SiC POWER MODULES
SiC POWER MODULES
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Revised publication, effective May 2015. Superseding publication of HG-802B Sep. 2014. Specifications subject to change without notice. HG-802B 2015 SiC with superior characteristics
Power loss reduced Si SiC Innovative Power Devices Gate Gate SiC has approximately 10 times the critical breakdown Source Source Source Source n+ n+ n+ - n+ strength of silicon. Furthermore, the drift layer that is a p p p n p n- main cause of electrical resistance is one-tenth of the SiC substrate Drain electrode thickness. This allows a large reduction in electrical resistance and, in turn, reduces power loss. This SiC for a Sustainable Future SiC MOSFET structure characteristic enables dramatic reductions in conductivity Traction, industrial equipment, building facilities, electric vehicles, renewable energies, home appliances... 1 loss and switching loss in power devices. Current flow Power devices are a key component in power electronics products for contributing to the realization of a low-carbon Si substrate 10 society. Attracting attention as the most energy-efficient power device is one made using new material, Drain electrode Large reduction in Si MOSFET structure electrical resistance silicon-carbide (SiC). The material characteristics of SiC have led to a dramatic reduction in power loss and significant energy savings for power electronics devices. Mitsubishi Electric began the development of elemental High-temperature operation SiC technologies in the early 1990s and has since introduced them to achieve practical energy-saving effects for SiC Conduction band High temperature When the temperature increases, electrons are exited to products manufactured using SiC. Innovative SiC power modules are contributing to the realization of a low-carbon the conduction band and the leakage current increases. At times, this results in abnormal operation. society and more affluent lifestyles. However, SiC has three times the band gap width of SiC: Silicon Carbide-Compound that fuses silicon and carbon at a ratio of one-to-one. Band gap Band gap is approx. silicon, preventing the flow of leakage current and enabling 3 times that of Si operation at high temperatures.
Traction Valence band • Size and weight of traction inverters reduced • Regenerative performance enhanced • Noise reduced Home appliances High-speed switching operation • Energy savings increased Hybrid SiC power modules • Cooling system more compact Si With SiC, owing to the high dielectric breakdown, power • Equipment more compact/thinner Turn-on switching waveform SiC loss is reduced and high-voltage is easier to achieve, it is High-speed possible to use Schottky Barrier Diodes (SBDs), which Industrial equipment switching operations realized cannot be used with Si. SBDs can realize high-speed • High torque, high speed, size reduced switching motion because they don't have accumulation • Cooling system more compact • Manufacturing productivity enhanced Ic:500A/div carriers. As a result, high-speed switching can be realized. Merits of Incorporating
SiC Power Modules Vce:250V/div
Electric/hybrid vehicles t:1µs/div • Power loss reduced • Cooling system more compact • Regenerative power used efficiently Heat dissipation Renewable energies • Energy conversion efficiency improved Si SiC SiC has three times the heat conductivity of silicon, • Passive components downsized which improves heat dissipation. • Quieter high-speed operation Building facilities • Power loss reduced Thermal • Greater layout freedom as the result of smaller equipment conductivity rate is approx. 3 times that of Si
SiC power modules appropriated by application
Rating Insert Application Product name Model Connection States Voltages[V] Current[A] pages PMH200CS1D060 600 200 6-in-1 Hybrid SiC-IPM Commercially available PMH75-120-Sxxx＊ P3 1200 75 6-in-1 Sample available Full SiC-IPM PMF75-120-Sxxx＊ Sample available FMF400BX-24A 1200 400 4-in-1 Full SiC Power Modules Sample available P4 FMF800DX-24A 1200 800 2-in-1 Sample available Industrial CMH100DY-24NFH 100 equipment CMH150DY-24NFH 150 Hybrid SiC Power Modules for CMH200DU-24NFH 200 High-frequency Switching 1200 2-in-1 Sample available P5 Applications CMH300DU-24NFH 300 CMH400DU-24NFH 400 CMH600DU-24NFH 600 Large Hybrid SiC DIPIPMTM for PV Application PSH50YA2A6 600 50 4-in-1 Commercially available P6 Traction Hybrid SiC Power Modules CMH1200DC-34S 1700 1200 2-in-1 Commercially available Home Hybrid SiC DIPPFCTM PSH20L91A6-A Commercially available 600 20Arms Interleaved P7 appliances Full SiC DIPPFCTM PSF20L91A6-A Commercially available ＊Tentative No.
1 2 SiC with superior characteristics
Power loss reduced Si SiC Innovative Power Devices Gate Gate SiC has approximately 10 times the critical breakdown Source Source Source Source n+ n+ n+ - n+ strength of silicon. Furthermore, the drift layer that is a p p p n p n- main cause of electrical resistance is one-tenth of the SiC substrate Drain electrode thickness. This allows a large reduction in electrical resistance and, in turn, reduces power loss. This SiC for a Sustainable Future SiC MOSFET structure characteristic enables dramatic reductions in conductivity Traction, industrial equipment, building facilities, electric vehicles, renewable energies, home appliances... 1 loss and switching loss in power devices. Current flow Power devices are a key component in power electronics products for contributing to the realization of a low-carbon Si substrate 10 society. Attracting attention as the most energy-efficient power device is one made using new material, Drain electrode Large reduction in Si MOSFET structure electrical resistance silicon-carbide (SiC). The material characteristics of SiC have led to a dramatic reduction in power loss and significant energy savings for power electronics devices. Mitsubishi Electric began the development of elemental High-temperature operation SiC technologies in the early 1990s and has since introduced them to achieve practical energy-saving effects for SiC Conduction band High temperature When the temperature increases, electrons are exited to products manufactured using SiC. Innovative SiC power modules are contributing to the realization of a low-carbon the conduction band and the leakage current increases. At times, this results in abnormal operation. society and more affluent lifestyles. However, SiC has three times the band gap width of SiC: Silicon Carbide-Compound that fuses silicon and carbon at a ratio of one-to-one. Band gap Band gap is approx. silicon, preventing the flow of leakage current and enabling 3 times that of Si operation at high temperatures.
