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MOSFET - Wikipedia, the Free Encyclopedia
MOSFET - Wikipedia, the free encyclopedia http://en.wikipedia.org/wiki/MOSFET MOSFET From Wikipedia, the free encyclopedia The metal-oxide-semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET), is by far the most common field-effect transistor in both digital and analog circuits. The MOSFET is composed of a channel of n-type or p-type semiconductor material (see article on semiconductor devices), and is accordingly called an NMOSFET or a PMOSFET (also commonly nMOSFET, pMOSFET, NMOS FET, PMOS FET, nMOS FET, pMOS FET). The 'metal' in the name (for transistors upto the 65 nanometer technology node) is an anachronism from early chips in which the gates were metal; They use polysilicon gates. IGFET is a related, more general term meaning insulated-gate field-effect transistor, and is almost synonymous with "MOSFET", though it can refer to FETs with a gate insulator that is not oxide. Some prefer to use "IGFET" when referring to devices with polysilicon gates, but most still call them MOSFETs. With the new generation of high-k technology that Intel and IBM have announced [1] (http://www.intel.com/technology/silicon/45nm_technology.htm) , metal gates in conjunction with the a high-k dielectric material replacing the silicon dioxide are making a comeback replacing the polysilicon. Usually the semiconductor of choice is silicon, but some chip manufacturers, most notably IBM, have begun to use a mixture of silicon and germanium (SiGe) in MOSFET channels. Unfortunately, many semiconductors with better electrical properties than silicon, such as gallium arsenide, do not form good gate oxides and thus are not suitable for MOSFETs. -
Cleanroom Facilities: Experience from an User
Cleanroom Facilities: Experience from an user Mark Ming-Cheng Cheng Electrical and Computer Engineering Wayne State University Detroit MI USA [email protected] WAYNE STATE UNIVERSITY Cheng Cleanroom 8/2 Thin Micro/NanoFilm Deposition Fabrication Microfabrication is the term that describes processes of fabrication of miniature structures, of mironmeter sizes and smaller. Historically the earliest microfabrication processes were used for integrated circuit fabrication, also known as “ semiconductor manufacturing ”, ” microelectronic fabrication ”, ” VLSI technology ”. 65nm 2 cores; Introduced 2006 291 millions transistors 1.8 ~3GHz Die size 111mm 2; 65W WAYNE STATE UNIVERSITY Cheng Cleanroom Thin Micro/NanoFilm Deposition Fabrication In the last two decades, microfabrication has been used in many research fields, including * Micro Electromechanical System (MEMS) * RF MEMS (resonators, filters, switches, phase shifters) * Microfluidics/ Lab-on-Chip * Bio MEMS * Solar cells * Flat panel display * NEMS WAYNE STATE UNIVERSITY Cheng Cleanroom EnablingThin Film Deposition Technology in iPhone Microphone Accelerometer GPU (graphic processor) 45nm WAYNE STATE UNIVERSITY Cheng Cleanroom ThinHow Film Deposition to Make Sandwiches? Add bread Cut bread Cut vegetables Place vegetables … METHOD AND APPARATUS FOR MAKING A SANDWICH International Publication Number WO 2006/068865 AW Section (54) WAYNE STATE UNIVERSITY Cheng Cleanroom How to Make Devices? /etching pMOS Deposition Module Photolightography Module (Pattern Transfer) Etching Module WAYNE STATE UNIVERSITY Cheng Cleanroom Materials Semiconductor Insulator Metal (Si, C, SiC, GaAs ) (SiO 2, Si 3N4,glass, (Au, Pt, Al, Cr, Ti, Ni..) polymer, ceramics) WAYNE STATE UNIVERSITY Cheng Cleanroom Thin Film Deposition (overview) 0 I. Furnace (Few hundred~1100 C, atmosphere): SiO 2, P++ II. Low Pressure Chemical Vapor Deposition System (LPCVD): polycrystalline Si, amorphous SiO 2 III. -
14Ec230-Semiconductor Devices Innovative Method
