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Abstracts 2014 EUVL
2014 International Workshop on EUV Lithography June 23-27, 2014 Makena Beach & Golf Resort ▪ Maui, Hawaii Workshop Abstracts 2014 International Workshop on EUV Lithography Contents Welcome ______________________________________________________ 2 Workshop Agenda _______________________________________________ 4 Abstracts by Paper Number ________________________________________ 17 Organized by: www.euvlitho.com 1 2014 International Workshop on EUV Lithography Welcome Dear Colleagues; I would like to welcome you to the 2014 International Workshop on EUV Lithography in Maui, Hawaii. In this leading workshop, with a focus on R&D, researchers from around the world will present the results of their EUVL related research. As we all work to address the remaining technical challenges of EUVL, to allow its insertion in high volume computer chip manufacturing, we look forward to a productive interaction among colleagues to brainstorm technical solutions. This workshop has been made possible by the support of workshop sponsors, steering committee members, workshop support staff, session chairs and presenters. I would like to thank them for their contributions and making this workshop a success. I look forward to your participation. Best Regards Vivek Bakshi Chair, 2014 International Workshop on EUVL www.euvlitho.com 2 2014 International Workshop on EUV Lithography EUVL Workshop Steering Committee Executive Steering Committee David Attwood (LBNL) Hanku Cho (Samsung) Harry Levinson (GlobalFoundries) Hiroo Kinoshita (Hyogo University) Kurt Ronse (IMEC) -
Risk Factors
Risk Factors •Today’s presentations contain forward-looking statements. All statements made that are not historical facts are subject to a number of risks and uncertainties, and actual results may differ materially. Please refer to our most recent Earnings Release and our most recent Form 10-Q or 10-K filing for more information on the risk factors that could cause actual results to differ. •If we use any non-GAAP financial measures during the presentations, you will find on our website, intc.com, the required reconciliation to the most directly comparable GAAP financial measure. Rev. 4/19/11 Today’s News The world’s first 3-D Tri-Gate transistors on a production technology New 22nm transistors have an unprecedented combination of power savings and performance gains. These benefits will enable new innovations across a broad range of devices from the smallest handheld devices to powerful cloud-based servers. The transition to 3-D transistors continues the pace of technology advancement, fueling Moore’s Law for years to come. The world’s first demonstration of a 22nm microprocessor -- code-named Ivy Bridge -- that will be the first high-volume chip to use 3-D Tri-Gate transistors. Energy-Efficient Performance Built on Moore’s Law 1 65nm 45nm 32nm 22nm 1x 0.1x > 50% 0.01x reduction Lower Active Power Active Lower Lower Transistor Leakage Transistor Lower Active Power per Transistor (normalized) Transistor per Power Active 0.001x Constant Performance 0.1 65nm 45nm 32nm 22nm Higher Transistor Performance (Switching Speed) Planar Planar Planar Tri-Gate Source: Intel 22 nm Tri-Gate transistors increase the benefit from a new technology generation Source: Intel Transistor Innovations Enable Technology Cadence 2003 2005 2007 2009 2011 90 nm 65 nm 45 nm 32 nm 22 nm Invented 2nd Gen. -
3D-AFM Measurements for Semiconductor Structures and Devices
3D-AFM Measurements for Semiconductor Structures and Devices Ndubuisi G. Orji and Ronald G. Dixson Engineering Physics Division Physical Measurement Laboratory National Institute of Standards and Technology Gaithersburg, MD, 20899, USA Abstract This book chapter reviews different types of three-dimensional atomic force microscope (3D-AFM) measurements for semiconductor metrology. It covers different implementations of 3D-AFM, calibrations methods, measurement uncertainty considerations and applications. The goal is to outline key aspects of 3D-AFM for dimensional semiconductor measurements in a way that is accessible to both new and experienced users and gives readers a strong foundation for further study. Preprint version For published version see: N. G. Orji & R. G. Dixson “3D-AFM Measurements for Semiconductor