DOCSLIB.ORG

Single Phase Controlled Rectifiers

Total Page：16

File Type：pdf, Size：1020Kb

Download full-text PDF Read full-text
Single Phase Controlled Rectifiers Power Electronics Single Phase Controlled Rectifiers Dr. Firas Obeidat 1 Table of contents • Single Phase Controlled Half Wave Rectifier- Resistive Load 1 • Single Phase Controlled Half Wave Rectifier- RL Load 2 •Single Phase Full Wave Rectifier- Resistive Load 3 • Single Phase Full Wave Rectifier- RL Load, Discontinuous 4 Current • Single Phase Full Wave Rectifier- RL Load, Continuous Current 5 • Single Phase Full Wave Rectifier- RL Load, L>>R 6 • Single-Phase Bridge Half-Controlled Rectifier 6 2 Dr. Firas Obeidat Faculty of Engineering Philadelphia University Single Phase Controlled Half Wave Rectifier Resistive Load A way to control the output of a half- wave rectifier is to use an SCR1 instead of a diode. Two conditions must be met before the SCR can conduct: 1. The SCR must be forward-biased (vSCR > 0). 2. A current must be applied to the gate of the SCR. The SCR will not begin to conduct as soon as the source becomes positive. Conduction is delayed until a gate current is applied, which is the basis for using the SCR as a means of control. Once the SCR is conducting, the gate current can be removed and the SCR remains on until the current goes to zero. 3 Dr. Firas Obeidat Faculty of Engineering Philadelphia University Single Phase Controlled Half Wave Rectifier Resistive Load If a gate signal is applied to the SCR at 휔t=α, where α is the delay (firing or triggering) angle. The average (dc) voltage across the load resistor and the average (dc) current are Vdc= 푉푑푐 푉푚 퐼 = = (1 + 푐표푠α) 푑푐 푅 2π푅 The rms voltage across the resistor and the rms current are computed from 푉푚 1 푠푖푛2α 푉푟푚푠 푉푚 1 푠푖푛2α 푉 = (π − α + ) 퐼푟푚푠 = = (π − α + ) 푟푚푠 2 π 2 푅 2푅 π 2 2 푉푟푚푠 The power absorbed by the resistor is 푃 = 푎푐 푅 4 Dr. Firas Obeidat Faculty of Engineering Philadelphia University Single Phase Controlled Half Wave Rectifier Resistive Load Example: The single-phase half wave rectifier has a purely resistive load of R and the delay angle is α=π/2, determine: 푉푑푐, 퐼푑푐, 푉푟푚푠, 퐼푟푚푠. 푉 π 푉 = 푚 1 + 푐표푠 = 0.1592푉 푑푐 2π 2 푚 푉 π 푉 퐼 = 푚 1 + 푐표푠 = 0.1592 푚 푑푐 2π푅 2 푅 π 푉푚 1 π sin⁡(2 ) 푉 = (π − + 2 ) = 0.3536푉 푟푚푠 2 π 2 2 푚 π 푉푚 1 π sin⁡(2 ) 푉푚 퐼 = (π − + 2 ) = 0.3536 푟푚푠 2푅 π 2 2 푅 5 Dr. Firas Obeidat Faculty of Engineering Philadelphia University Single Phase Controlled Half Wave Rectifier Resistive Load Example: Design a circuit to produce an average voltage of 40V across a 100Ω load resistor from a 120Vrms 60-Hz ac source. Determine the power absorbed by the resistance and the power factor. Vdc= so Vrms 푉푟푚푠 75.6 푆 = 푉 퐼 = 120 × 0.756 = 90.72⁡푉퐴 퐼 = = = 0.756퐴 푠,푟푚푠 푟푚푠 푟푚푠 푅 100 푃푅 57.1 푝푓 = = = 0.629 푆 90.72 6 Dr. Firas Obeidat Faculty of Engineering Philadelphia University Single Phase Controlled Half Wave Rectifier RL Load The current is the sum of the forced and natural responses. The constant A is