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Home , IBM Fellow, Nick Holonyak

Laureates of the National Medal of Science and the National Medal of Technology and Innovation:

ver the years, many ECS An ECS “Hall of Fame” members have been recognized Ofor their contributions and by Krishnan Rajeshwar accomplishments as scientists and engineers outside of the Society community. Few awards or prizes match the cachet associated with the the National Medal of Science™ and the National Medal of Technology and Innovation™, especially given that these prestigious honors consider the societal impact of a candidate’s work. In the words of the National Science & Technology Medals Foundation Executive Director, ECS Hall of Fame Robin Rathmann-Noonan, the work must A list of ECS members who have received the Medals. have “saved lives, asked and answered important questions, and helped shape National Medal of Science the course of this country and the planet.” Alfred Cho (1993) In this article, we profile some past and (1993) recent awardees of the National Medal (1990) of Technology and Innovation and the Rudolph Marcus (1989) National Medal of Science programs, who Fred Seitz (1973) are also (or have been) ECS members. (1965) Before we do that, the awards themselves are briefly introduced. National Medal of Technology and Innovation Adam Heller (2007) The National Medal of C. Grant Willson (2007) Technology and Innovation Alfred Cho (2005) Nick Holonyak (2002) This medal (formerly known as Jerry Woodall (2001) the National Medal of Technology) is Wilson Greatbatch (1990) the highest honor for technological (1990) achievement bestowed on American innovators by the President of the . To quote from the award brochure, “It celebrates remarkable people whose vision, creativity, and brilliance truly reflect the uniquely American spirit of innovation. This spirit makes it possible for our country makes recommendations to the recognizing their sterling contributions to lead the world in scientific discovery President for a final decision. The to humanity’s wealth of knowledge and and technological development. These United States Patent and Trademark spirit of discovery.” American innovators are a wellspring of Office is responsible for administering An elite committee of 14 scientists opportunity, employment, and progress the National Medal of Technology and and engineers (including two ex officio for the entire country. More than that, Innovation program. members (the Director of the Office they also serve as an inspiration to of Science & Technology, and the the next generation of innovators, so The National Medal of Science President of the National Academy of necessary to America’s future.” This last Sciences) is appointed by the President statement could not ring truer in the This was established in 1959 to to evaluate the nominees for the Award. light of recent concerns expressed about honor individuals deserving of special Since its inception, the National Medal the erosion of American leadership in recognition for their outstanding of Science has been awarded to 442 technological prowess and innovation. contributions to knowledge in the distinguished scientists and engineers. Established by Congress in 1980, following fields: physical, biological, The National Science Foundation the President has presented 182 mathematical, engineering, social, administers this award for the White awards to individuals, teams, and and behavioral sciences. Again to House. companies since 1985. After evaluation quote from the award brochure: “The It is of interest to note that awards by a distinguished committee, recom- National Medal of Science highlights have been made posthumously in both mendations are forwarded to the the benefits bestowed on society by cases, a practice departing from, for Secretary of Commerce, who then the very best minds in modern science, (continued on next page) The National Medal of Technology and Innovation and the Medal design are trademarks of the U.S. Department of Commerce and are used with permission.

The Electrochemical Society Interface • Spring 2009 37 (continued from previous page)

example, the Nobel prizes. In the NMTI case, teams of researchers and companies are also eligible for recognition along with individuals, again unlike other ECS Members Receive National awards and prizes. Out of the “Hall of Fame” of ECS member medalists (see Medal of Technology and Innovation box on page 37), three recent awardees, Adam Heller (2007), C. Grant Willson (2007), and Jerry Woodall (2001), and their contributions are discussed below.

Adam Heller

Adam Heller received his MSc (chemistry and physics, 1957) and PhD (chemistry, 1961) from the Hebrew University, Jerusalem, where he studied under Ernst David Bergmann. Following postdoctoral work at UC Berkeley and at Bell Laboratories, he joined GTE Laboratories becoming Manager of Exploratory Research in 1970. In 1975 he returned to Bell Laboratories, heading from 1977 until 1988 the Electronic Materials Research Department, where he managed research on the materials science underlying high-density, high- frequency chip-interconnections, used in small portable electronic devices. He was appointed to the Ernest Cockrell, Sr. ECS member Adam Heller (center) received the National Medal of Technology Chair in Engineering at The University and Innovation in Washington, DC, in September 2008. Joining him at the of Texas at Austin in 1988 and became dinner in honor of the Laureates were (from left to right): Interface Editor one of the university’s first research Krishnan Rajeshwar, Ben Feldman (see story), Heller, Tim Goodnow (Divisional professors in 2002. Vice President, Abbott Diabetes Care), and ECS Executive Director Roque Calvo. Heller built, in 1966, the first inor- ganic liquid . In 1973 he published, with James J. Auborn, the first paper on one of the earliest lithium batteries, the lithium thionyl chloride battery, still manufactured and used worldwide. In 1978 he reported the first 11.5 % efficient photoelectrochemical solar , and in 1981 the first photoelectro- chemical cell converting sunlight to chemical energy, stored as hydrogen, at 12% efficiency. In 1991 he showed, with the late Heinz Gerischer, that the rate of photocatalytic oxidation of contaminants on small titanium dioxide particles was controlled by the rate of reduction of adsorbed oxygen by trapped electrons. Subsequently, with Michael Pishko and Ephraim Heller, he developed the materials science of binding the photocatalytic particles to surfaces. In 1995-7, with Yaron Paz, he then designed thin, transparent, photo-active films of titanium dioxide nanoparticles on window glass, which made the windows self-cleaning under ECS member C. Grant Willson (third from left) received the National Medal of sunlight, providing a route to the Technology and Innovation in Washington, DC, in September 2008. Joining him presently manufactured self-cleaning at the dinner in honor of the Laureates were (from left to right): Interface Editor windows. Krishnan Rajeshwar, Debbie Willson, Willson, and Lewis M. Terman (2008 Heller introduced (1988-1995) the President of IEEE). electrical connection (“wiring”) of redox centers of enzymes to electrodes through electron-conducting redox hydrogels. The redox hydrogel-wired enzymes effectively catalyze oxidation and reduction reactions of water-soluble biochemicals. Using the wired glucose- oxidation catalyzing enzyme glucose

