Standard Cell Library Design and Optimization Methodology for ASAP7
Total Page:16
File Type:pdf, Size:1020Kb
Load more
Recommended publications
-
Section 3. ASIC Industry Trends
3 ASIC INDUSTRY TRENDS ASSPs AND ASICs The term ASIC (Application Specific IC) has been a misnomer from the very beginning. ASICs, as now known in the IC industry, are really customer specific ICs. In other words, the gate array or standard cell device is specifically made for one customer. ASIC, if taken literally, would mean the device was created for one particular type of system (e.g., a disk-drive), even if this device is sold to numerous customers and/or is put in the IC manufacturer’s catalog. Currently, a device type that is sold to more than one user, even if it is produced using ASIC tech- nology, is considered a standard IC or ASSP (Application Specific Standard Product). Thus, we are left with the following nomenclature guidelines (Figure 3-1). ASIC: A device produced for only one customer. PLDs are included as ASICs because the customer “programs” that device for its needs only. CSIC: What ASICs should have been called from the beginning. Some companies differentiate an ASIC from a CSIC by who completes or is responsible for the majority of the IC design effort. If it is the IC producer, the part is labeled a CSIC, if it is the end-user, the device is called an ASIC. This term is not currently used very often in the IC industry. ASSP: A relatively new term for ICs targeting specific types of systems. In many cases the IC will be manufactured using ASIC technology (e.g., gate or linear array or standard cell techniques) but will ultimately be sold as a standard device type to numerous users (i.e., put into a product catolog). -
UCLA Electronic Theses and Dissertations
UCLA UCLA Electronic Theses and Dissertations Title Implications of Modern Semiconductor Technologies on Gate Sizing Permalink https://escholarship.org/uc/item/56s9b2tm Author Lee, John Publication Date 2012 Peer reviewed|Thesis/dissertation eScholarship.org Powered by the California Digital Library University of California University of California Los Angeles Implications of Modern Semiconductor Technologies on Gate Sizing A dissertation submitted in partial satisfaction of the requirements for the degree Doctor of Philosophy in Electrical Engineering by John Hyung Lee 2012 c Copyright by John Hyung Lee 2012 Abstract of the Dissertation Implications of Modern Semiconductor Technologies on Gate Sizing by John Hyung Lee Doctor of Philosophy in Electrical Engineering University of California, Los Angeles, 2012 Professor Puneet Gupta, Chair Gate sizing is one of the most flexible and powerful methods available for the timing and power optimization of digital circuits. As such, it has been a very well-studied topic over the past few decades. However, developments in modern semiconductor technologies have changed the context in which gate sizing is performed. The focus has shifted from custom design methods to standard cell based designs, which has been an enabler in the design of modern, large-scale designs. We start by providing benchmarking efforts to show where the state-of-the-art is in standard cell based gate sizing. Next, we develop a framework to assess the impact of the limited precision and range available in the standard cell library on the power-delay tradeoffs. In addition, shrinking dimensions and decreased manufacturing process control has led to variations in the performance and power of the resulting designs. -
Transistors and Logic Gates
