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Strained Silicon T Echnology Strained Silicon Technology Tejas Krishnamohan ([email protected]) Prof. Krishna Saraswat ([email protected]) Department of Electrical Engineering Stanford University, Stanford CA 94305 What is strain? - Types of loading Tensile Compressive Shear Torsion For tensile and compressive strain Stress and strain: Positive for tensile loads Negative for compressive loads What is strain? – Hooke’s Law E Elastic strain is reversible Plastic strain is irreversible What is strain? – Poisson’s Ratio Elastic constants Young’s Poisson’s Material Modulus Ratio (GPa) Si [100] 130 0.28 Ge[100] 103 0.26 C 1000 0.1 SiC 748 0.18 GaAs 86 0.31 InAs 51.4 0.35 SiO2 94 Al 64 Typically, Cu 124 High Young’s modulus Low Poisson’s ratio W 406 Strained Silicon - Introduction Transistor scaling: Mobility MOSFET Source Injection Source-Barrier 1000 -0.3 11 E to x =35 Å eff r to x =70 Å 500 ≈ k T/q Electron B ) s 300 - V / 2 200 -0.3 m E c eff ( -2 E eff f f e 100 Hole µ Drive Current & Gate Delay: -1 50 Eeff 1− r 1 µm CMOS 0.1 µm CMOS = − 30 I D /W Cox (VG VT )vT 0.1 0.2 0.3 0.5 1 2 3 1+ r E e f f (MV/cm) L ×V CLOADVDD = gate DD ( − )× Mobility degrades with transistor scaling I D VDD VT vinj - Universal mobility model ν - Ionized impurity scattering Lower transport mass Higher inj , µ Lundstrom, IEEE EDL, June 2001 pp.293 Strained Silicon - Introduction Strain enhanced mobility • Effective mass desired – Small mass in the transport direction (high mobility) – Large mass in the transverse direction (large density of states) • Population of sub-bands is an important consideration – Quantum confinement (high field, ultra-thin channel) may cause carriers to populate sub- bands with different effective mass Biaxial strain – Strain changes band structure and band splitting • Fermi velocity, injection velocity Source: Intel Corp. S. Takagi, “Re-examination of subband structure engineering in ultra-short channel MOSFETs under ballistic carrier transport,” Symp. VLSI Tech., pp. 115 – 116 (2003). Strained Silicon – Biaxial strain Si and SiGe crystal structures Source: J. Hoyt, MIT Strained Silicon – Biaxial strain Effect of biaxial strain on Si energy bands Source: J. Hoyt, MIT . 3 0 0 2 ¤ ¤ ¤ ¤ , § § ¦ ¦ § § ¦ ¦ e ¤ ¤ M ¤ ¤ D § § G § § i E I , ¥¦ ¥¦ ¥¦ ¥¦ S n . § § § § l ¤ ¤ ¤ ¤ i a d ¦ ¦ t ¦ ¦ ¤ ¤ ¤ ¤ ¢£ ¢£ ¢£ ¢£ e e a ¢ ¢ ¢ ¢ % x m ¡ ¡ ¡ ¡ r i a ! l t R $ e # . s K r " l n o a i i S x s d d e e a n e n i o r i a c n i r l i u t ¤ ¤ ¤ ¤ i 2 § § ¦ ¦ ¦ ¦ § § ¦ ¦ ¦ ¦ t S s 0 e a B ¤ ¤ ¤ ¤ ¤ ¤ ¤ ¤ 0 G c r i 2 § § § § t S u m M s – § § § § n r D ¥¦ ¥¦ ¥¦ ¥¦ 0 § § t § § E I ¤ ¤ ¤ ¤ 6 ¦ ¦ ¦ ¦ w , s . l ¦ ¦ ¦ ¦ n ¤ ¤ ¤ ¤ o a ¢£ ¢£ ¢£ ¢£ d £ £ ¢ ¢ £ £ ¢ ¢ © © © © t e r e e n e i o d r o c i ¡ ¡ ¡ ¡ g e ¨ ¨ ¦ ¦ ¨ ¨ ¦ ¦ u 2 x i i e c o B D L S – v i . o S B C l R e y i g D o S l o n d . h 1 2 e c 0 0 0 0 - e 2 2 n t , , + , ( ¤ ¤ ¤ ¤ 9 8 ¦ ¦ ¦ ¦ i ' 5 9 ' g ¤ 1 ¤ ¤ ¤ . - 1 ' 1 a p p n ) ) 3 § § -. § § / 0 , , i . 2 l r h h + , § § § § , ¥¦ ¥¦ c c ¥¦ ¥¦ b ' * t e e ¤ ¤ ¤ ¤ T T ¦ ¦ ¦ ¦ a ( ) I I & ' S S S ' + ¢£ ¢£ ¢£ ¢£ n 1 9 : £ £ £ £ © © © © - L L 4 + V V - 6 E ( + , ¡ ¡ ¡ ¡ . ' ¨ ¨ ¦ 8 ¦ ¨ ¨ ¦ ¦ 5 ) p p ' 5 - 0 m m 2 4 7 ) 4 y y 0 S S , , . l l a a t t e e m m i i R R . K K Strained Silicon – Biaxial strain Strain-dependence of mobility Strain = (aStr.Si-aSi)/aSi (%) 0.0 0.5 1.0 1.5 2.0 2.5 -2 rrrr N = 1e13 cm oooo inv tttt -3 cccc aaaa Chan.Dop.