Nanolithography
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Nanoparticle Arrays on Surfaces for Electronic, Optical, and Sensor Applications** Andrew N
18 WILEY-VCH-Verlag GmbH, D-69451 Weinheim, 2000 1439-4235/00/01/01 $ 17.50+.50/0 CHEMPHYSCHEM 2000,1,18±52 Nanoparticle Arrays on Surfaces for Electronic, Optical, and Sensor Applications** Andrew N. Shipway,[a] Eugenii Katz,[a] and Itamar Willner*[a] Particles in the nanometer size range are attracting increasing their organization on surfaces for the construction of functional attention with the growth of interest in nanotechnological interfaces. In this review, we address the research that has led to disciplines. Nanoparticles display fascinating electronic and optical numerous sensing, electronic, optoelectronic, and photoelectronic properties as a consequence of their dimensions and they may be interfaces, and also take time to cover the synthesis and easily synthesized from a wide range of materials. The dimensions characterization of nanoparticles and nanoparticle arrays. of these particles makes them ideal candidates for the nano- engineering of surfaces and the fabrication of functional nano- KEYWORDS: structures. In the last five years, much effort has been expended on colloids ´ interfaces ´ monolayers ´ nanostructures ´ sensors 1. Introduction The emerging disciplines of nanoengineering,[1] nanoelectron- optical,[7, 10±13] and catalytic[14] properties originating from their ics,[2] and nanobioelectronics[3] require suitably sized and func- quantum-scale dimensions.[15] tional building blocks with which to construct their architectures In order to tailor the new generation of nanodevices and and devices. This need has encouraged -
Nanolithography Activity in the Group: BG Group and AKR Group Has Extensive Activities in the Area of Nanolithography
Nanolithography activity in the group: BG group and AKR group has extensive activities in the area of nanolithography. The work is done in a Clean room of the centre which has been established with support from the Nanomission Projects. The clean room is class 10,000 class room which is maintained at class 1000 in specific areas. The facilities in the clean room allow optical lithography, electron beam lithography (EBL) and focused ion beam (FIB) lithography. Visit of the Honourable Union Minister for Science and Technology and Earth rd Science to the Bose Centre Clean room on 3 May, 2015 (Standing in front of Helios machine, 2nd from left ) One of the activities that is carried out on a routine basis is to integrate sub- 100nm nanowire of any material produced by bottom-up approach like chemical route or physical/chemical vapour deposition to a single nanowire device connected to 2 or 4 probes. Integrating the rich materials base of bottom-up approach with nano-lithograhic process is regularly done . For attaching nanowires to prefabricated contact pads for opt-electronic or electronic measurements in addition to EBL –lift off, FIB or Focused electron beam deposited metals (Pt or W) are also used. The group has done extensive work in the area of interface physics. Cross-sectional lamella using ion-beam lithographic technique is done on regular basis. WO 3/Pt/Si 30 µµµm TEM Lamella preparation of a nanowire grown Omni probe lifting off the sample on substrate using Ion-beam lithography Interface analysis of X-TEM Specimen: Partially/non aligned NWs- Interface cross section c Ankita Ghatak, Samik Roy Moulik Barnali Ghosh, RSC Adv. -
Paper 73-3 Has Been Designated As a Distinguished Paper at Display Week 2018
Distinguished Student Paper 73-3 / T. Ji Paper 73-3 has been designated as a Distinguished Paper at Display Week 2018. The full- length version of this paper appears in a Special Section of the Journal of the Society for Information Display (JSID) devoted to Display Week 2018 Distinguished Papers. This Special Section will be freely accessible until December 31, 2018 via: http://onlinelibrary.wiley.com/page/journal/19383657/homepage/display_week_2018.htm Authors that wish to refer to this work are advised to cite the full-length version by referring to its DOI: https://doi.org/10.1002/jsid.640 SID 2018 DIGEST Distinguished Student Paper 73-3 / T. Ji Tingjing Ji- Full Color Quantum Dot Light-Emitting Diodes Patterned by Photolithography Technology Full Color Quantum Dot Light-Emitting Diodes Patterned by Photolithography Technology Tingjing Ji (student), Shuang