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Thesis Template Robust Subthreshold CMOS Votlage-Controlled Frequency Synthesizer for Wireless Dosimeter Application by Mohammadjavad Sheikhzadeh Nadjar, B. Sc. A thesis submitted to the Faculty of Graduate and Postdoctoral Af- fairs in partial fulfillment of the requirements for the degree of Master of Applied Science in Electrical and Computer Engineering Carleton University Ottawa, Ontario © 2015, Mohammadjavad Sheikhzadeh Nadjar Abstract Detailed study of MOSFET behavior in the subthreshold region of operation is conducted with the 0.13 µm CMOS IBM technology. High sensitivity of subthreshold CMOS cir- cuits to process variations is addressed. Two body-biasing circuits for stabilizing the sub- threshold current of n-channel (NMOS) and p-channel (PMOS) devices are introduced. These stabilization schemes are applied to a voltage-controlled frequency synthesizer (VCFS) operating in the subthreshold region to design a robust, high resolution and ultra- low power (ULP) signal processing unit (SPU). The intended application is a wireless dosimeter, which converts radiation doses in the range of -900 mV to 0 to pulses with varying frequencies. Simulation results show a linear frequency vs. sensitivity response, generating pulses with 50% duty cycle for all inputs. The SPU yields a maximum error of 210 mV or 24% (6 Gy), minimum resolution of 15 KHz/Gy, minimum bandwidth of 805 KHz and maximum power consumption of 1.72 µW. i Acknowledgment I wish to extent my utmost thanks to my thesis supervisors, Professor Langis Roy and Professor Maitham Shams, for their continuous guidance, support and patience. Working with them was a pleasant experience and an invaluable asset for me. I would like to thank Professors Steve McGarry, Garry Tarr and Emad Gad for their careful review and contributions to the thesis. I would like to thank the staff members at the Department of Electronics, espe- cially, Blazenka Power, Anna Lee, Rob Vandusen, Nagui Mikhail and Scott Bruce. I would like to thank my friends Behzad Yadegari, Stephen Toth, Farideh Shirani and Ebrahim Ghazisaeedi for their excellent technical and moral support. I would also like to thank CMC Microsystems and their technology partners for access to the design tools used in the research for this thesis. On a personal note, I wish to sincerely thank my parents, who have always sup- ported me with their unconditional love and compassion, and have taught me faith and patience. ii Dedication This dissertation is dedicated to… my lovely parents, sisters and brother for their unconditional love, patience, and support. iii In the Name of God, the Compassionate, the Merciful iv Table of Contents Abstract ............................................................................................................................... i Acknowledgment ............................................................................................................... ii Table of Contents .............................................................................................................. v List of Figures .................................................................................................................. viii List of Tables ................................................................................................................... xii List of Acronyms ............................................................................................................ xiii Chapter 1. Introduction ................................................................................................... 1 1.1. Motivation ........................................................................................................... 2 1.2. Thesis Objectives ................................................................................................ 3 1.3. Thesis Outline ..................................................................................................... 4 Chapter 2. Review of CMOS Circuit Design in the Subthreshold Region and Wireless Sensor Signal Processing .................................................................................. 5 2.1. MOSFET in the Subthreshold Region ................................................................. 5 2.1.1 MOSFET Current ....................................................................................................... 6 2.1.2 MOSFET Threshold Voltage ..................................................................................... 8 2.1.3 MOSFET Capacitances .............................................................................................. 8 2.1.4 MOSFET Leakage Currents ..................................................................................... 11 2.2. CMOS Subthreshold Circuits: Benefits and Challenges .................................. 12 2.3. Literature Review: CMOS Circuit Design in the Subthreshold Region ........... 14 2.3.1 CMOS Logic Families in the Subthreshold Region ................................................. 14 2.3.2 Increasing the Speed of Subthreshold Circuits ........................................................ 17 2.3.3 Decreasing Sensitivities to PVT Variations for Circuits Operating in the Subthreshold Region ............................................................................................................. 18 2.3.4 Additional Circuit Required for Subthreshold Circuit Design ................................. 20 2.4. Literature Review: Wireless Sensor Signal Processing .................................... 22 2.5. Summary ........................................................................................................... 24 Chapter 3. MOSFET Operation in the Subthreshold Region using the 0.13 µm CMOS Technology .......................................................................................................... 25 v 3.1. MOSFET Threshold Behavior in the Subthreshold Region using 0.13 µm Technology .................................................................................................................... 25 3.1.1 MOSFET Body-Bias Configurations ....................................................................... 25 3.1.2 MOSFET Vth vs. Vbs , Vth vs. Vds Characteristics in the Subthreshold Region ........ 26 3.1.3 MOSFET Vth vs. W, Vth vs. L Characteristics in the Subthreshold Region ............. 29 3.1.4 MOSFET Threshold Sensitivity to Process Variations in the Subthreshold Region 30 3.2. MOSFET Current Behavior in the Subthreshold Region using 0.13 µm Technology .................................................................................................................... 34 3.2.1 MOSFET Ids vs. Vbs , Ids vs. Vgs Characteristics in the Subthreshold Region ........... 34 3.2.2 MOSFET Ids vs. W, Ids vs. L Characteristics in the Subthreshold Region ................ 35 3.2.3 MOSFET Current Sensitivity to Process Variations in the Subthreshold Region ... 36 3.3. Summary ........................................................................................................... 43 Chapter 4. Ultra-Low Power Sensor Signal Processing Unit Design ......................... 44 4.1. System Level Analysis ....................................................................................... 44 4.1.1 Wireless Dosimeter at System Level ....................................................................... 44 4.1.2 Signal Processing Unit Design Specifications ......................................................... 45 4.1.3 Signal Processing Unit at System Level .................................................................. 47 4.2. DC Shifter and Varactor ................................................................................... 48 4.2.1 Theory ...................................................................................................................... 48 4.2.2 Simulations ............................................................................................................... 49 4.3. Subthreshold Schmitt Trigger ........................................................................... 52 4.3.1 Theory ...................................................................................................................... 52 4.3.2 Simulations ............................................................................................................... 56 4.4. Subthreshold Voltage-Controlled Frequency Synthesizer ................................ 62 4.4.1 STRO ....................................................................................................................... 63 4.4.2 VCFS ........................................................................................................................ 64 4.5. Level Shifter and SPU Design........................................................................... 68 4.6. Summary ........................................................................................................... 74 Chapter 5. Implementation and Testing of the Ultra-Low Power Sensor Signal Processing Unit ................................................................................................................ 75 5.1. Ultra-Low Power Sensor Signal Processing Unit Implementation .................. 75 5.1.1 Adding Enable, Pins, ESD protection and RC Clamp to the SPU ........................... 75 5.1.2 SPU Layout .............................................................................................................. 79 5.1.3 SPU Extracted View Simulation Results ................................................................
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