determined from the initial condition 휔t=α i(α)=0: Substituting for A and simplifying, The extinction angle 훽 is defined as the angle at which the current returns to zero, as in the case of the uncontrolled rectifier. When 휔t=훽 7 Dr. Firas Obeidat Faculty of Engineering Philadelphia University Single Phase Controlled Half Wave Rectifier RL Load The above equation must be solved numerically for 훽. The angle (훽-α) is called the conduction angle 훶. The average (dc) output voltage is Vdc= The average (dc) output voltage is 푉푚 퐼 = 퐼 = (푐표푠α − 푐표푠훽) 퐼푑푐 = or 푑푐 표 2휋푅 The rms current is computed from Or it can be written as 훽 2 1 푉푚 1 1 푉 = (푉 푠푖푛휔푡)2⁡푑휔푡 = (훽 − 훼 − 푠푖푛2훽 + 푠푖푛2훼) 푟푚푠 2휋 푚 4휋 2 2 훼 2 푉푟푚푠 푉푟푚푠 1 푉푚 1 1 퐼푟푚푠 = = = (훽 − 훼 − 푠푖푛2훽 + 푠푖푛2훼) 푍 푅2 + (휔퐿)2 푅2 + (휔퐿)2 4휋 2 2 8 Dr. Firas Obeidat Faculty of Engineering Philadelphia University Single Phase Controlled Half Wave Rectifier RL Load Example: For the circuit of controlled half-wave rectifier with RL Load, the o source is 120Vrms at 60 Hz, R=20Ω, L=0.04H, and the delay angle is 45 . Determine (a) an expression for i(휔t), (b) the rms current, (c) the power absorbed by the load, and (d) the power factor. (a) (b) (c) (c) 9 Dr. Firas Obeidat Faculty of Engineering Philadelphia University Single Phase Controlled Full Wave Rectifier The first figure shows a fully controlled bridge rectifier, which uses four thyristors to control the average load voltage. Thyristors T1 and T2 must be fired simultaneously during the positive half wave of the source voltage vs to allow conduction of current. To ensure simultaneous firing, thyristors T1 and T2 use the same firing signal. Alternatively, thyristors T3 and T4 must be fired simultaneously during the negative half wave of the source voltage. For the center-tapped transformer rectifier, T1 is forward-biased when vs is positive, and T2 is forward-biased when vs is negative, but each will not conduct until it receives a gate signal. The delay angle is the angle interval between the forward biasing of the SCR and the gate signal application. If the delay angle is zero, the rectifiers behave exactly as uncontrolled rectifiers with diodes. 10 Dr. Firas Obeidat Faculty of Engineering Philadelphia University Single Phase Controlled Full Wave Rectifier Resistive Load The average component of the output voltage and current waveforms are determined from Vdc= 푉푑푐 푉푚 퐼 = = (1 + 푐표푠훼) 푑푐 푅 휋푅 The rms component of the output voltage and current waveforms are determined from 휋 1 1 훼 sin⁡(2훼) 푉 = 푉 푠푖푛휔푡 2푑휔푡 = 푉 − + 푟푚푠 휋 푚 푚 2 2휋 4휋 훼 The rms current in 푉푟푚푠 푉푚 1 훼 sin⁡(2훼) 퐼푟푚푠 = = − + the source is 푅 푅 2 2휋 4휋 the same as The power delivered to the load is the rms current in 2 푝 = 퐼푟푚푠 푅 the load. 11 Dr. Firas Obeidat Faculty of Engineering Philadelphia University Single Phase Controlled Full Wave Rectifier Resistive Load Example: The full-wave controlled bridge rectifier has an ac input of 120Vrms at 60 Hz and a 20Ω load resistor. The delay angle is 40o. Determine the