Chapter -1 Logic Families
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Allgemeines Abkürzungsverzeichnis
Allgemeines Abkürzungsverzeichnis L. -
Lecture17 08 04 2010
EE40 Lecture 17 Josh Hug 8/04/2010 EE40 Summer 2010 Hug 1 Logistics • HW8 will be due Friday • Mini-midterm 3 next Wednesday – 80/160 points will be a take-home set of design problems which will utilize techniques we’ve covered in class • Handed out Friday • Due next Wednesday – Other 80/160 will be an in class midterm covering HW7 and HW8 • Final will include Friday and Monday lecture, Midterm won’t – Design problems will provide practice EE40 Summer 2010 Hug 2 Project 2 • Booster lab actually due next week – For Booster lab, ignore circuit simulation, though it may be instructive to try the Falstad simulator • Project 2 due next Wednesday – Presentation details to come [won’t be mandatory, but we will ask everyone about their circuits at some point] EE40 Summer 2010 Hug 3 Project 2 • For those of you who want to demo Project 2, we’ll be doing demos in lab on Wednesday at some point – Will schedule via online survey EE40 Summer 2010 Hug 4 CMOS/NMOS Design Correction • (Sent by email) • My on-the-fly explanation was correct, but not the most efficient way – If your FET circuit is implementing a logic function with a bar over it, i.e. • 푍 = 퐴 + 퐵퐶 + 퐷 + 퐸퐹 퐺 + 퐻 – Then don’t put an inverter at the output, it just makes things harder and less efficient • Sorry, on-the-fly-explanations can be dicey EE40 Summer 2010 Hug 5 CMOS • CMOS Summary: – No need for a pull-up or pull-down resistor • Though you can avoid this even with purely NMOS logic (see HW7) – Greatly reduced static power dissipation vs. -
A Vertical Resonant Tunneling Transistor for Application in Digital Logic Circuits
1028 IEEE TRANSACTIONS ON ELECTRON DEVICES, VOL. 48, NO. 6, JUNE 2001 A Vertical Resonant Tunneling Transistor for Application in Digital Logic Circuits Jürgen Stock, Jörg Malindretos, Klaus Michael Indlekofer, Michael Pöttgens, Arno Förster, and Hans Lüth Abstract—A vertical resonant tunneling transistor (VRTT) has In this paper, we report on the fabrication of a vertical res- been developed, its properties and its application in digital logic onant tunneling transistor (VRTT) with low peak voltage and circuits based on the monostable-bistable transition logic element good peak current control by means of a Schottky gate. The (MOBILE) principle are described. The device consists of a small mesa resonant tunneling diode (RTD) in the GaAs/AlAs material asymmetric behavior of the current-voltage ( ) character- system surrounded by a Schottky gate. We obtain low peak voltages istics is analyzed and the transistors are characterized with re- using InGaAs in the quantum well and the devices show an excel- spect to their peak voltage, peak-to-valley ratio (PVR), peak cur- lent peak current control by means of an applied gate voltage. A rent density, and gate function. We demonstrate the switching self latching inverter circuit has been fabricated using two VRTTs functionality of a self latching inverter circuit consisting of two and the switching functionality was demonstrated at low frequen- cies. VRTTs. Index Terms—Monostable-bistable transition logic element (MOBILE), monostable-to-bistable transition, resonant tunneling II. DEVICE FABRICATION diode (RTD), resonant tunneling transistor. A. Layer Structure The epitaxial structure used to fabricate the VRTT device was I. INTRODUCTION grown by molecular beam epitaxy (MBE) on semi-insulating N recent years, several new memory and logic circuits based (100)-orientated GaAs substrate. -
EE 434 Lecture 2
EE 330 Lecture 6 • PU and PD Networks • Complex Logic Gates • Pass Transistor Logic • Improved Switch-Level Model • Propagation Delay Review from Last Time MOS Transistor Qualitative Discussion of n-channel Operation Source Gate Drain Drain Bulk Gate n-channel MOSFET Source Equivalent Circuit for n-channel MOSFET D D • Source assumed connected to (or close to) ground • VGS=0 denoted as Boolean gate voltage G=0 G = 0 G = 1 • VGS=VDD denoted as Boolean gate voltage G=1 • Boolean G is relative to ground potential S S This is the first model we have for the n-channel MOSFET ! Ideal switch-level model Review from Last Time MOS Transistor Qualitative Discussion of p-channel Operation Source Gate Drain Drain Bulk Gate Source p-channel MOSFET Equivalent Circuit for p-channel MOSFET D D • Source assumed connected to (or close to) positive G = 0 G = 1 VDD • VGS=0 denoted as Boolean gate voltage G=1 • VGS= -VDD denoted as Boolean gate voltage G=0 S S • Boolean G is relative to ground potential This is the first model we have for the p-channel MOSFET ! Review from Last Time Logic Circuits VDD Truth Table A B A B 0 1 1 0 Inverter Review from Last Time Logic Circuits VDD Truth Table A B C 0 0 1 0 1 0 A C 1 0 0 B 1 1 0 NOR Gate Review from Last Time Logic Circuits VDD Truth Table A B C A C 0 0 1 B 0 1 1 1 0 1 1 1 0 NAND Gate Logic Circuits Approach can be extended to arbitrary number of inputs n-input NOR n-input NAND gate gate VDD VDD A1 A1 A2 An A2 F A1 An F A2 A1 A2 An An A1 A 1 A2 F A2 F An An Complete Logic Family Family of n-input NOR gates forms -
