Chapter 1 Power Electronic Devices

c (Part I)

i Chapter 1

E Power Electronic Devices

P Power Electronics Outline Outline 1.8 Seriesand parallelconnections ofpowerelectronic 1.7 Protection ofpowerelectronic devices 1.6 Drivecircuit forpowerelectronic devices 1.5 Othernewpowerelectronic devices 1.4 Typicalfully 1.3 Half 1.2 Uncontrolleddevice 1.1 Anintroductoryoverview ofpowerelectronicdevices 1.8 Seriesand parallelconnections ofpowerelectronic 1.7 Protection ofpowerelectronic devices 1.6 Drivecircuit forpowerelectronic devices 1.5 Othernewpowerelectronic devices 1.4 Typicalfully 1.3 Half 1.2 Uncontrolleddevice 1.1 Anintroductoryoverview ofpowerelectronicdevices devices devices - - controlled device controlled device - - controlled devices controlled devices — — — — power diode power diode thyristor thyristor 2 Power Electronics 1.1 1.1 Classifications The conceptandfeatures Major topics Configuration ofsystems usi Classifications Configuration ofsystems usi The conceptandfeatures Major topics electronic devices An introductoryoverviewofpower electronic devices An introductoryoverviewofpower ng powerelectronicdevices ng powerelectronicdevices 3 Power Electronics The conceptofpower electronicdevices The conceptofpower electronicdevices —— In broadsense Power electronicdevices: Very often: —— In broadsense Power electronicdevices: Very often: processing circuitstoconvert or controlelectricpower. power electronicdevices are theelectronicdevicesthat canbedirectlyusedinthepowe processing circuitstoconvert or controlelectricpower. power electronicdevices are theelectronicdevicesthat canbedirectlyusedinthepowe Major materialused inpower semiconductor devices Major materialused inpower semiconductor devices Silicon Silicon Power electronic devices=Powersemiconductor devices Power electronic devices=Powersemiconductor devices

major powerelectronic devices Semiconductor devices: in usetoday rectifier Vacuum devices:Mercuryarc major powerelectronic devices Semiconductor devices: in usetoday rectifier Vacuum devices:Mercuryarc thyratron thyratron , etc..seldom , etc..seldom r r 4 Power Electronics Features ofpower electronicdevices Features ofpower electronicdevices losses Usually workinginswitching statestoreducepower information electronic device does. deals withisusuallymuch largerthanthatthe The electricpowerthat powerelectronicdevice losses Usually workinginswitching statestoreducepower information electronic device does. deals withisusuallymuch largerthanthatthe The electricpowerthat powerelectronicdevice Off-state Current through the device is0 through thedevice Current Off-state On-state Voltage across the device is0 Voltageacrossthedevice On-state v=0 i=0 p=vi=0 p=vi=0 5 Power Electronics Features ofpower electronicdevices Features ofpower electronicdevices are necessary. electronic devices Dissipated powerloss usuallylargerthaninformation between informationcircuits andpowercircuits. Very often,drivecircuits arenecessarytointerface Need tobecontrolled byinformationelectroniccircuits. are necessary. electronic devices Dissipated powerloss usuallylargerthaninformation between informationcircuits andpowercircuits. Very often,drivecircuits arenecessarytointerface Need tobecontrolled byinformationelectroniccircuits. — — special packagingand heatsink special packagingand heatsink 6 Power Electronics power semiconductor power semiconductor devices Power lossesonpowersemiconductor devices Power lossesonpowersemiconductor Total power loss on Total powerloss Total power loss on Total powerloss p i v (conduction state = conductionloss +turn = conductionloss +turn sate -sta n O (on (on - - state loss) state loss) ) turning- off (blocking state) - - Off-state off loss+ off loss+ Switching loss Switching Switching loss Switching ur ng in rn tu -on - - state loss+turn state loss+turn t t t - - on loss on loss 7 Power Electronics electronic devices Configuration ofsystemsusingpower electronic devices Configuration ofsystemsusingpower

