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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FGD5T120SH — 1200 V, 5 A FS Trench IGBT C C C V V V A A A A W W o o o Unit www.fairchildsemi.com November 2015 November ogy, Fairchild’s new series of new Fairchild’s ogy, 5 28 10 69 ±25 ±30 300 12.5 12.5 1200 -55 to +150 -55 to +150 FGD5T120SH s. s. C C o o C C C o o o General Description technol stop IGBT Using novel field the optimum performance offer field stop 3rd generation IGBTs home lighting and for inrush current appliance limitation, application 1 = 25 = 100 = 25 = 25 = 100 C C C C C @ T @ T @ T @ T @ T

= 5 A = 25°C= unless otherwise noted C C T I IGBT

@ D-PAK Description C Inductive Load Inductive =2.9 V (1) = 50 Ω, LM G E CE(sat) CE(sat) G = 12.5 A, R 12.5 = C Operating Junction Temperature Maximum Power Dissipation Maximum Power Dissipation Range Temperature Storage for soldering Maximum Lead Temp. Collector to Voltage Emitter Gate to Emitter Voltage Voltage Gate to Emitter Transient Collector Current Purposes, 1/8” from case for 5 seconds Clamped Inductive Load Current Pulsed Collector Current Collector Current Maximum Power Dissipation Power Dissipation Maximum = 15 V, I V, = 15 GE (2) (1) Symbol

D CES GES L J stg LM CM C V I I T P I V T T • Input Impedance High • Compliant RoHS Applications • Inrush current limitation • Lighting • appliances Home 1200 V, 5 A FS Trench 1200 V, Features • Coefficient Positive Temperature Technology, Trench FS • Switching Speed High • V Low Saturation Voltage: FGD5T120SH • tested 100% of the Parts I for Notes: 1. Vcc = 600 V,V Tjmax by Limited 2. Absolute Maximum Ratings Maximum Absolute ©2015 Fairchild Semiconductor Corporation Semiconductor Fairchild ©2015 1.0 FGD5T120SH Rev. FGD5T120SH — 1200 V,FGD5T120SH 5 A FS Trench IGBT Thermal Characteristics Symbol Parameter FGD5T120SH Unit o RθJC (IGBT) Thermal Resistance, Junction to Case, Max. 1.8 C/W o RθJA Thermal Resistance, Junction to Ambient, Max. (3) 50 C/W

Notes : 3. Mounted on 1” squre PCB (FR4 or G-10 material) Package Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Qty per Tube FGD5T120SH FGD5T120SH TO-252 A03 380 mm 16 mm 2500

Electrical Characteristics of the IGBT TC = 25°C unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Unit

Off Characteristics

BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 uA 1200 - - V Δ BVCES Temperature Coefficient of Breakdown o / Δ VGE = 0 V, IC = 250 uA -1.2-V/C TJ Voltage μ ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 A ± IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - 400 nA

On Characteristics

VGE(th) G-E Threshold Voltage IC = 5 mA, VCE = VGE 2.5 3.5 4.5 V

IC = 5 A, VGE = 15 V -2.93.6V VCE(sat) Collector to Emitter Saturation Voltage IC = 5 A, VGE = 15 V, o -4.5- V TC = 150 C

Dynamic Characteristics

Cies Input Capacitance - 209 - pF V = 30 V V = 0 V, C Output CapacitanceCE , GE - 11 - pF oes f = 1 MHz Cres Reverse Transfer Capacitance - 2 - pF

Switching Characteristics

Td(on) Turn-On Delay Time -4.8- ns

Tr Rise Time - 20.8 - ns T Turn-Off Delay Time - 24.8 - ns d(off) VCC = 600 V, IC = 5 A, Ω T Fall TimeRG = 30 , VGE = 15 V, - 104 - ns f o Inductive Load, TC = 25 C Eon Turn-On Switching Loss - 247 - uJ

Eoff Turn-Off Switching Loss - 94 - uJ

Ets Total Switching Loss - 341 - uJ

Td(on) Turn-On Delay Time -4.8- ns

Tr Rise Time - 40 - ns T Turn-Off Delay Time - 25.6 - ns d(off) VCC = 600 V, IC = 5 A, Ω T Fall TimeRG = 30 , VGE = 15 V, - 134 - ns f o Inductive Load, TC = 150 C Eon Turn-On Switching Loss - 393 - uJ

Eoff Turn-Off Switching Loss - 114 - uJ

Ets Total Switching Loss - 507 - uJ

Qg Total Gate Charge -6.7-nC VCC = 600 V, IC = 5 A, Qge Gate to Emitter Charge - 1.8 - nC VGE = 15 V Qgc Gate to Emitter Charge - 2.6 - nC

Typical Performance Characteristics

Figure 1. Typical Output Characteristics Figure 2. Typical Output Characteristics 15 12 o 15V o TC = 25 C VGE = 17V TC = 150 C VGE = 17V

12 13V 15V 9 [A] [A] C C 13V 9 11V 11V 6

6 9V 9V 3 Collector Current, I Collector Current,I 3 7V 7V

0 0 246810 0246810 Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]