Traction Valence band • Size and weight of traction inverters reduced • Regenerative performance enhanced • Noise reduced Home appliances High-speed switching operation • Energy savings increased Hybrid SiC power modules • Cooling system more compact Si With SiC, owing to the high dielectric breakdown, power • Equipment more compact/thinner Turn-on switching waveform SiC loss is reduced and high-voltage is easier to achieve, it is High-speed possible to use Schottky Barrier Diodes (SBDs), which Industrial equipment switching operations realized cannot be used with Si. SBDs can realize high-speed • High torque, high speed, size reduced switching motion because they don't have accumulation • Cooling system more compact • Manufacturing productivity enhanced Ic:500A/div carriers. As a result, high-speed switching can be realized. Merits of Incorporating
SiC Power Modules Vce:250V/div
Electric/hybrid vehicles t:1µs/div • Power loss reduced • Cooling system more compact • Regenerative power used efficiently Heat dissipation Renewable energies • Energy conversion efficiency improved Si SiC SiC has three times the heat conductivity of silicon, • Passive components downsized which improves heat dissipation. • Quieter high-speed operation Building facilities • Power loss reduced Thermal • Greater layout freedom as the result of smaller equipment conductivity rate is approx. 3 times that of Si
SiC power modules appropriated by application
Rating Insert Application Product name Model Connection States Voltages[V] Current[A] pages PMH200CS1D060 600 200 6-in-1 Hybrid SiC-IPM Commercially available PMH75-120-Sxxx＊ P3 1200 75 6-in-1 Sample available Full SiC-IPM PMF75-120-Sxxx＊ Sample available FMF400BX-24A 1200 400 4-in-1 Full SiC Power Modules Sample available P4 FMF800DX-24A 1200 800 2-in-1 Sample available Industrial CMH100DY-24NFH 100 equipment CMH150DY-24NFH 150 Hybrid SiC Power Modules for CMH200DU-24NFH 200 High-frequency Switching 1200 2-in-1 Sample available P5 Applications CMH300DU-24NFH 300 CMH400DU-24NFH 400 CMH600DU-24NFH 600 Large Hybrid SiC DIPIPMTM for PV Application PSH50YA2A6 600 50 4-in-1 Commercially available P6 Traction Hybrid SiC Power Modules CMH1200DC-34S 1700 1200 2-in-1 Commercially available Home Hybrid SiC DIPPFCTM PSH20L91A6-A Commercially available 600 20Arms Interleaved P7 appliances Full SiC DIPPFCTM PSF20L91A6-A Commercially available ＊Tentative No.
1 2 600V/200A Hybrid SiC-IPM for Industrial Equipment 1200V/400A・1200V/800A Full SiC Power Modules for Industrial Equipment PMH200CS1D060 New FMF400BX-24A/FMF800DX-24A Sample available
SiC-SBD incorporated in an IPM with a built-in drive circuit and protection functions Contributes to reducing size/weight of industrial-use inverters Power loss reduction of approx. 20% contributes to with the mounting area reduced by approx. 60% enhancing the performance of industrial machinery Features Features • Power loss reduced approx. 70% compared to the conventional product* • Hybrid combination of SiC-SBD and IGBT with current and temperature sensors • Low-inductance package adopted to deliver full SiC performance implemented for IPM supplies high functionality and low loss enabling high torque • Contributes to realizing smaller/lighter inverter equipment by significantly reducing and motor speed the package size and realizing a mounting area approx. 60% smaller compared to • Recovery loss (Err) reduced by 95% compared to the conventional product* the conventional product*
• Package compatible with the conventional product* making replacement possible ＊Conventional product:Mitsubishi Electric CM400DY-24NF(1200V/400A 2in1) 2pcs * Conventional product: Mitsubishi Electric S1 Series PM200SC1D060
FWD_SW IGBT_SW Internal circuit diagram : SiC-SBD Power loss comparison FWD_DC IGBT_DC Product lineup Comparison with conventional product package
P Applications Rated Reted Circuit Package size voltage current configration (D ×W) Approx. Si Power module 20% 400A 4-in-1 1200V/400A(2-in-1) 2pcs reduction Industrial 1200V 92.3 × 121.7mm equipment U V W 800A 2-in-1
Power loss [W] Full SiC Power module Approx. 1200V/400A(4-in-1) 1pcs or Si-IPM Hybrid SiC-IPM 60% Footprint 1200V/800A(2-in-1) 1pcs Condition:Vcc=300V, Io=85Arms, fc=15kHz, VD=15V,P.F=1, Modulation=1, N three-phase modulation, Tj=125˚C reduction
1200V/75A Hybrid/Full SiC-IPM for Industrial Equipment Internal circuit diagram 1200V/400A 1200V/800A PMH75-120-Sxxx＊/PMF75-120-Sxxx＊ Sample available Full SiC Power module :SiC-MOSFET :SiC-SBD Full SiC Power module :SiC-MOSFET :SiC-SBD
