DOCSLIB.ORG

Oct. 18, 1960 L

Total Page：16

File Type：pdf, Size：1020Kb

Download full-text PDF Read full-text
Oct. 18, 1960 L Oct. 18, 1960 L. H. ENLOE 2,957,143 WIDEBAND TRANSISTOR AMPLIFIER Filed Sept. ll, 1959 2 Sheets-Sheet l s INVENTOR LOUIS H. ENLOE ATTORNEYs Oct. 18, 1960 L. H. ENLOE 2,957,143 WIDEBAND TRANSISTOR AMPLIFIER Filed Sept. 1, 1959 2 Sheets-Sheet 2 g S S. R S. w INVENTOR OU S H. ENOE "%-4- wear ATTORNEYS24-4) 2,957,143 United States Patent EPatented Oct. 18, 1960 2 quency of the transistor when the current gain thereof in a common emitter configuration substantially equals one. Under such conditions, the gain-bandwidth product 2,957,143 is fully independent of the internal and external emitter WDEBAND TRANSSOR AMPLIFEER fesistance so that gain may be exchanged for bandwidth by adjusting the external emitter resistance. Louissearch H. Enloe,Foundation, Holmdel, Tucson, N.J., Ariz.,assignor a tocorporation Arizona Re:of The addition of the external emitter resistance when Arizona properly proportioned in value makes the total effective emitter resistance (external plus internal resistance times Filed Sept. 11, 1959, Ser. No. 839,379 10 the common emitter, low frequency, short circuit current gain factor) so large compared to the impedance level 8 Claims. (C. 330-30) of any wideband interstage as to be neglectable, while the externally added emitter capacitance in conjunction with the internal associated capacitance reduces the ef This invention relates to wideband amplifiers employ 15 fective input capacity from, say, 50 pluf. down to, say, ing transistors as the amplifying elements, and in par 0.7 up.f. Under such conditions, the input circuit looks ticular to a transistorized distributed amplifier. like a pure capacitance, but in reality, there is an unavoid The conventional techniques of wideband amplifier de able so-called “base spreading' resistance in series there sign have been explored thoroughly in recent years. They with when a connection is made to the base electrode, have shown that there is an upper limit to the gain-band 20 due to the present day inability to make that connection width product associated with a given vacuum tube or non-resistive. It is because of that resistance that one transistor type, regardless of the complexity of the inter cannot actually place any component directly across the stage coupling networks. The limit is governed pri input capacitance, as one can the internal input capaci marily by shunt capacities, associated with the respective tance of a vacuum tube. However, by adding the parallel active device, across which a voltage must be developed. 25 RC emitter circuit as above-described, the series spread This places a definite limit on the bandwidth obtainable ing resistance combines with the effective input capacity by cascading single stage amplifiers, for if the desired to produce an input conductance which increases with overall bandwidth is greater than the gain-bandwidth the Square of frequency in the same manner as that of product of the individual stages, each stage attenuates in a vacuum tube at high frequencies, the transistor input stead of amplifying. 30 impedance raises considerably, and the gain is exchanged The vacuum tube distributed amplifier can be used to for bandwidth without decreasing the gain-bandwidth obtain amplification over bandwidths in excess of the product, i.e., that product remains approximately constant, gain-bandwidth product of its vacuum tube amplifying thereby greatly increasing the bandwidth over that pro sections. The individual sections are connected together vided for by transistorized prior art circuits. A plurality in such a manner that their input and output capacities 35 of such wideband transistor amplifiers may be employed form part of an artificial transmission line. Each sec as the amplifying elements with constant-K transmission tion amplifies the voltage wave propagating down the input lines in a distributed amplifier. line. The sections are arranged so that the amplified It is, therefore, one object of this invention to provide voltages are added in phase on the output transmission in a wideband amplifier at least one transistor situated in line. Since the voltages are combined by addition, the 40 a common emitter configuration with a parallel RC cir total amplification is equal to the sum of the section cuit serially connected to its emitter electrode, the time gains rather than the product. Amplification is then constant of the RC circuit being substantially equal to possible even though the gains of the individual sections the reciprocal of the angular frequency of the transistor are less than unity. when the common emitter configuration current gain of Although it might be expected that transistors could 45 that transistor is substantially equal to one. be directly substituted for the vacuum tubes in a con It is another object of this invention to employ the ventional distributed amplifier, it has been found that transistor circuit of the