The Future of Semiconductor Intellectual Property Architectural Blocks in Europe
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Intel's Breakthrough in High-K Gate Dielectric Drives Moore's Law Well
January 2004 Magazine Page 1 Technology @Intel Intel’s Breakthrough in High-K Gate Dielectric Drives Moore’s Law Well into the Future Robert S. Chau Intel Fellow, Technology and Manufacturing Group Director, Transistor Research Intel Corporation Copyright © Intel Corporation 2004. *Third-party brands and names are the property of their respective owners. 1 January 2004 Magazine Page 2 Technology @Intel Table of Contents (Click on page number to jump to sections) INTEL’S BREAKTHROUGH IN HIGH-K GATE DIELECTRIC DRIVES MOORE’S LAW WELL INTO THE FUTURE................................................................... 3 OVERVIEW .......................................................................................................... 3 RUNNING OUT OF ATOMS ....................................................................................... 3 SEARCH FOR NEW MATERIALS ................................................................................ 4 RECORD PERFORMANCE ........................................................................................ 5 CAN-DO SPIRIT.................................................................................................... 6 SUMMARY ........................................................................................................... 6 MORE INFO ......................................................................................................... 7 AUTHOR BIO........................................................................................................ 7 DISCLAIMER: THE MATERIALS -
China's Progress in Semiconductor Manufacturing Equipment
MARCH 2021 China’s Progress in Semiconductor Manufacturing Equipment Accelerants and Policy Implications CSET Policy Brief AUTHORS Will Hunt Saif M. Khan Dahlia Peterson Executive Summary China has a chip problem. It depends entirely on the United States and U.S. allies for access to advanced commercial semiconductors, which underpin all modern technologies, from smartphones to fighter jets to artificial intelligence. China’s current chip dependence allows the United States and its allies to control the export of advanced chips to Chinese state and private actors whose activities threaten human rights and international security. Chip dependence is also expensive: China currently depends on imports for most of the chips it consumes. China has therefore prioritized indigenizing advanced semiconductor manufacturing equipment (SME), which chip factories require to make leading-edge chips. But indigenizing advanced SME will be hard since Chinese firms have serious weaknesses in almost all SME sub-sectors, especially photolithography, metrology, and inspection. Meanwhile, the top global SME firms—based in the United States, Japan, and the Netherlands—enjoy wide moats of intellectual property and world- class teams of engineers, making it exceptionally difficult for newcomers to the SME industry to catch up to the leading edge. But for a country with China’s resources and political will, catching up in SME is not impossible. Whether China manages to close this gap will depend on its access to five technological accelerants: 1. Equipment components. Building advanced SME often requires access to a range of complex components, which SME firms often buy from third party suppliers and then assemble into finished SME. -
Oriented Conferences Four Solutions