14EC230-SEMICONDUCTOR DEVICES INNOVATIVE METHOD N.B.Balamurugan Associate Professor ECE Department Thiagarajar College of Engineering Madurai-15 nbbalamurugan @tce.edu 09894346320 1928 • The first patents for the transistor principle were registered in Germany by Julius Edgar Lilienfield. • He proposed the basic principle behind the MOS field-effect transistor. 2 1934 • German Physicist Dr. Oskar Heil patented the Field Effect Transistor 3 1936 • Mervin Kelly Bell Lab's director of research. He felt that to provide the best phone service it will need a better amplifier; the answer might lie in semiconductors. And he formed a department dedicated to solid state science. 4 1945 • Bill Shockley the team leader of the solid state department (Hell’s Bell Lab) hired Walter Brattain and John Bardeen. • He designed the first semiconductor amplifier, relying on the field effect. • His device was a small cylinder coated thinly with silicon, mounted close to a small, metal plate. • The device didn't work, and Shockley assigned Bardeen and Brattain to find out why. 5 1949 cont. • Shockley make the Junction transistor (sandwich). • This transistor was more practical and easier to fabricate. • The Junction Transistor became the central device of the electronic age 6 ENIAC – First electronic computer (1946) • Built by John W. Mauchly (Computer Architecture) and J. Presper Eckert (Circuit Engineering) , Moore School of Electrical Engineering, University of Pennsylvania. Formed Eckert & Marchly Computer Co. and built the 2nd computer, “UNIVAC”. Went bankrupt in 1950 and sold to Remington Rand (now defunct). IBM built “401” in 1952 (1st commercial computer) and John von Neumann invented controversial concept of interchangeable data and programs. -
CSET Issue Brief
SEPTEMBER 2020 The Chipmakers U.S. Strengths and Priorities for the High-End Semiconductor Workforce CSET Issue Brief AUTHORS Will Hunt Remco Zwetsloot Table of Contents Executive Summary ............................................................................................... 3 Key Findings ...................................................................................................... 3 Workforce Policy Recommendations .............................................................. 5 Introduction ........................................................................................................... 7 Why Talent Matters and the American Talent Advantage .............................. 10 Mapping the U.S. Semiconductor Workforce .................................................. 12 Identifying and Analyzing the Semiconductor Workforce .......................... 12 A Large and International Workforce ........................................................... 14 The University Talent Pipeline ........................................................................ 16 Talent Across the Semiconductor Supply Chain .......................................... 21 Chip Design ................................................................................................ 23 Electronic Design Automation ................................................................... 24 Fabrication .................................................................................................. 24 Semiconductor Manufacturing Equipment (SME) Suppliers -
Aug. 27, 1963 DAWON KAHNG 3,102,230 ELECTRIC FIELD CONTROLLED SEMICONDUCTOR DEVICE Filed May 31, 1960
Aug. 27, 1963 DAWON KAHNG 3,102,230 ELECTRIC FIELD CONTROLLED SEMICONDUCTOR DEVICE Filed May 31, 1960 F/a/A _ f’ v IJ Wki§¢£§lmfgkw Q F/G. /B 24 _ 2/ 0 FIG. 2 I I0 - i l V’ 4 S‘ 1 4 _ ~ I 34 -2 | '8/ 2 _ l ‘/ —4 II 38 \ 10-4 IL AMPERES lNl/ENTOR By D.KAHNG ATTORNE V ,. 3,102,230 United States Patent 0 ICC Patented Aug. 27, 1963 1 2 than .025 inch square but occupying a surface area of 3,102,230 less than 3><l0-‘1 (inch)? The oxide coating 19 is in ELECTRIC FIELD CONTROLLED SEMl intimate contact with surface 18 of the wafer. The oxide CONDUCTOR DEVICE is about 1000‘ angstrom units thick and thermally grown Dawon Kahng, Plain?eld, N.J., assignor to Bell Tele phone Laboratories, Incorporated, New York, N.Y., a in accordance with the processes described in United corporation of New York - . States Patent No. 2,930,722, issued March 29, 1960 to Filed May 31, 1%0, Ser. No. 32,801 J. R. Ligenza. These pnocesses leave oxide coatings over 6 Claims. (Cl. 323-94) - the entire device. The ‘oxide can be restricted to selected portions of the surface of the ‘device, if so desired, by This invention relates to circuit arrangements including well-known masking or lapping techniques. The oxide is dielectric coated semiconductor devices. 10 shown restricted in the ?gure primarily for clarity. An More particularly, the present invention relates to cir electrode 21 is deposited over the exposed surface 22 of cuit arrangements utilizing a semiconductive device which the oxide coating 19 to extend over the region of inter comprises either a p-n-p or n-p-n Wafer having a dielec section__of both p-n junctions'lld and 17. -
