United States Securities and Exchange Commission Form
Total Page:16
File Type:pdf, Size:1020Kb
Load more
Recommended publications
-
How to Hack a Turned-Off Computer Or Running Unsigned
HOW TO HACK A TURNED-OFF COMPUTER, OR RUNNING UNSIGNED CODE IN INTEL ME Contents Contents ................................................................................................................................ 2 1. Introduction ...................................................................................................................... 3 1.1. Intel Management Engine 11 overview ............................................................................. 4 1.2. Published vulnerabilities in Intel ME .................................................................................. 5 1.2.1. Ring-3 rootkits.......................................................................................................... 5 1.2.2. Zero-Touch Provisioning ........................................................................................... 5 1.2.3. Silent Bob is Silent .................................................................................................... 5 2. Potential attack vectors ...................................................................................................... 6 2.1. HECI ............................................................................................................................... 6 2.2. Network (vPro only)......................................................................................................... 6 2.3. Hardware attack on SPI interface ..................................................................................... 6 2.4. Internal file system ......................................................................................................... -
Developing Solutions for the Internet of Things
Cloud Data Gateways Analytics Things WHITE PAPER Internet of Things Developing Solutions for the Internet of Things Intel® products, solutions, and services are enabling secure and seamless solutions for the Internet of Things (IoT). Introduction The world is undergoing a dramatic transformation, rapidly transitioning from isolated systems to ubiquitous Internet-enabled ‘things’ capable of generating data that can be analyzed to extract valuable information. Commonly referred to as the Internet of Things (IoT), this new reality will enrich everyday life, increase business productivity, improve government efficiency, and the list goes on. Intel is working with a large community of solution providers to develop IoT solutions for a wide range of organizations and businesses, including industrial, retail, automotive, energy, and healthcare industries. The solutions generate actionable information by running analytic Powering software and services on data that moves between devices and the cloud in a manner that is Business always secure, manageable, and user-friendly. Transformation Whether connecting a consumer wearable device, vehicle, or factory controller to the Internet, everyone wants it to be quick and seamless. This paper describes how Intel® products and technologies are helping make this a reality by providing fundamental building blocks for a robust ecosystem that is developing end-to-end IoT solutions. Building Blocks for Thing to Cloud Innovation The IoT vision is to create opportunities to transform businesses, people’s lives, and the world in countless ways by enabling billions of systems across the globe to share and analyze data over the cloud. With these capabilities, IoT solutions can improve medical outcomes, create better products faster, lower development cost, make shopping more enjoyable, or optimize energy generation and consumption. -
Mack DFM Keynote
The future of lithography and its impact on design Chris Mack www.lithoguru.com 1 Outline • History Lessons – Moore’s Law – Dennard Scaling – Cost Trends • Is Moore’s Law Over? – Litho scaling? • The Design Gap • The Future is Here 2 1965: Moore’s Observation 100000 65,000 transistors 10000 Doubling each year 1000 100 Components per chip per Components 10 64 transistors! 1 1959 1961 1963 1965 1967 1969 1971 1973 1975 Year G. E. Moore, “Cramming More Components onto Integrated Circuits,” Electronics Vol. 38, No. 8 (Apr. 19, 1965) pp. 114-117. 3 Moore’s Law “Doubling every 1 – 2 years” 25 nm 100000000000 10000000000 feature size + die size 1000000000 100000000 10000000 1000000 Today only lithography 100000 25 µm contributes 10000 1000 Componentsper chip 100 feature size + die size + device cleverness 10 1 1959 1969 1979 1989 1999 2009 2019 Year 4 Dennard’s MOSFET Scaling Rules Device/Circuit Parameter Scaling Factor Device dimension/thickness 1/ λ Doping Concentration λ Voltage 1/ λ Current 1/ λ Robert Dennard Capacitance 1/ λ Delay time 1/ λ Transistorpower 1/ λ2 Power density 1 There are no trade-offs. Everything gets better when you shrink a transistor! 5 The Golden Age 1975 - 2000 • Dennard Scaling - as transistor shrinks it gets: – Faster – Lower power (constant power density) – Smaller/lighter • Moore’s Law – More transistors/chip & cost of transistor = ‒15%/year • More powerful chip for same price • Same chip for lower price – Many new applications – large increase in volume 6 Problems with Dennard Scaling • Voltage stopped shrinking -