average current in the load, the power absorbed by the load, and the source voltamperes. Vdc= 푉푑푐 95.6 퐼 = = = 4.77퐴 푑푐 푅 20 The rms current in the source is also 5.80 A, and the apparent power of the source is 12 Dr. Firas Obeidat Faculty of Engineering Philadelphia University Single Phase Controlled Full Wave Rectifier RL Load, Discontinuous Current Load current for a controlled full-wave rectifier with an RL load (fig. a) can be either continuous or discontinuous. For discontinuous current 1- at 휔t=0 with zero load current, SCRs T1 and T2 in the bridge rectifier will be forward-biased and T3 and T4 will be reverse-biased as the source voltage becomes positive. 2- Gate signals are applied to T1 and T2 at 휔t=α, turning T1 and T2 on. With T1 and T2 on, the load voltage is equal to the source voltage. The output current can be given as 13 Dr. Firas Obeidat Faculty of Engineering Philadelphia University Single Phase Controlled Full Wave Rectifier RL Load, Discontinuous Current The above current function becomes zero at 휔t=훽. If , the current remains at zero until 휔t=π+α when gate signals are applied to T3 and T4 which are then forward-biased and begin to conduct. This mode of operation is called discontinuous current as shown in fig. b. 훽<π+α → Discontinuous current Analysis of the controlled full-wave rectifier operating in the discontinuous current mode is identical to that of the controlled half-wave rectifier except that the period for the output current is π rather than 2π rad. 14 Dr. Firas Obeidat Faculty of Engineering Philadelphia University Single Phase Controlled Full Wave Rectifier RL Load, Discontinuous Current The average (dc) output voltage is 훽 1 푉푚 푉 = 푉 푠푖푛휔푡⁡푑푡휔푡 = (푐표푠훼 − 푐표푠훽) 푑푐 휋 푚 휋 훼 The average (dc) output current is 푉푑푐 푉푚 퐼 = = (푐표푠α − 푐표푠훽) 퐼푑푐 = or 푑푐 푅 휋푅 The rms voltage is computed from 훽 2 1 푉푚 1 1 푉 = (푉 푠푖푛휔푡)2⁡푑휔푡 = (훽 − α − 풔풊풏ퟐ훽 + 풔풊풏ퟐα) 푟푚푠 휋 푚 2휋 2 2 α The rms current is computed from Or it can be written as 2 푉푟푚푠 푉푟푚푠 1 푉푚 1 1 퐼푟푚푠 = = = (훽 − α − 풔풊풏ퟐ훽 + 풔풊풏ퟐα) 푍 푅2 + (휔퐿)2 푅2 + (휔퐿)2 2휋 2 2 15 Dr. Firas Obeidat Faculty of Engineering Philadelphia University Single Phase Controlled Full Wave Rectifier RL Load, Discontinuous Current Example: A controlled full-wave bridge rectifier has a source of 120Vrms at 60Hz, R=10Ω, L=20mH, and α=60o. Determine (a) an expression for load current, (b) the average load current, and (c) the power absorbed by the load. (a) (b) 푉푚 169.7 퐼 = = 푐표푠α − 푐표푠훽 = 푐표푠60 − 푐표푠216 = 7.07퐴 푑푐 휋푅 휋10 (c) 2 1 푉푚 1 1 퐼푟푚푠 = (훽 − α − 풔풊풏ퟐ훽 + 풔풊풏ퟐα) 푅2 + (휔퐿)2 2휋 2 2 1 169.72 1 1 퐼 = (3.78 − 1.047 − 풔풊풏(ퟐ × 216) + 풔풊풏(ퟐ × 60)) = 8.8⁡A 푟푚푠 12.5 2휋 2 2 (d) 2 2 푝 = 퐼푟푚푠 푅 = 8.8 × 10 = 774.4⁡W 16 Dr. Firas Obeidat Faculty of Engineering Philadelphia University Single Phase Controlled Full Wave Rectifier RL Load, Continuous Current If the load current is still positive at 휔t=π+α when gate signals are applied to T3 and T4 in the above analysis, T3 and T4 are turned ON and T1 and T2 are forced OFF.
