Circuit-Level Approaches to Mitigate the Process Variability and Soft Errors in Finfet Logic Cells
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Nanolithography Activity in the Group: BG Group and AKR Group Has Extensive Activities in the Area of Nanolithography
Nanolithography activity in the group: BG group and AKR group has extensive activities in the area of nanolithography. The work is done in a Clean room of the centre which has been established with support from the Nanomission Projects. The clean room is class 10,000 class room which is maintained at class 1000 in specific areas. The facilities in the clean room allow optical lithography, electron beam lithography (EBL) and focused ion beam (FIB) lithography. Visit of the Honourable Union Minister for Science and Technology and Earth rd Science to the Bose Centre Clean room on 3 May, 2015 (Standing in front of Helios machine, 2nd from left ) One of the activities that is carried out on a routine basis is to integrate sub- 100nm nanowire of any material produced by bottom-up approach like chemical route or physical/chemical vapour deposition to a single nanowire device connected to 2 or 4 probes. Integrating the rich materials base of bottom-up approach with nano-lithograhic process is regularly done . For attaching nanowires to prefabricated contact pads for opt-electronic or electronic measurements in addition to EBL –lift off, FIB or Focused electron beam deposited metals (Pt or W) are also used. The group has done extensive work in the area of interface physics. Cross-sectional lamella using ion-beam lithographic technique is done on regular basis. WO 3/Pt/Si 30 µµµm TEM Lamella preparation of a nanowire grown Omni probe lifting off the sample on substrate using Ion-beam lithography Interface analysis of X-TEM Specimen: Partially/non aligned NWs- Interface cross section c Ankita Ghatak, Samik Roy Moulik Barnali Ghosh, RSC Adv. -
Bilayer, Nanoimprint Lithography Brian Faircloth Nuvonyx, Inc., Bridgeton, Missouri 63044 Henry Rohrs Washington University, St
Bilayer, nanoimprint lithography Brian Faircloth Nuvonyx, Inc., Bridgeton, Missouri 63044 Henry Rohrs Washington University, St. Louis, Missouri 63130 Richard Tiberio Cornell University, Ithaca, New York 14853 Rodney Ruoff Washington University, St. Louis, Missouri 63130 Robert R. Krchnaveka) Rowan University, Glassboro, New Jersey 08028 ͑Received 3 May 1999; accepted 21 April 2000͒ Nanoimprint lithography has been shown to be a viable means of patterning polymer films in the sub-100 nm range. In this work, we demonstrate the use of a bilayer resist to facilitate the metal liftoff step in imprinter fabrication. The bilayer resist technology exhibits more uniform patterns and fewer missing features than similar metal nanoparticle arrays fabricated with single layer resist. The bilayer resist relies upon the differential solubility between poly͑methyl methacrylate͒ and poly͑methyl methacrylate methacrylic acid copolymer͒. Evidence is presented that shows the technique has a resolution of better than 10 nm. © 2000 American Vacuum Society. ͓S0734-211X͑00͒03104-8͔ I. INTRODUCTION tion demonstrated in the polymer resist layer. The formation of patterned metal layers is one application. Finely patterned Due to the inevitable transition from the microelectronic metal layers are used as interconnects in integrated circuits. to the nanoelectronic age, the demand for sub-100 nm fea- They can also be used as catalysts for subsequent layer ture sizes in lithographic techniques will increase greatly. As growth. If the subsequent metal layers cannot readily be current devices rapidly approach the 100 nm barrier, the mi- etched, e.g., due to crystalline dependent etching rates, an croelectronics industry is considering several technologies to additive approach such as liftoff is desirable. -
Reliability Evaluation of Finfet-Based Srams in the Presence of Resistive Defects