Introduction to Computer Engineering CS/ECE 252, Spring 2013 Prof. Mark D. Hill Computer Sciences Department University of Wisconsin – Madison Chapter 3 Digital Logic Structures Slides based on set prepared by Gregory T. Byrd, North Carolina State University Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Transistor: Building Block of Computers Microprocessors contain millions of transistors • Intel Pentium II: 7 million • Compaq Alpha 21264: 15 million • Intel Pentium III: 28 million Logically, each transistor acts as a switch Combined to implement logic functions • AND, OR, NOT Combined to build higher-level structures • Adder, multiplexer, decoder, register, … Combined to build processor • LC-3 3-3 Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Simple Switch Circuit Switch open: • No current through circuit • Light is off • Vout is +2.9V Switch closed: • Short circuit across switch • Current flows • Light is on • Vout is 0V Switch-based circuits can easily represent two states: on/off, open/closed, voltage/no voltage. 3-4 Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. N-type MOS Transistor MOS = Metal Oxide Semiconductor • two types: N-type and P-type N-type • when Gate has positive voltage, short circuit between #1 and #2 (switch closed) • when Gate has zero voltage, open circuit between #1 and #2 Gate = 1 (switch open) Gate = 0 Terminal #2 must be connected to GND (0V). 3-5 Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. P-type MOS Transistor P-type is complementary to N-type • when Gate has positive voltage, open circuit between #1 and #2 (switch open) • when Gate has zero voltage, short circuit between #1 and #2 (switch closed) Gate = 1 Gate = 0 Terminal #1 must be connected to +2.9V. -
Introduction to ASIC Design
’14EC770 : ASIC DESIGN’ An Introduction Application - Specific Integrated Circuit Dr.K.Kalyani AP, ECE, TCE. 1 VLSI COMPANIES IN INDIA • Motorola India – IC design center • Texas Instruments – IC design center in Bangalore • VLSI India – ASIC design and FPGA services • VLSI Software – Design of electronic design automation tools • Microchip Technology – Offers VLSI CMOS semiconductor components for embedded systems • Delsoft – Electronic design automation, digital video technology and VLSI design services • Horizon Semiconductors – ASIC, VLSI and IC design training • Bit Mapper – Design, development & training • Calorex Institute of Technology – Courses in VLSI chip design, DSP and Verilog HDL • ControlNet India – VLSI design, network monitoring products and services • E Infochips – ASIC chip design, embedded systems and software development • EDAIndia – Resource on VLSI design centres and tutorials • Cypress Semiconductor – US semiconductor major Cypress has set up a VLSI development center in Bangalore • VDAT 2000 – Info on VLSI design and test workshops 2 VLSI COMPANIES IN INDIA • Sandeepani – VLSI design training courses • Sanyo LSI Technology – Semiconductor design centre of Sanyo Electronics • Semiconductor Complex – Manufacturer of microelectronics equipment like VLSIs & VLSI based systems & sub systems • Sequence Design – Provider of electronic design automation tools • Trident Techlabs – Power systems analysis software and electrical machine design services • VEDA IIT – Offers courses & training in VLSI design & development • Zensonet Technologies – VLSI IC design firm eg3.com – Useful links for the design engineer • Analog Devices India Product Development Center – Designs DSPs in Bangalore • CG-CoreEl Programmable Solutions – Design services in telecommunications, networking and DSP 3 Physical Design, CAD Tools. • SiCore Systems Pvt. Ltd. 161, Greams Road, ... • Silicon Automation Systems (India) Pvt. Ltd. ( SASI) ... • Tata Elxsi Ltd. -
Universal Gate - NAND Digital Electronics 2.2 Intro to NAND & NOR Logic
Universal Gate - NAND Digital Electronics 2.2 Intro to NAND & NOR Logic Universal Gate – NAND This presentation will demonstrate • The basic function of the NAND gate. • How a NAND gate can be used to replace an AND gate, an OR gate, or an INVERTER gate. • How a logic circuit implemented with AOI logic gates can Universal Gate – NAND be re-implemented using only NAND gates. • That using a single gate type, in this case NAND, will reduce the number of integrated circuits (IC) required to implement a logic circuit. Digital Electronics AOI Logic NAND Logic 2 More ICs = More $$ Less ICs = Less $$ NAND Gate NAND Gate as an Inverter Gate X X X (Before Bubble) X Z X Y X Y X Z X Y X Y Z X Z 0 0 1 0 1 Equivalent to Inverter 0 1 1 1 0 1 0 1 1 1 0 3 4 Project Lead The Way, Inc Copyright 2009 1 Universal Gate - NAND Digital Electronics 2.2 Intro to NAND & NOR Logic NAND Gate as an AND Gate NAND Gate as an OR Gate X X Y Y X X Z X Y X Y Y Z X Y X Y X Y Y NAND Gate Inverter Inverters NAND Gate X Y Z X Y Z 0 0 0 0 0 0 0 1 0 0 1 1 Equivalent to AND Gate Equivalent to OR Gate 1 0 0 1 0 1 1 1 1 1 1 1 5 6 NAND Gate Equivalent to AOI Gates Process for NAND Implementation 1. -