foregoing object in a distributed this cannot be the case with desirable results. For wide amplifier of the constant-K type. band distributed amplifiers the natural tendency would Constant-K type non-transistorized distributed ampli be to utilize the grounded or common base transistor con 50 fiers are well-known. However, following my discovery figuration because of its high cutoff frequency. However, of the above-mentioned wideband amplifier and its the low input impedance of such a configuration places unique incorporation into a constant-K distributed am severe limitations on the impedance level of the input plifier, I discovered a constant resistance distributed line. A somewhat higher input impedance can be ob amplifier after realizing that the base spreading or lead tained in the grounded or common emitter circuit, but 55 contact resistance in the input circuit of transistors in the bandwidth of this configuration is greatly reduced. the common emitter configuration could be employed it has been suggested that the bandwidth thereof can to advantage by its corporation into a filter section. be increased at the expense of gain, by a parallel resist The resulting substantially lossless network or filter sec ance-capacitor (RC) circuit connected in series with the tion has a characteristic constant impedance which is emitter electrode for emitter degeneration purposes. If 60 resistive rather than complex, and consequently is ter the collector barrier capacitive reactance is large com minated in a resistance without any intervening match pared to the load resistance, the voltage gain contains ing network. In addition, I discovered that a constant one zero and two poles in the finite s-plane. There is resistance filter section could be made for each tran then not only an increase in bandwidth at the expense sistor output so as to form a constant resistance output of gain, but also an increase in impedance. However, 65 transmission line for a distributed amplifier. the gain-bandwidth product is not independent of the in It is, therefore, another object of this invention to ternal and external emitter resistance. After consider provide a distributed amplifier with transistorized wide able work on this problem, I discovered that a transistor, band amplifiers, as aforementioned, with the input and when connected in the common emitter configuration, output transmission lines having a characteristic imped may be made to have substantially a reactive behavior if 70 ance which is a constant resistance. the time constant of the external emitter RC circuit is Still other objects of this invention will become appar substantially equal to the reciprocal of the angular fre ent to those of ordinary skill in the art by reference 2,957,148 - -- 3 4 to the following detailed description of the exemplary Each output stage or section of the amplifier of Fig embodiments of the apparatus and the appended claims. ure 1 includes two serially connected inductances 64, 66 The various features of the exemplary embodiments with the junction therebetween being coupled to the re according to the invention may be best understood with spective collector electrode 68. Since the effective out reference to the accompanying drawings, wherein: 5 put impedance of the transistor is capacitative, each out Figure 1 is a schematic drawing of a constant-K tran put or collector line filter, for example that within dash sistorized distributed amplifier; line 70, is effectively a T-type constant-K filter section. Figure 2 is a schematic drawing of a transistorized ... At the end remote from the termination of the input distributed amplifier with input and output transmission transmission line, i.e. at the left end of Figure 1, the lines of constant resistance; and 0. output transmission line is terminated in its charac Figure 3 is a modification of the distributed amplifier teristic impedance by resistor 72. This resistance is of Figure 2, the output transmission line being different. matched to the input impedance of the filter 70 by a half In Figure 1, there is illustrated a distributed amplifier -section series m-derived filter 74. At the output trans with N stages or sections as designated. The signal to mission line, another half section series m-derived filter be amplified is shown as having a source 10 whose 15 76 is employed between the terminating load 78 and the internal impedance is illustrated by the dotted resistor Nth section of the amplifier, the load being coupled to 2. This signal is applied across an input artificial filter 76 by a direct current blocking condenser 80. The transmission line comprising two conductors 14 and 16, characteristic impedance of load 78 is equal in value to the latter of which is shown grounded. The remote end the resistance value of resistor 72, and to the input of the input transmission line is terminated in its char 20 output impedance characteristic of each of the sectional acteristic impedance, for example by resistor 18, which collector line filters.