BRKINI-2390.Pdf
BRKINI-2390 Data Center security within modern compute and attached fabrics - servers, IO, management Dan Hanson Director UCS Architectures and Technical Marketing Cisco Spark Questions? Use Cisco Spark to communicate with the speaker after the session How 1. Find this session in the Cisco Live Mobile App 2. Click “Join the Discussion” 3. Install Spark or go directly to the space 4. Enter messages/questions in the space cs.co/ciscolivebot#BRKINI-2390 © 2018 Cisco and/or its affiliates. All rights reserved. Cisco Public Recent Press Items © 2018 Cisco and/or its affiliates. All rights reserved. Cisco Public Agenda • x86 Architecture Review • BIOS and Kernel Manipulation • Device Firmware Manipulation • On Server Data Storage Manipulation • Segmentation and Device access • Root of Trust Flow • Policy Control vs. Component Configuration (Cisco UCS and ACI) • Example of Security Offloading: Skyport Systems • Conclusion x86 Architecture Review Many Points of possible attack X86 Reference Legacy Elements • You may see many terms in various articles shown here • Over time, items moving on the CPU itself • Memory • PCIe • Processors/Servers differentiation in some areas • Front Side Bus speeds • Direct Media Interface • Southbridge Configurations BRKINI-2390 © 2018 Cisco and/or its affiliates. All rights reserved. Cisco Public 7 X86 Reference Fundamental Architecture • Not shown: Quick Path Interconnect/UltraPath Interconnect for CPU to CPU communications • Varied counts and speeds for multi-socket systems • Current Designs have On-Die PCIe and Memory controllers • Varied numbers and DIMMs in memory channels by CPU • Platform Controller Hub varies and can even offer server acceleration and security functions BRKINI-2390 © 2018 Cisco and/or its affiliates. -
Dell EMC Poweredge C4140 Technical Guide
Dell EMC PowerEdge C4140 Technical Guide Regulatory Model: E53S Series Regulatory Type: E53S001 Notes, cautions, and warnings NOTE: A NOTE indicates important information that helps you make better use of your product. CAUTION: A CAUTION indicates either potential damage to hardware or loss of data and tells you how to avoid the problem. WARNING: A WARNING indicates a potential for property damage, personal injury, or death. © 2017 - 2019 Dell Inc. or its subsidiaries. All rights reserved. Dell, EMC, and other trademarks are trademarks of Dell Inc. or its subsidiaries. Other trademarks may be trademarks of their respective owners. 2019 - 09 Rev. A00 Contents 1 System overview ......................................................................................................................... 5 Introduction............................................................................................................................................................................ 5 New technologies.................................................................................................................................................................. 5 2 System features...........................................................................................................................7 Specifications......................................................................................................................................................................... 7 Product comparison............................................................................................................................................................. -
Characterization of the Cmos Finfet Structure On
CHARACTERIZATION OF THE CMOS FINFET STRUCTURE ON SINGLE-EVENT EFFECTS { BASIC CHARGE COLLECTION MECHANISMS AND SOFT ERROR MODES By Patrick Nsengiyumva Dissertation Submitted to the Faculty of the Graduate School of Vanderbilt University in partial fulfillment of the requirements for the degree of DOCTOR OF PHILOSOPHY in Electrical Engineering May 11, 2018 Nashville, Tennessee Approved: Lloyd W. Massengill, Ph.D. Michael L. Alles, Ph.D. Bharat B. Bhuva, Ph.D. W. Timothy Holman, Ph.D. Alexander M. Powell, Ph.D. © Copyright by Patrick Nsengiyumva 2018 All Rights Reserved DEDICATION In loving memory of my parents (Boniface Bimuwiha and Anne-Marie Mwavita), my uncle (Dr. Faustin Nubaha), and my grandmother (Verediana Bikamenshi). iii ACKNOWLEDGEMENTS This dissertation work would not have been possible without the support and help of many people. First of all, I would like to express my deepest appreciation and thanks to my advisor Dr. Lloyd Massengill for his continual support, wisdom, and mentoring throughout my graduate program at Vanderbilt University. He has pushed me to look critically at my work and become a better research scholar. I would also like to thank Dr. Michael Alles and Dr. Bharat Bhuva, who have helped me identify new paths in my research and have been a constant source of ideas. I am also very grateful to Dr. W. T. Holman and Dr. Alexander Powell for serving on my committee and for their constructive comments. Special thanks go to Dr. Jeff Kauppila, Jeff Maharrey, Rachel Harrington, and Tim Haeffner for their support with test IC designs and experiments. I would also like to thank Dennis Ball (Scooter) for his tremendous help with TCAD models. -
