Application Note Thyristor Power Electronics
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Brochure Power Electronics for Motor Drives
11 29 18 00 03/2021 Note: All information is based on our present knowledge and is to be used for information purposes only. The specifications of our components may not be considered as an assurance of component characteristics. Power Electronics for Motor Drives Motor for Electronics Power Drives Motor SERVO PERFORMANCE RANGE DRIVES 0.2kW - 75kW Since the first appearance of motor drives, - Robotics - Material handling SEMIKRON has been committed to supplying - Machine tools solutions for every power range. Starting with the first insulated power module, the SEMIPACK Compact designs and high power density High peak overload capabilities rectifier module series more than 40 years ago, Multiple axis in one drive or modular drives the MiniSKiiP in particular has revolutionised the with common DC bus motor drive design for low and medium power Decentralized high IP grade drives systems. Products SEMITOP E1/E2 MiniSKiiP Today SEMIKRON offers the complete industrial SEMiX 6 Press-Fit standard power module portfolio that serves SEMIPACK a power range of 0.2kW to several megawatts. Drivers The portfolio is completed with high power IPMs, power electronic stacks and a compre- hensive product line of driver electronics that help to reduce development effort and time- to-market. The latest Generation 7 IGBTs of two different suppliers, optimized for motor drive applications, boost performance and power density. LOW/MID MID/HIGH POWER DRIVES POWER DRIVES 0.2kW - 300kW 300kW - 10MW - Pumps and fans - Oil, gas and mining industry - Process automation -
Power Electronics
Diodes and Transistors Semiconductors • Semiconductor devices are made of alternating layers of positively doped material (P) and negatively doped material (N). • Diodes are PN or NP, BJTs are PNP or NPN, IGBTs are PNPN. Other devices are more complex Diodes • A diode is a device which allows flow in one direction but not the other. • When conducting, the diodes create a voltage drop, kind of acting like a resistor • There are three main types of power diodes – Power Diode – Fast recovery diode – Schottky Diodes Power Diodes • Max properties: 1500V, 400A, 1kHz • Forward voltage drop of 0.7 V when on Diode circuit voltage measurements: (a) Forward biased. (b) Reverse biased. Fast Recovery Diodes • Max properties: similar to regular power diodes but recover time as low as 50ns • The following is a graph of a diode’s recovery time. trr is shorter for fast recovery diodes Schottky Diodes • Max properties: 400V, 400A • Very fast recovery time • Lower voltage drop when conducting than regular diodes • Ideal for high current low voltage applications Current vs Voltage Characteristics • All diodes have two main weaknesses – Leakage current when the diode is off. This is power loss – Voltage drop when the diode is conducting. This is directly converted to heat, i.e. power loss • Other problems to watch for: – Notice the reverse current in the recovery time graph. This can be limited through certain circuits. Ways Around Maximum Properties • To overcome maximum voltage, we can use the diodes in series. Here is a voltage sharing circuit • To overcome maximum current, we can use the diodes in parallel. -
Sic Power Devices and Modules Application Note Rev.003
© 2017 ROHM Co., Ltd. No. 60AP001E Rev.001 2017.4 Application Note SiC Power Devices and Modules Application Note Rev.003 Note: The evaluation data and other information described in this application note are the results of evaluation by ROHM under identical conditions and presented as references. We do not guarantee the characteristics described herein. © 2020 ROHM Co., Ltd. No. 63AN102E Rev.003 1/88 2020.11 SiC Power Devices and Modules Application Note Contents 1. SiC semiconductor ........................................................................................................................ 5 1.1 Physical properties and features of SiC .............................................................................................................. 5 1.2 Features as power devices ................................................................................................................................. 