UNIVERSIDADE FEDERAL DO RIO GRANDE DO SUL INSTITUTO DE INFORMÁTICA PROGRAMA DE PÓS-GRADUAÇÃO EM MICROELETRÔNICA THIAGO SANTOS COPETTI Reliability Evaluation of FinFET-based SRAMs in the Presence of Resistive Defects Thesis presented in partial fulfillment of the requirements for the degree of PhD in Microelectronics Advisor: Prof. Dr. Tiago Roberto Balen Coadvisor: Profa. Dra. Letícia Maria Bolzani Poehls Porto Alegre February 2021 CIP — CATALOGING-IN-PUBLICATION Copetti, Thiago Santos Reliability Evaluation of FinFET-based SRAMs in the Pres- ence of Resistive Defects / Thiago Santos Copetti. – Porto Alegre: PGMICRO da UFRGS, 2021. 121 f.: il. Thesis (Ph.D.) – Universidade Federal do Rio Grande do Sul. Programa de Pós-Graduação em Microeletrônica, Porto Alegre, BR–RS, 2021. Advisor: Tiago Roberto Balen; Coadvisor: Letícia Maria Bolzani Poehls. 1. FinFET. 2. SRAM. 3. Resistive Defects. 4. SPICE. 5. TCAD. 6. Reliability. 7. Single Event Transient Modeling. I. Balen, Tiago Roberto. II. Poehls, Letícia Maria Bolzani. III. Tí- tulo. UNIVERSIDADE FEDERAL DO RIO GRANDE DO SUL Reitor: Prof. Carlos André Bulhões Vice-Reitora: Profa. Patricia Helena Lucas Pranke Pró-Reitor de Pós-Graduação: Prof. Júlio Otávio Jardim Barcellos Diretora do Instituto de Informática: Profa. Carla Maria Dal Sasso Freitas Coordenador do PGMICRO: Prof. Tiago Roberto Balen Bibliotecária-chefe do Instituto de Informática: Beatriz Regina Bastos Haro THIAGO SANTOS COPETTI Reliability Evaluation of FinFET-based SRAMs in the Presence of Resistive Defects Orientador: Dr. Tiago Roberto Balen Coorientador: Dra. Letícia Maria Bolzani Poehls Porto Alegre February 2021 DEDICATION I dedicate this work to my wife, my parents, and my siblings. “Nobody told me it was impossible, so I did” —JEAN COCTEAU ACKNOWLEDGMENT Firstly, I would like to thank my advisors and friends, Prof. -
Electron Beam Lithography for Nanofabrication
Departament de Física, Facultat de Ciències Universitat Autònoma de Barcelona January 2008 ElectronElectron beambeam lithographylithography forfor NanofabricationNanofabrication PhD Thesis by Gemma Rius Suñé Directed by Francesc Pérez-Murano and Joan Bausells Institut de Microelectrònica de Barcelona -------------------------------------------- The cover image corresponds to a PMMA residual found after the stripping of the resist layer. Even though it seems a new planet, it is 1µm in diameter. -------------------------------------------- This memory reflects part of the work performed at the Nanofabrication Laboratory of the IMB–CNM during the past 5 years, based on Electron Beam Lithography (EBL). Nanofabrication is a very active area of research, as can be noticed from the number of publications that appear continuously and from the number of running R&D projects. Most of the work is realized in the framework of three European research projects. Novopoly project deals with the development of new polymer materials for applications in micro and nano systems. The development of a new EBL resist is framed in this project. Within NaPa, Emerging Nanopatterning methods, the development of NEMS fabrication with EBL is used to realise discrete nanomechanical devices. They are used to characterize the performance of resonating nanostructures and signal enhancement is achieved by their integration in CMOS circuits. The aim of Charpan is the development of a new patterning tool based on several charged particle species. The incidence of charged particle beams on devices is studied to evaluate potential effects induced during fabrication. Carbon nanotube (CNT) based devices contribute to some tasks of national projects Crenatun and Sensonat. In particular, the technology for fabrication of high performance CNT field-effect transistors and their preparation for sensing applications is established. -
Large-Area Nanoimprint Lithography and Applications
Chapter 3 Large-Area Nanoimprint Lithography and Applications Hongbo Lan Additional information is available at the end of the chapter http://dx.doi.org/10.5772/intechopen.72860 Abstract Large-area nanoimprint lithography (NIL) has been regarded as one of the most prom- ising micro/nano-manufacturing technologies for mass production of large-area micro/ nanoscale patterns and complex 3D structures and high aspect ratio features with low cost, high throughput, and high resolution. That opens the door and paves the way for many commercial applications not previously conceptualized or economically feasible. Great progresses in large-area nanoimprint lithography have been achieved in recent years. This chapter mainly presents a comprehensive review of recent advances in large- area NIL processes. Some promising solutions of large-area NIL and emerging methods, which can implement mass production of micro-and nanostructures over large areas on various substrates or surfaces, are described in