C610 Series Chipset and Intel® X99 Chipset Platform Controller Hub (PCH) External Design Specification (EDS) Specification Update
Intel® C610 Series Chipset and Intel® X99 Chipset Platform Controller Hub (PCH) External Design Specification (EDS) Specification Update June 2016 Reference Number: 330789-004 Intel technologies’ features and benefits depend on system configuration and may require enabled hardware, software or service activation. Learn more at Intel.com, or from the OEM or retailer. No computer system can be absolutely secure. Intel does not assume any liability for lost or stolen data or systems or any damages resulting from such losses. You may not use or facilitate the use of this document in connection with any infringement or other legal analysis concerning Intel products described herein. You agree to grant Intel a non-exclusive, royalty-free license to any patent claim thereafter drafted which includes subject matter disclosed herein. No license (express or implied, by estoppel or otherwise) to any intellectual property rights is granted by this document. The products described may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current characterized errata are available on request. Intel disclaims all express and implied warranties, including without limitation, the implied warranties of merchantability, fitness for a particular purpose, and non-infringement, as well as any warranty arising from course of performance, course of dealing, or usage in trade. I2C is a two-wire communications bus/protocol developed by Philips. SMBus is a subset of the I2C bus/protocol and was developed by Intel. Implementations of the I2C bus/protocol may require licenses from various entities, including Philips Electronics N.V. and North American Philips Corporation. -
The End of Moore's Law and Faster General Purpose Computing, and A
The End of Moore’s Law & Faster General Purpose Computing, and a Road Forward John Hennessy Stanford University March 2019 The End of an Era • 40 years of stunning progress in microprocessor design • 1.4x annual performance improvement for 40+ years ≈ 106 x faster (throughput)! • Three architectural innovations: • Width: 8->16->64 bit (~4x) • Instruction level parallelism: • 4-10 cycles per instruction to 4+ instructions per cycle (~10-20x) • Multicore: one processor to 32 cores (~32x) • Clock rate: 3 MHz to 4 GHz (through technology & architecture) • Made possible by IC technology: • Moore’s Law: growth in transistor count • Dennard Scaling: power/transistor shrinks as speed & density increase • Power = frequency x CV2 • Energy expended per computation was reducing Future processors 1 THREE CHANGES CONVERGE • Technology • End of Dennard scaling: power becomes the key constraint • Slowdown in Moore’s Law: transistors cost (even unused) • Architectural • Limitation and inefficiencies in exploiting instruction level parallelism end the uniprocessor era. • Amdahl’s Law and its implications end the “easy” multicore era • Application focus shifts • From desktop to individual, mobile devices and ultrascale cloud computing, IoT: new constraints. Future processors 2 UNIPROCESSOR PERFORMANCE (SINGLE CORE) Performance = highest SPECInt by year; from Hennessy & Patterson [2018]. Future processors 3 MOORE’S LAW IN DRAMS 4 THE TECHNOLOGY SHIFTS MOORE’S LAW SLOWDOWN IN INTEL PROCESSORS 10X Cost/transisto r slowing down faster, due to fab costs. Future processors 5 TECHNOLOGY, POWER, AND DENNARD SCALING 200 4.5 180 4 Technology (nm) 160 3.5 Energy/nm^2 140 3 120 2.5 100 2 80 1.5 60 Namometers 1 40 20 0.5 nm^2 per Power Relative 0 0 2000 2002 2004 2006 2008 2010 2012 2014 2016 2018 2020 Power consumption Energy scaling for fixed task is better, since more & faster xistors. -
Risk Factors
Risk Factors •Today’s presentations contain forward-looking statements. All statements made that are not historical facts are subject to a number of risks and uncertainties, and actual results may differ materially. Please refer to our most recent Earnings Release and our most recent Form 10-Q or 10-K filing for more information on the risk factors that could cause actual results to differ. •If we use any non-GAAP financial measures during the presentations, you will find on our website, intc.com, the required reconciliation to the most directly comparable GAAP financial measure. Rev. 4/19/11 Today’s News The world’s first 3-D Tri-Gate transistors on a production technology New 22nm transistors have an unprecedented combination of power savings and performance gains. These benefits will enable new innovations across a broad range of devices from the smallest handheld devices to powerful cloud-based servers. The transition to 3-D transistors continues the pace of technology advancement, fueling Moore’s Law for years to come. The world’s first demonstration of a 22nm microprocessor -- code-named Ivy Bridge -- that will be the first high-volume chip to use 3-D Tri-Gate transistors. Energy-Efficient Performance Built on Moore’s Law 1 65nm 45nm 32nm 22nm 1x 0.1x > 50% 0.01x reduction Lower Active Power Active Lower Lower Transistor Leakage Transistor Lower Active Power per Transistor (normalized) Transistor per Power Active 0.001x Constant Performance 0.1 65nm 45nm 32nm 22nm Higher Transistor Performance (Switching Speed) Planar Planar Planar Tri-Gate Source: Intel 22 nm Tri-Gate transistors increase the benefit from a new technology generation Source: Intel Transistor Innovations Enable Technology Cadence 2003 2005 2007 2009 2011 90 nm 65 nm 45 nm 32 nm 22 nm Invented 2nd Gen. -