Jin, Bingwei Chen, Yucong Huang, Zijing Huang, Zinan Chen, Shuming Chen*, Xiaowei Sun Department of Electrical and Electronic Engineering, Southern University of Science and Technology, Shenzhen, PR China, 518055 *Corresponding author: [email protected] Abstract the traditional patterning processes. The QLED device achieved Photolithography is a high resolution and mature patterning maximum electroluminescence intensity of 23 770 cd/m2. [13] technique which has been widely used in semiconductor industry. For display application, a pixel consists of red (R), green (G) and In this work, we use photolithography to fine pattern the QD blue (B) side-by-side sub-pixels, which thereby requires a high layers. Because it is difficult to etch the QD layer, lift-off is used resolution patterning of the light-emission layers. -
Patterning of Quantum Dots by Dip-Pen and Polymer Pen Nanolithography
Nanofabrication 2015; 2: 19–26 Research Article Open Access Soma Biswas*, Falko Brinkmann, Michael Hirtz, Harald Fuchs Patterning of Quantum Dots by Dip-Pen and Polymer Pen Nanolithography Abstract: We present a direct way of patterning CdSe/ lithography and photolithography, these direct techniques ZnS quantum dots by dip-pen nanolithography and do not rely on resist layers and multi-step processing, but polymer pen lithography. Mixtures of cholesterol and allow the precise deposition of ink mixtures. Spot sizes in phospholipid 1,2-dioleoyl-sn-glycero-3 phosphocholine commercially widespread inkjet printing and other related serve as biocompatible carrier inks to facilitate the transfer spotting techniques are usually in the range of 50 to 500 of quantum dots from the tips to the surface during µm [5–7], while high resolution approaches (µCP, DPN and lithography. While dip-pen nanolithography of quantum PPL) reach sub-µm features. dots can be used to achieve higher resolution and smaller Microcontact printing utilises a predesigned pattern features (approximately 1 µm), polymer pen poly(dimethylsiloxane) (PDMS) stamp that is first coated lithography is able to address intermediate pattern scales with ink and subsequently pressed onto the surface in the low micrometre range. This allows us to combine manually. A total area up to cm2 can be patterned retaining the advantages of micro contact printing in large area and a lateral resolution of approximately 100 nm [8]. Dip-pen massive parallel patterning, with the added flexibility in nanolithography (Figure 1a) employs an atomic force pattern design inherent in the DPN technique. microscopy tip (AFM) as a quill pen. -
Designing a Nanoelectronic Circuit to Control a Millimeter-Scale Walking Robot
Designing a Nanoelectronic Circuit to Control a Millimeter-scale Walking Robot Alexander J. Gates November 2004 MP 04W0000312 McLean, Virginia Designing a Nanoelectronic Circuit to Control a Millimeter-scale Walking Robot Alexander J. Gates November 2004 MP 04W0000312 MITRE Nanosystems Group e-mail: [email protected] WWW: http://www.mitre.org/tech/nanotech Sponsor MITRE MSR Program Project No. 51MSR89G Dept. W809 Approved for public release; distribution unlimited. Copyright © 2004 by The MITRE Corporation. All rights reserved. Gates, Alexander Abstract A novel nanoelectronic digital logic circuit was designed to control a millimeter-scale walking robot using a nanowire circuit architecture. This nanoelectronic circuit has a number of benefits, including extremely small size and relatively low power consumption. These make it ideal for controlling microelectromechnical systems (MEMS), such as a millirobot. Simulations were performed using a SPICE circuit simulator, and unique device models were constructed in this research to assess the function and integrity of the nanoelectronic circuit’s output. It was determined that the output signals predicted for the nanocircuit by these simulations meet the requirements of the design, although there was a minor signal stability issue. A proposal is made to ameliorate this potential problem. Based on this proposal and the results of the simulations, the nanoelectronic circuit designed in this research could be used to begin to address the broader issue of further miniaturizing circuit-micromachine systems. i Gates, Alexander I. Introduction The purpose of this paper is to describe the novel nanoelectronic digital logic circuit shown in Figure 1, which has been designed by this author to control a millimeter-scale walking robot. -