Delivering Solutions and Technology to the World’s Design Engineering Community Four Solutions- Oriented Conferences • System-on-Chip Design Conference • IP World Forum • High-Performance System Design Conference • Wireless and Optical Broadband Design Conference Special Technology Focus Areas January 29 – February 1, 2001 • Internet and Information Exhibits: January 30–31, 2001 Appliance Design Santa Clara Convention Center • Embedded Design Santa Clara, California • RF, Optical, and Analog Design NEW! • IEC Executive Forum International Engineering Register by January 5 and Consortium save $100 – and be entered to win www.iec.org a Palm Pilot! Practical Design Solutions Practical design-engineering solutions presented by practicing engineers—The DesignCon reputation of excellence has been built largely by the practical nature of its sessions. Design engineers hand selected by our team of professionals provide you with the best electronic design and silicon-solutions information available in the industry. DesignCon provides attendees with DesignCon has an established reputation for the high design solutions from peers and professionals. quality of its papers and its expert-level speakers from Silicon Valley and around the world. Each year more than 100 industry pioneers bring to light the design-engineering solutions that are on the leading edge of technology. This elite group of design engineers presents unique case studies, technology innovations, practical techniques, design tips, and application overviews. Who Should Attend Any professionals who need to stay on top of current information regarding design-engineering theories, The most complete educational experience techniques, and application strategies should attend this in the industry conference. DesignCon attracts engineers and allied The four conference options of DesignCon 2001 provide a professionals from all levels and disciplines. -
Technology Roadmap for 22Nm CMOS and Beyond
Technology Roadmap for 22nm CMOS and beyond June 1, 2009 IEDST 2009@IIT-Bombay Hiroshi Iwai Tokyo Institute of Technology 1 Outline 1. Scaling 2. ITRS Roadmap 3. Voltage Scaling/ Low Power and Leakage 4. SRAM Cell Scaling 5.Roadmap for further future as a personal view 2 1. Scaling 3 Scaling Method: by R. Dennard in 1974 1 Wdep: Space Charge Region (or Depletion Region) Width 1 1 SDWdep has to be suppressed 1 Otherwise, large leakage Wdep between S and D I Leakage current Potential in space charge region is high, and thus, electrons in source are 0 attracted to the space charge region. 0 V 1 K=0.7 X , Y, Z :K, V :K, Na : 1/K for By the scaling, Wdep is suppressed in proportion, example and thus, leakage can be suppressed. K Good scaled I-V characteristics K K Wdep V/Na K Wdep I I : K : K 0 0K V 4 Downscaling merit: Beautiful! Geometry & L , W g g K Scaling K : K=0.7 for example Supply voltage Tox, Vdd Id = vsatWgCo (Vg‐Vth) Co: gate C per unit area Drive current I d K –1 ‐1 ‐1 in saturation Wg (tox )(Vg‐Vth)= Wgtox (Vg‐Vth)= KK K=K Id per unit Wg Id/µm 1 Id per unit Wg = Id / Wg= 1 Gate capacitance Cg K Cg = εoεoxLgWg/tox KK/K = K Switching speed τ K τ= CgVdd/Id KK/K= K Clock frequency f 1/K f = 1/τ = 1/K Chip area Achip α α: Scaling factor In the past, α>1 for most cases Integration (# of Tr) N α/K2 N α/K2 = 1/K2 , when α=1 Power per chip P α fNCV2/2 K‐1(αK‐2)K (K1 )2= α = 1, when α=1 5 k= 0.7 and α =1 k= 0.72 =0.5 and α =1 Single MOFET Vdd 0.7 Vdd 0.5 Lg 0.7 Lg 0.5 Id 0.7 Id 0.5 Cg 0.7 Cg 0.5 P (Power)/Clock P (Power)/Clock 0.73 = 0.34 0.53 = 0.125 τ (Switching time) 0.7 τ (Switching time) 0.5 Chip N (# of Tr) 1/0.72 = 2 N (# of Tr) 1/0.52 = 4 f (Clock) 1/0.7 = 1.4 f (Clock) 1/0.5 = 2 P (Power) 1 P (Power) 1 6 - The concerns for limits of down-scaling have been announced for every generation. -
Mack DFM Keynote
The future of lithography and its impact on design Chris Mack www.lithoguru.com 1 Outline • History Lessons – Moore’s Law – Dennard Scaling – Cost Trends • Is Moore’s Law Over? – Litho scaling? • The Design Gap • The Future is Here 2 1965: Moore’s Observation 100000 65,000 transistors 10000 Doubling each year 1000 100 Components per chip per Components 10 64 transistors! 1 1959 1961 1963 1965 1967 1969 1971 1973 1975 Year G. E. Moore, “Cramming More Components onto Integrated Circuits,” Electronics Vol. 38, No. 8 (Apr. 19, 1965) pp. 114-117. 