Three-Dimensional Integrated Circuit Design: EDA, Design And
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A Survey of Network Performance Monitoring Tools
A Survey of Network Performance Monitoring Tools Travis Keshav -- [email protected] Abstract In today's world of networks, it is not enough simply to have a network; assuring its optimal performance is key. This paper analyzes several facets of Network Performance Monitoring, evaluating several motivations as well as examining many commercial and public domain products. Keywords: network performance monitoring, application monitoring, flow monitoring, packet capture, sniffing, wireless networks, path analysis, bandwidth analysis, network monitoring platforms, Ethereal, Netflow, tcpdump, Wireshark, Ciscoworks Table Of Contents 1. Introduction 2. Application & Host-Based Monitoring 2.1 Basis of Application & Host-Based Monitoring 2.2 Public Domain Application & Host-Based Monitoring Tools 2.3 Commercial Application & Host-Based Monitoring Tools 3. Flow Monitoring 3.1 Basis of Flow Monitoring 3.2 Public Domain Flow Monitoring Tools 3.3 Commercial Flow Monitoring Protocols 4. Packet Capture/Sniffing 4.1 Basis of Packet Capture/Sniffing 4.2 Public Domain Packet Capture/Sniffing Tools 4.3 Commercial Packet Capture/Sniffing Tools 5. Path/Bandwidth Analysis 5.1 Basis of Path/Bandwidth Analysis 5.2 Public Domain Path/Bandwidth Analysis Tools 6. Wireless Network Monitoring 6.1 Basis of Wireless Network Monitoring 6.2 Public Domain Wireless Network Monitoring Tools 6.3 Commercial Wireless Network Monitoring Tools 7. Network Monitoring Platforms 7.1 Basis of Network Monitoring Platforms 7.2 Commercial Network Monitoring Platforms 8. Conclusion 9. References and Acronyms 1.0 Introduction http://www.cse.wustl.edu/~jain/cse567-06/ftp/net_perf_monitors/index.html 1 of 20 In today's world of networks, it is not enough simply to have a network; assuring its optimal performance is key. -
Fabrication of Group IV Semiconductors on Insulator for Monolithic 3D Integration
Fabrication of Group IV Semiconductors on Insulator for Monolithic 3D Integration Ali Asadollahi Doctoral Thesis in Information and Communication Technology School of Electrical Engineering and Computer Science KTH Royal Institute of Technology Stockholm, Sweden 2017 KTH School of Electrical Engineering and Computer TRITA-EECS-AVL-2018:1 Science ISBN: 978-91-7729-658-4 SE-164 40 Stockholm SWEDEN Akademisk avhandling som med tillstånd av Kungliga Tekniska högskolan framlägges till offentlig granskning för avläggande av teknologie doktorsexamen fredagen den 16 februari 2018 klockan 10:00 i Ka-Sal C (Sal Sven-Olof Öhrvik), Electrum, Kungliga Tekniska högskolan, Kistagången 16, Kista. ©Ali Asadollahi, December 2017 Tryck: Universitetsservice US-AB, Stockholm, 2017 ii To My Parents “All the different nations in the world, despite their differences of appearance and language and the way of life, still have one thing in common, and that is what's inside in all of us. If we X-rayed the insides of different human beings, we wouldn't be able to tell from those X-rays what the person's language or background or race is.” Abbas Kiarostami iv Abstract The conventional 2D geometrical scaling of transistors is now facing many challenges in order to continue the performance enhancement while decreasing power consumption. The decrease in the device power consumption is related to the scaling of the power supply voltage (Vdd) and interconnects wiring length. In addition, monolithic three dimensional (M3D) integration in the form of vertically stacked devices, is a possible solution to increase the device density and reduce interconnect wiring length. Integrating strained germanium on insulator (sGeOI) pMOSFETs monolithically with strained silicon/silicon-germanium on insulator (sSOI/sSiGeOI) nMOSFETs can increase the device performance and packing density. -
A Review Paper on Enhancement of Radio Frequency Microelectro Mechanical Systems
