FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB
Content Annual Report 2014
ANNUAL REPORT
Fraunhofer Institute for Integrated Systems and Device Technology IISB Fraunhofer Institute for Integrated Systems and Device Technology 2014 Content
Imprint
Published by: Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB Schottkystrasse 10 91058 Erlangen, Germany
Editors: Thomas Richter Lothar Frey
Layout and Setting: Thomas Richter Mariya Hristova Jana Köppen Helen Kühn
Printed by: Frank UG Grafik – Druck – Werbung, Höchstadt
Cover Photo: Monolithically integrated RC snubber for power electronic applications sintered on direct copper bond and bonded to adjacent pad.
© Fraunhofer IISB, Erlangen 2015 All rights reserved. Reproduction only with express written authorization. ACHIEVEMENTS AND RESULTS ANNUAL REPORT 2014
Content
FRAUNHOFER INSTITUTE FOR INTEGRATED SYSTEMS AND DEVICE TECHNOLOGY IISB
Director: Prof. Dr. rer. nat. Lothar Frey
Schottkystrasse 10 91058 Erlangen, Germany
Phone: +49 (0) 9131 761-0 Fax: +49 (0) 9131 761-390 E-Mail: [email protected] Web: www.iisb.fraunhofer.de PREFACE
1 Content
In 2014, semiconductor materials, devices, and electronic systems for energy 1 Prof. Dr. rer. nat. Lothar Frey, supply kept characterizing the research work of Fraunhofer IISB. Appropriately, director of Fraunhofer IISB. the institute started a close collaboration within the Campus “Future Energy © M. Heyde / Fraunhofer Systems” initiated by Siemens. Together with Fraunhofer IIS and the University of Erlangen-Nuremberg, we prepared the new “Leistungszentrum Elektronik- systeme”, which was finally launched in January 2015.
Moreover, our energy research project SEEDs, which aims for a sustainable energy infrastructure under the special boundary conditions of medium-sized industrial environments, has been suc- cessfully continued. The results of SEEDs and other Bavarian energy research projects were pre- sented at our Energy Technology Symposium in October under attendance of the Bavarian State Minister of Economic Affairs and Media, Energy and Technology, Ilse Aigner.
Our research activities on local DC grids for efficient energy supply have been significantly ex- tended and have drawn considerable attention. In this area, IISB develops innovative compo- nents, such as DC grid managers, switch modules for lighting applications, DC connector sys- tems, or DC fast charging solutions for electric vehicles.
In the field of power converters for energy technology and electromobility, one of the special competencies of IISB, new benchmarks were set, e.g., by the development of a 200 kW DC/DC converter with a power density of more than 140 kW/l, which was introduced at PCIM Europe in Nuremberg in May.
But also for the steps prior to system integration, IISB offers high-class R D. Our -Fab service offer for prototype fabrication of electron devices and process development in silicon and sili- con carbide technologies has been further expanded. Our branch lab in Freiberg, the Technol- ogy Center for Semiconductor Materials THM, was successfully evaluated in a Fraunhofer audi- tion procedure.
Fraunhofer IISB has increased its annual budget to well above 20 million Euros with a staff of 230. I would like to take this opportunity to thank all my colleagues at IISB for their successful work in the past year. I extend my gratitude to our partners at the Friedrich-Alexander-Universität of Erlangen-Nuremberg (FAU) and in industry. I also thank our funding authorities, especially the Bavarian Ministry of Economic Affairs and Media, Energy and Technology, and the German Fed- eral Ministry of Education and Research (BMBF) for their support.
