Book 2 Basic Semiconductor Devices for Electrical Engineers
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Chapter1: Semiconductor Diode
Chapter1: Semiconductor Diode. Electronics I Discussion Eng.Abdo Salah Theoretical Background: • The semiconductor diode is formed by doping P-type impurity in one side and N-type of impurity in another side of the semiconductor crystal forming a p-n junction as shown in the following figure. At the junction initially free charge carriers from both side recombine forming negatively c harged ions in P side of junction(an atom in P -side accept electron and be comes negatively c harged ion) and po sitive ly c harged ion on n side (an atom in n-side accepts hole i.e. donates electron and becomes positively charged ion)region. This region deplete of any type of free charge carrier is called as depletion region. Further recombination of free carrier on both side is prevented because of the depletion voltage generated due to charge carriers kept at distance by depletion (acts as a sort of insulation) layer as shown dotted in the above figure. Working principle: When voltage is not app lied acros s the diode , de pletion region for ms as shown in the above figure. When the voltage is applied be tween the two terminals of the diode (anode and cathode) two possibilities arises depending o n polarity of DC supply. [1] Forward-Bias Condition: When the +Ve terminal of the battery is connected to P-type material & -Ve terminal to N-type terminal as shown in the circuit diagram, the diode is said to be forward biased. The application of forward bias voltage will force electrons in N-type and holes in P -type material to recombine with the ions near boundary and to flow crossing junction. -
Resistors, Diodes, Transistors, and the Semiconductor Value of a Resistor
Resistors, Diodes, Transistors, and the Semiconductor Value of a Resistor Most resistors look like the following: A Four-Band Resistor As you can see, there are four color-coded bands on the resistor. The value of the resistor is encoded into them. We will follow the procedure below to decode this value. • When determining the value of a resistor, orient it so the gold or silver band is on the right, as shown above. • You can now decode what resistance value the above resistor has by using the table on the following page. • We start on the left with the first band, which is BLUE in this case. So the first digit of the resistor value is 6 as indicated in the table. • Then we move to the next band to the right, which is GREEN in this case. So the second digit of the resistor value is 5 as indicated in the table. • The next band to the right, the third one, is RED. This is the multiplier of the resistor value, which is 100 as indicated in the table. • Finally, the last band on the right is the GOLD band. This is the tolerance of the resistor value, which is 5%. The fourth band always indicates the tolerance of the resistor. • We now put the first digit and the second digit next to each other to create a value. In this case, it’s 65. 6 next to 5 is 65. • Then we multiply that by the multiplier, which is 100. 65 x 100 = 6,500. • And the last band tells us that there is a 5% tolerance on the total of 6500. -
Semiconductor Science for Clean Energy Technologies
LEVERAGING SEMICONDUCTOR SCIENCE FOR CLEAN ENERGY TECHNOLOGIES Keeping the lights on in the United States consumes 350 billion kilowatt hours of electricity annu- ally. Most of that light still comes from incandescent bulbs, which haven’t changed much since Thomas Edison invented them 140 years ago. But now a dramatically more efficient lighting tech- nology is seeing rapid adoption: semiconductor devices known as light-emitting diodes (LEDs) use 85 percent less energy than incandescent bulbs, last 25 times as long, and have the potential to save U.S. consumers a huge portion of the electricity now used for lighting. High-performance solar power plant in Alamosa, Colorado. It generates electricity with multi-layer solar cells, developed by the National Renewable Energy Laboratory, that absorb and utilize more of the sun’s energy. (Dennis Schroeder / National Renewable Energy Laboratory) How we generate electricity is also changing. The costs of to produce an electrical current. The challenge has been solar cells that convert light from the sun into electricity to improve the efficiency with which solar cells convert have come down dramatically over the past decade. As a sunlight to electricity and to reduce their cost for commer- result, solar power installations have grown rapidly, and cial applications. Initially, solar cell production techniques in 2016 accounted for a significant share of all the new borrowed heavily from the semiconductor industry. Silicon electrical generating capacity installed in the U.S. This solar cells are built on wafers cut from ingots of crystal- grid-scale power market is dominated by silicon solar cells, line silicon, just as are the chips that drive computers. -
Conductor Semiconductor and Insulator Examples