Structures and Devices” In Metrology and Diagnostic Techniques for Nanoelectronics (eds. Z. Ma, & D. G. Seiler) (Pan Stanford, 2017). Official contributions of the U.S. Government, not subject to copyright. Certain commercial equipment, instruments, materials or companies are identified in this paper in order to specify the experimental procedure adequately, or to give full credit to sources of some material. Such identification is not intended to imply recommendation or endorsement by the National Institute of Standards and Technology, nor is it intended to imply that the materials or equipment identified are necessarily the best available for the purpose. 3D-AFM Measurements for Semiconductor Structures and Devices Table of -
Advanced MOSFET Structures and Processes for Sub-7 Nm CMOS Technologies
Advanced MOSFET Structures and Processes for Sub-7 nm CMOS Technologies Peng Zheng Electrical Engineering and Computer Sciences University of California at Berkeley Technical Report No. UCB/EECS-2016-189 http://www2.eecs.berkeley.edu/Pubs/TechRpts/2016/EECS-2016-189.html December 1, 2016 Copyright © 2016, by the author(s). All rights reserved. Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. To copy otherwise, to republish, to post on servers or to redistribute to lists, requires prior specific permission. Advanced MOSFET Structures and Processes for Sub-7 nm CMOS Technologies By Peng Zheng A dissertation submitted in partial satisfaction of the requirements for the degree of Doctor of Philosophy in Engineering - Electrical Engineering and Computer Sciences in the Graduate Division of the University of California, Berkeley Committee in charge: Professor Tsu-Jae King Liu, Chair Professor Laura Waller Professor Costas J. Spanos Professor Junqiao Wu Spring 2016 © Copyright 2016 Peng Zheng All rights reserved Abstract Advanced MOSFET Structures and Processes for Sub-7 nm CMOS Technologies by Peng Zheng Doctor of Philosophy in Engineering - Electrical Engineering and Computer Sciences University of California, Berkeley Professor Tsu-Jae King Liu, Chair The remarkable proliferation of information and communication technology (ICT) – which has had dramatic economic and social impact in our society – has been enabled by the steady advancement of integrated circuit (IC) technology following Moore’s Law, which states that the number of components (transistors) on an IC “chip” doubles every two years. -
Electrical Characterization and Modeling of Low Dimensional Nanostructure FET Jae Woo Lee
Electrical characterization and modeling of low dimensional nanostructure FET Jae Woo Lee To cite this version: Jae Woo Lee. Electrical characterization and modeling of low dimensional nanostructure FET. Autre. Université de Grenoble; 239 - Korea University, 2011. Français. NNT : 2011GRENT070. tel- 00767413 HAL Id: tel-00767413 https://tel.archives-ouvertes.fr/tel-00767413 Submitted on 19 Dec 2012 HAL is a multi-disciplinary open access L’archive ouverte pluridisciplinaire HAL, est archive for the deposit and dissemination of sci- destinée au dépôt et à la diffusion de documents entific research documents, whether they are pub- scientifiques de niveau recherche, publiés ou non, lished or not. The documents may come from émanant des établissements d’enseignement et de teaching and research institutions in France or recherche français ou étrangers, des laboratoires abroad, or from public or private research centers. publics ou privés. THÈSE Pour obtenir le grade de DOCTEUR DE LUNIVERSITÉ DE GRENOBLE Spécialité : Micro et Nano Électronique Arrêté ministériel : 7 août 2006 Présentée par Jae Woo LEE Thèse dirigée par Mireille MOUIS et Gérard GHIBAUDO préparée au sein du Laboratoire IMEP-LAHC dans l'École Doctorale EEATS Caractérisation électrique et modélisation des transistors à effet de champ de faible dimensionnalité Thèse soutenue publiquement le 5 décembre 2011 devant le jury composé de : M. Gérard GHIBAUDO DR CNRS Alpes-IMEP/INPG, Président M. Jong-Tae PARK Dr Incheon University, Rapporteur M. Jongwan JUNG Dr Sejong University, Rapporteur -
United States Securities and Exchange Commission Form
