DOCSLIB.ORG

Insulated Gate Bipolar Transistors (Igbts)

Total Page：16

File Type：pdf, Size：1020Kb

Download full-text PDF Read full-text
Insulated Gate Bipolar Transistors (Igbts) ECE442 Power Semiconductor Devices and Integrated Circuits Insulated Gate Bipolar Transistors (IGBTs) Zheng Yang (ERF 3017, email: [email protected]) Silicon Power Device Status Overview Silicon Power Rectifiers In the case of low voltage (<100V), the silicon P-i-N rectifier has been replaced by the silicon Schottky rectifier. In the case of high voltage (>100V), the silicon P-i-N rectifier continues to dominate but significant improvements are expected. Silicon Power Switches In the case of low voltage (<100V) systems, the silicon bipolar power transistor has been replaced by the silicon power MOSFET. In the case of high voltage (>100V) systems, the silicon bipolar power transistor has been replaced by the silicon IGBT. Power devices from wide-bandgap materials [cited from “H Amano et al, “The 2018 GaN power electronics roadmap”, Journal of Physics D: Applied Physics 51, 163001 (2018)] Background Pros of power MOSFET: (1) It has an excellent low on-state voltage drop due to the low resistance of the drift region (at low and modest voltages). (2) It is a voltage-controlled device and has a very high input impedance in steady-state due to its MOS gate structure. (3) It has a very fast inherent switching speed in comparison to power BJTs, due to the absence of minority carrier injection. (4) It has superior ruggedness and forward biased safe operating area (SOA) when compared to power BJTs. Cons of power MOSFET: Due to its excellent electrical characteristics, it would be desirable to utilize power MOSFET’s for high voltage power electronics applications. Unfortunately, the specific on-resistance of the drift region increases very rapidly with increasing breakdown voltage because of the need to reduce its doping concentration and increase its thickness. Thus, in spite of the ability to obtain nearly ideal specific on-resistance with silicon UMOSFET structures (at relative low voltage), they are not satisfactory for applications that require breakdown voltages above 300 V due to their high on-state power dissipation. Pros of power BJT: Superior on-state characteristics. Cons of power BJT: (1) One of the major shortcomings of the power BJT is its low-current gain when designed to operate at high voltages. (2) Poor SOA. Specific on-resistance vs. Breakdown voltage in Power MOSFETs [cited from “B. J. Baliga, “Trends in Power Semiconductor Devices”, IEEE Transactions on Electronic Devices 43(10), 1717-1731 (1996)] “Hybrid” MOS-bipolar power devices One of the approaches taken to create an improved high-voltage switch is to use a hybrid solution with a power MOSFET structure providing the gate drive current to a bipolar power transistor. The equivalent circuit for this hybrid MOS-bipolar configuration together with its monolithic implementation in the figure above. “Hybrid” MOS-bipolar power devices (cont’d) Note that the MOSFET and bipolar transistor are located in different portions of the silicon chip in this concept. The gate drive signal for this hybrid configuration is applied to the power MOSFET, providing the advantages of compact, low cost, integrated gate drive circuits made possible by the high input impedance, voltage-controlled operation. The source current for the power MOSFET is used to provide the base drive current for the bipolar power transistor. The bipolar power transistor is designed to carry most of the device current because of its superior on-state characteristics. Both the transistors can be simultaneously fabricated by forming a single P-region as the base of the bipolar power transistor and the base of the power MOSFET, and a single N+ diffusion to create the emitter of the bipolar power transistor and the source of the power MOSFET. “Hybrid” MOS-bipolar power devices (cont’d) Unfortunately, the hybrid MOS-bipolar configuration has many disadvantages. (1) The power MOSFET must have the same high-voltage blocking capability as the bipolar power transistor. (why? share the same drift region) The high specific on-resistance for high-voltage power MOSFET structures, together with the low-current gain for the bipolar power transistor, results in a large area occupied by the power MOSFET in spite of typically carrying a tenth of the total device current. This reduces the average on-state current density making the die size and cost large. (2) A reverse base drive current cannot be applied in this circuit to the bipolar power transistor resulting in a very long turn-off time. Attempts made to improve upon this circuit by using an additional MOSFET in series with the emitter of the bipolar transistor have not found widespread applications. Introduction of IGBT The IGBT represents the true MOS-bipolar integration in the sense of intermingling the physics of operation of the MOSFET structure with the physics of operation of bipolar transistors. In this concept, the MOSFET structure is used to