Power Semiconductors for Power Electronics Applications

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Power Semiconductors for Power Electronics Applications Munaf Rahimo, Corporate Executive Engineer Grid Systems R&D, Power Systems ABB Switzerland Ltd, Semiconductors CAS-PSI Special course Power Converters, Baden Switzerland, 8th May 2014

§ Power Electronics and Power Semiconductors

§ Understanding the Basics

§ Technologies and Performance

§ Packaging Concepts

§ Technology Drivers and Trends

§ Wide Band gap Technologies

§ Conclusions

FWD1 S1 S3 S5

VDC

S2 S4 S6

© ABB Group May 16, 2014 | Slide 3 Power Electronics Applications are …. .. an established technology that bridges the power industry with its needs for flexible and fast controllers DC Transportation AC AC = = M Grid Systems ~ ~

104 HVDC Traction FACTS 103 Power Motor Industrial Drives Supply Drive 102

DeviceCurrent [A] HP 101 Automotive

DC → AC Lighting AC → DC AC(V , , ) AC(V , , ) 100 1 ω1 ϕ1 → 2 ω2 ϕ2 DC(V1) → DC(V2) 1 2 3 4 10 10 10 10 PE conversion employ controllable solid-state switches referred to as Power Semiconductors Device Blocking Voltage [V] © ABB Group May 16, 2014 | Slide 4 Power Electronics Application Trends

§ Traditional: More Compact and Powerful Systems

§ Modern: Better Quality and Reliability

§ Efficient: Lower Losses

§ Custom: Niche and Special Applications

§ Solid State: DC Breakers, Transformers

§ Environmental: Renewable Energy Sources, Electric/Hybrid Cars

Sub-module section System Valve PIN

Wafer Module IGBT

1947: Bell`s Transistor Today: GW IGBT based HVDC systems

§ It took close to two decades after the invention of the solid-state bipolar transistor (1947) for semiconductors to hit mainstream applications

§ The beginnings of power semiconductors came at a similar time with the integrated circuit in the fifties

§ Both lead to the modern era of advanced DATA Kilby`s first IC in 1958 and POWER processing

§ While the main target for ICs is increasing the speed of data processing, for power devices it was the controlled power handling capability

§ Since the 1970s, power semiconductors have benefited from advanced Silicon material and technologies/ processes developed for the much larger and well funded IC applications and markets Robert N. Hall (left) at GE demonstrated the first 200V/35A Ge power diode in 1952

Current flow direction

Switches Rectifiers (MOSFET, IGBT, Thyistor) (Diodes)

Logic Device High Power Device

§ Main Functions of the power device: Switch § Support the off-voltage (Thousands of Volts)

§ Conduct currents when switch is on (Hundreds of Amps per cm2)

Si Power Devices

BiPolar BiMOS UniPolar

Thyristors IGBT MOSFET GTO/IGCT BJT JFET (Lat. & Ver.) (Lat. & Ver.) Triac

§ Current drive § Current drive § Voltage drive § Voltage drive § Voltage drive § up to 10kV § up to 2kV § up to 6.5kV § few 100V § up to 1.2kV

PIN Diode SB Diode

§ up to 13kV § few 100V © ABB Group May 16, 2014 | Slide 11 Evolution of Silicon Based Power Devices

PCT/Diode Bipolar evolving Technologies GTO IGCT evolving

BJT

MOSFET evolving

MOS IGBT Technologies evolving

Ge → Si

1960 1970 1980 1990 2000 2010

§ Silicon is the second most common chemical element in the crust of the earth (27.7% vs. 46.6% of Oxygen)

§ Stones and sand are mostly consisting of Silicon

and Oxygen (SiO2)

§ For Semiconductors, we need an almost perfect Silicon crystal

§ Silicon crystals for semiconductor applications are probably the best organized structures on earth

§ Before the fabrication of chips, the semiconductor wafer is doped with minute amounts of foreign atoms (p “B, Al” or n “P, As” type doping)

§ It takes basically the same technologies to manufacture power semiconductors like modern logic devices like microprocessors

§ But the challenges are different in terms of Device Physics and Application

Critical Min. doping Max. Process Device Dimension concentration Temperature*

1050 - 1100°C Logic Devices 0.1 - 0.2 µm 1015 cm-3 (minutes) 1250°C MOSFET, IGBT 1 - 2 µm 1013 - 1014 cm-3 (hours)

Thyristor, GTO, IGCT 10 -20 µm < 1013 cm-3 1280-1300°C(days) melts at 1360°C

§ Doping and thickness of the silicon must be tightly controlled (both in % range)

