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Covert Gates: Protecting Integrated Circuits with Undetectable Camouflaging

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Covert Gates: Protecting Integrated Circuits with Undetectable Camouflaging Covert Gates: Protecting Integrated Circuits with Undetectable Camouflaging Bicky Shakya, Haoting Shen, Mark Tehranipoor and Domenic Forte ECE Department, University of Florida [email protected],{htshen,tehranipoor,dforte}@ece.ufl.edu Abstract. Integrated circuit (IC) camouflaging has emerged as a promising solution for protecting semiconductor intellectual property (IP) against reverse engineering. Existing methods of camouflaging are based on standard cells that can assume one of many Boolean functions, either through variation of transistor threshold voltage or contact configurations. Unfortunately, such methods lead to high area, delay and power overheads, and are vulnerable to invasive as well as non-invasive attacks based on Boolean satisfiability/VLSI testing. In this paper, we propose, fabricate, and demonstrate a new cell camouflaging strategy, termed as ‘covert gate’ that leverages doping and dummy contacts to create camouflaged cells that are indistinguishable from regular standard cells under modern imaging techniques. We perform a comprehensive security analysis of covert gate, and show that it achieves high resiliency against SAT and test-based attacks at very low overheads. We also derive models to characterize the covert cells, and develop measures to incorporate them into a gate-level design. Simulation results of overheads and attacks are presented on benchmark circuits. Keywords: IP Protection · Camouflaging · Reverse Engineering · SEM Imaging · ATPG · SAT 1 Introduction Reverse engineering of integrated circuits (ICs) is a common practice in the semiconductor industry. It is routinely used for (i) failure analysis, defect identification, and fault diagnosis, (ii) detection of counterfeit ICs and (iii) analysis of competitor IP (e.g., technology node or process analysis, and checking whether patents were infringed) [TJ07][TJ11]. While reverse engineering for such purposes is a legal and acceptable practice, it can also be done with malicious intent. For example, a reverse engineer may obtain the complete gate-level netlist of the circuit through reverse engineering of an IC’s physical layout. By doing so, the reverse engineer could infringe on the owner’s intellectual property (IP), by incorporating the extracted IP core into his or her own design or by selling it to third parties. The illicitly obtained IP could also be used to created cloned ICs and electronic systems [GHD+14][MBT17]. Further, an untrusted semiconductor foundry could also use reverse engineering to fully understand the functionality of a design and insert a targeted, stealthy hardware Trojan [TK10][BRPB13]. Traditional IC reverse engineering involves four distinct phases, namely: 1. Decapsulation involves removing the IC packaging using corrosive chemicals and/or abrasion (e.g., by polishing the package surface). 2. Delayering is the layer-by-layer removal of the metal interconnects between logic gates, polysilicon traces as well as the transistor layers. The insulating layer between different metal layers is also removed. Dry or wet etching (i.e., removing specific materials via chemical reactions) is employed for this purpose. Licensed under Creative Commons License CC-BY 4.0. IACR Transactions on Cryptographic Hardware and Embedded Systems ISSN 2569-2925, Vol. 2019, No. 3, pp. 86–118 DOI:10.13154/tches.v2019.i3.86-118 Bicky Shakya, Haoting Shen, Mark Tehranipoor and Domenic Forte 87 ? ? (a) (b) ? Figure 1: (a) Original gate-level netlist and (b) Netlist containing camouflaged cells obtained after reverse engineering. IN1 IN1 Y Y IN2 IN2 (a) Regular Camouflaging IN1 Y IN1 IN2dummy Y IN1 IN1 Y IN2 Y IN2 (b) Proposed CamouflagingIN3dummy Figure 2: (a) Regular camouflaged gate configurable based on dummy contacts, threshold voltage, or dopant polarity; (b) Proposed camouflaging that introduces dummy inputs. 3. Imaging is used to capture the IC layout at each layer after delayering. Scanning electron microscopy (SEM) is used for this purpose to capture high resolution images of micro/nano-scale features. 4. Post-processing includes stitching of imaged layers after image processing, identi- fying primitives (e.g., logic gates) and obtaining a gate-level netlist, with associated connections between them. IC camouflaging techniques focus on disrupting the ability of the attacker to identify logic gates from the images obtained after delayering and imaging. For instance, this may be achieved by creating special standard cells with ‘dummy contacts’ [RSSK13]. Based on the configuration of the contacts, a cell can implement one of many Boolean functions (e.g., AND, OR, NAND, NOR, XOR). When an attacker delayers and images the IC, he/she would be unable to resolve the contacts and reveal the true identity of the camouflaged gates. As a result, some of the gates in the netlist obtained through the reverse engineering process become ambiguous, as shown in Figure1. However, it has been shown that camouflaging can be vulnerable to attacks adapted from VLSI testing [RSSK13] and Boolean satisfiability [EMGT15, SRM15]. For successfully performing these attacks, the adversary generates a set of input patterns and observes the outputs to decide the identity of the camouflaged gates. Test-based attacks generate these patterns by modeling the gate behavior with manufacturing faults and using common automatic test pattern generation (ATPG) techniques. On the other hand, satisfiability (SAT)-based attacks attempt to find proper logical assignments to the camouflaged gates by using various SAT formulations. It has been shown that creating secure designs with camouflaged gates that are resilient to these attacks incurs significant overhead in terms of area and performance. 