provide the base drive current for the bipolar transistor with the bipolar transistor used to modulate the conductivity of the drift region for the MOSFET structure. The reduced resistance of the power MOSFET structure allows providing much greater base drive current to the bipolar transistor in this configuration. Consequently, the bipolar power transistor structure can be altered from the traditional narrow-base N-P-N transistor structure to the wide-base P-N-P transistor structure. Although this change reduces the current gain of the bipolar transistor, it greatly enhances the SOA for the composite structure. Moreover, the IGBT structure has inherent forward- and reverse-blocking capability enabling its utilization in both DC and AC circuit applications. The first IGBT devices with substantial current ratings were reported in the literature in 1982 with a symmetric (equal forward and reverse) blocking voltage capability of 600 V in recognition of their prospective applications in DC and AC circuits. It was soon apparent that the asymmetrical IGBT structure, with only forward-blocking capability, could be optimized with superior on-state and switching speed capability. The ability to scale the voltage rating of the IGBT structure with modest increase in the on-state voltage drop was also recognized immediately after its invention. This provided a strong impetus to scale up the voltage rating of IGBT structures. Interest in reducing the on-state voltage drop for IGBTs motivated the utilization of a trench-gate architecture in place of the planar-gate configuration in 1987. Subsequently, the observation of an enhanced carrier concentration in the vicinity of the trench-gate region, named the injection enhancement effect, has stimulated the development of devices that have the same high-voltage and current-handling capability as planar devices. Evolution of IGBT structures (NPT = non-punch through; PT = punch through) [cited from “B. J. Baliga, “Trends in Power Semiconductor Devices”, IEEE Transactions on Electronic Devices 43(10), 1717-1731 (1996)] Evolution of IGBT voltage ratings The first IGBT devices with substantial current ratings were reported in the literature in 1982 with a symmetric (equal forward and reverse) blocking voltage capability of 600 V. Within a short span of 10 years, devices capable of supporting over 3,000 V were developed. Continued interest in using the IGBT for traction (electric locomotive drives) applications led to the scaling up of the voltage ratings to 6,500 V for these devices by work done in Europe and Japan. Evolution of IGBT current handling capability The growth in the current-handling capability for the IGBT devices is shown in the figure above. The first IGBTs reported in 1982 had a modest current rating of 10 A, which quickly scaled to 25 A for use in adjustable speed motor drives for air-conditioning applications. Since then, interest in Europe and Japan in using the IGBT for traction applications has motivated a steady growth in the current-handling capability. This has been accomplished by scaling the die size as well as improving the packaging. Press pack IGBTs have now become available with the capability of switching 2,000 A. These devices have utilized the planar-gate structure due its larger die yield and ruggedness. The current-handling capability of trench-gate IGBT devices has generally lagged behind in time when compared with planar gate devices. However, trench-gate IGBTs have now been developed capable of handling 1,300 A. Evolution of IGBT power handling capability The extraordinarily rapid growth in the power-handling capability of IGBT devices is shown in the figure above. The first IGBTs reported in 1982 were capable of delivering 6 kW of power to a load. Since then, a rapid growth in power-handling capability has been achieved by scaling both the voltage and the current ratings. A single IGBT module is now available with the ability to control 9 MW of power. Structure of symmetric IGBT devices The basic structure for an n-channel symmetric blocking IGBT structure is illustrated in the figure above. The current-carrying terminals for the IGBT structure have been labeled the emitter and collector terminals because this made the device structure pin compatible with existing bipolar transistor circuits when the IGBT was initially developed. (Unfortunately, this is contradictory to the physics of operation of the internal bipolar transistor within the IGBT structure.) The control terminal for the IGBT is labeled as a gate terminal because it has an MOS structure similar to that in a power MOSFET device. Ruggedness Improvement (from section 6.9.3) The ruggedness of the power U-MOSFET structure has been found to be inferior to that of the planar D-MOSFET structure. The primary reason for the failure of power U-MOSFET devices, under inductive load switching operation, has been found to be the enhanced electric field generated at the sharp corners of the trenches. This problem can be overcome by rounding the bottom of the trenches.