＊Tentative No. Built-in drive circuit and protection functions realize high functionality
Features Main specifications
• Incorporates SiC-MOSFET with current sensor and Rating 1200V/75A 6in1 built-in drive circuit and protection functions to • Built-in drive circuit deliver high functionality Mounted • Under-voltage protection • Significant reduction in power loss compared to the Functions • Short-circuit protection • Over temperature protection conventional product* (Monitoring IGBT chip surface) • Package compatible with the conventional product* * Conventional product: Mitsubishi Electric IPM L1 Series PM75CL1A120 Power loss comparison 1200V/400A 1200V/800A FWD_SW Tr_SW FWD_SW Tr_SW FWD_SW Tr_SW Internal circuit diagram :SiC-MOSFET :SiC-SBD Power loss comparison FWD_DC Tr_DC Full SiC Power module FWD_DC Tr_DC Full SiC Power module FWD_DC Tr_DC
Full SiC-IPM P SiC-MOSFET with current sense terminal Approx. Approx. 25% 70% Approx. Approx. Drain reduction reduction 70% 70% reduction reduction Gate U V W Power loss [W] Power loss [W] Power loss [W]
Sense Source Si-IPM Hybrid SiC-IPM Full SiC-IPM IGBT module(Si) Full SiC module IGBT module(Si) Full SiC module
N Condition:Vcc=600V, Io=31Arms (assuming a 15kW inverter), fc=15kHz, P.F=0.9, Condition:Vcc=600V, Io=110Arms (assuming a 55kW inverter), fc=15kHz, P.F=0.8, Condition:Vcc=600V, Io=222Arms (assuming a 110kW inverter), fc=15kHz, P.F=0.8, Modulation=1 ,three-phase modulation, Tj=125˚C Modulation=1 ,three-phase modulation, Tj=125˚C Modulation=1 ,three-phase modulation, Tj=125˚C
3 4 600V/200A Hybrid SiC-IPM for Industrial Equipment 1200V/400A・1200V/800A Full SiC Power Modules for Industrial Equipment PMH200CS1D060 New FMF400BX-24A/FMF800DX-24A Sample available
SiC-SBD incorporated in an IPM with a built-in drive circuit and protection functions Contributes to reducing size/weight of industrial-use inverters Power loss reduction of approx. 20% contributes to with the mounting area reduced by approx. 60% enhancing the performance of industrial machinery Features Features • Power loss reduced approx. 70% compared to the conventional product* • Hybrid combination of SiC-SBD and IGBT with current and temperature sensors • Low-inductance package adopted to deliver full SiC performance implemented for IPM supplies high functionality and low loss enabling high torque • Contributes to realizing smaller/lighter inverter equipment by significantly reducing and motor speed the package size and realizing a mounting area approx. 60% smaller compared to • Recovery loss (Err) reduced by 95% compared to the conventional product* the conventional product*
• Package compatible with the conventional product* making replacement possible ＊Conventional product:Mitsubishi Electric CM400DY-24NF(1200V/400A 2in1) 2pcs * Conventional product: Mitsubishi Electric S1 Series PM200SC1D060
FWD_SW IGBT_SW Internal circuit diagram : SiC-SBD Power loss comparison FWD_DC IGBT_DC Product lineup Comparison with conventional product package
P Applications Rated Reted Circuit Package size voltage current configration (D ×W) Approx. Si Power module 20% 400A 4-in-1 1200V/400A(2-in-1) 2pcs reduction Industrial 1200V 92.3 × 121.7mm equipment U V W 800A 2-in-1
Power loss [W] Full SiC Power module Approx. 1200V/400A(4-in-1) 1pcs or Si-IPM Hybrid SiC-IPM 60% Footprint 1200V/800A(2-in-1) 1pcs Condition:Vcc=300V, Io=85Arms, fc=15kHz, VD=15V,P.F=1, Modulation=1, N three-phase modulation, Tj=125˚C reduction
1200V/75A Hybrid/Full SiC-IPM for Industrial Equipment Internal circuit diagram 1200V/400A 1200V/800A PMH75-120-Sxxx＊/PMF75-120-Sxxx＊ Sample available Full SiC Power module :SiC-MOSFET :SiC-SBD Full SiC Power module :SiC-MOSFET :SiC-SBD
＊Tentative No. Built-in drive circuit and protection functions realize high functionality
Features Main specifications
• Incorporates SiC-MOSFET with current sensor and Rating 1200V/75A 6in1 built-in drive circuit and protection functions to • Built-in drive circuit deliver high functionality Mounted • Under-voltage protection • Significant reduction in power loss compared to the Functions • Short-circuit protection • Over temperature protection conventional product* (Monitoring IGBT chip surface) • Package compatible with the conventional product* * Conventional product: Mitsubishi Electric IPM L1 Series PM75CL1A120 Power loss comparison 1200V/400A 1200V/800A FWD_SW Tr_SW FWD_SW Tr_SW FWD_SW Tr_SW Internal circuit diagram :SiC-MOSFET :SiC-SBD Power loss comparison FWD_DC Tr_DC Full SiC Power module FWD_DC Tr_DC Full SiC Power module FWD_DC Tr_DC
