Circuit-Level Approaches to Mitigate the Process Variability and Soft Errors in Finfet Logic Cells Alexandra Lackmann Zimpeck

Total Page:16

File Type:pdf, Size:1020Kb

Circuit-Level Approaches to Mitigate the Process Variability and Soft Errors in Finfet Logic Cells Alexandra Lackmann Zimpeck Circuit-level approaches to mitigate the process variability and soft errors in FinFET logic cells Alexandra Lackmann Zimpeck To cite this version: Alexandra Lackmann Zimpeck. Circuit-level approaches to mitigate the process variability and soft errors in FinFET logic cells. Micro and nanotechnologies/Microelectronics. Institut Supérieur de l’Aéronautique et de l’Espace (ISAE); Universidade Federal do Rio Grande do Sul (Brésil), 2019. English. tel-02890418 HAL Id: tel-02890418 https://hal.archives-ouvertes.fr/tel-02890418 Submitted on 6 Jul 2020 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. 5)µ4& &OWVFEFMPCUFOUJPOEV %0$503"5%&-6/*7&34*5²%&506-064& %ÏMJWSÏQBS Institut Supérieur de l’Aéronautique et de l’Espace Universidade Federal do Rio Grande do Sul (Brésil) 1SÏTFOUÏFFUTPVUFOVFQBS Alexandra LACKMANN ZIMPECK le mardi 24 septembre 2019 5JUSF Circuit-level approaches to mitigate the process variability and soft errors in FinFET logic cells Approches au niveau du circuit pour atténuer la variabilité de fabrication et les soft errors dans les cellules logiques FinFET ²DPMF EPDUPSBMF et discipline ou spécialité ED GEET : Micro et nanosystèmes 6OJUÏEFSFDIFSDIF Équipe d'accueil ISAE-ONERA OLIMPES %JSFDUFVS T EFʾÒTF M. Ricardo REIS (directeur de thèse) M. Laurent ARTOLA (co-directeur de thèse) Jury : Mme Lirida NAVINER, Professeur Télécom Paris - Rapporteur, Présidente M. Ricardo REIS, Professeur UFRGS Brésil - Directeur de thèse M. Laurent ARTOLA, Ingénieur de Recherche ONERA - Co-directeur de thèse M. Remi BARBIER, Professeur ISAE-SUPAERO Mme Karine COULIÉ, Maître de Conférences Université Aix-Marseille - Rapporteure M. Marc GALLARDIN, Ingénieur CEA M. Paul LEROUX, Professeur KU Leuven Belgique Mme Cecilia MEZZOMO, Ingénieur Thales Alenia Space Acknowledgments I would like to start by thanking my parents, Alexandre and Dulcinara, for the study encouragements since the earliest stages of my life, for all support provided me to achieve my goals, and for never letting me give up on my dreams. I thank my brother, Lucas, for unconditional love even though sometimes he didn’t understand the reasons for the distance between us. Thank you for always been close to me, even when I have been a few thousand kilometers away from you. I also thank my husband, André Furlan, for your patience, support to achieve my goals and mainly, for accompanying me during my internship in Toulouse. I take the opportunity also to thank all my family and friends who always sent positive vibes for me and understood the several important moments when I could not be present. I would like to thank my colleagues from UFRGS, Gracieli Posser, Calebe Micael, Tania Ferla, Jucemar Monteiro, Felipe Rosa, Walter Calienes, Vitor Bandeira, Geancarlo Abich, Mateus Fogaça, Lucas de Paris, Louise Etcheverry, Vladimir Afonso, Leonardo Brendler, Leonardo Moraes, Pablo Silva, for the friendship, confidence and the countless hours discussing a variety of subjects. My thanks to all my colleagues from ONERA, especially to Raphael Vieira and Neil Rostand for sharing studies, knowledge, and ideas, and Virnigie Inguimbert for helping me understand better the French language. I would thank especially Prof. Cristina Meinhardt for all support in my scientific research since 2010, for the professional partnership on most varied subjects and her friendship during all these years. I want to thank my advisor, Prof. Ricardo Reis, for always believing in my potential and for encouraging me to be better every day. I thank so much Prof. Fernanda Kastensmidt for her collaborations, discussions, and all support given for this work. I also thank Laurent Artola and Guillaume Hubert for the research opportunity and for all knowledge obtained inside of ONERA as well as for providing me a fantastic internship in France. Finally, I would like to thank all the supernatural forces that make us go forward until the end. To all of you, my sincere thanks. 