Load more

Recommended publications
  • Failure Precursors for Insulated Gate Bipolar Transistors (Igbts) Nishad Patil1, Diganta Das1, Kai Goebel2 and Michael Pecht1
    Failure Precursors for Insulated Gate Bipolar Transistors (IGBTs) 1 1 2 1 Nishad Patil , Diganta Das , Kai Goebel and Michael Pecht 1Center for Advanced Life Cycle Engineering (CALCE) University of Maryland College Park, MD 20742, USA 2NASA Ames Research Center Moffett Field, CA 94035, USA Abstract Failure precursors indicate changes in a measured variable that can be associated with impending failure. By identifying precursors to failure and by monitoring them, system failures can be predicted and actions can be taken to mitigate their effects. In this study, three potential failure precursor candidates, threshold voltage, transconductance, and collector-emitter ON voltage, are evaluated for insulated gate bipolar transistors (IGBTs). Based on the failure causes determined by the failure modes, mechanisms and effects analysis (FMMEA), IGBTs are aged using electrical-thermal stresses. The three failure precursor candidates of aged IGBTs are compared with new IGBTs under a temperature range of 25-200oC. The trends in the three electrical parameters with changes in temperature are correlated to device degradation. A methodology is presented for validating these precursors for IGBT prognostics using a hybrid approach. Keywords: Failure precursors, IGBTs, prognostics Failure precursors indicate changes in a measured variable structure of an IGBT is similar to that of a vertical that can be associated with impending failure [1]. A diffusion power MOSFET (VDMOS) [3] except for an systematic method for failure precursor selection is additional p+ layer above the collector as seen in Figure 1. through the use of the failure modes, mechanisms, and The main characteristic of the vertical configuration is that effects analysis (FMMEA) [2].
    [Show full text]
  • MOSFET - Wikipedia, the Free Encyclopedia
    MOSFET - Wikipedia, the free encyclopedia http://en.wikipedia.org/wiki/MOSFET MOSFET From Wikipedia, the free encyclopedia The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET), is by far the most common field-effect transistor in both digital and analog circuits. The MOSFET is composed of a channel of n-type or p-type semiconductor material (see article on semiconductor devices), and is accordingly called an NMOSFET or a PMOSFET (also commonly nMOSFET, pMOSFET, NMOS FET, PMOS FET, nMOS FET, pMOS FET). The 'metal' in the name (for transistors upto the 65 nanometer technology node) is an anachronism from early chips in which the gates were metal; They use polysilicon gates. IGFET is a related, more general term meaning insulated-gate field-effect transistor, and is almost synonymous with "MOSFET", though it can refer to FETs with a gate insulator that is not oxide. Some prefer to use "IGFET" when referring to devices with polysilicon gates, but most still call them MOSFETs. With the new generation of high-k technology that Intel and IBM have announced [1] (http://www.intel.com/technology/silicon/45nm_technology.htm) , metal gates in conjunction with the a high-k dielectric material replacing the silicon dioxide are making a comeback replacing the polysilicon. Usually the semiconductor of choice is silicon, but some chip manufacturers, most notably IBM, have begun to use a mixture of silicon and germanium (SiGe) in MOSFET channels. Unfortunately, many semiconductors with better electrical properties than silicon, such as gallium arsenide, do not form good gate oxides and thus are not suitable for MOSFETs.
    [Show full text]
  • AN5252 Low-Voltage Power MOSFET Switching Behavior And
    AN5252 Application note Low-voltage Power MOSFET switching behavior and performance evaluation in motor control application topologies Introduction During the last years, some applications based on electrical power conversion are gaining more and more space in the civil and industrial fields. The constant development of microprocessors and the improvement of modulation techniques, which are useful for the control of power devices, have led to a more accurate control of the converted power as well as of the power dissipation, thus increasing the efficiency of the motor control applications. Nowdays, frequency modulation techniques are used to control the torque and the speed of brushless motors in several high- and low-voltage applications and in different circuit topologies using power switches in different technologies such as MOSFETs and IGBTs. Therefore, the devices have to guarantee the best electrical efficiency and the least possible impact in terms of emissions. The aim of this application note is to provide a description of the most important parameters which are useful for choosing a low- voltage Power MOSFET device for a motor control application. Three different motor control applications and topology cases are deeply analyzed to offer to motor drive designers the guidelines required for an efficient and reliable design when using the MOSFET technology in hard-switch applications: • BLDC motor in a 3-phase inverter topology • DC motor in H-bridge configuration • DC motor in single-switch configuration AN5252 - Rev 1 - November 2018 - By C. Mistretta and F. Scrimizzi www.st.com For further information contact your local STMicroelectronics sales office. AN5252 Control techniques and brushless DC (BLDC) motors 1 Control techniques and brushless DC (BLDC) motors During the last years, servomotors have evolved from mostly brush to brushless type.