DNA-Based Artificial Nanostructures: Fabrication, Properties And
(Invited) Chapter V in “Handbook of Nanostructured Biomaterials and Their Applications in Nanobiotechnology,” Vols. 1-2 (ISBN: 1-58883-033-0), edited by Nalwa, American Scientific Publishers (2005). DNA-based Artificial Nanostructures: Fabrication, Properties, and Applications Young Sun and Ching-Hwa Kiang* Department of Physics & Astronomy, Rice University 6100 Main Street - MS61, Houston, TX 77005, USA Phone: (713) 348-4130, Fax: (713) 348-4150, E-mail: [email protected] Keywords: DNA; nanostructure; self-assembly; nanoparticle; carbon nanotube; biosensor. *To whom correspondence should be addressed: [email protected]. 1 Table of Content 1. Introduction 2. DNA fundamentals 3. Attachment of DNA to surface 4. Fabrication of nanostructures using DNA 4.1 Nanostructures of pure DNA 4.2 DNA-based assembly of metal nanoparticles 4.3 Construction of semiconductor particle arrays using DNA 4.4 DNA-directed nanowires 4.5 DNA-functionalized carbon nanotubes 4.6 Field-transistor based on DNA 4.7 Nanofabrication using artificial DNA 5. DNA-based nanostructures as biosensors 6. Properties of DNA-linked gold nanoparticles 6.1 Aggregation of DNA-modified gold nanoparticles 6.2 Melting of DNA-linked gold nanoparticle aggregations 6.3 Effects of external variables on the melting properties 7. Conclusion 2 1. Introduction The integration of nanotechnology with biology and bioengineering is producing many advances. The essence of nanotechnology is to produce and manipulate well- defined structures on the nanometer scale with high accuracy. Conventional technologies based on the "top-down” approaches, such as the photolithographyic method, are difficult to continue to scale down due to real physical limitations including size of atoms, wavelengths of radiation used for lithography, and interconnect schemes. -
Nanoimprint Lithography: Methods and Material Requirements**
REVIEW DOI: 10.1002/adma.200600882 Nanoimprint Lithography: Methods and Material Requirements** By L. Jay Guo* Nanoimprint lithography (NIL) is a nonconventional lithographic technique for high-throughput patterning of polymer nanostructures at great precision and at low costs. Unlike traditional lithographic ap- proaches, which achieve pattern definition through the use of photons or electrons to modify the chemical and physical properties of the resist, NIL relies on direct mechanical deformation of the resist material and can therefore achieve resolutions beyond the limitations set by light diffraction or beam scattering that are encountered in conventional techniques. This Review covers the basic principles of nanoimprinting, with an emphasis on the requirements on materi- als for the imprinting mold, surface properties, and resist materials for successful and reliable nanostructure replication. 1. Introduction proaches towards nanostructure fabrication have been exploited in the past 15 years, without resorting to expensive The ability to fabricate structures from the micro- to the tools such as those used in deep-UV projection lithography nanoscale with high precision in a wide variety of materials is and electron-beam lithography. These techniques include [1] of crucial importance to the advancement of micro- and nano- microcontact printing (or soft lithography), nanoimprint [2] technology and the nanosciences. The semiconductor industry lithography (NIL), scanning-probe-based techniques (e.g., [3] has been pushing high-precision nanoscale lithography to atomic force microscope lithography), and dip-pen lithogra- [4] manufacture ever-smaller transistors and higher-density inte- phy. A good overview of several of these techniques was [5] grated circuits (ICs). Critical issues, such as resolution, relia- presented in a recent paper. -
Bilayer, Nanoimprint Lithography Brian Faircloth Nuvonyx, Inc., Bridgeton, Missouri 63044 Henry Rohrs Washington University, St