2 Abstract Process variability mitigation and radiation hardness are relevant reliability requirements as chip manufacturing advances more in-depth into the nanometer regime. The parameter yield loss and critical failures on system behavior are the major consequences of these issues. Some related works explore the influence of process variability and single event transients (SET) on the circuits based on FinFET technologies, but there is a lack of approaches to mitigate the effects caused by them. For these reasons, from a design standpoint, considerable efforts should be made to understand and reduce the impacts introduced by reliability challenges. In this regard, the main contributions of this Ph.D. thesis are: 1) to investigate the behavior of FinFET logic cells under process variations and radiation effects; 2) to evaluate four circuit-level approaches to attenuate the impact caused by work-function fluctuations (WFF) and soft errors (SE); 3) to provide an overall comparison between all techniques applied in this work; 4) to trace a trade-off between the gains and penalties of each approach regarding performance, power, area, and SET cross-section. Transistor reordering, decoupling cells, Schmitt Trigger, and sleep transistor are the four circuit-level mitigation techniques explored in this work. The potential of each one to make the logic cells more robust to the process variability and radiation-induced soft errors are assessed comparing the standard version results with the design using each approach. This Ph.D. thesis also establishes the mitigation tendency when different levels of variation, transistor sizing, and radiation particles characteristics such as linear energy transfer (LET) are applied in the design with these techniques. The process variability is evaluated through Monte Carlo (MC) simulations with the WFF modeled as a Gaussian function using SPICE simulations. The SE susceptibility is estimated using the radiation event generator tool MUSCA SEP3 (developed at ONERA), also based on an MC method, which deals both with radiation environment characteristics, layout features and the electrical properties of devices. In general, the proposed approaches improve the state-of-the-art by providing circuit-level options to reduce the process variability effects and SE susceptibility, at fewer penalties and design complexity. The transistor reordering technique can increase the 3 robustness of logic cells under process variations up to 8%, but this method is not favorable for SE mitigation. The insertion of decoupling cells shows interesting outcomes for power variability control with levels of variation above 4%, and it can attenuate until 10% the delay variability considering manufacturing process with 3% of WFF. Depending on the LET, the design with decoupling cells can decrease until 10% of SE susceptibility of logic cells. The use of Schmitt Triggers in the output of FinFET cells can improve the variability sensitivity by up to 50%. The sleep transistor approach improves the power variability reaching around 12% for WFF of 5%, but the advantages of this method to delay variability depends how the transistors are arranged with the sleep transistor in the pull-down network. The addition of a sleep transistor become all logic cells studied free of faults even at the near-threshold regime. In this way, the best approach to mitigate the process variability is the use of Schmitt Triggers, as well as the sleep transistor technique, is the most efficient for the SE mitigation. However, the Schmitt Trigger technique presents the highest penalties in area, performance, and power. Therefore, depending on the application, the sleep transistor or decoupling cells technique can be the most appropriate to mitigate the process variability effects. 4 Resumo A variabilidade de processo e a resistência a radiação são requisitos de confiabilidade relevantes à medida que a fabricação de chips avança mais a fundo no regime nanométrico. A perda de rendimento paramétrico e as falhas críticas no comportamento do sistema são as principais consequências destes problemas. Alguns trabalhos relacionados exploram a influência da variabilidade de processo e dos eventos transientes únicos (SET) nos circuitos projetados nas tecnologias FinFET, mas existe uma ausência de abordagens para mitigar eles. Por estas razões, do ponto de vista de projeto, esforços consideráveis devem ser feitos para entender e reduzir os impactos introduzidos pelos desafios de confiabilidade. Dessa forma, as principais contribuições desta tese de doutorado são: 1) investigar o comportamento de células lógicas FinFET sob variações de processo e efeitos de radiação; 2) avaliar quatro abordagens em nível de circuito para atenuar o impacto causado por flutuações na função trabalho (WFF) and soft errors (SE); 3) fornecer uma comparação global entre todas as técnicas aplicadas neste trabalho; 4) Traçar um balanceamento entre os ganhos e as penalidades de cada abordagem em relação ao desempenho, potência, área, seção transversal SET e largura de pulso SET. Reordenamento de transistores, e o uso de decoupling
