Chapter 6 - Combinational Logic Systems GCSE Electronics – Component 1: Discovering Electronics
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Chapter 3: Combinational Logic Design
Chapter 3: Combinational Logic Design 1 Introduction • We have learned all the prerequisite material: – Truth tables and Boolean expressions describe functions – Expressions can be converted into hardware circuits – Boolean algebra and K-maps help simplify expressions and circuits • Now, let us put all of these foundations to good use, to analyze and design some larger circuits 2 Introduction • Logic circuits for digital systems may be – Combinational – Sequential • A combinational circuit consists of logic gates whose outputs at any time are determined by the current input values, i.e., it has no memory elements • A sequential circuit consists of logic gates whose outputs at any time are determined by the current input values as well as the past input values, i.e., it has memory elements 3 Introduction • Each input and output variable is a binary variable • 2^n possible binary input combinations • One possible binary value at the output for each input combination • A truth table or m Boolean functions can be used to specify input-output relation 4 Design Hierarchy • A single very large-scale integrated (VLSI) processos circuit contains several tens of millions of gates! • Imagine interconnecting these gates to form the processor • No complex circuit can be designed simply by interconnecting gates one at a time • Divide and Conquer approach is used to deal with the complexity – Break up the circuit into pieces (blocks) – Define the functions and the interfaces of each block such that the circuit formed by interconnecting the blocks obeys the original circuit specification – If a block is still too large and complex to be designed as a single entity, it can be broken into smaller blocks 5 Divide and Conquer 6 Hierarchical Design due to Divide and Conquer 7 Hierarchical Design • A hierarchy reduce the complexity required to represent the schematic diagram of a circuit • In any hierarchy, the leaves consist of predefined blocks, some of which may be primitives. -
Transistors and Logic Gates
Introduction to Computer Engineering CS/ECE 252, Spring 2013 Prof. Mark D. Hill Computer Sciences Department University of Wisconsin – Madison Chapter 3 Digital Logic Structures Slides based on set prepared by Gregory T. Byrd, North Carolina State University Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Transistor: Building Block of Computers Microprocessors contain millions of transistors • Intel Pentium II: 7 million • Compaq Alpha 21264: 15 million • Intel Pentium III: 28 million Logically, each transistor acts as a switch Combined to implement logic functions • AND, OR, NOT Combined to build higher-level structures • Adder, multiplexer, decoder, register, … Combined to build processor • LC-3 3-3 Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. Simple Switch Circuit Switch open: • No current through circuit • Light is off • Vout is +2.9V Switch closed: • Short circuit across switch • Current flows • Light is on • Vout is 0V Switch-based circuits can easily represent two states: on/off, open/closed, voltage/no voltage. 3-4 Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. N-type MOS Transistor MOS = Metal Oxide Semiconductor • two types: N-type and P-type N-type • when Gate has positive voltage, short circuit between #1 and #2 (switch closed) • when Gate has zero voltage, open circuit between #1 and #2 Gate = 1 (switch open) Gate = 0 Terminal #2 must be connected to GND (0V). 3-5 Copyright © The McGraw-Hill Companies, Inc. Permission required for reproduction or display. P-type MOS Transistor P-type is complementary to N-type • when Gate has positive voltage, open circuit between #1 and #2 (switch open) • when Gate has zero voltage, short circuit between #1 and #2 (switch closed) Gate = 1 Gate = 0 Terminal #1 must be connected to +2.9V. -
Combinational Logic; Hierarchical Design and Analysis