Digital IC Listing
BELS Digital IC Report Package BELS Unit PartName Type Location ID # Price Type CMOS 74HC00, Quad 2-Input NAND Gate DIP-14 3 - A 500 0.24 74HCT00, Quad 2-Input NAND Gate DIP-14 3 - A 501 0.36 74HC02, Quad 2 Input NOR DIP-14 3 - A 417 0.24 74HC04, Hex Inverter, buffered DIP-14 3 - A 418 0.24 74HC04, Hex Inverter (buffered) DIP-14 3 - A 511 0.24 74HCT04, Hex Inverter (Open Collector) DIP-14 3 - A 512 0.36 74HC08, Quad 2 Input AND Gate DIP-14 3 - A 408 0.24 74HC10, Triple 3-Input NAND DIP-14 3 - A 419 0.31 74HC32, Quad OR DIP-14 3 - B 409 0.24 74HC32, Quad 2-Input OR Gates DIP-14 3 - B 543 0.24 74HC138, 3-line to 8-line decoder / demultiplexer DIP-16 3 - C 603 1.05 74HCT139, Dual 2-line to 4-line decoders / demultiplexers DIP-16 3 - C 605 0.86 74HC154, 4-16 line decoder/demulitplexer, 0.3 wide DIP - Small none 445 1.49 74HC154W, 4-16 line decoder/demultiplexer, 0.6wide DIP none 446 1.86 74HC190, Synchronous 4-Bit Up/Down Decade and Binary Counters DIP-16 3 - D 637 74HCT240, Octal Buffers and Line Drivers w/ 3-State outputs DIP-20 3 - D 643 1.04 74HC244, Octal Buffers And Line Drivers w/ 3-State outputs DIP-20 3 - D 647 1.43 74HCT245, Octal Bus Transceivers w/ 3-State outputs DIP-20 3 - D 649 1.13 74HCT273, Octal D-Type Flip-Flops w/ Clear DIP-20 3 - D 658 1.35 74HCT373, Octal Transparent D-Type Latches w/ 3-State outputs DIP-20 3 - E 666 1.35 74HCT377, Octal D-Type Flip-Flops w/ Clock Enable DIP-20 3 - E 669 1.50 74HCT573, Octal Transparent D-Type Latches w/ 3-State outputs DIP-20 3 - E 674 0.88 Type CMOS CD4000 Series CD4001, Quad 2-input -
Predictive Aging of Reliability of Two Delay Pufs
Predictive Aging of Reliability of two Delay PUFs Naghmeh Karimi1, Jean-Luc Danger2;3, Florent Lozac'h3, and Sylvain Guilley2;3 1 ECE Department, Rutgers University, Piscataway, NJ, USA 08854 [email protected] 2 LTCI, CNRS, T´el´ecom ParisTech, Universit´eParis-Saclay, 75013 Paris, France [email protected] 3 Secure-IC SAS, 35510 Cesson-S´evign´e,France [email protected] Abstract. To protect integrated circuits against IP piracy, Physically Unclonable Functions (PUFs) are deployed. PUFs provide a specific signature for each integrated circuit. However, environmental variations, (e.g., temperature change), power supply noise and more influential IC aging affect the functionally of PUFs. Thereby, it is important to evaluate aging effects as early as possible, preferentially at design time. In this paper we investigate the effect of aging on the stability of two delay PUFs: arbiter-PUFs and loop-PUFs and analyze the architectural impact of these PUFS on reliability decrease due to aging. We observe that the reliability of the arbiter-PUF gets worse over time, whereas the reliability of the loop-PUF remains constant. We interpret this phenomenon by the asymmetric aging of the arbiter, because one half is active (hence aging fast) while the other is not (hence aging slow). Besides, we notice that the aging of the delay chain in the arbiter-PUF and in the loop-PUF has no impact on their reliability, since these PUFs operate differentially. 1 Introduction With the advancement of VLSI technology, people are increasingly relying on electronic devices and in turn integrated circuits (ICs). -
ICS904/EN2 : Design of Digital Integrated Circuits