system especially fortheex system especially

Protection circuitisalso veryoften usedinpower electronic system: Power electronic Control circuit(inabroadsense) Control circuit Control detection circuit circuit drive pensive powersemiconductors. (power stage, Power circuit main circuit) Electric isolation: optical, magnetic 8 Power Electronics Terminals ofapower electronicdevice control terminaland afixedpower control terminaland afixedpower Terminals ofapower electronicdevice states ofthedevice. to controlthe —control terminal a thirdterminal— device usuallyhas A powerelectronic Control signalfromdrive circui Control signalfromdrive circui called common terminal ). called common terminal ). Circuit Drive G E C t must be connected betweenthe t must be connected betweenthe circuit terminal (therefore circuit terminal (therefore circuit currentflowthrough. terminals toallowpower must haveatleasttwo A powerelectronicdevice 9 Power Electronics A classificationof powerelectronicdevices A classificationof powerelectronicdevices The on and offstatesof thedeviceare controlledby controlsignals. is turned-onby acontrolsignalandturned-off bythepowercircuit circuit. The onandoffstatesofthedevice aredeterminedbythepower has onlytwoterminalsandcan notbecontrolledbycontrolsignal. Fully (Uncontrollable device) diode Uncontrolled device: Half (Half Fully (Uncontrollable device) diode Uncontrolled device: Half (Half (Fully (Fully - - controlled device: - - controlled device: - - controllable device) controlled device: PowerMOSFET,IGBT,GTO, IGCT controllable device) controlled device: PowerMOSFET,IGBT,GTO, IGCT - - controllable device) controllable device) thyristor thyristor 10 Power Electronics Other classifications power electronicdevices power electronicdevices power electronic devices power electronicdevices power electronicdevices power electronic devices Other classifications (Field Voltage Composite devices Bipolar devices (Minoritycarrierdevices) Unipolar Level Pulse Current (Field Voltage Composite devices Bipolar devices (Minoritycarrierdevices) Unipolar Level Pulse Current ------sensitive (level sensitive (level controlled devices) triggered devices controlled devices) triggered devices - - - - driven (current driven (current driven (voltage driven (voltage devices (Majority carrierdevices) devices (Majority carrierdevices) - - triggered) devices triggered) devices - - - - controlled) devices controlled) devices controlled) devices controlled) devices 11 Power Electronics Major topicsforeach device Major topicsforeach device Specification Characteristics Physics ofoperation Appearance, structure, andsymbol Devices of the samefamily Special issues Specification Characteristics Physics ofoperation Appearance, structure, andsymbol Devices of the samefamily Special issues Switching characteristics Static characteristics Switching characteristics Static characteristics 12 Power Electronics circuit Passive componentsinpowerelectronic circuit Passive componentsinpowerelectronic ordinary circuits. electronic circuitscouldbe verydifferentfromthoseby The requirementsforthese pa Transformer, inductor,capacitor andresistor: their characteristicsareus circuit sincetheycannotbe controlledbycontrolsignaland ordinary circuits. electronic circuitscouldbe verydifferentfromthoseby The requirementsforthese pa Transformer, inductor,capacitor andresistor: their characteristicsareus circuit sincetheycannotbe controlledbycontrolsignaland these are passive component these arepassive these are passive component these arepassive ually constantandlinear. ually constantandlinear. ssive componentsbypower ssive componentsbypower s inapowerelectronic s inapowerelectronic 13 Power Electronics 1.2 Uncontrolled devicePowerdiode 1.2 Uncontrolled devicePowerdiode nd Cathode Anode Structure Structure Appearance Appearance Anode Symbol Symbol A A K K Cathode 14 Power Electronics PN junction PN junction Equilibrium ofdiffusion and drift PN junction Doping, p Pure semiconductor (intrinsic semiconductor) Electrons andholes. Semiconductor (ColumnIVelement, Equilibrium ofdiffusion and drift PN junction Doping, p Pure semiconductor (intrinsic semiconductor) Electrons andholes. Semiconductor (ColumnIVelement, - - type semiconductor. N type semiconductor. N 。。。。。 - - - - - einnregion p region 。。。。。 - - - - - 。。。。。 - - - - - inner electric field (depletion region, Direction of potential barrier potential Space charge charge Space - - - - - region) region + + + + + - - type semiconductor type semiconductor · · · · · + + + + + Si Si · · · · · ) ) + + + + + · · · · · + + + + + 15 Power Electronics forward direction PN junctionwithvoltageappliedin the forward direction PN junctionwithvoltageappliedin the p - - - - - + Wo V W + + + + + - n 16 Power Electronics direction PN junctionwithvoltageappliedin the reverse direction PN junctionwithvoltageappliedin the reverse p Effective direction - - - of electronic field ------Wo W V + + + + + + + + + n 17 Power Electronics Construction ofa practical powerdiode Construction ofa practical powerdiode – – – Features different fromlow – – – – Features different fromlow – Conductivity modulation n driftregion (p-i-ndiode) Vertically orientedstructure Larger size - V - + n substrate epi n + - p Cathode Anode + N N i a =10 cm - - power (informationelectronic) diodes power power (informationelectronic) diodes power N N N d d 19 =10 cm =10 cm 19 14 -3 -3 -3 voltage dependent Breakdown 10 250 μ μ m m 18 Power Electronics Forward Forward - - biased powerdiode biased powerdiode 19 Power Electronics Reverse Reverse Breakdown Breakdown – – – – Avalanche breakdown Thermal breakdown - - biased powerdiode biased powerdiode 20 Power Electronics Junction capacitor Junction capacitor power diode. Junction capacitor influencesthe Junction capacitorC — variable withthechanging of externalvoltage. chargein the depletionregionis The positiveandnegative power diode. Junction capacitor influencesthe Junction capacitorC — variable withthechanging of externalvoltage. chargein the depletionregionis The positiveandnegative – – Junction capacitor C Junction capacitor Junction capacitor C Junction capacitor J J J J . . Diffusion capacitor Potential barriercapacitor Diffusion capacitor Potential barriercapacitor switching characteristics of switching characteristics of C C D D C C B B 21 Power Electronics Static characteristics ofpowerdiode Static characteristics ofpowerdiode The I The I - - V characteristic ofpower diode V characteristic ofpower diode I F I O U TO U F U 22 Power Electronics diode Switching (dynamic)characteristics ofpower diode Switching (dynamic) characteristicsofpower Turn Turn Reverse reverse-recovery peak current Reverse-recovery time, reverse-recovery charge, Reverse - - off transient off transient U I - - F recovery process: F recovery process: t F d d t i t 0 F t d I t RP rr t d 1 d i U . t R t f RP t 2 U R t 23 Power Electronics diode Switching (dynamic)characteristics diode Switching (dynamic)characteristics Turn Turn Forward recoveryprocess: Forward recoveryprocess: forward-recovery time - - on transient on transient U 2V FP u i 0 u t fr F i F t of power of power 24 Power Electronics Specifications ofpower diode Specifications ofpower diode Peak repetitivereverse voltageU Forward voltageU Average rectifiedforward currentI Reverse Maximum junction temperatureT Peak repetitivereverse voltageU Forward voltageU Average rectifiedforward currentI Reverse Maximum junction temperatureT - - recovery time recovery time F F t t rr rr JM JM RRM RRM F(AV) F(AV) 25 Power Electronics Types ofpowerdiodes Types ofpowerdiodes Restricted tolowvoltage(less than200V) – Essentially no recoveredcharge,andlower forwardvoltage. – A majoritycarrier device – Fast recoverydiode General purposediode (rectifierdiode): Schottky standard recovery Fast recoverydiode General purposediode (rectifierdiode): Schottky recovery diode. less than1 Reverse recoverytimeand chargespecified.t μ diode ( diode ( ,frmn esta 0 s— ultra-fast s, for many lessthan 100ns—— Schottky Schottky barrier diode barrier diode - - rr SBD) SBD) is usually 26 Power Electronics Examples ofcommercial powerdiodes Examples ofcommercial powerdiodes 27 Power Electronics History andapplications ofpowerdiode History andapplications ofpowerdiode purpose diodes. devices asnecessary components schottky In manycircumstances fastrecoverydiodesor Still in Applied inindustriesstarting 1950s purpose diodes. devices asnecessary components schottky In manycircumstances fastrecoverydiodesor Still in Applied inindustriesstarting 1950s - - use today.Usually workingwithcontrolled use today.Usually workingwithcontrolled diodes have tobeusedinsteadof general diodes have tobeusedinsteadof general 28 Power Electronics 1.3 Half 1.3 Half History History Thyristor Another name:SCR highest power Still inuse in highpowersituation. Thyristor Another name:SCR highest power Still inuse in highpowersituation. – – – – – – – – 1956, invention,BellLaboratories 1957, developmentofthe1st product,GE 1958, 1st commercialized product,GE 1958, 1stcommercialized Thyristor processing area. 1956, invention,BellLaboratories 1957, developmentofthe1st product,GE 1958, 1st commercialized product,GE 1958, 1stcommercialized Thyristor processing area. - - Opened thepowerelectronics era Opened thepowerelectronics era controlled device controlled device replaced vacuum devicesinalmostevery power replaced vacuum devicesinalmostevery power - - handling capability. handling capability. — — silicon controlledrectifier silicon controlledrectifier — — Thyristor Thyristor Thyristor Thyristor till hasthe till hasthe 29 Power Electronics Appearance andsymbol of Appearance andsymbol of Appearance Appearance Cathode Cathode Gate Gate Anode Anode thyristor thyristor Symbol Symbol K A G 30 Power Electronics Structure andequivalent circuitof Structure andequivalent circuitof • • Structure Structure • • Equivalent circuit Equivalent circuit thyristor thyristor 31 Power Electronics Physics of Physics of thyristor thyristor operation operation Equivalent circuit:A Half signal Can notbeturned offby control Trigger feedback Positive transistor andan interconnected together Equivalent circuit:A Half signal Can notbeturned offby control Trigger feedback Positive transistor andan interconnected together - - controllable controllable npn npn pnp pnp transistor transistor 32 Power Electronics Quantitative description of Quantitative description of When I When I When I When I I I I I I I I I I A A K c2 c1 A K c2 c1 ======G G G G

