Gate-All-Around Silicon Nanowire MOSFETs: Top-down Fabrication and Transport Enhancement Techniques
By
Pouya Hashemi
B.Sc., Electrical Engineering, University of Tehran 2003 M.Sc., Electrical Engineering, University of Tehran 2005
Submitted to the Department of Electrical Engineering and Computer Science in partial fulfillment of the requirements for the degree of
Doctor of Philosophy in Electrical Engineering at the Massachusetts Institute of Technology
September 2010 © 2010 Massachusetts Institute of Technology All rights reserved
Signature of Author ______Department of Electrical Engineering and Computer Science September 3, 2010
Certified by ______Judy L. Hoyt Professor of Electrical Engineering Thesis Supervisor
Accepted by ______Terry P. Orlando Professor of Electrical Engineering Chair, Department Committee on graduate Students
Gate-All-Around Silicon Nanowire MOSFETs: Top-down Fabrication and Transport Enhancement Techniques By Pouya Hashemi
Submitted to the Department of Electrical Engineering and Computer Science on September 3rd, 2010 in partial fulfillment of the requirements for the degree of Doctor of Philosophy in Electrical Engineering and Computer Science
Abstract
Scaling MOSFETs beyond 15 nm gate lengths is extremely challenging using a planar device architecture due to the stringent criteria required for the transistor switching. The top-down fabricated, gate-all-around architecture with a Si nanowire channel is a promising candidate for future technology generations. The gate-all-around geometry enhances the electrostatic control and hence gate length scalability. In addition, it enables use of an undoped channel, which has the potential to minimize threshold voltage variation due to reduced random dopant fluctuations. However, there is little known about carrier mobility in Si nanowire MOSFETs. Because of the different crystal surface orientations, the nanowire sidewalls are expected to influence carrier transport. In addition, sidewall roughness due to non-ideal lithography and etch processes can degrade the carrier transport. Technological performance boosters are thus required to enhance electron and hole transport. Uniaxial strain engineering and maskless hydrogen thermal annealing are investigated in this thesis to enhance carrier mobility in gate-all-around nanowire MOSFETs.
Uniaxial tensile stress of about 2 GPa was incorporated for the first time into suspended Si nanowire channels by a novel lateral relaxation and suspension technique. Gate-all-around strained-Si nanowire n- MOSFETs were fabricated with nanowire widths in the range of 8 to 50 nm and 8 nm body thickness, demonstrating near ideal sub-threshold swing and an enhancement in long-channel current drive and transconductance of approximately 2X for strained-Si nanowires compared to control Si nanowires. Low- field effective mobility of these devices was extracted using split capacitance-voltage measurements and the two-FET method. The analysis indicates electron mobility enhancement for strained-Si nanowires over their unstrained Si counterparts, as well as over planar SOI, specifically at high inversion charge densities. However, the mobility of these nanowires was shown to decrease with decreasing nanowire width, consistent with reported data on unstrained Si nanowires. A simple analytical model was developed to investigate the contribution of the sidewalls to the nanowire width dependence of the electron mobility.
A new design and process technology was developed to accurately investigate the hole mobility of gate-all- around Si nanowires. A conformal high-κ/metal gate process, enabling uniform gating of the nanowire perimeter, was combined with a maskless hydrogen thermal anneal to reduce sidewall roughness scattering. Using this optimized process, long-channel devices with ideal sub-threshold swing (~60 mV/dec) and enhanced current drive were demonstrated, indicating the excellent quality of the nanowire/high-κ interface and low-roughness sidewalls. Capacitance-voltage characteristics of sub-micron-long Si nanowires were accurately measured and verified by quantum-mechanical simulations. Increased effective hole mobility with decreasing nanowire width was observed down to 12 nm for hydrogen annealed nanowires, attributed to the smooth, high-mobility non-(100) sidewalls.
Thesis Supervisor: Judy L. Hoyt Title: Professor of Electrical Engineering
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To my dear mother, Azam Yazdani, for all her love and dedication