    [Show full text]
  • Design, Implementation, Modeling, and Optimization of Next Generation Low-Voltage Power Mosfets
    Design, Implementation, Modeling, and Optimization of Next Generation Low-Voltage Power MOSFETs by Abraham Yoo A thesis submitted in conformity with the requirements for the degree of Doctor of Philosophy Department of Materials Science and Engineering University of Toronto © Copyright by Abraham Yoo 2010 Design, Implementation, Modeling, and Optimization of Next Generation Low-Voltage Power MOSFETs Abraham Yoo Doctor of Philosophy Department of Materials Science and Engineering University of Toronto 2010 Abstract In this thesis, next generation low-voltage integrated power semiconductor devices are proposed and analyzed in terms of device structure and layout optimization techniques. Both approaches strive to minimize the power consumption of the output stage in DC-DC converters. In the first part of this thesis, we present a low-voltage CMOS power transistor layout technique, implemented in a 0.25µm, 5 metal layer standard CMOS process. The hybrid waffle (HW) layout was designed to provide an effective trade-off between the width of diagonal source/drain metal and the active device area, allowing more effective optimization between switching and conduction losses. In comparison with conventional layout schemes, the HW layout exhibited a 30% reduction in overall on-resistance with 3.6 times smaller total gate charge for CMOS devices with a current rating of 1A. Integrated DC-DC buck converters using HW output stages were found to have higher efficiencies at switching frequencies beyond multi-MHz. ii In the second part of the thesis, we present a CMOS-compatible lateral superjunction FINFET (SJ-FINFET) on a SOI platform. One drawback associated with low-voltage SJ devices is that the on-resistance is not only strongly dependent on the drift doping concentration but also on the channel resistance as well.
    [Show full text]
  • Fundamentals of MOSFET and IGBT Gate Driver Circuits
    Application Report SLUA618A–March 2017–Revised October 2018 Fundamentals of MOSFET and IGBT Gate Driver Circuits Laszlo Balogh ABSTRACT The main purpose of this application report is to demonstrate a systematic approach to design high performance gate drive circuits for high speed switching applications. It is an informative collection of topics offering a “one-stop-shopping” to solve the most common design challenges. Therefore, it should be of interest to power electronics engineers at all levels of experience. The most popular circuit solutions and their performance are analyzed, including the effect of parasitic components, transient and extreme operating conditions. The discussion builds from simple to more complex problems starting with an overview of MOSFET technology and switching operation. Design procedure for ground referenced and high side gate drive circuits, AC coupled and transformer isolated solutions are described in great details. A special section deals with the gate drive requirements of the MOSFETs in synchronous rectifier applications. For more information, see the Overview for MOSFET and IGBT Gate Drivers product page. Several, step-by-step numerical design examples complement the application report. This document is also available in Chinese: MOSFET 和 IGBT 栅极驱动器电路的基本原理 Contents 1 Introduction ................................................................................................................... 2 2 MOSFET Technology ......................................................................................................
    [Show full text]
  • Power MOSFET Basics by Vrej Barkhordarian, International Rectifier, El Segundo, Ca
    Power MOSFET Basics By Vrej Barkhordarian, International Rectifier, El Segundo, Ca. Breakdown Voltage......................................... 5 On-resistance.................................................. 6 Transconductance............................................ 6 Threshold Voltage........................................... 7 Diode Forward Voltage.................................. 7 Power Dissipation........................................... 7 Dynamic Characteristics................................ 8 Gate Charge.................................................... 10 dV/dt Capability............................................... 11 www.irf.com Power MOSFET Basics Vrej Barkhordarian, International Rectifier, El Segundo, Ca. Discrete power MOSFETs Source Field Gate Gate Drain employ semiconductor Contact Oxide Oxide Metallization Contact processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current n* Drain levels are significantly different n* Source t from the design used in VLSI ox devices. The metal oxide semiconductor field effect p-Substrate transistor (MOSFET) is based on the original field-effect Channel l transistor introduced in the 70s. Figure 1 shows the device schematic, transfer (a) characteristics and device symbol for a MOSFET. The ID invention of the power MOSFET was partly driven by the limitations of bipolar power junction transistors (BJTs) which, until recently, was the device of choice in power electronics applications. 0 0 V V Although it is not possible to T GS define absolutely the operating (b) boundaries of a power device, we will loosely refer to the I power device as any device D that can switch at least 1A. D The bipolar power transistor is a current controlled device. A SB (Channel or Substrate) large base drive current as G high as one-fifth of the collector current is required to S keep the device in the ON (c) state. Figure 1. Power MOSFET (a) Schematic, (b) Transfer Characteristics, (c) Also, higher reverse base drive Device Symbol.
