FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB Annual Report 2015 ANNUAL REPORT Fraunhofer Institute for Integrated Systems and Device Technology IISB Fraunhofer Institute for Integrated Systems and Device Technology 2015 Imprint Published by: Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB Schottkystrasse 10 91058 Erlangen, Germany Editors: Thomas Richter Lothar Frey Layout and Setting: Thomas Richter Angela Straub Helen Kühn Jana Köppen Mariya Hristova Printed by: Frank UG Grafik – Druck – Werbung, Höchstadt Cover Photo: Active power cycling test of silicon carbide devices at high temperature and overcurrent. © Fraunhofer IISB © Fraunhofer IISB, Erlangen 2016 All rights reserved. Reproduction only with express written authorization. ACHIEVEMENTS AND RESULTS ANNUAL REPORT 2015 FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB Director: Prof. Dr. rer. nat. Lothar Frey Schottkystrasse 10 91058 Erlangen, Germany Phone: +49 (0) 9131 761-0 Fax: +49 (0) 9131 761-390 E-Mail:
[email protected] Web: www.iisb.fraunhofer.de PREFACE 1 Looking back to a successful past and great steps towards the future: these 1 Prof. Dr. rer. nat. Lothar Frey, items characterized the work of Fraunhofer IISB in 2015. The institute cele- director of Fraunhofer IISB. brated its 30th anniversary and started the “Leistungszentrum Elektroniksys- © M. Heyde / Fraunhofer teme”, which gives us a prospect to extend our research on electronic systems. Founded in 1985, the Fraunhofer IISB carries out R&D in the fields of semiconductors and pow- er electronics. The institute’s work covers the entire value chain for electronic systems from basic materials to power electronic application, with particular focus on electric mobility and energy supply.