§ Because silicon is a resistor, device thickness must be kept at absolute minimum

§ Virtually no defects or contamination with foreign atoms are permitted

… without diving into semiconductor physics …

1.50

1.00

0.50 0.00

ionising radiation0.50

1.00 1.50 - - - 20 15 10 10 15 20 - 5 electron “knocked out of orbit” 0 5 E = energy of electron

conduction band 0

band gap 0.5

allowable valance band energy levels 1 nucleus 1.5

core band 2 r = distance from nucleus 2.5 + + + + + + + + +

Si Si

− − − − Conduction Band Conduction Band Conduction Band

− − − Si Si Si Si

− − −

−

− Valence Band Band Gap −

− Valence Band − − − Si Si Si Si

− − − Valence Band − −

− −

Si Si Metal Semiconductor Insulator (ρ ≈ 10-6 Ω-cm) (ρ ≈ 102…6 Ω-cm) (ρ ≈ 1016 Ω-cm)

Power Semiconductors, S. Linder, EPFL Press ISBN 2-940222-09-6

© ABB Group May 16, 2014 | Slide 16 The Basic Building Block; The PN Junction electric field p-type n-type − − − − − − − − − − − − − − − − + + + + + + + + − − − − − − − − Anode − − − − − − − − + + + + + + + Cathode − − − − − − − − + + + + + + + + − − − − − − − −

junction

+ donors − acceptors holes electrons EC

No Bias EF

EV Forward Bias e P(+)N(-) Space-charge region abolished and a current starts to flow if the external voltage exceeds the “built- h in” voltage ~ 0.7 V Reverse Bias P(-)N(+) Space-charge region expands and avalanche break-down voltage is reached at critical electric field for Si 5 (2x10 V/cm) © ABB Group May 16, 2014 | Slide 17 The PIN Bipolar Power Diode The low doped drift (base) region is the main differentiator for power devices (normally n-type)

Poisson’s Equation for Electric Field

Charge Density

Permittivity

ρ = q (p – n + ND – NA)

0.000005

Vpt 0.000004 Vbd

0.000003

Current (Amp) 0.000002

I s 0.000001

0 0 100 200 300 400 500 600 700 800 900 1000 1100 1200 Voltage (Volt)

13 −3/4 Non - Punch Through Breakdown Voltage Vbd = 5.34 ×10 ND −12 Vpt = 7.67 ×10 NDWB Punch Through Voltage

• All the constants on the right hand side of the above equations have units which will result in a final unit in (Volts).

1.0E+19 2.1E+05

1.0E+18 1.8E+05

1.0E+17 1.5E+05

1.0E+16 1.2E+05

1.0E+15 9.0E+04

1.0E+14 6.0E+04 Electric Field [V/cm] Field Electric VR=100V

Carrier ConcentrationCarrier[cm-3] 1.0E+13 3.0E+04 Electric Field 1.0E+12 0.0E+00 0 100 200 300 400 500 600 depth [um]

1.0E+19 2.1E+05

1.0E+18 1.8E+05

1.0E+17 1.5E+05

1.0E+16 1.2E+05

1.0E+15 9.0E+04

1.0E+14 VR=1000V 6.0E+04 Electric Field [V/cm] Field Electric

Carrier ConcentrationCarrier[cm-3] 1.0E+13 3.0E+04 Electric Field 1.0E+12 0.0E+00 0 100 200 300 400 500 600 depth [um]

1.0E+19 2.1E+05

1.0E+18 1.8E+05

1.0E+17 1.5E+05

1.0E+16 1.2E+05

1.0E+15 VR=2000V 9.0E+04

1.0E+14 Electric Field 6.0E+04 Electric Field [V/cm] Field Electric

Carrier ConcentrationCarrier[cm-3] 1.0E+13 3.0E+04

1.0E+12 0.0E+00 0 100 200 300 400 500 600 depth [um]

1.0E+19 2.1E+05

1.0E+18 1.8E+05

1.0E+17 1.5E+05

1.0E+16 VR=4000V 1.2E+05

1.0E+15 Electric Field 9.0E+04

1.0E+14 6.0E+04 Electric Field [V/cm] Field Electric

Carrier ConcentrationCarrier[cm-3] 1.0E+13 3.0E+04

1.0E+12 0.0E+00 0 100 200 300 400 500 600 depth [um]