I I

I I α α α α >0, =0, α >0, =0, A c A c 1 1 2 1 2 1 + 2 + + + I I I I I I I G I 1 I α α α α K A G K A G c c − 1 1 1 1 + 2 2 +α +α +α +α + +

+ +

( α I CBO1 I I I I 2 2 2 2 1 CBO2 CBO1 CBO2 CBO1

is small. will approach 1,I is small. will approach 1,I + α +

2 I ) CBO2

A A （（（（（（（（（ will beverylarge. （ will beverylarge. thyristor thyristor 1 1 1 1 1 1 1 1 1 1 ------2 1 2 1 5 4 5 3 4 3 ）））））））））） operation operation 33 Power Electronics Other methodsto trigger Other methodsto trigger High junctiontemperature High risingrateofanode avalanche breakdown High voltageacrossanode andcathode Light activation High junctiontemperature High risingrateofanode avalanche breakdown High voltageacrossanode andcathode Light activation voltagte voltagte thyristor thyristor — — du/dt du/dt — — on on too high too high 34 Power Electronics Static characteristics of Static characteristics of U RSM breakdown avalanche breakdown avalanche U RRM blocking reverse blocking reverse I I O A H conducting forward blocking forward conducting forward blocking forward I G2 increasing I U I G1 DRM U G DSM I G U thyristor thyristor = bo 0 U Ak power circuit with the effectofexternal current tobenear zero Turning off:decreasing applied current isnolonger even whenthe gate latched onconducting Once triggeredon,willbe applied tothegate is triggeringcurrent forward biasedandthere Conducting onlywhen is gatecurrentapplied biased, nomatterifthere Blocking whenreverse Gate I power circuit with the effectofexternal current tobenear zero Turning off:decreasing applied current isnolonger even whenthe gate latched onconducting Once triggeredon,willbe applied tothegate is triggeringcurrent forward biasedandthere Conducting onlywhen is gatecurrentapplied biased, nomatterifthere Blocking whenreverse Gate I - - V characteristics V characteristics 35 Power Electronics 100% 10% 90% Switching characteristics of u Switching characteristics of AK O i 0 A t d t r t rr I RM U RRM t gr thyristor thyristor t t Turn Turn Turn Turn – – – – – – – – – – – – Turn time Forward recovery time Reverse recovery Turn Rise time Delay timet Turn time Forward recovery time Reverse recovery Turn Rise time Delay timet - - - - off transient on transient off transient on transient - - - - t t t t off time on time off time on time gr rr gr rr t t r r d d t t t t q gt q gt 36 Power Electronics Specifications of Specifications of Latching upcurrentI Holding currentI Average on Peak on Peak repetitivereverse blockingvoltageU Peak repetitiveforward blockingvoltageU di/dt du/dt Peak forward surgecurrentI Latching upcurrentI Holding currentI Average on Peak on Peak repetitivereverse blockingvoltageU Peak repetitiveforward blockingvoltageU di/dt du/dt Peak forward surgecurrentI - - state voltageU state voltageU - - state currentI state currentI H H thyristor thyristor L L TM TM T(AV) T(AV) TSM TSM RRM DRM RRM DRM 37 Power Electronics The familyof The familyof Reverse Reverse Triode ACswitch Fast switching (Bi Triode ACswitch Fast switching (Bi — — RCT RCT - - G directional triode directional triode A K - - conducting conducting G thyristor thyristor thyristors thyristors — — G TRIAC TRIAC

