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6A Single High-Speed, CMOS Power MOSFET Driver

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6A Single High-Speed, CMOS Power MOSFET Driver TC429 6A Single High-Speed, CMOS Power MOSFET Driver Features General Description • High Peak Output Current: 6A The TC429 is a high-speed, single output, CMOS-level • Wide Input Supply Voltage Operating Range: translator and driver. Designed specifically to drive - 7V to 18V highly capacitive power MOSFET gates, the TC429 features a 2.5 output impedance and 6A peak output • High-Impedance CMOS Logic Input current drive. • Logic Input Threshold Independent of Supply Voltage A 2500 pF capacitive load will be driven to 18V in 25 nsec. The rapid switching times with large • Low Supply Current: capacitive loads minimize MOSFET switching power - With Logic ‘1’ Input – 5 mA max. losses. - With Logic ‘0’ Input – 0.5 mA max. A TTL/CMOS input logic level is translated into an • Output Voltage Swing Within 25 mV of Ground output voltage swing that equals the supply voltage and or V DD will swing to within 25 mV of ground or VDD. Input volt- • Short Delay Time: 75 nsec max age swing may equal the supply voltage. Logic input • Available in the Space-Saving 8-Pin SOIC current is under 10 µA, making direct interface to Package. CMOS/bipolar switch-mode power supply controllers • High Capacitive Load Drive Capability: easy. Input “speed-up” capacitors are not required. -tRISE, tFALL = 35 nsec max with The CMOS design minimizes quiescent power supply CLOAD = 2500 pF current. With a logic ‘1’ input, power supply current is 5 mA maximum and decreases to 0.5 mA for logic ‘0’ Applications inputs. • Switch-Mode Power Supplies For dual output MOSFET drivers, see the TC426/ TC427/TC428 (DS21415), TC4426/TC4427/TC4428 • CCD Drivers (DS21422) and TC4426A/TC4427A/TC4428A • Pulse Transformer Drive (DS21423) data sheets. • Class D Switching Amplifiers For non-inverting applications, or applications requiring Package Types latch-up protection, see the TC4420/TC4429 (DS21419) data sheet. CERDIP/PDIP/SOIC VDD 1 8 VDD INPUT 2 7 OUTPUT NC 3 6 OUTPUT GND 4 TC429 5 GND NC = No Internal Connection Note: Duplicate pins must both be connected for proper operation. 2002-2012 Microchip Technology Inc. DS21416D-page 1 TC429 Functional Block Diagram 1,8 VDD 300 mV 6,7 Output 2 Input Effective Input C = 38 pF TC429 4,5 GND DS21416D-page 2 2002-2012 Microchip Technology Inc. TC429 1.0 ELECTRICAL PIN FUNCTION TABLE CHARACTERISTICS Symbol Description Absolute Maximum Ratings † VDD Supply input, 7V to 18V Supply Voltage .....................................................+20V INPUT Control input. TTL/CMOS compatible Input Voltage, Any Terminal logic input ...................................VDD + 0.3V to GND – 0.3V NC No connection Power Dissipation (TA 70°C) GND Ground PDIP ............................................................ 730 mW GND Ground CERDIP....................................................... 800 mW OUTPUT CMOS push-pull, common to pin 7 SOIC............................................................ 470 mW Storage Temperature Range.............. -65°C to +150°C OUTPUT CMOS push-pull, common to pin 6 V Supply input, 7V to 18V Maximum Junction Temperature, TJ ............... +150°C DD † Stresses above those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operation sections of the specifications is not implied. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. DC ELECTRICAL CHARACTERISTICS Electrical Specifications: Unless otherwise noted, TA = +25°C with 7V VDD 18V. Parameters Sym Min Typ Max Units Conditions Input Logic ‘1’, High Input Voltage VIH 2.4 1.8 — V Logic ‘0’, Low Input Voltage VIL —1.30.8V Input Current IIN -10 — 10 µA 0VVINVDD Output High Output Voltage VOH VDD – 0.025 — — V Low Output Voltage VOL ——0.025V Output Resistance RO —1.82.5 VIN = 0.8V, VOUT = 10 mA, VDD = 18V —1.52.5VIN = 2.4V, VOUT = 10 mA, VDD = 18V Peak Output Current IPK —6.0—AVDD = 18V, Figure 4-4 Latch-Up Protection IREV — 0.5 — A Duty cycle2%, t 300 µsec, Withstand Reverse Current VDD = 16V Switching Time (Note 1) Rise Time tR —2335nsecCL = 2500 pF, Figure 4-1 Fall Time tF —2535nsecCL = 2500 pF, Figure 4-1 Delay Time tD1 —5375nsecFigure 4-1 Delay Time tD2 —6075nsecFigure 4-1 Power Supply Power Supply Current IS —3.55.0mAVIN = 3V —0.30.5VIN = 0V Note 1: Switching times ensured by design. 