ICS904/EN2 : Design of Digital Integrated Circuits L5 : Design automation : The "liberty" file format Yves MATHIEU [email protected] Standard Cell characterization "Liberty" files Give all necessary informations to the synthesis and P&R tools A de-facto standard : "Liberty" files from "Synopsys" company. For each cell : • Logic behavior • Area • Power Consumption • Timing But also, for a whole library : • Characterization conditions (Process, Supply Voltage , Temperature) • Characterization conditions (Max rising time, Max capacitances,...) • Statistical capacitance model for wiring... 3/35 ICS904-EN2-L5 Yves MATHIEU An example library Nangate 45nm Open Cell Library Nangate is company creating characterization tools for standard cell libraries. Library distributed by Si2 (Silicon Integration Initiative) an association of electronic design automation companies. No way to process any true circuit, but usable for research and teaching purposes. Based on the NCSU (North Carolina State University) FreePDK45 process kit. FreePDK45 : An open source fictitious, non manufacturable process. 4/35 ICS904-EN2-L5 Yves MATHIEU Nangate 45nm Open Cell Library Units for measurements /* Units Attributes */ voltage_unit : "1V"; current_unit : "1mA"; pulling_resistance_unit : "1kohm"; capacitive_load_unit (1,ff); All measurements use defined units. 6/35 ICS904-EN2-L5 Yves MATHIEU Nangate 45nm Open Cell Library Characterization conditions /* Operation Conditions */ nom_process : 1.00; nom_temperature : 25.00; nom_voltage : 1.10; voltage_map (VDD,1.10); -
Full-Custom Ics Standard-Cell-Based
Full-Custom ICs Design a chip from scratch. Engineers design some or all of the logic cells, circuits, and the chip layout specifi- cally for a full-custom IC. Custom mask layers are created in order to fabricate a full-custom IC. Advantages: complete flexibility, high degree of optimization in performance and area. Disadvantages: large amount of design effort, expensive. 1 Standard-Cell-Based ICs Use predesigned, pretested and precharacterized logic cells from standard-cell li- brary as building blocks. The chip layout (defining the location of the building blocks and wiring between them) is customized. As in full-custom design, all mask layers need to be customized to fabricate a new chip. Advantages: save design time and money, reduce risk compared to full-custom design. Disadvantages: still incurs high non-recurring-engineering (NRE) cost and long manufacture time. 2 D A B C A B B D C D A A B B Cell A Cell B Cell C Cell D Feedthrough Cell Standard-cell-based IC design. 3 Gate-Array Parts of the chip are pre-fabricated, and other parts are custom fabricated for a particular customer’s circuit. Idential base cells are pre-fabricated in the form of a 2-D array on a gate-array (this partially finished chip is called gate-array template). The wires between the transistors inside the cells and between the cells are custom fabricated for each customer. Custom masks are made for the wiring only. Advantages: cost saving (fabrication cost of a large number of identical template wafers is amortized over different customers), shorter manufacture lead time. -
Static CMOS Circuits
Static CMOS Circuits • Conventional (ratio-less) static CMOS – Covered so far • Ratio-ed logic (depletion load, pseudo nMOS) • Pass transistor logic ECE 261 Krish Chakrabarty 1 Example 1 module mux(input s, d0, d1, output y); assign y = s ? d1 : d0; endmodule 1) Sketch a design using AND, OR, and NOT gates. ECE 261 Krish Chakrabarty 2 1 Example 1 module mux(input s, d0, d1, output y); assign y = s ? d1 : d0; endmodule 1) Sketch a design using AND, OR, and NOT gates. ECE 261 Krish Chakrabarty 3 Example 2 2) Sketch a design using NAND, NOR, and NOT gates. Assume ~S is available. ECE 261 Krish Chakrabarty 4 2 Example 2 2) Sketch a design using NAND, NOR, and NOT gates. Assume ~S is available. ECE 261 Krish Chakrabarty 5 Bubble Pushing • Start with network of AND / OR gates • Convert to NAND / NOR + inverters • Push bubbles around to simplify logic – Remember DeMorgan’s Law ECE 261 Krish Chakrabarty 6 3 Example 3 3) Sketch a design using one compound gate and one NOT gate. Assume ~S is available. ECE 261 Krish Chakrabarty 7 Example 3 3) Sketch a design using one compound gate and one NOT gate. Assume ~S is available. ECE 261 Krish Chakrabarty 8 4 Compound Gates • Logical Effort of compound gates ECE 261 Krish Chakrabarty 9 Example 4 • The multiplexer has a maximum input capacitance of 16 units on each input. It must drive a load of 160 units. Estimate the delay of the NAND and compound gate designs. H = 160 / 16 = 10 B = 1 N = 2 ECE 261 Krish Chakrabarty 10 5 NAND Solution ECE 261 Krish Chakrabarty 11 NAND Solution ECE 261 Krish Chakrabarty 12 6 Compound Solution ECE 261 Krish Chakrabarty 13 Compound Solution ECE 261 Krish Chakrabarty 14 7 Example 5 • Annotate your designs with transistor sizes that achieve this delay. -