38 The Electrochemical Society Interface • Spring 2009 oxidase, he designed subcutaneously disease. Its annual cost to the world implanted miniature glucose sensors, economy is more then 100 billion constituting the core of Abbott’s dollars. Diabetes complications can Significant Publications FreeStyle Navigator™ continuous be prevented by tightly controlling glucose monitoring system for diabetes the concentration of blood glucose. of the Medal Laureates management. The system enables Tight control, which still leaves the diabetic people to reduce or avoid diabetic person above or below the Listed below are publications that periods of high glucose, which are the desired glucose concentration range each of the medalists deemed most cause of the debilitating complications 1/3 of the time (about 8 hours a significant in terms of impact. of diabetes, and blackout-causing day), requires frequent (daily ~ 5) Annotations are added in some cases. periods of low glucose. The high and blood glucose assays. Six billion low periods now exceed 8 hours/day glucose assays are performed each Adam Heller even in those Type 1 diabetic people year, more than all other analytical who most carefully manage their assays combined. 1. A. Heller, “High-Gain Room- disease, measuring their blood glucose My son, Ephraim and I, co- Tmperature Liquid Laser: Trivalent concentrations 9 times/day. founded TheraSense™ to maintain Neodymium in Selenium Heller’s contributions to science are the health of diabetic people Oxychloride,” Appl. Phys. Lett., 9, 106 described in 226 peer reviewed papers, with less pain and better health. (1966). and 17 book chapters and reviews. They Through TheraSense, specifically were cited more than 13,000 times. through FreeStyle™, we succeeded 2. J. J. Auborn, K. W. French, S. I. This body of research is the basis for in removing the pain of monitoring Lieberman, V. K. Shah, and A. Heller, five presently manufactured products. by reducing the volume of blood “Lithium Anode Cells Operating His contributions to technology and required for the glucose assay and at Room Temperature in Inorganic engineering are described in 102 issued in reducing the complications of Electrolytic Solutions,” J. Electrochem. Soc., 120, 1613 (1973). U.S. Patents, 37 of which are in use. diabetes, by developing a continuous Other than the NMTI award, Heller glucose monitor, which broadcasts 3. A. Heller, B. A. Parkinson, and B. Miller, was earlier elected to the U.S. National the actual glucose concentration “A 12% Efficient - Academy of Engineering and was made and predicts impending high or Liquid Junction Solar Cell,” Proc. IEEE Fellow of the American Association for low glucose levels. It is a key step Photovoltaic Specialists Conference, 13, the Advancement of Science, Fellow in establishing the foundation for 1253 (1978). of The Electrochemical Society, and an integrated diabetes management Honorary Fellow of the American system, based on the continuously 4. A. Heller and R. G. Vadimsky, Institute for Medical and Biological broadcasting of the glucose “Efficient Solar to Chemical Con- Engineering. He was named Guest concentration from the monitor to version: 12% Efficient Photo-assisted Professor of the Collège de France and an insulin pump. Electrolysis in the [p-type InP(Ru)]/ received honorary doctorates from One of the first people we hired HCl-KCl/Pt(Rh) Cell,” Phys. Rev. Lett., Uppsala University in Sweden and from at TheraSense was an electrochemist, 46, 1153 (1981). Queen’s College of the City University Ben Feldman. Next, we added a 5. H. Gerischer and A. Heller, “The Role of New York. manufacturing engineer, Phil Plante. of Oxygen in Photo-Oxidation of Other medal recognitions include Both made key contributions to the Organic Molecules on Semiconductor the Spiers Medal of the Royal Society success of the company. The initial Particles,” J. Phys. Chem., 95, 5261 of Chemistry, UK; the Faraday Medal of focus of TheraSense was the enzyme (1991). the Royal Society of Chemistry, UK; the “wiring” based subcutaneously Medal of the Faculty of Engineering of implanted glu-cose sensor for 6. A. Heller, “Chemistry and Appli- the University of Tokyo; the Vittorio diabetes management. In 1996, cations of Photocatalytic Oxidation of de Nora Medal of The Electrochemical Ephraim conceived, and Ben and I Thin Organic Films,” Accounts Chem. Society; and the Fresenius Gold Medal designed, a second product, FreeStyle, Res., 28, 503 (1995). and Prize of the Society of German a microcoulometric blood glucose Chemists. His awards include the monitor for diabetes management. 7. Y. Paz, Z. Luo, L. Rabenberg, and A. Grahame Award of The Electrochemical It required an order of magnitude Heller, “Photo-oxidative Self-Cleaning Transparent Titanium Dioxide Films Society; the Battery Research Award less blood than other systems on the of The Electrochemical Society; the on Glass,” J. Mater. Res., 10, 2842 market, only 300 nL, a sample so (1995). Chemistry of Materials Award of small that it is painlessly obtained. The the American Chemical Society; the device takes advantage of the fact that 8. Y. Paz and A. Heller, “Photo- Creative Invention Award of the the smaller the blood volume, i.e., the Oxidatively Self-Cleaning Transparent American Chemical Society; the Reilly thinner the microcoulometer’s liquid Titanium Dioxide Films on Soda Award of the Electroanalytical Society; layer is, the faster its glucose is electro- Lime Glass: The Deleterious Effect and the Chemical Engineering Practice oxidized. We designed therefore a of Sodium Contamination and Its Award of the American Institute of thin-layer (50 µm) microcoulometer, Prevention,” J. Mater. Res., 12, 2759 Chemical Engineers. in which glucose is selectively electro- (1997). Given below are Dr. Heller’s own oxidized in a few seconds. It is the first reflections on the pioneering glucose mass-produced sub-microliter fluidic 9. B. Feldman, G. McGarraugh, A. sensor work. (Ed. Note: These are device, of which more than a billion Heller, N. Bohannon, J. Skyler, E. synthesized from two separate inter- units are produced annually. It is DeLeeuw, and D. Clarke, “FreeStyle: A Small-Volume Electrochemical views he gave to Keren Wulich of also the most accurate blood glucose The Globe and to Krishnan Rajeshwar Glucose Sensor for Home Blood monitor available to self monitoring Glucose Testing,” Diabetes Technology and Roque Calvo at the National diabetic people. It is more accurate & Therapeutics, 2, 221 (2000). Medal Awards Gala dinner in than the earlier amperometric blood Washington, DC.) glucose monitors, because the outcome 10. A. Gregg and A. Heller, “Cross-Linked Diabetes affects 300 million of coulometry is not affected by Redox Gels Containing Glucose people, which are 5% of the world’s temperature, blood viscosity, glucose Oxidase for Amperometric Biosensor population. Its complications are electro-oxidation catalyzing enzyme Applications,” Anal. Chem., 62, 258 a major cause of blindness, kidney activity, or by preferential electro- (1990). failure, amputation of limbs, oxidation of interferants. nerve degeneration, and vascular (continued on next page) (continued on next page)

