DOCSLIB.ORG

Three-Dimensional Integrated Circuits: Design, EDA, and Architecture Full Text Available At

Total Page：16

File Type：pdf, Size：1020Kb

Download full-text PDF Read full-text

Load more

Full text available at: http://dx.doi.org/10.1561/1000000016 Three-dimensional Integrated Circuits: Design, EDA, and Architecture Full text available at: http://dx.doi.org/10.1561/1000000016 Three-dimensional Integrated Circuits: Design, EDA, and Architecture Guangyu Sun Yibo Chen Xiangyu Dong Jin Ouyang Yuan Xie Pennsylvania State University USA fgsun, yxc236, xydong, jouyang, [email protected] Boston { Delft Full text available at: http://dx.doi.org/10.1561/1000000016 Foundations and Trends R in Electronic Design Automation Published, sold and distributed by: now Publishers Inc. PO Box 1024 Hanover, MA 02339 USA Tel. +1-781-985-4510 www.nowpublishers.com [email protected] Outside North America: now Publishers Inc. PO Box 179 2600 AD Delft The Netherlands Tel. +31-6-51115274 The preferred citation for this publication is G. Sun, Y. Chen, X. Dong, J. Ouyang and Y. Xie, Three-dimensional Integrated Circuits: Design, EDA, and Architec- ture, Foundations and Trends R in Electronic Design Automation, vol 5, nos 1{2, pp 1{151, 2011 ISBN: 978-1-60198-462-3 c 2011 G. Sun, Y. Chen, X. Dong, J. Ouyang and Y. Xie All rights reserved. No part of this publication may be reproduced, stored in a retrieval system, or transmitted in any form or by any means, mechanical, photocopying, recording or otherwise, without prior written permission of the publishers. Photocopying. In the USA: This journal is registered at the Copyright Clearance Cen- ter, Inc., 222 Rosewood Drive, Danvers, MA 01923. Authorization to photocopy items for internal or personal use, or the internal or personal use of specific clients, is granted by now Publishers Inc for users registered with the Copyright Clearance Center (CCC). The `services' for users can be found on the internet at: www.copyright.com For those organizations that have been granted a photocopy license, a separate system of payment has been arranged. Authorization does not extend to other kinds of copy- ing, such as that for general distribution, for advertising or promotional purposes, for creating new collective works, or for resale. In the rest of the world: Permission to pho- tocopy must be obtained from the copyright owner. Please apply to now Publishers Inc., PO Box 1024, Hanover, MA 02339, USA; Tel. +1-781-871-0245; www.nowpublishers.com; [email protected] now Publishers Inc. has an exclusive license to publish this material worldwide. Permission to use this content must be obtained from the copyright license holder. Please apply to now Publishers, PO Box 179, 2600 AD Delft, The Netherlands, www.nowpublishers.com; e-mail: [email protected] Full text available at: http://dx.doi.org/10.1561/1000000016 Foundations and Trends R in Electronic Design Automation Volume 5 Issues 1{2, 2011 Editorial Board Editor-in-Chief: Sharad Malik Department of Electrical Engineering Princeton University Princeton, NJ 08544 Editors Robert K. Brayton (UC Berkeley) Raul Camposano (Synopsys) K.T. Tim Cheng (UC Santa Barbara) Jason Cong (UCLA) Masahiro Fujita (University of Tokyo) Georges Gielen (KU Leuven) Tom Henzinger (EPFL) Andrew Kahng (UC San Diego) Andreas Kuehlmann (Cadence Berkeley Labs) Ralph Otten (TU Eindhoven) Joel Phillips (Cadence Berkeley Labs) Jonathan Rose (University of Toronto) Rob Rutenbar (CMU) Alberto Sangiovanni-Vincentelli (UC Berkeley) Leon Stok (IBM Research) Full text available at: http://dx.doi.org/10.1561/1000000016 Editorial Scope Foundations and Trends R in Electronic Design Automation will publish survey and tutorial articles in the following topics: • System Level Design • Physical Design • Behavioral Synthesis • Circuit Level Design • Logic Design • Reconfigurable Systems • Verification • Analog Design • Test Information for Librarians Foundations and Trends R in Electronic Design Automation, 2011, Volume 5, 4 issues. ISSN paper version 1551-3939. ISSN online version 1551-3947. Also available as a combined paper and online subscription. Full text available at: http://dx.doi.org/10.1561/1000000016 Foundations and Trends R in Electronic Design Automation Vol. 5, Nos. 1{2 (2011) 1{151 c 2011 G. Sun, Y. Chen, X. Dong, J. Ouyang and Y. Xie DOI: 10.1561/1000000016 Three-dimensional Integrated Circuits: Design, EDA, and Architecture Guangyu Sun, Yibo Chen, Xiangyu Dong, Jin Ouyang, Yuan Xie1 1 Pennsylvania State University, Computer Science and Engineering Department, University Park, PA 16802, USA, fgsun, yxc236, xydong, jouyang, [email protected] Abstract The emerging three-dimensional (3D) integration technology is one of the promising solutions to overcome the barriers in interconnection scal- ing, thereby offering an opportunity to continue performance improve- ments using CMOS technology. As the fabrication of 3D integrated circuits has become viable, developing CAD tools and architectural techniques are imperative for the successful adoption of 3D integration technology. In this article, we first give a brief