UNITED STATES SECURITIES AND EXCHANGE COMMISSION Washington, D.C. 20549 FORM 8-K CURRENT REPORT Pursuant to Section 13 OR 15(d) of The Securities Exchange Act of 1934 Date of Report: November 20, 2014 (Date of earliest event reported) INTEL CORPORATION (Exact name of registrant as specified in its charter) Delaware 000-06217 94-1672743 (State or other jurisdiction (Commission (IRS Employer of incorporation) File Number) Identification No.) 2200 Mission College Blvd., Santa Clara, California 95054-1549 (Address of principal executive offices) (Zip Code) (408) 765-8080 (Registrant's telephone number, including area code) (Former name or former address, if changed since last report) Check the appropriate box below if the Form 8-K filing is intended to simultaneously satisfy the filing obligation of the registrant under any of the following provisions (see General Instruction A.2. below): [ ] Written communications pursuant to Rule 425 under the Securities Act (17 CFR 230.425) [ ] Soliciting material pursuant to Rule 14a-12 under the Exchange Act (17 CFR 240.14a-12) [ ] Pre-commencement communications pursuant to Rule 14d-2(b) under the Exchange Act (17 CFR 240.14d-2(b)) [ ] Pre-commencement communications pursuant to Rule 13e-4(c) under the Exchange Act (17 CFR 240.13e-4c)) Item 7.01 Regulation FD Disclosure The information in this report shall not be treated as filed for purposes of the Securities Exchange Act of 1934, as amended. On November 20, 2014, Intel Corporation presented business and financial information to institutional investors, analysts, members of the press and the general public at a publicly available webcast meeting (the "Investor Meeting"). -
ZERO DEFECTS November 2015 Entegris Newsletter
ZERO DEFECTS November 2015 Entegris Newsletter CONTENTS Entegris Expands CMP Filtration Technology 1. Entegris News Solutions and Research, Analytical and Entegris Expands CMP Filtration Technology Solutions and Research, Manufacturing Capabilities in Taiwan Analytical and Manufacturing Capabilities in Taiwan Microcontamination Control business SmartStack® 300 mm Contactless unit, Clint Haris. “Entegris continues to HWS Launch @ SEMICON® Europa invest in people, technology and facilities 2. Yield Improvement in Asia to introduce new solutions for the Tackling Materials Contamination semiconductor market. As our customers Control Complexities Below 22 nm produce integrated circuits with smaller Entegris Announces New feature sizes, our nanofiber technology reduces the number of defect-causing VaporSorb™ TRK Filter for Entegris announced at the SEMICON® contaminants from reaching the wafer.” Advanced Yield Protection in Taiwan tradeshow the development of Semiconductor Lithography a platform of CMP filtration solutions The Entegris filter platform using NMB Processing using nano-melt-blown (NMB) filtration media now includes the Planargard® bulk, 5. Innovation technology, as well as the expansion of Solaris® point-of-tool and Planarcap® Diffusion, a Key Parameter to its CMP research, analytical services and point-of-dispense families to provide Understand Contamination manufacturing capabilities in Taiwan. contamination control solutions through- Phenomena in FOUPs: These investments enable the company out the CMP process area. Developed and - Part 1 – Polymer Transport to further serve the growing demand for manufactured in Taiwan, the NMB media Coefficients Obtention advanced CMP filtration solutions. utilizes the increased porosity of the nanofibers to reduce shear stress placed - Part 2 – Coefficients Application “CMP processes continue to grow in upon the slurry during transport and in Numerical Simulation complexity in both the materials used filtration operations. -
An Etching Study for Self-Aligned Double Patterning
Rochester Institute of Technology RIT Scholar Works Theses 10-19-2018 An Etching Study for Self-Aligned Double Patterning Christopher O'Connell [email protected] Follow this and additional works at: https://scholarworks.rit.edu/theses Recommended Citation O'Connell, Christopher, "An Etching Study for Self-Aligned Double Patterning" (2018). Thesis. Rochester Institute of Technology. Accessed from This Thesis is brought to you for free and open access by RIT Scholar Works. It has been accepted for inclusion in Theses by an authorized administrator of RIT Scholar Works. For more information, please contact [email protected]. An Etching Study for Self-Aligned Double Patterning Christopher O'Connell October 19,2018 A Thesis Submitted in