2002-2012 Microchip Technology Inc. DS21416D-page 3 TC429 DC ELECTRICAL CHARACTERISTICS (CONTINUED) Electrical Specifications: Unless otherwise noted, over operating temperature range with 7V VDD 18V. Parameters Sym Min Typ Max Units Conditions Input Logic ‘1’, High Input Voltage VIH 2.4 — — V Logic ‘0’, Low Input Voltage VIL ——0.8V Input Current IIN -10 — 10 µA 0VVINVDD Output High Output Voltage VOH VDD – 0.025 — — V Low Output Voltage VOL ——0.025V Output Resistance RO ——5.0 VIN = 0.8V, VOUT = 10 mA, VDD = 18V ——5.0VIN = 2.4V, VOUT = 10 mA, VDD = 18V Switching Time (Note 1) Rise Time tR — — 70 nsec CL = 2500 pF, Figure 4-1 Fall Time tF — — 70 nsec CL = 2500 pF, Figure 4-1 Delay Time tD1 — — 100 nsec Figure 4-1 Delay Time tD2 — — 120 nsec Figure 4-1 Power Supply Power Supply Current IS ——12mAVIN = 3V ——1.0VIN = 0V Note 1: Switching times ensured by design. TEMPERATURE CHARACTERISTICS Electrical Specifications: Unless otherwise noted, TA = +25°C with 7V VDD 18V. Parameters Sym Min Typ Max Units Conditions Temperature Ranges Specified Temperature Range (C) TA 0—+70ºC Specified Temperature Range (E) TA -40 — +85 ºC Specified Temperature Range (M) TA -55 — +125 ºC Maximum Junction Temperature TJ — — +150 ºC Storage Temperature Range TA -65 — +150 ºC Package Thermal Resistances Thermal Resistance, 8L-CERDIP JA —150—ºC/W Thermal Resistance, 8L-PDIP JA —125—ºC/W Thermal Resistance, 8L-SOIC JA —155—ºC/W DS21416D-page 4 2002-2012 Microchip Technology Inc. TC429 2.0 TYPICAL PERFORMANCE CURVES Note: The graphs and tables provided following this note are a statistical summary based on a limited number of samples and are provided for informational purposes only. The performance characteristics listed herein are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified operating range (e.g., outside specified power supply range) and therefore outside the warranted range. Note: Unless otherwise indicated, TA = +25°C with 7V VDD 18V. 60 70 ° TA = +25 C TA = +25°C CL = 2500 pF 60 VDD = +15V 50 50 40 40 30 30 TIME (nsec) 400 kHz tF 20 200 kHz 20 tR SUPPLY CURRENT (mA) 10 20 kHz 10 0 5101520 10 100 1K 10K SUPPLY VOLTAGE (V) CAPACITIVE LOAD (pF) FIGURE 2-1: Rise/Fall Times vs. Supply FIGURE 2-4: Supply Current vs. Voltage. Capacitive Load. 60 90 CL = 2500 pF CL = 2500 pF VDD = +15V VDD = +15V 50 80 40 70 tF tD2 30 60 TIME (nsec) tR DELAY TIME (nsec) t 20 50 D1 10 40 -50 -25075 25 50 100 125 150 -50 -25075 25 50 100 125 150 TEMPERATURE (°C) TEMPERATURE (°C) FIGURE 2-2: Rise/Fall Times vs. FIGURE 2-5: Delay Times vs. Temperature. Temperature. 100 140 ° TA = +25°C TA = +25 C VDD = +15V CL = 2500 pF 120 tF 100 tR 10 80 TIME (nsec) DELAY TIME (nsec) tD2 60 tD1 1 40 100 1K 10K 5 10 15 20 CAPACITIVE LOAD (pF) SUPPLY VOLTAGE (V) FIGURE 2-3: Rise/Fall Times vs. FIGURE 2-6: Delay Times vs. Supply Capacitive Load. Voltage. 2002-2012 Microchip Technology Inc. DS21416D-page 5 TC429 Note: Unless otherwise indicated, TA = +25°C with 7V VDD 18V. 50 20 T = +25°C TA = +25°C A CL = 2500 pF HYSTERESIS 10V ≈ 40 310 mV 15 15V 30 300 mV 10 VDD = 18V 20 200 mV 5 OUTPUT VOLTAGE (V) SUPPLY CURRENT (mA) 10 5V 0 1 10 100 1K 0 0.25 0.50 0.75 11.25 1.50 1.75 2 FREQUENCY (kHz) INPUT VOLTAGE (V) FIGURE 2-7: Supply Current vs. FIGURE 2-10: Voltage Transfer Frequency. Characterstics. 4 400 ° TA = +25°C TA = +25 C RL = ∞ INPUT LOGIC "1" 300 VDD = 5V 2 200 10V 15V 18V 100 OUTPUT VOLTAGE (mV) SUPPLY CURRENT (mA) 048121620 0 20 40 60 80 100 SUPPLY VOLTAGE (V) SOURCE CURRENT (mA) FIGURE 2-8: Supply Current vs. Supply FIGURE 2-11: High Output Voltage Voltage. (VDD-VOH) vs. Output Source Current. 400 VDD = +18°C T = +25°C 4 A RL = ∞ INPUT LOGIC "1" 300 VDD = 5V 200 3 10V 15V 100 SUPPLY CURRENT (mA) OUTPUT VOLTAGE (mV) 18V 2 -75-50 -25 0 25 50 75 100 125 150 0 20 40 60 80 100 ° TEMPERATURE ( C) SINK CURRENT (mA) FIGURE 2-9: Supply Current vs. FIGURE 2-12: Low Output Voltage vs. Temperature. Output Sink Current. DS21416D-page 6 2002-2012 Microchip Technology Inc. TC429 3.0 PIN DESCRIPTIONS The descriptions of the pins are listed in Table 3-1. TABLE 3-1: PIN FUNCTION TABLE Pin No. Symbol Description 1VDD Supply input, 7V to 18V 2 INPUT Control input. TTL/CMOS compatible logic input 3 NC No connection 4 GND Ground 5 GND Ground 6OUTPUTCMOS push-pull output, common to pin 7 7OUTPUTCMOS push-pull output, common to pin 6 8VDD Supply input, 7V to 18V 3.1 Supply Input (VDD) 3.3 CMOS Push-Pull Output (OUTPUT) The VDD input is the bias supply for the MOSFET driver and is rated for 7.0V to 18V with respect to the ground The MOSFET driver output is a low-impedance, CMOS pin. The VDD input should be bypassed to ground with push-pull style output, capable of driving a capacitive a local ceramic capacitor.
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