detail. Moreover, numerous industrial- level applications and innovative products based on large-area NIL are also demon- strated. Finally, prospects, challenges, and future directions for industrial scale large- area NIL are addressed. An infrastructure of large-area nanoimprint lithography is proposed. In addition, some recent progresses and research activities in large-area NIL suitable for high volume manufacturing environments from our Labs are also intro- duced. This chapter may provide a reference and direction for the further explorations and studies of large-area micro/nanopatterning technologies. Keywords: large-area nanoimprint lithography, large-area micro/nanopatterning, full wafer NIL, roller-type NIL, roll-to-plate NIL, roll-to-roll NIL 1. -
SPM Nanolithography Workshop
NISTIR 7040 Workshop Summary Report: Scanning Probe Nanolithography Workshop A workshop sponsored by the Precision Engineering Division, Manufacturing Engineering Laboratory, NIST, under a Research Cooperation Agreement on advanced lithography of functional nanostructures signed in 2001 by the National Microelectronics Center of Spain (CNM), the National Institute of Advanced Industrial Science & Technology (AIST) of Japan, and NIST. John A. Dagata National Institute of Standards & held at Technology NIST, Gaithersburg MD 20899 Hiroshi Yokoyama on National Institute of Advanced November 12 – 13, 2002 Industrial Science & Technology of Japan Francesc Perez-Murano National Microelectronics Center of Spain U.S. DEPARTMENT OF COMMERCE Technology Administration National Institute of Standards & Technology Manufacturing Engineering Laboratory Gaithersburg MD 20899 January 2003 2 EXECUTIVE SUMMARY A workshop on Scanning Probe Microscope (SPM)-based Nanolithography was held at NIST Gaithersburg on November 24-25, 2002. The meeting was sponsored by the Precision Engineering Division, Manufacturing Engineering Laboratory, NIST, under a Research Cooperation Agreement on advanced lithography of functional nanostructures signed in 2001 by the National Microelectronics Center of Spain (CNM), the National Institute of Advanced Industrial Science & Technology (AIST) of Japan, and NIST. The workshop program focused on fundamental studies in nanoscience, the kinetics and modeling of SPM oxidation, and applications to nanotechnology, Fundamental studies included discussions of current measurement during SPM oxidation, measurement of charge & density variation in SPM oxides, control & understanding of the meniscus shape, and 3-D multiphysics modeling of electrostatics, transport, and chemical reaction during SPM oxidation. Applications to nanotechnology included the fabrication of nano-electronics, nano-photonics, nano- electromechanical, and microfluidic devices and systems. -
Introducing 10-Nm Finfet Technology in Microwind Etienne Sicard
Introducing 10-nm FinFET technology in Microwind Etienne Sicard To cite this version: Etienne Sicard. Introducing 10-nm FinFET technology in Microwind. 2017. hal-01551695 HAL Id: hal-01551695 https://hal.archives-ouvertes.fr/hal-01551695 Submitted on 30 Jun 2017 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. APPLICATION NOTE 10 nm technology Introducing 10-nm FinFET technology in Microwind Etienne SICARD Professor INSA-Dgei, 135 Av de Rangueil 31077 Toulouse – France www.microwind.org email: [email protected] This paper describes the implementation of a high performance FinFET-based 10-nm CMOS Technology in Microwind. New concepts related to the design of FinFET and design for manufacturing are also described. The performances of a ring oscillator layout and a 6-transistor RAM memory layout are also analyzed. 1. Technology Roadmap Several companies and research centers have released details on the 14-nm CMOS technology, as a major step for improved integration and performances, with the target of 7-nm process by 2020. We recall in -
The Impact of China's Policies on Global Semiconductor