Full SiC-IPM P SiC-MOSFET with current sense terminal Approx. Approx. 25% 70% Approx. Approx. Drain reduction reduction 70% 70% reduction reduction Gate U V W Power loss [W] Power loss [W] Power loss [W]
Sense Source Si-IPM Hybrid SiC-IPM Full SiC-IPM IGBT module(Si) Full SiC module IGBT module(Si) Full SiC module
N Condition:Vcc=600V, Io=31Arms (assuming a 15kW inverter), fc=15kHz, P.F=0.9, Condition:Vcc=600V, Io=110Arms (assuming a 55kW inverter), fc=15kHz, P.F=0.8, Condition:Vcc=600V, Io=222Arms (assuming a 110kW inverter), fc=15kHz, P.F=0.8, Modulation=1 ,three-phase modulation, Tj=125˚C Modulation=1 ,three-phase modulation, Tj=125˚C Modulation=1 ,three-phase modulation, Tj=125˚C
3 4 Hybrid SiC Power Modules for High-frequency 600V/50A Large Hybrid SiC DIPIPMTM for PV Application Switching Applications Sample available PSH50YA2A6 New
For optimal operation of power electronics devices that conduct high-frequency switching More efficient power modules for PV power conditioner applications Contributes to realizing highly efficient machinery that is smaller and lighter by reducing power loss and enabling higher frequencies Features Hybrid structure achieved with SiC Schottky barrier diode Features ・ and 7th-generation. IGBT chips • Power loss reduction of approx. 40% contributes to higher efficiency, smaller size ・Power loss reduction of approx. 25% compared to the conventional product* and weight reduction of total system ・Helps downsize PV inverter system thanks to modified short-circuit protection scheme • Suppresses surge voltage by reducing internal inductance *Conventional product:Mitsubishi Electric Large DIPIPMTM PS61A99 • Package compatible with the conventional product* * Conventional product: Mitsubishi Electric NFH Series IGBT Modules
FWD_SW IGBT_SW :SiC-SBD Internal circuit diagram Power loss comparison FWD_DC IGBT_DC
P VWP1 VVP1 LVIC WP LVIC VP Approx. VWPC VVPC 25% reduction
V VN1 W Power Loss [W] VN WN LVIC FO N TM TM VNC W Si DIPIPM Hybrid SiC DIPIPM N Condition：Vcc=300V, Io=25Arms, PF=0.8, fc=10kHz, Tj=125℃ FWD_SW Tr_SW CFO CIN VSC V Internal circuit diagram :SiC-SBD Power loss comparison FWD_DC Tr_DC
G2 Approx. 40% E2 reduction 1700V/1200A Hybrid SiC Power Modules for Traction Inverters CMH1200DC-34S New C2E1 E2 C1 Power loss [W]
High-power/low-loss/highly reliable modules appropriate for use in traction inverters
E1 CM600DU-24NFH CMH600DU-24NFH (Si-IGBT) (Hybrid SiC) Features Main specifications G1 Condition:Vcc=600V, Io=600Ap, fc=15kHz, P.F=0.8, Modulation=1, • Power loss reduced approximately 30% Max.operating temperature 150˚C three-phase modulation, Tj=125˚C Module compared to the conventional product* Isolation voltage 4000Vrms Collector-emitter saturation voltage 2.3V • Highly reliable design appropriate for Si-IGBT @150˚C Switching loss turn-on 140mJ use in traction 850V/1200V turn-off 390mJ Recovery waveform (FWD) Product lineup • Package compatible with the SiC-SBD Emitter-collector voltage 2.3V @150˚C Capacitive charge 9.0µC Rated Rated Circuit External size conventional product* Applications Model voltage current configuration ( D x W ) * Conventional product: Mitsubishi Electric Power Module CM1200DC-34N CMH100DY-24NFH 100A 48 × 94mm CM600DU-24NFH (Si-IGBT) FWD_SW IGBT_SW Internal circuit diagram :SiC-SBD Power loss comparison CMH150DY-24NFH 150A 48 × 94mm FWD_DC IGBT_DC
IE:100A/div CMH200DU-24NFH 200A 62 × 108mm 4 2 Industrial (E1) (C2) 1200V 2-in-1 Approx. equipment 30% CMH600DU-24NFH CMH300DU-24NFH 300A 62 × 108mm E1 C2 reduction (Hybrid SiC)
80 × 110mm G1 CMH400DU-24NFH 400A G2 200ns/div Si-IGBT Si-IGBT Power loss [W] CMH600DU-24NFH 600A 80 × 110mm C1 E2
(C1) (E2) CM1200DC-34N CMH1200DC-34S 3 1 Condition:Vcc=850V, Io=600Arms, fc=1kHz, P.F=1, Modulation=1, three-phase modulation, Tj=125˚C
5 6 Hybrid SiC Power Modules for High-frequency 600V/50A Large Hybrid SiC DIPIPMTM for PV Application Switching Applications Sample available PSH50YA2A6 New
