3-D System Integration of Processor and Multi-Stacked Srams Using
856 IEEE JOURNAL OF SOLID-STATE CIRCUITS, VOL. 45, NO. 4, APRIL 2010 3-D System Integration of Processor and Multi-Stacked SRAMs Using Inductive-Coupling Link Makoto Saen, Kenichi Osada, Member, IEEE, Yasuyuki Okuma, Kiichi Niitsu, Member, IEEE, Yasuhisa Shimazaki, Member, IEEE, Yasufumi Sugimori, Yoshinori Kohama, Kazutaka Kasuga, Itaru Nonomura, Naohiko Irie, Toshihiro Hattori, Member, IEEE, Atsushi Hasegawa, and Tadahiro Kuroda, Fellow, IEEE Abstract—This paper describes a three-dimensional (3-D) and wireless) have been proposed [1]–[10]. A major wired-in- system integration of a full-fledged processor chip and two terconnect technique is through-silicon via (TSV) [6]–[10]. The memory chips using inductive coupling. To attain a 3-D commu- density of 3-D inter-chip connections can near that of on-chip nication link with a smaller area and lower power-consumption, shortening the link distance and preventing signal degradation wires when using the TSV technique. However, it increases due to unused inductors are important challenges. Therefore, cost of chip fabrication due to increase of fabrication-process we developed a new 3D-integrated wire-penetrated multi-layer complexity. On the other hand, inductive coupling [1]–[4], a structure for a shorter link distance and an open-skipped-inductor major wireless-interconnect technique, does not increase the scheme for suppressing signal degradation. In addition, to avoid process complexity because inductors for inductive coupling undefined-value propagation in stacking multi-memories using an inductive-coupling link, we proposed a memory-access-control are formed using metal layers of standard CMOS process. scheme with a pinpoint-data-capture scheme.
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