Semiconductor Process Technologies

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Semiconductor Process Technologies ECE222 First Transistor 1947 Bardeen Brattain and Shockley invented the first point- contact transistor. 2 http://www.porticus.org/bell/belllabs_transistor.html First Planar Transistor: Fairchild 2N1613 Jean Hoerni, Fairchild Semiconductor, 1959 Silicon NPN Planar Transistor Protective oxide layer on top 3 http://semiconductormuseum.com/PhotoGallery/PhotoGallery_2N1613.htm First MOSFET M.M. Atalla and Dawon Kahng, Bell Labs, 1959 MOSFET Transistor 4 First Integrated Circuit Jack Kilby, Texas Instruments, 1958 First IC: five resistors and capacitors on a germanium substrate 5 http://www.computerhistory.org/timeline/?category=cmpnt First Monolithic IC Fairchild Semiconductor, 1961 Resistor-transistor logic (RTL) flip-flop 6 http://www.computerhistory.org/timeline/?category=cmpnt From Transistor to Integrated Circuit Vacuum tube Integrated circuits Point-contact (1961) transistor (1947) Diffused-base transistor (1955) Junction bipolar transistor (1951) Dates in parenthesis are when the technology was invented. 7 Modern VLSI IBM Power5 Microprocessor Copper Interconnect 8 MOSFET Device Structure Polysilicon Aluminum 9 MOSFET Device Structure: Cross Section 10 Integrated Circuit Process Flow 11 Crystal Growth 12 Silicon Crystal Ingots 13 Silicon Wafer 14 Oxidation 15 Oxidation 16 Chemical-Vapor Deposition (CVD) Used for deposition of • Silicon films: epitaxy layer, polysilicon • Dielectric Films: SiO2, Nitride, … 17 • Metals: aluminum, tungsten, TiN, … Sputtering for Metallization Ion beam 18 Photolithography: Shadow Printing UV Light 19 Lithography: Projection Printing (a) annual-field wafer scan (b) 1:1 step-and-repeat 20 (c) M:1 reduction step-and-repeat (d) M:1 reduction step-and-scan Pattern Transfer by Photolithography Positive Negative Resist Resist A big advantage of silicon vs. GaAs is that SiO2 can be used as the mask for silicon in pattern transfer 21 Liftoff Process Used extensively for discrete devices such as power MOSFETs 22 Wet Chemical Etching Material Etchant Si HNO3+HF SiO2 HF (or NH4F) Si3N4 HF or H3PO4 Al H3PO4+… 23 Orientation-Dependent Etching of Single-Crystal Silicon 24 Plasma-Assisted Dry Etching Plasma Etching Mechanisim Reactive Ion Etching (RIE) Reactor Silicon Trenches by Deep RIE 25 Wet Etching vs. Dry Etching Wet Etching: •Isotropic • Loss of resolution in pattern transfer Dry Etching: • Anisotropic • High-fidelity transfer 26 Chemical-Mechanical Polishing (CMP) 27 Metal Patterning: Damascene Process 28 Impurity Doping: Diffusion & Ion Implantation 29 Diffusion 30 Ion Implantation 31 Packaging Chip Package Wirebond Chip-Stack 32 Flip-Chip Further Reading • Sedra & Smith, A.1 •S.M. Sze, Semiconductor Devices: Physics and Technology, 2nd ed., Wiley, 2002 • International Technology Roadmap for Semiconductors, http://public.itrs.net 33.

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Chapter1: Semiconductor Diode
Chapter1: Semiconductor Diode. Electronics I Discussion Eng.Abdo Salah Theoretical Background: • The semiconductor diode is formed by doping P-type impurity in one side and N-type of impurity in another side of the semiconductor crystal forming a p-n junction as shown in the following figure. At the junction initially free charge carriers from both side recombine forming negatively c harged ions in P side of junction(an atom in P -side accept electron and be comes negatively c harged ion) and po sitive ly c harged ion on n side (an atom in n-side accepts hole i.e. donates electron and becomes positively charged ion)region. This region deplete of any type of free charge carrier is called as depletion region. Further recombination of free carrier on both side is prevented because of the depletion voltage generated due to charge carriers kept at distance by depletion (acts as a sort of insulation) layer as shown dotted in the above figure. Working principle: When voltage is not app lied acros s the diode , de pletion region for ms as shown in the above figure. When the voltage is applied be tween the two terminals of the diode (anode and cathode) two possibilities arises depending o n polarity of DC supply. [1] Forward-Bias Condition: When the +Ve terminal of the battery is connected to P-type material & -Ve terminal to N-type terminal as shown in the circuit diagram, the diode is said to be forward biased. The application of forward bias voltage will force electrons in N-type and holes in P -type material to recombine with the ions near boundary and to flow crossing junction.
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Nanoscale Transistors Fall 2006 Mark Lundstrom Electrical
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Intuitive Analog Circuit Design
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Copyrighted Material
pter O ha n C e An Historic Overview of Venture Capitalism • Those who cannot remember the past are condemned to repeat it. —George Santayana Why is an historical overview of VC important? Because history does in fact repeat itself, and a study of history allows us to frame an understanding of the present and the future. The playersCOPYRIGHTED and the investment climate MATERIAL change, but the entrepreneur’s innate instinct to risk capital for a return is no different today from what it was when John D. Rockefeller became America’s first billionaire in 1900. When Andrew c01.indd 1 10-12-2013 8:50:11 [2] The Little Book of Venture Capital Investing Carnegie joined forces with his childhood friend, Henry Phipps, to form Carnegie Steel in 1892, they were driven by the same conviction to improve the status quo as are the idealistic dream chasers of the twenty-first century. It was these early trailblazers who paved the way and developed the techniques that have laid the foundation for VC as we know it today. Arguably, historians will debate the nature of history and its usefulness. This includes using the discipline as a way of providing perspective on the problems and opportu- nities of the present. I believe it to be an important tool in providing a systematic account and window to the future. It is patently dishonest and irresponsible to perpetuate the popular mythology that those who created great wealth in America are to be despised and that there are no useful les- sons to be learned from an objective, historical review of their contributions to the subject at hand.
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