    [Show full text]
  • Analytical Modeling of Device-Circuit Interactions for the Power Insulated Gate Bipolar Transistor (Igbt)*
    ANALYTICAL MODELING OF DEVICE-CIRCUIT INTERACTIONS FOR THE POWER INSULATED GATE BIPOLAR TRANSISTOR (IGBT)* ALLEN R. HEFNER, JR. MEMBER, IEEE Semiconductor Electronics Division National Bureau of Standards Gaithersburg, MD 20899 ABSTRACT-The device-circuit interactions of the power Polyslllcon Metal IGBT MOSFET MOSFET cathode source drain Insulated Gate Bipolar Transistor (IGBT) for a series resistor- IGBT yate inductor load, both with and without a snubber, are simulated. An analytical model for the transient operation of the IGBT, Oxide previously developed, is used in conjunction with the load cir- cuit state equations for the simulations. The simulated results are compared with experimental results for all conditions. De- - 10um - 20pm -; "Bipolar base vices with a variety of base lifetimes are studied. For the fastest I 93pm , \ Epitaxial layer devices studied (base lifetime = 0.3 pa), the voltage overshoot i I of the series resistor-inductor load circuit approaches the device i I voltage rating (500 for load inductances greater than 1 pH. 1 V) t For slower devices, though, the voltage overshoot is much less PA Bipolar' emitter j and a larger inductance can therefore be switched without a Subs t r ale i I snubber circuit (e.g., 80 pH for a 7.1-ps device). In this study, IGBT anode the simulations are used to determine the conditions for which the different devices can be switched safely without a snubber Fig.1. A diagram of two of the many thousand diffused cells protection circuit. Simulations are also used to determine the of an n-channel IGBT. required values and ratings for protection circuit components when protection circuits are necessary.
    [Show full text]
  • MOSFET Gate Drive Circuit Application Note
    MOSFET Gate Drive Circuit Application Note MOSFET Gate Drive Circuit Description This document describes gate drive circuits for power MOSFETs. © 2017 - 2018 1 2018-07-26 Toshiba Electronic Devices & Storage Corporation MOSFET Gate Drive Circuit Application Note Table of Contents Description ............................................................................................................................................ 1 Table of Contents ................................................................................................................................. 2 1. Driving a MOSFET ........................................................................................................................... 3 1.1. Gate drive vs. base drive.................................................................................................................... 3 1.2. MOSFET characteristics ...................................................................................................................... 3 1.2.1. Gate charge ........................................................................................................................................... 4 1.2.2. Calculating MOSFET gate charge ....................................................................................................... 4 1.2.3. Gate charging mechanism ................................................................................................................... 5 1.3. Gate drive power ................................................................................................................................