3 Moore’s Law “Doubling every 1 – 2 years” 25 nm 100000000000 10000000000 feature size + die size 1000000000 100000000 10000000 1000000 Today only lithography 100000 25 µm contributes 10000 1000 Componentsper chip 100 feature size + die size + device cleverness 10 1 1959 1969 1979 1989 1999 2009 2019 Year 4 Dennard’s MOSFET Scaling Rules Device/Circuit Parameter Scaling Factor Device dimension/thickness 1/ λ Doping Concentration λ Voltage 1/ λ Current 1/ λ Robert Dennard Capacitance 1/ λ Delay time 1/ λ Transistorpower 1/ λ2 Power density 1 There are no trade-offs. Everything gets better when you shrink a transistor! 5 The Golden Age 1975 - 2000 • Dennard Scaling - as transistor shrinks it gets: – Faster – Lower power (constant power density) – Smaller/lighter • Moore’s Law – More transistors/chip & cost of transistor = ‒15%/year • More powerful chip for same price • Same chip for lower price – Many new applications – large increase in volume 6 Problems with Dennard Scaling • Voltage stopped shrinking -
Moore's Law at 40
Moore-Chap-07.qxd 7/28/2006 11:07 AM Page 67 C H A P T E R 7 MOORE’S LAW AT 40 Gordon E. Moore ollowing a paper that I wrote in 1965 and a speech that I gave in F1975, the term “Moore’s law” was coined as a name for a type of prediction that I had made. Over time, the term was used much more broadly, referring to almost any phenomenon related to the semiconductor industry that when plotted on semilog graph paper approximates a straight line. In more recent years, Moore’s law has been connected to nearly any exponential change in technology. I hesitate to focus on the history of my predictions, for by so doing I might restrict the definition of Moore’s law. Nevertheless, in my discussion, I will review the background to my predictions, the reasoning behind them, how these pre- dictions aligned with actual industry performance, and why they did. I will close with a look forward at the future prospects for the prediction. OVERVIEW Moore’s law is really about economics. My prediction was about the future direction of the semiconductor industry, and I have found that the industry is best understood through some of its underlying economics. To form an overall view of the industry, it is useful to consider a plot of revenue versus time. As Figure 1 indicates, the semicon- ductor industry has been a strong growth industry: it has grown a hundredfold dur- ing Intel’s existence. However, from my point of view, this plot of revenue growth really underestimates the true rate of growth for the industry. -
Moore's Law: the Future of Si Microelectronics
Moore’s law: the future of Si microelectronics Soon after Bardeen, Brattain, and Shockley invented a solid-state device in 19471 to replace electron vacuum tubes, the microelectronics industry and a revolution started. Since its birth, the industry has experienced four decades of unprecedented explosive growth driven by two factors: Noyce and Kilby inventing the planar integrated circuit2,3 and the advantageous characteristics that result from scaling (shrinking) solid-state devices. Scott E. Thompson and Srivatsan Parthasarathy SWAMP Center, Department of Electrical and Computer Engineering, University of Florida, Gainsville, FL 32611-6130 USA E-mail:[email protected], [email protected] Scaling solid-state devices has the peculiar property of improving approaches under investigation are: (1) nonclassical CMOS, which cost, performance, and power, which has historically given any consists of new channel materials and/or multigate fully depleted company with the latest technology a large competitive device structures; and (2) alternatives to CMOS, such as spintronics, advantage in the market. As a result, the microelectronics single electron devices, and molecular computing8,9. While some of industry has driven transistor feature size scaling from 10 µm to these non-Si research areas are important and will be successful in ~30 nm4-6 during the past 40 years. During most of this time, new applications and markets10, it seems unlikely any of the non-Si scaling simply consisted of reducing the feature size. However, options can replace the Si transistor for the $300 billion during certain periods, there were major changes as with the microelectronics industry in the foreseeable future (perhaps as long industry move from Si bipolar to p-channel metal-oxide- as 30 years). -
Intel(R) Pentium(R) 4 Processor on 90 Nm Process Datasheet