Prof. Dr. Lothar Frey Erlangen, April 2015
2 3 CONTENT
FRAUNHOFER IISB AT A GLANCE NAMES AND DATA Profile ...... 7 Guest Scientists ...... 92 History...... 7 Patents ...... 92 Research Areas and Organization...... 9 Participation in Committees ...... 93 Locations ...... 11 Conferences, Workshops, Fairs, and Exhibitions ...... 97 Network and Partners ...... 12 Chair of Electron Devices (LEB), University of Erlangen-Nuremberg ...... 13 SCIENTIFIC PUBLICATIONS Staff Development, Investments, and Budget ...... 16 Publications ...... 100 Advisory Board (December 2014) ...... 18 Presentations ...... 116 Fraunhofer IISB Contact Information ...... 19 PhD Theses ...... 135 Diploma and Master Theses ...... 136 FRAUNHOFER-GESELLSCHAFT Bachelor Theses ...... 138 The Fraunhofer-Gesellschaft...... 21
SIMULATION ...... 22 Pushing SiC MOSFETs to Their Limits and Beyond...... 24 MATERIALS ...... 28 Improved Quality Control of Silicon Carbide Wafers ...... 32 TECHNOLOGY AND MANUFACTURING ...... 36 -Fab: Customized Prototype Fabrication and Device-related Services...... 39 Measurement for Microchips – Precise to a Hair ...... 32 DEVICES AND RELIABILITY ...... 48 Increasing Lifetime at High Temperature...... 50 ENERGY ELECTRONICS ...... 60 Smart Battery Systems ...... 63 ENERGY TECHNOLOGIES – Project SEEDs ...... 68
EVENTS Fraunhofer IISB Shows New Developments at PCIM Europe 2014 in Nuremberg...... 75 Electric Cars Run Smoothly – Innovation Price for Microelectronics ...... 77 Energy Technology in Transformation – Bavarian Research Projects Give Impetus ...... 79 Bavarian Joint Research on E-Mobility – FORELMO Presented Itself at CoFAT 2014 ...... 58 DRIVE-E Study Prizes Awarded – Scientific work on the Electric Drive Train ...... 82 Orientation Guide to Solar Cells – Award-winning Research on Multicrystalline Silicon ...... 84 Electronics for Energy Supply – Strategic Cooperation between Siemens and IISB...... 87 Fraunhofer Results Press Conference 2014 with Examples from Power Electronics ...... 89 BMBF State Secretary Stefan Müller Learns about Electronic Systems ...... 91
4 5 FRAUNHOFER IISB AT A GLANCE
Content
Profi e 1 Building of Fraunhofer IISB in Erlangen with test center for The Fraunhofer Institute for Integrated Systems and Device Technology IISB conducts applied re- electric vehicles and clean- search and development in the field of electronic systems for application in, e.g., electric vehicles room; behind: cleanroom or energy technology. In this connection, the IISB extensively covers the complete value chain laboratory and building of from basic materials to entire power electronic systems. With its two business areas, semicon- the Chair of Electron Devices ductors and power electronics, the institute provides innovation and solutions in materials devel- of the University of Erlangen- opment, semiconductor technology and manufacturing, devices and modules, as well as in sys- Nuremberg. tem development for vehicle power electronics, energy electronics, and energy infrastructures. © K. Fuchs / Fraunhofer IISB This is supplemented by broad activities in reliability, simulation, characterization, and metrology.
The headquarters of the IISB is located in Erlangen, Germany. The institute has two branches in Nuremberg and one in Freiberg. As one of the 66 institutes of the Fraunhofer-Gesellschaft, the IISB does contract research for industry and public authorities. Moreover, it closely cooperates with the University of Erlangen-Nuremberg. The IISB has about 230 employees plus numerous students working as research assistants. The institute is equipped with high-class laboratories, such as a test center for electric cars and an application center for DC grid technology. Together with the University, it operates 1500 m2 of cleanroom area for semiconductor technology on sili- con and silicon carbide.
The IISB is a close partner of national and international industry. Its main objective is to provide excellent research to its customers and to set technological benchmarks as one of the leading research institutions in electronic systems. Cooperation includes research and development proj- ects, prototyping, consultancy, licensing, and studies.
History
The Fraunhofer Institute for Integrated Systems and Device Technology IISB in Erlangen is an im- portant center of applied R&D for electronic systems, power electronics, semiconductor technol- ogy, and materials development in the Nuremberg metropolitan region, Germany and Europe. It was founded in 1985 as the Electron Devices department AIS-B of the Fraunhofer Working Group for Integrated Circuits. In 1993, it became a Fraunhofer institute (IIS-B), but was still for- mally linked to its sibling institute IIS-A, today’s Fraunhofer Institute for Integrated Circuits IIS. In 2003, IIS and IISB became completely independent from each other as two individual Fraunhofer institutes. From 1985 until his retirement in 2008, Prof. Heiner Ryssel was the head of the IISB. Since 2008 Prof. Lothar Frey has been director of the institute. From the beginning, the institute has been closely cooperating with the University of Erlangen-Nuremberg.