A Fine-Grained 3D IC Technology with NP-Dynamic Logic
Received 13 June 2016; revised 24 February 2017; accepted 8 March 2017. Date of publication 20 March 2017; date of current version 7 June 2017. Digital Object Identifier 10.1109/TETC.2017.2684781 NP-Dynamic Skybridge: A Fine-Grained 3D IC Technology with NP-Dynamic Logic JIAJUN SHI, MINGYU LI, MOSTAFIZUR RAHMAN, SANTOSH KHASANVIS, AND CSABA ANDRAS MORITZ J. Shi, M. Li, and C.A. Moritz are with the Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, MA 01003 M. Rahman is with the School of Computing and Engineering, University of Missouri, Kansas City, MO 65211 S. Khasanvis is with BlueRISC Inc., Amherst, MA 01002 CORRESPONDING AUTHOR: J. SHI ([email protected]) ABSTRACT A new 3D IC fabric named NP-Dynamic Skybridge is proposed that provides fine-grained vertical 3D integration for future technology scaling. Relying on a template of vertical nanowires, it expands our prior work to incorporate and utilize both n- and p-type transistors in a novel NP-Dynamic circuit-style compatible with true 3D integration. This enables a wide range of elementary logics leading to more compact circuits, simple clocking schemes for cascading logic stages and low buffer requirement. We detail new design concepts for larger-scale circuits, and evaluate our approach using a 4-bit nanoprocessor implemented in 16 nm technology node. A new pipelining scheme specifically designed for our 3D NP-Dynamic circuits is employed in the nanoprocessor. We compare our approach with 2D CMOS as well as state-of-the-art tran- sistor-level monolithic 3D IC (T-MI) approach. Benchmarking results for the 4-bit nanoprocessor show bene- fits of up to 56.7x density, 3.8x power and 1.7x throughput over 2D CMOS. -
Design a 3-Input CMOS NAND Gate (PUN/PDN) with Fan-Out of 3. Total Output Load of the NAND Gate Is Equal to 15Ff and Μn/Μp = 2.5
Tutorial on Transistor Sizing Problem #1 (Static CMOS logic): Design a 3-input CMOS NAND gate (PUN/PDN) with fan-out of 3. Total output load of the NAND gate is equal to 15fF and µn/µp = 2.5. For 0.35µm process technology tox = -9 -12 7.6*10 m, εox = 35*10 F/m. Compare the above design with that of a 3-input NOR (PUN/PDN) gate. State any benefits of one implementation over the other. For the sake of simplicity assume all capacitance is lumped and gate capacitance neglecting diffusion and wiring capacitance. Solution: Cox = εoxWL/ tox = 15fF. So W = 9.2µm. Leff = 0.35µm. Assuming output load is all gate capacitance. This is a simplifying assumption made for this problem. A more realistic approach would be to calculate the diffusion and wiring capacitances as well. Equivalent inverter for fan-out of 3 and µn/µp = 2.5 would result in: A B C 2.23 2.23 2.23 Wp = 2.5*Wn for equal rise and fall times. Also, Wp + Wn = 9.2/3 = 3.16µm for fan-out of 3. A 2.67 B Solving the above equations we have, 2.67 C 2.67 Wp = 2.23µm and Wn = 0.89µm. NAND implementation: NAND implementation Therefore, for the 3-ip NAND gate implementation, each PDN n-MOS transistor will be: 3*0.89µm = 2.67µm A and each p-MOS transistor in the PUN network will be: 2.23µm 6.69 B NOR implementation: 6.69 For a 3-ip NOR gate implementation, each PDN n-MOS transistor C will be: 0.89µm 6.69 A BC Each PUN p-MOS transistor will be 3*2.23µm = 6.69µm 0.89 0.89 0.89 Area comparison: NOR implementation Total gate area of NAND gate is: 3*(2.67+2.23)µm = 14.7µm Total gate area of NOR gate is: 3*(6.69+0.89) µm = 22.7µm Thus we infer that the NAND gate has less area and power compared to the NOR gate for identical loading and fan-out conditions and is the preferred implementation.