Combinational Logic; Hierarchical Design and Analysis Tom Kelliher, CS 240 Feb. 10, 2012 1 Administrivia Announcements Collect assignment. Assignment Read 3.3. From Last Time IC technology. Outline 1. Combinational logic. 2. Hierarchical design 3. Design analysis. 1 Coming Up Design example. 2 Combinational Logic 1. Definition: Logic circuits in which the output(s) depend solely upon current inputs. 2. No feedback or memory. 3. Sequential circuits: outputs depend upon current inputs and previous inputs. Memory or registers. 4. Example — BCD to 7-segment decoder: S0 D0 S1 D1 BCD - 7 Seg S2 D2 S3 D3 Decoder S4 S5 S6 3 Hierarchical Design 1. Transistor counts: 2 Processor Year Transistor Count TI SN7400 1966 16 Intel 4004 1971 2,300 Intel 8085 1976 6,500 Intel 8088 1979 29,000 Intel 80386 1985 275,000 Intel Pentium 1993 3,100,000 Intel Pentium 4 2000 42,000,000 AMD Athlon 64 2003 105,900,000 Intel Core 2 Duo 2006 291,000,000 Intel Core 2 Quad 2006 582,000,000 NVIDIA G80 2006 681,000,000 Intel Dual Core Itanium 2 2006 1,700,000,000 Intel Atom 2008 42,000,000 Six Core Xeon 7400 2008 1,900,000,000 AMD RV770 2008 956,000,000 NVIDIA GT200 2008 1,400,000,000 Eight Core Xeon Nehalem-EX 2010 2,300,000,000 10 Core Xeon Westmere-EX 2011 2,600,000,000 AMD Cayman 2010 2,640,000,000 NVIDIA GF100 2010 3,000,000,000 Altera Stratix V 2011 3,800,000,000 2. Design and conquer: CPU ⇒ Integer Unit ⇒ Adder ⇒ binary full adder ⇒ NAND gates 3. -
ECE 546 Lecture -20 Power Distribution Networks
ECE 546 Lecture ‐20 Power Distribution Networks Spring 2020 Jose E. Schutt-Aine Electrical & Computer Engineering University of Illinois [email protected] ECE 546 – Jose Schutt‐Aine 1 IC on Package ECE 546 – Jose Schutt‐Aine 2 IC on Package ECE 546 – Jose Schutt‐Aine 3 Power-Supply Noise - Power-supply-level fluctuations - Delta-I noise - Simultaneous switching noise (SSN) - Ground bounce VOH Ideal Actual VOL Vout Vout Time 4 ECE 546 – Jose Schutt‐Aine 4 Voltage Fluctuations • Voltage fluctuations can cause the following Reduction in voltage across power supply terminals. May prevent devices from switching Increase in voltage across power supply terminalsreliability problems Leakage of the voltage fluctuation into transistors Timing errors, power supply noise, delta‐I noise, simultaneous switching noise (SSN) ECE 546 – Jose Schutt‐Aine 5 Power-Supply-Level Fluctuations • Total capacitive load associated with an IC increases as minimum feature size shrinks • Average current needed to charge capacitance increases • Rate of change of current (dI/dt) also increases • Total chip current may change by large amounts within short periods of time • Fluctuation at the power supply level due to self inductance in distribution lines ECE 546 – Jose Schutt‐Aine 6 Reducing Power-Supply-Level Fluctuations Minimize dI/dt noise • Decoupling capacitors • Multiple power & ground pins • Taylored driver turn-on characteristics Decoupling capacitors • Large capacitor charges up during steady state • Assumes role of power supply during current switching • Leads -
Introduction to ASIC Design
’14EC770 : ASIC DESIGN’ An Introduction Application - Specific Integrated Circuit Dr.K.Kalyani AP, ECE, TCE. 1 VLSI COMPANIES IN INDIA • Motorola India – IC design center • Texas Instruments – IC design center in Bangalore • VLSI India – ASIC design and FPGA services • VLSI Software – Design of electronic design automation tools • Microchip Technology – Offers VLSI CMOS semiconductor components for embedded systems • Delsoft – Electronic design automation, digital video technology and VLSI design services • Horizon Semiconductors – ASIC, VLSI and IC design training • Bit Mapper – Design, development & training • Calorex Institute of Technology – Courses in VLSI chip design, DSP and Verilog HDL • ControlNet India – VLSI design, network monitoring products and services • E Infochips – ASIC chip design, embedded systems and software development • EDAIndia – Resource on VLSI design centres and tutorials • Cypress Semiconductor – US semiconductor major Cypress has set up a VLSI development center in Bangalore • VDAT 2000 – Info on VLSI