6 7
1 FRAUNHOFER IISB AT A GLANCE
Content
Researc Areas and r anization 1 Organization of Fraunhofer IISB 2014: The R&D activities Materials of the IISB cover the comple- te value chain for electronic Together with its industrial partners, Fraunhofer IISB develops equipment and processes for the systems, from basic materials production of crystalline bulk and layer materials for electronics. This comprises silicon, wide- to devices and modules up band-gap semiconductors (e.g., silicon carbide, gallium nitride), materials for optical applications, to application, with power detectors, and energy technology. electronics as a continuous backbone of the institute. Technology & Manufacturing This is mirrored in the new organizational structure of The IISB operates extensive semiconductor technology lines, cleanroom infrastructure, and me- the IISB, which was introdu- trology on silicon and silicon carbide for the development of custom-tailored processes and pro- ced at the beginning of 2014. totype devices in power electronics and microelectronics. Furthermore, the IISB works on nano- © Fraunhofer IISB techni ues, particle and thin-film systems. Manufacturing aspects such as process and uality control, e uipment optimization, automation, and efficiency are also considered.
Simulation
The research activities of the IISB and its customers are supported by extensive competencies in simulation, modeling, and software development in the fields of, e.g., process and device simu- lation in semiconductor technology, crystal growth simulation, or thermal simulation for design- ing power electronic systems.
Devices
The institute develops customer-specific active and passive electron devices on silicon and silicon carbide for application in power electronics, microelectronics, and sensors. This includes novel device concepts and the development of cost-efficient processes tailored towards implementa- tion and realization of customized products.
Packaging & Reliability
New methods and materials for packaging, cooling, lifetime and failure analysis, and reliability play an important role. At the IISB, packaging and reliability research are closely combined with each other. By analyzing the exact failure mechanisms after lifetime and reliability tests, the join- ing technologies, materials, concepts and mechanical designs are further improved. On the other hand, new packaging designs have a direct impact on the test methodologies and accelerating factors.
8 9
1 FRAUNHOFER IISB AT A GLANCE
Content
Vehicle Electronics 1 In addition to its headquar- ters in Erlangen, Fraunhofer Efficient, compact, and robust power electronic systems for all kind of vehicles are in the focus of IISB has two branch labs in the IISB. This comprises electric drives, battery systems, and the charging infrastructure of electric Nuremberg and one in Frei- cars. Benchmark values for energy efficiency and power density are regularly set for the work of berg, as well as a laboratory the IISB. Further fields of application are shipping and aviation. for industrial power electro- nics in Chemnitz. Energy Electronics © Fraunhofer
Power electronic systems are indispensable for realizing a modern energy supply and the transi- tion to predominantly regenerative energy sources. The developments of the IISB contribute to this on all levels of the power grid through, e.g., electronic components for HV DC transport, lo- cal DC micro grids or the integration of electrical storages and regenerative sources in the power grid.
Energy Infrastructure Technologies
The goal of this field of activity is the coupling of electric and non-electric energy and the devel- opment of the necessary interfaces for implementing a sustainable energy infrastructure, espe- cially for industry-size environments.
Freiberg
Chemnitz ocations
Headquarters of Fraunhofer IISB Erlangen Schottkystrasse 10, 91058 Erlangen
Erlangen The headquarters of Fraunhofer IISB in Erlangen are located close to the University of Erlangen- Nuremberg-EnCN Nuremberg. About 7000 m2 of laboratories and office area allow research and development on Nuremberg-South a broad range of power electronics, semiconductor technology, and materials development. A test center for electric cars and extensive cleanroom area for semiconductor technology on sili- con and silicon carbide, which is partly operated together with the Chair of Electron Devices of the University, are part of the available infrastructure.
Fraunhofer IISB Nuremberg-South Landgrabenstrasse 94, 90443 Nuremberg
At Nuremberg-South, 800 m2 of office and lab area are available. Research activities are focused on packaging and power electronic systems for industrial applications and energy technology.