Recommended publications
  • Nanolithography Activity in the Group: BG Group and AKR Group Has Extensive Activities in the Area of Nanolithography
    Nanolithography activity in the group: BG group and AKR group has extensive activities in the area of nanolithography. The work is done in a Clean room of the centre which has been established with support from the Nanomission Projects. The clean room is class 10,000 class room which is maintained at class 1000 in specific areas. The facilities in the clean room allow optical lithography, electron beam lithography (EBL) and focused ion beam (FIB) lithography. Visit of the Honourable Union Minister for Science and Technology and Earth rd Science to the Bose Centre Clean room on 3 May, 2015 (Standing in front of Helios machine, 2nd from left ) One of the activities that is carried out on a routine basis is to integrate sub- 100nm nanowire of any material produced by bottom-up approach like chemical route or physical/chemical vapour deposition to a single nanowire device connected to 2 or 4 probes. Integrating the rich materials base of bottom-up approach with nano-lithograhic process is regularly done . For attaching nanowires to prefabricated contact pads for opt-electronic or electronic measurements in addition to EBL –lift off, FIB or Focused electron beam deposited metals (Pt or W) are also used. The group has done extensive work in the area of interface physics. Cross-sectional lamella using ion-beam lithographic technique is done on regular basis. WO 3/Pt/Si 30 µµµm TEM Lamella preparation of a nanowire grown Omni probe lifting off the sample on substrate using Ion-beam lithography Interface analysis of X-TEM Specimen: Partially/non aligned NWs- Interface cross section c Ankita Ghatak, Samik Roy Moulik Barnali Ghosh, RSC Adv.
    [Show full text]
  • Bilayer, Nanoimprint Lithography Brian Faircloth Nuvonyx, Inc., Bridgeton, Missouri 63044 Henry Rohrs Washington University, St
    Bilayer, nanoimprint lithography Brian Faircloth Nuvonyx, Inc., Bridgeton, Missouri 63044 Henry Rohrs Washington University, St. Louis, Missouri 63130 Richard Tiberio Cornell University, Ithaca, New York 14853 Rodney Ruoff Washington University, St. Louis, Missouri 63130 Robert R. Krchnaveka) Rowan University, Glassboro, New Jersey 08028 ͑Received 3 May 1999; accepted 21 April 2000͒ Nanoimprint lithography has been shown to be a viable means of patterning polymer films in the sub-100 nm range. In this work, we demonstrate the use of a bilayer resist to facilitate the metal liftoff step in imprinter fabrication. The bilayer resist technology exhibits more uniform patterns and fewer missing features than similar metal nanoparticle arrays fabricated with single layer resist. The bilayer resist relies upon the differential solubility between poly͑methyl methacrylate͒ and poly͑methyl methacrylate methacrylic acid copolymer͒. Evidence is presented that shows the technique has a resolution of better than 10 nm. © 2000 American Vacuum Society. ͓S0734-211X͑00͒03104-8͔ I. INTRODUCTION tion demonstrated in the polymer resist layer. The formation of patterned metal layers is one application. Finely patterned Due to the inevitable transition from the microelectronic metal layers are used as interconnects in integrated circuits. to the nanoelectronic age, the demand for sub-100 nm fea- They can also be used as catalysts for subsequent layer ture sizes in lithographic techniques will increase greatly. As growth. If the subsequent metal layers cannot readily be current devices rapidly approach the 100 nm barrier, the mi- etched, e.g., due to crystalline dependent etching rates, an croelectronics industry is considering several technologies to additive approach such as liftoff is desirable.