SRAM Read/Write Margin Enhancements Using Finfets
IEEE TRANSACTIONS ON VERY LARGE SCALE INTEGRATION (VLSI) SYSTEMS, VOL. 18, NO. 6, JUNE 2010 887 SRAM Read/Write Margin Enhancements Using FinFETs Andrew Carlson, Member, IEEE, Zheng Guo, Student Member, IEEE, Sriram Balasubramanian, Member, IEEE, Radu Zlatanovici, Member, IEEE, Tsu-Jae King Liu, Fellow, IEEE, and Borivoje Nikolic´, Senior Member, IEEE Abstract—Process-induced variations and sub-threshold [1]. Accurate control is essential for high read stability. Sim- leakage in bulk-Si technology limit the scaling of SRAM into ilarly, variability and device leakage affect the writeability of the sub-32 nm nodes. New device architectures are being considered cell. To maintain both desired writeability and read stability of to improve control and reduce short channel effects. Among the SRAM arrays, several radical departures from the conven- the likely candidates, FinFETs are the most attractive option be- cause of their good scalability and possibilities for further SRAM tional design have been considered as follows. performance and yield enhancement through independent gating. 1) Scaling of the traditional six-transistor (6-T) SRAM cell The enhancements to read/write margins and yield are investi- at a slower pace, since a transistor with a larger area is gated in detail for two cell designs employing independently gated more immune to variations. This is a common approach FinFETs. It is shown that FinFET-based 6-T SRAM cells designed in 65- and 45-nm technology nodes; while it still might with pass-gate feedback (PGFB) achieve significant improvements in the cell read stability without area penalty. The write-ability of be applicable to small arrays in future, it fundamentally the cell can be improved through the use of pull-up write gating undermines the objective of technology scaling. -
Diode Logic). • Explain the Need for Introducing Transistors in the Output (DTL and TTL
Lecture 02: Logic Families R.J. Harris & D.G. Bailey Objectives • Show how diodes can be used to form logic gates (Diode logic). • Explain the need for introducing transistors in the output (DTL and TTL). • Explain why Schottky transistors improve the speed of gates. • Describe the operating principles of CMOS logic gates. • Explain the definitions of noise margin, fanout, propagation delay, rise and fall time. Semester 2 - 2006 Digital Electronics Slide 2 Review of Previous Lecture • You can now: – Describe the important differences between analogue and digital signals. – Show how to represent more than two levels using digital signals. – Manipulate different codes for representing numbers and letters: • natural binary, signed binary, twos complement, offset binary, Gray codes, ASCII characters. – Show how to convert between binary and base 10. – Write down the logic symbols for • AND, OR, NOT, NAND and NOR gates. – Draw up a truth table to represent relationships between inputs and outputs of a logic circuit. Semester 2 - 2006 Digital Electronics Slide 3 Presentation Outline • Diode Transistor Logic • TTL • Schottky TTL • CMOS • Tristate logic outputs • Definitions: – Noise margin, fanout – Timing: rise and fall times, propagation delay – Power dissipation • Power supply decoupling Semester 2 - 2006 Digital Electronics Slide 4 Diode Logic – AND Gate • Recall that a diode behaves like a switch. – When the diode is forward biased, the switch is closed, allowing a current to flow through it. When reverse biased, it is like a switch that is turned off - no current flows. • First we shall look at an AND gate. – If either input A or input B goes low, it will forward bias the corresponding diode. -
CSCE 5730 Digital CMOS VLSI Design
Lecture 2: Overview CSCE 5730 Digital CMOS VLSI Design Instructor: Saraju P. Mohanty, Ph. D. NOTE: The figures, text etc included in slides are borrowed from various books, websites, authors pages, and other sources for academic purpose only. The instructor does not claim any originality. CSCE 5730: Digital CMOS VLSI Design 1 Lecture Outline • Historical development of computers • Introduction to a basic digital computer • Five classic components of a computer • Microprocessor • IC design abstraction level • Intel processor family • Developmental trends of ICs • Moore’s Law CSCE 5730: Digital CMOS VLSI Design 2 Introduction to Digital Circuits CSCE 5730: Digital CMOS VLSI Design 3 What is a digital Computer ? A fast electronic machine that accepts digitized input information, processes it according to a list of internally stored instruction, and produces the resulting output information. List of instructions Æ Computer program Internal storage Æ Memory CSCE 5730: Digital CMOS VLSI Design 4 