10 11
1 FRAUNHOFER IISB AT A GLANCE
Content
Fraunhofer IISB Nuremberg-EnCN -The IISB is a partner of the excellence projects at the University of Erlangen-Nuremberg Fürther Strasse 250, “Auf AEG”, 90429 Nuremberg (www.eam.uni-erlangen.de, www.aot.uni-erlangen.de/saot/). -The IISB is a member of the “Energie Campus Nürnberg” (www.encn.de). As a member of the “Energie Campus Nürnberg (www.encn.de), the IISB operates a 450 m2 -The IISB closely cooperates with industry and research associations, such as the European branch lab on megawatt power electronics for energy supply in the joint EnCN building in Center for Power Electronics, the Bavarian Clusters for Power Electronics and Mechatronics Nuremberg. & Automation, the German Crystal Association DGKK e.V., or the International Technology Roadmap for Semiconductors (ITRS). Technology Center for Semiconductor Materials THM Freiberg -The IISB is the coordinator and partner, respectively, of numerous European research proj- Am St.-Niclas-Schacht 13, 09599 Freiberg ects. -Together with the Federal Ministry for Education and Research (BMBF), the IISB initiat- The THM is a joint department of Fraunhofer IISB and Fraunhofer ISE. It supports industry in tech- ed and operates the joint student program of BMBF and Fraunhofer for electric mobility, nologies for the production of innovative semiconductor materials to be used in microelectronics, DRIVE-E (www.drive-e.org). optoelectronics, and photovoltaics. The IISB part of the THM comprises 650 m2. -The IISB is a close partner of the “Förderkreis für die Mikroelektronik e.V.”
Chemnitz Laboratory The IISB is member of the following Fraunhofer groups and alliances: Reichenhainer Strasse 29a, 09126 Chemnitz -Fraunhofer Group for Microelectronics (www.mikroelektronik.fraunhofer.de) In Chemnitz, the IISB operates a laboratory of 160 m2 for the industrial application of power -Fraunhofer Energy Alliance (www.energie.fraunhofer.de) electronics. -Fraunhofer Battery Alliance (www.batterien.fraunhofer.de) -Fraunhofer Nanotechnology Alliance (www.nano.fraunhofer.de) etwork and Partners air o E ectron De ices E Within its research activities, Fraunhofer IISB pursues cooperation with numerous national and international partners in joint projects and associations, among others: ni ersity o Er an en- ure er
-Since its foundation, the IISB has been closely cooperating with the University of Erlangen- The Fraunhofer IISB and the Chair of Electron Devices (German abbreviation: LEB) of the Univer- Nuremberg. The institute is directed by the head of the Chair of Electron Devices of the sity of Erlangen-Nuremberg are both headed by Prof. Lothar Frey. University. The joint operation of infrastructure as well as the exchange in education and training create extensive synergies. Within the framework of a cooperation agreement, the two institutions not only jointly operate -The IISB is a core member of the “Leistungszentrum Elektroniksysteme” the University‘s cleanroom hall and other laboratories but also work closely together with regard (www.leistungszentrum-elektroniksysteme.de, www.lze.bayern) . to teaching and research. -The IISB is the coordinator of the Bavarian energy research project SEEDs (www.energy-seeds.org). The cooperation of the Chair of Electron Devices and the Fraunhofer IISB makes it possible to -The IISB is the coordinator of the Bavarian Research Cooperation for Electric Mobility cover the entire chain of topics from basic research to the transfer to industry. For many years, (FORELMO, www.forelmo.de). the vocational training as a “microtechnologist” has been offered jointly by IISB and the Chair of -The IISB is the coordinator of the Fraunhofer Innovation Cluster “Electronics for Sustainable Electron Devices. Employees of IISB assist in courses and internships at the University. Energy Use”.
12 13 FRAUNHOFER IISB AT A GLANCE
Content
The following staff members of Fraunhofer IISB regularly give lectures at the University of Erlan- 1 Chair of Electron Devices of gen-Nuremberg: the University of Erlangen- Nuremberg: main building Dr. Andreas Erdmann and clean room laboratory. -Optical Lithography: Technology, Physical Effects, and Modeling © LEB
Dr. Tobias Erlbacher -Semiconductor Power Devices
Prof. Dr. Lothar Frey -Semiconductor Devices -Process Integration and Components Architecture -Nanoelectronics -Technology of Integrated Circuits