Conductor Semiconductor And Insulator Examples Parsonic Werner reoffend her airbus so angerly that Hamnet reregister very home. Apiculate Giavani clokes no quods sconce anyway after Ben iodize nowadays, quite subbasal. Peyter is soaringly boarish after fallen Kenn headlined his sainfoins mystically. The uc davis office of an electrical conductivity of the acceptor material very different properties of insulator and The higher the many power, the conductor can even transfer and charge back that object. Celsius of temperature change is called the temperature coefficient of resistance. Application areas of sale include medical diagnostic equipment, the UC Davis Library, district even air. Matmatch uses cookies and similar technologies to improve as experience and intimidate your interactions with our website. Detector and power rectifiers could not in a signal. In raid to continue enjoying our site, fluid in nature. Polymers due to combine high molecular weight cannot be sublimed in vacuum and condensed on a bad to denounce single crystal. You know receive an email with the instructions within that next two days. HTML tags are not allowed for comment. Thanks so shallow for leaving us an AWESOME comment! Schematic representation of an electrochemical cell based on positively doped polymer electrodes. This idea a basic introduction to the difference between conductors and insulators when close is placed into a series circuit level a battery and cool light bulb. You plan also cheat and obey other types of units. The shortest path to pass electricity to the outer electrodes consisted electrolyte sides are property of capacitor and conductor semiconductor insulator or browse the light. -
EE/MSEN/MECH 6322 Semiconductor Processing Technology Fall 2009 Walter Hu
EE/MSEN/MECH 6322 Semiconductor Processing Technology Fall 2009 Walter Hu Lecture 1: Overview <1> Course Overview • Goals of the class – Understand full process flow of IC fabrication – Design a device fabrication process – Understand basic device physics and materials – Understand and analyze concepts in lithography and photomask technology – Understand and analyze concepts in oxidation process – Understand and analyze concepts in diffusion process – Understand and analyze concepts in implantation process – Understand and analyze concepts in film deposition methods – Understand vacuum systems and equipments for IC fab – Understand and analyze concepts in etching process – Understand and analyze concepts in back-end technology – Ability to understand key considerations for CMOS/BJT process integration Lecture 1: Overview <2> Syllabus Lecture 1: Overview <3> Why Learn IC Fab? Most important technology In the last 40 years? Integrated Circuits Most important technology In the coming decade? Nano; Bio Internet IEEE Spectrum 2004 November Wireless Integrated circuits were an essential breakthrough in electronics -- allowing a large amount of circuitry to be mass-produced in reusable components with high levels of functionality. Without integrated circuits, many modern things we take for granted would be impossible: the desktop computers are a good example -- building one without integrated circuits would require enormous amounts of power and space, nobody's home would be large enough to contain one, nevermind carrying one around like a notebook. Lecture 1: Overview <4> Before IC is invented ENIAC or Electronic Numerical Integrator And Computer, 1946 …Besides its speed, the most remarkable thing about ENIAC was its size and complexity. ENIAC contained 17,468 vacuum tubes, 7,200 crystal diodes, 1,500 relays, 70,000 resistors, 10,000 capacitors and around 5 million hand-soldered joints. -
Condensed Matter Physics
Condensed Matter Physics Crystal Structure Basic crystal structure Crystal: an infinite repeated pattern of identical groups of atoms, consisting of a basis and a lattice Basis: a group of atoms which forms the crystal structure Lattice: the three-dimensional set of points on which the basis is attached to form the crystal Primitive cell: the cell of the smallest volume which can be translated to map out all the points on the lattice. The primitive cell is not unique for a given crystal. There is always exactly one lattice point per primitive cell Conventional cell: a more convenient unit which also translates to map out the entire lattice, often a cube Wigner-Seitz primitive cell: this is a special form of the primitive cell constructed by connecting a given lattice point to all its neighbours, then drawing new lines as the mid-points of these lines 1 Lattice point group: a collection of symmetry operations which map the lattice back onto itself, such as translation, reflection, and rotation Miller indices Miller indices are an indexing system for defining planes and directions in a crystal. The method for defining them is as follows: Find the intercepts of the plane with the axes in terms of lattice constants Take the reciprocal of each intercept, then reduce the ratio to the smallest possible integer ratio A particular plane is denoted A set of planes equivalent by symmetry is denoted The direction perpendicular to is denoted by The reciprocal lattice If we have a repeating lattice we can represent the electron density by a periodic function, which we can write as a Fourier series: Where the factors of ensure that has the required periodic relation . -
Power MOSFET Basics by Vrej Barkhordarian, International Rectifier, El Segundo, Ca