Load more

Recommended publications
  • Power Electronics
    Diodes and Transistors Semiconductors • Semiconductor devices are made of alternating layers of positively doped material (P) and negatively doped material (N). • Diodes are PN or NP, BJTs are PNP or NPN, IGBTs are PNPN. Other devices are more complex Diodes • A diode is a device which allows flow in one direction but not the other. • When conducting, the diodes create a voltage drop, kind of acting like a resistor • There are three main types of power diodes – Power Diode – Fast recovery diode – Schottky Diodes Power Diodes • Max properties: 1500V, 400A, 1kHz • Forward voltage drop of 0.7 V when on Diode circuit voltage measurements: (a) Forward biased. (b) Reverse biased. Fast Recovery Diodes • Max properties: similar to regular power diodes but recover time as low as 50ns • The following is a graph of a diode’s recovery time. trr is shorter for fast recovery diodes Schottky Diodes • Max properties: 400V, 400A • Very fast recovery time • Lower voltage drop when conducting than regular diodes • Ideal for high current low voltage applications Current vs Voltage Characteristics • All diodes have two main weaknesses – Leakage current when the diode is off. This is power loss – Voltage drop when the diode is conducting. This is directly converted to heat, i.e. power loss • Other problems to watch for: – Notice the reverse current in the recovery time graph. This can be limited through certain circuits. Ways Around Maximum Properties • To overcome maximum voltage, we can use the diodes in series. Here is a voltage sharing circuit • To overcome maximum current, we can use the diodes in parallel.
    [Show full text]
  • Thermal Assessment and In-Situ Monitoring of Insulated
    Thermal Assessment and In-Situ Monitoring of Insulated Gate Bipolar Transistors in Power Electronic Modules Preprint Erick Gutierrez,1 Kevin Lin,1 Patrick McCluskey,1 and Douglas DeVoto2 1 University of Maryland 2 National Renewable Energy Laboratory Presented at ASME 2019 International Technical Conference and Exhibition on Packaging and Integration of Electronic and Photonic Microsystems (IPACK2019) Anaheim, California October 7–9, 2019 NREL is a national laboratory of the U.S. Department of Energy Conference Paper Office of Energy Efficiency & Renewable Energy NREL/CP-5400-73583 Operated by the Alliance for Sustainable Energy, LLC February 2020 This report is available at no cost from the National Renewable Energy Laboratory (NREL) at www.nrel.gov/publications. Contract No. DE-AC36-08GO28308 Thermal Assessment and In-Situ Monitoring of Insulated Gate Bipolar Transistors in Power Electronic Modules Preprint Erick Gutierrez,1 Kevin Lin,1 Patrick McCluskey,1 and Douglas DeVoto2 1 University of Maryland 2 National Renewable Energy Laboratory Suggested Citation Gutierrez, Erick, Kevin Lin, Patrick McCluskey, and Douglas DeVoto. 2020. Thermal Assessment and In-Situ Monitoring of Insulated Gate Bipolar Transistors in Power Electronic Modules: Preprint. Golden, CO: National Renewable Energy Laboratory. NREL/CP-5400-73583 https://www.nrel.gov/docs/fy20osti/73583.pdf. NREL is a national laboratory of the U.S. Department of Energy Conference Paper Office of Energy Efficiency & Renewable Energy NREL/CP-5400-73583 Operated by the Alliance for Sustainable Energy, LLC February 2020 This report is available at no cost from the National Renewable Energy National Renewable Energy Laboratory Laboratory (NREL) at www.nrel.gov/publications.
    [Show full text]
  • Data Sheet Freemaq PCSK-Multi PCSK
    POWER ELECTRONICS 45 FREEMAQ PCSK FREEMAQ MULTI PCSK UTILITY SCALE BATTERY INVERTER POWER CONVERSION SYSTEM FRU FIELD REPLACEABLE UNITS MODULAR DESIGN UP TO 3 INDEPENDENT BESS INPUTS ICOOL 3 PROVEN HARDWARE AND ROBUST OUTDOOR DESIGN FEATURED WITH THE 4 QUADRANT LATEST CONTROL The Freemaq PCSK is a modular solution from 1700 kW 3 LEVEL TOPOLOGY to 3800 kW with configurable DC and AC voltages making it compatible with all battery technology and manufacturers. Power Electronics is a proven partner in the solar and energy NEMA 3R / IP55 storage market. The PCSK has been designed to be the lowest LCOE solution in the market for storage applications. The Power Electronics Freemaq PCSK offers proven hard- ware to meet storage and grid support challenges.The energy production industry is embracing renewable energy sources. However, high penetration creates power transmission instability challenges, thus Grid Operators require stringent dynamic and static grid support features for solar inverters and Power Conversion Systems (PCS). The MULTI PCSK can support two or three independent battery systems and optimize the storage facility. The converters can perform grid support functions such as: Peak Shaving, Ramp Rate Control, Frequency Regulation, Load Leveling and Voltage Regulation, controlled by a Power Plant Controller or SCADA. The converters stations are turn- key solutions ready for connection to the battery container and MV power distribution wiring. Units are designed for concrete pads or piers, open skids or integrated into full container solutions. POWER ELECTRONICS COMPACT DESIGN - EASY TO SERVICE By providing full front access the Freemaq PCSK series With the Freemaq PCSK, Power Electronics offers its most simplifies the maintenance tasks, reducing the MTTR (and compact solution, achieving 3.8MW in just 12ft long, reducing achieving a lower OPEX).