Dr. Michael Jank -Nanoelectronics -Introduction to Printable Electronics
Dr. Jürgen Lorenz -Process and Device Simulation
Prof. Dr. Martin März -Automotive Electronics -Architecture and Systems Technology for Electric Mobility
Prof. Dr. Lothar Pfitzner -Semiconductor Equipment Technics
Priv.-Doz. Dr. Peter Pichler -Reliability and Failure Analysis of Integrated Circuits
Prof. Dr. Heiner Ryssel -Cleanroom Technology
14 15
1 240 Staff Development 231 220
200 185 180 176 163 166 160 159 145 140 136 122 120 106 100
80
60
40
20
0 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014
Scientists Technicans Office Staff Student Assistants FRAUNHOFER IISB AT A GLANCE
10000 T€ Investment
9000
8000
7000
6000
5000
4000 3762 3526 3000 2427 2580 2211 2000 2039 Content 1199 1000 780 758 467 Sta De e o ent In est ents and ud et 0 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014
240 Staff Development 1 Staff development 3 Operating budget according 231 2005 - 2014. to financing domains 220 22000 T€ Budget © Fraunhofer IISB 2005 - 2014. 20319 200 20000 © Fraunhofer IISB 185 180 18000 176 17258 17228 163 166 160 159 16000 15019 145 14256 140 136 14000 13638 12755 122 12402 120 12000 106 100 10000 9709 9031 80 8000
60 6000
40 4000
20 2000
0 0 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014
Scientists Technicans Office Staff Student Assistants Industrial Partners Bavaria + Saxony Federal EU + Others Int. Programs Basic Funding
10000 T€ Investment 3 Capital investment
9000 (without basic equipment and special funds) 8000 2005 - 2014. 7000 © Fraunhofer IISB
6000
5000
4000 3762 3526 3000 2427 2580 2211 2000 2039 1199 1000 780 758 467 0 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014
16 17 22000 T€ Budget
20319 20000
18000 17258 17228
16000 15019 14256 14000 13638 12755 12402 12000
10000 9709 9031 8000
6000
4000
2000
0 2005 2006 2007 2008 2009 2010 2011 2012 2013 2014
Industrial Partners Bavaria + Saxony Federal EU + Others Int. Programs Basic Funding FRAUNHOFER IISB AT A GLANCE
Content Ad isory oard Dece er raun o er IIS ontact In or ation
IISB is consulted by an Advisory Board, whose members come from industry and research: Fraunhofer Institute for Integrated Systems and Device Technology IISB Schottkystrasse 10, 91054 Erlangen, Germany Dr. Reinhard Ploß (Chairman of the Advisory Board) Infineon Technologies AG Phone: +49 (0) 9131 761-0 Fax.: +49 (0) 9131 761-390 Thomas Harder E-Mail: [email protected] European Center for Power Electronics (ECPE) Web: www.iisb.fraunhofer.de
Dr. Stefan Kampmann Director Simulation Robert Bosch GmbH Prof. Lothar Frey Dr. Jürgen Lorenz Phone: +49 (0) 9131 761-100 Phone: +49 (0) 9131 761-210 Markus Lötzsch Fax.: +49 (0) 9131 761-102 Fax.: +49 (0) 9131 761-212 Nuremberg Chamber of Commerce and Industry E-Mail: [email protected] E-Mail: [email protected]
MinR Dr. Stefan Mengel Deputy Director, Energy Electronics Materials Federal Ministry of Education and Research (BMBF) Dr. Martin März Dr. Jochen Friedrich Phone: +49 (0) 9131 761-310 Phone: +49 (0) 9131 761-269 Prof. Dr. Marion Merklein Fax.: +49 (0) 9131 761-312 Fax.: +49 (0) 9131 761-280 Dean of the Faculty of Engineering of the University of Erlangen-Nuremberg E-Mail: [email protected] E-Mail: [email protected]
Dr. Andreas Mühe Administration Technology and Manufacturing Siltronic AG Hartmut Hermes Dr. Anton Bauer Phone: +49 (0) 9131 761-305 Phone: +49 (0) 9131 761-308 Dr. Georg Ried Fax: +49 (0) 9131 761-304 Fax.: +49 (0) 9131 761-360 Bayern Kapital GmbH E-Mail: [email protected] E-Mail: [email protected]
Dr. Martin Schrems External Affairs Devices and Reliability ams AG Prof. Lothar Pfitzner Andreas Schletz Phone: +49 (0) 9131 761-110 Phone: +49 (0) 911 23568-27 Dr. Karl-Heinz Stegemann Fax.: +49 (0) 9131 761-112 Fax.: +49 (0) 911 23568-12 X-FAB Dresden GmbH & Co. KG E-Mail: [email protected] E-Mail: [email protected]
Dr. Thomas Stockmeier Strategic Planning and Public Relations Vehicle Electronics ams AG Dr. Bernd Fischer Dr. Bernd Eckardt Phone: +49 (0) 9131 761-106 Phone: +49 (0) 9131 761-139 MR Dr. Stefan Wimbauer Fax.: +49 (0) 9131 761-102 Fax.: +49 (0) 9131 761-312 Bavarian Ministry of Economic Affairs and Media, Energy and Technology E-Mail: [email protected] E-Mail: [email protected]
18 19 RA ER- ESE S A
Content