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Borosilicate Glass Wafers Are an Inexpensive Alternative Basics of Microstructuring 01 Chapter MicroChemicals® – Fundamentals of Microstructuring www.microchemicals.com/downloads/application_notes.html PRODUCTION AND SPECIFICATIONS OF GLASS WAFERS For applications where neither the high dielectric strength of quartz nor the high transparency is in the ultravi- olet, visible or infrared spectral range or the thermal stability of quartz or quartz glass is required, borosilicate glass wafers are an inexpensive alternative. Borosilicate Glass and Ordinary Glass in Comparison Composition Borosilicate glass consists of approximately 80% of silicon dioxide (SiO2) and approximately 5-15% boron trioxide (B2O3). Other additives are alkaline oxide (Na2O, K2O), aluminium oxide (Al2O3) and alkaline po- tassium oxide (CaO, MgO). Borosilicate glasses typically have a very low iron content, which causes the typical green colour of window glass in order to increase the transparency. Properties Due to its boron content, borosilicate glass exhibit a higher chemical stability against water, many chemi- cals and pharmaceutical products compared to window glass. In addition, borosilicate glass exhibits signifi cantly higher thermal stability against temperature fl uctua- tions due to its thermal expansion coeffi cients, which are less than half as large as compared to window glass. Production of Glass Wafers For the further processing into glass wafers, specifi c borosilicate glass is produced using the “fl oat pro- cess” (Fig. 37). Hereby the molten glass on melted tin forms a fl oating both-side smooth ribbon with a homogeneous thickness. On its way on the tin bath, the temperature is gradually reduced from 1100 down to 600°C until the sheet can be lifted onto rollers. Glass pane Glass melt Tin melt Fig. 37: The production of glass panes in the "fl oat process" technique After further cooling down the glass gradually to room temperature, so that it anneals without strain, the sheets are cut into the desired dimensions. Glass Wafer Specifi cations Diameter and Dimensions Available diameters are 2, 3, 4, 5, 6 and 8 inch, other diameters as well as rectangular wafer pieces on request. Wafer Thicknesses and Surface Standard thickness are 500, 700 and 1100 µm. Other thickness on request. The surfaces can be one or double-side polished. The roughness of the polished side(s) is usually at < 1.5 nm. www.MicroChemicals.com [email protected] Basics of Microstructuring 01 Chapter MicroChemicals® – Fundamentals of Microstructuring www.microchemicals.com/downloads/application_notes.html Material Properties of Quartz, Fused Silica and Borosilicate Glass Quartz Fused silica Borosilicate glass Composition SiO2 (100 %) SiO2 (100 %) SiO2 (approx. 