EC312 Lesson 1: Transistors
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Transistor Circuit Guidebook Byron Wels TAB BOOKSBLUE RIDGE SUMMIT, PA
TAB BOOKS No. 470 34.95 By Byron Wels TransistorCircuit GuidebookByronWels TABBLUE RIDGE BOOKS SUMMIT,PA. 17214 Preface beforemeIa supposepioneer (along the my withintransistor firstthe many field.experiencewith wasother Weknown. World were using WarUnlike solid-stateIIsolid-state GIs) today's asdevices somewhat experimen- receivers marks of FIRST EDITION devicester,ownFirst, withsemiconductors! youwith a choice swipedwhichor tank. ofto a sealed,Here'sexperiment, pairThen ofhow encapsulated, you earphones we carefullywe did had it: from totookand construct the veryonenearest exoticof our the THIRDSECONDFIRST PRINTING-SEPTEMBER PRINTING-AUGUST PRINTING-JANUARY 1972 1970 1968 plane,wasyouAnphonesantenna. emptywound strung jeep,apart After toiletfull outand ofclippingas paper wire,unwoundhigh closelyrollandthe servedascatchthe far spaced.wire offas as itfrom a thewouldsafetyThe thecoil remaining-pin,magnetreach-for form, you inside.which stuckwire the Copyright © 1968by TAB BOOKS coatedNext,it into youneeded,a hunkribbons of -ofwooda razor -steel, soblade.the but point Oh,aItblued was noneprojected placedblade of the -quenchat so fancy right the pointplastic-bluedangles.of -, Reproduction or publicationPrinted inof the ofAmerica the United content States in any manner, with- themindfoundphoneground pin you,the was couldserved right not wired contact lacquerspotas toa onground blade, it. theblued.blade'sAconnector, pin,bayonet bluing,and stuck antennaand you hilt thecould coil.-deep other actuallyIfin ear- youthe isoutherein. assumed express -
Chapter 7: AC Transistor Amplifiers
Chapter 7: Transistors, part 2 Chapter 7: AC Transistor Amplifiers The transistor amplifiers that we studied in the last chapter have some serious problems for use in AC signals. Their most serious shortcoming is that there is a “dead region” where small signals do not turn on the transistor. So, if your signal is smaller than 0.6 V, or if it is negative, the transistor does not conduct and the amplifier does not work. Design goals for an AC amplifier Before moving on to making a better AC amplifier, let’s define some useful terms. We define the output range to be the range of possible output voltages. We refer to the maximum and minimum output voltages as the rail voltages and the output swing is the difference between the rail voltages. The input range is the range of input voltages that produce outputs which are not at either rail voltage. Our goal in designing an AC amplifier is to get an input range and output range which is symmetric around zero and ensure that there is not a dead region. To do this we need make sure that the transistor is in conduction for all of our input range. How does this work? We do it by adding an offset voltage to the input to make sure the voltage presented to the transistor’s base with no input signal, the resting or quiescent voltage , is well above ground. In lab 6, the function generator provided the offset, in this chapter we will show how to design an amplifier which provides its own offset. -
Chapter1: Semiconductor Diode
Chapter1: Semiconductor Diode. Electronics I Discussion Eng.Abdo Salah Theoretical Background: • The semiconductor diode is formed by doping P-type impurity in one side and N-type of impurity in another side of the semiconductor crystal forming a p-n junction as shown in the following figure. At the junction initially free charge carriers from both side recombine forming negatively c harged ions in P side of junction(an atom in P -side accept electron and be comes negatively c harged ion) and po sitive ly c harged ion on n side (an atom in n-side accepts hole i.e. donates electron and becomes positively charged ion)region. This region deplete of any type of free charge carrier is called as depletion region. Further recombination of free carrier on both side is prevented because of the depletion voltage generated due to charge carriers kept at distance by depletion (acts as a sort of insulation) layer as shown dotted in the above figure. Working principle: When voltage is not app lied acros s the diode , de pletion region for ms as shown in the above figure. When the voltage is applied be tween the two terminals of the diode (anode and cathode) two possibilities arises depending o n polarity of DC supply. [1] Forward-Bias Condition: When the +Ve terminal of the battery is connected to P-type material & -Ve terminal to N-type terminal as shown in the circuit diagram, the diode is said to be forward biased. The application of forward bias voltage will force electrons in N-type and holes in P -type material to recombine with the ions near boundary and to flow crossing junction. -
Basic DC Motor Circuits
