Fountain Pen Nanolithography (FPN)
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Nanolithography Activity in the Group: BG Group and AKR Group Has Extensive Activities in the Area of Nanolithography
Nanolithography activity in the group: BG group and AKR group has extensive activities in the area of nanolithography. The work is done in a Clean room of the centre which has been established with support from the Nanomission Projects. The clean room is class 10,000 class room which is maintained at class 1000 in specific areas. The facilities in the clean room allow optical lithography, electron beam lithography (EBL) and focused ion beam (FIB) lithography. Visit of the Honourable Union Minister for Science and Technology and Earth rd Science to the Bose Centre Clean room on 3 May, 2015 (Standing in front of Helios machine, 2nd from left ) One of the activities that is carried out on a routine basis is to integrate sub- 100nm nanowire of any material produced by bottom-up approach like chemical route or physical/chemical vapour deposition to a single nanowire device connected to 2 or 4 probes. Integrating the rich materials base of bottom-up approach with nano-lithograhic process is regularly done . For attaching nanowires to prefabricated contact pads for opt-electronic or electronic measurements in addition to EBL –lift off, FIB or Focused electron beam deposited metals (Pt or W) are also used. The group has done extensive work in the area of interface physics. Cross-sectional lamella using ion-beam lithographic technique is done on regular basis. WO 3/Pt/Si 30 µµµm TEM Lamella preparation of a nanowire grown Omni probe lifting off the sample on substrate using Ion-beam lithography Interface analysis of X-TEM Specimen: Partially/non aligned NWs- Interface cross section c Ankita Ghatak, Samik Roy Moulik Barnali Ghosh, RSC Adv. -
C:Documents and Settingsgarymy Documentswordperfect User
Gary & Myrna Lehrer’s Quarterly Illustrated Vintage Pen Catalog [email protected] Issue #54 - March 2010 See the Catalog in full color on the web site. For about a week you’ll need a password for access (be sure to also see what’s remaining from previous Catalogs). WEB SITE PAS SWORD FOR CATALOG #54: (www.gopens.com): BLUE Catalog #54 Feature: Incredible “Extraordinary Pens” Over 260 Items 35+ Manufacturers Represented Some Great Italian Pens Sheaffer, Wahl, Waterman, Parker & more A great group of Montblancs Contact Information: Tel: (203) 389-5295 email: [email protected] Fax: (859) 909-1882 Call until 10:30 PM Eastern Time; Fax anytime We check our email often Subscription Expired: A (1) on your mailing label means your subscription has expired. “Internet Only” renewal is $10. “Hard Copy” Renewal is $25 US and $35 Foreign (see website for details). Received a sample copy? Don’t forget to subscribe ! Please see inside front page for abbreviations and other important information! Gary & Myrna Lehrer 16 Mulberry Road Woodbridge, CT 06525-1717 March 2010 - CATALOG #54 Here’s Some Other Important Information : GIFT CERTIFICATES : Available in any denomination. No extra cost! No expiration! Always fully refundable! REPAIRS - CONSIGNMENT - PEN PURCHASES : We do the full array of pen repairs - very competitively priced. Ask about consignment rates for the Catalog (we reserve the right to turn down consignments), or see the web site for details. We are also always looking to purchase one pen or entire collections. ABBREVIATIONS : Mint - No sign of use Fine - Used, parts show wear Near Mint - Slightest signs of use Good - Well used, imprints may be almost Excellent - Imprints good, writes well, looks great gone, plating wear Fine+ - One of the following: some brassing, Fair - A parts pen some darkening, or some wear ---------------------------------------------------------------------------------------------------------------------------------------- LF - Lever Filler HR - Hard Rubber PF - Plunger Filler (ie. -
KAWECO PENS Page 10