Moore’s Law Under Attack: The Impact of China’s Policies on Global Semiconductor Innovation STEPHEN EZELL | FEBRUARY 2021 China’s mercantilist strategy to grab market share in the global semiconductor industry is fueling the rise of inferior innovators at the expense of superior firms in the United States and other market-led economies. That siphons away resources that would otherwise be invested in the virtuous cycle of cutting-edge R&D that has driven semiconductor innovation for decades. KEY TAKEAWAYS ▪ No industry has an innovation dynamic quite like the semiconductor industry, where “Moore’s Law” has held for decades: The number of transistors on a microchip doubles about every two years, producing twice the processing power at half the cost. ▪ The pattern persists because the semiconductor industry vies with biopharmaceuticals to be the world’s most R&D-intensive industry—a virtuous cycle that depends on one generation of innovation to finance investment in the next. ▪ To continue heavy investment in R&D and CapEx, semiconductor firms need access to large global markets where they can compete on fair terms to amortize and recoup their costs. When they face excess, non-market-based competition, innovation suffers. ▪ China’s state-directed strategy to vault into a leadership position in the semiconductor industry distorts the global market with massive subsidization, IP theft, state-financed foreign firm acquisitions, and other mercantilist practices. ▪ Inferior innovators thus have a leg up—and the global semiconductor innovation curve is bending downward. In fact, ITIF estimates there would be 5,100 more U.S. patents in the industry annually if not for China’s innovation mercantilist policies. -
And Nanolithography Techniques and Their Applications
Review on Micro- and Nanolithography Techniques and their Applications Alongkorn Pimpin* and Werayut Srituravanich** Department of Mechanical Engineering, Faculty of Engineering, Chulalongkorn University, Pathumwan, Bangkok 10330, Thailand E-mail: [email protected]*, [email protected]** Abstract. This article reviews major micro- and nanolithography techniques and their applications from commercial micro devices to emerging applications in nanoscale science and engineering. Micro- and nanolithography has been the key technology in manufacturing of integrated circuits and microchips in the semiconductor industry. Such a technology is also sparking revolutionizing advancements in nanotechnology. The lithography techniques including photolithography, electron beam lithography, focused ion beam lithography, soft lithography, nanoimprint lithography and scanning probe lithography are discussed. Furthermore, their applications are summarized into four major areas: electronics and microsystems, medical and biotech, optics and photonics, and environment and energy harvesting. Keywords: Nanolithography, photolithography, electron beam lithography, focused ion beam lithography, soft lithography, nanoimprint lithography, scanning probe lithography, dip-pen lithography, microsystems, MEMS, nanoscience, nanotechnology, nano-engineering. ENGINEERING JOURNAL Volume 16 Issue 1 Received 18 August 2011 Accepted 8 November Published 1 January 2012 Online at http://www.engj.org DOI:10.4186/ej.2012.16.1.37 DOI:10.4186/ej.2012.16.1.37 1. Introduction For decades, micro- and nanolithography technology has been contributed to the manufacturing of integrated circuits (ICs) and microchips. This advance in the semiconductor and IC industry has led to a new paradigm of the information revolution via computers and the internet. Micro- and nanolithography is the technology that is used to create patterns with a feature size ranging from a few nanometers up to tens of millimeters. -
Lecture 25: Enhancement Type MOSFET Operation, P-Channel, and CMOS
Whites, EE 320 Lecture 25 Page 1 of 11 Lecture 25: Enhancement Type MOSFET Operation, P-channel, and CMOS. We will now move on to the second major type of transistor called the field effect transistor (FET). In particular, we will examine in detail the metal oxide semiconductor FET (MOSFET). This is an extremely popular type of transistor. MOSFETs have similar uses as BJTs. They can be used as signal amplifiers and electronic switches, for example. MOSFETS can be manufactured using a relatively simple process and made very small with respect to BJTs. There are two major types of MOSFETS, called enhancement type and depletion type. Each of these types can be manufactured with a so-called n channel or p channel: © 2017 Keith W. Whites Whites, EE 320 Lecture 25 Page 2 of 11 Enhancement Type, N Channel MOSFET The enhancement type MOSFET is the most widely used FET. It finds extensive use in VLSI circuits, for example. (In general, MOSFETs are not used too often in discrete component design.) The physical structure of this type of MOSFET (enhancement type NMOS) is shown in Fig. 5.1: (Fig. 5.1a) Four Terminals: “n+” means heavily doped Often the body and source are connected. (Fig. 5.1b) Whites, EE 320 Lecture 25 Page 3 of 11 Typical dimensional values are L = 0.1 to 3 m, W = 0.2 to 100 m, and tox = 2 to 50 nm. The minimum L and W dimensions are dictated by the resolution of the lithography process used to create the device. Around the 2007 time frame, Intel developed a 45-nm process, as described in the attached article from IEEE Spectrum. -