Introductory Chapter: VLSI Introductory Chapter: VLSI
DOI: 10.5772/intechopen.69188 Provisional chapter Chapter 1 Introductory Chapter: VLSI Introductory Chapter: VLSI Kim Ho Yeap and Humaira Nisar Kim Ho Yeap and Humaira Nisar Additional information is available at the end of the chapter Additional information is available at the end of the chapter http://dx.doi.org/10.5772/intechopen.69188 1. Introduction Back in the old days about 40 years ago, the number of transistors found in a chip was, even at its highest count, less than 10,000. Take, for example, the once popular Motorola 6800 micro‐ processor developed in the mid 1970s. Fabricated based on the 6.0‐μm feature size, the 6800 consisted of merely 4100 transistors in it. Nowadays, the number of transistors in a very large‐ scale integration (VLSI) [or some refer to it as the super large‐scale integration (SLSI)] chip may possibly reach 10 billion, with a feature size smaller than 15 nm. There is little doubt that the electronics world has experienced a significant advancement for the past 50 years or so and this, to a large extent, is due to the rapid technology improvement in the performance, power, area, cost and ‘time to market’ of an integrated circuit (IC) chip. To provide readers with an overall view of VLSI, this chapter gives a concise but complete illus‐ tration on the historical evolution, design and development of VLSI‐integrated circuit devices. 2. A brief history When transistors were first introduced in early 1900s, they were actually made of vacuum tubes. These transistors were relatively large in size and cumbersome to be used. -
A History of MOS Transistor Compact Modeling Chih-Tang Sah Assisted by Bin B
A History of MOS Transistor Compact Modeling Chih-Tang Sah Assisted by Bin B. Jie University of Florida Gainesville, Florida 32611 U.S.A. ABSTRACT [4]. DC current-voltage (DCIV) equations and charge- control differential capacitance-voltage and conductance- The MOSFET (Metal-Oxide-Silicon Field-Effect- voltage equations were developed in the earlier 1960’s, Transistor) or MOS Transistor (MOST) is a three starting from drift current equation, then adding the current- dimensional electronic device. It operates on the depressing bulk-charge, and diffusion current for low conductivity modulation principle in a thin semiconductor current operations. These regional formulas explicitly layer by a controlling electric field to give amplifying and relate the transistor-terminal voltage and current variables. switching functions between three electrical terminals They are stitched together to cover all input (gate) and (input, output and common) connected to the film. This output (drain and source) voltage ranges by connection principle was first proposed 80 years ago (1926) by equations to provide continuity to higher derivatives in Lilienfeld. A review was given by this author in 1988 on order to simulate the details of switching transients in the evolution of the MOS transistor. A detailed tutorial digital applications, and small-signal frequency responses, exposition of the MOST Compact Modeling is planned. harmonic and higher order distortions and noise in analog Electrical characterization experiments and mathematical applications. These mathematical equations are simple and theory began 45 years ago (1959) when stable silicon fast to meet the speed limitation of early computers for oxides were grown on nearly perfect (crystalline, low simulations of circuits containing thousands or more defect) silicon semiconductor by Atalla, Tannenbaum and transistors. -
The Field Effect Transistor