Bilayer, nanoimprint lithography Brian Faircloth Nuvonyx, Inc., Bridgeton, Missouri 63044 Henry Rohrs Washington University, St. Louis, Missouri 63130 Richard Tiberio Cornell University, Ithaca, New York 14853 Rodney Ruoff Washington University, St. Louis, Missouri 63130 Robert R. Krchnaveka) Rowan University, Glassboro, New Jersey 08028 ͑Received 3 May 1999; accepted 21 April 2000͒ Nanoimprint lithography has been shown to be a viable means of patterning polymer films in the sub-100 nm range. In this work, we demonstrate the use of a bilayer resist to facilitate the metal liftoff step in imprinter fabrication. The bilayer resist technology exhibits more uniform patterns and fewer missing features than similar metal nanoparticle arrays fabricated with single layer resist. The bilayer resist relies upon the differential solubility between poly͑methyl methacrylate͒ and poly͑methyl methacrylate methacrylic acid copolymer͒. Evidence is presented that shows the technique has a resolution of better than 10 nm. © 2000 American Vacuum Society. ͓S0734-211X͑00͒03104-8͔ I. INTRODUCTION tion demonstrated in the polymer resist layer. The formation of patterned metal layers is one application. Finely patterned Due to the inevitable transition from the microelectronic metal layers are used as interconnects in integrated circuits. to the nanoelectronic age, the demand for sub-100 nm fea- They can also be used as catalysts for subsequent layer ture sizes in lithographic techniques will increase greatly. As growth. If the subsequent metal layers cannot readily be current devices rapidly approach the 100 nm barrier, the mi- etched, e.g., due to crystalline dependent etching rates, an croelectronics industry is considering several technologies to additive approach such as liftoff is desirable. -
A Review of Current Methods in Microfluidic Device Fabrication And
inventions Review A Review of Current Methods in Microfluidic Device Fabrication and Future Commercialization Prospects Bruce K. Gale * ID , Alexander R. Jafek ID , Christopher J. Lambert ID , Brady L. Goenner, Hossein Moghimifam, Ugochukwu C. Nze ID and Suraj Kumar Kamarapu ID Department of Mechanical Engineering, University of Utah, Salt Lake City, UT 84112, USA; [email protected] (A.R.J.); [email protected] (C.J.L.); [email protected] (B.L.G.); [email protected] (H.M.); [email protected] (U.C.N.); [email protected] (S.K.K.) * Correspondence: [email protected]; Tel.: +1-801-585-5944 Received: 30 June 2018; Accepted: 20 August 2018; Published: 28 August 2018 Abstract: Microfluidic devices currently play an important role in many biological, chemical, and engineering applications, and there are many ways to fabricate the necessary channel and feature dimensions. In this review, we provide an overview of microfabrication techniques that are relevant to both research and commercial use. A special emphasis on both the most practical and the recently developed methods for microfluidic device fabrication is applied, and it leads us to specifically address laminate, molding, 3D printing, and high resolution nanofabrication techniques. The methods are compared for their relative costs and benefits, with special attention paid to the commercialization prospects of the various technologies. Keywords: microfabrication; nanofabrication; microfluidics; nanofluidics; 3D printing; laminates; molding 1. Introduction Microfluidics is a growing field of research which pertains to the manipulation of fluids on the microscale level, and it is identified most commonly by devices with critical dimensions of less than 1 mm. -
Electron Beam Lithography for Nanofabrication
Departament de Física, Facultat de Ciències Universitat Autònoma de Barcelona January 2008 ElectronElectron beambeam lithographylithography forfor NanofabricationNanofabrication PhD Thesis by Gemma Rius Suñé Directed by Francesc Pérez-Murano and Joan Bausells Institut de Microelectrònica de Barcelona -------------------------------------------- The cover image corresponds to a PMMA residual found after the stripping of the resist layer. Even though it seems a new planet, it is 1µm in diameter. -------------------------------------------- This memory reflects part of the work performed at the Nanofabrication Laboratory of the IMB–CNM during the past 5 years, based on Electron Beam Lithography (EBL). Nanofabrication is a very active area of research, as can be noticed from the number of publications that appear continuously and from the number of running R&D projects. Most of the work is realized in the framework of three European research projects. Novopoly project deals with the development of new polymer materials for applications in micro and nano systems. The development of a new EBL resist is framed in this project. Within NaPa, Emerging Nanopatterning methods, the development of NEMS fabrication with EBL is used to realise discrete nanomechanical devices. They are used to characterize the performance of resonating nanostructures and signal enhancement is achieved by their integration in CMOS circuits. The aim of Charpan is the development of a new patterning tool based on several charged particle species. The incidence of charged particle beams on devices is studied to evaluate potential effects induced during fabrication. Carbon nanotube (CNT) based devices contribute to some tasks of national projects Crenatun and Sensonat. In particular, the technology for fabrication of high performance CNT field-effect transistors and their preparation for sensing applications is established. -
