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Role of Mosfets Transconductance Parameters and Threshold Voltage in CMOS Inverter Behavior in DC Mode
Preprints (www.preprints.org) | NOT PEER-REVIEWED | Posted: 28 July 2017 doi:10.20944/preprints201707.0084.v1 Article Role of MOSFETs Transconductance Parameters and Threshold Voltage in CMOS Inverter Behavior in DC Mode Milaim Zabeli1, Nebi Caka2, Myzafere Limani2 and Qamil Kabashi1,* 1 Department of Engineering Informatics, Faculty of Mechanical and Computer Engineering ([email protected]) 2 Department of Electronics, Faculty of Electrical and Computer Engineering ([email protected], [email protected]) * Correspondence: [email protected]; Tel.: +377-44-244-630 Abstract: The objective of this paper is to research the impact of electrical and physical parameters that characterize the complementary MOSFET transistors (NMOS and PMOS transistors) in the CMOS inverter for static mode of operation. In addition to this, the paper also aims at exploring the directives that are to be followed during the design phase of the CMOS inverters that enable designers to design the CMOS inverters with the best possible performance, depending on operation conditions. The CMOS inverter designed with the best possible features also enables the designing of the CMOS logic circuits with the best possible performance, according to the operation conditions and designers’ requirements. Keywords: CMOS inverter; NMOS transistor; PMOS transistor; voltage transfer characteristic (VTC), threshold voltage; voltage critical value; noise margins; NMOS transconductance parameter; PMOS transconductance parameter 1. Introduction CMOS logic circuits represent the family of logic circuits which are the most popular technology for the implementation of digital circuits, or digital systems. The small dimensions, low power of dissipation and ease of fabrication enable extremely high levels of integration (or circuits packing densities) in digital systems [1-5]. -
High Performance Power Distribution Networks with On-Chip Decoupling Capacitors for Nanoscale Integrated Circuits
High Performance Power Distribution Networks with On-Chip Decoupling Capacitors for Nanoscale Integrated Circuits by Mikhail Popovich Submitted in Partial Ful¯llment of the Requirements for the Degree Doctor of Philosophy Supervised by Professor Eby G. Friedman Department of Electrical and Computer Engineering The College School of Engineering and Applied Sciences University of Rochester Rochester, New York 2007 ii It has become appallingly obvious that our technology has exceeded our humanity. | Albert Einstein iii Dedication This work is dedicated to my parents, Mr. Evgeniy Antonovich and Mrs. Lyud- mila Mikhailovna, my wife Oksana, and my daughter Elizabeth Michelle. iv Curriculum Vitae Mikhail Popovich was born in Izhevsk, Russia in 1975. He received the B.S. degree in electrical engineering from Izhevsk State Technical University, Izhevsk, Russia in 1998, and the M.S. degree in electrical and computer engineering from the University of Rochester, Rochester, NY in 2002, where he is completing the Ph.D. degree in electrical engineering. He was an intern at Freescale Semiconductor Corporation, Tempe, AZ, in the summer 2005, where he worked on signal integrity in RF and mixed-signal ICs and developed design techniques and methodologies for placing distributed on-chip de- coupling capacitors. His professional experience also includes characterization of sub- strate and interconnect crosstalk noise in CMOS imaging circuits for the Eastman Kodak Company, Rochester, NY. He has authored a book and several conference and journal papers in the areas of power distribution networks in CMOS VLSI circuits, placement of on-chip decoupling capacitors, and the inductive properties of on-chip v interconnect. His research interests are in the areas of on-chip noise, signal integrity, and interconnect design including on-chip inductive e®ects, optimization of power distribution networks, and the design of on-chip decoupling capacitors. -
Logic Styles with Mosfets