The Electrochemical Society Interface • Spring 2009 39 Significant Publications...

(Adam Heller, cont’d.) (continued from previous page) of today’s advanced semiconductor 11. A. Heller, “Electrical Connection of devices, and is co-founder of Molecular In 1996 the company developed, Enzyme Redox Centers to Electrodes,” Imprints, Inc. J. Phys. Chem., 96, 3579 (1992). tested and manufactured on a Dr. Wilson will receive the 2009 ECS pilot scale (> 104 units per day) Gordon E. Moore Medal for Outstand- 12. E. Csoeregi, D. W. Schmidtke, and the painless home blood glucose ing Achievement in Solid-State Science A. Heller, “Design and Optimization monitor. In 1996 the company was and Technology at the upcoming of a Selective Subcutaneously financed by venture capital and ECS meeting in San Francisco. He is Implantable Glucose Electrode Based at the end of 1996, Mark Lortz, a member of the ACS, APS, SPIE, SPE, on ‘Wired’ Glucose Oxidase,” Anal. formerly the VP of Operations of AAAS, ASEE, and Sigma Xi; a Fellow of Chem., 67, 1240 (1995). J&J Lifescan, was hired as the new PMSE and SPIE; and a member of the CEO of the company. The U.S. FDA National Academy of Engineering. He 13. J. G. Wagner, D. W. Schmidtke, C. P. approved the painless, 300 nL blood is an associate editor of one ACS journal Quinn, T. F. Fleming, B. Bernacky, and sample-analyzing, glucose monitor and serves on the editorial boards of A. Heller, “Continuous Amperometric of TheraSense for use by diabetic several others. He is the co-author of Monitoring of Glucose in a Brittle people in 2000. This monitor, Diabetic Chimpanzee with a more than 400 journal publications marketed under the name FreeStyle Miniature Subcutaneous Electrode,” and the editor and author of several Proc. Nat. Acad. Sci., 95, 6379 (1998). assayed the glucose concentration books, and co-inventor on more than in 300 nanoliters of blood. This 50 issued patents. 14. A. Heller and B. Feldman, blood volume, about 1/8th of a Dr. Willson’s work has been honored “Electrochemical Glucose Sensors typical mosquito blood meal, is by the Arthur Doolittle Award, the and Their Applications in Diabetes small enough to be painlessly Chemistry of Materials Award, the Management,” Chem. Rev., 108, 2482 obtained. With more than a billion Carothers Award from the American (2008). units produced annually, FreeStyle Chemical Society, the Alexander von is arguably the highest impact Humboldt Senior Scientist Award from C. Grant Willson nanotechnological or microfluidic the Federal Republic of Germany, the device to-date. ACS Award for Cooperative Research in 1. W. Heath, F. Palmieri, J. Adams, Using the wired glucose-oxida- Polymer Science and Engineering, the B. Long, J. Chute, T. Holcombe, S. tion catalyzing enzyme glucose SRC Technical Excellence Award, the Zieren, M. Truitt, J. White, and C. G. oxidase, we have designed SRC Aristotle Award, and the Malcolm Willson, “Degradable Cross-Linkers subcutaneously implanted E. Pruitt Award from the CRC. He is the and Strippable Imaging Materials miniature glucose sensors. These recipient of the 1999 National Academy for S-FIL,” Macromolecules, 41, 719 are the core of the Abbott’s (2008). of Sciences Award for Chemistry in FreeStyle Navigator continuous Service to Society. He was appointed 2. K. Wu, X. Wang, E. K. Kim, C. glucose monitoring system for Fellow of the PMSE Division of ACS G. Willson, and J. G. Ekerdt, diabetes management. The system in 2001 and received the Applied “Experimental and Theoretical enables diabetic people to reduce Polymer Science Award from the ACS Investigation on Surfactant or avoid periods during which their in that year. In 2003 he received the Segregation in Imprint Lithography,” glucose levels are high, increasing Photopolymer Science and Technology Langmuir, 23, 1166 (2007). the prevalence of complications of Award in Japan and in 2005 he received diabetes, or low, increasing the risk the Dehon Little Award from the AIChE, 3. F. Palmieri, J. Adams, B. Long, W. of blackouts. the Zernike Award from the SPIE, and Heath, P. Tsiartas, and C. G. Willson, the Heroes in Chemistry Award from “Design of Reversible Cross-Linkers for C. Grant Willson the ACS. In 2007 he was elected a Step and Flash Imprint Lithography Fellow of SPIE and was the recipient of Imprint Resists,” ACS Nano, 1, 307 C. Grant Willson joined the (2007). the SEMI North America Award and the faculties of the Departments of Presidential Medal for Technology and 4. B. K. Long, B. Keitz, B. Keith, and C. G. Chemical Engineering and Chemistry Innovation. Willson, “Materials for Step and Flash at the University of Texas at Austin in The attribution for the Medal was Imprint Lithography (S-FIL),” J. Mater. 1993. He received his BS and PhD in “For creation of novel lithographic Chem., 17, 3575 (2007). organic chemistry from the University imaging materials and techniques of California at Berkeley and an MS that have enabled the manufacturing 5. W. L. Jen, F. Palmieri, B. Chao, M. degree in organic chemistry from San of smaller, faster and more efficient Lin, J. Hao, J. Owens, K. Sotoodeh, Diego State University. He came to the microelectronic components that R. Cheung, and C. G. Willson, University of Texas from his position better the quality of the lives of “Multilevel Step and Flash Imprint as an IBM Fellow and Manager of the people worldwide and improve Lithography for Direct Patterning Polymer Science and Technology area the competitiveness of the U.S. of Dielectrics,” Proc. SPIE, 19, 6517 at the IBM Almaden Research Center microelectronics.” (2007). in San Jose, California. He joined IBM after serving on the faculties of 6. R. Pawloski, A. Acheta, H. J. Levinson, Jerry M. Woodall T. B. Michaelson, A. Jamieson, Y. California State University, Long Beach Nishimura, and C. G. Willson, “Line and the University of California, San Woodall began his research career at Edge Roughness and Intrinsic Bias Diego. IBM in 1962, becoming a Fellow of the for Two Methacrylate Polymer Resist Dr. Willson’s research can be renowned Thomas J. Research Systems,” J. Microlith., Microfab., characterized as the design and Center in 1985. He completed a BS Microsyst., 5, 023001 (2006). synthesis of functional organic in metallurgy from MIT and a PhD in materials with an emphasis on from Cornell (continued on next page) materials for microelectronics. These University. He held the Charles William include monomeric and polymeric Harrison Distinguished Professorship liquid crystalline materials, polymeric of Microelectronics at Purdue non-linear optical materials, novel University from 1993 through 1999. photoresist materials, etc. He is co- After stints as the C. Baldwin Sawyer inventor of the chemically amplified Professor of Electrical Engineering at photoresists used to manufacture all Yale University and the Chief Science

