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Broadband Traveling Wave Distributed Amplifier (TWDA) with Variable Gain by Control the Source Bulk Voltage

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Broadband Traveling Wave Distributed Amplifier (TWDA) with Variable Gain by Control the Source Bulk Voltage International Conference on Electrical, Electronics and Communication Engineering (ICEEC'2012) September 8-9, 2012 Bangkok (Thailand) Broadband Traveling Wave Distributed Amplifier (TWDA) with Variable Gain By Control the Source Bulk Voltage Saeed.Zakeri, Dr. Ebrahim.Abiri, Hefzollah.Mohammadian Abstract— This paper begins with a review of elements of the II. MICROWAVE FREQUENCIES AND ITS APPLICATIONS distributed amplifier and with goal of to design an amplifier with a distributed structure with appropriate parameters has ended .In this TABLE I paper to build the amplifier also helps Structure designed to help and DIVIDES THE FREQUENCY BAND more advanced technology has been used. Now that the parameters at high frequencies with good scattering and other quality attributes surveyed in a microwave amplifier, including power, input and output VSWR values and noise and etc give us. In the design of this amplifier is used two transmission lines that one of them, connected to the gate of several transistors and the other one is connected to the drain of the same transistors. This transmission lines acts like a filter Which Gate – source capacitors and the inductors (that we have designed) create the Gate transmission line Filter. Also drain – source capacitors and the inductors (that we have designed it) create the drain transmission line TABLE II Filter .Finally we will arrive the desired result with Study and DIVISION BAND MICROWAVE FREQUENCIES analysis of whole network and using simulation results with calculate the parameters of amplifiers. Keywords— Scattering Parameters, Vswr, Available Power, Distributed Structure. I. INTRODUCTION IGH frequency circuits and techniques used in H communication systems have grown dramatically in recent years. One of the circuits used in high frequency circuits are microwave amplifiers. This type of construction Applications are very large range of microwave signals, has a variety of amplifiers are high. And manufacture of some of which include: advanced components and technologies are developed. Amplifiers with wide bandwidth in the field of microwaves A. Radars (with a very large family and a wide range can be made by integrated or hybrid technology will be of demand) implemented. General infrastructure systems such as the fields B. Point to point multi-channel radio of microwave, optical communications, Instrumentation and communications (microwave radio) electronic warfare are amplifiers. One of the broadband C. Radio communication systems (fixed and mobile) amplifiers are distributed amplifiers and These amplifiers have D. Microwave image distribution systems / mm a relatively wide bandwidth and low noise characteristics and (MVDS) their output is satisfactory. E. Transmitter - receiver for fiber-optic microwave F. Microwave Instrumentation G. Local area networks (wireless) Saeed Zakeri was with Technical Junior College of Minab, Iran (Szakrey @yahoo.com). differential method disadvantages to some extent. Dr. Ebrahim Abiri was with Shiraz University of technology (SUTECH), Shiraz, Iran, ([email protected] ). Hefzollah Mohammadian was with Azad University of Bushehr. He is now with the Department of Instrument, South Pars Gas Complex, Iran. ([email protected]). 15 International Conference on Electrical, Electronics and Communication Engineering (ICEEC'2012) September 8-9, 2012 Bangkok (Thailand) III. TRAVELING WAVE DISTRIBUTED AMPLIFIER includes a capacitor Cgdp the property and gate and drain and (TWDA) source terminals of the capacitor and the capacitance between the capacitive property Cdsp that the property Cgsp A. characteristics of a transistor as an active part in capacitance between gate and source terminals are. The value distributed amplifiers of this capacitor is small and depends on the type of Hj-Fet a unilateral equivalent circuit in Figure.1 is shown as transistors are packed. The small signal equivalent circuit a simple transistor. Gate and drain terminals of respectively elements, for example, Hj-Fet transistor NE32584C numbers parasitic capacitors are a Cgs and Cds. Cgs feedback capacitor in Table.I NEC factory has been shown [1,8]. as shown in point is China and usually small due to the transistor model, it is ignored. The transfer conductance of TABLE III transistor (gm), a voltage-controlled current source is that THE EQUIVALENT CIRCUIT PARAMETERS OF TRANSISTORS HJ-FET (NE32584C) Current proportional to the voltage Vgs (Voltage across the capacitor Cgs) at this terminal provides. B. Available power gain in Traveling Wave Distributed Amplifier (TWDA) Figure.3 shows the circuit of a conventional distributed Fig.1 A simplified