Logic Styles with MOSFETs NMOS Logic One way of using MOSFET transistors to produce logic circuits uses only n-type (n-p-n) transistors, and this style is called NMOS logic (N for n-type transistors). An inverter circuit in NMOS is shown in the figure with n-p-n transistors replacing both the switch and the resistor of the inverter circuit examined earlier. The lower transistor in the circuit operates as a switch exactly as the idealised switch in the original circuit: with 5V on the Gate input, the conducting channel is created in the transistor and the “switch” is closed; with 0V on the Gate there is no channel and the transistor is non-conducting - the “switch” is open. The depletion mode transistor is produced by adding a small amount of donor material to the The upper transistor, called a depletion mode channel region of a n-p-n transistor, so that there are a small number of free electrons in the channel transistor, operates as a resistor to limit current even when there is no electric field across the flow when the “switch” is closed. This transistor is insulator. This provides a connection through the a modified n-p-n transistor that always has a transistor for all Gate voltages. The conductivity of channel present and is always conducting, although the channel is lowest (Resistance is highest) when the conductivity is low when there is 0V on the the Gate is at 0V. When the Gate is at 5V and more Gate and higher when 5V is on the Gate: see Box. -
Introduction to the Course. in This Lecture I Would Try to Set the Course in Perspective
Introduction to the course. In this lecture I would try to set the course in perspective. Before we embark on learning something, it is good to ponder why it would be interesting, besides the fact that it can fetch useful course credits. What do you understand by VLSI? In retrospect, integrated circuits having 10s of devices were called small scale integrated circuits (SSI), a few hundreds were called medium scale few thousands large scale. The game stopped with VLSI as people lost the count (not really). What does the word VLSI bring to your mind? Discussion to follow. What do you understand by technology? Discussion to follow. Technology is the application of scientific knowledge for practical purposes. For example, why you may not call VLSI circuit design as VLSI technology? This is by convention in the semiconductor business research and business community. The convention is to treat fabrication technology as the “technology”. In this course we would discuss and try to learn how Silicon Integrated Circuits are fabricated. Integrated circuits are fabricated by a sequence of fabrication steps called unit processes. A unit process would add to or subtract from a substrate. Examples of unit processes can be cleaning of a wafer, deposition of a thin film of a material and so on. The unit processes are not uniquely applied to VLSI fabrication only. I can combine several of these unit processes to make solar cells. I can do same for making MEMS devices. So the unit processes can be thought of as pieces in a jigsaw puzzles. The outcome would depend on how you sequence the unit processes. -
Failure Precursors for Insulated Gate Bipolar Transistors (Igbts) Nishad Patil1, Diganta Das1, Kai Goebel2 and Michael Pecht1
Failure Precursors for Insulated Gate Bipolar Transistors (IGBTs) 1 1 2 1 Nishad Patil , Diganta Das , Kai Goebel and Michael Pecht 1Center for Advanced Life Cycle Engineering (CALCE) University of Maryland College Park, MD 20742, USA 2NASA Ames Research Center Moffett Field, CA 94035, USA Abstract Failure precursors indicate changes in a measured variable that can be associated with impending failure. By identifying precursors to failure and by monitoring them, system failures can be predicted and actions can be taken to mitigate their effects. In this study, three potential failure precursor candidates, threshold voltage, transconductance, and collector-emitter ON voltage, are evaluated for insulated gate bipolar transistors (IGBTs). Based on the failure causes determined by the failure modes, mechanisms and effects analysis (FMMEA), IGBTs are aged using electrical-thermal stresses. The three failure precursor candidates of aged IGBTs are compared with new IGBTs under a temperature range of 25-200oC. The trends in the three electrical parameters with changes in temperature are correlated to device degradation. A methodology is presented for validating these precursors for IGBT prognostics using a hybrid approach. Keywords: Failure precursors, IGBTs, prognostics Failure precursors indicate changes in a measured variable structure of an IGBT is similar to that of a vertical that can be associated with impending failure [1]. A diffusion power MOSFET (VDMOS) [3] except for an systematic method for failure precursor selection is additional p+ layer above the collector as seen in Figure 1. through the use of the failure modes, mechanisms, and The main characteristic of the vertical configuration is that effects analysis (FMMEA) [2]. -