International Journal of Engineering Research & Technology (IJERT) ISSN: 2278-0181 Vol. 3 Issue 10, October- 2014 A Review Paper on Enhancement of Radio Frequency MicroElectro Mechanical Systems Shilpa G. Kulkarni Electronics And Telecommunication Engineering V.I.T.Wadala Mumbai - India Abstract—Radio Frequency Micro Electro Mechanical Systems (RF MEMS) refers to the design and fabrication of committed II. NEED FOR RF MEMS MEMS for RF circuits. RF MEMS is a multi-disciplinary area MEMS switches combine the advantageous properties of in which the components operate Micromechanical And / Or mechanical and semiconductor switches.RF MEMS have components are fabricated using micromachining and these advantages such as, Low insertion loss, High isolation, Lower components are used in RF systems. The regular microwave switches currently employed in the microwave industry are power consumption, Excellent signal linearity, Better mechanical switches and semiconductor switches. Mechanical impedance match, Less dispersion , Miniaturization, Simple coaxial and waveguide switches offer benefits such as, low control circuits, High volume production possible, Very large insertion loss, large off-state isolation and high power handling bandwidth , Resistant to external environment. Table Iand Fig capabilities. Yet, they are bulky, heavy and slow. Semiconductor 1provide a comparison of RF MEMS Switches with the switches provide switching at a much faster speed and are conventional switches. smaller in size and weight, but are inferior in insertion loss, DC power consumption, isolation and power handling capabilities TABLE I. COMPARISON OF VARIOUS PARAMETERS[2] than their mechanical counterparts. MEMS switches promise to RF combine the advantageous properties of mechanical and Parameter PIN FET semiconductor switches. There are nevertheless few issues in RF MEMS MEMS Switch like, Actuation Speed, Power handling capacity, Voltage(V) 20-80 ±3-5 3-5 Stiction and Actuation voltage etc. -
Efficient Checker Processor Design
Efficient Checker Processor Design Saugata Chatterjee, Chris Weaver, and Todd Austin Electrical Engineering and Computer Science Department University of Michigan {saugatac,chriswea,austin}@eecs.umich.edu Abstract system works to increase test space coverage by proving a design is correct, either through model equivalence or assertion. The approach is significantly more efficient The design and implementation of a modern micro- than simulation-based testing as a single proof can ver- processor creates many reliability challenges. Design- ify correctness over large portions of a design’s state ers must verify the correctness of large complex systems space. However, complex modern pipelines with impre- and construct implementations that work reliably in var- cise state management, out-of-order execution, and ied (and occasionally adverse) operating conditions. In aggressive speculation are too stateful or incomprehen- our previous work, we proposed a solution to these sible to permit complete formal verification. problems by adding a simple, easily verifiable checker To further complicate verification, new reliability processor at pipeline retirement. Performance analyses challenges are materializing in deep submicron fabrica- of our initial design were promising, overall slowdowns tion technologies (i.e. process technologies with mini- due to checker processor hazards were less than 3%. mum feature sizes below 0.25um). Finer feature sizes However, slowdowns for some outlier programs were are generally characterized by increased complexity, larger. more exposure to noise-related faults, and interference In this paper, we examine closely the operation of the from single event radiation (SER). It appears the current checker processor. We identify the specific reasons why advances in verification (e.g., formal verification, the initial design works well for some programs, but model-based test generation) are not keeping pace with slows others. -
RF CMOS Power Amplifiers: Theory, Design and Implementation the KLUWER INTERNATIONAL SERIES in ENGINEERING and COMPUTER SCIENCE
RF CMOS Power Amplifiers: Theory, Design and Implementation THE KLUWER INTERNATIONAL SERIES IN ENGINEERING AND COMPUTER SCIENCE ANALOG CIRCUITS AND SIGNAL PROCESSING Consulting Editor: Mohammed Ismail. Ohio State University Related Titles: POWER TRADE-OFFS AND LOW POWER IN ANALOG CMOS ICS M. Sanduleanu, van Tuijl ISBN: 0-7923-7643-9 RF CMOS POWER AMPLIFIERS: THEORY, DESIGN AND IMPLEMENTATION M.Hella, M.Ismail ISBN: 0-7923-7628-5 WIRELESS BUILDING BLOCKS J.Janssens, M. Steyaert ISBN: 0-7923-7637-4 CODING APPROACHES TO FAULT TOLERANCE IN COMBINATION AND DYNAMIC SYSTEMS C. Hadjicostis ISBN: 0-7923-7624-2 DATA CONVERTERS FOR WIRELESS STANDARDS C. Shi, M. Ismail ISBN: 0-7923-7623-4 STREAM PROCESSOR ARCHITECTURE S. Rixner ISBN: 0-7923-7545-9 LOGIC SYNTHESIS AND VERIFICATION S. Hassoun, T. Sasao