1.0E+19 2.1E+05

1.0E+18 VR=7400V 1.8E+05 IR=1A 1.0E+17 1.5E+05 Electric Field

1.0E+16 1.2E+05

1.0E+15 9.0E+04

1.0E+14 6.0E+04 Electric Field [V/cm] Field Electric

Carrier ConcentrationCarrier[cm-3] 1.0E+13 3.0E+04

1.0E+12 0.0E+00 0 100 200 300 400 500 600 depth [um]

5000

4500

4000 Vf = Vpn +VB +Vnn 3500

3000

2500

Current (Amp) Current 2000

1500 Vo 1/Ron 1000

500

0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 Voltage (Volt)

2kT WB 2 VB = ( ) Base (Drift) Region Voltage Drop q 2La

1.0E+19 Cathode 1.0E+18 Anode 1.0E+17 e-

1.0E+16 h+ 1.0E+15

1.0E+14

Carrier Concentration [cm-3] 1.0E+13

1.0E+12 0 100 200 300 400 500 600 depth [um]

IF [A] 40 30 1.0E+19 20 eDensity 10 hDensity 0 1.0E+18 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 DopingConcentration VF [V] 1.0E+17

1.0E+16

1.0E+15

1.0E+14

Carrier Concentration [cm-3] 1.0E+13

1.0E+12 0 100 200 300 400 500 600 depth [um]

IF [A] 40 30 1.0E+19 20 eDensity 10 0 1.0E+18 hDensity 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 DopingConcentration VF [V] 1.0E+17

1.0E+16

1.0E+15

1.0E+14

Carrier Concentration [cm-3] 1.0E+13

1.0E+12 0 100 200 300 400 500 600 depth [um]

IF [A] 40 30 1.0E+19 20 eDensity 10 hDensity 0 1.0E+18 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 DopingConcentration VF [V] 1.0E+17

1.0E+16

1.0E+15

1.0E+14

Carrier Concentration [cm-3] 1.0E+13

1.0E+12 0 100 200 300 400 500 600 depth [um]

IF [A] 40 1.0E+19 30 20 eDensity 10 hDensity 0 1.0E+18 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 DopingConcentration VF [V] 1.0E+17

1.0E+16

1.0E+15

1.0E+14

Carrier Concentration [cm-3] 1.0E+13

1.0E+12 0 100 200 300 400 500 600 depth [um]

§ Reverse Recovery: Transition from the conducting to the blocking state Stray Inductance

VDC inductive Diode load (2800V)

IGBT

1E+19 3.5E+05

1E+18 3.0E+05 Anode Cathode 1E+17 2.5E+05

1E+16 2.0E+05

1E+15 1.5E+05 E-Field [V/cm] E-Field 1E+14 1.0E+05 concentration [cm-3]concentration

1E+13 5.0E+04

1E+12 0.0E+00 0 100 200 300 400 500 600 depth [um]

1E+19 3.5E+05

1E+18 3.0E+05

1E+17 2.5E+05

1E+16 2.0E+05

1E+15 1.5E+05 E-Field [V/cm] E-Field 1E+14 1.0E+05 concentration [cm-3]concentration

1E+13 5.0E+04

1E+12 0.0E+00 0 100 200 300 400 500 600 depth [um]

1E+19 3.5E+05

1E+18 3.0E+05

1E+17 2.5E+05

1E+16 2.0E+05

1E+15 1.5E+05 E-Field [V/cm] E-Field 1E+14 1.0E+05 concentration [cm-3]concentration

1E+13 5.0E+04

1E+12 0.0E+00 0 100 200 300 400 500 600 depth [um]

1E+19 3.5E+05

1E+18 3.0E+05

1E+17 2.5E+05

1E+16 2.0E+05

1E+15 1.5E+05 E-Field [V/cm] E-Field 1E+14 1.0E+05 concentration [cm-3]concentration

1E+13 5.0E+04

1E+12 0.0E+00 0 100 200 300 400 500 600 depth [um]

1E+19 3.5E+05

1E+18 3.0E+05

1E+17 2.5E+05

1E+16 2.0E+05

1E+15 1.5E+05 E-Field [V/cm] E-Field 1E+14 1.0E+05 concentration [cm-3]concentration

1E+13 5.0E+04

1E+12 0.0E+00 0 100 200 300 400 500 600 depth [um]

§ Recombination Lifetime: Average value of time (ns - us) after which free carriers recombine (= disappear).