Partial Fulfillment of the Requirements for the Degree of Master of Science in Microelectronic Engineering Department of Electrical and Microelectronic Engineering An Etching Study for Self-Aligned Double Patterning Christopher O'Connell A Thesis Submitted in Partial Fulfillment of the Requirements for the Degree of Master of Science in Microelectronic Engineering Committee Approval: Dr. Robert Pearson Advisor Date Program Director, Microelectronic Engineering Dr. Karl Hirschman Date Professor, Electrical and Microelectronic Engineering Dr. Michael Jackson Date Professor, Electrical and Microelectronic Engineering Dr. Sohail Dianat Date Deptartment Head, Electrical and Microelectronic Engineering DEPARTMENT OF ELECTRICAL AND MICROELECTRONIC ENGINEERING KATE GLEASON COLLEGE OF ENGINEERING ROCHESTER INSTITUTE OF TECHNOLOGY ROCHESTER, NEW YORK October 19,2018 Acknowledgments I would like to thank and acknowledge everyone who has helped and supported me through- out this process. Firstly, I would like to thank my committee members, Dr. Robert Pear- son, Dr. Karl Hirschman and Dr. -
Carbon Nanotube Based VLSI Interconnects Analysis and Design
SPRINGER BRIEFS IN APPLIED SCIENCES AND TECHNOLOGY Brajesh Kumar Kaushik Manoj Kumar Majumder Carbon Nanotube Based VLSI Interconnects Analysis and Design SpringerBriefs in Applied Sciences and Technology More information about this series at http://www.springer.com/series/8884 Brajesh Kumar Kaushik Manoj Kumar Majumder Carbon Nanotube Based VLSI Interconnects Analysis and Design 1 3 Brajesh Kumar Kaushik Manoj Kumar Majumder Department of Electronics and Communication Engineering Indian Institute of Technology Roorkee Roorkee Uttarakhand India ISSN 2191-530X ISSN 2191-5318 (electronic) ISBN 978-81-322-2046-6 ISBN 978-81-322-2047-3 (eBook) DOI 10.1007/978-81-322-2047-3 Library of Congress Control Number: 2014946403 Springer New Delhi Heidelberg New York Dordrecht London © The Author(s) 2015 This work is subject to copyright. All rights are reserved by the Publisher, whether the whole or part of the material is concerned, specifically the rights of translation, reprinting, reuse of illustrations, recitation, broadcasting, reproduction on microfilms or in any other physical way, and transmission or information storage and retrieval, electronic adaptation, computer software, or by similar or dissimilar methodology now known or hereafter developed. Exempted from this legal reservation are brief excerpts in connection with reviews or scholarly analysis or material supplied specifically for the purpose of being entered and executed on a computer system, for exclusive use by the purchaser of the work. Duplication of this publication or parts thereof is permitted only under the provisions of the Copyright Law of the Publisher’s location, in its current version, and permission for use must always be obtained from Springer. -
Is Dark Silicon Useful? Harnessing the Four Horsemen of the Coming Dark Silicon Apocalypse
Is Dark Silicon Useful? Harnessing the Four Horsemen of the Coming Dark Silicon Apocalypse Michael B. Taylor Computer Science & Engineering Department University of California, San Diego ABSTRACT continues but CMOS scaling ceases to provide the fruits that Due to the breakdown of Dennardian scaling, the percentage it once did. As in prior years, the computational capabilities of a silicon chip that can switch at full frequency is dropping of chips are still increasing by 2.8× per process generation; exponentially with each process generation. This utilization but a utilization wall [26] limits us to only 1.4× of this ben- wall forces designers to ensure that, at any point in time, efit { resulting in large swaths of our silicon area remaining large fractions of their chips are effectively dark or dim sili- underclocked, or dark { hence the term dark silicon [19, 8]. con, i.e., either idle or significantly underclocked. These numbers are easy to derive from simple scaling the- As exponentially larger fractions of a chip's transistors ory, which is a good thing, because it allows us to think in- become dark, silicon area becomes an exponentially cheaper tuitively about the problem. Transistor density continues to resource relative to power and energy consumption. This improve by 2× every two years, and native transistor speeds shift is driving a new class of architectural techniques that improve by 1.4×. But energy efficiency of transistors is im- \spend" area to \buy" energy efficiency. All of these tech- proving only by 1.4×, which, under constant power-budgets, niques seek to introduce new forms of heterogeneity into the results in a 2× shortfall in energy budget to power a chip at computational stack. -