Basic DC Motor Circuits Living with the Lab Gerald Recktenwald Portland State University [email protected] DC Motor Learning Objectives • Explain the role of a snubber diode • Describe how PWM controls DC motor speed • Implement a transistor circuit and Arduino program for PWM control of the DC motor • Use a potentiometer as input to a program that controls fan speed LWTL: DC Motor 2 What is a snubber diode and why should I care? Simplest DC Motor Circuit Connect the motor to a DC power supply Switch open Switch closed +5V +5V I LWTL: DC Motor 4 Current continues after switch is opened Opening the switch does not immediately stop current in the motor windings. +5V – Inductive behavior of the I motor causes current to + continue to flow when the switch is opened suddenly. Charge builds up on what was the negative terminal of the motor. LWTL: DC Motor 5 Reverse current Charge build-up can cause damage +5V Reverse current surge – through the voltage supply I + Arc across the switch and discharge to ground LWTL: DC Motor 6 Motor Model Simple model of a DC motor: ❖ Windings have inductance and resistance ❖ Inductor stores electrical energy in the windings ❖ We need to provide a way to safely dissipate electrical energy when the switch is opened +5V +5V I LWTL: DC Motor 7 Flyback diode or snubber diode Adding a diode in parallel with the motor provides a path for dissipation of stored energy when the switch is opened +5V – The flyback diode allows charge to dissipate + without arcing across the switch, or without flowing back to ground through the +5V voltage supply. -
An Integrated Semiconductor Device Enabling Non-Optical Genome Sequencing
ARTICLE doi:10.1038/nature10242 An integrated semiconductor device enabling non-optical genome sequencing Jonathan M. Rothberg1, Wolfgang Hinz1, Todd M. Rearick1, Jonathan Schultz1, William Mileski1, Mel Davey1, John H. Leamon1, Kim Johnson1, Mark J. Milgrew1, Matthew Edwards1, Jeremy Hoon1, Jan F. Simons1, David Marran1, Jason W. Myers1, John F. Davidson1, Annika Branting1, John R. Nobile1, Bernard P. Puc1, David Light1, Travis A. Clark1, Martin Huber1, Jeffrey T. Branciforte1, Isaac B. Stoner1, Simon E. Cawley1, Michael Lyons1, Yutao Fu1, Nils Homer1, Marina Sedova1, Xin Miao1, Brian Reed1, Jeffrey Sabina1, Erika Feierstein1, Michelle Schorn1, Mohammad Alanjary1, Eileen Dimalanta1, Devin Dressman1, Rachel Kasinskas1, Tanya Sokolsky1, Jacqueline A. Fidanza1, Eugeni Namsaraev1, Kevin J. McKernan1, Alan Williams1, G. Thomas Roth1 & James Bustillo1 The seminal importance of DNA sequencing to the life sciences, biotechnology and medicine has driven the search for more scalable and lower-cost solutions. Here we describe a DNA sequencing technology in which scalable, low-cost semiconductor manufacturing techniques are used to make an integrated circuit able to directly perform non-optical DNA sequencing of genomes. Sequence data are obtained by directly sensing the ions produced by template-directed DNA polymerase synthesis using all-natural nucleotides on this massively parallel semiconductor-sensing device or ion chip. The ion chip contains ion-sensitive, field-effect transistor-based sensors in perfect register with 1.2 million wells, which provide confinement and allow parallel, simultaneous detection of independent sequencing reactions. Use of the most widely used technology for constructing integrated circuits, the complementary metal-oxide semiconductor (CMOS) process, allows for low-cost, large-scale production and scaling of the device to higher densities and larger array sizes. -
Vlsi Design Lecture Notes B.Tech (Iv Year – I Sem) (2018-19)
VLSI DESIGN LECTURE NOTES B.TECH (IV YEAR – I SEM) (2018-19) Prepared by Dr. V.M. Senthilkumar, Professor/ECE & Ms.M.Anusha, AP/ECE Department of Electronics and Communication Engineering MALLA REDDY COLLEGE OF ENGINEERING & TECHNOLOGY (Autonomous Institution – UGC, Govt. of India) Recognized under 2(f) and 12 (B) of UGC ACT 1956 (Affiliated to JNTUH, Hyderabad, Approved by AICTE - Accredited by NBA & NAAC – ‘A’ Grade - ISO 9001:2015 Certified) Maisammaguda, Dhulapally (Post Via. Kompally), Secunderabad – 500100, Telangana State, India Unit -1 IC Technologies, MOS & Bi CMOS Circuits Unit -1 IC Technologies, MOS & Bi CMOS Circuits UNIT-I IC Technologies Introduction Basic Electrical Properties of MOS and BiCMOS Circuits MOS I - V relationships DS DS PMOS MOS transistor Threshold Voltage - VT figure of NMOS merit-ω0 Transconductance-g , g ; CMOS m ds Pass transistor & NMOS Inverter, Various BiCMOS pull ups, CMOS Inverter Technologies analysis and design Bi-CMOS Inverters Unit -1 IC Technologies, MOS & Bi CMOS Circuits INTRODUCTION TO IC TECHNOLOGY The development of electronics endless with invention of vaccum tubes and associated electronic circuits. This activity termed as vaccum tube electronics, afterward the evolution of solid state devices and consequent development of integrated circuits are responsible for the present status of communication, computing and instrumentation. • The first vaccum tube diode was invented by john ambrase Fleming in 1904. • The vaccum triode was invented by lee de forest in 1906. Early developments of the Integrated Circuit (IC) go back to 1949. German engineer Werner Jacobi filed a patent for an IC like semiconductor amplifying device showing five transistors on a common substrate in a 2-stage amplifier arrangement. -