5 2. Features of SiC SBD ....................................................................................................................... 6 2.1 Device structure and features ............................................................................................................................. 6 2.2 Forward characteristics of SiC SBD .................................................................................................................... 7 2.3 Recovery characteristics of SiC SBD .................................................................................................................. 8 2.4 Forward -
Brochure Power Electronics for Solar Inverters
Note: All information is based on our present knowledge and is to be used for information purposes only. The specifications of our components may not be considered as an assurance of component characteristics. Solar Energy Power Electronics for Solar Inverters 11 29 17 80 03/2021 17 29 11 PERFORMANCE RANGE SEMIKRON’s portfolio includes a wide range of products for efficient solar inverters in all power ranges: residential, industrial and utility scale applications. From individual modules, including dedicated drivers, to high power SKiiP 4 IPMs and ready-to-use power electronic stacks – SEMIKRON has the solution. SEMIKRON offers a large portfolio of 3-level power modules, IPMs and power electronic stacks, which can reduce system costs significantly as well as optimize annual energy production, especially for increased DC voltages up to 1500VDC. STRING CENTRAL INVERTERS INVERTERS 5kW - 300kW 250kW - 6MW - Residential - Commercial/Industrial - Commercial/Industrial - Utility 1500VDC Capability 1500VDC Capability High efficiency High efficiency High reliability to reduce downtime High reliability to reduce downtime Products Products SEMITOP E1/E2 SEMiX 5 MiniSKiiP SEMiX 3 Press-Fit SEMiX 5 SEMITRANS Drivers SEMITRANS 10 SEMITRANS 20 SKiiP 3/4 IPM Drivers Power Electronic Stacks Technology Highlight The New Benchmark 3-Level Topologies in Combination with Generation 7 IGBT Technology SEMIKRON has introduced 950V and 1200V Generation 7 IGBTs Additionally the Generation 7 IGBTs share the from two different manufacturers. Both Generation 7 IGBTs following features: have fundamental improvements over the previous versions. 20% lower on-state voltage Vce,sat Thanks to a new chip design, the chip size is an average of Operation junction temperature of 175°C during overload 25% smaller across all current classes. -
Silicon Carbide Device Update
Silicon Carbide Device Update David Sheridan VP Technology Development High Megawatt Power Conditioning System Workshop [email protected] www.semisouth.com SiC Advantages Material property Si 4H-SiC GaN Bandgap 1.12 eV 3.25 eV 3.4 eV Breakdown field 0.25 MV/cm ~3 MV/cm ~3 MV/cm Thermal conductivity 1.5 W/cm•K 4.9 W/cm•K 1.3 W/cm•K Electron mobility 1200 cm 2/V•s 800 cm 2/V•s 900 cm 2/V•s Dielectric constant 11.7 9.7 9 o Silicon carbide is an ideal power semiconductor material o Most mature “wide bandgap” power semiconductor material o Electrical breakdown strength ~ 10X higher than Si o Commercial substrates available since 1991 – now at 100 mm dia; 150 mm dia soon o Defects up to 1,000 times less than GaN o Thermal conductivity ~ 3X greater than Si or GaN SiC UPDATE 2 SemiSouth Introduction SemiSouth → SiC Power Semi Technology Leader → 1200 V – 1700 V Trench “normally – off” JFETs → 650 V, 1200V – 1700 V Trench “normally – on” JFETs → 1200 V Schottky Diodes SemiSouth silicon carbide trench technology offers higher efficiency, greater power density & higher reliability than comparable silicon-based devices Solar HEV Servers Wind SiC Wafer SiC UPDATE 3 SemiSouth VJFET Technology SemiSouth • Why the SiC Trench JFET? Vertical-Channel JFET* Cost 3-10 X smaller die size Up to 50% fewer manufacturing steps Performance 5-10X lower switching energies Normally-on or off (industry first and only) Enables high-frequency and high-efficiency Industry best on-resistance per unit area Reliability Rugged structure for SiC JFET switch Over -
Thyristor Switches