(PCH) Thermal Mechanical Specifications and Design Guid
Intel® 6 Series Chipset and Intel® C200 Series Chipset Thermal Mechanical Specifications and Design Guidelines (TMSDG) May 2011 324647-004 INFORMATIONLegal Lines and Disclaimers IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN INTEL'S TERMS AND CONDITIONS OF SALE FOR SUCH PRODUCTS, INTEL ASSUMES NO LIABILITY WHATSOEVER AND INTEL DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY, RELATING TO SALE AND/OR USE OF INTEL PRODUCTS INCLUDING LIABILITY OR WARRANTIES RELATING TO FITNESS FOR A PARTICULAR PURPOSE, MERCHANTABILITY, OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS OTHERWISE AGREED IN WRITING BY INTEL, THE INTEL PRODUCTS ARE NOT DESIGNED NOR INTENDED FOR ANY APPLICATION IN WHICH THE FAILURE OF THE INTEL PRODUCT COULD CREATE A SITUATION WHERE PERSONAL INJURY OR DEATH MAY OCCUR. Intel may make changes to specifications and product descriptions at any time, without notice. Designers must not rely on the absence or characteristics of any features or instructions marked "reserved" or "undefined." Intel reserves these for future definition and shall have no responsibility whatsoever for conflicts or incompatibilities arising from future changes to them. The information here is subject to change without notice. Do not finalize a design with this information. The products described in this document may contain design defects or errors known as errata which may cause the product to deviate from published specifications. Current characterized errata are available on request. Contact your local Intel sales office or your distributor to obtain the latest specifications and before placing your product order. -
AI Chips: What They Are and Why They Matter
APRIL 2020 AI Chips: What They Are and Why They Matter An AI Chips Reference AUTHORS Saif M. Khan Alexander Mann Table of Contents Introduction and Summary 3 The Laws of Chip Innovation 7 Transistor Shrinkage: Moore’s Law 7 Efficiency and Speed Improvements 8 Increasing Transistor Density Unlocks Improved Designs for Efficiency and Speed 9 Transistor Design is Reaching Fundamental Size Limits 10 The Slowing of Moore’s Law and the Decline of General-Purpose Chips 10 The Economies of Scale of General-Purpose Chips 10 Costs are Increasing Faster than the Semiconductor Market 11 The Semiconductor Industry’s Growth Rate is Unlikely to Increase 14 Chip Improvements as Moore’s Law Slows 15 Transistor Improvements Continue, but are Slowing 16 Improved Transistor Density Enables Specialization 18 The AI Chip Zoo 19 AI Chip Types 20 AI Chip Benchmarks 22 The Value of State-of-the-Art AI Chips 23 The Efficiency of State-of-the-Art AI Chips Translates into Cost-Effectiveness 23 Compute-Intensive AI Algorithms are Bottlenecked by Chip Costs and Speed 26 U.S. and Chinese AI Chips and Implications for National Competitiveness 27 Appendix A: Basics of Semiconductors and Chips 31 Appendix B: How AI Chips Work 33 Parallel Computing 33 Low-Precision Computing 34 Memory Optimization 35 Domain-Specific Languages 36 Appendix C: AI Chip Benchmarking Studies 37 Appendix D: Chip Economics Model 39 Chip Transistor Density, Design Costs, and Energy Costs 40 Foundry, Assembly, Test and Packaging Costs 41 Acknowledgments 44 Center for Security and Emerging Technology | 2 Introduction and Summary Artificial intelligence will play an important role in national and international security in the years to come. -
3D-AFM Measurements for Semiconductor Structures and Devices
3D-AFM Measurements for Semiconductor Structures and Devices Ndubuisi G. Orji and Ronald G. Dixson Engineering Physics Division Physical Measurement Laboratory National Institute of Standards and Technology Gaithersburg, MD, 20899, USA Abstract This book chapter reviews different types of three-dimensional atomic force microscope (3D-AFM) measurements for semiconductor metrology. It covers different implementations of 3D-AFM, calibrations methods, measurement uncertainty considerations and applications. The goal is to outline key aspects of 3D-AFM for dimensional semiconductor measurements in a way that is accessible to both new and experienced users and gives readers a strong foundation for further study. Preprint version For published version see: N. G. Orji & R. G. Dixson “3D-AFM Measurements for Semiconductor Structures and Devices” In Metrology and Diagnostic Techniques for Nanoelectronics (eds. Z. Ma, & D. G. Seiler) (Pan Stanford, 2017). Official contributions of the U.S. Government, not subject to copyright. Certain commercial equipment, instruments, materials or companies are identified in this paper in order to specify the experimental procedure adequately, or to give full credit to sources of some material. Such identification is not intended to imply recommendation or endorsement by the National Institute of Standards and Technology, nor is it intended to imply that the materials or equipment identified are necessarily the best available for the purpose. 3D-AFM Measurements for Semiconductor Structures and Devices Table of