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Material Science Paper No. : 09 Semiconductor Materials and Devices Module: 2.2 MOS capacitors Development Team Prof. Vinay Gupta ,Department of Physics and Astrophysics, Principal Investigator University of Delhi, Delhi Dr. Monika Tomar ,Physics Department ,Miranda House Paper Coordinator University of Delhi, Delhi Dr. Monika Tomar, Department of Physics, Miranda House University of Delhi, Delhi Content Writer Dr. Ayushi Paliwal, Department of Physics, Deshbandhu College, University of Delhi, Delhi Prof. Vinay Gupta ,Department of Physics and Astrophysics, Content Reviewer University of Delhi, Delhi 1 Semiconductor Materials and Devices Material Science MOS capacitors Description of Module Subject Name Material Science Paper Name Semiconductor Materials and Devices Module Name/Title Basics of BJT and JFET Module Id 2.2 2 Semiconductor Materials and Devices Material Science MOS capacitors Some interesting facts In 1959 M. M. (John) Atalla and Dawon Kahng at Bell Labs achieved the first successful insulated-gate field-effect transistor (FET), which had been long anticipated by Lilienfeld, Heil, Shockley and others (1926 Milestone) by overcoming the "surface states" that blocked electric fields from penetrating into the semiconductor material. Investigating thermally grown silicon-dioxide layers, they found these states could be markedly reduced at the interface between the silicon and its oxide in a sandwich comprising layers of metal (M - gate), oxide (O - insulation), and silicon (S - semiconductor) - thus the name MOSFET, popularly known as MOS. As their device was slow and addressed no pressing needs of the telephone system, it was not pursued further. In a 1961 memo, however, Kahng pointed out its potential "ease of fabrication and the possibility of application in integrated circuits." But researchers at Fairchild and RCA did recognize these advantages. In 1960 Karl Zaininger and Charles Meuller fabricated an MOS transistor at RCA and C.T. Sah of Fairchild built an MOS-controlled tetrode. Fred Heiman and Steven Hofstein followed in 1962 with an experimental 16-transistor integrated device at RCA. References: Simon M. Sze-Physics of Semiconductor Devices-Wiley-Interscience (1981) Michael Shur-Physics of Semiconductor Devices-PH (1990) Donald A. Neamen-Semiconductor Physics And Devices_ Basic Principles-McGraw-Hill (2011) 3 Semiconductor Materials and Devices Material Science MOS capacitors .

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