The Field Effect Transistor 1. Introduction The Field Effect Transistor (FET) has a long story from concept to the first physical implementation. The idea of a field effect transistor was first presented and patented in 1926 by the physicist Julius Edgar Lilienfeld. In 1935, the electrical engineer and inventor Oskar Heil described the possibility of controlling the resistance in a semiconducting material with an electric field in a British patent. A team from Bell Labs formed by John Bardeen and Walter Houser Brattain under the supervision of William Shockley observed and described the transistor effect in 1947. Their trying to build a working FET was unsuccessful, but they accidentally discovered the point-contact transistor. This epochal invention was followed by Shockley’s bipolar junction transistor (BJT) in 1948. In 1945, Heinrich Welker patented for the first time a Junction Field Effect Transistor (JFET). A Japanese team formed by Y. Watanabe and professor Jun-Ichi Nishizawa of Tohoku University patented the Static Induction Transistor (SIT) in 1950. The device controlled current flow by means of the static induction or electrostatic field surrounding two opposed gates (it was conceived as a solid-state analog of the vacuum-tube triode, and the first SIT’s were produced in 1970 by several Japanese companies). In 1952 William Shockley presented theoretical aspects regarding the JFET structure and its operation. Then, the first JFET was produced as a practical device by George Clement Dacey and Ian Munro Ross from Bell Labs in 1953, under the supervision of William Shockley. In 1959, Mohamed M. Atalla and Dawon Kahng from Bell Labs invented the Metal Oxide Semiconductor Field Effect Transistor (MOSFET). -
Bio-MEMS Technologies and Applications
DK532X_C000.fm Page i Monday, November 13, 2006 7:24 AM Bio-MEMS Technologies and Applications EDITED BY Wanjun Wang • Steven A. Soper Boca Raton London New York CRC Press is an imprint of the Taylor & Francis Group, an informa business © 2007 by Taylor & Francis Group, LLC DK532X_C000.fm Page ii Monday, November 13, 2006 7:24 AM CRC Press Taylor & Francis Group 6000 Broken Sound Parkway NW, Suite 300 Boca Raton, FL 33487-2742 © 2007 by Taylor & Francis Group, LLC CRC Press is an imprint of Taylor & Francis Group, an Informa business No claim to original U.S. Government works Printed in the United States of America on acid-free paper 10 9 8 7 6 5 4 3 2 1 International Standard Book Number-10: 0-8493-3532-9 (Hardcover) International Standard Book Number-13: 978-0-8493-3532-7 (Hardcover) This book contains information obtained from authentic and highly regarded sources. Reprinted material is quoted with permission, and sources are indicated. A wide variety of references are listed. Reasonable efforts have been made to publish reliable data and information, but the author and the publisher cannot assume responsibility for the validity of all materials or for the conse- quences of their use. No part of this book may be reprinted, reproduced, transmitted, or utilized in any form by any electronic, mechanical, or other means, now known or hereafter invented, including photocopying, microfilming, and recording, or in any information storage or retrieval system, without written permission from the publishers. For permission to photocopy or use material electronically from this work, please access www. -
Device-Level Predictive Modeling of Extreme Electromagnetic Interference
University of New Mexico UNM Digital Repository Electrical and Computer Engineering ETDs Engineering ETDs Summer 7-15-2020 DEVICE-LEVEL PREDICTIVE MODELING OF EXTREME ELECTROMAGNETIC INTERFERENCE NISHCHAY H. SULE The University of New Mexico Follow this and additional works at: https://digitalrepository.unm.edu/ece_etds Part of the Electronic Devices and Semiconductor Manufacturing Commons, and the VLSI and Circuits, Embedded and Hardware Systems Commons Recommended Citation SULE, NISHCHAY H.. "DEVICE-LEVEL PREDICTIVE MODELING OF EXTREME ELECTROMAGNETIC INTERFERENCE." (2020). https://digitalrepository.unm.edu/ece_etds/492 This Dissertation is brought to you for free and open access by the Engineering ETDs at UNM Digital Repository. It has been accepted for inclusion in Electrical and Computer Engineering ETDs by an authorized administrator of UNM Digital Repository. For more information, please contact [email protected], [email protected], [email protected]. NISHCHAY H. SULE Candidate Electrical and Computer Engineering (ECE) Department This dissertation is approved, and it is acceptable in quality and form for publication: Approved by the Dissertation Committee: Dr. Payman Zarkesh-Ha , Chairperson Dr. Edl Schamiloglu Dr. Sameer Hemmady Dr. Daryl Beetner i DEVICE-LEVEL PREDICTIVE MODELING OF EXTREME ELECTROMAGNETIC INTERFERENCE by NISHCHAY HEMANT SULE B.S. in Electrical Engineering, The University of New Mexico, 2013 DISSERTATION Submitted in Partial Fulfillment of the Requirements for the Degree of Doctor of Philosophy Engineering The University of New Mexico Albuquerque, New Mexico July 2020 ii DEDICATION This work is dedicated to my parents and extended family in India, and the US, whose support, motivation, and love help guide me and push me forward to be a better version of myself. -