Pen Chalet Contact +877.509.0378 Website www.penchalet.com Spring 2014 PEN CHALET Pen Chalet offers a wide selection of fine writing instruments, inks and accessories. Browse our catalog or visit our store online for an even larger selection. Please contact our customer service team if you have any questions or can’t find an item you are looking for. TABLE OF CONTENTS SAILOR PENS page 02 MONTEVERDE PENS pages 03 - 04 PELIKAN PENS pages 05 - 06 PILOT/NAMIKI PENS pages 07 - 08 AURORA PENS page 09 KAWECO PENS page 10 TACCIA PENS page 10 STIPULA PENS page 11 DELTA PENS page 11 CONKLIN PENS page 12 SHEAFFER PENS page 12 01 www.penchalet.com SAILOR PENS 1911 STANDARD fountain pen This Sailor original comes with a gold nib and looks sharp. Choose from a wide selection of color and nib sizes. $ 156 PRO GEAR SLIM fountain pen Simple, yet elegant. $ 156 PIGMENTED bottled ink Sailor pigmented inks offer a darker, richer ink that is quick drying and water resistant. available in black or blue/black as well as cartridges $ 21.60 www.penchalet.com 02 Choose from fountain pen, inkball pen, ballpoint pen or mechanical pencil! ONE TOUCH TOOL from $ 27 The Monteverde Impressa offers a glossy metallic barrel and cap. This pen is sure to impress! MONTEVERDE PENS A world of luxury and innovation Monteverde has just come out with several new pen designs including the one touch tool pens/ pencils or the stylish Impressa pens. IMPRESSA fountain pen $ 40 03 www.penchalet.com REGATTA fountain pen This popular pen just a got a face lift! Choose from the new popular sport colors including black, red, and yellow! also available as a rollerball and a ballpoint $ 100 PRIMA fountain pen Monteverde just introduced 2 new colors to this line for 2014! also available as a rollerball and a ballpoint $ 56 POQUITO fountain pen This compact pen is ideal for carrying in your pocket or purse. -
Recent Applications of Advanced Atomic Force Microscopy in Polymer Science: a Review
polymers Review Recent Applications of Advanced Atomic Force Microscopy in Polymer Science: A Review Phuong Nguyen-Tri 1,2,*, Payman Ghassemi 2, Pascal Carriere 3, Sonil Nanda 4 , Aymen Amine Assadi 5 and Dinh Duc Nguyen 6,7 1 Institute of Research and Development, Duy Tan University, Da Nang 550000, Vietnam 2 Département de Chimie, Biochimie et Physique, Université du Québec à Trois-Rivières (UQTR), Trois-Rivières, QC G8Z 4M3, Canada; [email protected] 3 Laboratoire MAPIEM (EA 4323), Matériaux Polymères Interfaces Environnement Marin, Université de Toulon, CEDEX 9, 83041 Toulon, France; [email protected] 4 Department of Chemical and Biological Engineering, University of Saskatchewan, Saskatoon, SK S7N 5A2, Canada; [email protected] 5 ENSCR—Institut des Sciences Chimiques de Rennes (ISCR)—UMR CNRS 6226, Univ Rennes, 35700 Rennes, France; [email protected] 6 Faculty of Environmental and Food Engineering, Nguyen Tat Thanh University, 300A Nguyen Tat Thanh, District 4, Ho Chi Minh City 755414, Vietnam; [email protected] 7 Department of Environmental Energy Engineering, Kyonggi University, Suwon 16227, Korea * Correspondence: [email protected]; Tel.: +819-376-5011 (ext. 4505) Received: 5 March 2020; Accepted: 13 May 2020; Published: 17 May 2020 Abstract: Atomic force microscopy (AFM) has been extensively used for the nanoscale characterization of polymeric materials. The coupling of AFM with infrared spectroscope (AFM-IR) provides another advantage to the chemical analyses and thus helps to shed light upon the study of polymers. This paper reviews some recent progress in the application of AFM and AFM-IR in polymer science. -
Atomic Force Microscopy - Basics and Applications
Astrid Kronenberger School of Engineering and Science Atomic Force Microscopy - Basics and Applications Summer School June 2006 „Complex Materials: Cooperative Projects of the Natural, Engineering and Biosciences“ Outline • Scanning Probe Microscopy • Atomic Force Microscopy – General set-up & operation modes – Sample preparation • Applications in life science – Imaging mode –Force-distancemode •Conclusion Scanning Probe Microscopy (SPM) ~1600 Light Microscope 1938: Transmission Electron Microscope 1964: Scanning Electron Microscope 1982: Scanning Tunneling Microscope 1984: Scanning Near-field Optical Microscope 1986: Atomic Force Microscope - magnetic force, lateral force, chemical force... Scanning Probe Microscopy • Creates images of surfaces using a probe. • Probe is moved (scanned) over the sample. tip • Sample-probe interaction is monitored as function of location. sample + Image resolution limited by probe-sample interaction volume - not by diffraction . + Interaction can modify surface - nanolithography possible. - Scanning technique quite slow. - Limited maximum image size. Atomic Force Microscopy position laser sensitive beam detector cantilever with tip Molecular interaction: E = F Δs sample E ~ eV; Δs~ Å F ~ 2.10-9 N Typical AFM resolution: x-y: 1nm; z: 0.1nm Detection: - sub-Å deflection -pNforces General AFM set-up measure deflection controller quadrant laser photodiode Adjust tip- sample distance cantilever sample surface piezo x-y-z ceramic Moving tip / moving sample: Use U=+/- 220 V x-, y-axis: 1 ...125 µm z-axis: 1 ... 20 µm closed / open loop control Basic AFM modi • Imaging mode –contactmode –non contactmode – intermittent / tapping mode •Force-distancemode – force spectroscopy – combined imaging & force spectroscopy Static AFM modi •Contactmode: – tip in continuous contact with sample – preferably used for hard samples – imaging in air and liquid – high resolution detect: deflection • Force spectroscopy mode: – consecutive cycles of tip approach and retract – interaction forces between tip and sample are recorded . -