CHAPTER 5 Thyristor Switches Limits of the traditional contactor switched banks • High inrush current and over voltages • Risk of over voltages due to the arc breaking • Longer reconnecting time: more than 30 sec • More demanding maintenance compared with static switches. General advantages of Power Factor Correction • Reduced losses on mains and power transformers • Increase of plant available power • Less voltage drop in the plant Thyristor switched capacitor bank benefits include: • Minimises network disturbances such as Voltage Drop and Flicker Thyristor switched capacitor bank is the best and sometimes • No moving parts therefore reduced maintenance (i.e. no the sole choice when it is necessary to compensate loads Electro-magnetic contactors) over short periods of time. Examples are steel companies, • Enhanced capacitor life expectancy. lifting apparatus (cranes, quay cranes, etc), cable makers (extruders, etc), welding machines, robots, compressors, In general there is a comprehensive PLANT EFFICIENCY; skiing lift stations, LV industrial networks (chemical plants, because power factor correction is fast, the power paper mills, automotive suppliers). Thyristor switched transformer and line design can be done considering only capacitor bank are also an ergonomic solution where noise the actual load. can be problematic, like hotels, banks, offices, service Therefore longer working life and reliability of plant. infrastructures (telecommunications board, informatics Static switches allow unlimited operations. ’boards, hospitals, malls). Steps switching is also done limiting transient phenomena that inside normal plants stresses the capacitors reducing their working life. General Characteristics ICAR SINCHRO FAST SWITCH FEATURES are Further ADVANTAGES described below: 1. 1Possibility to use SFS with ICAR RPE 12BTA regulator. • Switching speed: 60ms 2. -
Present Status and Future Prospects for Power Semiconductors
Present Status and Future Prospects for Power Semiconductors Ken’ya Sakurai 1. Introduction (1) Devices related to multimedia ① High-voltage silicon diodes and damper diodes From the viewpoint of a highly information-orient- with high-speed switching performance to im- ed society in the coming 21st century, the social prove the picture quality of the CRT (cathode infrastructure will undergo rapid repairs and reforma- ray tube) display monitors and televisions tions. What will bring us to a society where computers ② Low on-resistance SOP-8 power MOSFETs and communications are closely intertwined? Techni- that extend the battery life of portable elec- cal innovations have always brought us advantages as tronic appliances such as notebook computers well as disadvantages. Any future technical innova- (2) Vehicles and rolling stock tions must definitely exclude disadvantages. ① Intelligent power MOSFETs that decrease the A highly information-oriented society will result in size and improve reliability of car electronics a great increase in electric energy consumption. Prob- systems lems of the global environment, social environment, ② High-voltage, high-power NPT (non punch- and energy resources must be improved through more through)-IGBT modules and flat IGBTs that serious consideration, with electrical manufactures reduce rolling stock size, weight, and energy leading these technical innovations. Development of consumption high power generation and conversion efficiency and (3) Power conversion (inverter control) energy-saving technology for electron devices are core ① Molded IGBTs, IGBT modules, and IGBT-IPMs technologies. More specifically, power electronics that for applications including NC (numerical con- control electric energy increases in importance, and trol) equipment, general-purpose inverters, especially power semiconductor devices as the key servo mechanisms, welding machines, and devices are required for further advances in perfor- UPSs (uninterruptible power system) mance and functions. -
Thyristors.Pdf
