The Planar Process

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ECE-305: Spring 2016 Basics of Device Fabrication Professor Mark Lundstrom Electrical and Computer Engineering Purdue University, West Lafayette, IN USA [email protected] Pierret, Semiconductor Device Fundamentals (SDF) pp. 149-174 Lundstrom2/16/16 ECE 305 S16 announcements If you are planning to attend graduate or professional school, you will need 3 faculty references. I only give references to people who have: 1) Visited me during my office hours at least twice. It would also be very helpful for you all to: 2) e-mail me a photo of yourself. 2 Lundstrom ECE 305 S16 integrated circuit resistors " L % R = ! S $ W ' # & W ! " ! S ( ) L P-type 3 N-type Lundstrom ECE 305 S16 lithography 4 Fig. 4.11 from R.F. Pierret, Semiconductor Device Fundamentals Integrated circuit resistors 1) Oxidize 2) Coat with resist resist SiO2 P-Si 5 Lundstrom ECE 305 S16 Integrated circuit resistors 1) Oxidize 2) Coat with resist 3) Expose light resist SiO2 P-Si Lundstrom ECE 305 S16 6 Integrated circuit resistors 1) Oxidize 2) Coat with resist 3) Expose 4) Develop resist SiO2 P-Si Lundstrom ECE 305 S16 7 Integrated circuit resistors 1) Oxidize 5) Etch 2) Coat with resist 3) Expose 4) Develop resist SiO2 P-Si Lundstrom ECE 305 S16 8 Integrated circuit resistors 1) Oxidize 5) Etch 2) Coat with resist 6) Strip resist 3) Expose 4) Develop SiO2 P-Si Lundstrom ECE 305 S16 9 Integrated circuit resistors 1) Oxidize 5) Etch 2) Coat with resist 6) Strip resist 3) Expose 7) Dope 4) Develop P+ SiO2 t L P-Si Lundstrom ECE 305 S16 10 Integrated circuit resistors 1) Oxidize 5) Etch 2) Coat with resist 6) Strip resist 3) Expose 7) Dope 4) Develop 8) Anneal and Oxidize SiO2 t L P-Si Lundstrom ECE 305 S16 11 Integrated circuit resistors 1) Oxidize 5) Etch 9) Open contacts 2) Coat with resist 6) Strip resist 3) Expose 7) Dope 4) Develop 8) Anneal/Oxidize SiO2 t L P-Si Lundstrom ECE 305 S16 12 Integrated circuit resistors 1) Oxidize 5) Etch 9) Open contacts 2) Coat with resist 6) Strip resist 10) Deposit metal 3) Expose 7) Dope pattern, etch 4) Develop 8) Anneal/Oxidize L SiO2 t P-Si Our resistor is also PN junction! Lundstrom ECE 305 S16 13 integrated circuit resistors " L % R = ! S $ W ' # & W L P-type !S (" !) 14 Lundstrom ECE 305 S16 for more on IC manufacturing ECE 612 Purdue University: https://nanohub.org/resources/5788 https://nanohub.org/resources/5855 ECE 557 Purdue University: 15 Lundstrom ECE 305 S16 “The most important moment since humankind emerged as a life form.” Isaac Asimov (speaking about the “planar process” used to manufacture ICs -- invented by Jean Hoerni, Fairchild Semiconductor, 1959). IEEE Spectrum Dec. 2007 16 Lundstrom ECE-305 S16 .

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