40 The Electrochemical Society Interface • Spring 2009 Significant Publications...

Officer of LightSpin Technologies, Inc, world market for GaAs-based electronic (C. Grant Willson, cont’d.) Woodall currently holds the Barry M. and photoelectronic devices involves 7. C. Taylor, R. J. LeSuer, C. R. Chambers, and Patricia L. Epstein Distinguished GaAlAs/GaAs heterojunction devices F-R. F. Fan, A. J. Bard, W. E. Conley, Professor of Electrical and Computer of the kind that have grown out of his and C. G. Willson, “Experimental Engineering at Purdue University. efforts. Techniques for Detection of In a career spanning more than Woodall’s efforts are recorded in Components Extracted from Model four decades, Jerry M. Woodall has more than 275 publications in the open 193 nm Immersion Lithography conducted pioneering research in literature, 67 issued U.S. patents, and 1 Photoresists,” Chem. Mater., 17, 4194 compound semiconductor materials patent pending. He has received five (2005). and devices, touching off an major IBM Research Division Awards, explosion of research and commercial 30 IBM Invention Achievement 8. E. K. Kim, M. D. Stewart, K. Wu, F. L. development in related fields. The Awards, and an IBM Corporate Award Palmieri, M. D. Dickey, J. G. Ekerdt, cellular phone, the TV remote control, in 1992 for the invention of the and C. G. Willson, “Vinyl Ether the CD player, local-area networks GaAlAs/GaAs heterojunction. Other Formulations for Step and Flash (LANs) used in computing, the solar recognition includes 9 NASA certificates Imprint Lithography,” J. Vac. Sci. Technol. B, 23, 2967 (2005). cells on the Mars Pathfinder Space of recognition; a 1975 IR-100 Award; Probe—all these devices, and others, the 1980 Electronics and Photonics 9. D. Gates, Q. Xu, M. Stewart, R. stem from Woodall’s work. Division Award of The Electrochemical Deschner, C. G. Willson, and G. Woodall’s most significant accom- Society (ECS); the 1985 ECS Solid Whitesides, “New Approaches to plishments are his co-invention and State Science and Technology Award; Nanofabrication: Molding, Printing, development of the liquid-phase the 1990 American Vacuum Society’s and Other Techniques,” Chem. Rev., epitaxial growth of gallium aluminum (AVS) Medard Welch Award, its highest 105, 1171 (2005). arsenide (GaAlAs), and the co-invention honor; the 1998 American Society of the gallium aluminum arsenide- for Engineering Education’s General 10. G. M. Schmid, M. D. Stewart, S. D. gallium arsenide (GaAlAs/GaAs) Electric Senior Research Award; and the Burns, and C. G. Willson, “Mesoscale heterojunction. GaAlAs epitaxial layers 1998 Edward Goodrich Acheson Award Monte Carlo Simulation of Photoresist form the bases of many important from ECS, one of its highest honors. Processing,” J. Electrochemical Soc., commercial high-speed electronic and Woodall was elected to the National 151, G155 (2004). Academy of Engineering in 1989 and is photonic devices, including super- 11. M. Colburn, B. J. Choi, S. V. bright red LEDs, solid-state , and a Fellow of ECS, the American Physical Sreenivasan, R. T. Bonnecaze, and ultra-fast transistors. The GaAlAs/GaAs Society, IEEE, and AVS. He has served C. G. Willson, “Ramifications of interface currently comprises the most as President of ECS and AVS and is a Lubrication Theory on Imprint important compound semiconductor member of the American Institute of Lithography,” Microelec. Eng., 75, 321 heterojunction. It is commercially Physics Board of Directors and Executive (2004). important for electronic and photonic Committee. In 1997-98 Eta Kappa devices, and it has led to such new areas Nu recognized him with its Vladimir 12. M. D. Stewart, H. V. Tran, G. M. of solid-state physics as superlattice, Karapetoff Eminent Member’s Award Schmid, T. B. Stachowiak, D. J. Becker, low-dimension, mesoscopic, and for “the invention of the GaAlAs/GaAs and C. G. Willson, “Acid Catalyst resonant tunneling physics. heterojunction, and for the invention, Mobility in Resist Resins,” J. Vac. Sci. In addition, Woodall pioneered development, and realization of & Tech. B, 20, 2946 (2002). the horizontal Bridgman growth of devices that use this materials system. 