Resistors, Diodes, Transistors, and the Semiconductor Value of a Resistor
Resistors, Diodes, Transistors, and the Semiconductor Value of a Resistor Most resistors look like the following: A Four-Band Resistor As you can see, there are four color-coded bands on the resistor. The value of the resistor is encoded into them. We will follow the procedure below to decode this value. • When determining the value of a resistor, orient it so the gold or silver band is on the right, as shown above. • You can now decode what resistance value the above resistor has by using the table on the following page. • We start on the left with the first band, which is BLUE in this case. So the first digit of the resistor value is 6 as indicated in the table. • Then we move to the next band to the right, which is GREEN in this case. So the second digit of the resistor value is 5 as indicated in the table. • The next band to the right, the third one, is RED. This is the multiplier of the resistor value, which is 100 as indicated in the table. • Finally, the last band on the right is the GOLD band. This is the tolerance of the resistor value, which is 5%. The fourth band always indicates the tolerance of the resistor. • We now put the first digit and the second digit next to each other to create a value. In this case, it’s 65. 6 next to 5 is 65. • Then we multiply that by the multiplier, which is 100. 65 x 100 = 6,500. • And the last band tells us that there is a 5% tolerance on the total of 6500. -
Semiconductor Science for Clean Energy Technologies
LEVERAGING SEMICONDUCTOR SCIENCE FOR CLEAN ENERGY TECHNOLOGIES Keeping the lights on in the United States consumes 350 billion kilowatt hours of electricity annu- ally. Most of that light still comes from incandescent bulbs, which haven’t changed much since Thomas Edison invented them 140 years ago. But now a dramatically more efficient lighting tech- nology is seeing rapid adoption: semiconductor devices known as light-emitting diodes (LEDs) use 85 percent less energy than incandescent bulbs, last 25 times as long, and have the potential to save U.S. consumers a huge portion of the electricity now used for lighting. High-performance solar power plant in Alamosa, Colorado. It generates electricity with multi-layer solar cells, developed by the National Renewable Energy Laboratory, that absorb and utilize more of the sun’s energy. (Dennis Schroeder / National Renewable Energy Laboratory) How we generate electricity is also changing. The costs of to produce an electrical current. The challenge has been solar cells that convert light from the sun into electricity to improve the efficiency with which solar cells convert have come down dramatically over the past decade. As a sunlight to electricity and to reduce their cost for commer- result, solar power installations have grown rapidly, and cial applications. Initially, solar cell production techniques in 2016 accounted for a significant share of all the new borrowed heavily from the semiconductor industry. Silicon electrical generating capacity installed in the U.S. This solar cells are built on wafers cut from ingots of crystal- grid-scale power market is dominated by silicon solar cells, line silicon, just as are the chips that drive computers. -
Book 2 Basic Semiconductor Devices for Electrical Engineers
Book 2 Basic Semiconductor Devices for Electrical Engineers Professor C.R. Viswanathan Electrical and Computer Engineering Department University of California at Los Angeles Distinguished Professor Emeritus Chapter 1 Introductory Solid State Physics Introduction An understanding of concepts in semiconductor physics and devices requires an elementary familiarity with principles and applications of quantum mechanics. Up to the end of nineteenth century all the investigations in physics were conducted using Newton’s Laws of motion and this branch of physics was called classical physics. The physicists at that time held the opinion that all physical phenomena can be explained using classical physics. However, as more and more sophisticated experimental techniques were developed and experiments on atomic size particles were studied, interesting and unexpected results which could not be interpreted using classical physics were observed. Physicists were looking for new physical theories to explain the observed experimental results. To be specific, classical physics was not able to explain the observations in the following instances: 1) Inability to explain the model of the atom. 2) Inability to explain why the light emitted by atoms in an electric discharge tube contains sharp spectral lines characteristic of each element. 3) Inability to provide a theory for the observed properties in thermal radiation i.e., heat energy radiated by a hot body. 4) Inability to explain the experimental results obtained in photoelectric emission of electrons from solids. Early physicists Planck (thermal radiation), Einstein (photoelectric emission), Bohr (model of the atom) and few others made some hypothetical and bold assumptions to make their models predict the experimental results. -
MOSFET Operation Lecture Outline