Design Enablement and Design-Centric Assessment of Future Semiconductor Technologies
University of California Los Angeles Design Enablement and Design-Centric Assessment of Future Semiconductor Technologies A dissertation submitted in partial satisfaction of the requirements for the degree Doctor of Philosophy in Electrical Engineering by Rani Abou Ghaida 2012 c Copyright by Rani Abou Ghaida 2012 Abstract of the Dissertation Design Enablement and Design-Centric Assessment of Future Semiconductor Technologies by Rani Abou Ghaida Doctor of Philosophy in Electrical Engineering University of California, Los Angeles, 2012 Professor Puneet Gupta, Chair The semiconductor industry is likely to see several radical changes in the manufac- turing, device and interconnect technologies in the next few years and decades. One of the most favorable options of manufacturing technologies is multiple-patterning lithography. This novel technology has serious implications on design, however, and it will require an enabling design to see any adoption. This dissertation contributes to the design enablement of multiple-patterning technology. We propose a general methodology for the automated adaptation of layout to multiple-patterning masking the complexity in dealing with its manufac- turing constraints. We also study the impact of this technology on design and show the benefits of bringing the design perspective into making manufacturing-process decisions. Lastly, we propose a novel technique for DP that reduces cost and improve overlay/Critical-Dimension (CD) control in multiple-patterning. Many technology choices are presented to achieve scaling to every next node and early technology assessment, before the actual development of technologies, has be- come more necessary than ever as a means to ensure faster adoption and manageable technology/design development costs. Technology assessment is currently a highly unsystematic procedure that relies on small-scale experiments and manufacturing tests and much on speculations based on technologists/designers experience with previous technology generations. -
Download 2020 Annual Report Based on IFRS
Annual Report 2020 ’ASML ANNUAL2 REPORT 2020 01 Contents 2020 at a glance Leadership and governance 5 Interview with our CEO 106 Corporate governance 7 2020 Highlights 119 Message from the Chair of our Supervisory Board 8 Business as (un)usual 120 Supervisory Board report 135 Remuneration report Who we are and what we do 10 Our company 147 Directors’ Responsibility Statement 14 Our products and services 17 Our markets Consolidated Financial Statements 18 Semiconductor industry trends and opportunities 150 Consolidated Statement of Profit or Loss 22 How we create value 151 Consolidated Statement of Comprehensive Income 24 Our strategy 152 Consolidated Statement of Financial Position 153 Consolidated Statement of Changes in Equity What we achieved in 2020 154 Consolidated Statement of Cash Flows 27 Technology and innovation ecosystem 155 Notes to the Consolidated Financial Statements 39 Our people 53 Our supply chain Company Financial Statements 59 Circular economy 209 Company Balance Sheet 65 Climate and energy 210 Company Statement of Profit or Loss 211 Notes to the Company Financial Statements CFO financial review 74 Financial performance Other Information 81 Financing policy 217 Adoption of Financial Statements 83 Tax policy 218 Independent auditor’s report 85 Long-term growth opportunities Non-financial statements How we manage risk 225 Assurance Report of the Independent Auditor 87 How we manage risk 227 About the non-financial information 92 Risk factors 229 Non-financial indicators 100 Responsible business 244 Materiality: assessing our impact 247 Stakeholder engagement 250 Other appendices 253 Definitions A definition or explanation of abbreviations, technical terms and other terms used throughout this Annual Report can be found in the chapter Definitions.