Integrated Circuits Introduction
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High Performance Power Distribution Networks with On-Chip Decoupling Capacitors for Nanoscale Integrated Circuits
High Performance Power Distribution Networks with On-Chip Decoupling Capacitors for Nanoscale Integrated Circuits by Mikhail Popovich Submitted in Partial Ful¯llment of the Requirements for the Degree Doctor of Philosophy Supervised by Professor Eby G. Friedman Department of Electrical and Computer Engineering The College School of Engineering and Applied Sciences University of Rochester Rochester, New York 2007 ii It has become appallingly obvious that our technology has exceeded our humanity. | Albert Einstein iii Dedication This work is dedicated to my parents, Mr. Evgeniy Antonovich and Mrs. Lyud- mila Mikhailovna, my wife Oksana, and my daughter Elizabeth Michelle. iv Curriculum Vitae Mikhail Popovich was born in Izhevsk, Russia in 1975. He received the B.S. degree in electrical engineering from Izhevsk State Technical University, Izhevsk, Russia in 1998, and the M.S. degree in electrical and computer engineering from the University of Rochester, Rochester, NY in 2002, where he is completing the Ph.D. degree in electrical engineering. He was an intern at Freescale Semiconductor Corporation, Tempe, AZ, in the summer 2005, where he worked on signal integrity in RF and mixed-signal ICs and developed design techniques and methodologies for placing distributed on-chip de- coupling capacitors. His professional experience also includes characterization of sub- strate and interconnect crosstalk noise in CMOS imaging circuits for the Eastman Kodak Company, Rochester, NY. He has authored a book and several conference and journal papers in the areas of power distribution networks in CMOS VLSI circuits, placement of on-chip decoupling capacitors, and the inductive properties of on-chip v interconnect. His research interests are in the areas of on-chip noise, signal integrity, and interconnect design including on-chip inductive e®ects, optimization of power distribution networks, and the design of on-chip decoupling capacitors. -
Introduction to the Course. in This Lecture I Would Try to Set the Course in Perspective
Introduction to the course. In this lecture I would try to set the course in perspective. Before we embark on learning something, it is good to ponder why it would be interesting, besides the fact that it can fetch useful course credits. What do you understand by VLSI? In retrospect, integrated circuits having 10s of devices were called small scale integrated circuits (SSI), a few hundreds were called medium scale few thousands large scale. The game stopped with VLSI as people lost the count (not really). What does the word VLSI bring to your mind? Discussion to follow. What do you understand by technology? Discussion to follow. Technology is the application of scientific knowledge for practical purposes. For example, why you may not call VLSI circuit design as VLSI technology? This is by convention in the semiconductor business research and business community. The convention is to treat fabrication technology as the “technology”. In this course we would discuss and try to learn how Silicon Integrated Circuits are fabricated. Integrated circuits are fabricated by a sequence of fabrication steps called unit processes. A unit process would add to or subtract from a substrate. Examples of unit processes can be cleaning of a wafer, deposition of a thin film of a material and so on. The unit processes are not uniquely applied to VLSI fabrication only. I can combine several of these unit processes to make solar cells. I can do same for making MEMS devices. So the unit processes can be thought of as pieces in a jigsaw puzzles. The outcome would depend on how you sequence the unit processes. -
MOSFET - Wikipedia, the Free Encyclopedia
MOSFET - Wikipedia, the free encyclopedia http://en.wikipedia.org/wiki/MOSFET MOSFET From Wikipedia, the free encyclopedia The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET), is by far the most common field-effect transistor in both digital and analog circuits. The MOSFET is composed of a channel of n-type or p-type semiconductor material (see article on semiconductor devices), and is accordingly called an NMOSFET or a PMOSFET (also commonly nMOSFET, pMOSFET, NMOS FET, PMOS FET, nMOS FET, pMOS FET). The 'metal' in the name (for transistors upto the 65 nanometer technology node) is an anachronism from early chips in which the gates were metal; They use polysilicon gates. IGFET is a related, more general term meaning insulated-gate field-effect transistor, and is almost synonymous with "MOSFET", though it can refer to FETs with a gate insulator that is not oxide. Some prefer to use "IGFET" when referring to devices with polysilicon gates, but most still call them MOSFETs. With the new generation of high-k technology that Intel and IBM have announced [1] (http://www.intel.com/technology/silicon/45nm_technology.htm) , metal gates in conjunction with the a high-k dielectric material replacing the silicon dioxide are making a comeback replacing the polysilicon. Usually the semiconductor of choice is silicon, but some chip manufacturers, most notably IBM, have begun to use a mixture of silicon and germanium (SiGe) in MOSFET channels. Unfortunately, many semiconductors with better electrical properties than silicon, such as gallium arsenide, do not form good gate oxides and thus are not suitable for MOSFETs. -
