 –0.6 –0.8 –1.0 VDS (V) VGS (V) Tj = 25 °C Tj = 25 °C; VDS = -3 V (1) minimum values (2) typical values (3) maximum values Fig 6. Output characteristics: drain current as a Fig 7. Sub-threshold drain current as a function of function of drain-source voltage; typical values gate-source voltage aaa-003932 aaa-003933 400 400 VGS = -1.6 V -2.0 V -2.5 V RDSon RDSon (mΩ) (mΩ) -1.8 V -2.2 V 300 300 200 200 T = 150 °C -3.0 V j 100 -4.5 V 100 -8.0 V Tj = 25 °C 0 0 0-4 -8 -12 0-6-2 -4 ID (A) VGS (V) Tj = 25 °C ID = -1.3 A Fig 8. Drain-source on-state resistance as a function Fig 9. Drain-source on-state resistance as a function of drain current; typical values of gate-source voltage; typical values PMDPB85UPE All information provided in this document is subject to legal disclaimers. © Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 — 20 June 2012 7 of 15 Nexperia PMDPB85UPE 20 V dual P-channel Trench MOSFET aaa-003934 aaa-003935 -12 1.50 a ID (A) 1.25 -8 Tj = 25 °C Tj = 150 °C 1.00 -4 0.75 0 0.50 0-3-1 -2 -60060120 180 VGS (V) Tj (°C) VDS > ID × RDSon Fig 10.
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