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Electron Beam Lithography for Nanofabrication

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Electron Beam Lithography for Nanofabrication Departament de Física, Facultat de Ciències Universitat Autònoma de Barcelona January 2008 ElectronElectron beambeam lithographylithography forfor NanofabricationNanofabrication PhD Thesis by Gemma Rius Suñé Directed by Francesc Pérez-Murano and Joan Bausells Institut de Microelectrònica de Barcelona -------------------------------------------- The cover image corresponds to a PMMA residual found after the stripping of the resist layer. Even though it seems a new planet, it is 1µm in diameter. -------------------------------------------- This memory reflects part of the work performed at the Nanofabrication Laboratory of the IMB–CNM during the past 5 years, based on Electron Beam Lithography (EBL). Nanofabrication is a very active area of research, as can be noticed from the number of publications that appear continuously and from the number of running R&D projects. Most of the work is realized in the framework of three European research projects. Novopoly project deals with the development of new polymer materials for applications in micro and nano systems. The development of a new EBL resist is framed in this project. Within NaPa, Emerging Nanopatterning methods, the development of NEMS fabrication with EBL is used to realise discrete nanomechanical devices. They are used to characterize the performance of resonating nanostructures and signal enhancement is achieved by their integration in CMOS circuits. The aim of Charpan is the development of a new patterning tool based on several charged particle species. The incidence of charged particle beams on devices is studied to evaluate potential effects induced during fabrication. Carbon nanotube (CNT) based devices contribute to some tasks of national projects Crenatun and Sensonat. In particular, the technology for fabrication of high performance CNT field-effect transistors and their preparation for sensing applications is established. CONTENTS Preface Acknowledgements 1 Introduction .............................................................................................................1 1.1 Towards the nanometer scale....................................................................................... 1 1.2 Nanotechnology and nanofabrication .......................................................................... 3 1.3 Nanopatterning. Nanolithographic techniques............................................................. 6 1.4 Nanoapplications. Nanometric devices...................................................................... 10 1.4.1 Nanodevices. From micro- to nano-electronics. ............................................... 11 2 Electron Beam Lithography.................................................................................17 2.1 Lithographic technique.............................................................................................. 17 2.1.1 Introduction to the concept................................................................................ 17 2.1.2 Instrumental ...................................................................................................... 18 2.1.3 Characteristics................................................................................................... 19 2.1.4 Limitations ........................................................................................................ 19 2.1.5 Resolution and applications .............................................................................. 20 2.2 Instruments for SEM based lithography .................................................................... 21 2.2.1 SEM based system ............................................................................................ 21 2.2.2 Electron source.................................................................................................. 22 2.2.3 SEM column ..................................................................................................... 23 2.2.4 Chamber and stage ............................................................................................ 27 2.2.5 Computer control.............................................................................................. 27 2.2.6 Vacuum system................................................................................................. 29 2.3 Exposure procedure................................................................................................... 30 2.3.1 Equipment ......................................................................................................... 30 2.3.2 Procedure .......................................................................................................... 31 2.3.3 Deflection calibration........................................................................................ 32 2.3.4 Positioning ........................................................................................................ 33 2.3.5 Focusing............................................................................................................ 36 2.3.6 Pattern design.................................................................................................... 37 2.3.7 Exposure conditions.......................................................................................... 39 3 Electron beam irradiation of resists ....................................................................47 3.1 Exposure effect .......................................................................................................... 47 3.1.1 Organic resists................................................................................................... 48 3.1.2 Resist processing............................................................................................... 51 3.1.3 Modeling the effect of exposure ....................................................................... 52 3.2 Poly(methyl methacrylate). A positive resist............................................................. 59 3.2.1 Simulations on PMMA ..................................................................................... 61 3.2.2 Exposure results in PMMA............................................................................... 64 3.2.3 Methacrylic resists............................................................................................ 70 3.3 Epoxy based resists. Negative resists......................................................................... 72 3.3.1 Simulations on SU8 .......................................................................................... 73 3.3.2 Electron beam lithography on thick layers of mr-L 5005 XP ........................... 75 3.3.3 Electron beam on thin layers: mr-EBL 6000.1 XP and ma-N 2401.................. 79 3.3.4 Post-lithography processing: etch resistance..................................................... 88 3.4 Proximity effect correction ........................................................................................ 95 3.4.1 Proximity effect................................................................................................. 95 3.4.2 Theoretical model. Proximity function ............................................................. 97 3.4.3 Methodology for Proximity Effect Correction parameter................................. 99 3.4.4 Experimental Proximity Effect Correction parameters................................... 101 3.4.5 Computer-based Proximity Effect Correction. NanoPECS ............................ 105 3.4.6 Results of Proximity Effect Correction on PMMA......................................... 106 3.4.7 Results of Proximity Effect Correction on mr-EBL 6000.1 XP...................... 111 4 Fabrication of nanomechanical devices.............................................................119 4.1 Introduction to nanomechanics................................................................................ 119 4.2 Fabrication process.................................................................................................. 122 4.3 Fabrication of discrete nanomechanical devices...................................................... 123 4.4 Fabrication of CMOS-integrated nanomechanical devices ..................................... 130 4.5 Focused Ion Beam fabrication combined with Electron Beam Lithography........... 136 5 Fabrication of Carbon Nanotube based devices by EBL.................................143 5.1 Introduction to carbon nanotubes ............................................................................ 143 5.2 Fabrication of CNTFETs ......................................................................................... 146 5.2.1 Contacting deposited CNTs ............................................................................ 147 5.2.2 Contacting CVD grown CNTs........................................................................ 150 5.3 Electrical characterization........................................................................................ 154 5.3.1 Electrical measurements set up. ...................................................................... 157 5.3.2 Results for semiconducting and metallic contacted CNTs.............................. 158 5.3.3 Device performance overview ........................................................................ 168 5.4 Sensors based on CNTFETs .................................................................................... 169 5.4.1 CNT protection, passivation............................................................................ 170
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