introduction on the 3D integration technology, and then review the EDA challenges and solu- tions that can enable the adoption of 3D ICs, and finally present design and architectural techniques on the application of 3D ICs, including a survey of various approaches to design future 3D ICs, leveraging the benefits of fast latency, higher bandwidth, and heterogeneous integra- tion capability that are offered by 3D technology. Full text available at: http://dx.doi.org/10.1561/1000000016 Contents 1 Introduction 1 2 3D Integration Technology 3 2.1 The Impact of 3D Technology on 3D IC Design Partitioning 5 3 Benefits of 3D Integrated Circuits 7 3.1 Wire Length Reduction 7 3.2 Memory Bandwidth Improvement 9 3.3 Heterogenous Integration 11 3.4 Cost-effective Architecture 13 4 3D IC EDA Design Tools and Methodologies 15 4.1 Thermal Analysis for 3D ICs 15 4.2 Physical Design Tools and Algorithms for 3D ICs 20 4.3 3D Testing 34 4.4 3DCacti: an Early Analysis Tools for 3D Cache design 37 5 3D FPGA Design 47 5.1 FPGA Background 47 5.2 3D FPGA Design 48 5.3 PCM-Based 3D Non-Volatile FPGA 49 5.4 Summary 59 ix Full text available at: http://dx.doi.org/10.1561/1000000016 6 3D Architecture Exploration 61 6.1 Single-core Fine-Granularity Design 62 6.2 Multi-core Memory Stacking 69 6.3 3D Network-on-Chip 76 7 Cost Analysis for 3D ICs 87 7.1 Introduction 87 7.2 Early Design Estimation for 3D ICs 91 7.3 3D Cost Model 99 7.4 Cost Evaluation for Fully-Customized ASICs 106 7.5 Cost Evaluation for Many-Core Microprocessor Designs 114 7.6 3D IC Testing Cost Analysis 125 7.7 Conclusion 138 8 Challenges for 3D IC Design 141 Acknowledgments 143 References 145 Full text available at: http://dx.doi.org/10.1561/1000000016 1 Introduction With continued technology scaling, interconnection has emerged as the dominant source of circuit delay and power consumption. The reduc- tion of interconnect delays and power consumption are of paramount importance for deep-sub-micron designs. Three-dimensional integrated circuits (3D ICs) [1] are attractive options for overcoming the barriers in interconnection scaling, thereby offering an opportunity to continue performance improvements using CMOS technology. 3D integration technologies offer many benefits for future micropro- cessor designs. Such benefits include: (1) The reduction in interconnec- tion wire length, which results in improved performance and reduced power consumption; (2)Improved memory bandwidth, by stacking mem- ory on microprocessor cores with TSV connections between the memory layer and the core layer; (3) The support for realization of heterogeneous integration, which could result in novel architecture designs. (4)Smaller form factor, which results in higher packing density and smaller foot- print due to the addition of a third dimension to the conventional two dimensional layout, and potentially results in a lower cost design. This monograph first presents the background on 3D integration technologies, and shows the major benefits offered by 3D integration. 1 Full text available at: http://dx.doi.org/10.1561/1000000016 2 Introduction As a key part, EDA design tools and methodologies for 3D ICs are reviewed. The designs of 3D FPGAs and micro-architectures are then discussed, which leverage the benefits of fast latency, higher bandwidth, and heterogeneous integration capability that are offered by 3D tech- nologies. The cost of 3D integration is also analyzed in the last section. Full text available at: http://dx.doi.org/10.1561/1000000016 References [1] W. R. Davis, J. Wilson, S. Mick, et al. Demystifying 3D ICs: the pros and cons of going vertical. IEEE Design and Test of Computers, 22(6):498{510, 2005. [2] Y. Xie, G Loh, B Black, and K. Bernstein. Design space exploration for 3D architectures. ACM Journal of Emerging Technologies in Compuing Systems, 2006. [3] Yuan Xie, Jason Cong, and Sachin Sapatnekar. Three-Dimensional Integrated Circuit Design: EDA, Design and Microarchitectures. Springer, 2009. [4] Yuan Xie. Processor architecture design using 3D integration technology. In VLSI Design, 2010. VLSID '10. 23rd International Conference on, pages 446{451, jan. 2010. [5] P. Garrou. Handbook of 3D Integration: Technology and Applications using 3D Integrated Circuits, chapter Introduction to 3D Integration. Wiley-CVH, 2008. [6] J.W. Joyner, P. Zarkesh-Ha, and J.D. Meindl. A stochastic global net-length distribution for a three-dimensional system-on-a-chip (3D-SoC). In Proc. 14th Annual IEEE International ASIC/SOC Conference, September 2001. [7] Yuh-fang Tsai, Feng Wang, Yuan Xie, N. Vijaykrishnan, and M. J. Irwin. Design space exploration for three-dimensional cache. IEEE Transactions on Very Large Scale Integration Systems, 2008. [8] Balaji Vaidyanathan, Wei-Lun Hung, Feng Wang, Yuan Xie, Vijaykrishnan Narayanan, and Mary Jane Irwin. Architecting microprocessor components in 3D design space. In Intl. Conf. on VLSI Design, pages 103{108, 2007. 145 Full text available at: http://dx.doi.org/10.1561/1000000016 146 References [9] Kiran Puttaswamy and Gabriel H.
Recommended publications
  • Efficient Checker Processor Design