Different Types and Forms of Computer • Personal Computers (Desktop PCs) • Notebook computers (Laptop computers) • Handheld PCs • Pocket PCs • Workstations (SGI, HP, IBM, SUN) • ATM (Embedded systems) • Supercomputers CSCE 5730: Digital CMOS VLSI Design 5 Five classic components of a Computer Computer Processor Memory Devices Control Input Datapath Output (1) Input, (2) Output, (3) Datapath, (4) Controller, and (5) Memory CSCE 5730: Digital CMOS VLSI Design 6 What is a microprocessor ? • A microprocessor is an integrated circuit (IC) built on a tiny piece of silicon. It contains thousands, or even millions, of transistors, which are interconnected via superfine traces of aluminum. The transistors work together to store and manipulate data so that the microprocessor can perform a wide variety of useful functions. -
Design and Implementation of 4 Bit Carry Skip Adder Using Nmos and Pmos Transmission Gate
EasyChair Preprint № 2561 Design and Implementation of 4 Bit Carry Skip Adder Using Nmos and Pmos Transmission Gate Ashutosh Pandey, Harshit Singh, Vivek Kumar Chaubey and Utkarsh Jaiswal EasyChair preprints are intended for rapid dissemination of research results and are integrated with the rest of EasyChair. February 5, 2020 CHAPTER-1 INTRODUCTION In the field of electronics, a digital circuit that performs addition of numbers is called an adder or summer. In various kinds of processors like computers, adders have many applications in the arithmetic logic units, as well as in other parts, where these are used to compute table indices, addresses and similar operations. Mostly, the common adders operate on binary numbers, but they can also be constructed for many other numerical representations, such as excess-3 or binary coded decimal (BCD). It is insignificant to customize the adder into an adder-subtractor unit in situations where negative numbers are represented by one's or two's complement. The usage of power efficient VLSI circuits is required to satiate the perennial need for mobile electronic devices. The calculations in these devices ought to be performed using area efficient and low power circuits working at higher speed. The most elementary arithmetic operation is addition; and the most basic arithmetic component of the processor is the adder. Depending upon the delay, area and power consumption requirements; certain adder implementations such as ripple carry, carry-skip, carry select and carry look ahead are available. When large bit numbers are used, the ripple carry adder (RCA) is not very efficient. With the bit length, there is a linear increase in delay. -
Digital Logic and Design (Course Code: EE222) Ltlecture 6: Lliogic Famili Es
Indian Institute of Technology Jodhpur, Year 2018‐2019 Digital Logic and Design (Course Code: EE222) LtLecture 6: LiLogic Fam ilies Course Instructor: Shree Prakash Tiwari EilEmail: sptiwari@iitj .ac.i n Webpage: http://home.iitj.ac.in/~sptiwari/ Course related documents will be uploaded on http://home.iitj.ac.in/~sptiwari/DLD/ Note: The information provided in the slides are taken form text books Digital Electronics (including Mano & Ciletti), and various other resources from internet, for teaching/academic use only 1 Overview •Early families (DL, RTL) • TTL •Evolution of TTL family • CMOS family and its evolution 2 Logic families Diode Logic (DL) •simpp;lest; does not scale •NOT not possible (need = an active element) Resistor-Transistor Logic (RTL) • replace diode switch with a tittransistor switc h •can be cascaded = • large power draw 3 Logic families Diode-Transistor Logic (DTL) • essentially diode logic with transistor amplification • reduced power consumption •faster than RTL = DL AND gate Saturating inverter 4 Logic Families • The bipolar transistor as a logical switch TTL Bipolar Transistor-Transistor Logic (TTL) •First introduced by in 1964 (Texas Instruments) •TTL has shaped digital technology in many ways • Standard TTL family (e.g. 7400) is obsolete •Newer TTL families used (e.g. 74ALS00) 6 TTL Bipolar Transistor-Transistor Logic (TTL) Distinct features •Multi‐emitter transistors 7 TTL A Standard TTL NAND gate 8 TTL A standard TTL NAND gate with open collector output 9 TTL evolution Schottky series (74LS00) TTL •A major -
High Performance Ripple Carry Adder Using Domino