    [Show full text]
  • Reliability Evaluation of Finfet-Based Srams in the Presence of Resistive Defects
    UNIVERSIDADE FEDERAL DO RIO GRANDE DO SUL INSTITUTO DE INFORMÁTICA PROGRAMA DE PÓS-GRADUAÇÃO EM MICROELETRÔNICA THIAGO SANTOS COPETTI Reliability Evaluation of FinFET-based SRAMs in the Presence of Resistive Defects Thesis presented in partial fulfillment of the requirements for the degree of PhD in Microelectronics Advisor: Prof. Dr. Tiago Roberto Balen Coadvisor: Profa. Dra. Letícia Maria Bolzani Poehls Porto Alegre February 2021 CIP — CATALOGING-IN-PUBLICATION Copetti, Thiago Santos Reliability Evaluation of FinFET-based SRAMs in the Pres- ence of Resistive Defects / Thiago Santos Copetti. – Porto Alegre: PGMICRO da UFRGS, 2021. 121 f.: il. Thesis (Ph.D.) – Universidade Federal do Rio Grande do Sul. Programa de Pós-Graduação em Microeletrônica, Porto Alegre, BR–RS, 2021. Advisor: Tiago Roberto Balen; Coadvisor: Letícia Maria Bolzani Poehls. 1. FinFET. 2. SRAM. 3. Resistive Defects. 4. SPICE. 5. TCAD. 6. Reliability. 7. Single Event Transient Modeling. I. Balen, Tiago Roberto. II. Poehls, Letícia Maria Bolzani. III. Tí- tulo. UNIVERSIDADE FEDERAL DO RIO GRANDE DO SUL Reitor: Prof. Carlos André Bulhões Vice-Reitora: Profa. Patricia Helena Lucas Pranke Pró-Reitor de Pós-Graduação: Prof. Júlio Otávio Jardim Barcellos Diretora do Instituto de Informática: Profa. Carla Maria Dal Sasso Freitas Coordenador do PGMICRO: Prof. Tiago Roberto Balen Bibliotecária-chefe do Instituto de Informática: Beatriz Regina Bastos Haro THIAGO SANTOS COPETTI Reliability Evaluation of FinFET-based SRAMs in the Presence of Resistive Defects Orientador: Dr. Tiago Roberto Balen Coorientador: Dra. Letícia Maria Bolzani Poehls Porto Alegre February 2021 DEDICATION I dedicate this work to my wife, my parents, and my siblings. “Nobody told me it was impossible, so I did” —JEAN COCTEAU ACKNOWLEDGMENT Firstly, I would like to thank my advisors and friends, Prof.
    [Show full text]
  • Electron Beam Lithography for Nanofabrication
    Departament de Física, Facultat de Ciències Universitat Autònoma de Barcelona January 2008 ElectronElectron beambeam lithographylithography forfor NanofabricationNanofabrication PhD Thesis by Gemma Rius Suñé Directed by Francesc Pérez-Murano and Joan Bausells Institut de Microelectrònica de Barcelona -------------------------------------------- The cover image corresponds to a PMMA residual found after the stripping of the resist layer. Even though it seems a new planet, it is 1µm in diameter. -------------------------------------------- This memory reflects part of the work performed at the Nanofabrication Laboratory of the IMB–CNM during the past 5 years, based on Electron Beam Lithography (EBL). Nanofabrication is a very active area of research, as can be noticed from the number of publications that appear continuously and from the number of running R&D projects. Most of the work is realized in the framework of three European research projects. Novopoly project deals with the development of new polymer materials for applications in micro and nano systems. The development of a new EBL resist is framed in this project. Within NaPa, Emerging Nanopatterning methods, the development of NEMS fabrication with EBL is used to realise discrete nanomechanical devices. They are used to characterize the performance of resonating nanostructures and signal enhancement is achieved by their integration in CMOS circuits. The aim of Charpan is the development of a new patterning tool based on several charged particle species. The incidence of charged particle beams on devices is studied to evaluate potential effects induced during fabrication. Carbon nanotube (CNT) based devices contribute to some tasks of national projects Crenatun and Sensonat. In particular, the technology for fabrication of high performance CNT field-effect transistors and their preparation for sensing applications is established.