Ionizing Radiation Effects on CMOS Imagers Manufactured in Deep Submicron Process
Ionizing Radiation Effects on CMOS Imagers Manufactured in Deep Submicron Process Vincent Goiffona, Pierre Magnana, Fr´ed´eric Bernardb, Guy Rollandb, Olivier Saint-P´ec, Nicolas Hugera and Franck Corbi`erea aUniversit´ede Toulouse, ISAE, 10 avenue E. Belin, 31055, Toulouse, France; bCNES, 18 avenue E. Belin, 31401, Toulouse, France; cEADS Astrium, 31 avenue des cosmonautes, 31402, Toulouse, France ABSTRACT We present here a study on both CMOS sensors and elementary structures (photodiodes and in-pixel MOSFETs) manufactured in a deep submicron process dedicated to imaging. We designed a test chip made of one 128×128- 3T-pixel array with 10 µm pitch and more than 120 isolated test structures including photodiodes and MOSFETs with various implants and different sizes. All these devices were exposed to ionizing radiation up to 100 krad and their responses were correlated to identify the CMOS sensor weaknesses. Characterizations in darkness and under illumination demonstrated that dark current increase is the major sensor degradation. Shallow trench isolation was identified to be responsible for this degradation as it increases the number of generation centers in photodiode depletion regions. Consequences on hardness assurance and hardening-by-design are discussed. Keywords: CMOS image sensor, CIS, APS, deep submicron technology, ionizing radiation, total dose, dark current, STI, hardening by design, RHDB 1. INTRODUCTION Ionizing radiation effects on CMOS image sensors for space and scientific applications have been studied1–6 for several years. However, the use of deep submicron technologies (DSM) has brought new behaviors7 such as enhanced gate oxide hardness or radiation induced narrow channel effect.8 These effects have been initially observed and explained on deep submicron low voltage MOS transistors dedicated to digital logic applications. -
AN5252 Low-Voltage Power MOSFET Switching Behavior And
AN5252 Application note Low-voltage Power MOSFET switching behavior and performance evaluation in motor control application topologies Introduction During the last years, some applications based on electrical power conversion are gaining more and more space in the civil and industrial fields. The constant development of microprocessors and the improvement of modulation techniques, which are useful for the control of power devices, have led to a more accurate control of the converted power as well as of the power dissipation, thus increasing the efficiency of the motor control applications. Nowdays, frequency modulation techniques are used to control the torque and the speed of brushless motors in several high- and low-voltage applications and in different circuit topologies using power switches in different technologies such as MOSFETs and IGBTs. Therefore, the devices have to guarantee the best electrical efficiency and the least possible impact in terms of emissions. The aim of this application note is to provide a description of the most important parameters which are useful for choosing a low- voltage Power MOSFET device for a motor control application. Three different motor control applications and topology cases are deeply analyzed to offer to motor drive designers the guidelines required for an efficient and reliable design when using the MOSFET technology in hard-switch applications: • BLDC motor in a 3-phase inverter topology • DC motor in H-bridge configuration • DC motor in single-switch configuration AN5252 - Rev 1 - November 2018 - By C. Mistretta and F. Scrimizzi www.st.com For further information contact your local STMicroelectronics sales office. AN5252 Control techniques and brushless DC (BLDC) motors 1 Control techniques and brushless DC (BLDC) motors During the last years, servomotors have evolved from mostly brush to brushless type. -
Vlsi Design Lecture Notes B.Tech (Iv Year – I Sem) (2018-19)