    [Show full text]
  • Eaton's Power Electronics Portfolio
    Eaton’s Power Electronics Portfolio • Bob Yanniello • June 27, 2017 © 2015 Eaton. All Rights Reserved.. © 2015 Eaton. All Rights Reserved.. 2 © 2015 Eaton. All Rights Reserved.. 3 © 2015 Eaton. All Rights Reserved.. 4 Power Xpert Inverter – 1.0 – 2.5 MW Inverter Throat – direct Step-up coupling Transformer Tracker (or AC) power and controls © 2015 Eaton. All Rights Reserved.. 5 Power module design • Latest generation of Semikron Skiip 4 IGBT – integrated driver & heat sink • Rated for 175°C and high cyclic duty applications • Vishay film capacitors • User replaceable modules © 2015 Eaton. All Rights Reserved.. 6 Power Xpert Utility-Scale Solar Inverter 1500Vdc – 98.5% efficiency DC Power Conversion AC Compartment Compartments Compartment Up to 21x 350A contactors with fuses AC Line Filter 3200A Main Breaker with MO and Close LOTO coupled to DC Feeders . Transformer AC Line From . Filter Combiner . boxes Open / 20A with LOTO Close AC Line Contactor Filter opens Positive and UPS Negative DC LOTO SEL Inverter poles 751 Control Relay Power © 2015 Eaton. All Rights Reserved.. 7 Power Xpert™ Energy Storage Inverter 1250 V max • Battery Types • LG Chem (LMO) • Kokam (LTO) • Enerdel (LTO) • Altair Nano (LTO) • ZBB (flow) 500kW outdoor Inverter • Xtreme (ALA) 3MW site (indoor Inverters) • Mitsubishi (LMO) • JCI (NCA) • Samsung (LMO) • SPS/Lischen • Powin • Primus 500kW Compact Pad Mount © 2015 Eaton. All Rights Reserved.. 8 Power Xpert® Energy Storage Inverter Power Xpert Inverter 60A @ 480 Inverter DC VAC connection AC Line Filter To Battery container for aux power To Transformer From Battery AC Line container Filter AC Line Filter Inverter Controls Power Inverter Controller 15A @ 3A @ 120VAC F.O.
    [Show full text]
  • LECTURE 18 Switches and Switch Stress: the Concept of Safe Operating Area for a Device
    1 LECTURE 18 Switches and Switch Stress: The Concept of Safe Operating Area for a Device I. Ideal Switch Characteristics A. Block +V with IOFF º 0 B. Pass +I with VON º 0 C. Zero switching delay and its benefits D. Power loss due to switches: zero in every way 1. DC Loss: RON = 0, VON = 0 2. Switching Loss: No delays, no device stored charge E. No stray Lp or Cp for undesired ringing! F. Real Switches 1. Limited quadrants of operation for real solid state switches a. One quadrant and device example II. Active Switch Stress (S) and Switch Utilization (U) A. General Definitions sw sw S(active) ~ V( ) Irms( ) per switch off on P(load) U º per switch S B. Case of Flyback Converter 2 V(off) ~ Vg/D’ } Dopt } for I(on) ~ I D } Umax C. Table of Umax and Dopt for various Converters The above selection of solid state switches will be matched to the I(D) through the device and the V(D) across the device as determined by detailed circuit analysis in the next few lectures. Analysis of V(D) and I(D) will follow the same procedure as M(D). 3 LECTURE 18 Switches and Switch Stress: The Concept of Safe Operating Area for a Device A. Ideal Switch Characteristics: There are five characteristics of a SPST ideal switch. You make think of a semiconductor power switch as you do of a light switch at home. It operates with no concern for losses in either the on or the off state.