Memories in Computers Part 3: Flash Memories
112.pdf Memories in Computers—Part 3: Flash Memories A SunCam online continuing education course Memories in Computers Part 3: Flash Memories by Dr. William R. Huber, P.E. www.SunCam.com Copyright 2012 William R. Huber Page 1 of 50 112.pdf Memories in Computers—Part 3: Flash Memories A SunCam online continuing education course A. Nonvolatile Memory History The technological origin of nonvolatile memory was a little-noticed 1967 paper by Dawon Kahng and Simon Sze of Bell Labs. The authors proposed a floating gate structure capable of long-term storage of electrons and of controlling the conducting channel of an MOS transistor. Both a theoretical analysis and an actual fabricated device were reported.1 By adding an erase gate to the floating gate transistor of Kahng and Sze, Fujio Masuoka of Toshiba invented flash memory.2,3,4 In an ironic twist to the stereotype of, “The US invents and Japan produces,” Toshiba ignored Masuoka’s work and Intel quickly became the world leader in flash memory production.5 Descendants of Masuoka’s pioneer device appear in virtually every computer, MP3 player, camera, camcorder, video game console, thumb drive and other advanced electronic product made today. What distinguishes flash memory from other forms of nonvolatile memory? The term ‘flash’ historically had been used to describe a mode of programming or erasing an entire memory array at one time. Although designers soon made flash memories that were erasable by sections, the name stuck and has come to designate those electrically erasable programmable read only memories (EEPROMs) that are made with one- transistor cells rather than the two or more transistor cells of the low-density conventional EEPROM.6 Why is flash memory important? Here are the major reasons: Low cost—presently about 40% of the cost per bit of DRAM; High density—presently 8x as many bits per chip as DRAM; Nonvolatility—Unlike DRAM, flash memory retains its stored information when the power is turned off. -
Clean Room Design Standards and Energy Optimization (CREO)
CREO Clean Room Design Standards & Energy Optimization www.camfilfarr.com For further information please contact your nearest Camfil Farr office. Clean Air Solutions Clean Room Design Standards & Energy Optimzation Abstract 2 Clean 2 Camfil Solution Systems (CFSS) 3 - CREO (Clean Room & Energy Optimization) 3 - Software Analysis Tools 3 Theory 4 - Mass Flow Balance 4 - Particulate Balance 4 - Particulate Balance Equations 5 - Different Clean Room Systems 6 Air Handling Systems 7 - Recirculation & Reduction of Velocity 7 Life Sciences Industry Standards 8 - Clean Rooms 8 - EU GGMP 10 - Outdoor Particle Concentrations 11 - Internal Particle Concentration 11 - Start-up Concentration 12 Air Filters 13 - HVAC Air Filter Standards 14 Summary 15 Copyright Camfil 2012 The contents herein are not to be copied, reproduced, printed, published, posted, displayed, incorporated, stored in or scanned into a retrieval system or database, transmitted, broadcast, bartered or sold, in whole or in part without the prior express written permission of Camfil Unauthorised duplication is strictly prohibited and is an infringement of National and International Copyright laws. Page 1 Abstract Clean rooms today are high technology solutions A faster and efficient method is to use mathematical with high or very high demands on the air algorithms describing the relationship between the cleanliness level. Not only particulate matter but cleanliness and the most important variables in a also airborne molecular contaminants (AMC) are general model of a system. addressed in more and more applications. Therefore Camfil has developed several software applications it is important to estimate the level of air cleanliness to help the constructor/engineer in the cases of new production of, or reconstruction to compare different solutions and evaluate the of a clean room.