New Summary Report - 26 June 2015
New Summary Report - 26 June 2015 1. How did you find out about this survey? Other 17% Email from Renaissance Art 83.1% Email from Renaissance Art 83.1% 539 Other 17.0% 110 Total 649 1 2. Where are you from? Australia/New Zealand 3.2% Asia 3.7% Europe 7.9% North America 85.2% North America 85.2% 553 Europe 7.9% 51 Asia 3.7% 24 Australia/New Zealand 3.2% 21 Total 649 2 3. What is your age range? old fart like me 15.4% 21-30 22% 51-60 23.3% 31-40 16.8% 41-50 22.5% Statistics 21-30 22.0% 143 Sum 20,069.0 31-40 16.8% 109 Average 36.6 41-50 22.5% 146 StdDev 11.5 51-60 23.3% 151 Max 51.0 old fart like me 15.4% 100 Total 649 3 4. How many fountain pens are in your collection? 1-5 23.3% over 20 35.8% 6-10 23.9% 11-20 17.1% Statistics 1-5 23.3% 151 Sum 2,302.0 6-10 23.9% 155 Average 5.5 11-20 17.1% 111 StdDev 3.9 over 20 35.8% 232 Max 11.0 Total 649 4 5. How many pens do you usually keep inked? over 10 10.3% 7-10 12.6% 1-3 40.7% 4-6 36.4% Statistics 1-3 40.7% 264 Sum 1,782.0 4-6 36.4% 236 Average 3.1 7-10 12.6% 82 StdDev 2.1 over 10 10.3% 67 Max 7.0 Total 649 5 6. -
Introduction Scanning Probe Microscopy Techniques for Electrical and Electromechanical Characterization
University of Nebraska - Lincoln DigitalCommons@University of Nebraska - Lincoln Alexei Gruverman Publications Research Papers in Physics and Astronomy January 2007 Introduction Scanning Probe Microscopy Techniques for Electrical and Electromechanical Characterization Sergei Kalinin Oak Ridge National Laboratory, [email protected] Alexei Gruverman University of Nebraska-Lincoln, [email protected] Follow this and additional works at: https://digitalcommons.unl.edu/physicsgruverman Part of the Physics Commons Kalinin, Sergei and Gruverman, Alexei, "Introduction Scanning Probe Microscopy Techniques for Electrical and Electromechanical Characterization" (2007). Alexei Gruverman Publications. 43. https://digitalcommons.unl.edu/physicsgruverman/43 This Article is brought to you for free and open access by the Research Papers in Physics and Astronomy at DigitalCommons@University of Nebraska - Lincoln. It has been accepted for inclusion in Alexei Gruverman Publications by an authorized administrator of DigitalCommons@University of Nebraska - Lincoln. Published in: Scanning Probe Microscopy: Electrical and Electromechanical Phenomena at the Nanoscale, Sergei Kalinin and Alexei Gruverman, editors, 2 volumes (New York: Springer Science+Business Media, 2007). ◘ ◘ ◘ ◘ ◘ ◘ ◘ Sergei Kalinin, Oak Ridge National Laboratory Alexei Gruverman, University of Nebraska–Lincoln This document is not subject to copyright. Introduction Scanning Probe Microscopy Techniques for Electrical and Electromechanical Characterization s.Y. KALININ AND A. GRUVERMAN Progress in modem science is impossible without reliable tools for characteriza tion of structural, physical, and chemical properties of materials and devices at the micro-, nano-, and atomic scale levels. While structural information can be obtained by such established techniques as scanning and transmission electron microscopy, high-resolution examination oflocal electronic structure, electric po tential and chemical functionality is a much more daunting problem. -
Montegrappa… First 360º Design Portal Offers Exotic Materials, Hi- Fidelity Rendering and Complete Design Control