    Efficient Checker Processor Design

    Efficient Checker Processor Design Saugata Chatterjee, Chris Weaver, and Todd Austin Electrical Engineering and Computer Science Department University of Michigan {saugatac,chriswea,austin}@eecs.umich.edu Abstract system works to increase test space coverage by proving a design is correct, either through model equivalence or assertion. The approach is significantly more efficient The design and implementation of a modern micro- than simulation-based testing as a single proof can ver- processor creates many reliability challenges. Design- ify correctness over large portions of a design’s state ers must verify the correctness of large complex systems space. However, complex modern pipelines with impre- and construct implementations that work reliably in var- cise state management, out-of-order execution, and ied (and occasionally adverse) operating conditions. In aggressive speculation are too stateful or incomprehen- our previous work, we proposed a solution to these sible to permit complete formal verification. problems by adding a simple, easily verifiable checker To further complicate verification, new reliability processor at pipeline retirement. Performance analyses challenges are materializing in deep submicron fabrica- of our initial design were promising, overall slowdowns tion technologies (i.e. process technologies with mini- due to checker processor hazards were less than 3%. mum feature sizes below 0.25um). Finer feature sizes However, slowdowns for some outlier programs were are generally characterized by increased complexity, larger. more exposure to noise-related faults, and interference In this paper, we examine closely the operation of the from single event radiation (SER). It appears the current checker processor. We identify the specific reasons why advances in verification (e.g., formal verification, the initial design works well for some programs, but model-based test generation) are not keeping pace with slows others.
  • Hybrid Memristor–CMOS Implementation of Combinational Logic Based on X-MRL †

