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8K X 8 EPROM Features Powers Down Into a Low-Power Standby Mode 1CY 27C6 4 fax id: 3006 CY27C64 8K x 8 EPROM Features powers down into a low-power standby mode. It is packaged in a 600-mil-wide package. The reprogrammable packages • CMOS for optimum speed/power are equipped with an erasure window; when exposed to UV • Windowed for reprogrammability light, these EPROMs are erased and can then be repro- • High speed grammed. The memory cells utilize proven EPROM float- ing-gate technology and byte-wide intelligent programming al- — 0 ns (commercial) gorithms. • Low power The EPROM cell requires only 12.5V for the super voltage and — 40 mW (commercial) low–current requirements allow for gang programming. The — 30 mW (military) EPROM cells allow for each memory location to be tested 100%, as each location is written into, erased, and repeatedly • Super low standby power exercised prior to encapsulation. Each EPROM is also tested — Less than 85 mW when deselected for AC performance to guarantee that after customer program- • EPROM technology 100% programmable ming, the product will meet DC and AC specification limits. ± • 5V 10% VCC, commercial and military Reading is accomplished by placing an active LOW signal on • TTL-compatible I/O OE and CE. The contents of the memory location addressed by the address lines (A0 through A12) will become available on the output Functional Description lines (O0 through O7). The CY27C64 is a high-performance 8192 word by 8 bit CMOS PROM. When deselected, the CY27C64 automatically Logic Block Diagram Pin Configurations O7 DIP/CerDIP A0 Top View A1 VCC 1 28 VCC 2 27 A2 64K O6 A12 VCC ROW PROGRAMMABLE A7 3 26 NC A ADDRESS MULTIPLEXER 3 ARRAY A 4 6 25 A8 A5 5 24 A9 A4 A 6 4 23 A11 O5 A5 A3 7 22 OE A2 8 21 A10 A6 A1 9 27C64 20 CE ADDRESS A A7 O 0 10 19 O7 DECODER 4 O0 11 18 O6 A8 O1 12 17 O5 O 13 16 O A9 2 4 GND 14 15 O3 O A10 COLUMN 3 ADDRESS [1] 27C64-2 A11 PLCC Top View A 12 O2 4 POWER DOWN 32132 31 30 A A 6 5 29 8 A 5 6 28 A9 O1 A 4 7 27 A11 A 3 8 26 NC A 2 9 25 OE A A 1 10 24 10 A0 23 CE O0 11 27C64 NC 12 22 O7 O0 13 21 O6 14 15 16 17 18 19 20 CE OE 27C64-1 27C64-3 Notes: 1. Pins 1 and 17 are common and tied to the die attach pad. They should not be used. Cypress Semiconductor Corporation • 3901 North First Street • San Jose • CA 95134 • 408-943-2600 April 1995 CY27C64 Selection Guide 27C64-70 27C64-90 27C64-120 27C64-150 27C64-200 Maximum Access Time (ns) 70 90 120 150 200 Maximum Operating Commercial 80 80 80 80 80 Current (mA) Military 100 100 100 100 100 Maximum Standby Commercial 15 15 15 15 15 Current (mA) Military 15 15 15 15 15 Maximum Ratings (Above which the useful life may be impaired. For user guide- Static Discharge Voltage .......................................... > 2001V lines, not tested.) (per MIL–STD–883, Method 3015) Storage Temperature ................................. –65°C to +150°C Latch–Up Current ................................................... > 200 mA Ambient Temperature with UV Exposure ................................................ 7258 Wsec/cm2 Power Applied............................................. –55°C to +125°C Supply Voltage to Ground Potential Operating Range (DIP Pin 28 to Pin 14) .................................... –0.5V to +7.0V Ambient DC Voltage Applied to Outputs Range Temperature VCC in High Z State ............................................... –0.5V to +7.0V Commercial 0°C to +70°C 5V ± 10% DC Input Voltage............................................ –3.0V to +7.0V Industrial[2] –40°C to +85°C 5V ± 10% DC Program Voltage.....................................................13.0V Military[3] –55°C to +125°C 5V ± 10% Electrical Characteristics Over the Operating Range[4,5] Parameter Description Test Conditions Min. Max. Unit VOH Output HIGH Voltage VCC = Min., IOH = –4.0 mA 2.4 V VOL Output LOW Voltage VCC = Min., IOL = 16.0 mA 0.4 V VIH Input HIGH Voltage 2.0 V VIL Input LOW Voltage 0.8 V µ IIX Input Current GND < VIN < VCC –10 +10 A VCD Input Diode Clamp Voltage Note 5 µ IOZ Output Leakage Current GND < VOUT < VCC,Output Disabled –10 +10 A [6] IOS Output Short Circuit Current VCC = Max., VOUT = GND –20 –90 mA ICC Power Supply Current VCC = Max., VIN = 2.0V, Com’l 80 mA I = 0 mA OUT Mil 100 f=10 MHz ISB Standby Supply Current Chip Enable Inactive, Com’l 15 mA CE = V , I = 0 mA IH OUT Mil 15 Capacitance[5] Parameter Description Test Conditions Max. Unit ° CIN Input Capacitance TA = 25 C, f = 1 MHz, 10 pF VCC = 5.0V COUT Output Capacitance 10 pF Notes: 2. Contact a Cypress representative regarding industrial temperature range specification. 