§ Lifetime Control: Controlled introduction of lattice defects è enhanced carrier recombination è shaping of the carrier distribution

ON-state Carrier Distribution

without lifetime control

CONCENTRATION with local lifetime control

DEPTH

© ABB Group May 16, 2014 | Slide 37 Power Diode Operational Modes I I • Reverse Blocking State 25C 125C Vbd • Stable reverse blocking +ve Temp. Co. Vpt • Low leakage current 125C Is IF • Forward Conducting State 25C -ve Temp. Co.

• Low on-state losses Vf V V Forward Characteristics Reverse Characteristics • Positive temperature coefficient • Turn-On (forward recovery) • Low turn-on losses

• Short turn-on time Vpf IF IF Current trr • Good controllability dv/dt dir/dt di/dt VR • Turn-Off (reverse recovery) V dif/dt Voltage f Qrr Voltage • Low turn-off losses Current Vpr Ipr t F • Short turn-off time time time • Soft characteristics Forward Recovery Reverse Recovery • Dynamic ruggedness

1000s of volts 10s of volts PCT IGBT MOSFET Today`s 108 evolving Silicon based

PCT IGCT devices 106

GTO / GCT BJT 104 IGBT and the companion Diode Conversion Power [W] MOSFET 2 In red are devices 10 that are in “design-in life” 101 102 103 104 Conversion Frequency [Hz]

Technology Device Character Control Type

Bipolar (Thyristor) Low on-state losses Current Controlled Thyristor, GTO, GCT High Turn-off losses (“High” control power)

Bipolar (Transistor) Medium on-state losses Current Controlled (“High” control power) BJT, Darlington Medium Turn-off losses

BiMOS (Transistor) Medium on-state losses Voltage Controlled Medium Turn-off losses (Low control power) IGBT

Unipolar (Transistor) High on-state losses Voltage Controlled (Low control power) MOSFET, JFET Low Turn-off losses

p n- p n PCT/IGCT Anode Cathode Gate

n- p n p IGBT Cathode Hole Drainage

Plasma in IGCT for low losses

n p Plasma in IGBT p Concentration n- • PCTs & IGCTs: optimum carrier distribution for lowest losses • IGBTs: continue to improve the carrier distribution for low losses

Pheat Tj IGBT chip Tj

Rthjc Insulation and baseplate

Rthcs Rthja Heatsink

Rthsa

ambient Ta

© ABB Group Total IGBT Losses : P = P + P + P May 16, 2014 | Slide 44 tot cond turn-off turn-on Performance Requirements for Power Devices (technology curve: traditional focus) § Power Density Handling Capability:

§ Low on-state and switching losses

§ High operating temperatures

§ Low thermal resistance

§ Controllable and Soft Switching:

§ Good turn-on controllability

§ Soft and controllable turn-off and low EMI

§ Ruggedness and Reliability:

§ High turn-off current capability

§ Robust short circuit mode for IGBTs

§ Good surge current capability § Good current / voltage sharing for paralleled / series devices

§ Stable blocking behaviour and low leakage current

§ Low “Failure In Time” FIT rates

§ Compact, powerful and reliable packaging

VDWM VDRM VDSM

VDPM

VRPM VRWM VRRM VRSM

• VDRM – Maximum Direct Repetitive Voltage

• VRRM – Maximum Reverse Repetitive Voltage

• VDPM – Maximum Direct Permanent Voltage

• VRPM – Maximum Reverse Permanent Voltage

• VDSM – Maximum Direct Surge Voltage

• VRSM – Maximum Reverse Surge Voltage

• VDWM – Maximum Direct Working Voltage 6.5kV IGBT FIT rates due to cosmic rays

§ Interaction of primary cosmics with magnetic field of earth “Cosmics are more focused to the magnetic poles”

§ Interaction with earth atmosphere:

§ Cascade of secondary, tertiary … particles in the upper atmosphere Terrestrial secondary cosmics cosmics § Increase of particle density primary cosmic particle § Cosmic flux dependence of altitude earth

§ Terrestrial cosmic particle species:

§ muons, neutrons, protons, electrons, pions atmosphere § Typical terrestrial cosmic flux at sea level: 20 neutrons per cm2 and h

p n

- +

• Failures due to cosmic under blocking condition without precursor • Statistical process and Sudden single event burnout

Anode Cathode

Metal source contact Passivation Metal source contact Passivation N+ P+ Diffusions Bevel Guard rings N - Base (High Si Resistivity) N - Base (High Si Resistivity) P+ P+ N+ Moly

Planar technology Conventional technology

cut plane

IGBT cell approx. 100’000 per cm2

Emitter

Switch „OFF“: No mobile carriers (electrons or holes) in substrate. No current flow.