80 %), B2O3 Density (g/cm3) 2.65 2.2 2.2 Mohs hardness 7 5.3 - 6.5 6.5 Melting point (quartz) or maximum working 1670 / 1713* 1400 400 - 500 temperature (°C) Refractive index (600 nm) 1.54 1.46 1.47 Spectral transmission range (µm) 0.15 - 4 0.17 - 3** 0.35 - 2 Thermal expansion coeffi cient (10-6/ K) 8 - 13*** 0.54 3 Heat conductivity (W/mK) 6 - 12**** 1.38 1.2 Dielectric strength (kV/mm) > 1000 40 30 Table 2: Several Material Properties of Quartz, Fused Silica and Borosilicate Glass * At these temperatures, quartz has already transformed in (1670°C) tridymite or cristobalite (1713°C) ** Transmission range for JGS1, JGS2 and JGS3 material *** Anisotropic, depending on the direction of crystal *** Anisotropic, depending on the direction of crystal www.MicroChemicals.com [email protected] Our Photoresists: Application Areas and Compatibilities Recommended Re- y 1 Resist Film 3 l Recommended Applications Resist Family Photoresists 2 Recommended Developers 4 Thickness movers can s AZ® 1505 ≈ 0.5 µm e- ® ® AZ 1512 HS ≈ 1.0 - 1.5 µm ® ® ® ® AZ 1500 ® AZ 351B, AZ 326 MIF, AZ 726 MIF, AZ Developer AZ 1514 H ≈ 1.2 - 2.0 µm ent is r ® e resist m AZ 1518 ≈ 1.5 - 2.5 µm m ® op ® AZ 4533 ≈ 3 - 5 µm ® ® ® ® l Improved adhesion for wet etching, no AZ 4500 ® AZ 400K, AZ 326 MIF, AZ 726 MIF, AZ 826 MIF processed. AZ 4562 ≈ 5 - 10 µm focus on steep resist sidewalls ® nd AZ P4110 ≈ 1 - 2 µm a ® ® AZ P4330 ≈ 3 - 5 µm ® ® ® ® AZ P4000 ® AZ 400K, AZ 326 MIF, AZ 726 MIF, AZ 826 MIF e AZ P4620 ≈ 6 - 20 µm ® ® AZ 100 Remover, d conditions. So iv r t AZ P4903 ≈ 10 - 30 µm ® ® ® ® ® ® ® ® TechniStrip P1316 AZ PL 177 AZ PL 177 ≈ 3 - 8 µm AZ 351B, AZ 400K, AZ 326 MIF, AZ 726 MIF, AZ 826 MIF ® ® ® ® ® ® TechniStrip P1331 Posi Spray coating AZ 4999 ≈ 1 - 15 µm AZ 400K, AZ 326 MIF, AZ 726 MIF, AZ 826 MIF Dip coating MC Dip Coating Resist ≈ 2 - 15 µm AZ® 351B, AZ® 400K, AZ® 326 MIF, AZ® 726 MIF, AZ® 826 MIF can be achieved ble if metal ion free deve der standa ® s a AZ ECI 3007 ≈ 0.7 µm n ® ® ® ® ® ® n o film AZ ECI 3000 AZ ECI 3012 ≈ 1.0 - 1.5 µm AZ 351B, AZ 326 MIF, AZ 726 MIF, AZ Developer Steep resist sidewalls, high resolution ever, the special properties of each resist fami nt u ® st e and aspect ratio for e. g. dry etching or AZ ECI 3027 ≈ 2 - 4 µm i ® How pm plating AZ 9245 ≈ 3 - 6 µm i AZ® 9200 AZ® 400K, AZ® 326 MIF, AZ® 726 MIF AZ® 9260 ≈ 5 - 20 µm ker res equ c ® Elevated thermal softening point and ® AZ 701 MiR (14 cPs) ≈ 0.8 µm ® ® ® ® AZ 701 MiR ® AZ 351B, AZ 326 MIF, AZ 726 MIF, AZ Developer high resolution for e. g. dry etching AZ 701 MiR (29 cPs) ≈ 2 - 3 µm ard d ® . AZ 12 XT-20PL-05 ≈ 3 - 5 µm ) ® e . Steep resist sidewalls, high resolution ® AZ 12 XT-20PL-10 ≈ 6 - 10 µm AZ® 100 Remover, iv AZ XT ® fied t ® ® ® ® em AZ 12 XT-20PL-20 ≈ 10 - 30 µm li and aspect ratio for e. g. dry etching or ® AZ 400K, AZ 326 MIF, AZ 726 MIF TechniStrip P1316 AZ 40 XT ≈ 15 - 50 µm ® ost any application. (ch plating TechniStrip P1331 m Posi ® amp AZ IPS 6050 ≈ 20 - 100 µm ® ® AZ 5209 ≈ 1 µm ® e AZ 5200 ® al TechniStrip Micro D2 g Elevated thermal softening point and AZ 5214 ≈ 1 - 2 µm ® ® ® ® processable with stan e- AZ 351B, AZ 326 MIF, AZ 726 MIF TechniStrip P1316 R undercut for lift-off applications TI 35ESX ≈ 3 - 4 µm ® vers Ima TI TechniStrip P1331 ssing and subsrrate materials used, details see section ‘removers’ next page TI xLift-X ≈ 4 - 8 µm ses; with additional effort also thi certain fields of application ® s can be used for al AZ nLOF 2020 ≈ 1.5 - 3 µm ® ® s Negative resist sidewalls in combination AZ nLOF 2000 AZ nLOF 2035 ≈ 3 - 5 µm t ® ® ® ® with no thermal softening for lift-off AZ 326 MIF, AZ 726 MIF, AZ 826 MIF ® ) AZ nLOF 2070 ≈ 6 - 15 µm TechniStrip NI555 application ® evelopers are significantly more expensive, and reas ® ® TechniStrip NF52 lm thickne ing e AZ nLOF 5500 AZ nLOF 5510 ≈ 0.7 - 1.5 µm ® k iv ® TechniStrip MLO 07 in l AZ 15 nXT (115 cPs) ≈ 2 - 3 µm kness achievable and - ® ® ® c gat ® AZ 326 MIF, AZ 726 MIF, AZ 826 MIF ds on the resist proce e AZ 15 nXT (450 cPs) ≈ 5 - 20 µm n N Improved adhesion, steep resist side- ® ® lm thi i TechniStrip P1316 d for lower fi Cross walls and high aspect ratios for e. g. dry AZ nXT ( e ® t f ® ® ® ® etching or plating AZ 125 nXT ≈ 20 - 100 µm AZ 326 MIF, AZ 726 MIF, AZ 826 MIF TechniStrip P1331 s TechniStrip® NF52 ® In general, almost all resis Resi Metal ion free (MIF) d Also depe TechniStrip MLO 07 1 makes them specially suited for 2 be dilut 3 quired. 4 Our Developers: Application Areas and Compatibilities Inorganic Developers (typical demand under standard conditions approx. 20 L developer per L photoresist) AZ® Developer is based on sodium phosphate and –metasilicate, is optimized for minimal aluminum attack and is typically used diluted 1 : 1 in DI water for high contrast or undiluted for high development rates. The dark erosion of this developer is slightly higher compared to other developers. AZ® 351B is based on buffered NaOH and typically used diluted 1 : 4 with water, for thick resists up to 1 : 3 if a lower contrast can be tolerated. AZ® 400K is based on buffered KOH and typically used diluted 1 : 4 with water, for thick resists up to 1 : 3 if a lower contrast can be tolerated. AZ® 303 specifically for the AZ® 111 XFS photoresist based on KOH / NaOH is typically diluted 1 : 3 - 1 : 7 with water, depending on whether a high development rate, or a high contrast is required Metal Ion Free (TMAH-based) Developers (typical demand under standard conditions approx. 5 - 10 L developer concentrate per L photoresist) AZ® 326 MIF is 2.38 % TMAH- (TetraMethylAmmoniumHydroxide) in water. AZ® 726 MIF is 2.38 % TMAH- (TetraMethylAmmoniumHydroxide) in water, with additional surfactants for rapid and uniform wetting of the substrate (e. g. for puddle development) AZ® 826 MIF is 2.38 % TMAH- (TetraMethylAmmoniumHydroxide) in water, with additional surfactants for rapid and uniform wetting of the substrate (e. g. for puddle development) and other additives for the removal of poorly solu- ble resist components (residues with specific resist families), however at the expense of a slightly higher dark erosion. Our Removers: Application Areas and Compatibilities AZ® 100 Remover is an amine solvent mixture and standard remover for AZ ® and TI photoresists. To improve its performance, AZ ® 100 remover can be heated to 60 - 80°C. Because the AZ ® 100 Remover reacts highly alkaline with water, it is suitable for this with respect to sensitive substrate materials such as Cu, Al or ITO only if contamination with water can be ruled out.
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