Intel® Pentium® 4 Processor on 90 nm Process Datasheet 2.80 GHz – 3.40 GHz Frequencies Supporting Hyper-Threading Technology1 for All Frequencies with 800 MHz Front Side Bus February 2005 Document Number: 300561-003 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN INTEL'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, INTEL ASSUMES NO LIABILITY WHATSOEVER, AND INTEL DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY, RELATING TO SALE AND/OR USE OF INTEL PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. Intel products are not intended for use in medical, life saving, or life sustaining applications. Intel may make changes to specifications and product descriptions at any time, without notice. Designers must not rely on the absence or characteristics of any features or instructions marked “reserved” or “undefined.” Intel reserves these for future definition and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to them. The Intel® Pentium® 4 processor on 90 nm process may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current characterized errata are available on request. Contact your local Intel sales office or your distributor to obtain the latest specifications and before placing your product order. 1Hyper-Threading Technology requires a computer system with an Intel® Pentium® 4 processor supporting HT Technology and a Hyper-Threading Technology enabled chipset, BIOS and operating system. -
Organising Committees
DATE 2005 Executive Committee GENERAL CHAIR PROGRAMME CHAIR Nobert Wehn Luca Benini Kaiserslautern U, DE DEIS – Bologna U, IT VICE CHAIR & PAST PROG. CHAIR VICE PROGRAMME CHAIR Georges Gielen Donatella Sciuto KU Leuven, BE Politecnico di Milano, IT FINANCE CHAIR PAST GENERAL CHAIR Rudy Lauwereins Joan Figueras IMEC, Leuven, BE UP Catalunya, Barcelona, ES DESIGNERS’ FORUM DESIGNERS’ FORUM Menno Lindwer Christoph Heer Philips, Eindhoven, NL Infineon, Munich, DE SPECIAL SESSIONS & DATE REP AT DAC FRIDAY WORKSHOPS Ahmed Jerraya Bashir Al-Hashimi TIMA, Grenoble, FR Southampton U, UK INTERACTIVE PRESENTATIONS ELECTRONIC REVIEW Eugenio Villar Wolfgang Mueller Cantabria U, ES Paderborn U, DE WEB MASTER AUDIO VISUAL Udo Kebschull Jaume Segura Heidelberg U, DE Illes Baleares U, ES TUTORIALS & MASTER COURSES FRINGE MEETINGS Enrico Macii Michel Renovell Politecnico di Torino, IT LIRMM, Montpellier, FR AUTOMOTIVE DAY BIOCHIPS DAY Juergen Bortolazzi Christian Paulus DaimlerChrysler, DE Infineon, Munich, DE PROCEEDINGS EXHIBITION PROGRAMME Christophe Bobda Juergen Haase Erlangen U, DE edacentrum, Hannover, DE UNIVERSITY BOOTH UNIVERSITY BOOTH & ICCAD Volker Schoeber REPRESENTATIVE edacentrum, Hannover, DE Wolfgang Rosenstiel Tuebingen U/FZI, DE AWARDS & DATE REP. AT ASPDAC PCB SYMPOSIUM Peter Marwedel Rainer Asfalg Dortmund U, DE Mentor Graphics, DE TRAVEL GRANTS COMMUNICATIONS Marta Rencz Bernard Courtois TU Budapest, HU TIMA, Grenoble, FR LOCAL ARRANGEMENTS PRESS LIASON Volker Dueppe Fred Santamaria Siemens, DE Infotest, Paris, FR ESF CHAIR & EDAA -
Endodontics • Infection Control @Septodont USA Contact Your Septodont Rep
A partnered publicationFor Dental with Dental Sales Professionals Sales Pro • www.dentalsalespro.com June, 2010 For Dental Sales Professionals April 2013 Selling opportunities around implants Many implants are sold direct, but there are still opportunities for dealer reps Alcohol Free. Fragrance Free. Worry Free. Introducing NEW Sani-Cloth® AF3. Protecting your patients has never been easier! • Ideal for use around patients and staff Fragrance free formulation. No harsh odors. NEW! • Quat-based disinfection against TB, HIV, HBV and HCV Effective against 44 microorganisms in 3 minutes. • Perfect for equipment and other hard surfaces sensitive to alcohol Compatible with most healthcare equipment. Providing solutions for your customers is as easy as AF3! FREE sample at pdipdi.com/AF3 © 2013 PDI. SELLTO WIN! Win a 32GB Apple® iPad mini when you sell $5000 in any combination of: • OraVerse® (Phentolamine Mesylate) • Biodentine® (15 & 5 Pack) • N’Durance® Dimer Core • N’Durance® Universal Composite • N’Durance® Cristal