For optimal operation of power electronics devices that conduct high-frequency switching More efficient power modules for PV power conditioner applications Contributes to realizing highly efficient machinery that is smaller and lighter by reducing power loss and enabling higher frequencies Features Hybrid structure achieved with SiC Schottky barrier diode Features ・ and 7th-generation. IGBT chips • Power loss reduction of approx. 40% contributes to higher efficiency, smaller size ・Power loss reduction of approx. 25% compared to the conventional product* and weight reduction of total system ・Helps downsize PV inverter system thanks to modified short-circuit protection scheme • Suppresses surge voltage by reducing internal inductance *Conventional product:Mitsubishi Electric Large DIPIPMTM PS61A99 • Package compatible with the conventional product* * Conventional product: Mitsubishi Electric NFH Series IGBT Modules
FWD_SW IGBT_SW :SiC-SBD Internal circuit diagram Power loss comparison FWD_DC IGBT_DC
P VWP1 VVP1 LVIC WP LVIC VP Approx. VWPC VVPC 25% reduction
V VN1 W Power Loss [W] VN WN LVIC FO N TM TM VNC W Si DIPIPM Hybrid SiC DIPIPM N Condition：Vcc=300V, Io=25Arms, PF=0.8, fc=10kHz, Tj=125℃ FWD_SW Tr_SW CFO CIN VSC V Internal circuit diagram :SiC-SBD Power loss comparison FWD_DC Tr_DC
G2 Approx. 40% E2 reduction 1700V/1200A Hybrid SiC Power Modules for Traction Inverters CMH1200DC-34S New C2E1 E2 C1 Power loss [W]
High-power/low-loss/highly reliable modules appropriate for use in traction inverters
E1 CM600DU-24NFH CMH600DU-24NFH (Si-IGBT) (Hybrid SiC) Features Main specifications G1 Condition:Vcc=600V, Io=600Ap, fc=15kHz, P.F=0.8, Modulation=1, • Power loss reduced approximately 30% Max.operating temperature 150˚C three-phase modulation, Tj=125˚C Module compared to the conventional product* Isolation voltage 4000Vrms Collector-emitter saturation voltage 2.3V • Highly reliable design appropriate for Si-IGBT @150˚C Switching loss turn-on 140mJ use in traction 850V/1200V turn-off 390mJ Recovery waveform (FWD) Product lineup • Package compatible with the SiC-SBD Emitter-collector voltage 2.3V @150˚C Capacitive charge 9.0µC Rated Rated Circuit External size conventional product* Applications Model voltage current configuration ( D x W ) * Conventional product: Mitsubishi Electric Power Module CM1200DC-34N CMH100DY-24NFH 100A 48 × 94mm CM600DU-24NFH (Si-IGBT) FWD_SW IGBT_SW Internal circuit diagram :SiC-SBD Power loss comparison CMH150DY-24NFH 150A 48 × 94mm FWD_DC IGBT_DC
IE:100A/div CMH200DU-24NFH 200A 62 × 108mm 4 2 Industrial (E1) (C2) 1200V 2-in-1 Approx. equipment 30% CMH600DU-24NFH CMH300DU-24NFH 300A 62 × 108mm E1 C2 reduction (Hybrid SiC)
80 × 110mm G1 CMH400DU-24NFH 400A G2 200ns/div Si-IGBT Si-IGBT Power loss [W] CMH600DU-24NFH 600A 80 × 110mm C1 E2
(C1) (E2) CM1200DC-34N CMH1200DC-34S 3 1 Condition:Vcc=850V, Io=600Arms, fc=1kHz, P.F=1, Modulation=1, three-phase modulation, Tj=125˚C
5 6 SiC Power Module Lineup
Unit:mm TM TM Hybrid SiC DIPPFC /Full SiC DIPPFC for Home Appliances 600V/200A Hybrid SiC-IPM 1200V/75A Hybrid/Full SiC-IPM 1200V/400A，1200V/800A for Industrial Use for Industrial Use Full SiC Power Modules PSH20L91A6-A New / PSF20L91A6-A New ＊ PMH200CS1D060 PMH75-120-Sxxx for Industrial Use PMF75-120-Sxxx＊ FMF400BX-24A 120 11 120 FMF800DX-24A 7 106 ±0.3 7 106 (3) 3.25 19.75 1616 16 15.25 2-φ 5.5 7 13 17 Utilizing SiC enables high-frequency switching and contributes to 23.79 2-2.54 10.162-2.54 10.16 2-2.54 10.16 5-2.54 19.75 6-23-23-23-2 MOUNTING HOLES (20.5) 8.5 4.06 18.8 57.15 19.05 3.5 φ
reducing the size of peripheral components 2- 5.5 12 1 4 7 10 15 3.81 3.81 MOUNTING 3.81 3.81 3.81 1.65 67.4 HOLES 121.7 50 39 5.57 9 55 110±0.5 2-R7 1 5 9 13 19 4-φ5.5 7.75 16.5 94.5 17.5 17.5 25 MOUNTING 32 41.35 39 10 HOLES 44 22 14.5 Features 7 5-M4 NUT 2.5 11.75 15 19 19 19 19 6-M5 13.5 SCREWING 10.75 NUTS 12 DEPTH 7.5 13.64 • Incorporating SiC chip in the Super mini package widely used in home appliances 32.75 23 23 23 15- 0.64 • The SiC chip allows high-frequency switching (up to 40kHz) and contributes to 1.1 ±0.5 2 62 11.6 92.3 57.5 50 3 downsizing the reactor, heat sink and other peripheral components 19- 0.5 42.7 13.64 30 28 31.2
LABEL 7 6.5
TM (SCREWING DEPTH)
• Adopts the same package as the Super mini DIPIPM to eliminate the need for a 13 31 12 3.75 (21.14)
spacer between the inverter and heat sink and to facilitate its implementation 612 6.5 21.14 22 23.72 22 6-M6 NUTS 18.49 39 39 ＊Tentative No. 6.72
Internal block diagram (Full SiC DIPPFCTM) Power loss comparison Hybrid SiC Power Modules for Hybrid SiC Power Modules for Hybrid SiC Power Modules for FWD_SW Tr_SWoff Tr_DC High-frequency Switching Applications High-frequency Switching Applications High-frequency Switching Applications :SiC-MOSFET :SiC-SBD FWD_DC Tr_SWon CMH100DY-24NFH CMH 200DU-24NFH CMH 400DU-24NFH CMH150DY-24NFH CMH 300DU-24NFH CMH 600DU-24NFH P1 108 Tc measured point 110 P2 94 ±0.25 (8.5) 93±0.25 (8.5) VD Approx. 7.5 93 7.5 17 23 23 17 14 14 14