International Research Journal of Engineering and Technology (IRJET) e-ISSN: 2395 -0056 Volume: 02 Issue: 08 | Nov-2015 www.irjet.net p-ISSN: 2395-0072 HIGH PERFORMANCE RIPPLE CARRY ADDER USING DOMINO LOGIC Dr.J.Karpagam1 , A.Arunadevi2 1 Professor, Department of ECE, KPRIET, Coimbatore, Tamilnadu, India 2 PG Scholar, Department of ECE, KPRIET, Coimbatore, Tamilnadu, India ---------------------------------------------------------------------***--------------------------------------------------------------------- ABSTRACT excessively with a mixer of dynamic and static circuit styles, use of dual supply voltages and dual threshold The demand and popularity of portable electronics is voltages. driving designers to strive for small silicon area, higher speeds, low power dissipation and reliability. Domino logic Domino logic is a clocked logic family which means that circuits are important as it provides better speed and has every single logic gate has a clock signal present. When the lesser transistor requirement when compared to static clock signal turns low, node N0 goes high, causing the CMOS logic circuits. This project presents the design and output of the gate to go low. This represents the only performance of 8-bit Ripple Carry Adder using CMOS mechanism for the gate output to go low once it has been Domino logic targeting at full-custom high speed driven high. The operating period of the cell when its input applications. The constant delay characteristic of this logic clock and output are low is called the recharge phase or style regardless of the logic expression makes it suitable for cycle. The next phase, when the clock is high, is called the implementing complicated logic expression such as addition. evaluate phase or cycle. -
Logic Families – Characteristics and Types Table of Content
1 Module-1: Logic Families – Characteristics and Types Table of Content 1.1 Introduction 1.2 Logic families 1.3 Positive and Negative logic 1.4 Types of logic families 1.5 Characteristics of logic families 1.6 Evolution of logic families 1.7 Classification of logic families 1.8 Summary Learning Outcome: After completing this module, you will be able to 1. Understand need of logic digital ICs 2. Understand significance of logic families 3. Understand characteristics of logic families 4. Identify different types of logic families 5. Know about evolution of different logic families Digital Electronics Electronic Science 1. Logic families 2 1.1 Introduction The first logic circuit was developed using discrete circuit components. Using advance techniques, these complex circuits can be miniaturized and produced on a small piece of semiconductor material like silicon. Such a circuit is called integrated circuit (IC). Now-a-days, all the digital circuits are available in IC form. While producing digital ICs, different circuit configurations and manufacturing technologies are used. This results into a specific logic family. Each logic family designed in this way has identical electrical characteristics such as supply voltage range, speed of operation, power dissipation, noise margin etc. In this module, we discuss significance and types of logic families. The positive and negative logic and its significance are also discussed. In addition to this, different characteristics which are the key parameters in deciding the logic family for any circuit design are discussed in detail. The module is concluded with explanation of the brief history of the logic family in terms of discrete logic circuits. -
Advanced MOSFET Designs and Implications for SRAM Scaling
Advanced MOSFET Designs and Implications for SRAM Scaling By Changhwan Shin A dissertation submitted in partial satisfaction of the requirements for the degree of Doctor of Philosophy in Engineering - Electrical Engineering and Computer Sciences in the Graduate Division of the University of California, Berkeley Committee in charge: Professor Tsu-Jae King Liu, Chair Professor Borivoje Nikolić Professor Eugene E. Haller Spring 2011 Advanced MOSFET Designs and Implications for SRAM Scaling Copyright © 2011 by Changhwan Shin Abstract Advanced MOSFET Designs and Implications for SRAM Scaling by Changhwan Shin Doctor of Philosophy in Engineering – Electrical Engineering and Computer Sciences University of California, Berkeley Professor Tsu-Jae King Liu, Chair Continued planar bulk MOSFET scaling is becoming increasingly difficult due to increased random variation in transistor performance with decreasing gate length, and thereby scaling of SRAM using minimum-size transistors is further challenging. This dissertation will discuss various advanced MOSFET designs and their benefits for extending density and voltage scaling of static memory (SRAM) arrays. Using three- dimensional (3-D) process and design simulations, transistor designs are optimized. Then, using an analytical compact model calibrated to the simulated transistor current-vs.-voltage characteristics, the performance and yield of six-transistor (6-T) SRAM cells are estimated. For a given cell area, fully depleted silicon-on-insulator (FD-SOI) MOSFET technology is projected to provide for significantly improved yield across a wide range of operating voltages, as compared with conventional planar bulk CMOS technology. Quasi-Planar (QP) bulk silicon MOSFETs are a lower-cost alternative and also can provide for improved SRAM yield. A more printable "notchless" QP bulk SRAM cell layout is proposed to reduce lithographic variations, and is projected to achieve six-sigma yield (required for terabit-scale SRAM arrays) with a minimum operating voltage below 1 Volt.