Silicon and Silicide Nanowires
S “This book contains a collection of the most recent studies written by highly recognized and ilicon authors in the field. The book is valuable especially for young scientists seeking inspiration from the most fascinating discoveries in the field. The book can also serve an excellent reference for experts.” Prof. Vassilios Vargiamidis Concordia University, Montreal, Canada Nanoscale materials are showing great promise in various electronic, optoelectronic, and energy applications. Silicon (Si) has especially captured great attention as the leading material for microelectronic and nanoscale device applications. Recently, various silicides have garnered special attention for their pivotal role in Si device engineering and for the vast potential they possess in fields such as thermoelectricity and magnetism. The fundamental understanding of Si and silicide material processes at nanoscale plays a key role in achieving device structures and performance that meet S real-world requirements and, therefore, demands investigation and exploration of nanoscale device applications. This book comprises the theoretical and experimental ilicide analysis of various properties of silicon nanocrystals, research methods and techniques to prepare them, and some of their promising applications. Yu Huang is a faculty member in the Department of Materials Sciences and Engineering at the University of California, Los Angeles (UCLA), USA. She received her PhD in physical chemistry from Harvard University, USA. Her research focuses on the fundamental principles governing nanoscale material synthesis and assembly at the molecular N edited by level, which can be utilized to design nanostructures and nanodevices with unique functions and properties to address critical challenges in anowires Yu Huang electronics, energy science, and biomedicine. -
Extreme Ultraviolet Photoelectron Spectroscopy on Fluorinated Monolayers: Towards Nanolithography on Monolayers
Journal of Photopolymer Science and Technology Volume 33, Number 2 (2020) 229 -234 Ⓒ 2020SPST Communication Extreme Ultraviolet Photoelectron Spectroscopy on Fluorinated Monolayers: towards Nanolithography on Monolayers Olivier Lugier1, Alessandro Troglia1, Najmeh Sadegh1, Luc van Kessel2, Roland Bliem1,3, Nicola Mahne4, Stefano Nannarone4, and Sonia Castellanos1* 1Advanced Research Center for Nanolithography, Science Park 106, 1098XG Amsterdam, the Netherlands 2 Delft University of Technology, Department of Imaging Physics, Lorentzweg 1, 2628 CJ Delft, The Netherlands 3 Institute of Physics, University of Amsterdam, Science Park 904, 1098XH Amsterdam, The Netherlands 4 CNR-IOM, 34149 Trieste, Italy *[email protected] The semiconductor industry plans to keep fabricating integrated circuits, progressively decreasing there features size, by employing extreme ultraviolet lithography (EUVL). With this method, new designs and concepts for photoresist materials need to be conceived. In this work, we explore an alternative concept to the classic photoresist material by using an organic self-assembled monolayer (SAM) on a gold substrate. The monolayer, composed of a richly fluorinated thiol sensitive to low-energy electrons, is adsorbed on the Au substrate which acts as main EUV-absorber and as the source of photoelectrons and secondary electrons. We investigate the stability of the SAM adsorbed on gold towards EUV radiation by means of in-situ photoelectron spectroscopy. The photoelectron spectra indicate that the monolayer attenuates a significant amount of primary electrons generated in the gold layer. The spectral evolution upon EUV irradiation indicates that the SAM loses a significant amount of its initial fluorine content (ca. 40% at 200 mJ/cm2). We attribute these chemical changes mostly to the interaction with the electrons generated in the thiol/Au system.