13. S. Johnson, D. J. Resnick, D. Mancini, both high-purity GaAs crystals, used These include light-emitting diodes, K. Nordquist, W. J. Dauksher, K. lasers, heterojunction transistors, and for the first definitive measurement Gehoski, J. H. Baker, L. Baker, A. of the carrier velocity-electric field solar cells.” (This award recognizes Dues, A. Hooper, T. C. Bailey, S. V. relationships for GaAs, and highly only those inventions that have had a Sreenivasan, J. G. Ekerdt, and C. G. perfect GaAs crystals used to fabricate significant impact on society.) Woodall Willson, “Fabrication of Multi-Tiered early injection lasers. He then pioneered also received IEEE’s Jack A. Morton Structures on Step and Flash Imprint and patented the development of the Award in 1984 for “pioneering work Lithography Templates,” Microelec. liquid-phase epitaxy of silicon-doped in GaAlAs heterojunctions and high- Eng., 67-68, 221 (2003). GaAs high-efficiency light-emitting efficiency light-emitting diodes and diodes (LEDs), devices found in the injection lasers prepared by liquid- 14. G. Willson, B. C. Trinque, B. P. now ubiquitous TV remote control phase epitaxy;” and the Gallium Osborn, C. R. Chambers, Y. T. Hsieh, and in infrared LANs. He followed this Arsenide Symposium Award and T. Chiba, P. Zimmerman, D. Miller, work with the invention of GaAlAs and Heinrich Welker Gold Medal in 1988 and W. Conley, “The Design of Resist GaAlAs/GaAs heterojunctions used in for his “pioneering work introducing Materials for 157 nm Lithography,” super-bright-red LEDs and lasers used, the III-V alloy GaAlAs and his further J. Photopolymer Sci. & Tech., 15, 583 for example, in CD players and short- fundamental contributions to III-V (2002). link optical fiber communications. compound semiconductor physics.” 15. M. Colburn, S. Johnson, S. Damle, Further breakthroughs include the The NMTI award citation reads, “For T. Bailey, B. Choi, M. Wedlake, T. patenting of a bipolar transistor the invention and development of Michaelson, S. V. Sreenivasan, J. used in cellular phones (and other technologically and commercially Ekerdt, and C. G. Willson, “Step applications) and the development important compound semiconductor and Flash Imprint Lithography: A of the pseudomorphic high-electron- heterojunction materials, processes, New Approach to High-Resolution mobility transistor (HEMT), a state- and related devices, such as light- Patterning,” Proc. SPIE, 3676, 379 of-the-art high-speed device widely emitting diodes, lasers, heterojunction (1999). used in commercial devices and transistors, and solar cells.” circuits and employed in the creation Reproduced are Woodall’s remarks 16. P. C. Tsiartas, L. W. Flanagin, C. L. of “self-organized” quantum dots, a at the Department of Commerce award Henderson, W. D. Hinsberg, I. C. topic of intense interest in physics. ceremony, upon receiving the NMTI Sanchez, R. T. Bonnecaze, and C. Woodall’s current work involves the Medal. G. Willson, “The Mechanism of epitaxial growth of III-V materials I want to express my appreciation Phenolic Polymer Dissolution: A New Perspective,” Macromolecules, 30, 4656 and devices with special emphasis on and gratitude to all those at the (1997). metal contacts and doping studies. Department of Commerce associated More than half the estimated $5 billion (continued on next page) (continued on next page) The Electrochemical Society Interface • Spring 2009 41 Significant Publications...