    Hybrid Memristor–CMOS Implementation of Combinational Logic Based on X-MRL †

    electronics Article Hybrid Memristor–CMOS Implementation of Combinational Logic Based on X-MRL † Khaled Alhaj Ali 1,* , Mostafa Rizk 1,2,3 , Amer Baghdadi 1 , Jean-Philippe Diguet 4 and Jalal Jomaah 3 1 IMT Atlantique, Lab-STICC CNRS, UMR, 29238 Brest, France; [email protected] (M.R.); [email protected] (A.B.) 2 Lebanese International University, School of Engineering, Block F 146404 Mazraa, Beirut 146404, Lebanon 3 Faculty of Sciences, Lebanese University, Beirut 6573, Lebanon; [email protected] 4 IRL CROSSING CNRS, Adelaide 5005, Australia; [email protected] * Correspondence: [email protected] † This paper is an extended version of our paper published in IEEE International Conference on Electronics, Circuits and Systems (ICECS) , 27–29 November 2019, as Ali, K.A.; Rizk, M.; Baghdadi, A.; Diguet, J.P.; Jomaah, J. “MRL Crossbar-Based Full Adder Design”. Abstract: A great deal of effort has recently been devoted to extending the usage of memristor technology from memory to computing. Memristor-based logic design is an emerging concept that targets efficient computing systems. Several logic families have evolved, each with different attributes. Memristor Ratioed Logic (MRL) has been recently introduced as a hybrid memristor–CMOS logic family. MRL requires an efficient design strategy that takes into consideration the implementation phase. This paper presents a novel MRL-based crossbar design: X-MRL. The proposed structure combines the density and scalability attributes of memristive crossbar arrays and the opportunity of their implementation at the top of CMOS layer. The evaluation of the proposed approach is performed through the design of an X-MRL-based full adder.

  • Three-Dimensional Integrated Circuit Design: EDA, Design And

    Integrated Circuits and Systems Series Editor Anantha Chandrakasan, Massachusetts Institute of Technology Cambridge, Massachusetts For other titles published in this series, go to http://www.springer.com/series/7236 Yuan Xie · Jason Cong · Sachin Sapatnekar Editors Three-Dimensional Integrated Circuit Design EDA, Design and Microarchitectures 123 Editors Yuan Xie Jason Cong Department of Computer Science and Department of Computer Science Engineering University of California, Los Angeles Pennsylvania State University [email protected] [email protected] Sachin Sapatnekar Department of Electrical and Computer Engineering University of Minnesota [email protected] ISBN 978-1-4419-0783-7 e-ISBN 978-1-4419-0784-4 DOI 10.1007/978-1-4419-0784-4 Springer New York Dordrecht Heidelberg London Library of Congress Control Number: 2009939282 © Springer Science+Business Media, LLC 2010 All rights reserved. This work may not be translated or copied in whole or in part without the written permission of the publisher (Springer Science+Business Media, LLC, 233 Spring Street, New York, NY 10013, USA), except for brief excerpts in connection with reviews or scholarly analysis. Use in connection with any form of information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed is forbidden. The use in this publication of trade names, trademarks, service marks, and similar terms, even if they are not identified as such, is not to be taken as an expression of opinion as to whether or not they are subject to proprietary rights. Printed on acid-free paper Springer is part of Springer Science+Business Media (www.springer.com) Foreword We live in a time of great change.
  • Recommendation to Handle Bare Dies

    Recommendation to Handle Bare Dies

    Recommendation to handle bare dies Rev. 1.3 General description This application note gives recommendations on how to handle bare dies* in Chip On Board (COB), Chip On Glass (COG) and flip chip technologies. Bare dies should not be handled as chips in a package. This document highlights some specific effects which could harm the quality and yield of the production. *separated piece(s) of semiconductor wafer that constitute(s) a discrete semiconductor or whole integrated circuit. International Electrotechnical Commission, IEC 62258-1, ed. 1.0 (2005-08). A dedicated vacuum pick up tool is used to manually move the die. Figure 1: Vacuum pick up tool and wrist-strap for ESD protection Delivery Forms Bare dies are delivered in the following forms: Figure 2: Unsawn wafer Application Note – Ref : APN001HBD1.3 FBC-0002-01 1 Recommendation to handle bare dies Rev. 1.3 Figure 3: Unsawn wafer in open wafer box for multi-wafer or single wafer The wafer is sawn. So please refer to the E-mapping file from wafer test (format: SINF, eg4k …) for good dies information, especially when it is picked from metal Film Frame Carrier (FFC). Figure 4: Wafer on Film Frame Carrier (FFC) Figure 5: Die on tape reel Figure 6: Waffle pack for bare die Application Note – Ref : APN001HBD1.3 FBC-0002-01 2 Recommendation to handle bare dies Rev. 1.3 Die Handling Bare die must be handled always in a class 1000 (ISO 6) clean room environment: unpacking and inspection, die bonding, wire bonding, molding, sealing. Handling must be reduced to the absolute minimum, un-necessary inspections or repacking tasks have to be avoided (assembled devices do not need to be handled in a clean room environment since the product is already well packed) Use of complete packing units (waffle pack, FFC, tape and reel) is recommended and remaining quantities have to be repacked immediately after any process (e.g.
  • From Sand to Circuits