Load more

Recommended publications
  • Design of a Low Noise Distributed Amplifier with Adjustable Gain Control in 0.15 M Gaas PHEMT
    Vol. 33, No. 3 Journal of Semiconductors March 2012 Design of a low noise distributed amplifier with adjustable gain control in 0.15 m GaAs PHEMT Zhang Ying(张瑛), Wang Zhigong(王志功), Xu Jian(徐建), and Luo Yin(罗寅) Institute of RF- & OE-ICs, Southeast University, Nanjing 210096, China Abstract: A low noise distributed amplifier consisting of 9 gain cells is presented. The chip is fabricated with 0.15-m GaAs pseudomorphic high electron mobility transistor (PHEMT) technology from Win Semiconductor of Taiwan. A special optional gate bias technique is introduced to allow an adjustable gain control range of 10 dB. A novel cascode structure is adopted to extend the output voltage and bandwidth. The measurement results show that the amplifier gives an average gain of 15 dB with a gain flatness of 1 dB in the 2–20 GHz band. The noise figure is between 2 and 4.1 dB during the band from 2 to 20 GHz. The amplifier˙ also provides 13.8 dBm of output power at a 1 dB gain compression point and 10.5 dBm of input third order intercept point (IIP3), which demonstrates the excellent performance of linearity. The power consumption is 300 mW with a supply of 5 V, and the chip area is 2.36 1.01 mm2. Key words: distributed amplifiers; low noise; adjustable gain control; GaAs PHEMT DOI: 10.1088/1674-4926/33/3/035003 EEACC: 2570 1. Introduction structure is introduced to extend the output voltage and band- width. A special optional gate bias technique is used to allow With the rapid development of wireless and optical com- an adjustable gain control range of 10 dB.
    [Show full text]
  • Distributed Integrated Circuits: Wideband Communications for the 21St Century by Ali Hajimiri
    Distributed Integrated Circuits: Wideband Communications for the 21st Century by Ali Hajimiri lobal communications mitted per second (i.e., bit rate) G have rendered our world a determines the speed of a digital smaller, yet more interest- communications system. C.E. ing place, making it possi- Shannon, the founder of modern ble to exchange visions, ideas, information theory, proved that the goals, dreams—and PoKéMoN maximum achievable bit rate of a cards—across our small planet. digital communications system Modern communications systems, increases linearly with the available such as the internet and portable range of frequencies (i.e., channel wireless systems, have added new bandwidth) and logarithmically dimensions to an already complex with the signal-to-noise ratio. world. They make us aware of our Thus, three critical parameters, similarities and differences and give namely, bandwidth, signal power, us an opportunity to communicate and noise, are the most important with people we have never met parameters in determining the per- from places we have never been. formance of any given communica- The fusion of education with com- Ali Hajimiri tions system. munication is already bringing One of the more common about new levels of awareness, methods of increasing the band- accompanied by creative upheavals million) of reliable active (e.g., tran- width, and hence the bit rate, of in all aspects of modern life. sistors) and passive (e.g., intercon- any given system is to migrate to However, the ever-increasing nect) devices. Further, they are rela- higher operating frequencies. The demand for more connectivity tively inexpensive to incorporate maximum speed of operation in inevitably increases the complexity into mass-market products.
    [Show full text]
  • Breaking Bandwidth Limit: a Review of Broadband Doherty Power Amplifier Design for 5G
    1 Breaking Bandwidth Limit: A Review of Broadband Doherty Power Amplifier Design for 5G Gholamreza Nikandish, Member, IEEE, Robert Bogdan Staszewski, Fellow, IEEE, and Anding Zhu, Senior Member, IEEE I. INTRODUCTION [6]–[11]. However, there is no complete review on broadband HE next generation wireless network, 5G, is expected to design techniques for the DPA, an essential subject for 5G T provide ubiquitous connections to billions of devices as wireless transmitters. well as to unlock many new services with multi-Gigabit-per- In this paper, we present a comprehensive review and second data transmission. To meet ever increasing demands for critical discussion on bandwidth enhancement techniques for higher data rates and larger capacity, new modulation schemes the DPA proposed in the literature, in order to provide a have been developed and wider frequency bands, e.g., at mm- thorough understating of broadband design of DPA for high- wave, have been designated to 5G [1], [2]. Massive multi-input efficiency 5G wireless transmitters. The paper is organized multi-output (MIMO), that uses a large number of antennas at as follows. In Section II, we discuss the main bandwidth the transmitter and receiver, has been considered as one of the limitation factors. In Section III, we review various bandwidth key enabling technologies in 5G to improve data throughput enhancement techniques for the DPA, including modified load and spectrum efficiency [3]. These new application scenarios modulation networks, frequency response optimization, para- pose stringent requirements on the wireless transceiver front- sitic compensation, post-matching, distributed DPA, and dual- ends and call for special considerations at both circuit and input digital DPA.