design and test workshops 2 VLSI COMPANIES IN INDIA • Sandeepani – VLSI design training courses • Sanyo LSI Technology – Semiconductor design centre of Sanyo Electronics • Semiconductor Complex – Manufacturer of microelectronics equipment like VLSIs & VLSI based systems & sub systems • Sequence Design – Provider of electronic design automation tools • Trident Techlabs – Power systems analysis software and electrical machine design services • VEDA IIT – Offers courses & training in VLSI design & development • Zensonet Technologies – VLSI IC design firm eg3.com – Useful links for the design engineer • Analog Devices India Product Development Center – Designs DSPs in Bangalore • CG-CoreEl Programmable Solutions – Design services in telecommunications, networking and DSP 3 Physical Design, CAD Tools. • SiCore Systems Pvt. Ltd. 161, Greams Road, ... • Silicon Automation Systems (India) Pvt. Ltd. ( SASI) ... • Tata Elxsi Ltd. -
Universal Gate - NAND Digital Electronics 2.2 Intro to NAND & NOR Logic
Universal Gate - NAND Digital Electronics 2.2 Intro to NAND & NOR Logic Universal Gate – NAND This presentation will demonstrate • The basic function of the NAND gate. • How a NAND gate can be used to replace an AND gate, an OR gate, or an INVERTER gate. • How a logic circuit implemented with AOI logic gates can Universal Gate – NAND be re-implemented using only NAND gates. • That using a single gate type, in this case NAND, will reduce the number of integrated circuits (IC) required to implement a logic circuit. Digital Electronics AOI Logic NAND Logic 2 More ICs = More $$ Less ICs = Less $$ NAND Gate NAND Gate as an Inverter Gate X X X (Before Bubble) X Z X Y X Y X Z X Y X Y Z X Z 0 0 1 0 1 Equivalent to Inverter 0 1 1 1 0 1 0 1 1 1 0 3 4 Project Lead The Way, Inc Copyright 2009 1 Universal Gate - NAND Digital Electronics 2.2 Intro to NAND & NOR Logic NAND Gate as an AND Gate NAND Gate as an OR Gate X X Y Y X X Z X Y X Y Y Z X Y X Y X Y Y NAND Gate Inverter Inverters NAND Gate X Y Z X Y Z 0 0 0 0 0 0 0 1 0 0 1 1 Equivalent to AND Gate Equivalent to OR Gate 1 0 0 1 0 1 1 1 1 1 1 1 5 6 NAND Gate Equivalent to AOI Gates Process for NAND Implementation 1. -
Stuck-At Fault As a Logic Fault
Stuck-At Fault: Stuck-At Fault A Fault Model for the next Millennium? “I tell you, I get no respect!” -Rodney Dangerfield, Comedian Janak H. Patel Department of Electrical and Computer Engineering University of Illinois at Urbana-Champaign “The news of my death are highly exaggerated” -Mark Twain, Author © 2005 Janak H. Patel 2 Stuck-At Fault a Defect Model? Stuck-At Fault as a Logic Fault You can call it - z Stuck-at Fault is a Functional Fault on a Boolean Abstract (Logic) Function Implementation Logical z It is not a Physical Defect Model Boolean Stuck-at 1 does not mean line is shorted to VDD Functional Stuck-at 0 does not mean line is grounded! Symbolic z It is an abstract fault model or Behavioral …... Fault Model A logic stuck-at 1 means when the line is applied a logic 0, it produces a logical error But don’t call it a Defect Model! A logic error means 0 becomes 1 or vice versa 3 4 Propagate Error To Fault Excitation Primary Output Y 1 1 G ERROR A G s - a - 0 A 0 1 x X 1/0 D 1 D F ERROR F 0 Y 0 C 1/0 C Y 0 0 0 E E B H B H Test Vector A,B,C = 1,0,0 detects fault G s-a-0 Activates the fault s-a-0 on line G by applying a logic value 1 in line G 5 6 Unmodeled Defect Detection Defect Sites z Internal to a Logic Gate or Cell Other Logic Transistor Defects – Stuck-On, Stuck-Open, Leakage, Shorts between treminals ERROR Defect G ERROR z External to a Gate or Cell Interconnect Defects – Shorts and Opens D 1 F 0 Y ERROR C 0 0 0 E B H G I 7 8 Defects in Physical Cells Fault Modeling z Physical z Electrical Physical Cells such as NAND, NOR, XNOR, AOI, OAI, MUX2, etc. -
Digital IC Listing