A T T K thyristor thyristor thyristor thyristor 2 1 — — FST FST ) ) Light Light — — LTT LTT - - triggered ( triggered ( G I O K A activited activited I G ) ) = 0 U thyristor thyristor 38 Power Electronics 1.4 Typicalfully Applications 1.4.1 Gate 1.4.2 Gianttransistor 1.4.3 Power metal 1.4.3 Power 1.4.4 Insulated 1.4.1 Gate 1.4.2 Gianttransistor 1.4.3 Power metal 1.4.3 Power 1.4.4 Insulated Applications 1.4 Typicalfully Features Features – – – – – – – – transistor transistor semiconductor devices nowadays. IC fabrication technology,fully GTR isobsolete andGTOisalsoseldom usedtoday. IGBT and powerMOSFET arethe twomajorpower Begin tobeused inlargeamount1980s semiconductor devices nowadays. IC fabrication technology,fully GTR isobsolete andGTOisalsoseldom usedtoday. IGBT and powerMOSFET arethe twomajorpower Begin tobeused inlargeamount1980s - - turn turn - - - - gate bipolartransistor gate bipolartransistor off off — — - - oxide Power MOSFET thyristor oxide Power MOSFET thyristor — — GTR GTR - - semiconductor fieldeffect semiconductor semiconductor fieldeffect semiconductor - - — — controlled devices controlled devices GTO GTO - - controllable, high frequency controllable, high frequency — — IGBT IGBT 39 Power Electronics 1.4.1 Gate 1.4.1 Gate Major difference fromconventional The gate andcathode structuresare highly Major difference fromconventional The gate andcathode structuresare highly various typesofgeometric form gates and cathodes. various typesofgeometric form gates and cathodes. a) Structure Structure - - turn turn G N 2 K - - off off N A P b) P 1 1 2 GG N 2 K thyristor thyristor s being usedtolayout the s being usedtolayout the thyristor thyristor — — : : interdigitated interdigitated G Symbol Symbol GTO GTO A K , with , with 40 Power Electronics Physics ofGTOoperation Physics ofGTOoperation G S E I I G G A V 1 A NPN I c1 PNP K V 2 I I c2 K R E A thyristor same asthatoftheconventional The basicoperationofGTO isthe achieve gate turn achieve modifications inthestructure to differenceslie inthe The principal thyristor same asthatoftheconventional The basicoperationofGTO isthe achieve gate turn achieve modifications inthestructure to differenceslie inthe The principal – – – – – – drive currentout ofgate. cathode makes itpossibleto Short distance from gateto the criticalvalue 1. Large drive currentout ofgate. cathode makes itpossibleto Short distance from gateto the criticalvalue 1. Large α α 1 1 + + α α . . 2 2 α α is justalittlelarger than is justalittlelarger than 2 2 - - off capability. off capability. 41 Power Electronics Characteristics of GTO Characteristics of GTO Switching characteristic Static characteristic Switching characteristic Static characteristic – – – – 10% 90% Rather lowreversebreakdown voltage(20 Identical toconventional Rather lowreversebreakdown voltage(20 Identical toconventional I i i I I O 0 A G A A A t 0 t d t 1 t r t 2 thyristor thyristor t 3 in theforwarddirection t in theforwarddirection s t 4 t f t 5 - - 30V) 30V) t t t 6 t t 42 Power Electronics Specifications ofGTO Specifications ofGTO Specifications different from as thoseofconventional Most GTOspecifications havethesamemeanings Specifications different from as thoseofconventional Most GTOspecifications havethesamemeanings – – – – – – – – Turn Turn Current turn Maximum controllableanode currentI Turn Turn Current turn Maximum controllableanode currentI - - - - off time on timet off time on timet - - off gain off gain t t

off on off on

β β off off thyristor thyristor thyristor thyristor . . ATO ATO ’ ’ s s 43 Power Electronics 1.4.2 GiantTransistor 1.4.2 GiantTransistor high voltageandlargecurrent. GTR isactuallythebipolar j So GTRisalsocalledpower BJT,orjustBJT. high voltageandlargecurrent. So GTRisalsocalledpower BJT,orjustBJT. GTR isactuallythebipolar j Basic structure Basic structure unction transistorthatcan handle unction transistorthatcan handle — — GTR GTR b Symbol Symbol c e 44 Power Electronics information Structures ofGTRdifferentfromits information Structures ofGTRdifferentfromits Multiple Multiple - - - - emitter structure emitter structure processing counterpart processing counterpart Darlington configuration Darlington configuration 45 Power Electronics Physics ofGTRoperation Physics ofGTRoperation Same asinformationBJT device Same asinformationBJT device E holes b i b electrons i c i e =

=(1+ β i

b β ) i b E c 46 Power Electronics Static characteristics ofGTR Static characteristics ofGTR O I