    [Show full text]
  • Broadband Mm-Wave Signal Generation and Amplification In
    Broadband mm-Wave Signal Generation and Amplification in CMOS Using Synthetic Impedance by Pranav R Kaundinya Submitted to the Department of Electrical Engineering and Computer Science in partial fulfillment of the requirements for the degree of Master of Engineering in Electrical Engineering and Computer Science at the MASSACHUSETTS INSTITUTE OF TECHNOLOGY June 2015 ○c Massachusetts Institute of Technology 2015. All rights reserved. Author................................................................ Department of Electrical Engineering and Computer Science May 22, 2015 Certified by. Ruonan Han Assistant Professor Thesis Supervisor Accepted by........................................................... Albert R. Meyer Chairman, Masters of Engineering Thesis Committee 2 Broadband mm-Wave Signal Generation and Amplification in CMOS Using Synthetic Impedance by Pranav R Kaundinya Submitted to the Department of Electrical Engineering and Computer Science on May 22, 2015, in partial fulfillment of the requirements for the degree of Master of Engineering in Electrical Engineering and Computer Science Abstract This thesis explores the concept of synthesizing tunable impedances by establishing the appropriate phase relationship between the drain voltage and drain current of a MOS transistor. A high frequency, wide tuning range 105-121GHz oscillator and a small-footprint 20-40GHz oscillator using synthetic resonance are presented. The concept of impedance synthesis is also used to generate a novel frequency-adaptive loss compensation scheme for distributed amplifiers which is shown to improve the bandwidth by 30%. The performance of these circuits was analyzed and simulated on a TSMC 65nm bulk CMOS process. Thesis Supervisor: Ruonan Han Title: Assistant Professor 3 4 Acknowledgments Firstly, I would like to thank my advisor Professor Ruonan Han for giving me an interesting research area to explore and encouraging me throughout.
    [Show full text]
  • The Vacuum Tube Distributed Amplifier
    The vacuum tube distributed amplifier I want to spend few words about a smart solution found in the past to the apparently insoluble problem of building very wide band amplifiers. When the frequency raises, the bandwidth of any conventional amplifiers is limited by its gain decrease, until the gain of each stage approaches the unity. William Percival in 1936 proposed the architecture of the distributed amplifier to overcome this limit: two or more tubes are connected in such a way to have their anode currents, and hence their outputs, summed in the load impedance, although the parasitic capacitors are not paralleled. Figure 1 illustrates this principle. Grids and plates of the vacuum tubes are connected to the intermediate taps of two transmission lines, formed by the inductances Lg and Lp and by the parasitic capacitance of the tubes themselves, Cg and Cp. The two lines give the same phase delay on the grid and on the anode of each tube. Consequently the output of each tube appears in the plate line exactly in phase with the output of other tubes, summing all together, after a time equal to the propagation delay of the plate line, in the output load impedance Zl. If the output impedance matches the plate line impedance Zp, then the output voltage will be 1/2(eg*gm*Zl)*n, where n is the number of the tubes. The voltage gain of the amplifier with n tubes is therefore 1/2(gm*Zl)*n. Making n great enough, or using the right quantity of tubes, the gain of the amplifier can be made as high as needed, even when the gain of each tube, gm, is lower than unity.