97.398*, Physical Electronics, Lecture 21 MOSFET Operation Lecture Outline • Last lecture examined the MOSFET structure and required processing steps • Now move on to basic MOSFET operation, some of which may be familiar • First consider drift, the movement of carriers due to an electric field – this is the basic conduction mechanism in the MOSFET • Then review basic regions of operation and charge mechanisms in MOSFET operation 97.398*, Physical Electronics: David J. Walkey Page 2 MOSFET Operation (21) Drift • The movement of charged particles under the influence of an electric field is termed drift • The current density due to conduction by drift can be written in terms of the electron and hole velocities vn and vp (cm/sec) as =+ J qnvnp qpv • This relationship is general in that it merely accounts for particles passing a certain point with a given velocity 97.398*, Physical Electronics: David J. Walkey Page 3 MOSFET Operation (21) Mobility and Velocity Saturation • At low values of electric field E, the carrier velocity is proportional to E -the proportionality constant is the mobility µ • At low fields, the current density can therefore be written Jqn= µ qpµ !nE+!p E v n v p • At high E, scattering limits the velocity to a maximum value and the relationship above no longer holds - this is termed velocity saturation 97.398*, Physical Electronics: David J. Walkey Page 4 MOSFET Operation (21) Factors Influencing Mobility • The value of mobility (velocity per unit electric field) is influenced by several factors – The mechanisms of conduction through the valence and conduction bands are different, and so the mobilities associated with electrons and holes are different. -
IX.3. a Semiconductor Device Primer – Bipolar Transistors LBNL 2
1 IX.3. Bipolar Transistors Consider the npn structure shown below. COLLECTOR n- BASE + +p -IC- + +n- I -B EMITTER The base and emitter form a diode, which is forward biased so that a base current IB flows. The base current injects holes into the base-emitter junction. As in a simple diode, this gives rise to a corresponding electron current through the base-emitter junction. If the potential applied to the collector is sufficiently positive so that the electrons passing from the emitter to the base are driven towards the collector, an external current IC will flow in the collector circuit. The ratio of collector to base current is equal to the ratio of electron to hole currents traversing the base-emitter junction. In an ideal diode IC I nBE Dn / N ALn N D Dn Lp = = = I B I pBE Dp / N D Lp N A Dp Ln Introduction to Radiation Detctors and Electronics, 13-Apr-99 Helmuth Spieler IX.3. A Semiconductor Device Primer – Bipolar Transistors LBNL 2 If the ratio of doping concentrations in the emitter and base regions ND /NA is sufficiently large, the collector current will be greater than the base current. ⇒ DC current gain Furthermore, we expect the collector current to saturate when the collector voltage becomes large enough to capture all of the minority carrier electrons injected into the base. Since the current inside the transistor comprises both electrons and holes, the device is called a bipolar transistor. Dimensions and doping levels of a modern high-frequency transistor (5 – 10 GHz bandwidth) 0 0.5 1.0 1.5 Distance [µm] (adapted from Sze) Introduction to Radiation Detctors and Electronics, 13-Apr-99 Helmuth Spieler IX.3. -
Laboratory Exercise 2 DC Characteristics of Bipolar Junction
DEPARTMENT OF SEMICONDUCTOR AND OPTOELECTRONIC DEVICES Semiconductor Device Laboratory Laboratory Exercise 2 DC characteristics of Bipolar Junction Transistors (BJT) The aim of the exercise The main aim of this laboratory exercise is to understand principles of operation of Bipolar Junction Transistors (BJT). It covers the measurements of static and small signal parameters. Backgrounds Physical structure of the BJT BJT is a semiconductor device having a three-layer structure with three external electrodes, the emitter (E), the base (B), and the collector (C). As shown in Fig. 1, the structure may be p-n-p or n-p-n type. Despite of the transistor type the emitter layer has always more acceptor or donor impurities added than the base or the collector layer. This asymmetry results from different roles the emitter and the collector layers play in the BJT. In normal operation of the BJT (as an amplifier), the base-emitter junction is forward biased and the base-collector junction is reverse biased. Transistor amplification is controlled by changing the current flow through the base-emitter junction. C N C . C P C . P B. N B. B . B . E . N . E P . E E (a) (b) Fig. 1. The n-p-n BJT (a) and the p-n-p BJT (b) along with their symbols There are three operating configurations of the BJT. These are the common-emitter (OE) configuration, the common-base configuration (OB), and the common-collector (OC) configuration. These configurations are shown in Fig. 2. (a) (b) (c) Fig. 2 The n-p-n transistor operating configurations: (a) common-emitter, (b) common-base, (c) common-collector DC characteristics Four types of characteristics can be defined for each of the transistor operating configurations.