    [Show full text]
  • Fundamentals of MOSFET and IGBT Gate Driver Circuits
    Application Report SLUA618A–March 2017–Revised October 2018 Fundamentals of MOSFET and IGBT Gate Driver Circuits Laszlo Balogh ABSTRACT The main purpose of this application report is to demonstrate a systematic approach to design high performance gate drive circuits for high speed switching applications. It is an informative collection of topics offering a “one-stop-shopping” to solve the most common design challenges. Therefore, it should be of interest to power electronics engineers at all levels of experience. The most popular circuit solutions and their performance are analyzed, including the effect of parasitic components, transient and extreme operating conditions. The discussion builds from simple to more complex problems starting with an overview of MOSFET technology and switching operation. Design procedure for ground referenced and high side gate drive circuits, AC coupled and transformer isolated solutions are described in great details. A special section deals with the gate drive requirements of the MOSFETs in synchronous rectifier applications. For more information, see the Overview for MOSFET and IGBT Gate Drivers product page. Several, step-by-step numerical design examples complement the application report. This document is also available in Chinese: MOSFET 和 IGBT 栅极驱动器电路的基本原理 Contents 1 Introduction ................................................................................................................... 2 2 MOSFET Technology ......................................................................................................
    [Show full text]
  • Overview of the DOE Advanced Power Electronics and Electric Motor R&D
    VEHICLE TECHNOLOGIES OFFICE Overview of the DOE Advanced Susan Rogers Power Electronics and Electric Steven Boyd Motor R&D Program Advanced Power Electronics and Electric Motors June 17, 2014 Vehicle Technologies Office 1 APEEM R&D Program Vehicle Technologies Office Hybrid Electric Systems R&D Energy Storage Vehicle Systems Advanced Power Electronics & Electric Motors (APEEM) R&D Industry Federal Agencies Academia National Labs 2 APEEM R&D Mission and Budget Develop advanced power electronics, electric motors and electric drive systems to enable large market penetration of hybrid and electric vehicles Meeting program targets will enable market success: increase performance, efficiency and reliability, while lowering cost, weight, and volume FY 2014 Budget R&D emphasis accelerates: • Adoption of wide bandgap Power Electronics semiconductors • Reduction or elimination of 29% 29% Electric Motors rare earth magnets Thermal Management FY 2014 FOAs: 7% • Power Electronics - $6M Testing & Analysis • Wide bandgap commercialization 24% 11% • Incubator - $1.6M FY 14 FOAs • “Off-Roadmap” technology R&D FY 2013 FY 2014 FY 2015 Request $27.2 M $24 M $35.5 M 3 Electric Drive System Components • Electric motor – converts electrical energy to mechanical power for motive power • Inverter – converts high voltage direct current to varying pulses that control and power the electric motor • Charger – modifies and controls electrical energy to re-energize the battery • Converter(s) – increases the battery voltage for the traction drive system and decreases
    [Show full text]
  • Power Electronics for Distributed Energy Systems and Transmission and Distribution Applications