Composite • N’Durance® Dimer Flow Orders effective 1/1/13 - 6/30/13 Contact your Septodont Rep! Photo courtesy of Apple® Inc. •Utilize this opportunity to build your business, while helping dentists innovate their’s. Please allow 4-8 weeks for delivery. Sales of Biodentine, OraVerse and the following N’Durance products only: Dimer Core, Universal Composite and Dimer Flow will be accumulated from January 1, 2013-June 30, 2013. N’Durance Dimer Core, N’Durance Universal Composite, N’Durance Cristal, N’Durance Dimer Flow, OraVerse and Biodentine are all registered trademarks of Septodont Inc. Not to be combined with any other Septodont offer. Apple® is a registered trademark of Apple Inc. -
Risk Factors
Risk Factors •Today’s presentations contain forward-looking statements. All statements made that are not historical facts are subject to a number of risks and uncertainties, and actual results may differ materially. Please refer to our most recent Earnings Release and our most recent Form 10-Q or 10-K filing for more information on the risk factors that could cause actual results to differ. •If we use any non-GAAP financial measures during the presentations, you will find on our website, intc.com, the required reconciliation to the most directly comparable GAAP financial measure. Rev. 4/19/11 Today’s News The world’s first 3-D Tri-Gate transistors on a production technology New 22nm transistors have an unprecedented combination of power savings and performance gains. These benefits will enable new innovations across a broad range of devices from the smallest handheld devices to powerful cloud-based servers. The transition to 3-D transistors continues the pace of technology advancement, fueling Moore’s Law for years to come. The world’s first demonstration of a 22nm microprocessor -- code-named Ivy Bridge -- that will be the first high-volume chip to use 3-D Tri-Gate transistors. Energy-Efficient Performance Built on Moore’s Law 1 65nm 45nm 32nm 22nm 1x 0.1x > 50% 0.01x reduction Lower Active Power Active Lower Lower Transistor Leakage Transistor Lower Active Power per Transistor (normalized) Transistor per Power Active 0.001x Constant Performance 0.1 65nm 45nm 32nm 22nm Higher Transistor Performance (Switching Speed) Planar Planar Planar Tri-Gate Source: Intel 22 nm Tri-Gate transistors increase the benefit from a new technology generation Source: Intel Transistor Innovations Enable Technology Cadence 2003 2005 2007 2009 2011 90 nm 65 nm 45 nm 32 nm 22 nm Invented 2nd Gen. -
3D-AFM Measurements for Semiconductor Structures and Devices
3D-AFM Measurements for Semiconductor Structures and Devices Ndubuisi G. Orji and Ronald G. Dixson Engineering Physics Division Physical Measurement Laboratory National Institute of Standards and Technology Gaithersburg, MD, 20899, USA Abstract This book chapter reviews different types of three-dimensional atomic force microscope (3D-AFM) measurements for semiconductor metrology. It covers different implementations of 3D-AFM, calibrations methods, measurement uncertainty considerations and applications. The goal is to outline key aspects of 3D-AFM for dimensional semiconductor measurements in a way that is accessible to both new and experienced users and gives readers a strong foundation for further study. Preprint version For published version see: N. G. Orji & R. G. Dixson “3D-AFM Measurements for Semiconductor Structures and Devices” In Metrology and Diagnostic Techniques for Nanoelectronics (eds. Z. Ma, & D. G. Seiler) (Pan Stanford, 2017). Official contributions of the U.S. Government, not subject to copyright. Certain commercial equipment, instruments, materials or companies are identified in this paper in order to specify the experimental procedure adequately, or to give full credit to sources of some material. Such identification is not intended to imply recommendation or endorsement by the National Institute of Standards and Technology, nor is it intended to imply that the materials or equipment identified are necessarily the best available for the purpose. 3D-AFM Measurements for Semiconductor Structures and Devices Table of