THYRISTORS Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458. Thomas L. Floyd All rights reserved. Thyristors Thyristors are a class of semiconductor devices characterized by 4-layers of alternating p and n material. Four-layer devices act as either open or closed switches; for this reason, they are most frequently used in control applications. Some thyristors and their symbols are (a) 4-layer diode (b) SCR (c) Diac (d) Triac (e) SCS Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458. Thomas L. Floyd All rights reserved. The Four-Layer Diode The 4-layer diode (or Shockley diode) is a type of thyristor that acts something like an ordinary diode but conducts in the forward direction only after a certain anode to cathode voltage called the forward-breakover voltage is reached. The basic construction of a 4-layer diode and its schematic symbol are shown The 4-layer diode has two leads, labeled the anode (A) and the Anode (A) A cathode (K). p 1 n The symbol reminds you that it acts 2 p like a diode. It does not conduct 3 when it is reverse-biased. n Cathode (K) K Electronic Devices, 9th edition © 2012 Pearson Education. Upper Saddle River, NJ, 07458. Thomas L. Floyd All rights reserved. The Four-Layer Diode The concept of 4-layer devices is usually shown as an equivalent circuit of a pnp and an npn transistor. Ideally, these devices would not conduct, but when forward biased, if there is sufficient leakage current in the upper pnp device, it can act as base current to the lower npn device causing it to conduct and bringing both transistors into saturation. -
Thermal Assessment and In-Situ Monitoring of Insulated
Thermal Assessment and In-Situ Monitoring of Insulated Gate Bipolar Transistors in Power Electronic Modules Preprint Erick Gutierrez,1 Kevin Lin,1 Patrick McCluskey,1 and Douglas DeVoto2 1 University of Maryland 2 National Renewable Energy Laboratory Presented at ASME 2019 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems (IPACK2019) Anaheim, California October 7–9, 2019 NREL is a national laboratory of the U.S. Department of Energy Conference Paper Office of Energy Efficiency & Renewable Energy NREL/CP-5400-73583 Operated by the Alliance for Sustainable Energy, LLC February 2020 This report is available at no cost from the National Renewable Energy Laboratory (NREL) at www.nrel.gov/publications. Contract No. DE-AC36-08GO28308 Thermal Assessment and In-Situ Monitoring of Insulated Gate Bipolar Transistors in Power Electronic Modules Preprint Erick Gutierrez,1 Kevin Lin,1 Patrick McCluskey,1 and Douglas DeVoto2 1 University of Maryland 2 National Renewable Energy Laboratory Suggested Citation Gutierrez, Erick, Kevin Lin, Patrick McCluskey, and Douglas DeVoto. 2020. Thermal Assessment and In-Situ Monitoring of Insulated Gate Bipolar Transistors in Power Electronic Modules: Preprint. Golden, CO: National Renewable Energy Laboratory. NREL/CP-5400-73583 https://www.nrel.gov/docs/fy20osti/73583.pdf. NREL is a national laboratory of the U.S. Department of Energy Conference Paper Office of Energy Efficiency & Renewable Energy NREL/CP-5400-73583 Operated by the Alliance for Sustainable Energy, LLC February 2020 This report is available at no cost from the National Renewable Energy National Renewable Energy Laboratory Laboratory (NREL) at www.nrel.gov/publications. -
Data Sheet Freemaq PCSK-Multi PCSK
POWER ELECTRONICS 45 FREEMAQ PCSK FREEMAQ MULTI PCSK UTILITY SCALE BATTERY INVERTER POWER CONVERSION SYSTEM FRU FIELD REPLACEABLE UNITS MODULAR DESIGN UP TO 3 INDEPENDENT BESS INPUTS ICOOL 3 PROVEN HARDWARE AND ROBUST OUTDOOR DESIGN FEATURED WITH THE 4 QUADRANT LATEST CONTROL The Freemaq PCSK is a modular solution from 1700 kW 3 LEVEL TOPOLOGY to 3800 kW with configurable DC and AC voltages making it compatible with all battery technology and manufacturers. Power Electronics is a proven partner in the solar and energy NEMA 3R / IP55 storage market. The PCSK has been designed to be the lowest LCOE solution in the market for storage applications. The Power Electronics Freemaq PCSK offers proven hard- ware to meet storage and grid support challenges.The energy production industry is embracing renewable energy sources. However, high penetration creates power transmission instability challenges, thus Grid Operators require stringent dynamic and static grid support features for solar inverters and Power Conversion Systems (PCS). The MULTI PCSK can support two or three independent battery systems and optimize the storage facility. The converters can perform grid support functions