BELS Digital IC Report Package BELS Unit PartName Type Location ID # Price Type CMOS 74HC00, Quad 2-Input NAND Gate DIP-14 3 - A 500 0.24 74HCT00, Quad 2-Input NAND Gate DIP-14 3 - A 501 0.36 74HC02, Quad 2 Input NOR DIP-14 3 - A 417 0.24 74HC04, Hex Inverter, buffered DIP-14 3 - A 418 0.24 74HC04, Hex Inverter (buffered) DIP-14 3 - A 511 0.24 74HCT04, Hex Inverter (Open Collector) DIP-14 3 - A 512 0.36 74HC08, Quad 2 Input AND Gate DIP-14 3 - A 408 0.24 74HC10, Triple 3-Input NAND DIP-14 3 - A 419 0.31 74HC32, Quad OR DIP-14 3 - B 409 0.24 74HC32, Quad 2-Input OR Gates DIP-14 3 - B 543 0.24 74HC138, 3-line to 8-line decoder / demultiplexer DIP-16 3 - C 603 1.05 74HCT139, Dual 2-line to 4-line decoders / demultiplexers DIP-16 3 - C 605 0.86 74HC154, 4-16 line decoder/demulitplexer, 0.3 wide DIP - Small none 445 1.49 74HC154W, 4-16 line decoder/demultiplexer, 0.6wide DIP none 446 1.86 74HC190, Synchronous 4-Bit Up/Down Decade and Binary Counters DIP-16 3 - D 637 74HCT240, Octal Buffers and Line Drivers w/ 3-State outputs DIP-20 3 - D 643 1.04 74HC244, Octal Buffers And Line Drivers w/ 3-State outputs DIP-20 3 - D 647 1.43 74HCT245, Octal Bus Transceivers w/ 3-State outputs DIP-20 3 - D 649 1.13 74HCT273, Octal D-Type Flip-Flops w/ Clear DIP-20 3 - D 658 1.35 74HCT373, Octal Transparent D-Type Latches w/ 3-State outputs DIP-20 3 - E 666 1.35 74HCT377, Octal D-Type Flip-Flops w/ Clock Enable DIP-20 3 - E 669 1.50 74HCT573, Octal Transparent D-Type Latches w/ 3-State outputs DIP-20 3 - E 674 0.88 Type CMOS CD4000 Series CD4001, Quad 2-input -
The Basics of Logic Design
C APPENDIX The Basics of Logic Design C.1 Introduction C-3 I always loved that C.2 Gates, Truth Tables, and Logic word, Boolean. Equations C-4 C.3 Combinational Logic C-9 Claude Shannon C.4 Using a Hardware Description IEEE Spectrum, April 1992 Language (Shannon’s master’s thesis showed that C-20 the algebra invented by George Boole in C.5 Constructing a Basic Arithmetic Logic the 1800s could represent the workings of Unit C-26 electrical switches.) C.6 Faster Addition: Carry Lookahead C-38 C.7 Clocks C-48 AAppendixC-9780123747501.inddppendixC-9780123747501.indd 2 226/07/116/07/11 66:28:28 PPMM C.8 Memory Elements: Flip-Flops, Latches, and Registers C-50 C.9 Memory Elements: SRAMs and DRAMs C-58 C.10 Finite-State Machines C-67 C.11 Timing Methodologies C-72 C.12 Field Programmable Devices C-78 C.13 Concluding Remarks C-79 C.14 Exercises C-80 C.1 Introduction This appendix provides a brief discussion of the basics of logic design. It does not replace a course in logic design, nor will it enable you to design signifi cant working logic systems. If you have little or no exposure to logic design, however, this appendix will provide suffi cient background to understand all the material in this book. In addition, if you are looking to understand some of the motivation behind how computers are implemented, this material will serve as a useful intro- duction. If your curiosity is aroused but not sated by this appendix, the references at the end provide several additional sources of information. -
Combinational Logic
MEC520 디지털 공학 Combinational Logic Jee-Hwan Ryu School of Mechanical Engineering Korea University of Technology and Education Combinational circuits Outputs are determined from the present inputs Consist of input/output variables and logic gates Binary signal to registers Binary signal from registers Sequential Circuits Outputs are determined from the present inputs and the state of the storage elements The state of the storage elements is a function of previous inputs Depends on present and past inputs Korea University of Technology and Education Analysis procedure To determine the function from a given circuit diagram Analysis procedure Make sure the circuit is combinational or sequential No Feedback and memory elements Obtain the output Boolean functions or the truth table Korea University of Technology and Education Obtain Procedure-Boolean Function Boolean function from a logic diagram Label all gate outputs with arbitrary symbols Make output functions at each level Substitute final outputs to input variables Korea University of Technology and Education Obtain Procedure-Truth Table Truth table from a logic diagram Put the input variables to binary numbers Determine the output value at each gate Obtain truth table Korea University of Technology and Education Example Korea University of Technology and Education Design Procedure Procedure to design a combinational circuit 1. Determine the required number of input and output from specification 2. Assign a symbol to each input/output 3. Derive the truth table from the -