45% (9) Vin1 reduction L1 4 6156 0.25
Vin2 ± 0.25 80 62 48 13 L2 18 ± LVIC 62 48 6 15 6
Fo 8.25 (10) 18 25.7 4
17.5 8.85 17.5 9.25 7 (22.2) Power loss [W]
CFo 18.25 12 12 12 3-M5 NUTS 25 25 21.5 2.5 (9) ±0.25 4-φ6.5 MOUTING N2 80 3-M6 NUTS 14 14 14 GND HOLES 4-φ6.5 MOUNTING HOLES 25 25 21.5 2-φ6.5MOUNTING HOLES 3-M6 NUTS Cin1 N1 Si DIPPFC™ Full SiC DIPPFC™ 4 TAB#110, Cin2 Condition:Vin=240Vrms, Vout=370V, Ic=20Arms, fc=40kHz, Tj=125˚C TAB#110, t=0.5 771616 16 t=0.5 18 187 7 18 2.8 187 18 7 18 TAB#110. t=0.5 7.5 8.5 7.5 0.5 8.5 +1 –
+1.0 –0.5 LABEL +1.0 –0.5 22 LABEL 29
29 LABEL 4 29 21.2 TM 21.2 Interleaved PFC circuit configuration (for Hybrid SiC DIPPFC ) :SiC-SBD
Hybrid SiC DIPPFC™ Large Hybrid SiC DIPIPMTM 1700V/1200A Hybrid/Full SiC DIPPFCTM P1 High-frequency drive enables for PV Application Hybrid SiC Power Modules for Home Appliances reactor sized to be reduced VD P2 PSH50YA2A6 for Tranction Inverters A = 2.54±0.3 PSH20L91A6-A / PSF20L91A6-A Vin1 L1 B = 5.08±0.3 38±0.5 CMH1200DC-34S 20x1.778(-35.56) BBB B B (2.54×10) A A 2.54±0.3 0.28 35±0.3 A A Vin2 L2 A A A B 2.8 1.778±0.2 14-0.5 130±0.5 1 4-M8 NUTS 57±0.25 57±0.25 18 1 (1) 1 12 13 18 19 29 MCU LV 3 4 6 7 9 14 15 1716 20 Fo Si-IGBT 2 5 8 1110 41 42 30 31 N2 (2.2) CFo IC Type name , Lot No. 32 ±0.1
0.5 ±0.2
2-ø4.5 20 ± AC input ±0.5 31 4 2 Type name 24 2-R1.6 ±0.5 12 ±0.25 ±0.2 Lot No. 33
GND N1 12.7 30
40 34 140 3MIN + 3 1 124 18 25 4-C1.2 To inverter part 0.28 10±0.3 10±0.3 10±0.3 10±0.3 10±0.3 10±0.3 8-0.6 2.54±0.2 PFC circuit and drive IC integrated making 70 ±0.3 14x2.54(-35.56) 79 ±0.5 it possible to reduce size including 6-M4 NUTS 16±0.2 18±0.2 6-φ7 MOUNTING 0.45 0.45 0.45 40±0.2 44±0.2 HOLES 0.45 0.2 smaller mounting area and simplified layout pattern 2.7 53±0.2 57±0.2 SCREWING SCREWING 1.8 0.8 55.2±0.3 DEPTH 2 DEPTH 11.85±0.2 0.25 MIN. 7.7 MIN. 16.5 ±0.5 14 0 +1 - ±0.2 38 5 TM TM 16 ±0.5 8
Merits of combined use of SiC DIPIPM and DIPPFC 8.6
HEAT SINK SIDE 5.5
Interleave PFC circuit in the case of discrete element configuration In the case of using TM TM SiC DIPIPM and DIPPFC configuration Terminology
SiC Silicon Carbide FWD-SW Diode switching loss High adjustment IPM Intelligent Power Module FWD-DC Diode DC loss spacer DIPIPM Dual-In-Line Package Intelligent Power Module Tr-SW Transistor switching loss
Di Tr Di Tr DIPIPMTM SiC DIPPFCTM DIPIPMTM DIPPFC Dual-In-Line Package Power Factor Correction Tr-DC Transistor DC loss PFC control and protection circuit parts SBD Schottky Barrier Diode IGBT-SW IGBT switching loss MOSFET Metal Oxide Semiconductor Field Effect Transistor IGBT-DC IGBT DC loss No need to use spacer for adjusting Integration of PFC circuit and drive IC made it possible to IGBT Insulated Gate Bipolar Transistor PV Photovoltaics Merit 1 height when attaching heat sink Merit 2 reduce the mounting area and make component more compact such as simplifying the wiring pattern Tr Transistor CSTBT Mitsubishi Electric’s unique IGBT that makes use of the carrier cumulative effect
7 8 SiC Power Module Lineup
Unit:mm TM TM Hybrid SiC DIPPFC /Full SiC DIPPFC for Home Appliances 600V/200A Hybrid SiC-IPM 1200V/75A Hybrid/Full SiC-IPM 1200V/400A，1200V/800A for Industrial Use for Industrial Use Full SiC Power Modules PSH20L91A6-A New / PSF20L91A6-A New ＊ PMH200CS1D060 PMH75-120-Sxxx for Industrial Use PMF75-120-Sxxx＊ FMF400BX-24A 120 11 120 FMF800DX-24A 7 106 ±0.3 7 106 (3) 3.25 19.75 1616 16 15.25 2-φ 5.5 7 13 17 Utilizing SiC enables high-frequency switching and contributes to 23.79 2-2.54 10.162-2.54 10.16 2-2.54 10.16 5-2.54 19.75 6-23-23-23-2 MOUNTING HOLES (20.5) 8.5 4.06 18.8 57.15 19.05 3.5 φ reducing the size of peripheral components 2- 5.5 12 1 4 7 10 15 3.81 3.81 MOUNTING 3.81 3.81 3.81 1.65 67.4 HOLES 121.7 50 39 5.57 9 55 110±0.5 2-R7 1 5 9 13 19 4-φ5.5 7.75 16.5 94.5 17.5 17.5 25 MOUNTING 32 41.35 39 10 HOLES 44 22 14.5 Features 7 5-M4 NUT 2.5 11.75 15 19 19 19 19 6-M5 13.5 SCREWING 10.75 NUTS 12 DEPTH 7.5 13.64 • Incorporating SiC chip in the Super mini package widely used in home appliances 32.75 23 23 23 15- 0.64 • The SiC chip allows high-frequency switching (up to 40kHz) and contributes to 1.1 ±0.5 2 62 11.6 92.3 57.5 50 3 downsizing the reactor, heat sink and other peripheral components 19- 0.5 42.7 13.64 30 28 31.2
LABEL 7 6.5
TM (SCREWING DEPTH)
• Adopts the same package as the Super mini DIPIPM to eliminate the need for a 13 31 12 3.75 (21.14) spacer between the inverter and heat sink and to facilitate its implementation 612 6.5 21.14 22 23.72 22 6-M6 NUTS 18.49 39 39 ＊Tentative No. 6.72