Nanoscale Transistors Fall 2006 Mark Lundstrom Electrical
SURF Research Talk, June 16, 2015 Along for the Ride – reflections on the past, present, and future of nanoelectronics Mark Lundstrom [email protected] Electrical and Computer Engineering Birck Nanotechnology Center Purdue University, West Lafayette, Indiana USA Lundstrom June 2015 what nanotransistors have enabled “If someone from the 1950’s suddenly appeared today, what would be the most difficult thing to explain to them about today?” “I possess a device in my pocket that is capable of assessing the entirety of information known to humankind.” “I use it to look at pictures of cats and get into arguments with strangers.” Curious, by Ian Leslie, 2014. transistors The basic components of electronic systems. >100 billion transistors Lundstrom June 2015 transistors "The transistor was probably the most important invention of the 20th Century, and the story behind the invention is one of clashing egos and top secret research.” -- Ira Flatow, Transistorized! http://www.pbs.org/transistor/ Lundstrom June 2015 “The most important moment since mankind emerged as a life form.” Isaac Asimov (speaking about the “planar process” used to manufacture ICs - - invented by Jean Hoerni, Fairchild Semiconductor, 1959). IEEE Spectrum Dec. 2007 Lundstrom June 2015 Integrated circuits "In 1957, decades before Steve Jobs dreamed up Apple or Mark Zuckerberg created Facebook, a group of eight brilliant young men defected from the Shockley Semiconductor Company in order to start their own transistor business…” Silicon Valley: http://www.pbs.org/wgbh/americanexperience/films/silicon/ -
Intuitive Analog Circuit Design
Chapter 1 Introduction MTThMarc T. Thompson, PhDPh.D. Thompson Consulting, Inc. 9 Jacob Gates Road Harvard, MA 01451 Phone: (978) 456-7722 Fax: (240) 414-2655 Email: [email protected] Web: http://www.thompsonrd.com Slides to accomppyany Intuitive Analoggg Circuit Design byyp Marc T. Thompson © 2006-2008, M. Thompson Analog Design is Not Dead • The world is analog •…(well, until we talk about Schrodinger) Introduction 2 Partial Shopping List of Analog Design • Analogg,,p filters: Discrete or ladder filters, active filters, switched capacitor filters. • Audio amplifiers: Power op-amps, output (speaker driver) stages • Oscillators: Oscillators, phase-locked loops, video demodulation • Device fabrication and device physics: MOSFETS, bipolar transistors, diodes, IGBTs,,,, SCRs, MCTs, etc. • IC fabrication: Operational amplifiers, comparators, voltage references, PLLs, etc • Analog to digital interface: A/D and D/A, voltage references • Radio frequency circuits: RF amplifiers, filters, mixers and transmission lines; cable TV • Controls: Control system design and compensation, servomechanisms, speed controls • Power electronics: This field requires knowledge of MOSFET drivers, control syyg,y,stem design, PC board layout, and thermal and magg;netic issues; motor drivers; device fabrication of transistors, MOSFETs (metal oxide semiconductor field effect transistors), IGBTs (insulated gate bipolar transistors), SCRs (silicon- controlled rectifiers) • Medical electronics: instrumentation (EKG, NMR), defibrillators, implanted medical devices • Simulation: SPICE and other circuit simulators • PC board layout: This requires knowledge of inductance and capacitive effects, grounding, shielding and PC board design rules. Introduction 3 Lilienfeld Patent (c. 1930) 4 Introduction 1st Bipolar Transistor (c. 1948) • Point contact transistor , demonstrated December 23, 1947 at Bell Labs (Shockley, Bardeen and Brattain) Reference: Probir K. -
Transistors to Integrated Circuits
resistanc collectod ean r capacit foune yar o t d commercial silicon controlled rectifier, today's necessarye b relative .Th e advantage lineaf so r thyristor. This later wor alss kowa r baseou n do and circular structures are considered both for 1956 research [19]. base resistanc r collectofo d an er capacity. Parameters, which are expected to affect the In the process of diffusing the p-type substrate frequency behavior considerede ar , , including wafer into an n-p-n configuration for the first emitter depletion layer capacity, collector stage of p-n-p-n construction, particularly in the depletion layer capacit diffusiod yan n transit redistribution "drive-in" e donophasth f ro e time. Finall parametere yth s which mighe b t diffusion at higher temperature in a dry gas obtainabl comparee ear d with those needer dfo ambient (typically > 1100°C in H2), Frosch a few typical switching applications." would seriously damag r waferseou wafee Th . r surface woul e erodedb pittedd an d r eveo , n The Planar Process totally destroyed. Every time this happenee dth s e apparenlosexpressiowa th s y b tn o n The development of oxide masking by Frosch Frosch' smentiono t face t no , ourn o , s (N.H.). and Derick [9,10] on silicon deserves special We would make some adjustments, get more attention inasmuch as they anticipated planar, oxide- silicon wafers ready, and try again. protected device processing. Silicon is the key ingredien oxids MOSFEr it fo d ey an tpave wa Te dth In the early Spring of 1955, Frosch commented integrated electronics [22]. -