    [Show full text]
  • Broadband Traveling Wave Distributed Amplifier (TWDA) with Variable Gain by Control the Source Bulk Voltage
    International Conference on Electrical, Electronics and Communication Engineering (ICEEC'2012) September 8-9, 2012 Bangkok (Thailand) Broadband Traveling Wave Distributed Amplifier (TWDA) with Variable Gain By Control the Source Bulk Voltage Saeed.Zakeri, Dr. Ebrahim.Abiri, Hefzollah.Mohammadian Abstract— This paper begins with a review of elements of the II. MICROWAVE FREQUENCIES AND ITS APPLICATIONS distributed amplifier and with goal of to design an amplifier with a distributed structure with appropriate parameters has ended .In this TABLE I paper to build the amplifier also helps Structure designed to help and DIVIDES THE FREQUENCY BAND more advanced technology has been used. Now that the parameters at high frequencies with good scattering and other quality attributes surveyed in a microwave amplifier, including power, input and output VSWR values and noise and etc give us. In the design of this amplifier is used two transmission lines that one of them, connected to the gate of several transistors and the other one is connected to the drain of the same transistors. This transmission lines acts like a filter Which Gate – source capacitors and the inductors (that we have designed) create the Gate transmission line Filter. Also drain – source capacitors and the inductors (that we have designed it) create the drain transmission line TABLE II Filter .Finally we will arrive the desired result with Study and DIVISION BAND MICROWAVE FREQUENCIES analysis of whole network and using simulation results with calculate the parameters of amplifiers. Keywords— Scattering Parameters, Vswr, Available Power, Distributed Structure. I. INTRODUCTION IGH frequency circuits and techniques used in H communication systems have grown dramatically in recent years.
    [Show full text]
  • Distributed Power Amplifiers for Software Defined Radio Applications
    Distributed Power Amplifiers for Software Defined Radio Applications Von der Fakultät für Elektrotechnik und Informationstechnik der Rheinisch-Westfälischen Technischen Hochschule Aachen zur Erlangung des akademischen Grades eines Doktors der Ingenieurwissenschaften genehmigte Dissertation vorgelegt von Narendra Kumar, M.Sc B.E(Hons) aus Penang, Malaysia Berichter: Univ.-Prof. Dr.-Ing. Rolf H. Jansen Univ.-Prof. Dr.-Ing. Dirk Heberling Univ.-Prof. Ernesto Limiti Tag der mündlichen Prüfung: 23. Mai 2011 Diese Dissertation ist auf den Internetseiten der Hochschulbibliothek online verfügbar i Acknowledgements I would not be able to complete this thesis without the support of numerous individuals and institutions e.g. Prof. Dr.-Ing. Rolf H. Jansen (RWTH Aachen University, Germany), Bob Stengel (Motorola Labs, Florida, US), Chacko Prakash (Motorola Research Center, Malaysia), Prof. Ernesto Limiti (University Roma Tor Vergata, Italy), Prof. Claudio Paoloni (University Roma Tor Vergata, Italy), Prof. Juan-Mari Collantes (University of Basque Country, Spain), Prof. Yarman Siddik (Istanbul University, Turkey), Thomas Chong ((Motorola Research Center, Malaysia), Dr. Vitaliy Zhurbenkho (Technical University Denmark, Denmark). I would like to express my special gratitude to Prof. Dr.-Ing. Rolf H. Jansen, the head of the Chair of Electromagnetic Theory (ITHE), RWTH Aachen University, for giving me the opportunity and the freedom to complete my Ph.D research under his supervision. Also, I would like to thank him for supporting me with the insight in academic aspects and the fruitful discussions. I am grateful to Prof. Dr.-Ing. Dirk Heberling to be co-referee and Prof. Ernesto Limiti as an external examiner for my thesis examination. In addition, I am grateful to Motorola Education Assistance Board (Lee SiewYin, Fam FookTeng, Dr.