Saturat ion region mlfig(active) region Amplifying cut-off region i i i b1 b2 b3 i b1 U < i ce b2 < i b3 47 Power Electronics Switching characteristics ofGTR Switching characteristics ofGTR 10% 90% 10% 90% I I I I i b1 b1 i cs cs b 0 0 c t 0 t d t 1 t on t r t 2 I 1 b I cs t 3 t s I 2 b t t off 4 t f t 5 t t Turn Turn Turn Turn – – – – – – – – – – – – Turn Falling time Storage time Turn Rise time Turn Turn Falling time Storage time Turn Rise time Turn - - - - off transient on transient off transient on transient ------off time on timet on delaytimet off time on timet on delaytimet t t r r t t f f t t t t s on s on off off 48 d d Power Electronics Second breakdown ofGTR Second breakdown ofGTR 49 Power Electronics Safe operatingarea (SOA)ofGTR Safe operatingarea (SOA)ofGTR I cM O I c SOA P SB P cM U ceM U ce 50 Power Electronics effect transistor 1.4.3 Powermetal effect transistor 1.4.3 Powermetal Transistor Field Effect A classification Transistor Field Effect A classification (FET) (FET) Basic structure Basic Basic structure Basic Junction FET(JFET) Metal Junction FET(JFET) Metal - - onside onside p channel n channel p channel n channel — — - - semiconductor FET(MOSFET) semiconductor semiconductor FET(MOSFET) semiconductor Power MOSFET Power MOSFET - - oxide oxide G - - semiconductor field semiconductor field N channel N Static induction transistor (SIT) Static inductiontransistor Static induction transistor (SIT) Static inductiontransistor D S Symbol Symbol G Power MOSFET Power MOSFET P channel P S D 51 Power Electronics Structures ofpower MOSFET Structures ofpower MOSFET cells Multiple parallel structure Also vertical cells Multiple parallel structure Also vertical – – – – Polygon VVMOS, VDMOS cells Polygon VVMOS, VDMOS cells — — - - shaped shaped VMOS VMOS A structureof hexagoncells A structureof hexagoncells 52 Power Electronics Physics ofMOSFET operation Physics ofMOSFET operation Off Off - - state state appears across n off-state voltage reverse-biased p-n - region - junction is 53 Power Electronics Physics ofMOSFET operation Physics ofMOSFET operation On On - - state state reverse biased contacts, etc. channel,source anddrain conducting resistances of on resistance= total conducting channel through drain currentflows channel induces conducting positive gatevoltage p-n - junction isslightly n - region and n - region, 54 Power Electronics Static characteristics ofpowerMOSFET Static characteristics ofpowerMOSFET 55 Power Electronics Switching characteristics ofpowerMOSFET Switching characteristics ofpowerMOSFET R Turn Turn s – – – – u p Rise time Turn Rise time Turn - - on transient on transient R - - on delay timet on delay timet G u GS t t r r R R F + L U E i D i D d(on) d(on) u u GSP u GS u i O O O T D p t d(on) Turn Turn – – – – Falling time Turn Falling time Turn - - t off transient off transient r - - off delay timet off delay timet t d(off) t t f f t f d(off) d(off) 56 t t t Power Electronics Specifications ofpower MOSFET Specifications ofpower MOSFET Inter On (On Peak pulseddraincurrent I Continuous draincurrent I Drain SOA ofpower MOSFET – – – – – – – – Inter On (On Peak pulseddraincurrent I Continuous draincurrent I Drain SOA ofpower MOSFET No secondbreakdown Short circuitoutput capacitance transfercapacitance Reverse Short circuitinputcapacitance No secondbreakdown Short circuitoutput capacitance transfercapacitance Reverse Short circuitinputcapacitance - - terminal capacitances terminal capacitances - - source breakdownvoltage U source breakdownvoltage U - - state) resistanceR state) resistanceR D D DS(on) DM DS(on) DM C C C C C C rss rss iss iss oss oss ======C C C C C C GS GD GS GD DS DS DS DS + + + + C C C C GD GD GD GD 57 Power Electronics Examples ofcommercial powerMOSFET Examples ofcommercial powerMOSFET 58 Power Electronics Features andapplications ofpowerMOSFET Features andapplications ofpowerMOSFET voltage On Majority operating frequency(could behundredsofkHz) Majority Voltage resistance rather thancurrent rating Part number isselectedonthebasis ofon voltage On Majority operating frequency(could behundredsofkHz) Majority Voltage resistance rather thancurrent rating Part number isselectedonthebasis ofon – – – – than 10kW usedatvoltages lessthan500Vandpower less Usually 1000V devices areavailable, power levels(100W) - than 10kW usedatvoltages lessthan500Vandpower less Usually 1000V devices areavailable, power levels(100W) - resistance increasesrapidly withratedblocking resistance increasesrapidly withratedblocking ------driven device,simpledrive circuit driven device,simpledrive circuit carrier device,betterthermal stability carrier device,fastswitching speed,high carrier device,betterthermal stability carrier device,fastswitching speed,high but areuseful onlyatlow but areuseful onlyatlow - - 59 Power Electronics The bodydiodeof powerMOSFET The bodydiodeof powerMOSFET The bodydiode The bodydiode Equivalent circuit Equivalent circuit 60 Power Electronics 1.4.4 MOSFET MOSFET 1.4.4 Combination ofMOSFET andGTR • Features • • • Application • Features • • • Application Combination ofMOSFET andGTR GTR GTR On MOSFET, and arecomparablewiththose ofaGTR Easy todrive Faster thanGTR, butslowerthanpower MOSFET The device ofchoice in500 levels of severalkW to