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Microchip Manufacturing Si3N4 Deposition & the Virtual Chemical Vapor Deposition Lab Making a transistor, the general process A closer look at chemical vapor deposition and the virtual lab Images courtesy Silicon Run Educational Video, VCVD Lab Screenshot Why Si3N4 Deposition…Making Microprocessors http://www.sonyericsson.com/cws/products/mobilephones /overview/x1?cc=us&lc=en http://vista.pca.org/yos/Porsche-911-Turbo.jpg On a wafer, billions of transistors are housed on a single square chip. One malfunctioning transistor could cause a chip to short-circuit, ruining the chip. Thus, the process of creating each microscopic transistor must be very precise. Wafer image: http://upload.wikimedia.org/wikipedia/fr/thumb/2/2b/PICT0214.JPG/300px-PICT0214.JPG What size do you think an individual transistor being made today is? Size of Transistors One chip is made of millions or billions of transistors packed into a length and width of less than half an inch. Channel lengths in MOSFET transistors are less than a tenth of a micrometer. Human hair is approximately 100 micrometers in diameter. Scaling of successive generations of MOSFETs into the nanoscale regime (from Intel). Transistor: MOS We will illustrate the process sequence of creating a transistor with a Metal Oxide Semiconductor(MOS) transistor. Wafers – 12” Diameter ½” to ¾” Source Gate Drain conductor Insulator n-Si n-Si p-Si Image courtesy: Pro. Milo Koretsky Chemical Engineering Department at OSU IC Manufacturing Process IC Processing consists of selectively adding material (Conductor, insulator, semiconductor) to, removing it from or modifying it Wafers Deposition / Photo/ Ion Implant / Pattern Etching / CMP Oxidation Anneal Clean Clean Transfer Loop (Note that these steps are not all the steps to create a transistor. Some steps are skipped. This is purely to show the various stages in the loop to create a transistor.) Graphics copy-write Pro. Milo Koretsky Chemical Engineering Department at OSU Si write Pro. Milo KoretskyPro. Milo write - Graphics copy Graphics OSU atDepartment Engineering Chemical Photo/ Etching / Ion Implant / Deposition / Pattern CMP Anneal Oxidation Transfer Clean Starting Silicon Starting Wafer Loop Wafers Making a Transistor: Making Si Polished Silicon Wafer Silicon Polished write Pro. Milo KoretskyPro. Milo write - Graphics copy Graphics OSU atDepartment Engineering Chemical Photo/ Etching / Ion Implant / Deposition / Pattern CMP Anneal Oxidation Transfer Clean Loop Clean substrate Chemical Vapor Deposition: Si3N4 Clean Process 200 Wafers at a Time Deposition / Deposition Oxidation Transfer Pattern Photo/ Loop Etching / Etching CMP Si Ion Implant / Implant Ion Anneal Graphics copy-write Pro. Milo Koretsky Chemical Engineering Department at OSU Si write Pro. Milo KoretskyPro. Milo write - Graphics copy Graphics OSU atDepartment Engineering Chemical mask of Photoresist Photo/ Etching / Ion Implant / Deposition / Pattern CMP Anneal Oxidation Transfer Clean Loop Spin Coating Spin Si write Pro. Milo KoretskyPro. Milo write - Graphics copy Graphics OSU atDepartment Engineering Chemical Photo/ Etching / Ion Implant / Deposition / Pattern CMP Anneal Oxidation Transfer Clean Loop Develop Photoresist Develop Plasma Etch Si3N4 Clean Deposition / Deposition Oxidation Transfer Pattern Photo/ Loop Etching / Etching CMP Si Ion Implant / Implant Ion Anneal Graphics copy-write Pro. Milo Koretsky Chemical Engineering Department at OSU Si write Pro. Milo KoretskyPro. Milo write - Graphics copy Graphics OSU atDepartment Engineering Chemical : Strip Photoresist Photo/ Etching / Ion Implant / Deposition / Pattern CMP Anneal Oxidation Transfer Clean Loop Plasma Etch Ion Implantation Clean IONS IONS IONS Deposition / Deposition Oxidation Transfer Pattern Photo/ Loop Etching / Etching CMP Si 1.75 u Ion Implant / Implant Ion Anneal 1/50th of a human hair Graphics copy-write Pro. Milo Koretsky Chemical Engineering Department at OSU Anneal • Clean before anneal Clean Activate (& diffuse) the dopant Deposition / Deposition Oxidation HEAT HEAT HEAT Transfer Pattern Photo/ Loop Etching / Etching CMP Si Ion Implant / Implant Ion Anneal Graphics copy-write Pro. Milo Koretsky Chemical Engineering Department at OSU The Final Steps…a completed transistor Gate: + Source - Drain: + - - e e Si Graphics copy-write Pro. Milo Koretsky Chemical Engineering Department at OSU Chemical Vapor Deposition A Closer Look: Si3N4 Reactions: __SiCl2H2 (g) + __NH3 (g) Si3N4 (s) + HCl (g) + H2 (g) Dichlorosilane Ammonia Silicon Hydrogen chloride Hydrogen nitride __HCl (g) + __NH3 (g) ___NH4 Cl(g) NH4Cl (gas) NH3 (gas) Hydrogen chloride Ammonia Ammonium chloride H2 (gas) DCS (gas) Silicon nitride DCS (gas) NH3 (gas) Graphics copy-write Pro. Milo Koretsky Chemical Engineering Department at OSU Chemical Vapor Deposition A Closer Look: Si3N4 Reactions: 3 SiCl2H2 (g) + 4 NH3 (g) 1 Si3N4 (s) + 6 HCl (g) + 6 H2 (g) Dichlorosilane Ammonia Silicon Hydrogen chloride Hydrogen nitride NH4Cl (gas) NH3 (gas) H2 (gas) DCS (gas) 1 HCl (g) + 1 NH3 (g) 1 NH4 Cl(g) Hydrogen chloride Ammonia Ammonium chloride Silicon nitride DCS (gas) NH3 (gas) Overall Reaction: 3 SiCl2H2 (g)+10 NH3 (g) Si3N4 (s) + 6 NH4Cl (g)+ 6 H2 (g) Dichlorosilane Ammonia Silicon Ammonium chloride Hydrogen (DCS) nitride Graphics copy-write Pro. Milo Koretsky Chemical Engineering Department at OSU Concentration What factors do you think affect the reaction and film growth? Temperature Reaction/Deposition Time Virtual CVD Overview Choosing the Virtual CVD reactor parameters Pressure is Fixed Factors that Effect Reaction and Film Growth: Concentration Absolute flow rates of PV = nRT NH3 to SiCl2H2 Ratio of NH3 to SiCl2H2 NH4Cl (gas) NH3 (gas) H2 (gas) Pressure (fixed) SiCl2H2 (gas) SiCl2H2 (gas) NH3 (gas) Graphics copy-write Pro. Milo Koretsky, Chemical Engineering Department at OSU and Silicon Run Educational Video Factors that Effect Reaction and Film Growth: Temperature There are 5 First order reaction (thermal): temperature zones A B Remember (18.12, Addison-Wesley, Chemistry) 1 k Energy B Rate = [A] Ea,f A Ea, f k k exp 0 RT Reaction coordinate The Arrhenius Equation Factors that Effect Reaction and Film Growth: Temperature What can you do with the 5 temperature zones??? PV = nRT NH4Cl (gas) NH3 (gas) H2 (gas) SiCl2H2 (gas) SiCl2H2 (gas) NH3 (gas) Graphics copy-write Pro. Milo Koretsky, Chemical Engineering Department at OSU and Silicon Run Educational Video Factors that Effect Reaction and Film Growth: Deposition Time aka Reaction Time Reaction/Deposition Time = the amount of time the reactor runs How do you think deposition time effects the film thickness??? Virtual CVD Overview Choosing the Virtual CVD reactor parameters Pressure is Fixed Each run costs $ Measurement – Thickness & Uniformity Film thickness is determined by the amount of material that reacts and is grown on the wafer Uniformity describes the evenness of film thickness on the wafer 45% Uniformity 100% Uniformity 1000 1000 800 800 600 600 400 400 200 200 Film Thickness [A] Thickness Film [A] Thickness Film 0 0 -150 -50 50 150 -150 -50 50 150 x position x position Measurement – Thickness & Uniformity Film thickness is determined by the amount of material that reacts and is grown on the wafer Uniformity describes the evenness of film thickness on the wafer NH4Cl (gas) NH3 (gas) H2 (gas) SiCl2H2 (gas) 200 50% Overall Efficiency 150 100 Wafer # Wafer 50 0 0 2000 4000 6000 8000 10000 SiCl2H2 (gas) Thickness [A] NH3 (gas) 79% Overall Efficiency Measurement via Ellipsometer Light Source The ellipsometer is used to measure the Detector thickness and refractive index of Light Control transparent films. It is made of a light source and polarizer Analyzing Polarizing on one side and a analyzer and detector Polarizer Sheet on the other side. Substrate Analyzer & Light Source, Detector Control & Polarizing Light from the source is polarized Sheet and reflected off the film. The analyzer is rotated till no light passes through it. The angle of rotation depends on the thickness of the film. Virtual CVD Overview Choosing the locations on the wafer to measure Each measurement costs $ Virtual Chemical Vapor Deposition (VCVD) Program Semiconductor Manufacturing Fab VCVD Program Photo Courtesy of http://webmedia.national.com/gallery/06/06_rgb.jpg Your Objectives: Determine how temperature, flow rates, and reaction time impact deposition of Si3N4 Minimize cost of testing process used to determine the impact of these parameters Extra Credit: Find an optimized “recipe” that produces high uniformity (within wafer and between wafers) and meets a target thickness of 1000 Angstroms Economy of Transistors ~$300 /chip X ~200 chips/wafer http://www.nitride.co.jp/english X 200 wafers/furnace /products/wafer.html load = $12 Million per furnace load http://www.dvhardware.net/article16696.html Let’s Get Started Open VCVD Program....
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