88 Covert Gates: Protecting Integrated Circuits with Undetectable Camouflaging In this paper, we take a different approach to IC camouflaging. In contrast to using readily identifiable camouflaged gates, we modify regular logic gates to introduce ‘dummy input(s)’. When a reverse engineer tries to recover the netlist, the gate is identified as any regular cell (e.g., AND, OR, XOR). Hence, it is coined as a ‘covert gate’. However, an extra pin (or pins) is introduced into the gate, due to which the recovered netlist becomes erroneous. A comparison between previous camouflaging and our proposed technique is shown in Figure2. As seen in Figure2(a), all previous camouflaging approaches configure a logic gate into any one of N possibilities (e.g., NAND, NOR or XOR). However, these cells are easily identifiable in the design, consume large area/power/delay overheads and are susceptible to attacks. In case of covert gates, a regular gate with N inputs is transformed to the same gate with N + i inputs, where i is the number of dummy inputs used, as shown in Figure2(b). For example, a 2-input NOR gate is transformed into a 3-input NOR gate. Similarly, an inverter with one input is transformed to a NOR gate with 2 inputs, where one of the inputs is a dummy. These gates still function as intended (i.e., a camouflaged 2 input NOR gate still behaves as an inverter). However, this is not obvious to the attacker, as one (or more) of the inputs is configured as dummy and the camouflaged gates look no different from regular gates. Compared to prior camouflaging approaches, our covert gates offer the following benefits: • Inexpensive: A covert gate can be implemented by a minor change in the IC fabrication process, with only three additional masks required. • Low overhead: The covert gate incurs minimal overhead compared to previously proposed camouflaged gates, which need to be configured for various Boolean functions in one single cell. This contributes to their high layout area and poor leakage power/delay performance. In contrast, covert gates with dummy inputs consume no more area than regular standard cells and have much lower delay/power overheads. For example, the delay and power characteristics of an inverter that has been converted to a 2 input covert NAND/NOR gate are similar to that of a regular 2 input NAND/NOR gate, with area increasing by less than 1.67X. In contrast, the area, delay and power overheads of a dummy contact based camouflaged NAND gate are 5.5X, 1.6X and 4X respectively. • Indistinguishable from standard cells under SEM: From an attacker’s perspective, all gates with more than one input are considered as suspect in the entire design, as the covert gates ‘blend in’ with other gates in the netlist. Therefore, any invasive or non-invasive attack has to consider all gates in the design, which greatly increases attack complexity without the need for additional countermeasures. • Tunable output corruptibility: There is also the opportunity to choose nets in the design to connect to the dummy inputs, such that the functional/logical difference between the netlist recovered by the attacker and the original design is further increased. 1.1 Contributions Our main contributions in this paper include the following: • We propose covert gates based on doping modification and dummy contact that look no different from regular gates. • We demonstrate how these gates can be created by minor changes in the foundry fabrication process, without incurring high costs. Bicky Shakya, Haoting Shen, Mark Tehranipoor and Domenic Forte 89 • We present fabrication and SEM imaging results on structures with various doping and material stacks, demonstrating that even with state-of-the-art SEM used for reverse engineering, the modification used to create the covert gates cannot be resolved. To our knowledge, this is the first paper that provides a camouflaging strategy with definitive results on SEM imaging resistance. • We propose circuit models for the covert gates that allow overhead assessment during the design phase. • Finally, we perform SAT as well as test (ATPG)-based security analysis of designs camouflaged with our proposed technique under multiple scenarios, and quantitatively demonstrate that both attacks do not scale well for compromising designs that contain our covert gates. The rest of the paper is organized as follows. Section2 reviews the state-of-the-art in IC camouflaging. It also explains the adversarial model used and the attacks proposed so far in the context of camouflaging.
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