VLSI DESIGN LECTURE NOTES B.TECH (IV YEAR – I SEM) (2018-19) Prepared by Dr. V.M. Senthilkumar, Professor/ECE & Ms.M.Anusha, AP/ECE Department of Electronics and Communication Engineering MALLA REDDY COLLEGE OF ENGINEERING & TECHNOLOGY (Autonomous Institution – UGC, Govt. of India) Recognized under 2(f) and 12 (B) of UGC ACT 1956 (Affiliated to JNTUH, Hyderabad, Approved by AICTE - Accredited by NBA & NAAC – ‘A’ Grade - ISO 9001:2015 Certified) Maisammaguda, Dhulapally (Post Via. Kompally), Secunderabad – 500100, Telangana State, India Unit -1 IC Technologies, MOS & Bi CMOS Circuits Unit -1 IC Technologies, MOS & Bi CMOS Circuits UNIT-I IC Technologies Introduction Basic Electrical Properties of MOS and BiCMOS Circuits MOS I - V relationships DS DS PMOS MOS transistor Threshold Voltage - VT figure of NMOS merit-ω0 Transconductance-g , g ; CMOS m ds Pass transistor & NMOS Inverter, Various BiCMOS pull ups, CMOS Inverter Technologies analysis and design Bi-CMOS Inverters Unit -1 IC Technologies, MOS & Bi CMOS Circuits INTRODUCTION TO IC TECHNOLOGY The development of electronics endless with invention of vaccum tubes and associated electronic circuits. This activity termed as vaccum tube electronics, afterward the evolution of solid state devices and consequent development of integrated circuits are responsible for the present status of communication, computing and instrumentation. • The first vaccum tube diode was invented by john ambrase Fleming in 1904. • The vaccum triode was invented by lee de forest in 1906. Early developments of the Integrated Circuit (IC) go back to 1949. German engineer Werner Jacobi filed a patent for an IC like semiconductor amplifying device showing five transistors on a common substrate in a 2-stage amplifier arrangement. -
Transistors to Integrated Circuits
resistanc collectod ean r capacit foune yar o t d commercial silicon controlled rectifier, today's necessarye b relative .Th e advantage lineaf so r thyristor. This later wor alss kowa r baseou n do and circular structures are considered both for 1956 research [19]. base resistanc r collectofo d an er capacity. Parameters, which are expected to affect the In the process of diffusing the p-type substrate frequency behavior considerede ar , , including wafer into an n-p-n configuration for the first emitter depletion layer capacity, collector stage of p-n-p-n construction, particularly in the depletion layer capacit diffusiod yan n transit redistribution "drive-in" e donophasth f ro e time. Finall parametere yth s which mighe b t diffusion at higher temperature in a dry gas obtainabl comparee ear d with those needer dfo ambient (typically > 1100°C in H2), Frosch a few typical switching applications." would seriously damag r waferseou wafee Th . r surface woul e erodedb pittedd an d r eveo , n The Planar Process totally destroyed. Every time this happenee dth s e apparenlosexpressiowa th s y b tn o n The development of oxide masking by Frosch Frosch' smentiono t face t no , ourn o , s (N.H.). and Derick [9,10] on silicon deserves special We would make some adjustments, get more attention inasmuch as they anticipated planar, oxide- silicon wafers ready, and try again. protected device processing. Silicon is the key ingredien oxids MOSFEr it fo d ey an tpave wa Te dth In the early Spring of 1955, Frosch commented integrated electronics [22]. -
Design, Implementation, Modeling, and Optimization of Next Generation Low-Voltage Power Mosfets
Design, Implementation, Modeling, and Optimization of Next Generation Low-Voltage Power MOSFETs by Abraham Yoo A thesis submitted in conformity with the requirements for the degree of Doctor of Philosophy Department of Materials Science and Engineering University of Toronto © Copyright by Abraham Yoo 2010 Design, Implementation, Modeling, and Optimization of Next Generation Low-Voltage Power MOSFETs Abraham Yoo Doctor of Philosophy Department of Materials Science and Engineering University of Toronto 2010 Abstract In this thesis, next generation low-voltage integrated power semiconductor devices are proposed and analyzed in terms of device structure and layout optimization techniques. Both approaches strive to minimize the power consumption of the output stage in DC-DC converters. In the first part of this thesis, we present a low-voltage CMOS power transistor layout technique, implemented