model for small signal transistors Hj-FET amplifier (TWDA), which are composed of four identical active elements and are parallel. Each stage of the amplifier The equivalent circuit for small signal Fet is much more can be considered as a T network, the networks of T are complex. For example, Small signal equivalent circuit of Hj- parallel with each other. [1] Fet show in Figure.2 Elements that are enclosed with the Chinese point lines, the intrinsic transistor elements and the remaining parts or external elements are parasitic. [1] Fig.3 Structure of a TWDA consists of four pieces Figure.4 is a simplified model shows TWDA with n stage. No Fig.2 complete model of a small signal Hj-FET transistor losses have been considered as transistors. [1] Resistors Rg, Rd and Rs, are respectively, indicating the resistance of wires connected to the terminal gate, drain and source and Inductors Lg, Ld, and Ls, are respectively, indicating the property of the inductor wires connected to the gate terminal, drain and source. Cgd capacitance of the feedback gain from output to input or the so-called reverse or isolated output - input (S12) is. This amount represents the capacitance of the transistor is unilateral or bilateral. If the capacitor Cgd is small so that the transistor acts as a one-way Fig.4 is a simplified model shows TWDA with n stage and if its value is large, the transistor will work bilaterally. Format and packaged transistor parasitic capacitors is also. Each transistor includes Cgs, Cds and In this flow is Capacitance between the drain terminals of the capacitor considered. This simplifies the analysis of other circuit 16 International Conference on Electrical, Electronics and Communication Engineering (ICEEC'2012) September 8-9, 2012 Bangkok (Thailand) elements is ignored. Similarly, artificial transmission lines are assumed to be no losses (The inductors of the transmission lines and Lg and Ld are made at this transmission line).Gate and drain line characteristic impedances Zg and Zd, respectively, have been terminated. External signal source and load impedance can be assumed that Zg and Zd be a pure real part (Usually 50 ohms). Relations with the simplification available power obtained as follows: The above statement can simply assume that βg → βd and x → 0 and the function Sin x we mail to x.So the power of Fig.5 traveling wave distributed amplifier gain as a function of the distributed amplifiers can be stating as follows: number of active stage IV. SIMULATION OF A TRAVELING WAVE DISTRIBUTED AMPLIFIER SIMULATION OF A TRAVELING WAVE The above equation is of the order value that distributed DISTRIBUTED AMPLIFIER amplifiers gains (up to cutoff frequency transmission lines) Figure.6 Structure of a traveling wave MESFET distributed are independent of frequency. It seems that the above equation amplifier to boost the number NE33284a is used to show .In can be with increasing n (number of active components) designing this amplifier Micro strip transmission lines (for distributed amplifier direct gain for a fixed bandwidth is connection between amplifier and inductor needed to increased. But this is true only for no losses of transmission implement the distributed amplifier) is used. To improve lines. Actually due the loss gate and drain lines ,distributed impedance matching amplifier input and output of a filter is amplifiers Direct gain with increasing n as will not be large used. uniformly. The exact expression for the direct gain of distributed amplifier (gate and drain transmission lines with consideration of the loss) is as follows:[10,11] In the above expression and Ad and Ag are, respectively, indicating the losses of gate and drain lines. Optimum number of active components (Nop) that can be best achieved in a specified bandwidth is as follows. [12] Effect of stage number on gain and bandwidth on the distributed amplifier is shown in the figure below. [1] This analysis shows that gain in traveling wave distributed Fig. 6 S-Parameter simulation results of conventional distributed amplifiers (TWDA) by increasing the number of active stage amplifier will improve but increasing the number n greater than 5 increasing active stage not much effect in the distributed amplifier gain. In general, increasing the number of stage amplifiers, bandwidth uniform response will be corrupted. Actually, by optimizing the transmission line terminals Can little improved uniformity of distributed amplifier bandwidth. Fig.7 Simulation results of output noise characteristic and least characteristic of conventional distributed amplifier noise 17 International Conference on Electrical, Electronics and Communication Engineering (ICEEC'2012) September 8-9, 2012 Bangkok (Thailand) Fig.11 Structure and the Physics of small signal MOSFET model Fig.8 Simulation results of conventional distributed amplifier input and output VSWR Fig.12 Gain small signal amplifier
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