    [Show full text]
  • Estimation of Power Dissipation of CMOS and Finfet Based 6T SRAM Memory M
    et International Journal on Emerging Technologies (Special Issue on ICRIET-2016) 7(2): 347-353(2016) ISSN No. (Print) : 0975-8364 ISSN No. (Online) : 2249-3255 Estimation of Power Dissipation of CMOS and finFET based 6T SRAM Memory M. R. Govind * and Chetan Alatagi** *Asst Prof, Department of Electronics and Communication Engineering, VSMIT, Nipani, Karanataka, India ** Asst Prof, Department of Electronics and Communication Engineering, VSMIT, Nipani, Karanataka, India (Corresponding author : M. R. Govind) (Received 28 September, 2016 Accepted 29 October, 2016) (Published by Research Trend, Website: www.researchtrend.net) ABSTRACT: This paper provides the estimation of power dissipation of CMOS and finFET based 6T SRAM Memory. CMOS expertise feature size and threshold voltage have been scaling down for decades for achieving high density and high performance. The continuing reduce in the feature size and the corresponding increases in chip density and operating frequency have made power consumption a major concern in VLSI design. Extreme power dissipation in integrated circuits discourages their use in moveable systems. Low threshold voltage also results in enlarged sub-threshold leakage current because transistors cannot be turned off completely. For these reasons, leakage power dissipation , has become a major part of total power consumption for current and future silicon technologies. FinFET evolving to be a promising technology in this regard .In this the designing, modeling and optimizing the 6-T SRAM cell device is done. Keywords: CMOS, FinFET, Static RAM, Read/Write, Sense Amplifier nanometer process technologies have advanced, Chip I. INTRODUCTION density and operating frequency have increased, that It is found that FinFET-based 6T SRAM cells designed makes power burning up in battery operated portable with built in feedback realize significant improvements devices a major concern.
    [Show full text]
  • Large-Area Nanoimprint Lithography and Applications
    Chapter 3 Large-Area Nanoimprint Lithography and Applications Hongbo Lan Additional information is available at the end of the chapter http://dx.doi.org/10.5772/intechopen.72860 Abstract Large-area nanoimprint lithography (NIL) has been regarded as one of the most prom- ising micro/nano-manufacturing technologies for mass production of large-area micro/ nanoscale patterns and complex 3D structures and high aspect ratio features with low cost, high throughput, and high resolution. That opens the door and paves the way for many commercial applications not previously conceptualized or economically feasible. Great progresses in large-area nanoimprint lithography have been achieved in recent years. This chapter mainly presents a comprehensive review of recent advances in large- area NIL processes. Some promising solutions of large-area NIL and emerging methods, which can implement mass production of micro-and nanostructures over large areas on various substrates or surfaces, are described in detail. Moreover, numerous industrial- level applications and innovative products based on large-area NIL are also demon- strated. Finally, prospects, challenges, and future directions for industrial scale large- area NIL are addressed. An infrastructure of large-area nanoimprint lithography is proposed. In addition, some recent progresses and research activities in large-area NIL suitable for high volume manufacturing environments from our Labs are also intro- duced. This chapter may provide a reference and direction for the further explorations and studies of large-area micro/nanopatterning technologies. Keywords: large-area nanoimprint lithography, large-area micro/nanopatterning, full wafer NIL, roller-type NIL, roll-to-plate NIL, roll-to-roll NIL 1.
    [Show full text]
  • SPM Nanolithography Workshop
    NISTIR 7040 Workshop Summary Report: Scanning Probe Nanolithography Workshop A workshop sponsored by the Precision Engineering Division, Manufacturing Engineering Laboratory, NIST, under a Research Cooperation Agreement on advanced lithography of functional nanostructures signed in 2001 by the National Microelectronics Center of Spain (CNM), the National Institute of Advanced Industrial Science & Technology (AIST) of Japan, and NIST. John A. Dagata National Institute of Standards & held at Technology NIST, Gaithersburg MD 20899 Hiroshi Yokoyama on National Institute of Advanced November 12 – 13, 2002 Industrial Science & Technology of Japan Francesc Perez-Murano National Microelectronics Center of Spain U.S. DEPARTMENT OF COMMERCE Technology Administration National Institute of Standards & Technology Manufacturing Engineering Laboratory Gaithersburg MD 20899 January 2003 2 EXECUTIVE SUMMARY A workshop on Scanning Probe Microscope (SPM)-based Nanolithography was held at NIST Gaithersburg on November 24-25, 2002. The meeting was sponsored by the Precision Engineering Division, Manufacturing Engineering Laboratory, NIST, under a Research Cooperation Agreement on advanced lithography of functional nanostructures signed in 2001 by the National Microelectronics Center of Spain (CNM), the National Institute of Advanced Industrial Science & Technology (AIST) of Japan, and NIST. The workshop program focused on fundamental studies in nanoscience, the kinetics and modeling of SPM oxidation, and applications to nanotechnology, Fundamental studies included discussions of current measurement during SPM oxidation, measurement of charge & density variation in SPM oxides, control & understanding of the meniscus shape, and 3-D multiphysics modeling of electrostatics, transport, and chemical reaction during SPM oxidation. Applications to nanotechnology included the fabrication of nano-electronics, nano-photonics, nano- electromechanical, and microfluidic devices and systems.
