Aug. 27, 1963 DAWON KAHNG 3,102,230 ELECTRIC FIELD CONTROLLED SEMICONDUCTOR DEVICE Filed May 31, 1960
Aug. 27, 1963 DAWON KAHNG 3,102,230 ELECTRIC FIELD CONTROLLED SEMICONDUCTOR DEVICE Filed May 31, 1960 F/a/A _ f’ v IJ Wki§¢£§lmfgkw Q F/G. /B 24 _ 2/ 0 FIG. 2 I I0 - i l V’ 4 S‘ 1 4 _ ~ I 34 -2 | '8/ 2 _ l ‘/ —4 II 38 \ 10-4 IL AMPERES lNl/ENTOR By D.KAHNG ATTORNE V ,. 3,102,230 United States Patent 0 ICC Patented Aug. 27, 1963 1 2 than .025 inch square but occupying a surface area of 3,102,230 less than 3><l0-‘1 (inch)? The oxide coating 19 is in ELECTRIC FIELD CONTROLLED SEMl intimate contact with surface 18 of the wafer. The oxide CONDUCTOR DEVICE is about 1000‘ angstrom units thick and thermally grown Dawon Kahng, Plain?eld, N.J., assignor to Bell Tele phone Laboratories, Incorporated, New York, N.Y., a in accordance with the processes described in United corporation of New York - . States Patent No. 2,930,722, issued March 29, 1960 to Filed May 31, 1%0, Ser. No. 32,801 J. R. Ligenza. These pnocesses leave oxide coatings over 6 Claims. (Cl. 323-94) - the entire device. The ‘oxide can be restricted to selected portions of the surface of the ‘device, if so desired, by This invention relates to circuit arrangements including well-known masking or lapping techniques. The oxide is dielectric coated semiconductor devices. 10 shown restricted in the ?gure primarily for clarity. An More particularly, the present invention relates to cir electrode 21 is deposited over the exposed surface 22 of cuit arrangements utilizing a semiconductive device which the oxide coating 19 to extend over the region of inter comprises either a p-n-p or n-p-n Wafer having a dielec section__of both p-n junctions'lld and 17.
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