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Schottky

Asst. prof. Prajna Paramita Nanda ECE DEPT. SOPHITORIUM ENGINEERING COLLEGE CONTAINS

• • Schottky diode CONSTRUCTION • DIFFERENT DIODE • Schottky diode CONSTRUCTION • V-I Characteristics Of Schottky Barrier Diode • Schottky Barrier Diode • Applications Of Schottky Diode • Advantages Of Schottky Diode • Features Of Schottky Diode • Features Of Schottky Diode Schottky diode

• The Schottky diode, also known as Schottky barrier diode or hot- carrier diode, is a diode formed by the junction of a semiconductor with a metal. It has a low forward voltage drop and a very fast switching action.

Various Schottky-barrier : Small-signal RF devices (left), medium- and high-power Schottky rectifying diodes (middle and right) DIFFERENT DIODE Schottky diode CONSTRUCTION

• It is a unilateral junction. A metal-semiconductor junction is formed at one end and another metal- semiconductor contact is formed at the other end. It is an ideal Ohmic bidirectional contact with no potential existing between the metal and the semiconductor and it is non-rectifying. The built-in potential across the open-circuited Schottky barrier diode characterizes the Schottky diode. • Schottky diode is a function of temperature dropping. It decreases and increasing temperature concentration in N-type semiconductor. For manufacturing purposes, the metals of the Schottky barrier diode like molybdenum, platinum, chromium, tungsten Aluminium, gold, etc., are used and the semiconductor used is N-type. V-I Characteristics Of Schottky Barrier Diode

• The forward voltage drop of the Schottky barrier diode is very low compared to a normal PN junction diode. • The forward voltage drop ranges from 0.3 volts to 0.5 volts. • The forward voltage drop of the Schottky barrier is made up of . • The forward voltage drop increases at the same time increasing the doping concentration of N- type semiconductor. • The V-I characteristics of a Schottky barrier diode are very steeper compared to the V-I characteristics of normal PN junction diode due to the high concentration of current carriers. Schottky Barrier Diode

• A Schottky barrier diode is also known as Schottky or hot carrier diode. A Schottky barrier diode is a metal-semiconductor. A junction is formed by bringing metal contact with a moderately doped N-type semiconductor material. The Schottky barrier diode is a unidirectional device conducting current flows only in one direction (Conventional current flow from the metal to the semiconductor) APPLICATION

• Schottky diodes are used for the voltage clamping applications and prevention of transistor saturation due to the high current density in the Schottky diode. It’s also been a low forward voltage drop in Schottky diode, it is wasted in less heat, making them an efficient choice for applications that are sensitive and very efficient. Because of the Schottky diode used in stand-alone photovoltaic systems in order to prevent batteries from discharging purpose for the solar panels at night as well as in grid-connected systems, containing multiple strings are connected in parallel connection. Schottky diodes are also used as in power supplies. Advantages Of Schottky Diode

• Low turn-on voltage: The turn-on voltage for the diode is between 0.2 and 0.3 volts. For a silicon diode, it is against 0.6 to 0.7 volts from a standard silicon diode. • Fast recovery time: A fast recovery time means a small amount of stored charge that can be used for high-speed switching applications. • Low junction capacitance: It occupies a very small area, after the result obtained from wire point contact of the silicon. Since the capacitance levels are very small. Features Of Schottky Diode

• Higher efficiency • Low forward voltage drop • Low capacitance • Low profile surface-mount package, ultra-small • Integrated guard ring for stress protection