    From Sand to Circuits

    From sand to circuits By continually advancing silicon technology and moving the industry forward, we help empower people to do more. To enhance their knowledge. To strengthen their connections. To change the world. How Intel makes integrated circuit chips www.intel.com www.intel.com/museum Copyright © 2005Intel Corporation. All rights reserved. Intel, the Intel logo, Celeron, i386, i486, Intel Xeon, Itanium, and Pentium are trademarks or registered trademarks of Intel Corporation or its subsidiaries in the United States and other countries. *Other names and brands may be claimed as the property of others. 0605/TSM/LAI/HP/XK 308301-001US From sand to circuits Revolutionary They are small, about the size of a fingernail. Yet tiny silicon chips like the Intel® Pentium® 4 processor that you see here are changing the way people live, work, and play. This Intel® Pentium® 4 processor contains more than 50 million transistors. Today, silicon chips are everywhere — powering the Internet, enabling a revolution in mobile computing, automating factories, enhancing cell phones, and enriching home entertainment. Silicon is at the heart of an ever expanding, increasingly connected digital world. The task of making chips like these is no small feat. Intel’s manufacturing technology — the most advanced in the world — builds individual circuit lines 1,000 times thinner than a human hair on these slivers of silicon. The most sophisticated chip, a microprocessor, can contain hundreds of millions or even billions of transistors interconnected by fine wires made of copper. Each transistor acts as an on/off switch, controlling the flow of electricity through the chip to send, receive, and process information in a fraction of a second.
  • LDMOS for Improved Performance

    LDMOS for Improved Performance

    > Submitted to IEEE Transactions on Electron Devices < Final MS # 8011B 1 Extended-p+ Stepped Gate (ESG) LDMOS for Improved Performance M. Jagadesh Kumar, Senior Member, IEEE and Radhakrishnan Sithanandam Abstract—In this paper, we propose a new Extended-p+ Stepped Gate (ESG) thin film SOI LDMOS with an extended-p+ region beneath the source and a stepped gate structure in the drift region of the LDMOS. The hole current generated due to impact ionization is now collected from an n+p+ junction instead of an n+p junction thus delaying the parasitic BJT action. The stepped gate structure enhances RESURF in the drift region, and minimizes the gate-drain capacitance. Based on two- dimensional simulation results, we show that the ESG LDMOS exhibits approximately 63% improvement in breakdown voltage, 38% improvement in on-resistance, 11% improvement in peak transconductance, 18% improvement in switching speed and 63% reduction in gate-drain charge density compared with the conventional LDMOS with a field plate. Index Terms—LDMOS, silicon on insulator (SOI), breakdown voltage, transconductance, on- resistance, gate charge I. INTRODUCTION ATERALLY double diffused metal oxide semiconductor (LDMOS) on SOI substrate is a promising Ltechnology for RF power amplifiers and wireless applications [1-5]. In the recent past, developing high voltage thin film LDMOS has gained importance due to the possibility of its integration with low power CMOS devices and heterogeneous microsystems [6]. But realization of high voltage devices in thin film SOI is challenging because floating body effects affect the breakdown characteristics. Often, body contacts are included to remove the floating body effects in RF devices [7].
  • Understanding Performance Numbers in Integrated Circuit Design Oprecomp Summer School 2019, Perugia Italy 5 September 2019

    Understanding Performance Numbers in Integrated Circuit Design Oprecomp Summer School 2019, Perugia Italy 5 September 2019