    [Show full text]
  • A Review of Advanced CMOS RF Power Amplifier Architecture Trends
    electronics Review A Review of Advanced CMOS RF Power Amplifier Architecture Trends for Low Power 5G Wireless Networks Aleksandr Vasjanov 1,2,* and Vaidotas Barzdenas 1,2 1 Department of Computer Science and Communications Technologies, Vilnius Gediminas Technical University, 10221 Vilnius, Lithuania; [email protected] 2 Micro and Nanoelectronics Systems Design and Research Laboratory, Vilnius Gediminas Technical University, 10257 Vilnius, Lithuania * Correspondence: [email protected]; Tel.: +370-5-274-4769 Received: 15 September 2018; Accepted: 19 October 2018; Published: 23 October 2018 Abstract: The structure of the modern wireless network evolves rapidly and maturing 4G networks pave the way to next generation 5G communication. A tendency of shifting from traditional high-power tower-mounted base stations towards heterogeneous elements can be spotted, which is mainly caused by the increase of annual wireless users and devices connected to the network. The radio frequency (RF) power amplifier (PA) performance directly affects the efficiency of any transmitter, therefore, the emerging 5G cellular network requires new PA architectures with improved efficiency without sacrificing linearity. A review of the most promising reported RF PA architectures is presented in this article, emphasizing advantages, disadvantages and concluding with a quantitative comparison. The main scope of reviewed papers are PAs implemented in scalable complementary metal–oxide–semiconductor (CMOS) and SiGe BiCMOS processes with output powers suitable for portable wireless devices under 32 dBm (1.5 W) in the low- and high- 5G network frequency ranges. Keywords: power amplifier; architecture; radio frequency; wireless; network; 5G; trends 1. Introduction The first most primitive radio transmitter that was used for telegraphy was developed in the early 1890s by Guglielmo Marconi.
    [Show full text]
  • A CMOS Distributed Amplifier with Distributed Active Input Balun Using
    IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 60, NO. 5, MAY 2012 1331 A CMOS Distributed Amplifier With Distributed Active Input Balun Using GBW and Linearity Enhancing Techniques Amin Jahanian, Member, IEEE, and Payam Heydari, Senior Member, IEEE Abstract—ACMOSdistributedamplifier (DA) with distributed transmission lines (t-lines) to improve efficiency for power am- active input balun is presented that achieves a gain-bandwidth plifiers. In [6], t-line tapering and -derived terminations are product of 818 GHz, while improving linearity. Each cell used in a multistage DA to improve BW. A distributed low- within the DA employs dual-output two-stage topology that im- proves gain and linearity without adversely affecting bandwidth noise amplifier (DLNA) is designed for minimum noise figure (BW) and power. Comprehensive analysis and simulations are (NF) for ultra-wideband (UWB) applications in [7]. Reference carried out to investigate gain, BW, linearity, noise, and stability [13] uses differential stages, incorporating cross-connected of the proposed cell, and compare them with conventional capacitive neutralization, distributed along nonuniform down- cells. Fabricated in a 65-nm low-power CMOS process, the sized artificial lines to improve BW. A DA with gain stages 0.9-mm DA achieves 22 dB of gain and a of 10 dBm, while consuming dc power of 97 mW from a 1.3-V supply. A distributed comprising input emitter followers and output cascode stages is balun, designed and fabricated in the same process, using the implementedinanSiGebipolartechnology in [14]. same topology achieves a BW larger than 70 GHz and a gain Besides distributed amplification, many broadband amplifiers of 4 dB with 19.5-mW power consumption from 1.3-V supply.
    [Show full text]
  • Broadband Microwave Distributed Amplifier
    Broadband Microwave Distributed Amplifier KEVIN BOWERS and PATRICK RIEHL Abstract—We present an analysis of distributed amplifiers II. DISCRETE TRANSMISSION LINES suitable for use in the microwave regime. From this we In order to derive design formulae for a FET DA, evaluate several designs using ideal components and the UC- Berkeley 217 GaAs FET. Alterations to the basic design we must first consider propagation of waves on discrete including the use of CASCODE and CASCODE gain cells and transmission structures. Alternative treatements can be 4 the use of series capacitors on the gate lines are discussed. We found (Pozar, op. cit. and in ). Consider the following implement a final design using microstrip components. The 5- circuit (Z and Y are arbitrary complex impedances and all stage design achieves 19.4 dB of power gain (+/- 1.2 dB) from voltages and currents are phasors): 0.1 to 14.3 GHz. Reflected power at the input and output from loads matched to 50 Ohms are all below –20 dB over the in-1 in in+1 in+2 bandwidth of the device, as is power transmitted from the Z/2 Z/2 Z/2 Z/2 Z/2 Z/2 output to the input. The device is stable for broad range of + + + + + Vn-1 Y Vn Vy Y iy Vn+1 Y Vn+2 input and output loads. A novel matching network has been - - - - - designed to minimize reflections along the gate and drain lines d over all frequencies and eliminate resonant peaks that are a potential cause of instability externally. Measurements suggest Applying Kirchoff’s laws to the circuit we arrive at the the design is internally stable as well.