Figure 3. Typical Saturation Voltage Figure 4. Transfer Characteristics Characteritics 15 15 Common Emitter Common Emitter VCE = 20V VGE = 15V 12 o 12 TC = 25 C

o [A] C [A] TC = 150 C C 9 9 o -40 C 150oC

6 6 o TC = 25 C Collector Current, I

Collector Current, I Current, Collector 3 3

0 0 0246810 0481216 Collector-Emitter Voltage, VCE [V] Gate-Emitter Voltage,VGE [V]

Figure 5. Saturation Voltage vs. Case Figure 6. Saturation Voltage vs. VGE Temperature at Variant Current Level

10 20 Common Emitter Common Emitter V = 15V GE T = -40oC [V] 10A C [V] CE 8 CE 16 V ,

6 12

5A 5A 8 4 IC = 3A 10A

IC = 3A 4 Collector-Emitter Voltage, V Voltage, Collector-Emitter

2 Collector-Emitter Voltage

0 25 50 75 100 125 150 o 4 8 12 16 20 Collector-Emitter Case Temperature, TC [ C] Gate-Emitter Voltage, VGE [V]

Typical Performance Characteristics

Figure 7. Saturation Voltage vs. VGE Figure 8. Saturation Voltage vs. VGE

20 20 Common Emitter o TC = 25 C [V]

[V] 16 CE 16 CE V

, 5A

12 12 IC = 3A 10A

5A 8 8 IC = 3A 10A

4 4 Common Emitter Collector-Emitter Voltage o Collector-Emitter Voltage, V Voltage, Collector-Emitter TC = 150 C 0 0 4 8 12 16 20 4 8 12 16 20 Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V]

Figure 9. Capacitance Characteristics Figure 10. Gate Charge Characteristics 500 15 Common Emitter o TC = 25 C 400V C 12 ies [V]

100 GE VCC = 200V 600V 9

Coes 6 10 Capacitance [pF] Capacitance

Common Emitter C 3

res V Voltage, Gate-Emitter VGE = 0V, f = 1MHz o TC = 25 C 1 0 5 1015202530 02468 Collector-Emitter Voltage, VCE [V] Gate Charge, Qg [nC]

Figure 11. SOA Characteristics Figure 12. Turn-on Characteristics vs. Gate Resistance 50 100

tr 10 10μs

[A] DC c 100μs 1ms 1 10 ms 10 td(on)

Common Emitter V = 600V, V = 15V 0.1 *Notes: CC GE Switching Time [ns]

Collector Current, I Current, Collector o IC = 5A 1. TC = 25 C o o TC = 25 C 2. TJ = 150 C o 3. Single Pulse TC = 150 C 0.01 1 1 10 100 1000 3000 30 60 90 120 150 Gate Resistance, R [Ω] Collector-Emitter Voltage, VCE [V] G

Typical Performance Characteristics

Figure 13. Turn-off Characteristics VS. Figure 14.Turn-on Characteristics VS. Gate Resistance Collector Current 100 1000 Common Emitter Common Emitter V = 15V, R = 30Ω VCC = 600V, VGE = 15V GE G o IC = 5A TC = 25 C o o TC = 25 C T = 150 C C tr o TC = 150 C tf 10

100

td(on) td(off) Switching Time [ns] Switching Time Switching Time [ns]

1 10 30 60 90 120 150 246810 Gate Resistance, RG [Ω] Collector Current, IC [A]

Figure 15.Turn-off Characteristics VS. Figure 16.Switching Loss VS. Collector Current Gate Resistance

1000 1000 Common Emitter V = 15V, R = 30Ω GE G E o on TC = 25 C o TC = 150 C tf

100 100

Eoff Common Emitter

VCC = 600V, VGE = 15V t Switching Time[ns] d(off) I = 5A Switching Loss [uJ] C o TC = 25 C o TC = 150 C 10 10 246810 30 60 90 120 150 Collector Current, IC [A] Gate Resistance, RG [Ω] Figure 17. Switching Loss VS. Figure 18. Current Derating Collector Current

1000 10

Eon 8

6 100

Eoff 4 Common Emitter V = 15V, R = 30Ω , Collector Current [A] Switching Loss [uJ] Switching Loss GE G

o CE I TC = 25 C 2 o TC = 150 C 10 246810 0 25 50 75 100 125 150 o Collector Current, IC [A] Case temperature, TC [ C]

Figure 19. Load Current Vs. Frequency

25 Square Wave o TJ <= 150 C, D = 0.5, VCE = 600V 20 Ω VGE = 15/0V, RG = 30

o TC = 25 C 10 Collector Current, [A] Current, Collector

0 1k 10k 100k 1M Switching Frequency, f[Hz]

Figure 20. Transient Thermal Impedance of IGBT

1 0.5

0.2

0.1 0.05 PDM 0.02 0.1 t1 0.01 t2

Thermal Response[Zthjc] Duty Factor, D = t1/t2 single pulse Peak Tj = Pdm x Zthjc + TC 0.03 1E-5 1E-4 1E-3 0.01 0.1 1 Rectangular Pulse Duration [sec]

Figure 21. TO252 (D-PAK), Molded, 3-Lead, Option AA&AB

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Rev. I77

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