Internal block diagram (Full SiC DIPPFCTM) Power loss comparison Hybrid SiC Power Modules for Hybrid SiC Power Modules for Hybrid SiC Power Modules for FWD_SW Tr_SWoff Tr_DC High-frequency Switching Applications High-frequency Switching Applications High-frequency Switching Applications :SiC-MOSFET :SiC-SBD FWD_DC Tr_SWon CMH100DY-24NFH CMH 200DU-24NFH CMH 400DU-24NFH CMH150DY-24NFH CMH 300DU-24NFH CMH 600DU-24NFH P1 108 Tc measured point 110 P2 94 ±0.25 (8.5) 93±0.25 (8.5) VD Approx. 7.5 93 7.5 17 23 23 17 14 14 14
45% (9) Vin1 reduction L1 4 6156 0.25
Vin2 ± 0.25 80 62 48 13 L2 18 ± LVIC 62 48 6 15 6
Fo 8.25 (10) 18 25.7 4
17.5 8.85 17.5 9.25 7 (22.2) Power loss [W]
CFo 18.25 12 12 12 3-M5 NUTS 25 25 21.5 2.5 (9) ±0.25 4-φ6.5 MOUTING N2 80 3-M6 NUTS 14 14 14 GND HOLES 4-φ6.5 MOUNTING HOLES 25 25 21.5 2-φ6.5MOUNTING HOLES 3-M6 NUTS Cin1 N1 Si DIPPFC™ Full SiC DIPPFC™ 4 TAB#110, Cin2 Condition:Vin=240Vrms, Vout=370V, Ic=20Arms, fc=40kHz, Tj=125˚C TAB#110, t=0.5 771616 16 t=0.5 18 187 7 18 2.8 187 18 7 18 TAB#110. t=0.5 7.5 8.5 7.5 0.5 8.5 +1 –
+1.0 –0.5 LABEL +1.0 –0.5 22 LABEL 29
29 LABEL 4 29 21.2 TM 21.2 Interleaved PFC circuit configuration (for Hybrid SiC DIPPFC ) :SiC-SBD
Hybrid SiC DIPPFC™ Large Hybrid SiC DIPIPMTM 1700V/1200A Hybrid/Full SiC DIPPFCTM P1 High-frequency drive enables for PV Application Hybrid SiC Power Modules for Home Appliances reactor sized to be reduced VD P2 PSH50YA2A6 for Tranction Inverters A = 2.54±0.3 PSH20L91A6-A / PSF20L91A6-A Vin1 L1 B = 5.08±0.3 38±0.5 CMH1200DC-34S 20x1.778(-35.56) BBB B B (2.54×10) A A 2.54±0.3 0.28 35±0.3 A A Vin2 L2 A A A B 2.8 1.778±0.2 14-0.5 130±0.5 1 4-M8 NUTS 57±0.25 57±0.25 18 1 (1) 1 12 13 18 19 29 MCU LV 3 4 6 7 9 14 15 1716 20 Fo Si-IGBT 2 5 8 1110 41 42 30 31 N2 (2.2) CFo IC Type name , Lot No. 32 ±0.1
0.5 ±0.2
2-ø4.5 20 ± AC input ±0.5 31 4 2 Type name 24 2-R1.6 ±0.5 12 ±0.25 ±0.2 Lot No. 33
GND N1 12.7 30
40 34 140 3MIN + 3 1 124 18 25 4-C1.2 To inverter part 0.28 10±0.3 10±0.3 10±0.3 10±0.3 10±0.3 10±0.3 8-0.6 2.54±0.2 PFC circuit and drive IC integrated making 70 ±0.3 14x2.54(-35.56) 79 ±0.5 it possible to reduce size including 6-M4 NUTS 16±0.2 18±0.2 6-φ7 MOUNTING 0.45 0.45 0.45 40±0.2 44±0.2 HOLES 0.45 0.2 smaller mounting area and simplified layout pattern 2.7 53±0.2 57±0.2 SCREWING SCREWING 1.8 0.8 55.2±0.3 DEPTH 2 DEPTH 11.85±0.2 0.25 MIN. 7.7 MIN. 16.5 ±0.5 14 0 +1 - ±0.2 38 5 TM TM 16 ±0.5 8
Merits of combined use of SiC DIPIPM and DIPPFC 8.6
HEAT SINK SIDE 5.5
Interleave PFC circuit in the case of discrete element configuration In the case of using TM TM SiC DIPIPM and DIPPFC configuration Terminology
SiC Silicon Carbide FWD-SW Diode switching loss High adjustment IPM Intelligent Power Module FWD-DC Diode DC loss spacer DIPIPM Dual-In-Line Package Intelligent Power Module Tr-SW Transistor switching loss
Di Tr Di Tr DIPIPMTM SiC DIPPFCTM DIPIPMTM DIPPFC Dual-In-Line Package Power Factor Correction Tr-DC Transistor DC loss PFC control and protection circuit parts SBD Schottky Barrier Diode IGBT-SW IGBT switching loss MOSFET Metal Oxide Semiconductor Field Effect Transistor IGBT-DC IGBT DC loss No need to use spacer for adjusting Integration of PFC circuit and drive IC made it possible to IGBT Insulated Gate Bipolar Transistor PV Photovoltaics Merit 1 height when attaching heat sink Merit 2 reduce the mounting area and make component more compact such as simplifying the wiring pattern Tr Transistor CSTBT Mitsubishi Electric’s unique IGBT that makes use of the carrier cumulative effect
7 8 Contributing to the realization Development of Mitsubishi Electric SiC Power Devices of a low-carbon society and and Power Electronics Equipment Incorporating Them 2014 May 2014 February 2014 Began shipping samples more affluent lifestyles Mitsubishi Electric began developing SiC as a new material in the early 1990s. Pursuing special characteristics, Developed EV motor of hybrid SiC power modules drive system with ＊2 for high-frequency we succeeded in developing various elemental technologies. built-in SiC inverter switching applications In 2010, we commercialized the first air conditioner in the world equipped with a SiC power device. Furthermore, substantial energy-saving effects have been achieved for traction and FA machinery. We will continue to provide competitive SiC power modules with advanced development and achievements from now on.
