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Zero-Static-Power Nonvolatile Logic-In-Memory Circuits for Flexible Republic of Korea gene therapy in vitro and in vivo. Nano Research 1 DOI 10.1007/s12274-017-1449-y Nano Res Zero-static-power nonvolatile logic-in-memory circuits for flexible electronics Byung Chul Jang1, Sang Yoon Yang1, Hyejeong Seong2, Sung Kyu Kim3, Junhwan Choi2, Sung Gap Im2, and Sung-Yool Choi1 () Nano Res., Just Accepted Manuscript • DOI: 10.1007/s12274-017-1449-y http://www.thenanoresearch.com on Jan. 03, 2017 © Tsinghua University Press 2016 Just Accepted This is a “Just Accepted” manuscript, which has been examined by the peer-review process and has been accepted for publication. A “Just Accepted” manuscript is published online shortly after its acceptance, which is prior to technical editing and formatting and author proofing. 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To cite this manuscript please use its Digital Object Identifier (DOI®), which is identical for all formats of publication. 2 Nano Res TABLE OF CONTENTS (TOC) Zero-Static-Power Nonvolatile Logic-in-Memory Circuits for Flexible Electronics Byung Chul Jang1, Sang Yoon Yang1, Hyejeong Seong2, Sung Kyu Kim3, Junhwan Choi2, Sung Gap Im2, and Sung-Yool Choi1,* 1School of Electrical Engineering, Graphene/2D Materials Research Center, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea 2Department of Chemical and Biomolecular Engineering, Graphene/2D Materials Research Center, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea Flexible nonvolatile logic-in-memory circuit enabling normally-off-computing can be implemented using pV3D3-memristor 3Department of Materials Science and Engineering, Korea array. For the first time, we experimentally demonstrate our Advanced Institute of Science and Technology (KAIST), implementation of MAGIC-NOT and -NOR gates during multiple Daejeon 34141, Korea cycles and even under bent conditions. Other functions, such as OR, AND, NAND, and a half adder, are also realized within crossbar array. Author 1, http://mndl.kaist.ac.kr Author 2, http://ftfl.kaist.ac.kr Author 3, http://hrtem.kaist.ac.kr 2 3 Nano Res Nano Res DOI (automatically inserted by the publisher) Research Article Zero-Static-Power Nonvolatile Logic-in-Memory Circuits for Flexible Electronics Byung Chul Jang1, Sang Yoon Yang1, Hyejeong Seong2, Sung Kyu Kim3, Junhwan Choi2, Sung Gap Im2, and 1 Sung-Yool Choi () 1School of Electrical Engineering, Graphene/2D Materials Research Center, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea 2Department of Chemical and Biomolecular Engineering, Graphene/2D Materials Research Center, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea 3Department of Materials Science and Engineering, Korea Advanced Institute of Science and Technology (KAIST), Daejeon 34141, Korea Received: day month year / Revised: day month year / Accepted: day month year (automatically inserted by the publisher) © Tsinghua University Press and Springer-Verlag Berlin Heidelberg 2011 ABSTRACT Flexible logic circuits and memory with ultra-low static power consumption are in great demand for battery-powered flexible electronic systems. Here, we demonstrate that a flexible nonvolatile logic-in-memory circuit enabling normally-off computing can be implemented using a poly(1,3,5-trivinyl-1,3,5-trimethyl cyclotrisiloxane) (pV3D3)-memristor array. Albeit memristive logic-in-memory circuits have been previously reported, the requirements of additional components and large variation of memristors have limited demonstrations to simple gates within a few operation cycles on only rigid substrate. Using memristor-aided logic (MAGIC) architecture requiring only memristors and pV3D3-memristor with good uniformity on flexible substrate, for the first time, we experimentally demonstrate our implementation of MAGIC-NOT and -NOR gates during multiple cycles and even under bent conditions. Other functions, such as OR, AND, NAND, and a half adder, are also realized by combinations of NOT and NOR gates within crossbar array. This research advances the development of novel 3 4 Nano Res computing architecture with zero static power consumption for battery-power flexible electronic systems. KEYWORDS memristor, memristive logic circuit, flexible nonvolatile logic-in-memory circuit, normally-off-computing, memristor-aided logic (MAGIC) architecture ———————————— Address correspondence to Sung-Yool Choi, [email protected] 4 5 Nano Res