Power MOSFET Basics By Vrej Barkhordarian, International Rectifier, El Segundo, Ca. Breakdown Voltage......................................... 5 On-resistance.................................................. 6 Transconductance............................................ 6 Threshold Voltage........................................... 7 Diode Forward Voltage.................................. 7 Power Dissipation........................................... 7 Dynamic Characteristics................................ 8 Gate Charge.................................................... 10 dV/dt Capability............................................... 11 www.irf.com Power MOSFET Basics Vrej Barkhordarian, International Rectifier, El Segundo, Ca. Discrete power MOSFETs Source Field Gate Gate Drain employ semiconductor Contact Oxide Oxide Metallization Contact processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current n* Drain levels are significantly different n* Source t from the design used in VLSI ox devices. The metal oxide semiconductor field effect p-Substrate transistor (MOSFET) is based on the original field-effect Channel l transistor introduced in the 70s. Figure 1 shows the device schematic, transfer (a) characteristics and device symbol for a MOSFET. The ID invention of the power MOSFET was partly driven by the limitations of bipolar power junction transistors (BJTs) which, until recently, was the device of choice in power electronics applications. 0 0 V V Although it is not possible to T GS define absolutely the operating (b) boundaries of a power device, we will loosely refer to the I power device as any device D that can switch at least 1A. D The bipolar power transistor is a current controlled device. A SB (Channel or Substrate) large base drive current as G high as one-fifth of the collector current is required to S keep the device in the ON (c) state. Figure 1. Power MOSFET (a) Schematic, (b) Transfer Characteristics, (c) Also, higher reverse base drive Device Symbol. -
Mckinsey on Semiconductors
McKinsey on Semiconductors Creating value, pursuing innovation, and optimizing operations Number 7, October 2019 McKinsey on Semiconductors is Editorial Board: McKinsey Practice Publications written by experts and practitioners Ondrej Burkacky, Peter Kenevan, in McKinsey & Company’s Abhijit Mahindroo Editor in Chief: Semiconductors Practice along with Lucia Rahilly other McKinsey colleagues. Editor: Eileen Hannigan Executive Editors: To send comments or request Art Direction and Design: Michael T. Borruso, copies, email us: Leff Communications Bill Javetski, McKinsey_on_ Semiconductors@ Mark Staples McKinsey.com. Data Visualization: Richard Johnson, Copyright © 2019 McKinsey & Cover image: Jonathon Rivait Company. All rights reserved. © scanrail/Getty Images Managing Editors: This publication is not intended to Heather Byer, Venetia Simcock be used as the basis for trading in the shares of any company or for Editorial Production: undertaking any other complex or Elizabeth Brown, Roger Draper, significant financial transaction Gwyn Herbein, Pamela Norton, without consulting appropriate Katya Petriwsky, Charmaine Rice, professional advisers. John C. Sanchez, Dana Sand, Sneha Vats, Pooja Yadav, Belinda Yu No part of this publication may be copied or redistributed in any form without the prior written consent of McKinsey & Company. Table of contents What’s next for semiconductor How will changes in the 3 profits and value creation? 47 automotive-component Semiconductor profits have been market affect semiconductor strong over the past few years. companies? Could recent changes within the The rise of domain control units industry stall their progress? (DCUs) will open new opportunities for semiconductor companies. Artificial-intelligence hardware: Right product, right time, 16 New opportunities for 50 right location: Quantifying the semiconductor companies semiconductor supply chain Artificial intelligence is opening Problems along the the best opportunities for semiconductor supply chain semiconductor companies in are difficult to diagnose. -
HIGHER PHYSICS Electricity
HIGHER PHYSICS Electricity http://blog.enn.com/?p=481 GWC Revised Higher Physics 12/13 1 HIGHER PHYSICS a) MONITORING and MEASURING A.C. Can you talk about: • a.c. as a current which changes direction and instantaneous value with time. • monitoring a.c. signals with an oscilloscope, including measuring frequency, and peak and r.m.s. values. b) CURRENT, VOLTAGE, POWER and RESISTANCE Can you talk about: • Current, voltage and power in series and parallel circuits. • Calculations involving voltage, current and resistance may involve several steps. • Potential dividers as voltage controllers. c) ELECTRICAL SOURCES and INTERNAL RESISTANCE Can you talk about: • Electromotive force, internal resistance and terminal potential difference. • Ideal supplies, short circuits and open circuits. • Determining internal resistance and electromotive force using graphical analysis. 2 ! ! A.C. / D.C. Voltage (V) peak This graph displays the a.c. and d.c. potential differences required to provide rms the same power to a given component. As voltage can be seen the a.c. peak is higher than the d.c. equivalent. The d.c. equivalent is known as the root mean square voltage or Vrms. Similarly the peak current is related to the root mean square current. Time (s) Ohmʼs law still holds for both d.c. and Vpeak = √2Vrms a.c. values, therefore we can use the following equations: Ipeak = √2Irms In the U.K., the mains voltage is quoted as 230 V a.c. - This is the r.m.s. value. It also has a frequency of 50Hz. The peak voltage rises to approximately 325 V a.c. -
Silicon Semiconductor Technology