Collector How an IGBT Conducts (2/5)

Emitter

3.3kV IGBT output IV curves Turn-on: Application of a positive voltage between Gate and Emitter

Collector How an IGBT Conducts (3/5)

Emitter Current flow

The emitter supplies electrons + through the lock into the substrate.

The anode reacts by supplying holes into the substrate

A MOSFET has only N+ region, so no holes are supplied and the device Collector operates in Unipolar mode Current flow How an IGBT Conducts (4/5)

Emitter Current flow

Electrons and holes are flowing towards each other (Drift and diffusion)

Collector Current flow How an IGBT Conducts (5/5)

Emitter Current flow Electrons and holes are mixing to constitute a quasi-neutral plasma. With plenty of mobile carriers, + current can flow freely and the device is conducting (switch on)

Collector Current flow 3.3kV IGBT doping/plasma 3.3kV IGBT Switching Performance: Test Circuit Stray Inductance

VDC inductive Diode load (1800V)

IGBT Plasma extraction during turn-off (1/5)

1E+18 3.0E+05 Cathode (MOS-side) 1E+17 2.5E+05 Anode 1E+16 2.0E+05 plasma, e ≈ h

1E+15 1.5E+05 Buffer

1E+14 1.0E+05 [V/cm] E-Field

concentration [cm-3]concentration N-Base (Substrate) 1E+13 5.0E+04

1E+12 0.0E+00 0 50 100 150 200 250 300 350 400 depth [um] Plasma extraction during turn-off (2/5)

1E+18 2.5E+05

1E+17 2.0E+05

1E+16 1.5E+05 1E+15 1.0E+05

1E+14 [V/cm] E-Field concentration [cm-3]concentration 5.0E+04 1E+13

1E+12 0.0E+00 0 50 100 150 200 250 300 350 400 depth [um] Plasma extraction during turn-off (3/5)

1E+18 3.0E+05

1E+17 2.5E+05

1E+16 2.0E+05

1E+15 1.5E+05

1E+14 1.0E+05 [V/cm] E-Field concentration [cm-3]concentration

1E+13 5.0E+04

1E+12 0.0E+00 0 50 100 150 200 250 300 350 400 depth [um] Plasma extraction during turn-off (4/5)

1E+18 3.0E+05

1E+17 2.5E+05

1E+16 2.0E+05

1E+15 1.5E+05

1E+14 1.0E+05 [V/cm] E-Field concentration [cm-3]concentration

1E+13 5.0E+04

1E+12 0.0E+00 0 50 100 150 200 250 300 350 400 depth [um] Plasma extraction during turn-off (5/5)

1E+18 3.0E+05

1E+17 2.5E+05

1E+16 2.0E+05

1E+15 1.5E+05

1E+14 1.0E+05 [V/cm] E-Field concentration [cm-3]concentration

1E+13 5.0E+04

1E+12 0.0E+00 0 50 100 150 200 250 300 350 400 depth [um] 3.3kV IGBT Turn-on and Short Circuit Waveforms

IC=62.5A, VDC=1800V 250 2400

200 2000

150 1600

Turn-on 100 1200 Voltage [V] Current [A], 50 800

waveforms Gate-Voltage [V] Collector-Emitter

0 400

-50 0 1.0 2.0 3.0 4.0 5.0 6.0 time [us]

VGE=15.0V, VDC=1800V 450 2500 400 2250 350 2000 300 1750 250 1500 Short 200 1250 150 1000 Voltage [V] Current [A],

Circuit Gate-Voltage [V] 100 750 Collector-Emitter 50 500 0 250 -50 0 5.0 10.0 15.0 20.0 25.0 30.0 35.0 time [us] Power Semiconductors Packaging Concepts

• What is Packaging ? • A package is an enclosure for a single element, an integrated circuit or a hybrid circuit. It provides hermetic or non-hermetic protection, determines the form factor, and serves as the first level interconnection externally for the device by means of package terminals. [Electronic Materials Handbook]

copper plastic housing • Package functions in PE terminal

epoxy

• Power and Signal distribution bond wires metalization

chip gel • Heat dissipation solder substrate base plate • HV insulation

• Protection Power Semiconductor Device Packaging Concepts

“Insulated” Devices Press-Pack Devices

Mounting heat sink galvanically insulated heat sinks under high voltage from power terminals

n all devices of a system can be n every device needs its own mounted on same heat sink heat sink