History and Future e live in a world that places a high value on time. Instruments made to count time have come to command astronomical prices. Yet in the manic, noisy crossfire of modern life, objects designed to make time count for more are rare. For more than a century, a family company nested in the Italian Dolomites has remained relentlessly curious about perfecting the deeply personal – often magical – relationship between paper and the human mind. Since beginning our quest for perfection in 1912, we have watched words - and the countless hours we devote to them – become devalued by abundance. ‘Progress’ has often come at the price of values, meaning and truth. Far from representing a suspension of progress, Montegrappa pens exist so that connoisseurs of thought and devotees of words may savour the luxury of slowing time down. “All you have to do is write one true sentence. Write the truest sentence that you know.” Ernest Hemingway Write the truest sentence that you knowWrite the Many of our friends and rivals delight in celebrating pens as relics of days gone by. With the greatest of respect, we beg to differ. Whereas others portray themselves as keepers of tradition, Montegrappa remains steadfastly committed to the tradition of innovation. Our manufactory is situated in the exact location where Italian fountain pen production began more than a century ago. Within these walls, antique artisanal high jewellery craft stands shoulder-to-shoulder with high- precision, computer-controlled technologies. But technical excellence is the very least our community of Montegrappisti deserves. Above all, the imaginations of fantasists, visionaries, and our most exuberant users are what spur us on to ever more audacious and uncommon creations. -
Bilayer, Nanoimprint Lithography Brian Faircloth Nuvonyx, Inc., Bridgeton, Missouri 63044 Henry Rohrs Washington University, St
Bilayer, nanoimprint lithography Brian Faircloth Nuvonyx, Inc., Bridgeton, Missouri 63044 Henry Rohrs Washington University, St. Louis, Missouri 63130 Richard Tiberio Cornell University, Ithaca, New York 14853 Rodney Ruoff Washington University, St. Louis, Missouri 63130 Robert R. Krchnaveka) Rowan University, Glassboro, New Jersey 08028 ͑Received 3 May 1999; accepted 21 April 2000͒ Nanoimprint lithography has been shown to be a viable means of patterning polymer films in the sub-100 nm range. In this work, we demonstrate the use of a bilayer resist to facilitate the metal liftoff step in imprinter fabrication. The bilayer resist technology exhibits more uniform patterns and fewer missing features than similar metal nanoparticle arrays fabricated with single layer resist. The bilayer resist relies upon the differential solubility between poly͑methyl methacrylate͒ and poly͑methyl methacrylate methacrylic acid copolymer͒. Evidence is presented that shows the technique has a resolution of better than 10 nm. © 2000 American Vacuum Society. ͓S0734-211X͑00͒03104-8͔ I. INTRODUCTION tion demonstrated in the polymer resist layer. The formation of patterned metal layers is one application. Finely patterned Due to the inevitable transition from the microelectronic metal layers are used as interconnects in integrated circuits. to the nanoelectronic age, the demand for sub-100 nm fea- They can also be used as catalysts for subsequent layer ture sizes in lithographic techniques will increase greatly. As growth. If the subsequent metal layers cannot readily be current devices rapidly approach the 100 nm barrier, the mi- etched, e.g., due to crystalline dependent etching rates, an croelectronics industry is considering several technologies to additive approach such as liftoff is desirable. -
Scanning Tunneling Microscope Control System for Atomically
Innovations in Scanning Tunneling Microscope Control Systems for This project will develop a microelectromechanical system (MEMS) platform technology for scanning probe microscope-based, high-speed atomic scale High-throughput fabrication. Initially, it will be used to speed up, by more than 1000 times, today’s Atomically Precise single tip hydrogen depassivation lithography (HDL), enabling commercial fabrication of 2D atomically precise nanoscale devices. Ultimately, it could be used to fabricate Manufacturing 3D atomically precise materials, features, and devices. Graphic image courtesy of University of Texas at Dallas and Zyvex Labs Atomically precise manufacturing (APM) is an emerging disruptive technology precision movement in three dimensions mechanosynthesis (i.e., moving single that could dramatically reduce energy are also needed for the required accuracy atoms mechanically to control chemical and coordination between the multiple reactions) of three dimensional (3D) use and increase performance of STM tips. By dramatically improving the devices and for subsequent positional materials, structures, devices, and geometry and control of STMs, they can assembly of nanoscale building blocks. finished goods. Using APM, every atom become a platform technology for APM and deliver atomic-level