such as: Peak Shaving, Ramp Rate Control, Frequency Regulation, Load Leveling and Voltage Regulation, controlled by a Power Plant Controller or SCADA. The converters stations are turn- key solutions ready for connection to the battery container and MV power distribution wiring. Units are designed for concrete pads or piers, open skids or integrated into full container solutions. POWER ELECTRONICS COMPACT DESIGN - EASY TO SERVICE By providing full front access the Freemaq PCSK series With the Freemaq PCSK, Power Electronics offers its most simplifies the maintenance tasks, reducing the MTTR (and compact solution, achieving 3.8MW in just 12ft long, reducing achieving a lower OPEX). -
Eaton's Power Electronics Portfolio
Eaton’s Power Electronics Portfolio • Bob Yanniello • June 27, 2017 © 2015 Eaton. All Rights Reserved.. © 2015 Eaton. All Rights Reserved.. 2 © 2015 Eaton. All Rights Reserved.. 3 © 2015 Eaton. All Rights Reserved.. 4 Power Xpert Inverter – 1.0 – 2.5 MW Inverter Throat – direct Step-up coupling Transformer Tracker (or AC) power and controls © 2015 Eaton. All Rights Reserved.. 5 Power module design • Latest generation of Semikron Skiip 4 IGBT – integrated driver & heat sink • Rated for 175°C and high cyclic duty applications • Vishay film capacitors • User replaceable modules © 2015 Eaton. All Rights Reserved.. 6 Power Xpert Utility-Scale Solar Inverter 1500Vdc – 98.5% efficiency DC Power Conversion AC Compartment Compartments Compartment Up to 21x 350A contactors with fuses AC Line Filter 3200A Main Breaker with MO and Close LOTO coupled to DC Feeders . Transformer AC Line From . Filter Combiner . boxes Open / 20A with LOTO Close AC Line Contactor Filter opens Positive and UPS Negative DC LOTO SEL Inverter poles 751 Control Relay Power © 2015 Eaton. All Rights Reserved.. 7 Power Xpert™ Energy Storage Inverter 1250 V max • Battery Types • LG Chem (LMO) • Kokam (LTO) • Enerdel (LTO) • Altair Nano (LTO) • ZBB (flow) 500kW outdoor Inverter • Xtreme (ALA) 3MW site (indoor Inverters) • Mitsubishi (LMO) • JCI (NCA) • Samsung (LMO) • SPS/Lischen • Powin • Primus 500kW Compact Pad Mount © 2015 Eaton. All Rights Reserved.. 8 Power Xpert® Energy Storage Inverter Power Xpert Inverter 60A @ 480 Inverter DC VAC connection AC Line Filter To Battery container for aux power To Transformer From Battery AC Line container Filter AC Line Filter Inverter Controls Power Inverter Controller 15A @ 3A @ 120VAC F.O. -
Sic POWER MODULES
SiC POWER MODULES SiC POWER MODULES Please visit our website for further details. www.MitsubishiElectric.com Revised publication, effective May 2015. Superseding publication of HG-802B Sep. 2014. Specifications subject to change without notice. HG-802B 2015 SiC with superior characteristics Power loss reduced Si SiC Innovative Power Devices Gate Gate SiC has approximately 10 times the critical breakdown Source Source Source Source n+ n+ n+ - n+ strength of silicon. Furthermore, the drift layer that is a p p p n p n- main cause of electrical resistance is one-tenth of the SiC substrate Drain electrode thickness. This allows a large reduction in electrical resistance and, in turn, reduces power loss. This SiC for a Sustainable Future SiC MOSFET structure characteristic enables dramatic reductions in conductivity Traction, industrial equipment, building facilities, electric vehicles, renewable energies, home appliances... 1 loss and switching loss in power devices. Current flow Power devices are a key component in power electronics products for contributing to the realization of a low-carbon Si substrate 10 society. Attracting attention as the most energy-efficient power device is one made using new material, Drain electrode Large reduction in Si MOSFET structure electrical resistance silicon-carbide (SiC). The material characteristics of SiC have led to a dramatic reduction in power loss and significant energy savings for power electronics devices. Mitsubishi Electric began the development of elemental High-temperature operation SiC technologies in the early 1990s and has since introduced them to achieve practical energy-saving effects for SiC Conduction band High temperature When the temperature increases, electrons are exited to products manufactured using SiC.