(C. Grant Willson, cont’d.) (continued from previous page) solid alloys comprised of 95% Al and a 5% mixture of Ga, indium (In), and tin 17. S. A. MacDonald, W. D. Hinsberg, with the award of the National Medal (Sn) were capable of this same reaction H. R. Wendt, N. J. Clecak, C. G. of Technology, and particularly to at room temperature. This reaction has Willson, and C. D. Snyder, “Airborne Secretary Evans, Deputy Secretary Contamination of a Chemically a total theoretical energy density of 8.6 Bodman, and Under Secretary Bond. kWh/kg of Al, 4.4 kWh of which is the Amplified Resist. 1. Identification I also want to thank my colleagues, of Problem,” Chem. Mater., 5, 348 heat of combustion of hydrogen, and especially Hans Rupprecht and (1993). 4.2 kWh of which is heat. This reaction Seymour Keller, who, over the years would provide a significantly higher 18. J. G. Maltabes, S. J. Holmes, J. R. have contributed so much to my energy density than both traditional Morrow, R. L. Barr, M. Hakey, G. personal success in the laboratory, and modern chemical batteries. Reynolds, W. R. Brunsvold, C. G. and to my friends and relatives for The Al-(Ga,In,Sn) alloy system Willson, N. Clecak, S. MacDonald, their enthusiasm and support of can be used to produce on-demand and H. Ito, “1X Deep UV Lithography my career. In this regard, I want hydrogen gas from water for portable with Chemical Amplification for 1- to acknowledge my cousin, David power applications and potable water Micron DRAM Production,” Advances Brownwood, who is here today, who generation. Three relevant issues in Resist Technology and Processing grew up with me, and, being several contribute to the life-cycle inventory VII, Proc. SPIE, 1262, 2 (1990). years older than I, would come of this system. First, large-scale home from school and teach me 19. C. G. Willson, H. Ito, J. M. J. manufacturing of the alloy will be everything he had learned that day! possible using either current inventories Frechet, and F. Houlihan, “Chemical Finally, I want to give special Amplification in the Design of of scrap Al (400 billion kg) or available thanks to Mildred Porter for her Polymers for Resist Applications,” reserves of bauxite (10 trillion kg) IUPAC, 28, 448 (1982). tireless and patient effort to pull this and Ga produced as a byproduct of thing off, and, who showed me that Al manufacturing. Second, the Ga, In, 20. C. G. Willson, H. Ito, and J. M. J. planning for events at the White and Sn in the alloy are inert and can Frechet, “L’Amplification Chimique House is best expressed by the word therefore be completely recovered for Appliquée au Dévelopement de “fickle.” Seriously though, I am truly reuse in future alloy products to reduce Polymères Utilisables Comme Résines overwhelmed by this honor. For in costs. Third, the alumina product of the de Lithographie,” Colloque Inter. my youth and college days I was reaction can be electrolyzed back to Al sur la Microlithographie: Microcircuit on no one’s list as a person most at a current efficiency of 12.9 kWh/Kg of Engineering, 82, 261 (1982). likely to succeed. I was a poor or Al, which allows this method of energy at least no better than an average storage and transport to be sustainable Jerry Woodall undergraduate student during my indefinitely. Therefore, an economically time at MIT, graduating with a viable life cycle inventory for large- 1. H. Rupprecht, J. M. Woodall, K. C average and flunking my E&M scale hydrogen generation could be Konnerth, and D. G. Pettit, “Efficient course along the way! However, Electro-luminescence from GaAs accomplished by expanding current thanks to Prof. , who production capacity. Woodall reckons Diodes at 300K,” App. Phys. Lett., 9, took me on as my undergraduate 221 (1966). This was the first report that lifecycle impact assessment of this thesis advisor, I discovered that I of a high-efficiency LED, the first production expansion would require fabrication of an LED by the liquid- was good in the laboratory. And local carbon sequestration at the phase epitaxy (LPE) method, and the rest, as they say, is history. And smelter or employing carbon neutral the first use of Si as both an n-type now my life’s work on compound electrodes for the electrolysis. and p-type dopant. To date, this semiconductor heterojunctions and LED remains the LED of choice for heterojunction-based materials and Concluding Remarks IR signal, control, and IR LAN. It is devices is being honored and at the covered by a U.S. patent. very highest level. So, I am now a It is abundantly clear from the happy camper invigorated to return preceding paragraphs (and from the 2. H. Rupprecht, J. M. Woodall, and to the laboratory and classroom to contents of this celebratory special issue G. D. Pettit, “Efficient Visible mentor students to follow in my of the magazine in general) that ECS Electroluminescence at 300K from footsteps. members have carved an impressive GaAlAs p-n Junctions Grown by Since the NMTI award in 2001, we niche in the annals of scientific Liquid Phase Epitaxy,” Appl. Phys. are happy to report that Jerry Woodall Lett., 11, 81 (1967). The first useful achievements. While as illustrated has not been resting on his laurels at above, Adam Heller, Grant Willson, demonstration of the lattice-matched all. His latest passion is the problem heterojunction, this publication and Jerry Woodall are three shining of hydrogen generation and storage. opened the field of heterojunction examples of such individuals whose research in general. In his view, elemental aluminum (Al) contributions have been recognized has the potential to be a commercially by organizations outside of the 3. J. M. Woodall and H. J. Hovel, “High viable means of reaching such a goal. Society, others (e.g., Rudy Marcus and Efficiency Ga1-xAlxAs - GaAs Solar While it is well documented that it is Gordon Moore) were featured in these Cells,” Appl. Phys. Lett., 21, 379 thermodynamically possible to react magazine pages in previous issues. ECS (1972). This seminal publication Al with water to produce hydrogen is proud to claim all these “Hall of demonstrated the use of GaAlAs/ gas, aluminum oxide (alumina), and Famers” as members of its family. The GaAs for high-efficiency solar cells heat, the self-passivating nature of pronoun “great” is often used lightly and showed that this heterojunction pure Al into alumina in air or water has but it certainly applies to describe these greatly reduced surface recombination prevented this from being exploited scientists. in GaAs. on a large scale. However, in the late (continued on next page) 1960s, while at IBM Research, Woodall discovered that liquid alloys of gallium (Ga) and Al are capable of disrupting the passivating alumina layer thus enabling the Al to produce hydrogen from water. Much more recently, researchers at Purdue University, under Prof. Woodall’s supervision, have shown that bulk