    ORNL/TM-2005/230 POWER ELECTRONICS FOR DISTRIBUTED ENERGY SYSTEMS AND TRANSMISSION AND DISTRIBUTION APPLICATIONS L. M. Tolbert T. J. King B. Ozpineci J. B. Campbell G. Muralidharan D. T. Rizy A. S. Sabau H. Zhang* W. Zhang* Y. Xu* H. F. Huq* H. Liu* December 2005 *The University of Tennessee-Knoxville ORNL/TM-2005/230 Engineering Science and Technology Division POWER ELECTRONICS FOR DISTRIBUTED ENERGY SYSTEMS AND TRANSMISSION AND DISTRIBUTION APPLICATIONS L. M. Tolbert T. J. King B. Ozpineci J. B. Campbell G. Muralidharan D. T. Rizy A. S. Sabau H. Zhang W. Zhang Y. Xu H. F. Huq H. Liu Publication Date: December 2005 Prepared by the OAK RIDGE NATIONAL LABORATORY Oak Ridge, Tennessee 37831 managed by UT-BATTELLE, LLC for the U.S. DEPARTMENT OF ENERGY Under contract DE-AC05-00OR22725 DOCUMENT AVAILABILITY Reports produced after January 1, 1996, are generally available free via the U.S. Department of Energy (DOE) Information Bridge. Web site http://www.osti.gov/bridge Not available externally. Reports are available to DOE employees, DOE contractors, Energy Technology Data Exchange (ETDE) representatives, and International Nuclear Information System (INIS) representatives from the following source. Office of Scientific and Technical Information P.O. Box 62 Oak Ridge, TN 37831 Telephone 865-576-8401 Fax 865-576-5728 E-mail [email protected] Web site http://www.osti.gov/contact.html This report was prepared as an account of work sponsored by an agency of the United States Government. Neither the United States Government nor any agency thereof, nor any of their employees, makes any warranty, express or implied, or assumes any legal liability or responsibility for the accuracy, completeness, or usefulness of any information, apparatus, product, or process disclosed, or represents that its use would not infringe privately owned rights.
    [Show full text]
  • Data Sheet Freemaq PCSM-Multi PCSM
    POWER ELECTRONICS 21 FREEMAQ PCSM FREEMAQ MULTI PCSM UTILITY SCALE MV BATTERY INVERTER POWER CONVERSION SYSTEM FRU FIELD REPLACEABLE UNITS MODULAR DESIGN UP TO 3 INDEPENDENT BESS INPUTS THE INNOVATIVE MEDIUM VOLTAGE CENTRAL STRING ICOOL 3 BATTERY INVERTER 4 QUADRANT The Power Electronics PCSM medium voltage battery inverter is designed for utility scale storage applications, that require the advantages of a central inverter solution but also the modularity of a string architecture. The PCSM can reach 3 LEVEL TOPOLOGY up to a nominal power of 3.6 MVA and it is compatible with all battery technology and manufacturers. It also has the added advantage of having an integrated medium voltage NEMA 3R transformer and switchgear. The MULTI PCSM can support two or three independent battery systems and optimize the storage facility. Power Electronics converters have been designed to be the lowest LCOE solution in the market for storage applications. The Power Electronics Freemaq PCSM offers proven hardwa- re to meet storage and grid support challenges.The energy production industry is embracing renewable energy sources. However, high penetration creates power transmission instability challenges, thus Grid Operators require stringent dynamic and static grid support features for solar inverters and Power Conversion Systems (PCS). The converters can perform grid support functions such as: Peak Shaving, Ramp Rate Control, Frequency Regulation, Load Leveling and Voltage Regulation, controlled by a Power Plant Controller or SCADA. The Freemaq PCSM stations are turn-key solutions ready for connection to the battery contai- ner and MV power distribution wiring. Units are designed for concrete pads or piers. POWER ELECTRONICS REAL TURN-KEY SOLUTION - EASY TO SERVICE With the PCSM, Power Electronics offers a real turn-key By providing full front access the PCSM series simplifies solution, including the MV transformer and switchgear fully the maintenance tasks, reducing the MTTR (and achieving assembled and tested at the factory.