Copyrighted Material
pter O ha n C e An Historic Overview of Venture Capitalism • Those who cannot remember the past are condemned to repeat it. —George Santayana Why is an historical overview of VC important? Because history does in fact repeat itself, and a study of history allows us to frame an understanding of the present and the future. The playersCOPYRIGHTED and the investment climate MATERIAL change, but the entrepreneur’s innate instinct to risk capital for a return is no different today from what it was when John D. Rockefeller became America’s first billionaire in 1900. When Andrew c01.indd 1 10-12-2013 8:50:11 [2] The Little Book of Venture Capital Investing Carnegie joined forces with his childhood friend, Henry Phipps, to form Carnegie Steel in 1892, they were driven by the same conviction to improve the status quo as are the idealistic dream chasers of the twenty-first century. It was these early trailblazers who paved the way and developed the techniques that have laid the foundation for VC as we know it today. Arguably, historians will debate the nature of history and its usefulness. This includes using the discipline as a way of providing perspective on the problems and opportu- nities of the present. I believe it to be an important tool in providing a systematic account and window to the future. It is patently dishonest and irresponsible to perpetuate the popular mythology that those who created great wealth in America are to be despised and that there are no useful les- sons to be learned from an objective, historical review of their contributions to the subject at hand. -
Planar Process with Noyce’S Interconnection Via a Diffused Layer of Metal Conductors
Future Horizons Ltd Blakes Green Cottage TN15 0LQ, UK Tel: +44 1732 740440 Fax: +44 1732 608045 [email protected] www.futurehorizons.com Research Brief: 2019/01 – The Planar IC Process The Planar IC Process On 1 December 1957, Jean Hoerni, a Swiss physicist and Fairchild Semiconductor co-founder, recorded in his patent notebook an entry called "A method of protecting exposed p-n junctions at the surface of silicon transistors by oxide masking techniques." This was the first formal documentation of the planar semiconductor process, a radically new transistor design in which the oxide layer was left in place on the silicon wafer to protect the sensitive p-n junctions underneath. Focused on getting its first semiconductor devices into production, Fairchild did not pursue Hoerni’s planar approach at that time and it was not until 14 January 1959 that Hoerni finally wrote up his disclosure for what would become U.S. Patent 3025589. One week later, on 23 January 1959, Robert (Bob) Noyce, a fellow Fairchild co-founder, wrote up a disclosure for the planar IC. Fairchild’s first working planar IC was built some 16 months later in May 1960. Sixty years on, this technology remains the basis for virtually all semiconductor manufacturing today. The Early Days By the late 1950s, even though barely a decade old, transistors had already gone through several stages of development, including the material transition from germanium to silicon and the move from piece by piece to batch manufacturing through a simple photolithographic and Page 1 of 8 © Future Horizons 1989-2019, Reproduction Prohibited - All Rights Reserved The Planar IC Process The Global Semiconductor Industry Analysts Research Brief: 2019/01 etching technique known as the Mesa process. -
Oral History of Jay Last
Oral History of Jay Last Interviewed by: Craig Addison Recorded: September 15, 2007 Beverly Hills, California CHM Reference number: X4158.2008 © 2007 Computer History Museum Oral History of Jay Last Craig Addison: Jay, could you start off by talking about where you were brought up and your education experience? Jay Last: Sure, I was born in Western Pennsylvania and went to school there in a small steel mill town. My father worked in the steel mill there and I was born in 1929 -- the week the stock market crashed -- and so in my first decade steel was a pretty tough industry to be involved with from my father’s point-of- view. So my first 10 years were the Depression and after that there was five years of war so by the time I was 15 I realized I had seen nothing but depressions and wars. I got a good high school education in this small town and then went to the University of Rochester and got a Bachelor’s degree in optics and had a very heavy physics training there also which gave me the background, then, to go on to MIT and get a doctorate in solid state physics. Solid state physics was a relatively new field then. All of the technical developments from the 1930s and the things happening in the war just had this vast amount of physical phenomenon that were available for use in various commercial products and improving whatever we were doing. So my timing was just perfect. I got an education in solid state physics…so I knew the background of the transistor field. -
CSET Issue Brief