Failure Mode open circuit after failure fails into low impedance state

Markets Industry Industry Transportation Transportation T&D T&D Power range typically 100 kW - low MW MW transportation components have higher reliability demands Insulated Package for 10s to 100s of KW

Low to Medium Power Semiconductor Packages

Discrete Devices Standard Modules Insulated Modules

• Used for industrial and transportation applications (typ. 100 kW - 3 MW) • Insulated packages are suited for Multi Chip packaging IGBTs

package with semiconductors inside (bolted to heat sink)

power & control terminals heat sink (water or air cooled) Press-Pack Modules

power terminals current flow (top and bottom of module) package with semiconductors inside

heat sink (water or air cooled)

control terminal Power Semiconductors Technology Drivers and Trends

junction termination substrate (silicon) (“isolation of active area”)

© ABB Group May 16, 2014 | Slide 69 Power Semiconductor Package Technology Platforms Heat dissipation Electrical distribution • Interconnections • Interconnections • Advanced cooling concepts • Power / Signal terminals

Pheat Tj IGBT chip Tj • Low electrical parasitics

Rthjc Insulation and baseplate

Rthcs Rthja Heatsink

Rthsa

ambient Ta Typical temperature cycling curve 1.E+8 High Voltage Insulation 1.E+7 Encapsulation/ protection smaller size, lower complexity • Partial Discharges 1.E+6 • Hermetic / non-hermetic • HV insulating 1.E+5 1.E+4 • Coating / filling materials

• Creepage distances 1.E+3 Nº of cycles of Nº 1.E+2

1.E+1 greater size, higher complexity

1.E+0

1.E-1 10 Junction temperature excursion (ºC) 100 Powerful, Reliable, Compact, Application specific

Von Tj,max – Tj,amb Power = Von Ic or = Ron Rth

The Margins

Pmax = Vmax.Imax, Controllability, Reliability

The Application Topology, Frequency, Control, Cooling

The Cost of Performance © ABB Group May 16, 2014 | Slide 71 Technology Drivers for Higher Power (the boundaries) Larger Area Integration I I Area Larger Devices Termination/Active Integration HV, RC, RB Extra Paralleling

New Tech.

Reduced Losses Absolute Increased Margins Carrier Enhancement Increasing Device Power Latch-up / Filament Protection Thickness Reduction (Blocking) Density Controllability, Softness & Scale

V.I V .I New Technologies max max Losses SOA

ΔT/Rth Temperature Traditional Focus Improved Thermal High Temp. Operation

IGBT Turn-off Diode Reverse Recovery

ABB SiC 4.5kV PIN Diodes for HVDC (1999)

Band-gap Eg eV 1.12 3.26 3.39 5.47

Critical Field Ecrit MV/cm 0.23 2.2 3.3 5.6

Permitivity εr – 11.8 9.7 9.0 5.7 2 Electron Mobility µn cm /V·s 1400 950 800/1700* 1800 3 BFoM: εr·µn·Ecrit rel. to Si 1 500 1300/2700* 9000 -3 10 -9 -10 -22 Intrinsic Conc. ni cm 1.4·10 8.2·10 1.9·10 1·10 Thermal Cond. λ W/cm·K 1.5 3.8 1.3/3** 20

* significant difference between bulk and 2DEG ** difference between epi and bulk

§ Higher Blocking § Higher Power § Lower Losses § Wider Frequency Range § Lower Leakage § Very High Voltages § But higher built-in voltage § Higher Temperature

§ Defect Issues SiC Power Devices § High Cost

BiPolar BiMOS UniPolar

Thyristors BJT IGBT JFET MOSFET 5kV~…. 600V~10kV 5kV~…. 600V~10kV 600V~10kV

§ MOS Issues § Bipolar Issues § Bipolar Issues § Bipolar Issues § Normally on § MOS Issues § Bias Voltage § Current Drive § Bias Voltage

Diode Diode 5kV ~ …. 600V~5kV

§ Bipolar Issues

1700V Fast IGBTs with SiC Diodes during turn-on

Si diode

SiC diodes

§ Si Based Power semiconductors are a key enabler for modern and future power electronics systems including grid systems

§ High power semiconductors devices and new system topologies are continuously improving for achieving higher power, improved efficiency and reliability and better controllability

§ The Diode, PCT, IGCT, IGBT and MOSFET continue to evolve for achieving future system targets with the potential for improved power/performance through further losses reductions, higher operating temperatures and integration solutions

§ Wide Band Gap Based Power Devices offer many performance advantages with strong potential for very high voltage applications