    [Show full text]
  • Lecture Notes on Power Electronics Subject Code – BEE1602
    VEER SURENDRA SAI UNIVERSITY OF TECHNOLOGY BURLA, ODISHA, INDIA DEPARTMENT OF ELECTRICAL ENGINEERING Lecture Notes on Power Electronics Subject code – BEE1602 6th Semester B.Tech. (Electrical Engineering) Disclaimer This document does not claim any originality and cannot be used as a substitute for prescribed textbooks. The information presented here is merely a collection by the committee members for their respective teaching assignments. Various sources as mentioned at the end of the document as well as freely available material from internet were consulted for preparing this document. The ownership of the information lies with the respective authors or institutions. Further, this document is not intended to be used for commercial purpose and the committee members are not accountable for any issues, legal or otherwise, arising out of use of this document. The committee members make no representations or warranties with respect to the accuracy or completeness of the contents of this document and specifically disclaim any implied warranties of merchantability or fitness for a particular purpose. The committee members shall be liable for any loss of profit or any other commercial damages, including but not limited to special, incidental, consequential, or other damages. (6TH SEMESTER) POWER ELECTRONICS (3-1-0) MODULE-I (10 HOURS) Thyristors, Static V-I Characteristics of SCR, TRIAC, GTO & IGBT, Turn-On & Turn-OFF Mechanism of SCR, Gate Turnoff Thyristor (GTO) .Power BJTs . Power MOSFETs - Insulated Gate Bipolar Transistors (IGBTs) - Basic Structure and VI Characteristics. Static, dynamic and thermal characteristics. Protection, cooling and mounting techniques. Series and Parallel operation of devices. Triggering and basics of driver circuits.
    [Show full text]
  • Power Semiconductor Devices the Difference
    University of Technology Lecture Note 2 Electrical Engineering Department Introduction to PSDs Electrical Engineering Division Page 1 of 10 EG 405: Power Electronics Dr. Oday A. Ahmed Power semiconductor devices Power semiconductor devices constitute the heart of modern power electronic apparatus. The main function of the power semiconductor devices (PSD) in the power converter system are used as on/off switches to control the energy transfer between the source and the load. The Basic representation of the power semiconductor device can be represented as a traditional switch as shown in Fig.1. Fig.1 Figure 2 below shows a simple feature of using PSD as a switch in converting energy between the source and the load. S S S Vo Vo Vs Vs Vs Vo Mode I: S → ON Mode II: S→ OFF Vs Vo= Vs for T=ton V = 0 for T=t o off T: Switching cycle Vo Vs Average output voltage is less than DC input Fig.2 ton toff T voltage Vs The difference between ideal switch and practical switch As mentioned before, PSDs use as switches in PE converters. The switch in practical has different features in practical over its features in ideal case. This can be recognize as described below: Ideal Switch If the PSD considered working as ideal switch then it should be: ■ When switch is OFF, i =0 and -∞≤v≤+∞ which implies that PON=0 University of Technology Lecture Note 2 Electrical Engineering Department Introduction to PSDs Electrical Engineering Division Page 2 of 10 EG 405: Power Electronics Dr. Oday A. Ahmed ■ When switch is ON, V =0 and -∞≤ I ≤+∞ which implies that PON=0 It should be possible to easily turn the switch ON and OFF by applying an appropriate control signal.
    [Show full text]
  • Part I :Power Electronics Chapter One
    PART I :POWER ELECTRONICS CHAPTER ONE POWER ELECTRONICS FUNDAMENTALS 1.1 INTRODUCTION The first electronics revolution began in 1948 with the invention of the bipolar silicon transistor at Bell Telephone Laboratories by Bardeen, Bratain, and Schockley. This invention leads to the most recent advanced in electronic technologies seen today. Also, modern microelectronics has evolved over the years from these silicon semiconductors. In 1957, the second electronics revolution started with the development of the four- layer high power commercial thyristor by the General Electric Company in USA. The invention of this device and its later applications in energy processing and motor control fields has initiated a new era of power electronics. From the early 1960s until quite recently, the thyristor and its family was almost universally used as the high power semiconductor switch which leads to introduction of many different types of energy conversion techniques. The energy conversion using power electronics achieves conversion of electric power from one form to another, using a combin- ation of high-power semiconductor devices and passive components, mainly transformers, inductors, and capacitors. The input and output may be alternating current (a.c.) or direct current (d.c.) and may differ in magnitude and/or frequency. The end goals of a power electronic conv- erter are to achieve high efficiency of conversion, minimize size and weight, and achieve desired regulation of the output. Power electronic converters can be classified into four different types on the basis of input and output, dc-dc, dc-ac, ac-dc, and ac-ac, named with the first part referring to the input and the second to the output.
    [Show full text]