    [Show full text]
  • Power MOSFET Structure and Characteristics Application Note
    Power MOSFET Structure and Characteristics Application Note Power MOSFET Structure and Characteristics Description This document explains structures and characteristics of power MOSFETs. © 2017 - 20 18 1 2018-07-26 Toshiba Electronic Devices & Storage Corporation Power MOSFET Structure and Characteristics Application Note Table of Contents Description ............................................................................................................................................ 1 Table of Contents ................................................................................................................................. 2 1. Structures and Characteristics ....................................................................................................... 3 1.1. Structures of Power MOSFETs ........................................................................................................... 3 1.2. Characteristics of Power MOSFETs .................................................................................................... 4 RESTRICTIONS ON PRODUCT USE.................................................................................................... 6 © 2017 - 2018 2 2018-07-26 Toshiba Electronic Devices & Storage Corporation Power MOSFET Structure and Characteristics Application Note 1. Structures and Characteristics Since Power MOSFETs operate principally as majority-carrier devices, they are not affected by minority carriers. This is in contrast to the situation with minority-carrier devices such as bipolar
    [Show full text]
  • Power MOSFET Frequently Asked Questions and Answers Rev
    TN00008 Power MOSFET frequently asked questions and answers Rev. 5.0 — 23 June 2020 Technical note Document information Information Content Keywords TrenchMOS generation 3, generation 6, generation 9, avalanche, ruggedness, linear mode, reliability, thermal impedance, EMC, ESD, switching, thermal design Abstract This document provides answers to frequently asked questions regarding automotive MOSFET platforms, devices, functionality and reliability. It is also applicable to non-automotive applications. Nexperia TN00008 Power MOSFET frequently asked questions and answers 1. Introduction This technical note provides several important questions regarding the use of MOSFETs and the platforms required. Although it is focused on automotive applications, the principles can apply to industrial and consumer applications. It strives to provide clear answers to these questions and the reasoning behind the answers. This document is intended for guidance only. Any specific questions from customers should be discussed with Nexperia power MOSFET application engineers. 2. Gate 2.1. Q: Why is the VGS rating of Trench 6 automotive logic level MOSFETs limited to 10 V and can it be increased beyond 10 V? A: The VGS rating of 10 V given to Trench 6 logic level MOSFETs is driven by our <1 ppm failure rate targets and was rated to the best industry practices at the time. The ppm failure figures are not given in any data sheet nor are they part of AEC-Q101 qualification. In other words, two devices can both be qualified to AEC-Q101 and still have different ppm failure rate figures. Methods of defining, characterising and protecting these ratings have improved and there is now a possibility to operate beyond the given rating of 10 V.
    [Show full text]
  • Advancing Silicon Performance Beyond the Capabilities of Discrete
    ISSN: 1863-5598 ZKZ 64717 08-10 Electronics in Motion and Conversion August 2010 COVER STORY Advancing Silicon Performance Beyond the Capabilities of Discrete Power MOSFETs Combining NexFETTM MOSFETs with stacked die techniques significantly reduceds parasitic losses The drive for higher efficiency and increased power in smaller form factors is being addressed by advancements in both silicon and packaging technologies. The NexFETTM Power Block combines these two technologies to achieve higher levels of performance, and in half the space versus discrete MOSFETs. This article explains these new technolo- gies and highlights their performance advantages. By Jeff Sherman, Product Marketing Engineer, and Juan Herbsommer, Senior Member of Technical Staff, Texas Instruments End equipment users from servers to base stations are becoming more concerned about efficiency and power loss as well as their impact on annual operating costs. This means that designers must improve effi- ciency throughout the power conversion process. Traditional approach- es to improve efficiency in DC/DC synchronous buck converters include reducing conduction losses in the MOSFETs through lower RDS(ON) devices and lowering switching losses through low-frequency operation. The incremental improvements in RDS(ON) are at a point of diminishing returns and low RDS(ON) devices have large parasitic capacitances that do not facilitate the high-frequency operation required to improve power density. The NexFET Power Block is designed to leverage the NexFET power MOSFET’s significantly lower gate charge and an innovative stacked die packaging approach to achieve dramatic performance improvements. New Power Silicon The major losses that occur within a MOSFET switch in a typical syn- Figure 1: MOSFET structure comparison chronous buck converter consist of switching, conduction, body diode and gate drive losses.
    [Show full text]
  • Power MOSFET Selecting Mosffets and Consideration for Circuit Design Application Note
    Power MOSFET Selecting MOSFFETs and Consideration for Circuit Design Application Note Power MOSFET Selecting MOSFFETs and Consideration for Circuit Design Description This document explains selecting MOSFETs and what we have to consider for designing MOSFET circuit, such as temperature characteristics, effects of wire inductance, parasitic oscillations, avalanche ruggedness, and snubber circuit. © 2017 - 2018 1 2018-07-26 Toshiba Electronic Devices & Storage Corporation Power MOSFET Selecting MOSFFETs and Consideration for Circuit Design Application Note Table of Contents Description ............................................................................................................................................ 1 Table of Contents ................................................................................................................................. 2 1. Selecting MOSFETs .......................................................................................................................... 3 1.1. Voltage and Current Ratings .............................................................................................................. 3 1.2. Considerations for VGS......................................................................................................................... 3 1.3. Switching Speed .................................................................................................................................. 4 2. Considerations for MOSFET Circuit Design ..................................................................................
    [Show full text]