ISBN: 0-7923-7606-4 VERILOG-2001-A GUIDE TO THE NEW FEATURES OF THE VERILOG HARDWARE DESCRIPTION LANGUAGE S. Sutherland ISBN: 0-7923-7568-8 IMAGE COMPRESSION FUNDAMENTALS, STANDARDS AND PRACTICE D. Taubman, M. Marcellin ISBN: 0-7923-7519-X ERROR CODING FOR ENGINEERS A.Houghton ISBN: 0-7923-7522-X MODELING AND SIMULATION ENVIRONMENT FOR SATELLITE AND TERRESTRIAL COMMUNICATION NETWORKS A.Ince ISBN: 0-7923-7547-5 MULT-FRAME MOTION-COMPENSATED PREDICTION FOR VIDEO TRANSMISSION T. Wiegand, B. Girod ISBN: 0-7923-7497- 5 SUPER - RESOLUTION IMAGING S. Chaudhuri ISBN: 0-7923-7471-1 AUTOMATIC CALIBRATION OF MODULATED FREQUENCY SYNTHESIZERS D. McMahill ISBN: 0-7923-7589-0 MODEL ENGINEERING IN MIXED-SIGNAL CIRCUIT DESIGN S. Huss ISBN: 0-7923-7598-X CONTINUOUS-TIME SIGMA-DELTA MODULATION FOR A/D CONVERSION IN RADIO RECEIVERS L. -
Microchip Manufacturing
Si3N4 Deposition & the Virtual Chemical Vapor Deposition Lab Making a transistor, the general process A closer look at chemical vapor deposition and the virtual lab Images courtesy Silicon Run Educational Video, VCVD Lab Screenshot Why Si3N4 Deposition…Making Microprocessors http://www.sonyericsson.com/cws/products/mobilephones /overview/x1?cc=us&lc=en http://vista.pca.org/yos/Porsche-911-Turbo.jpg On a wafer, billions of transistors are housed on a single square chip. One malfunctioning transistor could cause a chip to short-circuit, ruining the chip. Thus, the process of creating each microscopic transistor must be very precise. Wafer image: http://upload.wikimedia.org/wikipedia/fr/thumb/2/2b/PICT0214.JPG/300px-PICT0214.JPG What size do you think an individual transistor being made today is? Size of Transistors One chip is made of millions or billions of transistors packed into a length and width of less than half an inch. Channel lengths in MOSFET transistors are less than a tenth of a micrometer. Human hair is approximately 100 micrometers in diameter. Scaling of successive generations of MOSFETs into the nanoscale regime (from Intel). Transistor: MOS We will illustrate the process sequence of creating a transistor with a Metal Oxide Semiconductor(MOS) transistor. Wafers – 12” Diameter ½” to ¾” Source Gate Drain conductor Insulator n-Si n-Si p-Si Image courtesy: Pro. Milo Koretsky Chemical Engineering Department at OSU IC Manufacturing Process IC Processing consists of selectively adding material (Conductor, insulator, semiconductor) to, removing it from or modifying it Wafers Deposition / Photo/ Ion Implant / Pattern Etching / CMP Oxidation Anneal Clean Clean Transfer Loop (Note that these steps are not all the steps to create a transistor. -
An Introduction
This chapter is from Social Media Mining: An Introduction. By Reza Zafarani, Mohammad Ali Abbasi, and Huan Liu. Cambridge University Press, 2014. Draft version: April 20, 2014. Complete Draft and Slides Available at: http://dmml.asu.edu/smm Chapter 10 Behavior Analytics What motivates individuals to join an online group? When individuals abandon social media sites, where do they migrate to? Can we predict box office revenues for movies from tweets posted by individuals? These questions are a few of many whose answers require us to analyze or predict behaviors on social media. Individuals exhibit different behaviors in social media: as individuals or as part of a broader collective behavior. When discussing individual be- havior, our focus is on one individual. Collective behavior emerges when a population of individuals behave in a similar way with or without coordi- nation or planning. In this chapter we provide examples of individual and collective be- haviors and elaborate techniques used to analyze, model, and predict these behaviors. 10.1 Individual Behavior We read online news; comment on posts, blogs, and videos; write reviews for products; post; like; share; tweet; rate; recommend; listen to music; and watch videos, among many other daily behaviors that we exhibit on social media. What are the types of individual behavior that leave a trace on social media? We can generally categorize individual online behavior into three cate- gories (shown in Figure 10.1): 319 Figure 10.1: Individual Behavior. 1. User-User Behavior. This is the behavior individuals exhibit with re- spect to other individuals. For instance, when befriending someone, sending a message to another individual, playing games, following, inviting, blocking, subscribing, or chatting, we are demonstrating a user-user behavior. -