severalMW On MOSFET, and arecomparablewiththose ofaGTR Easy todrive Faster thanGTR, butslowerthanpower MOSFET The device ofchoice in500 levels of severalkW to severalMW - - : lowconductionlosses(esp : lowconductionlosses(esp state lossesare muchsma : fasterswitchingsp state lossesare muchsma : fasterswitchingsp — Insulated — Insulated larger conduction losses (especially for hi conductionlosses (especially for larger longer switchingtimes,current larger conduction losses (especially for hi conductionlosses (especially for larger longer switchingtimes,current IGBT IGBT — — similar topower MOSFET similar topower MOSFET eed, easyto eed, easyto - - gate bipolartransistor gate bipolartransistor - - 1700V applications, atpower ecially at larger blockingvolta ecially atlarger 1700V applications, atpower ecially at larger blockingvolta ecially atlarger ller thanthose ofapower ller thanthose ofapower - - driven driven drive (voltage drive (voltage gher blockingvoltages) gher gher blockingvoltages) gher - - driven), driven), ges), ges), IGBT IGBT 61 Power Electronics Structure andoperation principleofIGBT Structure andoperation principleofIGBT Basic structure Basic Basic structure Basic J mte Gate Emitter 3 N E + J J P 2 1 N + C a) N N P + G + - N Collector + P N + Drift region Injecting layer Buffer layer modulation leading toconductivity are injectedintodriftregion, (up to1700V) useful athigher voltages times, loweron MOSFET: slower switching compared with power On extra pregion power MOSFET,except Basic structuresimilarto Also multiplecellstructure modulation leading toconductivity are injectedintodriftregion, (up to1700V) useful athigher voltages times, loweron MOSFET: slower switching compared with power On extra pregion power MOSFET,except Basic structuresimilarto Also multiplecellstructure - - state: minoritycarriers state: minoritycarriers - - resistance, resistance, 62 Power Electronics Equivalent circuit andcircuitsymbolofIGBT Equivalent circuit andcircuitsymbolofIGBT G Equivalent circuit Equivalent circuit I - + D I - D R Drift region Drift resistance on R E N V + - J1 + C I C Circuit symbol Circuit symbol G C E 63 Power Electronics Static characteristics ofIGBT Static characteristics ofIGBT U RM Saturation region Saturation blocking region (On region) Reverse I O C blocking) region blocking) Cut-off (forward Active region Active U U U FM GE(th) GE U CE 64 Power Electronics 10% 90% Switching characteristics ofIGBT Switching characteristics ofIGBT 90% 10% U U U U I I GEM GEM CM GE I CM CE O C 0 0 U t d(on) CEM t t on fv1 t r t U fv2 I GEM CM U CE(on) t d(off) t fi1 t off t t fi2 f t current tail current t t turn-off: power MOSFET IGBT turn-offand difference between The major MOSFET turn-on similar topower IGBT turn-onis There iscurrent – the drift region. stored chargein turn-off dueto the tailing intheIGBT 65 Power Electronics Parasitic Parasitic Location ofequivalentdevices Location ofequivalentdevices compose aparasitic Modern High emitter currenttends tolatchthe parasitic Main currentpath compose aparasitic Modern High emitter currenttends tolatchthe parasitic Main currentpath IGBTs IGBTs thyristor thyristor are essentially latch are essentially latch pnp pnp thyristor thyristor transistor andthe parasitic transistor andthe parasitic and latch and latch inside IGBT. inside IGBT. - - up proof up proof Complete IGBT equivalent circuit Complete IGBTequivalent Complete IGBT equivalent circuit Complete IGBTequivalent - - up inIGBT up inIGBT thyristor thyristor npn npn transistor transistor on. on. 66 Power Electronics Specifications ofIGBT Specifications ofIGBT Other issues: Other issues: Maximum powerdissipation P Peak pulsedcollector current I Continuous collectorcurrent I Collector Usually fabricated withananti SOA ofIGBT Maximum powerdissipation P Peak pulsedcollector current I Continuous collectorcurrent I Collector Usually fabricated withananti SOA ofIGBT – – power MOSFET. The IGBThas arectangularSOA power MOSFET. The IGBThas arectangularSOA - - emitter breakdownvoltage U emitter breakdownvoltage U C C - CM CM - CM CM parallel fast diode parallel fast diode with similarshape tothe with similarshape tothe CES CES 67 Power Electronics Examples ofcommercial IGBT Examples ofcommercial IGBT 68 Power Electronics 1.5 Othernewpower electronicdevices 1.5 Othernewpower electronicdevices MOS controlled Static induction Static inductiontransistor Power integrated circuitandpower module Integrated gate MOS controlled Static induction Static inductiontransistor Power integrated circuitandpower module Integrated gate - - thyristor commutated thyristor commutated thyristor thyristor — — — — — — SITH SITH MCT MCT SIT SIT thyristor thyristor — — IGCT IGCT 69 Power Electronics Static inductiontransistor Static inductiontransistor Features transistor Another name:power junctionfieldeffect Features transistor Another name:power junctionfieldeffect – – – – – – – – – – Major Fast switching,comparable topowerMOSFET Higher power Higher conduction lossesthanpowerMOSFET Normally normally Major Fast switching,comparable topowerMOSFET Higher power Higher conduction lossesthanpowerMOSFET Normally normally - - carrier device carrier device — — - - - - off, but with evenhigheron off, but with