    Understanding performance numbers in Integrated Circuit Design Oprecomp summer school 2019, Perugia Italy 5 September 2019 Frank K. G¨urkaynak [email protected] Integrated Systems Laboratory Introduction Cost Design Flow Area Speed Area/Speed Trade-offs Power Conclusions 2/74 Who Am I? Born in Istanbul, Turkey Studied and worked at: Istanbul Technical University, Istanbul, Turkey EPFL, Lausanne, Switzerland Worcester Polytechnic Institute, Worcester MA, USA Since 2008: Integrated Systems Laboratory, ETH Zurich Director, Microelectronics Design Center Senior Scientist, group of Prof. Luca Benini Interests: Digital Integrated Circuits Cryptographic Hardware Design Design Flows for Digital Design Processor Design Open Source Hardware Integrated Systems Laboratory Introduction Cost Design Flow Area Speed Area/Speed Trade-offs Power Conclusions 3/74 What Will We Discuss Today? Introduction Cost Structure of Integrated Circuits (ICs) Measuring performance of ICs Why is it difficult? EDA tools should give us a number Area How do people report area? Is that fair? Speed How fast does my circuit actually work? Power These days much more important, but also much harder to get right Integrated Systems Laboratory The performance establishes the solution space Finally the cost sets a limit to what is possible Introduction Cost Design Flow Area Speed Area/Speed Trade-offs Power Conclusions 4/74 System Design Requirements System Requirements Functionality Functionality determines what the system will do Integrated Systems Laboratory Finally the cost sets a limit
  • Declustering Spatial Databases on a Multi-Computer Architecture

    Declustering Spatial Databases on a Multi-Computer Architecture

    Declustering spatial databases on a multi-computer architecture 1 2 ? 3 Nikos Koudas and Christos Faloutsos and Ibrahim Kamel 1 Computer Systems Research Institute University of Toronto 2 AT&T Bell Lab oratories Murray Hill, NJ 3 Matsushita Information Technology Lab oratory Abstract. We present a technique to decluster a spatial access metho d + on a shared-nothing multi-computer architecture [DGS 90]. We prop ose a software architecture with the R-tree as the underlying spatial access metho d, with its non-leaf levels on the `master-server' and its leaf no des distributed across the servers. The ma jor contribution of our work is the study of the optimal capacity of leaf no des, or `chunk size' (or `striping unit'): we express the resp onse time on range queries as a function of the `chunk size', and we show how to optimize it. We implemented our metho d on a network of workstations, using a real dataset, and we compared the exp erimental and the theoretical results. The conclusion is that our formula for the resp onse time is very accurate (the maximum relative error was 29%; the typical error was in the vicinity of 10-15%). We illustrate one of the p ossible ways to exploit such an accurate formula, by examining several `what-if ' scenarios. One ma jor, practical conclusion is that a chunk size of 1 page gives either optimal or close to optimal results, for a wide range of the parameters. Keywords: Parallel data bases, spatial access metho ds, shared nothing ar- chitecture. 1 Intro duction One of the requirements for the database management systems (DBMSs) of the future is the ability to handle spatial data.
  • Advanced MOSFET Structures and Processes for Sub-7 Nm CMOS Technologies

    Advanced MOSFET Structures and Processes for Sub-7 Nm CMOS Technologies

    Advanced MOSFET Structures and Processes for Sub-7 nm CMOS Technologies By Peng Zheng A dissertation submitted in partial satisfaction of the requirements for the degree of Doctor of Philosophy in Engineering - Electrical Engineering and Computer Sciences in the Graduate Division of the University of California, Berkeley Committee in charge: Professor Tsu-Jae King Liu, Chair Professor Laura Waller Professor Costas J. Spanos Professor Junqiao Wu Spring 2016 © Copyright 2016 Peng Zheng All rights reserved Abstract Advanced MOSFET Structures and Processes for Sub-7 nm CMOS Technologies by Peng Zheng Doctor of Philosophy in Engineering - Electrical Engineering and Computer Sciences University of California, Berkeley Professor Tsu-Jae King Liu, Chair The remarkable proliferation of information and communication technology (ICT) – which has had dramatic economic and social impact in our society – has been enabled by the steady advancement of integrated circuit (IC) technology following Moore’s Law, which states that the number of components (transistors) on an IC “chip” doubles every two years. Increasing the number of transistors on a chip provides for lower manufacturing cost per component and improved system performance. The virtuous cycle of IC technology advancement (higher transistor density lower cost / better performance semiconductor market growth technology advancement higher transistor density etc.) has been sustained for 50 years. Semiconductor industry experts predict that the pace of increasing transistor density will slow down dramatically in the sub-20 nm (minimum half-pitch) regime. Innovations in transistor design and fabrication processes are needed to address this issue. The FinFET structure has been widely adopted at the 14/16 nm generation of CMOS technology.
  • Chap01: Computer Abstractions and Technology

