22FDX® 22nm FD-SOI Technology

Highlights GLOBALFOUNDRIES 22FDX®­ 22nm FD-SOI (Fully-Depleted Silicon-On- • 22nm FD-SOI technology Insulator) process technology platform delivers cost effective performance + Manufactured in state-of-the-art fab for connected and low power embedded applications. in Dresden, Germany; Upcoming 22nm FD-SOI transistor technology delivers FinFET-like performance and second source qualification energy-efficiency, including up to 70% lower power vs. 28nm. The simulta- + Includes ultra-low-power with neous high Ft /high Fmax, high self gain and high current efficiency of 22FDX 0.4V operation enables efficient, ultra low power analog/RF/mmWave designs. + Transistor back-gate biasing for enhanced performance, and lower power and reduced area FD-SOI + World-class Fmax; Unique FET – Fully-Depleted stacking for high-Pout/high-PAE Silicon-On-Insulator mmWave PA and switches; – Planar process Lowest power mmWave LNA similar to bulk Fully Depleted + Bulk-like self-heating effect Ultra-thin Channel for Low Leakage + Superior radiation immunity with >30x/1000x lower SCU/MCU SER Thin Buried Oxide Insulator + Integrated RF and mmWave SoC for 5G architectural innovation and reduced system cost • Low power embedded applications + Automotive (ADAS, IVI) Target Applications and Platform Solutions + IoT, Wearables Automotive 5G, LTE and Mid/low-tier IoT / Wearables mmWave Radar, + Networking and WiFi 802.11ac/ax/ad Apps Processor + 5G: <6GHz and mmWave handset MCU, ADAS solutions, backhaul, base stations Enables new RF architectures Low power operation Full-node scaling benefits High Pout for long-range • + LEO satellite communications 35-50% die shrink down to 0.4V in PPAC vs. 28nm radar @77GHz in single- • 40-50% lower power for RF • 1pA/cell standby • <60% power @ iso-perf. chip auto radar system + mmWave radar Tx/Rx (vs. 28nm) • 80% lower total • ~1.3X perf. @ iso-power for low latency, lower • Comprehensive design ecosystem power (vs. 40nm) • ~70% area power, and lower cost + Leverages bulk digital design flows and existing EDA tools Integrated mmWave PA with High performance (RF) Adaptive body bias GLOBALFOUNDRIES high PSAT via FET stacking LDMOS for integrated PA enables additional PPAC AutoPro™ Service + Fully enabled with foundation IP and and switch & power gains by compensating for Package application-specific complex IP management PVT variability and aging • Complete services and support + Design starter kit, MPWs, prototyping Highest ft/fmax Fully integrated & Roadmap to 12nm FD-SOI Automotive G2/G1 for 5G/mmWave versatile eMRAM for for next-gen designs including eMRAM + Advanced packaging and test storage & compute solutions, including 2.5D/3D products 22FDX® Technology Overview Application-optimized Solutions • Four core device Vt’s (FBB, RBB & eLVT) - Integrated RF and analog with high fT/fMAX Analog, - WiFi & BT combo, LTE transceivers • Two I/O Vt’s @ 1.2V/1.5V/1.8V RF/mmWave - Low power 5G and mmWave technologies • Full set of active and passive devices Ultra Low - Ultra-low static leakage (~1pA/μm) • LDMOS (3.3V/5.0V/6.5V) Leakage - ULL SRAM with <1pA/cell leakage - IoT, Wearables, Smartcard applications • Low power: 0.4V to 0.8V Vnom Ultra Low - Flexible power options as low as 0.4V • Reference flow for back-gate biasing Power - Consumer, mobile, Auto IVI applications • RF BEOL /w ultra thick metal stacks - Fully integrated, versatile memory • Standard temperature range: –40°C to 125°C eMRAM for storage and compute for IoT and MCU (in development) IP Overview Automotive - Grade 1 for under-the-hood automotive/ The 22FDX Platform IP portfolio includes a wide range industrial (in development); Grade 2 of silicon-proven high performance, power-optimized solutions for a broad set of applications. Architected for Effective Back-gate Biasing Technology back-gate biasing feature enables dynamic Foundation IP tradeoffs between power, performance and leakage and Standard Cell Low Power/Performance/Dense/Low Leakage Libraries provides the greatest design flexibility. Memory HP/HD/ULL/TP/DP, SRAM, Register File, ROM Forward Body Bias (FBB) GPIO 1.2-1.8V/3.3V, ESD • 50% lower power at same frequency (vs 28nm) • Up to 40% faster performance at same power (vs 28nm) Body Bias Body Bias Generator, Dynamic Body-bias Controller Reverse Body Bias (RBB) Interface IP • Reduces leakage to 1pA/micron in standby mode DDR3/4 LPDDR3/4 USB2/3.x PCIe SATA MIPI D-PHY/ High Performance and Low Power SERDES M-PHY HDMI 2.0 LVDS XAUI Frequency vs. Total Power Wireless Connectivity IP Non-volatile Memory IP 239 240 50% Faster 195 BLE WiFi NB-IoT Cat-M1 OTP eFuse 210 18% Less Power 28 SLP 13% 180 More Analog IP Core IP 22FDX (no bias) Power 152 173 ADC/ Video Audio 47% Less Power PLL LS RISC-V 125 DAC DAC CODEC 127 14LPP

Temp Process POR/ 92% Less Power RTC Regulator Sensor Monitor BOR 22FDX 0.4v Contact GF for IP availability. 17 Total Power (mW) Total 520 800 Frequency (MHz) 1200 Design and Manufacturing Ecosystem with FDXcelerator™ Partner Program

EDA GLOBALSOLUTIONS is the sum of our internal Libraries Analog / Processor High-speed (Standard Cells, resources and ecosystem partners, combined Memories) Mixed-signal IP Interfaces OSAT IP to efficiently enable the fastest time-to-volume. Full Suite PDK, Reference Flow Customers The FDXcelerator Partner Program facilitates Design 22nm FD-SOI Process Technology ASIC FDX™ SoC design, reduces time to market Services SoC Packaging 2.5D and 3D Packaging System and minimizes development costs. IP

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