    [Show full text]
  • Introducing 10-Nm Finfet Technology in Microwind Etienne Sicard
    Introducing 10-nm FinFET technology in Microwind Etienne Sicard To cite this version: Etienne Sicard. Introducing 10-nm FinFET technology in Microwind. 2017. hal-01551695 HAL Id: hal-01551695 https://hal.archives-ouvertes.fr/hal-01551695 Submitted on 30 Jun 2017 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. APPLICATION NOTE 10 nm technology Introducing 10-nm FinFET technology in Microwind Etienne SICARD Professor INSA-Dgei, 135 Av de Rangueil 31077 Toulouse – France www.microwind.org email: [email protected] This paper describes the implementation of a high performance FinFET-based 10-nm CMOS Technology in Microwind. New concepts related to the design of FinFET and design for manufacturing are also described. The performances of a ring oscillator layout and a 6-transistor RAM memory layout are also analyzed. 1. Technology Roadmap Several companies and research centers have released details on the 14-nm CMOS technology, as a major step for improved integration and performances, with the target of 7-nm process by 2020. We recall in
    [Show full text]
  • The Impact of China's Policies on Global Semiconductor
    Moore’s Law Under Attack: The Impact of China’s Policies on Global Semiconductor Innovation STEPHEN EZELL | FEBRUARY 2021 China’s mercantilist strategy to grab market share in the global semiconductor industry is fueling the rise of inferior innovators at the expense of superior firms in the United States and other market-led economies. That siphons away resources that would otherwise be invested in the virtuous cycle of cutting-edge R&D that has driven semiconductor innovation for decades. KEY TAKEAWAYS ▪ No industry has an innovation dynamic quite like the semiconductor industry, where “Moore’s Law” has held for decades: The number of transistors on a microchip doubles about every two years, producing twice the processing power at half the cost. ▪ The pattern persists because the semiconductor industry vies with biopharmaceuticals to be the world’s most R&D-intensive industry—a virtuous cycle that depends on one generation of innovation to finance investment in the next. ▪ To continue heavy investment in R&D and CapEx, semiconductor firms need access to large global markets where they can compete on fair terms to amortize and recoup their costs. When they face excess, non-market-based competition, innovation suffers. ▪ China’s state-directed strategy to vault into a leadership position in the semiconductor industry distorts the global market with massive subsidization, IP theft, state-financed foreign firm acquisitions, and other mercantilist practices. ▪ Inferior innovators thus have a leg up—and the global semiconductor innovation curve is bending downward. In fact, ITIF estimates there would be 5,100 more U.S. patents in the industry annually if not for China’s innovation mercantilist policies.
    [Show full text]
  • And Nanolithography Techniques and Their Applications
    Review on Micro- and Nanolithography Techniques and their Applications Alongkorn Pimpin* and Werayut Srituravanich** Department of Mechanical Engineering, Faculty of Engineering, Chulalongkorn University, Pathumwan, Bangkok 10330, Thailand E-mail: [email protected]*, [email protected]** Abstract. This article reviews major micro- and nanolithography techniques and their applications from commercial micro devices to emerging applications in nanoscale science and engineering. Micro- and nanolithography has been the key technology in manufacturing of integrated circuits and microchips in the semiconductor industry. Such a technology is also sparking revolutionizing advancements in nanotechnology. The lithography techniques including photolithography, electron beam lithography, focused ion beam lithography, soft lithography, nanoimprint lithography and scanning probe lithography are discussed. Furthermore, their applications are summarized into four major areas: electronics and microsystems, medical and biotech, optics and photonics, and environment and energy harvesting. Keywords: Nanolithography, photolithography, electron beam lithography, focused ion beam lithography, soft lithography, nanoimprint lithography, scanning probe lithography, dip-pen lithography, microsystems, MEMS, nanoscience, nanotechnology, nano-engineering. ENGINEERING JOURNAL Volume 16 Issue 1 Received 18 August 2011 Accepted 8 November Published 1 January 2012 Online at http://www.engj.org DOI:10.4186/ej.2012.16.1.37 DOI:10.4186/ej.2012.16.1.37 1. Introduction For decades, micro- and nanolithography technology has been contributed to the manufacturing of integrated circuits (ICs) and microchips. This advance in the semiconductor and IC industry has led to a new paradigm of the information revolution via computers and the internet. Micro- and nanolithography is the technology that is used to create patterns with a feature size ranging from a few nanometers up to tens of millimeters.