= 2e17 cm FFFF tttt 2.0 nnnn eeee mmmm eeee cccc nnnn aaaa 1.5 hhhh nnnn EEEE yyyy tttt iiii llll iiii bbbb 1.0 oooo MMMM 0 10 20 30 40 50 Equivalent [Ge] in Fully Relaxed SiGe (%) Mobility enhancements consistent with amount of strain even for strained silicon on insulator K. Rim et al., IEDM, 2003. Strained Silicon – Why Uniaxial? Studied extensively but…two key problems 1) Integration difficulties - Dislocations - Ge up-diffusion - Fast diffusion of extensions 2) Poor hole mobility gain - Cost - At high Eeff LH-HH separation is reduced - Hole mobility gain is lost Source: Intel Corp. Strained Silicon – Uniaxial strain Why uniaxial? Piezoresistance calculations Biaxial strain C. S. Smith, Phys. Rev. 1954 High hole mobility at high Eeff - Effective mass reduction (band warping) - Increased band splitting - Band separation is not reduced at high Eeff (high quantization effective mass for light holes) Source: Intel Corp. S. E. Thompson, IEDM Tech. Dig., 2004. Strained Silicon – Uniaxial strain Choosing the right strain orientation Traditional PMOS NMOS C.-H Ge, IEDM December 2003 Strained Silicon – Uniaxial strain Device Technology Traditional Approach Intel’s Technology Processed induced strain Source: Intel Corp. Strained Silicon – Uniaxial strain Stress distribution PMOS stress distribution NMOS stress distribution - SiGe S-D compresses channel - Tensile nitride cap stretches the - Average channel stress along channel the channel (~500MPa) - Two components of stress - SiGe also improves Rext induced by the nitride cap Source: Intel Corp. Strained Silicon – Uniaxial strain Stress scaling PMOS stress increases as NMOS stress increases as SiGe % is increased and as the capping layer thickness channel length decreases is increased Source: Intel Corp. Strained Silicon – Uniaxial strain Transistor performance PMOS NMOS - Drive current of 0.72mA/micron is - Drive current of 1.26mA/micron obtained is obtained - 30% gain from strain enhanced - 10% gain from tensile strain mobility - At 1.2V and 40nA/micron off- - At 1.2V and 40nA/micron off- state leakage state leakage Source: Intel Corp. Strained Silicon – Process induced strain Stressor films and liners Dual stress liner for SOI H. S. Yang et al., IEDM Tech. Dig., 2004. Strained Silicon – Process induced strain Stress scaling in stressor films and liners PMOSFET • Strain/stress increases with shorter gate length • Current drive improvement decreases at short gate lengths – attributed to increased halo doping H. S. Yang et al., IEDM Tech. Dig., 2004. Strained Silicon – Process induced strain Gate induced stress • Built-in stress in FUSI gates, metal gates, and metal oxides. • Implants in the gate create large built-in stress that can be kept depending on annealing process (N2 ~ -150MPa, P ~ - 450MPa, Ge ~ - 500MPa). Gate stress for Extremely Thin-SOI Source: AMD Corp. Strained Silicon – Process induced strain Which is best? Source: Synopsys, AMD Corp..
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