    [Show full text]
  • Design of a Broad-Band Distributed Amplifier And
    DESIGN OF A BROAD-BAND DISTRIBUTED AMPLIFIER AND DESIGN OF CMOS PASSIVE AND ACTIVE FILTERS DALPATADU K. RADIKE SAMANTHA Beng (Hons), NUS NATIONAL UNIVERSITY OF SINGAPORE 2011 DESIGN OF A BROAD-BAND DISTRIBUTED AMPLIFIER AND DESIGN OF CMOS PASSIVE AND ACTIVE FILTERS DALPATADU K. RADIKE SAMANTHA Beng (Hons), NUS A THESIS SUBMITTED FOR THE DEGREE OF MASTER OF ENGINEERING DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING NATIONAL UNIVERSITY OF SINGAPORE 2011 ACKNOWLEDGEMENTS The work described in this thesis could not have been accomplished without the help and support of many individuals. First of all I would like to give my deepest gratitude to my supervisor, Assistant Professor Koen Mouthaan, for his guidance and encouragement throughout the two years. He helped me to overcome difficult problems whenever I got stuck during this period of time. Other than the academic progress he also helped me in my personal growth during the past two years. I would also like to thank Mdm Lee Siew Choo, Mdm Guo Lin and Mr Sing for their help in the fabrication and the measurement of the microwave circuits during the past two years. Also I would like to thank Mdm Zheng for her technical support. I am also thankful to all the friends in the MMIC lab who helped me during the last two years. I am truly grateful to Li Yong Fu, Hu Zijie, Azadeh Taslimi and Hu Feng for their help and technical support at various stages of the project. Also I would like to thank my brother Sandun Dalpatadu for providing support during the thesis writing.
    [Show full text]
  • Design, Analysis and Simulation of a Linear Phase Distributed Amplifier
    Journal of Communication Engineering, Vol. 8, No. 1, January-June 2019 125 Design, Analysis and Simulation of a Linear Phase Distributed Amplifier Hossein Ghani and Mahmoud Mohammad-Taheri School of Electrical and Computer Engineering, Faculty of Engineering, University of Tehran, Tehran, Iran, [email protected], [email protected] Corresponding author: Mahmoud Mohammad-Taheri Abstract- In this paper a new method for the design of a linear phase distributed amplifier in 180nm CMOS technology is presented. The method is based on analogy between transversal filters and distributed amplifiers topologies. In the proposed method the linearity of the phase at frequency range of 0-50 GHz is obtained by using proper weighting factors for each gain stage in cascaded amplifier topology. These weighting factors have been extracted using MATLAB software. Finally, by plotting the frequency response of the amplifier resulted from MATLAB code and also simulation from ADS, the phase linearity of the designed amplifier is shown. Index Terms- Distributed Amplifier; Group delay; Transversal Filter; Linear phase; Weighting I. INTRODUCTION In the design of optical receiver, the phase linearity of the pre-amplifier is a main requirement in order to avoid intersymbol interference. Amplifiers used in these receivers should be also wideband. Considering these two main requirements, the distributed amplifiers could be a good candidate as the bandwidth of these amplifiers is theoretically infinite if one does not take into account the transmission line loss. In order to use a distributed amplifier (DA) as a linear phase amplifier we should find an analogy between DA and a transversal filer which has linear phase frequency response.
    [Show full text]