Hybrid Memristor–CMOS Implementation of Combinational Logic Based on X-MRL †
electronics Article Hybrid Memristor–CMOS Implementation of Combinational Logic Based on X-MRL † Khaled Alhaj Ali 1,* , Mostafa Rizk 1,2,3 , Amer Baghdadi 1 , Jean-Philippe Diguet 4 and Jalal Jomaah 3 1 IMT Atlantique, Lab-STICC CNRS, UMR, 29238 Brest, France; [email protected] (M.R.); [email protected] (A.B.) 2 Lebanese International University, School of Engineering, Block F 146404 Mazraa, Beirut 146404, Lebanon 3 Faculty of Sciences, Lebanese University, Beirut 6573, Lebanon; [email protected] 4 IRL CROSSING CNRS, Adelaide 5005, Australia; [email protected] * Correspondence: [email protected] † This paper is an extended version of our paper published in IEEE International Conference on Electronics, Circuits and Systems (ICECS) , 27–29 November 2019, as Ali, K.A.; Rizk, M.; Baghdadi, A.; Diguet, J.P.; Jomaah, J. “MRL Crossbar-Based Full Adder Design”. Abstract: A great deal of effort has recently been devoted to extending the usage of memristor technology from memory to computing. Memristor-based logic design is an emerging concept that targets efficient computing systems. Several logic families have evolved, each with different attributes. Memristor Ratioed Logic (MRL) has been recently introduced as a hybrid memristor–CMOS logic family. MRL requires an efficient design strategy that takes into consideration the implementation phase. This paper presents a novel MRL-based crossbar design: X-MRL. The proposed structure combines the density and scalability attributes of memristive crossbar arrays and the opportunity of their implementation at the top of CMOS layer. The evaluation of the proposed approach is performed through the design of an X-MRL-based full adder. -
Recommendation to Handle Bare Dies
Recommendation to handle bare dies Rev. 1.3 General description This application note gives recommendations on how to handle bare dies* in Chip On Board (COB), Chip On Glass (COG) and flip chip technologies. Bare dies should not be handled as chips in a package. This document highlights some specific effects which could harm the quality and yield of the production. *separated piece(s) of semiconductor wafer that constitute(s) a discrete semiconductor or whole integrated circuit. International Electrotechnical Commission, IEC 62258-1, ed. 1.0 (2005-08). A dedicated vacuum pick up tool is used to manually move the die. Figure 1: Vacuum pick up tool and wrist-strap for ESD protection Delivery Forms Bare dies are delivered in the following forms: Figure 2: Unsawn wafer Application Note – Ref : APN001HBD1.3 FBC-0002-01 1 Recommendation to handle bare dies Rev. 1.3 Figure 3: Unsawn wafer in open wafer box for multi-wafer or single wafer The wafer is sawn. So please refer to the E-mapping file from wafer test (format: SINF, eg4k …) for good dies information, especially when it is picked from metal Film Frame Carrier (FFC). Figure 4: Wafer on Film Frame Carrier (FFC) Figure 5: Die on tape reel Figure 6: Waffle pack for bare die Application Note – Ref : APN001HBD1.3 FBC-0002-01 2 Recommendation to handle bare dies Rev. 1.3 Die Handling Bare die must be handled always in a class 1000 (ISO 6) clean room environment: unpacking and inspection, die bonding, wire bonding, molding, sealing. Handling must be reduced to the absolute minimum, un-necessary inspections or repacking tasks have to be avoided (assembled devices do not need to be handled in a clean room environment since the product is already well packed) Use of complete packing units (waffle pack, FFC, tape and reel) is recommended and remaining quantities have to be repacked immediately after any process (e.g. -
From Sand to Circuits
From sand to circuits By continually advancing silicon technology and moving the industry forward, we help empower people to do more. To enhance their knowledge. To strengthen their connections. To change the world. How Intel makes integrated circuit chips www.intel.com www.intel.com/museum Copyright © 2005Intel Corporation. All rights reserved. Intel, the Intel logo, Celeron, i386, i486, Intel Xeon, Itanium, and Pentium are trademarks or registered trademarks of Intel Corporation or its subsidiaries in the United States and other countries. *Other names and brands may be claimed as the property of others. 