42 The Electrochemical Society Interface • Spring 2009 Significant Publications...

(Jerry Woodall, cont’d.)

4. W. P. Dumke, J. M. Woodall, 10. R. C. Gee, T. P. Chin, C. W. Tu, P. M. 16. M. D. Pashley, K. W. Haberern, W. and V. L. Rideout, “GaAs-GaAlAs Asbeck, C. L. Lin, P. D. Kirchner, and Friday, J. M. Woodall, and P. D. Heterojunction Transistor for High J. M. Woodall, “InP/InGaAs HBTs Kirchner, “The Structure of GaAs (001) Frequency Operation,” Solid State Grown by GSMBE with Carbon (2x4)-c(2x8) Determined by Scanning Electronics, 15, 1339 (1972). This Doped Base,” IEEE Electron Device Tunneling Microscopy,” Phys. Rev. Lett., research marked the first realization of Lett., 13, 247 (1992). This HBT device 60, 2176 (1988). The very first report HBTs and forms the basis of the power is thought to be a strong candidate for of scanning tunneling microscopy amplifier stage of current cellular the next-generation technology for of MBE-grown GaAs surfaces, this phones. cellular phones. It was demonstrated paper was cited at the plenary session through a manufacturing technology of the International Conference 5. J. Rosenberg, M. Benlarmi, P. of choice. of the Physics of , D. Kirchner, J. M. Woodall, and 1988, Warsaw, Poland. It was the G. D. Pettit, “An InGaAs/GaAs 11. J. J. Cuomo, J. F. Ziegler, and J. M. first experimental proof of current Pseudomorphic Single Quantum Woodall, “A New Concept for Solar theories for the atomic structure of Well HEMT,” IEEE Electron Device Lett., Energy Thermal Conversion,” Appl. GaAs surfaces. 6, 491 (1985). This paper describes Phys. Lett., 26, 557 (1975). This was what continues to be the device of a revolutionary way to efficiently 17. L. J. Brillson, M. L. Slade, R. E. choice for low-noise small-signal convert solar energy into heat. Viturro, M. K. Kelly, N. Tache, G. amplification in many applications, Margaritondo, J. M. Woodall, P. D. including cellular phones. 12. S. D. Offsey, J. M. Woodall, A. Kirchner, G. D. Pettit, and S. L. Wright, C. Warren, P. D. Kirchner, T. C. “Absence of Fermi-Level Pinning at 6. D. L. Rogers, J. M. Woodall, G. D. Pettit, Chappell, and G. D. Pettit, “Unpinned Metal-InGaAs(100) Interfaces,” Appl. and D. McInturff, “High Performance, (100) GaAs Surfaces in Air Using Phys. Lett., 48, 1458 (1986). A seminal 1.3 Micron, GaInAs Detectors Photochemistry,” Appl. Phys. Lett., paper that demonstrates Schottky Fabricated on GaAs Substrates,” IEEE 48, 475 (1986). This was a seminal limit behavior (no Fermi-level Electron Device Lett., 9, 515 (1988). demonstration that the problem of pinning) for MBE-grown GaInAs and This is the first demonstration of an Fermi-level pinning at GaAs surfaces low-temperature deposition of metals. enabler to allow the integration of could be eliminated and, hence, was It also demonstrates the validity of InGaAs 1.3-1.5 photonic devices with not due to a fundamental physical paper 13 above. GaAs high-speed electronic circuits. limitation. This opened the way to the subsequent demonstration of 18. J. M. Woodall, “Solution Grown 7. J. M. Woodall, J. Freeouf, G. D. Pettit, a GaAs MOS technology and new Ga1-xAlxAs Superlattice Structures,” T. N. Jackson, and P. D. Kirchner, surface passivation techniques. J. Crystal Growth, 12, 32 (1972). The “Ohmic Contacts to n-GaAs Using first report of fabricating superlattice Graded Band Gap Layers of GaInAs 13. J. Freeouf and J. M. Woodall, “Schottky structures using GaAlAs/GaAs Grown by MBE,” J. Vac. Sci. & Tech., Barriers: An Effective Workfunction materials. The invention of the 19, 626 (1981). This is a state-of- Model,” Appl. Phys. Lett., 39, 727 semiconductor superlattice and its the-art ohmic contact widely used (1981). This paper provided a new way physics on GaAlAs/GaAs has led to by companies that fabricate HBTs of understanding Fermi-level pinning many prizes and awards. for applications that include cellular at compound semiconductor surfaces. phones. Its technological implications led to, 19. R. M. Feenstra, J. M. Woodall, and G. e.g., the results of paper 12 above. D. Pettit, “Observation of Bulk Defects 8. P. E. Dodd, M. L. Lovejoy, M. by Scanning Tunneling Microscopy S. Lundstrom, M. R. Melloch, 14. J. M. Woodall, G. D. Pettit, T. N. and Spectroscopy: Arsenic Antisite J. M. Woodall, and J. D. Pettit, Jackson, C. Lanza, K. Kavanaugh, and J. Defects in GaAs,” Phys. Rev. Lett., 71, “Demonstration of npn InAs Bipolar Meyer, “Fermi-Level Pinning by Misfit 1176 (1993). This paper is the seminal Transistors with Inverted Base Dislocations at GaAs Interfaces,” Phys. work on the electronic properties of Doping,” IEEE Electron Device Lett., 17, Rev. Lett., 51, 1783 (1983). This is a As-related defects described in paper 166 (1996). This is the first reported fundamental inter-face physics study #20 below. demonstration of an InAs-based demonstrating a new mechanism bipolar transistor. It is important for Fermi-level pinning at lattice 20. C. Warren, J. M. Woodall, J. L. Freeouf, because it offers the possibility of mismatched interfaces. D. Grischkowsky, D. T. McInturff, M. terahertz frequency performance. R. Melloch, and N. Otsuka, “Arsenic 15. J. C. P. Chang, T. P. Chin, and J. M. Precipitates and the Semi-Insulating 9. S. Tiwari, G. D. Pettit, R. J. Davis, and Woodall, “Incoherent Interface of Properties of GaAs Buffer Layers J. M. Woodall, “High Efficiency and InAs Grown Directly on GaP(100),” Grown by Low Temperature Molecular Low Threshold Current Strained V- Appl. Phys. Lett., 69, 981 (1996). Beam Epitaxy,” Appl. Phys. Lett., 57, Groove Quantum-Wire Lasers,” Appl. This is a seminal paper showing that 1331 (1990). This is the first report Phys. Lett., 64, 3536 (1994). This was good-quality epilayers of InAs can of the properties of As precipitates in the first demonstration of an injection be grown on GaP substrates. This GaAs grown by MBE at low substrate laser with threshold currents well is a revolutionary result, as it was temperatures. Since this publication, below 1 mA, opening the possibility widely believed that high-quality the authors have demonstrated many for realistic optical interconnects for epilayers of materials with a large important applications including high-density integrated electronic lattice constant mismatch relative to launching a company that has circuits. the substrate could not be successfully commercialized a state-of-the-art grown. (InAs/GaP has an 11% lattice high-speed photodetector. mismatch.)

The Electrochemical Society Interface • Spring 2009 43