Static CMOS Circuits
Static CMOS Circuits • Conventional (ratio-less) static CMOS – Covered so far • Ratio-ed logic (depletion load, pseudo nMOS) • Pass transistor logic ECE 261 Krish Chakrabarty 1 Example 1 module mux(input s, d0, d1, output y); assign y = s ? d1 : d0; endmodule 1) Sketch a design using AND, OR, and NOT gates. ECE 261 Krish Chakrabarty 2 1 Example 1 module mux(input s, d0, d1, output y); assign y = s ? d1 : d0; endmodule 1) Sketch a design using AND, OR, and NOT gates. ECE 261 Krish Chakrabarty 3 Example 2 2) Sketch a design using NAND, NOR, and NOT gates. Assume ~S is available. ECE 261 Krish Chakrabarty 4 2 Example 2 2) Sketch a design using NAND, NOR, and NOT gates. Assume ~S is available. ECE 261 Krish Chakrabarty 5 Bubble Pushing • Start with network of AND / OR gates • Convert to NAND / NOR + inverters • Push bubbles around to simplify logic – Remember DeMorgan’s Law ECE 261 Krish Chakrabarty 6 3 Example 3 3) Sketch a design using one compound gate and one NOT gate. Assume ~S is available. ECE 261 Krish Chakrabarty 7 Example 3 3) Sketch a design using one compound gate and one NOT gate. Assume ~S is available. ECE 261 Krish Chakrabarty 8 4 Compound Gates • Logical Effort of compound gates ECE 261 Krish Chakrabarty 9 Example 4 • The multiplexer has a maximum input capacitance of 16 units on each input. It must drive a load of 160 units. Estimate the delay of the NAND and compound gate designs. H = 160 / 16 = 10 B = 1 N = 2 ECE 261 Krish Chakrabarty 10 5 NAND Solution ECE 261 Krish Chakrabarty 11 NAND Solution ECE 261 Krish Chakrabarty 12 6 Compound Solution ECE 261 Krish Chakrabarty 13 Compound Solution ECE 261 Krish Chakrabarty 14 7 Example 5 • Annotate your designs with transistor sizes that achieve this delay. -
A Study on High-Frequency Performance in Mosfets Scaling
Doctorial Thesis A Study on High-Frequency Performance in MOSFETs Scaling Hiroshi Shimomura March, 2011 Supervisor: Prof. Hiroshi Iwai A Study on High-Frequency Performance in MOSFETs Scaling Contents Contents Ⅰ List of Figures Ⅵ List of Tables ⅩⅤ Chapter.1 Introduction – Background and Motivation of This Study 1.1 Field Effect Transistor Technology 2 1.2 Performance Trends of RF Transistors 5 1.3 Objective and Organization of This Study 11 References 15 Chapter.2 RF Measurement and Characterization 2.1 Introduction 31 2.2 AC S-parameter Measurements 2.2.1 De-embedding Techniques using The OPEN 31 and The SHORT Dummy Device I A Study on High-Frequency Performance in MOSFETs Scaling 2.2.2 Cutoff Frequency, fT 35 2.2.3 Maximum Oscillation Frequency, fmax 36 2.3 Noise Characterization 2.3.1 Noise De-embedding Procedure 39 2.3.2 Noise Parameter Extraction Theory 44 2.4 Large-Signal Measurements 49 2.5 Distortion 50 References 52 Chapter.3 A Mesh-Arrayed MOSFET (MA-MOS) for High-Frequency Analog Applications 3.1 Introduction 55 3.2 Device Configuration and Parasitic Components 55 3.3 AC Characteristics 62 3.4 Conclusion 65 References 66 II A Study on High-Frequency Performance in MOSFETs Scaling Chapter.4 Analysis of RF Characteristics as Scaling MOSFETs from 150 nm to 65 nm Nodes 4.1 Introduction 69 4.2 Methodology and Experimental Procedures 70 4.3 Small Signal and Noise Characteristics 4.3.1 Cut-off frequency :fT and Maximum Oscillation Frequency: fmax 74 4.3.2 Noise Figure: NFmin 79 4.3.3 Intrinsic Gain: gm/gds 84 4.4 Large Signal and Distortion Characteristics 4.4.1 Power-Added Efficiency: PAE and Associated Gain: Ga 86 4.4.2 1dB Compression Point: P1dB 89 4.4.3 Third Order Intercept Point: IP3 91 4.5 Conclusion 95 References 97 Chapter.5 Effect of High Frequency Noise Current Sources on Noise Figure for Sub-50 nm node MOSFETs 5.1 Introduction 103 III A Study on High-Frequency Performance in MOSFETs Scaling 5.2 Noise Theory 5.2.1.