Metal and Semiconductor Nanoparticle Self-Assembly
Metal and Semiconductor Nanoparticle Self-Assembly by G. Daniel Lilly A dissertation submitted in partial fulfillment of the requirements for the degree of Doctor of Philosophy (Chemical Engineering) in The University of Michigan 2009 Doctoral Committee: Professor Nicholas A. Kotov, Chair Professor Sharon C. Glotzer Professor Xiaoqing Pan Assistant Professor Suljo Linic © G. Daniel Lilly 2009 To my wife, Michelle M. Lilly, Ph.D. To my mother and father, Nancy N. and G. Bud Lilly ii ACKNOWLEDGEMENTS I would like to thank my loving and lovely wife Michelle for her support through the process of obtaining my Ph.D. If not for her support and advice I most likely would not have finished this process. I value her as a friend and partner and am forever appreciative of her actions. I would also like to thank my parents for laying the groundwork in my life to accomplish this. They taught me the value of hard work and persistence when reaching toward your goals, and without these lessons I most likely would not have even gone to graduate school, much less finished. I am appreciative for all the help and support my fellow lab members have given me over the last five years. Former lab members Jaebeom Lee, Zhiyong Tang, Paul Podsiadlo, Bongsup Ship, Jungwoo Lee and Kevin Critchley helped teach me new lab techniques, NP synthesis and conjugation techniques, and numerous analysis procedures, and allowed me a venue to discuss my hypotheses concerning these approaches. Current lab members Meghan Cuddihy, Edward Jan, Peter Ho, Ashish Agarwal, Christine Andres, Jian Zhu, Huanan Zhang, Elizabeth Stewart, Yichun Wang, Inigo Alvarez, Shimei Xu, and Anna Fernandez aided with various collaborations, techniques, procedures, and experiences for which I am grateful. -
Directed Self-Assembly of Block Copolymers for the Fabrication of Nanomechanical Structures
ADVERTIMENT. Lʼaccés als continguts dʼaquesta tesi queda condicionat a lʼacceptació de les condicions dʼús establertes per la següent llicència Creative Commons: http://cat.creativecommons.org/?page_id=184 ADVERTENCIA. El acceso a los contenidos de esta tesis queda condicionado a la aceptación de las condiciones de uso establecidas por la siguiente licencia Creative Commons: http://es.creativecommons.org/blog/licencias/ WARNING. The access to the contents of this doctoral thesis it is limited to the acceptance of the use conditions set by the following Creative Commons license: https://creativecommons.org/licenses/?lang=en Directed self-assembly of block copolymers for the fabrication of nanomechanical structures Christian Pinto Gómez Dissertation for the degree of Doctor in Electronic and Telecommunication Engineering Advisor: Marta Fernández Regúlez Academic tutor: Joan Bausells Roigé Department of Electronic Engineering Universitat Autònoma de Barcelona 2021 This is to certify that this thesis has been written by Christian Pinto Gómez and is submitted to obtain the degree of Doctor of Philosophy in Electronic and Telecommunication Engineering under guidance and supervision of Dr. Marta Fernández Regúlez (IMB-CNM, CSIC). Advisor: Marta Fernández Regúlez Christian Pinto Gómez Academic tutor: Joan Bausells Roigé i ii Abstract The main goal of this dissertation, entitled “Directed self-assembly of block copolymers for the fabrication of nanomechanical structures”, is to demonstrate the possibility of fabricating nanomechanical functional structures by employing the directed self- assembly (DSA) of block copolymers (BCPs) as a nanopatterning tool. DSA is a bottom-up nanolithography technique based on the ability of BCPs to segregate into domains at the micro/nanoscale, and it has attracted high interest due to its inherent simplicity, high throughput, low cost and potential for sub-10 nm resolution.