2011 January 2011 November 2014 Verified highest power Launch Large Hybrid SiC DIPIPMTM ＊1 conversion efficiency for solar for PV Application 2010 power generation system January 2010 power conditioner Developed large-capacity (domestic industry) power module equipped with SiC diode 2015 January 2015 Launched power conditioner for PV equipped Early s with full SiC-IPM 1990 October 2011 Developed new material, Commercialized SiC inverter silicon-carbide (SiC) power for use in railcars semiconductor, maintaining a lead over other companies October 2010 Launched "Kirigamine" inverter air conditioner 2000s Various elemental technologies developed 2013 February 2013 February 2013 Developed technologies Developed SiC for to increase capacities of application in elevator SiC power modules＊2 control systems＊2
May 2013 December 2013 July 2012 March 2013 Launched SiC power January2006 2006 2012 Launched railcar traction inverter Delivered auxiliary power Successfully developed 2009 March 2012 Began shipping samples modules with full SiC power module February 2009 supply systems for railcars SiC inverter for driving motor Verified 11kW SiC inverter, Developed motor system of hybrid SiC ＊2 rated at 3.7kW world's highest value＊1 with with built-in SiC inverter power modules approx. 70% reduction in power loss
September 2012 December 2012 November 2009 Verified built-in main circuit Launched CNC drive unit Verified 20kW SiC inverter, system for railcars equipped with SiC power module world's highest value＊1 with approx. 90% reduction in power loss
Development of these modules and applications has been partially supported by Japan's Ministry of Economy, Trade and Industry (METI) ＊1 Researched on press releases by Mitsubishi Electric. ＊2 Currently under development, as of May 2015. 9 and New Energy and Industrial Technology Development Organization (NEDO). * The year and month listed are based on press releases or information released during the product launch month in Japan. 10 Contributing to the realization Development of Mitsubishi Electric SiC Power Devices of a low-carbon society and and Power Electronics Equipment Incorporating Them 2014 May 2014 February 2014 Began shipping samples more affluent lifestyles Mitsubishi Electric began developing SiC as a new material in the early 1990s. Pursuing special characteristics, Developed EV motor of hybrid SiC power modules drive system with ＊2 for high-frequency we succeeded in developing various elemental technologies. built-in SiC inverter switching applications In 2010, we commercialized the first air conditioner in the world equipped with a SiC power device. Furthermore, substantial energy-saving effects have been achieved for traction and FA machinery. We will continue to provide competitive SiC power modules with advanced development and achievements from now on.
2011 January 2011 November 2014 Verified highest power Launch Large Hybrid SiC DIPIPMTM ＊1 conversion efficiency for solar for PV Application 2010 power generation system January 2010 power conditioner Developed large-capacity (domestic industry) power module equipped with SiC diode 2015 January 2015 Launched power conditioner for PV equipped Early s with full SiC-IPM 1990 October 2011 Developed new material, Commercialized SiC inverter silicon-carbide (SiC) power for use in railcars semiconductor, maintaining a lead over other companies October 2010 Launched "Kirigamine" inverter air conditioner 2000s Various elemental technologies developed 2013 February 2013 February 2013 Developed technologies Developed SiC for to increase capacities of application in elevator SiC power modules＊2 control systems＊2
May 2013 December 2013 July 2012 March 2013 Launched SiC power January2006 2006 2012 Launched railcar traction inverter Delivered auxiliary power Successfully developed 2009 March 2012 Began shipping samples modules with full SiC power module February 2009 supply systems for railcars SiC inverter for driving motor Verified 11kW SiC inverter, Developed motor system of hybrid SiC ＊2 rated at 3.7kW world's highest value＊1 with with built-in SiC inverter power modules approx. 70% reduction in power loss
September 2012 December 2012 November 2009 Verified built-in main circuit Launched CNC drive unit Verified 20kW SiC inverter, system for railcars equipped with SiC power module world's highest value＊1 with approx. 90% reduction in power loss
Development of these modules and applications has been partially supported by Japan's Ministry of Economy, Trade and Industry (METI) ＊1 Researched on press releases by Mitsubishi Electric. ＊2 Currently under development, as of May 2015. 9 and New Energy and Industrial Technology Development Organization (NEDO). * The year and month listed are based on press releases or information released during the product launch month in Japan. 10 SiC POWER MODULES
SiC POWER MODULES
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Revised publication, effective May 2015. Superseding publication of HG-802B Sep. 2014. Specifications subject to change without notice. HG-802B 2015