in a 0.25µm, 5 metal layer standard CMOS process. The hybrid waffle (HW) layout was designed to provide an effective trade-off between the width of diagonal source/drain metal and the active device area, allowing more effective optimization between switching and conduction losses. In comparison with conventional layout schemes, the HW layout exhibited a 30% reduction in overall on-resistance with 3.6 times smaller total gate charge for CMOS devices with a current rating of 1A. Integrated DC-DC buck converters using HW output stages were found to have higher efficiencies at switching frequencies beyond multi-MHz. ii In the second part of the thesis, we present a CMOS-compatible lateral superjunction FINFET (SJ-FINFET) on a SOI platform. One drawback associated with low-voltage SJ devices is that the on-resistance is not only strongly dependent on the drift doping concentration but also on the channel resistance as well. -
Class 08: NMOS, Pseudo-NMOS
Class 08: NMOS, Pseudo-NMOS Topics: •02 NMOS Logic Gates •03 NMOS Logic Gates •04 Pseudo-NMOS •05 Pseudo-NMOS •06 Transistor Equivalency Dr. Joseph Elias; Dr. Andrew Mason 1 Class 08: NMOS, Pseudo-NMOS NMOS (Martin c. 1) § nMOS Inverter with resistive load § nMOS Inverter with depletion load Depletion nMOS, Vtn < 0 always ON for VGS = 0 § switch level model W/L Q1 > W/L Q2 so Q1 can “pull down” Vout § nMOS NOR gate c = a+b (a) NMOS off (b) NMOS on want to realize resistor with a transistor § nMOS NAND gate § Including transistor resistance c = ab rds º channel resistance RL >> rds so output close to 0V Dr. Joseph Elias; Dr. Andrew Mason 2 Class 08: NMOS, Pseudo-NMOS NMOS (Martin c. 1) • General nMOS schematic Examples: depletion-load nMOS logic – single load transistor – parallel and series nMOS transistor to complete the compliment of the desired function i.e., they determine when the output is low “0” rather than high “1” Dr. Joseph Elias; Dr. Andrew Mason 3 Class 08: NMOS, Pseudo-NMOS Pseudo-NMOS (Martin c. 4) •NMOS Common-Source Amplifier with •Pseudo-NMOS inverter with PMOS load current sourrce load and load capacitor •Choose W/L so that: •Choose Vbias in between VDD and ground Q2 always on since |Vgs| > |Vtp| Q2 in saturation if (for VDD=3.3) |Vds| > |Veff| > |Vgs| – |Vt| VDD – Vout > |Vgs| - |Vt| Vout < VDD - |Vgs| + |Vt| Vout < 1.65 + Vt < 2.45 Q1 in saturation if Vgs = Vin > Vt Vds > Veff > Vgs – Vt => •Current-source realized with a PMOS transistor Vout > Vin - Vt •Power Dissipation: Veff = Vgs - Vt output low (Vin is high): P = IL * VDD Vds = Vgs + Vdg at saturation, Vdg=-Vt output high (Vin is low): P = 0 Valid if: average static dissipation: P = ½ * IL * VDD Veff = |Vds-sat| > |Vgs| - |Vtp| -want drain at least Vt from gate Dr. -
Fundamentals of MOSFET and IGBT Gate Driver Circuits
Application Report SLUA618A–March 2017–Revised October 2018 Fundamentals of MOSFET and IGBT Gate Driver Circuits Laszlo Balogh ABSTRACT The main purpose of this application report is to demonstrate a systematic approach to design high performance gate drive circuits for high speed switching applications. It is an informative collection of topics offering a “one-stop-shopping” to solve the most common design challenges. Therefore, it should be of interest to power electronics engineers at all levels of experience. The most popular circuit solutions and their performance are analyzed, including the effect of parasitic components, transient and extreme operating conditions. The discussion builds from simple to more complex problems starting with an overview of MOSFET technology and switching operation. Design procedure for ground referenced and high side gate drive circuits, AC coupled and transformer isolated solutions are described in great details. A special section deals with the gate drive requirements of the MOSFETs in synchronous rectifier applications. For more information, see the Overview for MOSFET and IGBT Gate Drivers product page. Several, step-by-step numerical design examples complement the application report. This document is also available in Chinese: MOSFET 和 IGBT 栅极驱动器电路的基本原理 Contents 1 Introduction ................................................................................................................... 2 2 MOSFET Technology ......................................................................................................