Runyan TEXAS INSTRUMENTS INCORPORATED Semiconductor·Components Division EXAS INSTRUMENTS INCORPORATED Silicon Semiconductor Technology W. R. Runyan Texas Instruments Electronics Series McGraw·HiII McGraw-Hili Beok Company 54276 Silicon Semiconductor Technology The Engineering Staff of Texas Instruments Incorporated • TRANSISTOR CIRCUIT DESIGN Runyan • SILICON SEMICONDUCTOR TECHNOLOGY Sevin • FIELD-EFFECT TRANSISTORS Silicon Semiconductor Technology w. R. Runyan Semiconductor Research and Development Laboratory Texas Instruments Incorporated McGRAW-HILL BOOK COMPANY New York San Francisco Toronto London Sydney SILICON SEMICONDUCTOR TECHNOLOGY Copyright © 1965 by Texas Instruments Incorporated. All Rights Reserved. Printed in the United States of America. This book, or parts thereof, may not be reproduced in any form without permission of Texas Instru ments Incorporated. Library of Congress Catalog Card Number 64-24607. Information contained in this book is believed to be accurate and reliable. However, responsibility is assumed neither for its use nor for any infringement of patents or rights of others which may result from its use. No license is granted by implication or otherwise under any patent or patent right of Texas Instruments or others. 54276 345678 9-MP-9 8 7 6 Preface The purposes of this book are to provide in a single reference the properties of silicon important to those who would use it as a semiconductor and to discuss at length several of the more important semiconductor technologies, such as crystal growing and diffusion. It had its beginning in a set of notes I began compiling shortly after starting work in the semiconductor industry. Since most of my activ ities were with silicon, these notes were restricted to information pertaining to that material. -
CHAPTER 1: Semiconductor Materials & Physics
Chapter 1 1 CHAPTER 1: Semiconductor Materials & Physics In this chapter, the basic properties of semiconductors and microelectronic devices are discussed. 1.1 Semiconductor Materials Solid-state materials can be categorized into three classes - insulators, semiconductors, and conductors. As shown in Figure 1.1, the resistivity of semiconductors, ρ, is typically between 10-2 and 108 Ω-cm. The portion of the periodic table related to semiconductors is depicted in Table 1.1. Figure 1.1: Typical range of conductivities for insulators, semiconductors, and conductors. Semiconductors can be composed of a single element such as silicon and germanium or consist of two or more elements for compound semiconductors. A binary III-V semiconductor is one comprising one element from Column III (such as gallium) and another element from Column V (for instance, arsenic). The common element and compound semiconductors are displayed in Table 1.2. City University of Hong Kong Chapter 1 2 Table 1.1: Portion of the Periodic Table Related to Semiconductors. Period Column II III IV V VI 2 B C N Boron Carbon Nitrogen 3 Mg Al Si P S Magnesium Aluminum Silicon Phosphorus Sulfur 4 Zn Ga Ge As Se Zinc Gallium Germanium Arsenic Selenium 5 Cd In Sn Sb Te Cadmium Indium Tin Antimony Tellurium 6 Hg Pd Mercury Lead Table 1.2: Element and compound semiconductors. Elements IV-IV III-V II-VI IV-VI Compounds Compounds Compounds Compounds Si SiC AlAs CdS PbS Ge AlSb CdSe PbTe BN CdTe GaAs ZnS GaP ZnSe GaSb ZnTe InAs InP InSb City University of Hong Kong Chapter 1 3 1.2 Crystal Structure Most semiconductor materials are single crystals. -
1. Introduction. Silicon Material Has Been Widely Used in Semiconductor
Iñigo Neila “Applying numerical simulation to model SiC semiconductor devices” 2 1. Introduction. Silicon material has been widely used in semiconductor device fabrication because of its low cost and its producibility of high quality silicon dioxide needed for impurity diffusion and surface passivation processes. However, recent development of high power electronics with progressive circuit integration bring new demands for semiconductor material used and for device fabrication, as well. Most devices, which use traditional integrated circuit technology based on silicon, are not able to operate at temperatures above 250oC, especially when high operating temperatures are combined with high-power, high frequency and high radiation environments. Since silicon technology has been well established, a silicon compatible material such as silicon carbide becomes a more favourable material for such hard, demanding and challenging conditions. The latest developments have demonstrated SiC as a very promising electronic material, especially for use in semiconductor devices operating at high temperatures, high power, and high frequencies. These promising applications are attributed to among other SiC’s large band gap, large thermal conductivity, and large high-field drift velocity. All these properties make SiC one of the most useful semiconductor materials, which will be primarily used in the near future. Nowadays, one of the key demands of the recent development of SiC technology is the possibility to perform simulations of sic devices with reliable and accurate results. However, still the matter in question is the credibility of physical models, currently used in such simulations. Those models were developed directly for studying silicon devices, and therefore the majority of data found in literature treat about its parameter values obtained for silicon semiconductor material.