SEPTEMBER 2020 The Chipmakers U.S. Strengths and Priorities for the High-End Semiconductor Workforce CSET Issue Brief AUTHORS Will Hunt Remco Zwetsloot Table of Contents Executive Summary ............................................................................................... 3 Key Findings ...................................................................................................... 3 Workforce Policy Recommendations .............................................................. 5 Introduction ........................................................................................................... 7 Why Talent Matters and the American Talent Advantage .............................. 10 Mapping the U.S. Semiconductor Workforce .................................................. 12 Identifying and Analyzing the Semiconductor Workforce .......................... 12 A Large and International Workforce ........................................................... 14 The University Talent Pipeline ........................................................................ 16 Talent Across the Semiconductor Supply Chain .......................................... 21 Chip Design ................................................................................................ 23 Electronic Design Automation ................................................................... 24 Fabrication .................................................................................................. 24 Semiconductor Manufacturing Equipment (SME) Suppliers -
"Studies of Double-Diffused Transistor Structures" A
"STUDIES OF DOUBLE-DIFFUSED TRANSISTOR STRUCTURES" A THESIS presented for the degree of DOCTOR OF PHILOSOPHY of the UNIVERSITY OF LONDON by RAYE EDWARD THOMAS June 1966 2. ABSTRACT The solid-state diffusion process is examined with particular reference to the idealized classical impurity distributions normally assumed to apply in diffused structures. The peculiar properties of the double-diffused structure (graded junctions and a maximum in base doping) are shown to effect an overall improvement in frequency per- formance. Methods used to derive information on the impurity profile both in large area devices (destructive techniques) and in small area devices (physical model derived from terminal measurements) are discussed. Early models are shown to be inadequate and strictly limited in applicability. A physical model (double exponential) is proposed to apply generally to double-diffused transistors. A detailed study of classical distributions establishes that the assumed model not only is a good representation of such distributions in the base region, but also accurately predicts depletion layer and base transport properties. The proper interpretation of terminal measurements allows the constants of the model to be successfully determined for actual transistors. Within the accuracy of the above-mentioned measurements, the derived model is concluded to be a good representation for actual devices. In conclusion, suggestions for further work are offered. 3. ACKNOWLEDGBENTS The author wishes to express his gratitude to his Supervisor, Professor A.R. Boothroyd of The Queen's University of Belfast, (formerly of Imperial College) for his support, guidance and encourangement during the course of the work described in this thesis. Grateful thanks are extended to his fellow research students for friendly and stimulating discussions, in particular, to Viphandh Roengpithya for additional assistance in the reproduction stage of the thesis. -
The Legacy of Bob Noyce
The Legacy of Bob Noyce This February, a new documentary about the rise of Silicon Valley and the story of Bob Noyce will air on the Public Broadcasting System’s American Experience, the most-watched history series on American television. As the filmmakers put it, the radical innovations of the brilliant, charismatic young physicist Noyce included the integrated circuit, which transformed the way the world works, plays, and communicates, and has made possible everything from space exploration to smart phones, pacemakers to microwaves. In other words, all of modern electronics and, directly or indirectly, most of modern technology. A quote from Bob guards the entrance to the Robert Noyce Building: “Innovation is everything.” Hasn’t innovation moved on to someplace else? Like consumer electronics, e-readers, phones, tablets – all the cool gadgets in the Top Ten Black Friday Most Popular Items list? You could be forgiven for having missed it, or for thinking it didn’t matter much: Recently the IEEE named two retired Intel technologists, Sunlin Chou and Youssef El-Mansy, the next winners of its Robert N. Noyce Medal. All Chou and El-Mansy did was this: Establish a research-development manufacturing methodology that led to industry leadership in logic technology for advanced microprocessor products. And that led to strained silicon at 90 nanometers, high-k and metal gate at 45nm, and tri-gate transistors at 22nm. Along the way, organizational innovations from Chou and El-Mansy included Copy Exactly, a focus on defect reduction, increased work-in- process turns, and more. Andy Grove, in an email to them, wrote: “Bob Noyce, who knew a thing or two about exceptional contributions, would be even more emphatic in congratulating you.