networks, and analog circuits [17-19]. In particular, 1. Introduction the memristive logic gates can perform a nonvolatile logic-in-memory circuit, enabling normally-off Flexible electronics with a stylish form factor, such computing with the static power dissipation of 0 W as smart bands, curved TV, and so on, are now [20-22]. They furthermore enable development of an integrated in our daily lives. For realization of advanced computer architecture that is different multifunctional flexible electronic systems, various from the conventional von Neumann architecture electronic devices, such as logic gates, circuits, with its physically separate memory and logic memory, sensors, radio frequency identification circuits that suffer from the data transfer rate (RFID), and actuators have been developed onto a between the central processing unit and memory flexible platform [1-5]. In particular, developments [23]. for flexible logic and memory devices are essential A representative approach of the memristive on account of their roles of information processing, nonvolatile logic-in-memory circuit is the storage, and communication with external devices. memristor-based material implication (IMP) logic Furthermore, it is necessary to develop gate, in which resistance is used as the logical state battery-powered flexible devices with ultra-low [17,24,25]. The input and output of the logic gates are stored on memristors within the crossbar array, and static power dissipation of approximately 5 nW (Pstatic the IMP and FALSE operations (where the FALSE = VLowest,DD IDeep suspend) based on the 2015 operation always yields the logical ‘0’) form basic International Technology Roadmap for Boolean functions. This architecture, however, Semiconductors (ITRS) [6] because they have limited requires two voltage pulses to perform logic batteries and long standby periods. operations. It furthermore requires an additional Several research groups have developed a variety of resistor within each row of the crossbar, which flexible memories and logic gates based on the necessitates a complicated control circuit design and organic thin-film transistor (OTFT). However, these dissipates high power. Moreover, the output result is OTFT-based devices still face significant challenges stored not by a dedicated output memristor, but by in the development of high-density devices with one of the inputs. high performance and low power consumption. Another memristive nonvolatile logic-in-memory These challenges result from the inherent material circuit, memristor-aided logic (MAGIC) architecture, properties, incompatible lithography processes, and was theoretically proposed [26]. Unlike IMP logic, volatile complementary logic circuits [7-9]. memristors for the input and output are separated, Compared to devices based on OTFT, the and output is written to a dedicated memristor. polymer-based memristor or memristive device, Without an additional resistor, a single voltage pulse which is a nanoscale two-terminal passive device, is only required to operate logic gates. The MAGIC has been well known as a promising flexible architecture is thereby advantageous over IMP logic nonvolatile memory device owing to its simple in terms of latency and energy consumption. structure, fast switching speed, high packing density, excellent flexibility, and low operating voltage Specifically, it is 2.4 times faster than IMP logic and [10-13]. Memristors [14] and memristive devices [15] consumes 33.7% of the total energy consumed in IMP were predicted by Chua in 1971 as the fourth basic logic [27]. Furthermore, the simple architecture of circuit element, which was later demonstrated by a MAGIC can enable a memristive nonvolatile Hewlett-Packard (HP) laboratory team in 2008 [16]. logic-in-memory circuit to be reliably implemented The unique property of the memristor is the on flexible substrate over IMP logic. However, the variation of its nonvolatile resistance state depending large device-to-device variation within the crossbar on the current or voltage history across it. While array may result in the implementation of simple numerous research groups and semiconductor gates with few cycles of operation [17,22,28]. This industries have developed memristors primarily for leads to applications of IMP logic gate on only rigid memory applications, memristors can also be used as substrate and hinders MAGIC architecture from functional blocks
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