    Chap01: Computer Abstractions and Technology

    CHAPTER 1 Computer Abstractions and Technology 1.1 Introduction 3 1.2 Eight Great Ideas in Computer Architecture 11 1.3 Below Your Program 13 1.4 Under the Covers 16 1.5 Technologies for Building Processors and Memory 24 1.6 Performance 28 1.7 The Power Wall 40 1.8 The Sea Change: The Switch from Uniprocessors to Multiprocessors 43 1.9 Real Stuff: Benchmarking the Intel Core i7 46 1.10 Fallacies and Pitfalls 49 1.11 Concluding Remarks 52 1.12 Historical Perspective and Further Reading 54 1.13 Exercises 54 CMPS290 Class Notes (Chap01) Page 1 / 24 by Kuo-pao Yang 1.1 Introduction 3 Modern computer technology requires professionals of every computing specialty to understand both hardware and software. Classes of Computing Applications and Their Characteristics Personal computers o A computer designed for use by an individual, usually incorporating a graphics display, a keyboard, and a mouse. o Personal computers emphasize delivery of good performance to single users at low cost and usually execute third-party software. o This class of computing drove the evolution of many computing technologies, which is only about 35 years old! Server computers o A computer used for running larger programs for multiple users, often simultaneously, and typically accessed only via a network. o Servers are built from the same basic technology as desktop computers, but provide for greater computing, storage, and input/output capacity. Supercomputers o A class of computers with the highest performance and cost o Supercomputers consist of tens of thousands of processors and many terabytes of memory, and cost tens to hundreds of millions of dollars.
  • Arch2030: a Vision of Computer Architecture Research Over

    Arch2030: a Vision of Computer Architecture Research Over

    Arch2030: A Vision of Computer Architecture Research over the Next 15 Years This material is based upon work supported by the National Science Foundation under Grant No. (1136993). Any opinions, findings, and conclusions or recommendations expressed in this material are those of the author(s) and do not necessarily reflect the views of the National Science Foundation. Arch2030: A Vision of Computer Architecture Research over the Next 15 Years Luis Ceze, Mark D. Hill, Thomas F. Wenisch Sponsored by ARCH2030: A VISION OF COMPUTER ARCHITECTURE RESEARCH OVER THE NEXT 15 YEARS Summary .........................................................................................................................................................................1 The Specialization Gap: Democratizing Hardware Design ..........................................................................................2 The Cloud as an Abstraction for Architecture Innovation ..........................................................................................4 Going Vertical ................................................................................................................................................................5 Architectures “Closer to Physics” ................................................................................................................................5 Machine Learning as a Key Workload ..........................................................................................................................6 About this
  • CSE 141L: Design Your Own Processor What You'll

    CSE 141L: Design Your Own Processor What You'll

    CSE 141L: Design your own processor What you’ll do: - learn Xilinx toolflow - learn Verilog language - propose new ISA - implement it - optimize it (for FPGA) - compete with other teams Grading 15% lab participation – webboard 85% various parts of the labs CSE 141L: Design your own processor Teams - two people - pick someone with similar goals - you keep them to the end of the class - more on the class website: http://www.cse.ucsd.edu/classes/sp08/cse141L/ Course Staff: 141L Instructor: Michael Taylor Email: [email protected] Office Hours: EBU 3b 4110 Tuesday 11:30-12:20 TA: Saturnino Email: [email protected] ebu 3b b260 Lab Hours: TBA (141 TA: Kwangyoon) Æ occasional cameos in 141L http://www-cse.ucsd.edu/classes/sp08/cse141L/ Class Introductions Stand up & tell us: -Name - How long until graduation - What you want to do when you “hit the big time” - What kind of thing you find intellectually interesting What is an FPGA? Next time: (Tuesday) Start working on Xilinx assignment (due next Tuesday) - should be posted Sat will give a tutorial on Verilog today Check the website regularly for updates: http://www.cse.ucsd.edu/classes/sp08/cse141L/ CSE 141: 0 Computer Architecture Professor: Michael Taylor UCSD Department of Computer Science & Engineering RF http://www.cse.ucsd.edu/classes/sp08/cse141/ Computer Architecture from 10,000 feet foo(int x) Class of { .. } application Physics Computer Architecture from 10,000 feet foo(int x) Class of { .. } application An impossibly large gap! In the olden days: “In 1942, just after the United States entered World War II, hundreds of women were employed around the country as Physics computers...” (source: IEEE) The Great Battles in Computer Architecture Are About How to Refine the Abstraction Layers foo(int x) { .