3. TA is the “instant on” case temperature. 4. See the last page of this specification for Group A subgroup testing information. 5. See the “Introduction to CMOS NVMs” section of the Cypress Data Book for general information on testing. 6. For test purposes, not more than one output at a time should be shorted. Short circuit test duration should not exceed 30 seconds. 2 CY27C64 AC Test Loads and Waveforms Test Load R1 250Ω R1 250Ω 5V 5V OUTPUT OUTPUT 30 pF R2 167Ω 5pF R2 167Ω INCLUDING INCLUDING JIG AND JIG AND SCOPE SCOPE (a) NormalLoad (b) HighZ Load 27C64-4 Equivalent to: THÉVENIN EQUIVALENT RTH 100Ω OUTPUT 2.0V Switching Characteristics Over the Operating Range[2,3,5] 27C64-70 27C64-90 27C64-120 27C64-150 27C64-200 Parameter Description Min. Max Min. Max Min. Max Min. Max Min. Max Unit tAA Address to Output Valid 70 90 120 150 200 ns tHZCE Chip Enable Inactive to High Z 45 45 45 45 45 ns tHZOE Output Enable Inactive to High Z 25 25 30 30 30 ns tOE Output Enable Active to Output 40 40 50 50 50 ns Valid tCE Chip Enable Active to Output Valid 70 90 120 150 200 ns tOH Data Hold from Address Change 3 3 3 3 3 ns tPU Chip Enable Active to Power-Up 70 90 120 150 200 ns tPD Chip Enable Inactive to 70 90 120 150 200 ns Power-Down 3 CY27C64 Erasure Characteristics EPROM is exposed to high-intensity UV light for an extended period of time. Wavelengths of light less than 4000 angstroms begin to erase 7258 Wsec/cm2 is the recommended maximum dosage. the devices in the windowed package. For this reason, an opaque label should be placed over the window if the EPROM Programming Modes is exposed to sunlight or fluorescent lighting for extended pe- riods of time. Programming support is available from Cypress as well as The recommended dose of ultraviolet light for erasure is a from a number of third party software vendors. For detailed wavelength of 2537 angstroms for a minimum dose (UV inten- programming information, including a listing of software pack- sity multiplied by exposure time) of 25 Wsec/cm2. For an ultra- ages, please see the PROM Programming Information located violet lamp with a 12 mW/cm2 power rating, the exposure time would at the end of this section. Programming algorithms can be ob- be approximately 35 minutes. The CY27C64 needs to be within 1 tained from any Cypress representative. When programming, inch of the lamp during erasure. Permanent damage may result if the select the Cypress CY7C266 algorithm. Table 1. Mode Selection. Pin Function[7, 8] − Normal Operation A8 A9 A10 A11 A12 CE OE D7 D0 − Mode Program VFY PGM LAT NA NA CE VPP D7 D0 Read A8 A9 A10 A11 A 12 VIL VIL O7 – O0 Standby X X X X X VIH X Three-Stated Output Disable A8 A9 A10 A11 A 12 VIL VIH Three-Stated Program VIHP VILP VILP VILP VILP VILP VPP D7 – D0 Program Verify VILP VIHP VILP VILP VILP VILP VPP O7 – O0 Program Inhibit VIHP VIHP VILP VILP VILP VILP VPP Three-Stated Blank Check VILP VIHP VILP VILP VILP VILP VPP O7 – O0 Notes: 7. X = “don’t care” but must not exceed VCC + 5%. − − 8. Address A8 A12 must be latched through lines A0 A4 in Programming modes. Figure 1. Programming Pinout DIP/CerDIP Top View PLCC Top View NC 1 28 VPP NA 2 27 NC A7 3 26 NC 4 32132 31 30 A VFY A6 4 25 VFY 6 5 29 A5 6 28 PGM A5 5 24 PGM A /A 27C64 4 12 7 27 NA A4/A12 6 27C64 23 NA A /A 3 11 8 26 NC A /A 22 A /A 3 11 7 VPP 2 1 9 25 VPP A /A A2/A10 8 21 LAT 1 90 10 24 LAT A0/A8 A1/A9 9 20 CE 11 23 CE NC 12 22 D7 A0/A8 10 19 D7 D 13 21 D6 11 0 D0 18 D6 14 15 16 17 18 19 20 D1 12 17 D5 D2 13 16 D4 VSS 14 15 D3 27C64-6 27C64-5 4 CY27C64 Typical DC and AC Characteristics NORMALIZED SUPPLY CURRENT NORMALIZEDSUPPLY CURRENT NORMALIZED ACCESS TIME vs. SUPPLY VOLTAGE vs. AMBIENT TEMPERATURE vs. SUPPLY VOLTAGE 1.6 1.2 1.2 1.4 1.1 1.0 1.2 1.0 0.8 1.0 0.9 T =25°C 0.6 0.8 A f= fMAX TA =25°C 0.6 0.8 0.4 4.0 4.5 5.0 5.5 6.0 −55 25 125 4.0 4.5 5.0 5.5 6.0 SUPPLY VOLTAGE (V) AMBIENT TEMPERATURE (°C) SUPPLYVOLTAGE (V) NORMALIZED ACCESS TIME OUTPUT SOURCECURRENT TYPICAL ACCESS TIME CHANGE vs.
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