control. First, is at its specified location relative Benefits for Our Industry and an array of micro-machined STMs that Our Nation to the other atoms—there are no can work in parallel for high-speed and defects, missing atoms, extra atoms, high-throughput imaging and positional This APM platform technology will accelerate the development of tools and or incorrect (impurity) atoms. Like other assembly will be designed and built. The system will utilize feedback-controlled processes for manufacturing materials disruptive technologies, APM will first microelectromechanical system (MEMS) and products that offer new functional be commercialized in early premium functioning as independent STMs that can qualities and ultra-high performance. -
Atomic Force Microscopy*
Atomic force microscopy* Jason P. Killgore and Teresa L. Kirschling Applied Chemicals and Materials Division, National Institute of Standards and Technology, Boulder, CO 80305 I. What does the technique do? The atomic force microscope (AFM)[1] has become a universal tool for performing nanoscale characterization of surfaces. It has the resolution to image features as small as individual atoms [2], while still providing the range to investigate samples as large as several millimeters [3]. The AFM is part of a class of instruments known as scanning probe microscopes that also includes techniques such as scanning tunneling microscopy [4] and scanning near field optical microscopy [5] in addition to the more widely used atomic force microscopy. The AFM consists of a cantilever based sensor that is capable of detecting and responding to various forces that may arise between the sample and a sharpened tip located near the apex of the cantilever. The instrument has proven capable of measuring a broad range (in both magnitude and origin) of forces for a wide variety of applications. The earliest uses of the AFM were for topographic imaging of a sample surface. An image is created by scanning the cantilever tip back and forth across the sample (in a raster pattern), while recording the height of the surface. Compared to other techniques such as electron microscopies and tunneling microscopy with comparable spatial resolution, the AFM excels in its ability to image both conducting and insulating materials. The instrument is also capable of performing localized spectroscopy measurements * Publication of NIST, an agency of the US government, not subject to copyright and capturing spatially resolved maps of functional properties such as conductivity [6], elasticity [7] and adhesion [7]. -
Electron Beam Lithography for Nanofabrication
Departament de Física, Facultat de Ciències Universitat Autònoma de Barcelona January 2008 ElectronElectron beambeam lithographylithography forfor NanofabricationNanofabrication PhD Thesis by Gemma Rius Suñé Directed by Francesc Pérez-Murano and Joan Bausells Institut de Microelectrònica de Barcelona -------------------------------------------- The cover image corresponds to a PMMA residual found after the stripping of the resist layer. Even though it seems a new planet, it is 1µm in diameter. -------------------------------------------- This memory reflects part of the work performed at the Nanofabrication Laboratory of the IMB–CNM during the past 5 years, based on Electron Beam Lithography (EBL). Nanofabrication is a very active area of research, as can be noticed from the number of publications that appear continuously and from the number of running R&D projects. Most of the work is realized in the framework of three European research projects. Novopoly project deals with the development of new polymer materials for applications in micro and nano systems. The development of a new EBL resist is framed in this project. Within NaPa, Emerging Nanopatterning methods, the development of NEMS fabrication with EBL is used to realise discrete nanomechanical devices. They are used to characterize the performance of resonating nanostructures and signal enhancement is achieved by their integration in CMOS circuits. The aim of Charpan is the development of a new patterning tool based on several charged particle species. The incidence of charged particle beams on devices is studied to evaluate potential effects induced during fabrication. Carbon nanotube (CNT) based devices contribute to some tasks of national projects Crenatun and Sensonat. In particular, the technology for fabrication of high performance CNT field-effect transistors and their preparation for sensing applications is established.