0605/TSM/LAI/HP/XK 308301-001US From sand to circuits Revolutionary They are small, about the size of a fingernail. Yet tiny silicon chips like the Intel® Pentium® 4 processor that you see here are changing the way people live, work, and play. This Intel® Pentium® 4 processor contains more than 50 million transistors. Today, silicon chips are everywhere — powering the Internet, enabling a revolution in mobile computing, automating factories, enhancing cell phones, and enriching home entertainment. Silicon is at the heart of an ever expanding, increasingly connected digital world. The task of making chips like these is no small feat. Intel’s manufacturing technology — the most advanced in the world — builds individual circuit lines 1,000 times thinner than a human hair on these slivers of silicon. The most sophisticated chip, a microprocessor, can contain hundreds of millions or even billions of transistors interconnected by fine wires made of copper. Each transistor acts as an on/off switch, controlling the flow of electricity through the chip to send, receive, and process information in a fraction of a second. -
LDMOS for Improved Performance
> Submitted to IEEE Transactions on Electron Devices < Final MS # 8011B 1 Extended-p+ Stepped Gate (ESG) LDMOS for Improved Performance M. Jagadesh Kumar, Senior Member, IEEE and Radhakrishnan Sithanandam Abstract—In this paper, we propose a new Extended-p+ Stepped Gate (ESG) thin film SOI LDMOS with an extended-p+ region beneath the source and a stepped gate structure in the drift region of the LDMOS. The hole current generated due to impact ionization is now collected from an n+p+ junction instead of an n+p junction thus delaying the parasitic BJT action. The stepped gate structure enhances RESURF in the drift region, and minimizes the gate-drain capacitance. Based on two- dimensional simulation results, we show that the ESG LDMOS exhibits approximately 63% improvement in breakdown voltage, 38% improvement in on-resistance, 11% improvement in peak transconductance, 18% improvement in switching speed and 63% reduction in gate-drain charge density compared with the conventional LDMOS with a field plate. Index Terms—LDMOS, silicon on insulator (SOI), breakdown voltage, transconductance, on- resistance, gate charge I. INTRODUCTION ATERALLY double diffused metal oxide semiconductor (LDMOS) on SOI substrate is a promising Ltechnology for RF power amplifiers and wireless applications [1-5]. In the recent past, developing high voltage thin film LDMOS has gained importance due to the possibility of its integration with low power CMOS devices and heterogeneous microsystems [6]. But realization of high voltage devices in thin film SOI is challenging because floating body effects affect the breakdown characteristics. Often, body contacts are included to remove the floating body effects in RF devices [7]. -
Understanding Performance Numbers in Integrated Circuit Design Oprecomp Summer School 2019, Perugia Italy 5 September 2019
Understanding performance numbers in Integrated Circuit Design Oprecomp summer school 2019, Perugia Italy 5 September 2019 Frank K. G¨urkaynak [email protected] Integrated Systems Laboratory Introduction Cost Design Flow Area Speed Area/Speed Trade-offs Power Conclusions 2/74 Who Am I? Born in Istanbul, Turkey Studied and worked at: Istanbul Technical University, Istanbul, Turkey EPFL, Lausanne, Switzerland Worcester Polytechnic Institute, Worcester MA, USA Since 2008: Integrated Systems Laboratory, ETH Zurich Director, Microelectronics Design Center Senior Scientist, group of Prof. Luca Benini Interests: Digital Integrated Circuits Cryptographic Hardware Design Design Flows for Digital Design Processor Design Open Source Hardware Integrated Systems Laboratory Introduction Cost Design Flow Area Speed Area/Speed Trade-offs Power Conclusions 3/74 What Will We Discuss Today? Introduction Cost Structure of Integrated Circuits (ICs) Measuring performance of ICs Why is it difficult? EDA tools should give us a number Area How do people report area? Is that fair? Speed How fast does my circuit actually work? Power These days much more important, but also much harder to get right Integrated Systems Laboratory The performance establishes the solution space Finally the cost sets a limit to what is possible Introduction Cost Design Flow Area Speed Area/Speed Trade-offs Power Conclusions 4/74 System Design Requirements System Requirements Functionality Functionality determines what the system will do Integrated Systems Laboratory Finally the cost sets a limit