evenhigheron on device, notconvenient (couldbemade on device, on device, notconvenient (couldbemade on device, power JFET power JFET - - handling capability thanpowerMOSFET handling capability thanpowerMOSFET — — SIT SIT - - state losses) state losses) 70 Power Electronics Static induction Static induction Features other names Features other names – – – – – – – – – – – – injecting layer Minority Field controlled Power Field controlleddiode Faster switching speedsthanGTO Normally normally injecting layer Minority Field controlled Power Field controlleddiode Faster switching speedsthanGTO Normally normally - - handling capability similartoGTO handling capability similartoGTO - - - - carrier device,aJFETst carrier device,aJFETst - - off, but with evenhigheron off, but with evenhigheron on device, notconvenient (couldbemade on device, on device, notconvenient (couldbemade on device, thyristor thyristor thyristor thyristor — — FCT FCT — — ructure withanadditional ructure withanadditional SITH SITH - - state losses) state losses) 71 Power Electronics MOS controlled MOS controlled turned onand turnedoffequallywell. The difficultyishowto designaMCTthatcanbe circuits usingGTO. potentially willsignificantly simplythedesignof gates controllingboth turn Essentially aGTOwith integratedMOS remains uncertain. still notcommercialized inalarge scale.Thefuture Once believed asthemostpromising device,but turned onand turnedoffequallywell. The difficultyishowto designaMCTthatcanbe circuits usingGTO. potentially willsignificantly simplythedesignof gates controllingboth turn Essentially aGTOwith integratedMOS remains uncertain. still notcommercialized inalarge scale.Thefuture Once believed asthemostpromising device,but thyristor thyristor - - on andturn on andturn — — MCT MCT - - off that off that - - driven driven 72 Power Electronics Integrated gate Integrated gate Short name:GCT providing thegatecurrents drive circuitwithmultiple Actually thecloseintegration ofGTOandthegate family, introducedin1997 byABB The newestmemberof thepowersemiconductor replace GTO Competing withIGBTandothernew devicesto speed aresuperior toGTO Conduction drop,gatedriverloss, andswitching Short name:GCT providing thegatecurrents drive circuitwithmultiple Actually thecloseintegration ofGTOandthegate family, introducedin1997 byABB The newestmemberof thepowersemiconductor replace GTO Competing withIGBTandothernew devicesto speed aresuperior toGTO Conduction drop,gatedriverloss, andswitching - - commutated commutated MOSFETs MOSFETs thyristor thyristor in parallel in parallel — — IGCT IGCT 73 Power Electronics Power integrated circuit andpowermodule devices power electronic Integration of Power integrated circuit andpowermodule Two major challenges Two major challenges – – – – Electrical isolation ofhigh voltage components temperatures than low Thermal management Electrical isolation ofhigh voltage components temperatures than low Thermal management power module Packaging integration: power integratedcircuit Monolithic integration: power module Packaging integration: power integratedcircuit Monolithic integration: — — - - voltage devices voltage devices power devices usually athigher power devices usually athigher - - voltage components fromlow voltage components fromlow circuit, protection circuit, controlcircuit Module(IPEM): Integrated power electronics circuit power devices,drive Intelligen devices packagedtogether powermodule: Ordinary power IC, SPIC,Smartswitch) Smart power integrated circuit(Smart High voltage integrated circuit (HVIC) t powermodule(IPM): power devices,drive circuit, protection just power - - 74 Power Electronics Review ofdevice classifications Review ofdevice classifications power electronic power electronic power electronic power electronic power electronic power electronic devices devices devices devices devices devices ordinary powerdiode, Bipolar devices (Minority IGCT, IGBT, SITH,MCT ordinary powerdiode, Bipolar devices (Minority IGCT, IGBT, SITH,MCT IGBT, SIT,SITH,MCT,IGCT MCT, IGCT GTR,power MOSFET, IGBT,SIT,SITH, SBD, powerMOSFET, SIT Current Pulse (Field Voltage Composite devices:IGBT, SITH,MCT Uni Level IGBT, SIT,SITH,MCT,IGCT MCT, IGCT GTR,power MOSFET, IGBT,SIT,SITH, SBD, powerMOSFET, SIT Current Pulse (Field Voltage Composite devices:IGBT, SITH,MCT Uni Level thyristor, GTO,GTR - - polar devices(Majority carrierdevices): polar devices(Majority carrierdevices): ------sensitive (Level sensitive (Level triggered devices: controlled devices):powerMOSFET, triggered devices: controlled devices):powerMOSFET, - - - - driven (current driven (current driven (voltage driven (voltage - - thyristor thyristor triggered) devices: triggered) devices: - - - - controlled) devices: controlled) devices: controlled) devices controlled) devices thyristor thyristor carrier devices): carrier devices): , GTO, GTR, , GTO, GTR, , GTO , GTO 75 Power Electronics Comparison ofthe majortypesofdevices Comparison ofthe majortypesofdevices Power Power - - handling capability handling capability 76 Power Electronics Comparison ofthe majortypesofdevices Comparison ofthe majortypesofdevices the switchingfrequency Maximum allowedcurrent densityasafunctionof the switchingfrequency Maximum allowedcurrent densityasafunctionof 77