    [Show full text]
  • Lecture 25: Enhancement Type MOSFET Operation, P-Channel, and CMOS
    Whites, EE 320 Lecture 25 Page 1 of 11 Lecture 25: Enhancement Type MOSFET Operation, P-channel, and CMOS. We will now move on to the second major type of transistor called the field effect transistor (FET). In particular, we will examine in detail the metal oxide semiconductor FET (MOSFET). This is an extremely popular type of transistor. MOSFETs have similar uses as BJTs. They can be used as signal amplifiers and electronic switches, for example. MOSFETS can be manufactured using a relatively simple process and made very small with respect to BJTs. There are two major types of MOSFETS, called enhancement type and depletion type. Each of these types can be manufactured with a so-called n channel or p channel: © 2017 Keith W. Whites Whites, EE 320 Lecture 25 Page 2 of 11 Enhancement Type, N Channel MOSFET The enhancement type MOSFET is the most widely used FET. It finds extensive use in VLSI circuits, for example. (In general, MOSFETs are not used too often in discrete component design.) The physical structure of this type of MOSFET (enhancement type NMOS) is shown in Fig. 5.1: (Fig. 5.1a) Four Terminals: “n+” means heavily doped Often the body and source are connected. (Fig. 5.1b) Whites, EE 320 Lecture 25 Page 3 of 11 Typical dimensional values are L = 0.1 to 3 m, W = 0.2 to 100 m, and tox = 2 to 50 nm. The minimum L and W dimensions are dictated by the resolution of the lithography process used to create the device. Around the 2007 time frame, Intel developed a 45-nm process, as described in the attached article from IEEE Spectrum.
    [Show full text]
  • Page 1 Last Updated June 02, 2016 Title Dr. First Name Manoj Last Name Saxena Photograph Designation Associate Prof
    Last Updated June 02, 2016 Title Dr. First Name Manoj Last Name Saxena Photograph Designation Associate Professor Address Department of Electronics Deen Dayal Upadhyaya College University of Delhi Karampura, New Delhi-110015, India Phone No Office 011 -25458173 Residence 011 -28531418 Mobile 09968393104 Email [email protected], [email protected] Web -Page Education al Qualification s Degree Institution Year Ph.D. Electronics University of Delhi 2006 M. Sc. Electronics University of Delhi 2000 (Gold Medalist ) B. Sc. (H) Electronics University of Delhi 1998 Career Profile • Lecturer, Department of Electronics, Deen Dayal Upadhyaya College, University of Delhi (August 2000 - December 2005) • Assistant Professor, Department of Electronics, Deen Dayal Upadhyaya College, University of Delhi (01/01/2006 – 26/08/2006) • Assistant Professor (Senior Lecturer), Department of Electronics, Deen Dayal Upadhyaya College, University of Delhi (27/08/2006 – 26/08/2009) • Assistant Professor (Reader), Department of Electronics, Deen Dayal Upadhyaya College, University of Delhi (27/08/2009 - Till Date) • Associate Professor, Department of Electronics, Deen Dayal Upadhyaya College, University of Delhi (27/08/2012 - Till Date) Administrative Assignments Year 20 16 – 2017 • Convener-Research Centre • Convener – Science Foundation • Convener – College Research Committee • Convener – Website Committee • Convener – Career Counseling and Placement Cell • Convener – India Today NIELSEN Survey Committee for Science, Commerce and Arts • Election Officer
    [Show full text]